Growth equipment and system

Abstract

The utility model provides growth equipment and a system. The growth equipment comprises a shell, an air floatation tray and an isolation structure, an accommodating cavity, a growth gas channel and a rotary gas channel are formed in the shell; the upper end of the accommodating cavity is opened; the communicating part of the rotary gas channel and the accommodating cavity is lower than the end part of the upper end of the accommodating cavity; the rotating gas channel is provided with a rotating gas inlet and a rotating gas outlet which are communicated with the outside; the growth gas channel is positioned above the accommodating cavity and is communicated with the accommodating cavity; the growth gas channel is provided with a growth gas inlet and a growth gas outlet which are communicated with the outside; the air floatation tray is coaxially and rotatably arranged in the accommodating cavity; an isolation structure isolates the rotating gas channel from the growth gas channel. When the growth equipment is used, the rotation stability of the air floatation tray is improved, mutual friction between the air floatation tray and the containing cavity is reduced, the growth quality of the substrate is improved, the service life and the maintenance period of the containing cavity and the air floatation tray are prolonged, and the growth cost of the substrate is reduced.

Description

Technical Field

[0001] The utility model belongs to the technical field of chemical vapor deposition. Specifically, it relates to a growth device and system. Background Art

[0002] In the operation of realizing wafer coating based on the chemical vapor deposition method (CVD), controlling the rotation of the wafer during the growth process is an important method to improve the uniformity of the growth results at different positions of the wafer. The reason is that the rotation of the wafer can make the temperature and flow field distributions at different positions of the wafer tend to be consistent.

[0003] The existing wafer growth devices are as Figure 1 shown. It includes a housing 1 and an air-bearing tray 2. A receiving cavity 11, a growth gas channel 12, and a rotating gas channel 13 are provided in the housing 1. Among them, the rotating gas channel 13 is located below the receiving cavity 11 and communicates with the receiving cavity 11. The growth gas channel 12 is located above the receiving cavity 11 and communicates with the receiving cavity 11. The air-bearing tray 2 is rotatably arranged in the receiving cavity 11, and an annular gap region 01 is formed between the outer side surface of the air-bearing tray 2 and the side wall of the receiving cavity 11.

[0004] When the wafer 3 grows in the wafer growth device, the wafer 3 is carried on the wafer tray 4, and the wafer tray 4 is carried on the air-bearing tray 2. The rotating gas enters the receiving cavity 11 through the rotating gas channel 13 and drives the air-bearing tray 2 to rotate, thereby causing the wafer 3 to rotate; the growth gas reaches above the receiving cavity 11 through the growth gas channel 12 and deposits on the wafer 3, causing the wafer 3 to grow. During the growth process of the wafer 3, the rotating gas also flows into the growth gas channel 12 from the upper end of the gap region 01 and is discharged from the wafer growth device together with the growth gas. At the same time, the growth gas also enters the receiving cavity 11 from the upper end of the gap region 01, resulting in the following problems:

[0005] 1. The growth gas entering the receiving cavity will deposit on the bottom of the air-bearing tray 2 and the cavity wall of the receiving cavity 11 to form a covering. These coverings will increase the friction between the air-bearing tray 2 and the cavity wall of the receiving cavity 11, which has an adverse impact on the rotation speed and stability of the air-bearing tray 2; moreover, as the thickness of the wafer 3 increases during growth, the amount of deposited covering also increases, and the friction also increases, having an increasingly greater impact on the rotation of the air-bearing tray 2. When the wafer 3 grows to a certain thickness, it is necessary to clean and maintain the air-bearing tray 2 and the receiving cavity 11, which limits the maintenance and service life of the air-bearing tray 2 and the entire growth chamber and increases the growth cost.

[0006] 2. The rotating gas easily carries particles on the cavity wall of the accommodation cavity 11 and the covering on the air-bearing tray 2 into the growth gas channel 12. The particles that fall into the growth gas channel 12 along with the rotating gas land on the wafer 3, forming defects and affecting the quality of the wafer. Moreover, as the growth thickness of the wafer increases, the thickness of the covering on the cavity wall of the accommodation cavity 11 and the air-bearing tray 2 increases, and the number of particles entering the growth gas channel 12 also increases accordingly. To ensure the quality of the wafer 3, the maintenance and service life of the air-bearing tray 2 and the entire growth chamber can only be shortened, resulting in an increase in the growth cost.

[0007] 3. The rotating gas damages the covering grown on the part of the wafer 3 near the gap area 01, causing the covering at this part to form loose and protruding particles, contaminating the wafer 3. Moreover, as the growth thickness of the wafer 3 increases, the thickness of the covering at 01 increases, and this phenomenon becomes more serious. To ensure the quality of the wafer 3, the maintenance and service life of the growth chamber can only be reduced, increasing the growth cost.

[0008] 4. The rotating gas and the growth gas form a convection at the upper end of the gap area 01, resulting in an unstable flow field at this position, affecting the growth of the wafer 3 and the quality of the wafer.

