Lithography system

Abstract

A lithography system includes an extreme ultraviolet light scanner. The cleaning system is arranged in the extreme ultraviolet light scanner and is configured to convey hydrogen to the extreme ultraviolet light scanner. The pump is connected with the extreme ultraviolet light scanner and is configured to remove hydrogen from the extreme ultraviolet light scanner. The first fuel cell is connected to the pump and configured to receive hydrogen from the pump. The power supply system is connected with the first fuel cell and is configured to receive power generated by the first fuel cell.

Description

Technical Field

[0001] This disclosure relates to a lithography system. Background Art

[0002] The semiconductor integrated circuit industry has experienced exponential growth. Leadership in technology in integrated circuit materials and design has produced many generations of integrated circuits, with each generation having smaller and more complex circuits than the previous one. During the evolution of integrated circuits, the functional density (i.e., the number of interconnected elements per unit wafer area) generally increases while the geometric dimensions (i.e., the smallest components (or lines) that can be created using the manufacturing process) decrease. This scaling down of dimensions generally brings benefits in terms of increased production efficiency and reduced associated costs. This scaling down of dimensions also increases the complexity of the processes and manufacturing of integrated circuits. Summary of the Utility Model

[0003] In one embodiment of this disclosure, a lithography system includes an extreme ultraviolet light scanner. A cleaning system is within the extreme ultraviolet light scanner and is configured to deliver hydrogen gas to the extreme ultraviolet light scanner. A pump is connected to the extreme ultraviolet light scanner and is configured to remove hydrogen gas from the extreme ultraviolet light scanner. A first fuel cell is connected to the pump and is configured to receive hydrogen gas from the pump. A power supply system is connected to the first fuel cell and is configured to receive the power generated by the first fuel cell.

[0004] In one embodiment of this disclosure, a lithography system includes an extreme ultraviolet light scanner. A cleaning system is within the extreme ultraviolet light scanner and is configured to deliver hydrogen gas to the extreme ultraviolet light scanner. A pump is connected to the extreme ultraviolet light scanner and is configured to remove the hydrogen gas from the extreme ultraviolet light scanner. A first fuel cell and a second fuel cell are connected to the pump and are configured to receive hydrogen gas from the pump. A power supply system is connected to the first fuel cell and the second fuel cell and is configured to receive a power generated by the first fuel cell and the second fuel cell.

[0005] In one embodiment of this disclosure, a lithography system includes an extreme ultraviolet light scanner. A cleaning system is within the extreme ultraviolet light scanner and is configured to deliver hydrogen gas to the extreme ultraviolet light scanner. A pump is connected to the extreme ultraviolet light scanner and is configured to remove hydrogen gas from the extreme ultraviolet light scanner. A first fuel cell is connected to the pump and is configured to receive hydrogen gas from the pump. A power supply system is connected to the first fuel cell and is configured to receive the power generated by the first fuel cell. A scrubber is connected to the fuel cell and is configured to receive hydrogen gas from the fuel cell. Description of the Drawings

[0006] As will be best understood from the following detailed description when read in conjunction with the accompanying drawings. Note that, in accordance with standard practice in the industry, the various features are not drawn to scale. In fact, for clarity of discussion, the dimensions of the various features may be arbitrarily increased or decreased.

[0007] Figure 1A and Figure 1B is a schematic diagram of a partial lithography scanner according to an embodiment of the present disclosure;

[0008] Figures 2 to 6 is a diagram of various embodiments of a system including a lithography apparatus and a fuel cell according to various aspects of the present disclosure;

[0009] Figure 7 is a flowchart of a method of manufacturing a component according to various aspects of the present disclosure.

[0010]

