Double-laser cutting device for gallium oxide

Abstract

The utility model discloses a double-laser cutting device for gallium oxide, and belongs to the field of laser cutting. Comprising a first laser used for forming a first light path with the wavelength of 1020nm-1090nm and the pulse width of less than 10ns; the second laser is used for forming a second light path with the laser wavelength of 310-380 nm and the pulse width of less than 50 ps; the first optical scanning device is used for enabling the first laser to form a first cutting track on a workpiece to be cut; and the second optical scanning device is used for enabling the second laser to form a second cutting track on the workpiece to be cut. The method has the beneficial effects that laser cutting is carried out in a double-laser cutting mode, the wafer to be separated is obtained, finally, the wafer is separated through the film expanding machine, and the gallium oxide wafer which is excellent in machining quality and few in cutting defect is obtained.

Description

Technical Field

[0001] This application relates to the field of laser cutting, and more particularly, to a dual-laser cutting device for gallium oxide. Background Art

[0002] Gallium oxide (β-Ga2O3), as a new generation of semiconductor material, has the advantages of ultra-wide bandgap, high breakdown electric field strength, high ultraviolet transmittance, stable physical and chemical properties, etc., and can be widely used in the fields of microelectronics, optoelectronics, power devices, etc. In the field of microelectronics, gallium oxide can be used in the manufacture of devices such as high-frequency field-effect transistors, surface acoustic wave filters, and microwave switches because it can quickly respond to high-frequency electric fields. In the field of optoelectronics, its bandgap matches that of visible light and is suitable for devices such as LED lights, thin-film solar panels, and new optoelectronic sensors. In the field of power devices, gallium oxide has a wide bandgap characteristic (~4.8 eV) and can operate at higher voltages and power densities; it has higher performance potential compared to silicon carbide; however, the 100 crystal plane of β-Ga2O3 has strong cleavage and brittleness, so when cutting it, the crystal plane is prone to separation and crack phenomena.

[0003] Patent document 202180080243.9 proposes a separation method for β-Ga2O3. Referring to the attached drawings Figure 2 , this patent proposes to use a gallium oxide substrate with the main plane being the (001) plane, set the direction parallel to the intersection line of the main plane and the (100) plane as the X direction, and perform mechanical scribing processing of scribing a cutting groove on the main plane through the tip of a scribing tool along a cutting predetermined line parallel to the X direction, and perform laser scribing processing of deteriorating the cutting predetermined line by scanning a laser beam along a cutting predetermined line parallel to the Y direction, and break along the cutting predetermined lines in the X direction and Y direction after the mechanical scribing processing and the laser scribing processing. This patent mainly utilizes the easy cleavage characteristic of the first crystal plane and obtains the cutting lines by using mechanical scribing and laser scribing successively. It has been verified that during mechanical scribing, in addition to causing longitudinal cracks on the first crystal plane, transverse cracks are also caused, so crack propagation occurs during the breaking process, resulting in chipping phenomena in the obtained wafers. This problem makes this method only applicable to β-Ga2O3 with smaller sizes and has lower processing quality. Summary of the Utility Model

[0004] This part of the content of this application is used to briefly introduce ideas, which will be described in detail in the following detailed implementation part. This part of the content of this application is not intended to identify the key features or essential features of the claimed technical solution, nor is it intended to limit the scope of the claimed technical solution.

[0005] To solve the technical problems mentioned in the above background art section, some embodiments of the present application provide a dual-laser cutting device for gallium oxide, which is used to cut a workpiece to be cut of gallium oxide. A first crystal plane, a second crystal plane, and a third crystal plane that are connected to each other are formed on the workpiece to be cut; the first crystal plane is a surface with strong cleavage and brittleness; the cutting device includes: a first laser for forming a first optical path with a wavelength of 1020 nm - 1090 nm and a pulse width less than 10 ns for cutting the first crystal plane; a second laser for forming a second optical path with a laser wavelength of 310 nm - 380 nm and a pulse width less than 50 ps for cutting the second crystal plane or the third crystal plane; a first optical scanning device for causing the first laser to form a first cutting trajectory on the workpiece to be cut; and a second optical scanning device for causing the second laser to form a second cutting trajectory on the workpiece to be cut.