[0009] That is to say, when the existing growth equipment is in use, there is a large amount of interaction between the rotating gas and the growth gas. There are a large number of particles causing wafer defects, and the unstable rotation of the air-bearing tray reduces the growth uniformity of the wafer, resulting in poor growth quality of the wafer. In addition, due to the need to frequently clean the accommodation cavity and the air-bearing tray for depositing the covering, the service life of the accommodation cavity and the air-bearing tray is short, thereby increasing the growth cost. Summary of the Utility Model

[0010] The purpose of the present utility model is to provide a growth equipment and system, aiming to improve the growth quality of the substrate; increase the maintenance and service life of the accessories, and reduce the growth cost.

[0011] To achieve the above purpose, the present utility model provides a growth equipment, including:

[0012] A housing, inside which an accommodation cavity is formed, and the upper end of the accommodation cavity is an open end; a growth gas channel and a rotating gas channel are also formed on the housing; the rotating gas channel is communicated with the accommodation cavity, and the communication part between the two is lower than the upper end of the accommodation cavity; the rotating gas channel has a rotating gas inlet and a rotating gas outlet communicated with the outside; the growth gas channel is located above the accommodation cavity and is communicated with the accommodation cavity; the growth gas channel has a growth gas inlet and a growth gas outlet communicated with the outside;

[0013] An air-bearing tray, at least partially arranged in the accommodation cavity; the air-bearing tray is coaxial with the accommodation cavity, and the air-bearing tray is configured to be able to rotate self - sufficiently; and,

[0014] An isolation mechanism for isolating the rotating gas channel and the growth gas channel; the isolation mechanism is disposed between the side surface of the air-floating tray and the side wall of the accommodating cavity, and is at least partially located above the communicating portion between the rotating gas channel and the accommodating cavity.

[0015] Optionally, the isolation mechanism is located at the upper end of the accommodating cavity.

[0016] Optionally, the isolation mechanism is a labyrinth structure.

[0017] Optionally, the isolation mechanism includes at least one first convex portion and at least one second convex portion; the first convex portion is disposed on the side wall of the accommodating cavity, and the first convex portion extends radially inward along the accommodating cavity; the second convex portion is disposed on the side surface of the air-floating tray, and the second convex portion extends radially outward along the accommodating cavity;

[0018] At least one of the first convex portions and at least one of the second convex portions are alternately arranged in the axial direction of the accommodating cavity, and the first convex portion and the second convex portion partially overlap in the radial direction of the accommodating cavity.

[0019] Optionally, the number of the first convex portion and the second convex portion is one respectively.

[0020] Optionally, the growth device includes a first main housing, a second main housing, and a cover plate; the first main housing is disposed above the second main housing, and the first main housing is connected to the second main housing; the cover plate is located between the first main housing and the second main housing;

[0021] A concave cavity is formed on the upper surface of the second main housing, and the upper end of the concave cavity is an open end; the cover plate is disposed on the upper surface of the second main housing, and a first through hole is provided on the cover plate, and the first through hole is coaxially arranged with the concave cavity, and the radial dimension of the first through hole is smaller than the radial dimension of the concave cavity;

[0022] The accommodating cavity includes the concave cavity and the first through hole; the portion of the cover plate located above the concave cavity constitutes the first convex portion;

[0023] A cavity is formed on the second main housing, and the cavity constitutes at least a part of the rotating gas channel; there is a gap between the lower surface of the first main housing and the cover plate, and the gap constitutes at least a part of the growth gas channel.

[0024] Optionally, the cover plate includes a first sub-plate body and a second sub-plate body that are spliced together. A part of the edge of the first sub-plate body forms a first arc structure, and a part of the edge of the second sub-plate body forms a second arc structure. The second arc structure and the first arc structure are spliced to form the first through hole.

[0025] Optionally, the second main housing includes a second housing plate and a second partition; the cross-section of the second housing plate is arc-shaped, and the concave side of the second housing plate is arranged upward; the second partition is arranged horizontally and is connected to the concave side of the second housing plate; the concave cavity is formed on the upper surface of the second partition; the channel is also formed on the second partition;

[0026] The first main housing includes a first housing plate and a first partition; the cross-section of the first housing plate is arc-shaped, the concave side of the first housing plate is arranged downward, and the first housing plate is connected to the second housing plate; the first partition is arranged horizontally and is connected to the concave side of the first housing plate; there is a gap between the first partition and the cover plate.

[0027] Optionally, the rotating gas channel includes a rotating gas inlet channel and a rotating gas outlet channel; one end of the rotating gas inlet channel penetrates the bottom of the accommodating cavity to communicate with the accommodating cavity, the end of the rotating gas inlet channel away from the accommodating cavity constitutes the rotating gas inlet, one end of the rotating gas outlet channel penetrates the side wall of the accommodating cavity to communicate with the accommodating cavity, and the end of the rotating gas outlet channel away from the accommodating cavity constitutes the rotating gas outlet.