Symbol Description

[0011] 10: Lithography exposure system

[0012] 16: Mask stage

[0013] 18: Mask

[0014] 20: System

[0015] 22: Semiconductor wafer

[0016] 24: Substrate stage

[0017] 26: Mask layer

[0018] 30: Droplet generator

[0019] 31: Reservoir

[0020] 32: Nozzle group

[0021] 35: Droplet reservoir

[0022] 40: Gas source

[0023] 41: Gas pipeline

[0024] 50: Laser generator

[0025] 51: Laser pulse

[0026] 52: Bright spot

[0027] 55: Window

[0028] 60: Condenser

[0029] 61: Optical axis

[0030] 62: Cleaning system

[0031] 65: Pipe wall

[0032] 66: Pump

[0033] 68: Pump

[0034] 70: Monitoring element

[0035] 71: Measuring device

[0036] 73: Analyzer

[0037] 80: Target material

[0038] 82: Droplet

[0039] 82A: Debris

[0040] 84: Extreme ultraviolet light ray

[0041] 88: Plasma

[0042] 90: Controller

[0043] 100: Reflector

[0044] 120: Light source

[0045] 140: Illuminator

[0046] 180: Projection optical module

[0047] 200: Fuel cell

[0048] 210: Scrubber

[0049] 220: Facility system

[0050] 222: Power supply system

[0051] 230: Delivery pipeline

[0052] 240: Delivery pipeline

[0053] 250: Delivery pipeline

[0054] 260: Electric wire

[0055] 270: Delivery pipeline

[0056] 280: Delivery pipeline

[0057] 290: Delivery pipeline

[0058] 295: Delivery pipeline

[0059] 300: Fuel cell

[0060] 300A: Fuel cell

[0061] 300B: Fuel Cell

[0062] 310: Second Plate

[0063] 320: First Plate

[0064] 330: Oxygen

[0065] 335: Water

[0066] 340: Hydrogen

[0067] 342: Proton

[0068] 350: Cathode Electrode

[0069] 352: Excess Hydrogen

[0070] 360: Anode Electrode

[0071] 370: Electron

[0072] 380: Housing

[0073] 382: Handle

[0074] 390: Membrane

[0075] 400: Fuel Cell System

[0076] 410: Load

[0077] 500: Fuel Cell Block

[0078] 510: Water

[0079] 520: Duct

[0080] 530: Cover

[0081] 1000: Process

[0082] 1010: Operation

[0083] 1020: Operation

[0084] 1030: Operation

[0085] 1040: Operation

[0086] 1050: Operation

[0087] 1060: Operation

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[0089] IV-IV: Cross-Section Line Segment

[0090] H2: Hydrogen

[0091] H+ : Proton

[0092] O2: Oxygen

[0093] H2O: Water Detailed implementation manners

[0094] The following disclosure provides many different embodiments or examples for implementing different features of the provided subject matter. The following describes specific examples of components and configurations to simplify the present disclosure. Of course, these are only examples and are not intended to be restrictive. For example, in the following description, the formation of a first feature above or on a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features such that the first and second features are not in direct contact. Additionally, in various examples, the present disclosure may repeat reference numerals and / or letters. This repetition is for simplicity and clarity purposes and does not itself prescribe a relationship between the various embodiments and / or configurations discussed.

[0095] In addition, for ease of description, spatial relative terms such as "beneath", "below", "lower", "above", "upper", and the like may be used herein to describe the relationship of one element or feature to another element or feature as illustrated in the figures. In addition to the orientation depicted in the figures, these spatial relative terms are intended to also cover different orientations of the elements during use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and likewise, the spatial relative descriptors used herein may be interpreted accordingly.

[0096] Terms like "about", "approximately", "substantially", and the like may be used herein to simplify the description. Those of ordinary skill in the art are capable of understanding and inferring the meaning of such terms.

[0097] The present disclosure is generally related to a lithographic apparatus for manufacturing semiconductor devices, and more particularly to systems and methods including a fuel cell. The fuel cell can convert waste hydrogen gas from the lithographic apparatus into electricity. The method is related to improving the power efficiency of an extreme ultraviolet lithographic apparatus.

[0098] For decades, the lithography technology used to produce semiconductor components has been extended by increasing the numerical aperture of the optical projection of the exposure equipment. This exposure equipment can operate at the same wavelength as the previous generation of systems. For advanced lithography technologies such as extreme ultraviolet (EUV) lithography, this extension is under continuous development. EUV lithography is established as the technology of choice for high volume manufacturing (HVM) at the 5nm node (and even more advanced) to continue Moore's Law in the coming years. Even though existing EUV scanners have excellent imaging and overlay capabilities, the output and yield of components are still adversely affected by other factors, such as contamination of the imaging surface by molecules or particles. In addition, it is beneficial for the scanner to maintain high reflectivity of the light source and mirrors during its service life. From this perspective, the use of hydrogen is beneficial for preventing these problems due to reactions with tin plasma. A large amount of hydrogen is used during exposure and is directly burned in the scrubber. Hydrogen is a product of fossil fuels used for industrial manufacturing purposes.