[0006] Further, the first optical scanning device includes: an optical scanning element and an optical focusing element; the optical focusing element is used to cause the first laser to form a cutting spot on the workpiece to be cut; the optical scanning element is used to cause the cutting spot to move on the workpiece to be cut to form the first cutting trajectory; the second optical scanning device is the same as the first optical scanning device.

[0007] Further, it further includes: an optical driving device; the optical driving device is used to adjust the incident angle of the first optical path incident on the workpiece to be cut.

[0008] Further, it further includes a moving carrier, and the moving carrier is used to mount the workpiece to be processed.

[0009] Further, a heat-conducting layer is formed at one end of the workpiece to be processed, and a film-expanding layer is formed at the other end; both the first optical path and the second optical path are provided on the heat-conducting layer.

[0010] Further, the heat-conducting layer is formed by laying one or more micro-nano particles of diamond, silver, copper, gold, aluminum nitride, silicon carbide, aluminum, graphite, and zinc on the end face of the workpiece to be processed; the film-expanding layer is formed by attaching a polyethylene film, a polyimide film, a polyamide film, and a fluorinated polymer film to the end face of the workpiece to be processed.

[0011] Further, both the heat-conducting layer and the film-expanding layer are film bodies.

[0012] Further, the average output power of the first laser is greater than 30 W; the peak power of the pulse of the second laser is greater than 200 kW, and the repetition frequency is greater than 100 kHz.

[0013] Furthermore, the wavelength of the first optical path output by the first laser is 1040 nm, the average output power is 50 W, and the pulse width is 5 ns; the wavelength of the second optical path output by the second laser is 355 nm, and the laser beam output by the laser 11 is a burst output: the pulse width is 20 ps, the peak power of the pulse is 500 kW, and the repetition frequency is 500 kHz.

[0014] The beneficial effects of this application are as follows:

[0015] Adopt a dual-laser cutting method. Utilize the easy cleavage characteristic of the first crystal plane. First, use the first optical path to perform laser stealth cutting on the first crystal plane to quickly form a crack extension layer along the first crystal plane; then use the second optical path to perform laser stealth cutting on the third crystal plane or the second crystal plane to obtain the wafer to be separated. Finally, use a film expanding machine to separate it to obtain a gallium oxide wafer with excellent processing quality and few cutting defects. Description of the Drawings

[0016] The drawings constituting a part of this application are used to provide a further understanding of this application, making other features, purposes, and advantages of this application more obvious. The schematic embodiments of this application and their descriptions are used to explain this application and do not constitute an improper limitation of this application.

[0017] In addition, throughout the drawings, the same or similar reference numerals represent the same or similar elements. It should be understood that the drawings are schematic, and the elements and elements are not necessarily drawn to scale.

[0018] In the drawings:

[0019] Figure 1 is the overall schematic diagram according to the embodiment of this application;

[0020] Figure 2 is the structural schematic diagram of a part of the embodiment, mainly showing the structure of the workpiece to be cut;

[0021] Figure 3 is the structure of the workpiece to be cut, the heat-conducting layer, and the film expanding layer.

[0022] Reference Numerals:

[0023] 1. First Laser; 2. Second Laser; 3. First Optical Scanning Device; 4. Second Optical Scanning Device; 5. Optical Scanning Element; 6. Optical Focusing Element; 7. Optical Driving Device; 8. Moving Carrier; 9. Heat-Conducting Layer; 10. Film Expanding Layer; 11. Workpiece to be Cut. Detailed Embodiments

[0024] Embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although some embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. On the contrary, these embodiments are provided to more thoroughly and completely understand the present disclosure. It should be understood that the drawings and embodiments of the present disclosure are only for exemplary purposes and are not used to limit the protection scope of the present disclosure.

[0025] In addition, it should be noted that for the sake of convenience of description, only parts related to the relevant invention are shown in the drawings. Without conflict, the embodiments in the present disclosure and the features in the embodiments can be combined with each other.

[0026] It should be noted that the concepts such as "first" and "second" mentioned in the present disclosure are only used to distinguish different devices, modules or units, and are not used to limit the order of functions executed by these devices, modules or units or their interdependent relationships.