[0028] To achieve the above object, the present invention also provides a growth system, including a growth gas source, a rotating gas source, and the growth device as described in any one of the preceding items; the growth gas source is communicated with the growth gas inlet; the rotating gas source is communicated with the rotating gas inlet.

[0029] Compared with the prior art, the growth device and system of the present invention have the following advantages:

[0030] The foregoing growth device includes a housing, an air-floating tray, and an isolation mechanism; a receiving cavity is formed inside the housing, and the upper end of the receiving cavity is an open end; a growth gas channel and a rotating gas channel are further formed on the housing; the rotating gas channel communicates with the receiving cavity, and the communicating part of the two is lower than the upper end of the receiving cavity; the rotating gas channel has a rotating gas inlet and a rotating gas outlet communicating with the outside; the growth gas channel is located above the receiving cavity and communicates with the receiving cavity; the growth gas channel has a growth gas inlet and a growth gas outlet communicating with the outside; the air-floating tray is at least partially disposed inside the receiving cavity, the air-floating tray is coaxial with the receiving cavity, and the air-floating tray is configured to be able to rotate self-rotationally; the isolation mechanism is used to isolate the rotating gas channel and the growth gas channel; the isolation mechanism is disposed between the side surface of the air-floating tray and the side wall of the receiving cavity and is at least partially located above the communicating part of the rotating gas channel and the receiving cavity. The settings of the isolation mechanism and the rotating gas outlet effectively reduce the amount of growth gas entering the receiving cavity and the amount of rotating gas entering the growth gas channel. Thereby, it is possible to reduce and even eliminate the deposition coverings in the rotating gas channel, reduce and even eliminate the interactive convection between the growth gas and the rotating gas, thereby improving the substrate growth uniformity, reducing the number of defects caused by particles, improving the substrate growth quality, increasing the service life of the receiving cavity and the air-floating tray, and further reducing the substrate growth cost. Description of the Drawings

[0031] The drawings are used to better understand the present invention and do not constitute an improper limitation to the present invention. Among them:

[0032] Figure 1 is a partial structural schematic diagram of a growth device in the prior art;

[0033] Figure 2 is an overall structural schematic diagram of a growth device provided by the present invention according to an embodiment;

[0034] Figure 3 is an overall structural schematic diagram of a growth device provided by the present invention according to an embodiment, Figure 3 and Figure 2 have different viewing orientations;

[0035] Figure 4 is an overall structural schematic diagram of a growth device provided by the present invention according to an embodiment, Figure 4 and Figure 3 and Figure 2 have different viewing orientations;

[0036] Figure 5 is a partial cross-sectional view of a growth device provided by the present invention according to an embodiment;

[0037] Figure 6 FIG. 0 is an exploded view of a growth device provided by an embodiment of the present utility model, and a wafer tray and a wafer are also shown in the figure;

[0038] Figure 7 FIG. 1 is a schematic diagram of an application scenario of a growth device provided by an embodiment of the present utility model;

[0039] Figure 8 is Figure 7 an enlarged view of part A of the application scenario of the growth device shown in FIG. 2.

[0040] [Explanation of reference numerals is as follows]:

[0041] 10 - Growth device, 1, 100 - Housing, 11, 101 - Accommodation cavity, 12, 102 - Growth gas channel, 102a - Growth gas inlet, 102b - Growth gas outlet, 13, 103 - Rotating gas channel, 103a - Rotating gas inlet, 103b - Rotating gas outlet, 1031 - Rotating gas inflow channel, 1032 - Rotating gas outflow channel, 110 - First main housing, 111 - First housing plate, 1111 - First edge portion, 112 - First partition, 120 - Second main housing, 121 - Concave cavity, 122 - Second housing plate, 1221 - Second edge portion, 123 - Second partition, 124 - Channel, 1241 - First sub-channel, 1242 - Second sub-channel, 130 - Cover plate, 131 - First sub-plate body, 1311 - First arc structure, 132 - Second sub-plate body, 1321 - Second arc structure, 140 - First side plate, 141 - Second through hole, 142 - Third through hole, 150 - Second side plate, 151 - Fourth through hole, 152 - Fifth through hole, 160 - Third side plate, 170 - Fourth side plate, 2, 200 - Air-bearing tray, 300 - Isolation mechanism, 310 - First convex portion, 320 - Second convex portion, 400 - Rotating shaft, 01 - Gap area, 4, 20 - Wafer tray, 3, 30 - Wafer. Detailed implementation manners

[0042] The following specific examples illustrate the implementation modes of the present utility model. Those skilled in the art can easily understand other advantages and effects of the present utility model from the content disclosed in this specification. The present utility model can also be implemented or applied through other different specific implementation modes. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present utility model. It should be noted that the illustrations provided in this embodiment only schematically illustrate the basic concept of the present utility model. Therefore, only the components related to the present utility model are shown in the drawings, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and proportion of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0043] In addition, each of the following embodiments of the description content has one or more technical features. However, this does not mean that those who use the present utility model must implement all the technical features in any one embodiment at the same time, or can only separately implement some or all of the technical features in different embodiments. In other words, on the premise that implementation is possible, those skilled in the art can, according to the disclosure content of the present utility model and depending on the design specifications or implementation requirements, selectively implement some or all of the technical features in any one embodiment, or selectively implement the combination of some or all of the technical features in multiple embodiments, thereby increasing the flexibility when implementing the present utility model.