[0099] The disclosed embodiments provide a method for recycling hydrogen, which generates electricity through a fuel cell during the operation of an extreme ultraviolet lithography system. Under the concept of environmental, social and corporate governance (ESG), hydrogen is recycled in manufacturing to reduce waste, which is the responsibility of companies in the global value chain. The fuel cell is placed between the pump and the scrubber to recycle waste hydrogen to generate electricity and become green manufacturing. The structure includes multiple fuel cells and has the advantages of easy maintenance and repair. The use of fuel cells can reduce the energy per wafer (EPW), which is a measure of the power consumption for each wafer processed by the extreme ultraviolet lithography system. Fuel cells become more and more advantageous as the amount of hydrogen used increases (which can be expected for each new manufacturing node).

[0100] Figure 1A FIG. and schematic diagram of a lithography exposure system 10 (or apparatus) according to some embodiments. The lithography exposure system 10 is described in detail to provide context for understanding the power supply system 222 that uses hydrogen (which can clean the collector of the lithography exposure system 10).

[0101] In some embodiments, the lithography exposure system 10 is an extreme ultraviolet (EUV) lithography system, designed to expose a photoresist layer with EUV rays and can be regarded as an EUV lithography exposure system 10. The EUV lithography exposure system 10 can also be regarded as an EUV scanner or a lithography scanner. According to some embodiments, the lithography exposure system 10 includes a light source 120, an illuminator 140, a mask stage 16, a projection optical module 180 (or a projection optics box (POB)), and a substrate stage 24. The components of the lithography exposure system 10 can be added or deleted, and the disclosure should not be limited by the implementation.

[0102] The light source 120 is configured to generate light rays with a wavelength ranging from about 1 nm to about 30 nm (in certain embodiments). In a particular example, the light source 120 generates EUV rays with a central wavelength of about or substantially 13.5 nm. Alternatively, the light source 120 can also be regarded as an EUV ray source. However, it should be noted that the light source 120 is not limited to emitting EUV rays. The light source 120 can be used to implement any high-intensity photon emission (from an excited target).

[0103] In various embodiments, the illuminator 140 includes various refractive optical elements, such as a single lens or a lens system with multiple reflectors 100, for example, multiple lenses (zone plates) or reflective optical elements (for EUV lithography exposure systems), such as a single mirror or a mirror system with multiple mirrors, to direct light from the light source 120 to the mask 18 disposed on the mask stage 16, especially the mask 18 on the mask stage 16. In embodiments where the light source 120 generates light in the EUV wavelength range, reflective optical elements are used. In some embodiments, the illuminator 140 includes at least two reflectors, at least three reflectors, or more.

[0104] The photomask stage 16 is configured to hold the photomask 18. In some embodiments, the photomask stage 16 includes an electrostatic chuck (e-chuck) to hold the photomask 18. One reason that the electrostatic chuck is advantageous is that gas molecules absorb extreme ultraviolet light rays, and the electrostatic chuck is operable in an extreme ultraviolet lithography exposure system maintained in a vacuum environment to avoid loss of extreme ultraviolet light. In this embodiment, the photomask 18 is a reflective photomask. An exemplary structure of the photomask 18 includes a substrate of a suitable material, such as a material with a low thermal expansion coefficient (low thermal expansion material, LTEM) or fused quartz. In various examples, the material with a low thermal expansion coefficient includes titanium dioxide-doped silica or other suitable materials with a low thermal expansion coefficient. The photomask 18 includes a reflective multilayer deposited on the substrate. The photomask stage 16 is operable to move in two horizontal directions (such as the X-axis direction and the Y-axis direction) so as to expose multiple different regions of the semiconductor wafer 22 to the light of the pattern generated by the photomask 18. The semiconductor wafer 22 may have a mask layer 26 thereon, which may be a photoresist layer sensitive to light (with the pattern of the photomask 18).

[0105] The projection optical module 180 (or projection optical box) is configured to image the pattern of the photomask 18 onto the semiconductor wafer 22, where the semiconductor wafer 22 is placed on the substrate stage 24 of the lithography exposure system 1 *0*. In some embodiments, the projection optical module 180 has refractive optical elements (such as for ultraviolet lithography exposure systems) or reflective optical elements in various embodiments (such as for extreme ultraviolet lithography exposure systems). The light rays guided from the photomask 18 (with the image of the pattern on the photomask) are collected by the projection optical module 180. The illuminator 140 and the projection optical module 180 can be regarded as the optical modules of the lithography exposure system 10 together. In some embodiments, the projection optical module 180 includes at least six reflective optical elements.