[0027] It should be noted that the modifications of "one" and "plural" mentioned in the present disclosure are illustrative rather than restrictive. Those skilled in the art should understand that unless clearly specified otherwise in the context, it should be understood as "one or more".

[0028] The present disclosure will be described in detail below with reference to the drawings and in combination with embodiments.

[0029] Referring to Figures 1-3 ,

[0030] A double-laser cutting device for gallium oxide, the cutting device is used to cut a workpiece to be cut of gallium oxide, and a first crystal plane, a second crystal plane and a third crystal plane that are connected to each other are formed on the workpiece to be cut; referring to the accompanying drawings Figure 2 , the first crystal plane is the (100) crystal plane, the second crystal plane is the (001) crystal plane, and the third crystal plane is the (010) crystal plane. The first crystal plane is a surface with strong cleavage and brittleness. The cutting device includes: a first laser, a second laser, a first optical scanning device and a second optical scanning device. The first laser is used to form a first optical path with a wavelength of 1020 nm - 1090 nm and a pulse width less than 10 ns for cutting the first crystal plane. The second laser is used to form a second optical path with a laser wavelength of 310 nm - 380 nm and a pulse width less than 50 ps for cutting the second crystal plane or the third crystal plane. The first optical scanning device is used to make the first laser form a first cutting trajectory on the workpiece to be cut; the second optical scanning device is used to make the second laser form a second cutting trajectory on the workpiece to be cut.

[0031] The first laser optical path uses a nanosecond laser to form a crack extension layer on the workpiece to be cut. Since the parameters set by the first laser have the advantage of high pulse energy, the workpiece to be cut can undergo cleavage rapidly without the phenomenon of crack propagation in other directions. The second laser optical path uses an ultrafast laser to modify the interior of gallium oxide to obtain a pre-separation interface. Since the ultrafast laser has the advantage of an extremely small heat-affected zone, no cracks will be generated in the easy cleavage direction. Among them, the average output power of the first laser is greater than 30 W; the peak power of the pulses of the second laser is greater than 200 kW, and the repetition frequency is greater than 100 kHz. In a specific solution, the wavelength of the first optical path output by the first laser is 1040 nm, the average output power is 50 W, and the pulse width is 5 ns; the wavelength of the second optical path output by the second laser is 355 nm, and the laser beam output by the laser 11 is a pulse train output: the pulse width is 20 ps, the peak power of the pulse is 500 kW, and the repetition frequency is 500 kHz.

[0032] Specifically, the first optical scanning device includes: an optical scanning element and an optical focusing element; the optical focusing element is used to form a cutting spot of the first laser on the workpiece to be cut; the optical scanning element is used to move the cutting spot on the workpiece to be cut to form the first cutting trajectory; the second optical scanning device is the same as the first optical scanning device. Among them, the first cutting trajectory is to completely cover the surface of the workpiece to be cut by moving the spot, so that the first laser performs laser cutting on the surface of the workpiece to be cut. Similarly, the second laser uses the same scheme to perform laser cutting on the surface of the workpiece to be cut.

[0033] Specifically, it further includes: an optical driving device; the optical driving device is used to adjust the incident angle of the first optical path on the workpiece to be cut. The optical driving device can also be used to adjust the incident angle of the second optical path on the workpiece to be cut. In this embodiment, the optical driving device uses a driving motor. By setting multiple driving motors, the output end of the driving motor drives the first laser and the second laser to rotate, so as to realize adjusting the incident angle of the first optical path on the workpiece to be cut and realizing adjusting the incident angle of the second optical path on the workpiece to be cut. The optical driving device can also use a reflecting mirror to adjust the angle of the reflecting mirror to adjust the incident angle of the second optical path on the workpiece to be cut.

[0034] Specifically, it further includes a moving carrier, and the moving carrier is used to install the workpiece to be processed. The moving carrier is a vehicle body, and a workbench is arranged on the vehicle body, and the workbench is used to install the workpiece to be cut. Specifically, a clamping device is arranged on the workbench, and the workpiece to be cut is fixed and clamped through the clamping device. The clamping device uses mechanical claws, and the workpiece to be cut is fixed by clamping the workpiece with the mechanical claws.