[0044] As used in this specification, the singular forms "a", "an", and "the" include plural referents, and the plural form "plural" includes more than two referents, unless the context clearly dictates otherwise. As used in this specification, the term "or" is generally used in the sense of including "and / or", unless the context clearly dictates otherwise, and the terms "mounted", "connected", "coupled" should be construed broadly. For example, it may be a fixed connection, a detachable connection, or an integral connection. It may be a mechanical connection or an electrical connection. It may be directly connected or indirectly connected through an intermediate medium, and may be the communication inside two components or the interaction relationship between two components. The relational terms such as "first", "second", etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations, nor do they indicate or imply relative importance or implicitly specify the quantity of the indicated technical features. It should be understood that the orientation or positional relationships indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", etc. are based on the orientation or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or component referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present invention. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0045] The object of the present invention is to provide a growth device which can be applied to epitaxy (such as epitaxy of SiC, GaSn, InP, etc.), growth of two-dimensional materials (such as graphene, molybdenum disulfide) and other thin film growth based on chemical vapor deposition method. In this article, the structures in the growth device are uniformly referred to as substrates. Through the application of this growth device, the uniformity during substrate growth can be improved, and the growth quality of the substrate can be enhanced. In addition, each component of this substrate growth device also has the advantage of a long service life.

[0046] To make the objects, advantages and features of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings. It should be noted that the drawings are in very simplified forms and use non-precise scales, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. The same or similar reference numerals in the drawings represent the same or similar components.

[0047] Figures 2 to 4 are views of the growth device 10 provided by the embodiment of the present invention in different directions.Figure 5 is a cross-sectional view of the growth device 10, Figure 6 and is an exploded schematic view of the growth device.

[0048] As Figures 2 to 6 shown, the growth device 10 includes a housing 100, an air-floating tray 200, and an isolation mechanism 300. Among them, a receiving cavity 101 is formed inside the housing 100, and the upper end of the receiving cavity 101 is an open end. A growth gas channel 102 and a rotating gas channel 103 are further formed on the housing 100. The rotating gas channel 103 communicates with the receiving cavity 101, and the communicating part of the rotating gas channel 103 and the receiving cavity 101 is lower than the upper end of the receiving cavity 101. The rotating gas channel 103 also has a rotating gas inlet 103a (not marked in the figure) and a rotating gas outlet 103b (not marked in the figure) communicating with the outside. The growth gas channel 102 is located above the receiving cavity 101 and communicates with the receiving cavity 101. The growth gas channel 102 has a growth gas inlet 102a (not marked in the figure) and a growth gas outlet 102b (not marked in the figure) communicating with the outside. The air-floating tray 200 is at least partially disposed in the receiving cavity 101, the air-floating tray 200 is coaxial with the receiving cavity 101, and the air-floating tray 200 is further configured to be able to rotate self-rotationally. The isolation mechanism 300 is disposed between the side surface of the air-floating tray 200 and the side wall of the receiving cavity 101, and at least part of the isolation mechanism 300 is located above the communicating part of the rotating gas channel 103 and the receiving cavity 101. The isolation mechanism 300 is configured to isolate the rotating gas channel 103 and the growth gas 102.

[0049] Figure 7 and Figure 8 shows a schematic diagram of the application scenario of the growth device, where the grown substrate is, for example, a SiC wafer, which will be referred to as wafer 30 in this article. As Figure 7 and Figure 8As shown in the figure, during operation, the wafer tray 20 carrying the wafer 30 is disposed on the upper surface of the air-floating tray 200; when rotational gas and growth gas are introduced into the rotational gas channel 103, the rotational gas enters the accommodating cavity 101 and drives the air-floating tray 200 to rotate. The air-floating tray 200 drives the wafer tray 20 and the wafer 30 thereon to rotate synchronously. The rotational gas also discharges from the rotational gas outlet 103b of the rotational gas channel 103 out of the growth device; the growth gas is deposited on the wafer 30 to form a covering, causing the wafer 30 to grow. During this process, the isolation mechanism 300 hinders the growth gas from entering the accommodating cavity 101 and also hinders the rotational gas from entering the growth gas channel, thereby hindering the interaction between the rotational gas and the growth gas. Therefore, the growth device has the following advantages:

[0050] (1) The growth gas entering the accommodating cavity 101 is effectively reduced or even non-existent. Therefore, the covering formed on the cavity wall of the accommodating cavity 101 and the surface of the air-floating tray 2 is reduced or even non-existent, making the friction between the air-floating tray 200 and the accommodating cavity 101 relatively stable and improving the rotational stability of the air-floating tray 200. As the thickness of the wafer 30 increases, the amount of covering accumulated in the accommodating cavity 101 is relatively reduced or even non-existent, and the amount of covering accumulated at the bottom of the air-floating tray 200 is reduced or even non-existent, which can reduce the cleaning, maintenance, and replacement frequency of the accommodating cavity 101 and the air-floating defoamer 00, thereby increasing the service life of the air-floating tray 200 and the accommodating cavity 101 and reducing the wafer growth cost.