[0106] In some embodiments, the semiconductor wafer 22 may be made of silicon or other semiconductor materials. Alternatively or additionally, the semiconductor wafer 22 may include other elemental semiconductor materials, such as germanium (Ge). In some embodiments, the semiconductor wafer 22 is made of a compound semiconductor, such as silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs), or indium phosphide (InP). In some implementations, the semiconductor wafer 22 is made of a semiconductor alloy, such as silicon germanium (SiGe), silicon germanium carbide (SiGeC), gallium arsenide phosphide (GaAsP), or gallium indium phosphide (GaInP). In some other embodiments, the semiconductor wafer 22 may be a silicon-on-insulator (SOI) substrate or a germanium-on-insulator (GOI) substrate.

[0107] In addition, the semiconductor wafer 22 may have various components. Examples of components formed in the semiconductor wafer 22 include transistors (such as metal-oxide-semiconductor field-effect transistors (MOSFETs), complementary metal-oxide-semiconductor transistors (CMOS), bipolar junction transistors (BJTs), high-voltage transistors, high-frequency transistors, p-channel and / or n-channel field-effect transistors (PFETs / NFETs), etc.), capacitors, inductors, diodes, and / or other applicable components. Various processes may be implemented to form the components, such as deposition, etching, implantation, lithography, annealing, and / or other suitable processes. In some embodiments, the semiconductor wafer 22 is covered with a photoresist layer sensitive to extreme ultraviolet light rays. Various components include those described above and integrated together and may be operable to implement a lithography process.

[0108] The lithography exposure system 10 may include other modules or may be integrated (or coupled) to other modules, such as a cleaning module or device or system (such as the cleaning system 62) to supply hydrogen to the light source 120 and the tin supply system (designed to supply liquid tin to the light source 120). Hydrogen may help reduce contamination in the light source 120. The cleaning system 62 may clean the collector of the light source 120, but is not limited thereto. For example, tin debris 82A may be located on various components of the lithography exposure system 10, and the cleaning system 62 may spray hydrogen onto the various components to remove the tin debris 82A. More details of the light source 120 and the cleaning system 62 will be provided and in reference to the accompanying drawings Figure 1B .

[0109] According to some embodiments, in Figure 1BIn [the figure], light source 120 is shown as a schematic diagram. In some embodiments, light source 120 uses a mechanism of laser produced plasma (LPP) with double pulses to generate plasma 88 and additionally generate extreme ultraviolet light rays from the plasma. Light source 120 includes a droplet generator 30, a droplet reservoir 35, a laser generator 50, a laser-produced plasma collector 60, a monitoring element 70, and a controller 90. Some or all of the above-mentioned components of light source 120 can operate under vacuum. It should be noted that components of light source 120 can be added or deleted, and should not be limited by the embodiments.

[0110] Droplet generator 30 is configured to generate a plurality of droplets 82 (which may be elongated) of target material 80 to an excitation region. The excitation region is where at least one laser pulse 51 from laser generator 50 bombards droplet 82, as Figure 1B shown. In one embodiment, target material 80 includes tin (Sn). In one embodiment, droplets 82 can be formed and be oval-shaped. In one embodiment, the generation rate of droplets 82 is about 50 kHz and is introduced into the excitation region in light source 120 at a rate of about 70 meters per second. Other materials can also be used for target material 80, for example, liquid materials containing tin, such as a eutectic alloy of tin, lithium, and xenon. Target material 80 in droplet generator 30 can be in a liquid phase.

[0111] Laser generator 50 is configured to generate at least one laser pulse such that droplet 82 can be converted into plasma 88. In some embodiments, laser generator 50 is configured to generate laser pulse 51 to a bright spot 52 to convert droplet 82 into plasma 88 and generate extreme ultraviolet light rays 84. Laser pulse 51 is guided through window 55 (or lens) and irradiates droplet 82 at bright spot 52. Window 55 is formed on a part of collector 60 and is made of a suitable material that is substantially transparent to laser pulse 51. Droplet reservoir 35 receives and collects unused droplets 82 and / or materials scattered by droplet 82 (from laser pulse 51 bombarding droplet 82). Some of the scattered materials can be located on various components of lithography exposure system 10, such as collector 60 of light source 120 (which is closest to tin droplet 82 when tin droplet 82 is bombarded by laser pulse 51).