[0035] Specifically, one end of the workpiece to be processed forms a heat-conducting layer, and the other end forms a film-expanding layer; both the first optical path and the second optical path are arranged on the heat-conducting layer. The heat-conducting layer is formed by laying one or more micro-nano particles of diamond, silver, copper, gold, aluminum nitride, silicon carbide, aluminum, graphite, and zinc on the end face of the workpiece to be processed; the film-expanding layer is formed by pasting a polyethylene film, a polyimide film, a polyamide film, or a fluorinated polymer film on the end face of the workpiece to be processed. Both the heat-conducting layer and the film-expanding layer are film bodies.

[0036] The above description is only some preferred embodiments of the present disclosure and an explanation of the applied technical principles. Those skilled in the art should understand that the scope of the invention involved in the embodiments of the present disclosure is not limited to the technical solutions formed by the specific combination of the above technical features, and should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the above inventive concept. For example, the technical solutions formed by mutually replacing the above features with the technical features (but not limited to) disclosed in the embodiments of the present disclosure that have similar functions.

Claims

1. A dual-laser cutting device for gallium oxide, which is used to cut a workpiece to be cut of gallium oxide, and a first crystal plane, a second crystal plane and a third crystal plane are formed and connected to each other on the workpiece to be cut; The first crystal plane is a surface with strong cleavage and brittleness; characterized in that, The cutting device includes: a first laser, which is used to form a first optical path with a wavelength of 1020nm - 1090nm for cutting the first crystal plane and a pulse width less than 10ns; A second laser, which is used to form a second optical path with a laser wavelength of 310nm - 380nm and a pulse width less than 50ps for cutting the second crystal plane or the third crystal plane; A first optical scanning device, which is used to make the first laser form a first cutting trajectory on the workpiece to be cut; A second optical scanning device, which is used to make the second laser form a second cutting trajectory on the workpiece to be cut.

2. The dual-laser cutting device for gallium oxide according to claim 1, characterized in that: The first optical scanning device includes: an optical scanning element and an optical focusing element; The optical focusing element is used to make the first laser form a cutting spot on the workpiece to be cut; the optical scanning element is used to move the cutting spot on the workpiece to be cut to form the first cutting trajectory; the second optical scanning device is the same as the first optical scanning device.

3. The dual-laser cutting device for gallium oxide according to claim 2, characterized in that: It further includes: An optical driving device; The optical driving device is used to adjust the incident angle of the first optical path incident on the workpiece to be cut. The dual-laser cutting device for gallium oxide according to claim 3, characterized in that: It further includes a moving carrier, and the moving carrier is used to install the workpiece to be processed.

5. The dual-laser cutting device for gallium oxide according to claim 4, characterized in that: One end of the workpiece to be processed forms a heat-conducting layer, and the other end forms a film-expanding layer; Both the first optical path and the second optical path are arranged on the heat-conducting layer.

6. The dual-laser cutting device for gallium oxide according to claim 5, characterized in that: The heat-conducting layer is formed by laying one or more micro-nano particles of diamond, silver, copper, gold, aluminum nitride, silicon carbide, aluminum, graphite and zinc on the end face of the workpiece to be processed; The film-expanding layer is formed by attaching a polyethylene film, a polyimide film, a polyamide film and a fluorinated polymer film to the end face of the workpiece to be processed.

7. The dual-laser cutting device for gallium oxide according to claim 6, characterized in that: Both the heat-conducting layer and the film-expanding layer are film bodies.

8. The dual-laser cutting device for gallium oxide according to claim 7, characterized in that: The average output power of the first laser is greater than 30W; the peak power of the pulse of the second laser is greater than 200kW, and the repetition frequency is greater than 100kHz.

9. The dual-laser cutting device for gallium oxide according to claim 8, characterized in that: The wavelength of the first optical path output by the first laser is 1040nm, the average output power is 50W, and the pulse width is 5ns; The wavelength of the second optical path output by the second laser is 355 nm, and the laser beam output by the second laser is a burst output: the pulse width is 20 ps, the peak power of the pulse is 500 kW, and the repetition frequency is 500 kHz.

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