[0051] (2) The covering on the cavity wall of the accommodating cavity 101 and the surface of the air-floating tray 200 is reduced or even completely disappears. Even if part of the rotational gas passes through the isolation mechanism 300 and merges into the growth gas channel 102, the number of covering particles carried by the rotational gas is difficult to reach the wafer 30, improving the quality of the wafer 30. Thus, the service life of the accommodating cavity 101 and the air-floating tray 200 can also be increased, and the wafer 30 growth cost can be reduced.

[0052] (3) The rotational gas flowing into the growth gas channel 102 is reduced, which can reduce the damage to the covering at the edge of the wafer 30 close to the air-floating tray 200. Reducing the introduction of particulate matter into the wafer 30 to cause defects and improving the quality of the wafer 30. Thus, the service life of the accommodating cavity 101 can also be increased, and the growth cost of the wafer 30 can be reduced.

[0053] (4) The interaction between the rotating gas and the growth gas is reduced, so that the convection formed by the two gases at the upper edge of the air-floating tray 200 is weakened, which is beneficial to improving the flow field stability at the upper edge of the air-floating tray 200, and further improving the growth uniformity of the wafer 30.

[0054] In summary, in the growth equipment provided by the embodiment of the present invention, by setting the rotating gas outlet 103b and the isolation mechanism 300, the interaction between the rotating gas and the growth gas is reduced or even completely eliminated. It is achieved to reduce or even eliminate the deposition coverings at the bottom of the air-floating tray 200 and in the accommodating cavity 101, reduce or even eliminate the convection between the growth gas and the rotating gas, further achieve the improvement of the growth uniformity of the wafer 30, reduce the number of defects of the wafer 30 caused by particles, improve the growth quality of the wafer, and also increase the service life of the accommodating cavity 101 and the air-floating tray 200, and reduce the growth cost of the wafer 30.

[0055] It should be noted that the cross-section of the accommodating cavity 101 and the cross-section of the air-floating tray 200 are usually circular. However, in an alternative embodiment, the cross-section of the accommodating cavity 101 may not be circular, but any one of a triangle, a rectangle, and a polygon. Similarly, the cross-section of the air-floating tray 200 is not circular, but any one of a triangle, a rectangle, and a polygon, as long as the air-floating tray 200 can rotate around its own axis under the drive of the rotating gas and can carry the wafer tray 20. It should also be noted that regardless of whether the cross-section of the accommodating cavity 101 is circular, the radial direction of the accommodating cavity 101 mentioned in this article refers to the extending direction of a straight line perpendicular to the axis of the accommodating cavity 101 and intersecting with the axis of the accommodating cavity 101.

[0056] The air-floating tray 200 may be entirely located within the accommodating cavity 101. For example, the upper end surface of the air-floating tray 200 is flush with the upper end surface of the accommodating cavity 101. Of course, the upper end of the air-floating tray 200 may also protrude from the accommodating cavity 101.

[0057] The embodiment of the present invention does not particularly limit the layout manner of the rotating gas channel 103, as long as the gas entering the accommodating cavity 101 through the rotating gas channel 103 can drive the air-floating tray 200 to rotate and then can be discharged from the rotating gas outlet 103b of the rotating gas channel 103 out of the accommodating cavity 101.

[0058] In an alternative embodiment, as Figure 5 and Figure 6As shown, the rotating gas channel 103 includes two sub-channels, namely a rotating gas inlet channel 1031 and a rotating gas outlet channel 1032. Among them, one end of the rotating gas inlet channel 1031 penetrates the bottom of the accommodating cavity 101 and communicates with the accommodating cavity 101, and one end of the rotating gas outlet channel 1032 penetrates the side wall of the accommodating cavity 101 and communicates with the accommodating cavity 101. The end of the rotating gas inlet channel 1031 far from the accommodating cavity 101 constitutes the rotating gas inlet 103a, and the end of the rotating gas outlet channel 1032 far from the accommodating cavity 101 constitutes the rotating gas outlet 103b. In this way, the rotating gas flows into the accommodating cavity 101 from the rotating gas inlet channel 1031 and drives the air-floating tray 200 to rotate, and then is discharged from the accommodating cavity 101 through the rotating gas outlet channel 1032.

[0059] In addition, to improve the rotation stability of the air-floating tray 200, in the embodiment of the present utility model, it is preferred that the air-floating tray 200 is connected to the cavity wall of the accommodating cavity 101 through a rotating shaft 400. The specific connection method is to open a connection hole (not marked in the figure) at the bottom of the accommodating cavity 101. The connection hole is coaxially arranged with the accommodating cavity 101. The lower end of the rotating shaft 400 is rotatably inserted into the connection hole, and the upper end of the rotating shaft 400 is connected to the air-floating tray 200 and remains circumferentially relatively stationary with the air-floating tray 200.