[0112] The plasma emits extreme ultraviolet light rays 84 (which are collected by collector 60). Collector 60 further reflects and focuses extreme ultraviolet light rays 84 through an exposure device for a lithography process. In some embodiments, collector 60 has an optical axis 61, which is parallel to the Z-axis and perpendicular to the X-axis. Collector 60 can include a single part (as shown) or at least two parts, which are offset from each other in the Z-axis direction.

[0113] The condenser 60 may also include a tube wall 65, to which a cleaning system 62 and a first pump 66 and a second pump 68 are connected. The cleaning system 62 may include one or more nozzles, which can spray high-pressure hydrogen gas in the direction of the lithography exposure system 10 (such as the condenser 60) to remove the tin debris 82A from the surface of the condenser 60. Cleaning by the cleaning system 62 is very beneficial for maintaining the mirror surface of the condenser 60, which can increase the output power of the light from the light source 120 and improve the wafer throughput.

[0114] In some embodiments, the first pump 66 and the second pump 68 include scrubbers, which are configured to remove particles and / or gases from the condenser 60. The first pump 66 and the second pump 68 (which may be collectively regarded as "pumps 66, 68" herein). In some embodiments, the first pump 66 and the second pump 68 do not include scrubbers and the scrubbers are external to the first pump 66 and the second pump 68 and are in fluid communication with the first pump 66 and the second pump 68 through one or more fuel cells, which will be described in more detail in the reference drawings Figure 2 The first pump 66 and the second pump 68 can operate to discharge hydrogen gas (such as waste hydrogen gas) from the lithography exposure system 10 to the fuel cell.

[0115] In one embodiment, the laser generator 50 is a carbon dioxide (CO2) laser source. In some embodiments, the laser generator 50 is used to generate laser pulses 51 having a single wavelength. The laser pulses 51 pass through an optical component for focusing and determining the incident angle of the laser pulses 51. In some embodiments, the laser pulses 51 have a spot size between about 200 microns and 300 microns (such as 225 microns). The laser pulses 51 are generated with a specific drive power to achieve the goal of wafer production, such as a production rate of 125 wafers per hour (wafer per hour, WPH). For example, the laser pulses 51 are equipped with a drive power of about 23 kW. In various embodiments, the drive power of the laser pulses 51 is at least 20 kW, such as 27 kW.

[0116] The monitoring element 70 is configured to monitor one or more conditions in the light source 120 to generate data for controlling adjustable parameters of the light source 120. In some embodiments, the monitoring element 70 includes a measuring device 71 and an analyzer 73. In the case where the measuring device 71 is configured to monitor the conditions of the droplets 82 (provided by the droplet generator 30), the measuring device 71 may include an image sensor (such as charge coupled devices (CCD)), a complementary metal oxide semiconductor sensor (CMOS), or the like. The measuring device 71 generates a monitoring image, including an image or video of the droplets 82 and transmits the monitoring image to the analyzer 73. In the case where the measuring device 71 is configured to detect the energy or intensity of the extreme ultraviolet light rays 84 (generated by the droplets 82 in the light source 120), the measuring device 71 may include some energy sensors. The energy sensor can be any suitable sensor (capable of observing and measuring the energy of electromagnetic radiation in the ultraviolet region).

[0117] The analyzer 73 is configured to analyze the signals generated by the measuring device 71 and output the detected signals to the controller 90 according to the analysis results. For example, the analyzer 73 includes an image analyzer. The analyzer 73 receives image-related data transmitted from the measuring device 71 and implements an image analysis process for the images of the droplets 82 in the excitation region. Subsequently, the analyzer 73 transmits the analysis-related data to the controller 90. The analysis may include errors in the flow path or position errors.

[0118] In some embodiments, two or more measuring devices 71 are used to monitor different conditions of the light source 120. One is configured to monitor the conditions of the droplets 82 (supplied by the droplet generator 30), and the other is arranged to detect the energy or intensity of the extreme ultraviolet light rays 84 (generated by the droplets 82 in the light source 120). In some embodiments, the measuring device 71 is a final focus module (FFM) and is arranged in the laser generator 50 to detect the light reflected from the droplets 82.