[0060] Preferably, the isolation mechanism 300 is located at the upper end of the accommodating cavity 101.

[0061] Please refer to Figure 5 , in an alternative embodiment, the isolation mechanism 300 is a labyrinth structure. Specifically, the isolation mechanism 300 includes at least one first convex portion 310 and at least one second convex portion 320. The first convex portion 310 is arranged on the side wall of the accommodating cavity 101, and the first convex portion 310 extends radially inward along the accommodating cavity 101 (that is, the first convex portion 310 extends in a direction away from the axis of the accommodating cavity 101). The second convex portion 320 is arranged on the side surface of the air-floating tray 200, and the second convex portion 320 extends radially outward along the accommodating cavity 101 (that is, the second convex portion 320 extends in a direction away from the axis of the accommodating cavity 101). At least one of the first convex portions 310 and at least one of the second convex portions 320 are alternately arranged in the axial direction of the accommodating cavity 101, and the first convex portion 310 and the second convex portion 320 partially overlap in the radial direction of the accommodating cavity 101.

[0062] In the embodiments of the present utility model, there are no special limitations on the specific numbers of the first convex portion 310 and the second convex portion 320. For example, in one embodiment, the number of the first convex portions 310 is two, and the number of the second convex portions 320 is one. At this time, one of the second convex portions 320 is located between the two first convex portions 310. For another example, the number of the first convex portions 310 is one, and the number of the second convex portions 320 is two. At this time, one of the first convex portions 310 is located between the two second convex portions 320. For still another example, the number of the first convex portions 310 is two, and the number of the second convex portions 320 is also two. At this time, the two first convex portions 310 and the two second convex portions 320 can be arranged from top to bottom in the order of: first convex portion 310 - second convex portion 320 - first convex portion 310 - second convex portion 320, or can be arranged from top to bottom in the order of: second convex portion 320 - first convex portion 310 - second convex portion 320 - first convex portion 310. For yet another example, the numbers of the first convex portion 310 and the second convex portion 320 are both one. At this time, the first convex portion 310 can be above the second convex portion 320, or the first convex portion 310 is below the second convex portion 320.

[0063] In a specific embodiment, both the first convex portion 310 and the second convex portion 320 are one, and the first convex portion 310 is above the second convex portion 320. Preferably, in this embodiment, the first convex portion 310 is a part of the housing 100.

[0064] Please continue to refer to Figure 5 and in combination with Figure 6 , the housing 100 includes a first main housing 110, a second main housing 120, and a cover plate 130. The first main housing 110 and the second main housing 120 are arranged in the up-down direction, and the cover plate 130 is located between the first main housing 110 and the second main housing 120.

[0065] Among them, a concave cavity 121 is formed on the upper surface of the second main housing 120, and the upper end of the concave cavity 121 is an open end. The cover plate 130 covers the upper surface of the second main housing 120, and a first through hole (not labeled in the figure) is formed on the cover plate 130. The first through hole is coaxially arranged with the concave cavity 121, and the radial dimension of the first through hole is smaller than the radial dimension of the concave cavity 121, so that a part of the cover plate 130 protrudes radially inward along the concave cavity 121 and is located above the side wall of the concave cavity 121. In this case, the accommodating cavity 101 includes the concave cavity 121 and the first through hole. The part of the cover plate 130 located above the concave cavity 121 constitutes the first convex part 310. It can be understood that the radial direction of the concave cavity 121 is the radial direction of the accommodating cavity 101.

[0066] There is also a gap between the lower surface of the first main housing 120 and the cover plate 130, and the gap between the lower surface of the second main housing 120 and the cover plate 130 constitutes at least a part of the growth gas channel 102. It should be noted that the gap between the first main housing 110 and the cover plate 130 includes the space between the first main housing 110 and the first through hole 130.

[0067] A cavity 124 is also formed on the second main housing 120, and this cavity constitutes at least a part of the rotating gas channel 103. Specifically, the cavity includes a first sub-cavity 1241 and a second sub-cavity 1242. The first sub-cavity 1241 penetrates the bottom of the accommodating cavity 101 and communicates with the accommodating cavity 101, and one end of the second sub-cavity 1242 penetrates the side wall of the accommodating cavity 101 and communicates with the accommodating cavity 101. That is, the first sub-cavity 1241 constitutes at least a part of the rotating gas inlet channel 1031, and the second sub-cavity 1242 constitutes at least a part of the rotating gas outlet channel 1032.

[0068] The second sub-cavity 1242 may not extend to the upper surface of the second main housing 120, or may extend to the upper surface of the second main housing 120 (as Figure 6 shown). When the second sub-cavity 1242 extends to the upper surface of the second main housing 120, the cover plate 130 functions to isolate the second sub-cavity 1242 from the growth gas channel 102.

[0069] Optionally, the first main housing 110 is of a combined structure, which includes a first shell plate 111 and a first partition plate 112. The first shell plate 111 is an arc-shaped plate, and its shape in the cross-section perpendicular to the axis of the housing 100 is arc-shaped, preferably circular arc-shaped. The first partition plate 112 is connected to the concave side of the first shell plate 111.

[0070] Similarly, the second main housing 120 is also a combined structure. The second main housing 120 includes a second shell plate 122 and a second partition plate 123. The second shell plate 122 is an arc-shaped plate, and its shape in a cross-section perpendicular to the axis of the housing 100 is arc-shaped, preferably circular arc-shaped. The second partition plate 123 is connected to the concave side of the second shell plate 122. When assembling the housing 100, the concave side of the first main housing 111 is arranged downward, the concave side of the second main housing 121 is arranged upward, and the first main housing 111 is connected to the second main housing 121. Both the first partition plate 112 and the second partition plate 123 are horizontally arranged. In this way, the upper surface of the second partition plate 123 constitutes the upper surface of the second main housing 120, and the lower surface of the first partition plate 112 constitutes the lower surface of the first main housing 110.

[0071] Based on the structures of the first main housing 110 and the second main housing 120, the concave cavity 121 is formed on the upper surface of the second partition plate 123, and the channel 124 is formed on the second partition plate 123. In addition, there is a gap between the first partition plate 112 and the cover plate 130.

[0072] It should be noted that in the embodiment of the present invention, the first shell plate 111 has two first edge portions 1111 opposite to each other in its circumferential direction, and the distance from the first partition plate 112 to the first edge portion 1111 is greater than zero. Similarly, the second shell plate 122 has two second edge portions 1221 opposite to each other in its circumferential direction, and the distance from the second partition plate 123 to the second edge portion 1221 is greater than zero. Moreover, after connecting the first shell plate 111 and the second shell plate 122, the distance between the first partition plate 112 and the second partition plate 123 is greater than the thickness of the cover plate 130. In this way, it can be ensured that there is a gap between the first partition plate 112 and the cover plate 130 after assembling the outer sides of the first main housing 110 and the second main housing 120.

[0073] Furthermore, the cover plate 130 is also a combined structure, which includes a first sub-plate body 131 and a second sub-plate body 132 that are spliced with each other. Part of the edge of the first sub-plate body 131 is formed into a first arc structure 1311, part of the edge of the second sub-plate body 132 is formed into a second arc structure 1321, and the second arc structure 1321 and the first arc structure 1311 are spliced to form the first through hole. The advantage of setting the cover plate 130 as a combined structure is that it is convenient to disassemble the cover plate 130, and thus it is convenient to maintain the air-floating tray 200 and the accommodation cavity 101. Preferably, both the first arc structure 1311 and the second arc structure 1321 are semi-circular arc-shaped.

[0074] In addition, the housing 100 further includes a first side plate 140 and a second side plate 150, and the first side plate 140 and the second side plate 150 are respectively arranged at two axial ends of the first main housing 110 (or the second main housing 120). The first side plate 140 is connected to the first main housing 110 and the second main housing 120, and the second side plate 150 is also connected to the first main housing 110 and the second main housing 120.

[0075] The first side plate 140 is provided with a second through hole 141 and a third through hole 142. The second side plate 150 is formed with a fourth through hole 151 and a fifth through hole 152. The second through hole 141 and the fourth through hole 151 are respectively communicated with the gap between the first partition plate 112 and the cover plate 130, so that the growth gas channel 102 further includes the second through hole 141 and the fourth through hole 151. The third through hole 142 and the fifth through hole 152 are respectively communicated with the channel 124 on the second partition plate 112. Thus, the rotation channel 102 further includes the third through hole 142 and the fifth through hole 152.

[0076] In an alternative embodiment, the third through hole 142 is communicated with one end of the first sub-channel 1241 away from the accommodation cavity 101 and constitutes the rotation gas inlet 103a, and the fifth through hole 152 is communicated with one end of the second sub-channel 1242 away from the accommodation cavity 101 and constitutes the rotation gas outlet 103b. That is, the rotation gas inflow channel 1031 includes the first sub-channel 1241 and the third through hole 142, and the rotation gas outflow channel 1032 includes the second sub-channel 1242 and the fifth through hole 152. In addition, correspondingly, the second through hole 141 constitutes the growth gas inlet 102a, and the fourth through hole 151 constitutes the rotation gas outlet 103b.

[0077] The housing 100 may further include a third side plate 160 and a fourth side plate 170, and the third side plate 160 and the fourth side plate 170 are arranged along the radial direction of the first shell plate 111 (or the second shell plate 122) and are respectively located on opposite sides of the first partition plate 112. The third side plate 160 is connected to the first shell plate 111 and the second shell plate 122, and the fourth side plate 170 is also connected to the first shell plate 111 and the second shell plate 122.

[0078] Furthermore, an embodiment of the present utility model further provides a growth system, including a growth gas source, a rotation gas source, and the growth device as described above. The growth gas source is communicated with the growth gas inlet 102a to provide growth gas for the growth device. The rotation gas source is communicated with the rotation gas inlet 103a to provide rotation gas for the growth device.