[0119] The controller 90 is configured to control one or more components of the light source 120. In some embodiments, the controller 90 is configured to drive the droplet generator 30 to generate droplets 82. In addition, the controller 90 is configured to drive the laser generator 50 to generate laser pulses 51. The generation of the laser pulses 51 can be controlled by the controller 90 to be related to the generation of the droplets 82, so that the laser pulses 51 can bombard each droplet 82 in sequence. The controller 90 may be configured to control the delivery of hydrogen and the exhaust of waste hydrogen through the first pump 66 and the second pump 68.

[0120] In some embodiments, the droplet generator 30 includes a reservoir 31 and a nozzle set 32. The reservoir 31 is configured to hold the target material 80. In some embodiments, a gas line 41 is connected to the reservoir 31 to introduce a pumping gas (such as argon) from a gas source 40 into the reservoir 31. By controlling the gas flow in the gas line 41, the pressure in the reservoir 31 can be manipulated. For example, when gas is continuously supplied to the reservoir 31 through the gas line, the pressure in the reservoir 31 will increase. Accordingly, the target material 80 in the reservoir 31 is forced to leave the reservoir 31 in the form of droplets 82. The reservoir 31 receives the target material 80 (such as liquid tin) from a target material supply system (which may include one or more low-pressure reservoirs and one or more high-pressure reservoirs).

[0121] Figure 2 FIG. is a schematic diagram of a system 20 that uses waste hydrogen gas from the lithography exposure system 10 to generate electricity according to various embodiments.

[0122] Figure 7 FIG. is a flowchart of a process 1000 according to various embodiments. In some embodiments, the process 1000 for forming an element includes a number of operations (operation 1010, operation 1020, operation 1030, operation 1040, operation 1050, and operation 1060). The process 1000 will be further described according to one or more embodiments. It should be noted that the operations of the process 1000 can be rearranged or changed and still be included within the scope of various aspects. More notably, additional processes can be provided before (or during or after) the process 1000, and other processes will only be briefly described herein. In some embodiments, the process 1000 is implemented by the system 20 (described in Figures 2 to 6 ). Embodiments are described and reference is made to the structural components (described in Figures 1A to 6 ), but the process 1000 can be implemented by a system having one or more structural components that may be different from the structural components of the system 20.

[0123] In Figure 2 , the system 20 includes a facility system 220, a lithography exposure system 10, a first pump 66, a second pump 68, a fuel cell 200, and a scrubber 210. The operation of the system 20 is described and reference is made to the operations 1010 to 1060 of the process 1000 depicted in Figure 7 .

[0124] The facility system 220 may include various equipment and / or subsystems, which may facilitate the fabrication of semiconductor wafers and / or integrated circuit dies. To maintain an extreme ultraviolet light scanner (which projects extreme ultraviolet light onto a semiconductor wafer to pattern very small features, such as the lithography exposure system 10), the facility system may include one or more cleanrooms, wafer handling and / or automation systems, mask equipment, metrology and inspection equipment, vacuum systems, photoresist material and processing systems, gas and chemical delivery systems, heating and / or cooling systems, power supply systems, wafer purification systems, and waste handling systems. The cleanroom has contamination control. The cleanroom has control over temperature, humidity, and particle levels, which is beneficial for achieving the quality and reliability of semiconductor fabrication. The wafer handling and / or automation system may include mechanical systems for handling wafers, which is beneficial for moving wafers between different equipment and process sites within the cleanroom. Automated wafer carriers and transport systems, such as overhead transport (OHT), can reduce human contact to prevent contamination. The mask equipment is operated to produce extreme ultraviolet light masks (used for patterning semiconductor wafers). The mask equipment may include mask fabrication equipment, inspection equipment, and repair systems. The metrology and inspection equipment is beneficial for measuring and verifying feature sizes and for measuring the quality of fabricated semiconductor wafers. The vacuum system can provide a vacuum environment, which is beneficial for extreme ultraviolet lithography (such as efficiency). The photoresist material processing and process system may include processing equipment and process equipment, which is beneficial for photosensitive photoresist materials (sensitive to extreme ultraviolet light) and for precise control during coating, baking, and developing steps. The gas and chemical delivery system delivers gases and chemicals to different equipment and processes. The heating and cooling system heats and / or cools many devices during semiconductor fabrication (which generates heat during operation) and can be beneficial for maintaining a stable operating temperature. Other systems of the facility system may include the power supply system 222, water purification system, gas supply system, and waste handling system.