[0079] Although the present utility model is disclosed as above, it is not limited thereto. Those skilled in the art can make various changes and modifications to the present utility model without departing from the spirit and scope of the present utility model. Thus, if these modifications and variations of the present utility model fall within the scope of the claims of the present utility model and their equivalent technologies, the present utility model also intends to include these modifications and variations.

Claims

1. A growth device, characterized in that, Comprising: A housing, within which a receiving cavity is formed, and the upper end of the receiving cavity is an open end; a growth gas channel and a rotation gas channel are also formed on the housing; the rotation gas channel communicates with the receiving cavity, and the communication part between the two is lower than the upper end of the receiving cavity; the rotation gas channel has a rotation gas inlet and a rotation gas outlet communicating with the outside; the growth gas channel is located above the receiving cavity and communicates with the receiving cavity; the growth gas channel has a growth gas inlet and a growth gas outlet communicating with the outside; An air-floating tray, at least partially disposed within the receiving cavity; the air-floating tray is coaxial with the receiving cavity, and the air-floating tray is configured to be able to rotate self; and, An isolation mechanism for isolating the rotation gas channel and the growth gas channel; the isolation mechanism is disposed between the side surface of the air-floating tray and the side wall of the receiving cavity, and at least partially located above the communication part between the rotation gas channel and the receiving cavity.

2. The growth device according to claim 1, wherein The isolation mechanism is located at the upper end of the receiving cavity.

3. The growth device according to claim 1 or 2, characterized in that, The isolation mechanism is a labyrinth structure.

4. The growth device according to claim 3, characterized in that, The isolation mechanism includes at least one first convex portion and at least one second convex portion; the first convex portion is disposed on the side wall of the receiving cavity, and the first convex portion extends radially inward along the receiving cavity; the second convex portion is disposed on the side surface of the air-floating tray, and the second convex portion extends radially outward along the receiving cavity; At least one of the first convex portions and at least one of the second convex portions are alternately arranged in the axial direction of the receiving cavity, and the first convex portion and the second convex portion partially overlap in the radial direction of the receiving cavity.

5. The growth device according to claim 4, characterized in that, The number of the first convex portion and the second convex portion is one respectively.

6. The growth device according to claim 5, characterized in that, The growth device includes a first main housing, a second main housing and a cover plate; the first main housing is arranged above the second main housing, and the first main housing is connected to the second main housing; the cover plate is located between the first main housing and the second main housing; A concave cavity is formed on the upper surface of the second main housing, and the upper end of the concave cavity is an open end; the cover plate is disposed on the upper surface of the second main housing, and a first through hole is provided on the cover plate, and the first through hole is coaxially arranged with the concave cavity, and the radial dimension of the first through hole is smaller than the radial dimension of the concave cavity; The receiving cavity includes the concave cavity and the first through hole; the part of the cover plate located above the concave cavity constitutes the first convex portion; A cavity is opened on the second main housing, and the cavity constitutes at least a part of the rotation gas channel; there is a gap between the lower surface of the first main housing and the cover plate, and the gap constitutes at least a part of the growth gas channel.

7. The growth device according to claim 6, wherein, The cover plate includes a first sub-plate body and a second sub-plate body spliced with each other. Part of the edge of the first sub-plate body forms a first arc structure, and part of the edge of the second sub-plate body forms a second arc structure. The second arc structure and the first arc structure are spliced to form the first through hole.

8. The growth device according to claim 6, wherein The second main housing includes a second shell plate and a second partition plate; the cross-section of the second shell plate is arc-shaped, and the concave side of the second shell plate is arranged upward; the second partition plate is horizontally arranged and connected to the concave side of the second shell plate; the concave cavity is formed on the upper surface of the second partition plate; a cavity channel is also formed on the second partition plate. The first main housing includes a first shell plate and a first partition plate; the cross-section of the first shell plate is arc-shaped, the concave side of the first shell plate is arranged downward, and the first shell plate is connected to the second shell plate; the first partition plate is horizontally arranged and connected to the concave side of the first shell plate; there is a gap between the first partition plate and the cover plate.

9. The growth device according to claim 1, characterized in that, The rotating gas channel includes a rotating gas inlet channel and a rotating gas outlet channel; one end of the rotating gas inlet channel penetrates through the bottom of the accommodating cavity to communicate with the accommodating cavity, the end of the rotating gas inlet channel away from the accommodating cavity constitutes the rotating gas inlet, one end of the rotating gas outlet channel penetrates through the side wall of the accommodating cavity to communicate with the accommodating cavity, and the end of the rotating gas outlet channel away from the accommodating cavity constitutes the rotating gas outlet.

10. A growth system, characterized in that, It includes a growth gas source, a rotating gas source, and a growth device according to any one of claims 1-9; the growth gas source is communicated with the growth gas inlet; the rotating gas source is communicated with the rotating gas inlet.

Images