[0125] In Figure 2 it, the lithography exposure system 10 may generate extreme ultraviolet light rays 84 from a tin droplet 82, corresponding to Figure 7 operation 1010. The extreme ultraviolet light rays 84 may be used to implement semiconductor processes on the wafer, corresponding to Figure 7 operation 1060. During the generation of the extreme ultraviolet light rays 84, the tin droplet is bombarded with laser light, which may generate tin debris 82A (accumulating on the surface of the condenser 60).

[0126] The tin debris 82A may be cleaned by directing hydrogen gas to the surface of the condenser 60, corresponding to Figure 7Operation 1020. Hydrogen is transported or supplied from the facility system 220 to the lithography exposure system 10 through one or more delivery pipelines 230 that connect the facility system 220 and the lithography exposure system 10. For example, the facility system 220 may include a hydrogen supply system that includes one or more tanks (for storing hydrogen) and one or more pumps (for transporting hydrogen to the lithography exposure system 10 through the delivery pipeline 230).

[0127] When hydrogen is sprayed into the lithography exposure system 10, one or more pumps (such as the first pump 66 and the second pump 68) extract waste hydrogen from the lithography exposure system 10 and transport the waste hydrogen to the fuel cell 200 through one or more delivery pipelines 240, corresponding to Figure 7 Operation 1030. The delivery pipeline is in fluid communication between the first pump 66 and the second pump 68 and the fuel cell 200. In some embodiments, the fuel cell 200 includes a plurality of fuel cells interconnected together (such as in a stacked form). The fuel cell 300 and the fuel cell block 500 are embodiments of the fuel cell 200 and will be described in more detail with reference to the accompanying drawings Figures 3 to 6 There will be a more detailed description.

[0128] The fuel cell 200 takes waste hydrogen and air as inputs and outputs electricity and hydrogen as outputs. That is, the fuel cell 200 uses hydrogen to generate electricity, which corresponds to Figure 7 Operation 1040. Hydrogen is transported from the lithography exposure system 10 to the fuel cell through the first pump 66 and the second pump 68 and the delivery pipeline 240. Air containing oxygen is transported to the fuel cell through the facility system 220 and the delivery pipeline 270. In some embodiments, compressed air is transported from an air compressor of the facility system 220. Electricity is transported to the facility system 220 through one or more electric wires 260. In some embodiments, the facility system 220 is a load of the fuel cell 200. In some embodiments, electricity is transported to an energy storage device of the facility system 220, such as a battery. In some embodiments, electricity is transported to the power supply system 222 of the facility system 220.

[0129] The power supply system 222 of the facility system 220 can perform various operations to integrate power into the system 20, for example, for use in the lithography exposure system 10. When power is generated, it is beneficial to fully connect the power to the electrical distribution system of the facility system. Such integration can include configuring the fuel cell 200 to be connected to the power supply system of the facility system and loading the distribution system of the facility system 220. For the generated power, it is beneficial to flow smoothly and safely to the power grid of the facility system 220 without causing interference or overload. The power generated by the fuel cell 200 is typically synchronized with the power of the main power grid. This synchronization includes the frequency, voltage, and phase of the power precisely matching the power parameters of the main power grid. Control systems and algorithms can be used to synchronize the two power sources to operate in coordination with each other to prevent interference or damage to sensitive equipment caused by phase mismatch or frequency difference. After the power is integrated from the fuel cell 200 into the power system and synchronized with the main power grid, the power distribution can be managed more advantageously. Power electronic components (such as inverters or converters) can effectively control the flow of power. The power distribution can be dynamically adjusted to direct power to the equipment of the system 20 and improve energy usage and prevent overload in various areas. Advanced power management algorithms and control systems can be used to generate a stable and reliable power supply for the entire system 20.

[0130] The power integrated into the power supply system of the facility system 220 is provided to the lithography exposure system 10, corresponding to Figure 7 operation 1050 in. Before burning the waste hydrogen in the scrubber 210, by guiding the waste hydrogen through the fuel cell 200, power can be generated and fed back to the power supply system 222 of the facility system 220, which can reduce the energy consumption per wafer caused by the lithography exposure system 10.

[0131] The scrubber 210 can be a scrubber of an incineration cleaning or "combustion scrubber". The scrubber 210 receives fuel and water from the facility system 220 through the delivery pipeline 280 and the delivery pipeline 290 respectively. The fuel can be used for the combustion part of the scrubbing while the water can be used for the cleaning part of the scrubbing. That is, the scrubber 210 receives excess hydrogen from the fuel cell 200 through the delivery pipeline 250. The hydrogen can be sprayed into the chamber of the scrubber 210 (heated by the burning fuel) or can be directly burned into the flame of the scrubber 210 (formed by the burning fuel). The incineration of the hydrogen and any pollutants here is directly achieved by the flame or indirectly heated in the chamber, and the decomposed pollutants are cleaned by water in the scrubber 210. The clean waste is then released to the atmosphere through the delivery pipeline 295 (or exhaust port). By using the fuel cell 200 to utilize some or all of the hydrogen to generate electricity, the amount of hydrogen burned (or wasted) in the scrubber 210 will be reduced, which can reduce the overall energy consumption for manufacturing the integrated circuit die of the lithography exposure system 10, and which can reduce the consumption of fossil fuels (because the load on the main power grid is reduced).

[0132] Figures 3 to 7 are perspective and schematic views of a fuel cell 300 and a fuel cell block 500 according to various embodiments. Figure 3 is a perspective view of the fuel cell 300. Figure 4 is in Figure 3 schematic view based on the middle cross-section line segment IV-IV. Figure 5 is a perspective view of the fuel cell block 500 in a connected configuration. Figure 6 is another perspective view of the fuel cell block 500, depicting the covers of the individual fuel cells.

[0133] In Figure 3 and ​ , the fuel cell 300 includes a housing 380, an anode electrode 360 (or positive electrode), a cathode electrode 350 (or negative electrode), a membrane 390, a first plate 320, and a second plate 310. The anode electrode 360, the cathode electrode 350 (or negative electrode), the membrane 390, the first plate 320, and the second plate 310 are disposed within the housing 380. The housing 380 can have a handle 382 mounted thereon. The side walls of the housing 380 are deleted in ​ so as not to obstruct the view of the internal structure of the fuel cell 300.

[0134] The first plate 320 can be a first bipolar plate or flow field plate and is operable to distribute a first reactant gas (e.g., hydrogen gas) to the electrochemically active area of the fuel cell 300. The first plate 320 can be a conduit for the gas (within the fuel cell 300). The first plate 320 is adjacent to the anode electrode 360. The first plate 320 can include one or more channels or grooves on both of its sides. The channels provide gas distribution, such that hydrogen gas can flow to contact the electrochemical reaction zone at the anode electrode 360. The channels are beneficial for evenly distributing hydrogen gas on the active surface adjacent to the membrane electrode assembly (MEA), where the adjacent membrane electrode assembly includes the anode electrode 360, the cathode electrode 350, and the membrane 390 therebetween. The first plate 320 can also be beneficial for providing connectivity between adjacent fuel cells (such as the fuel cell block 500 shown in ​ ), such that excess hydrogen gas 352 can flow to the subsequent fuel cell beneath the fuel cell 300. An airtight seal can be formed between the fuel cells 300, which enables the reactant gas (e.g., hydrogen gas) to flow efficiently between the individual fuel cells 300.

[0135] The second plate 310 is similar to the first plate 320 in most aspects, but it is located adjacent to the cathode electrode 350. The second plate 310 performs and distributes air containing oxygen therethrough.

[0136] The anode electrode 360 is between the channels of the first plate 320 and the membrane 390. Hydrogen gas 340 can enter the channels of the first plate 320 and then be separated into protons 342 and electrons 370 through the anode electrode 360. In some embodiments, the anode electrode 360 includes platinum or palladium, which is beneficial for separating hydrogen molecules into protons 342 and electrons 370.

[0137] The membrane 390 can be a polymer electrolyte membrane or a proton exchange membrane (PEM), which includes an ion-conducting polymer (allowing protons 342 to pass through while blocking electrons 370). The membrane 390 can be or include perfluorosulfonic acid (PFSA), polybenzimidazole (PBI), sulfonated polyether ketone (SPEK), sulfonated polyether ether ketone (SPEEK), or the like. The combination of the first plate 320, the membrane 390, and the second plate 310 can be regarded as a membrane electrode assembly (MEA).

[0138] In some embodiments, the membrane electrode assembly includes additional layers, such as a gas diffusion layer (GDL). Each gas diffusion layer can be or include carbon or carbon-based materials and has hydrophobic properties, which are beneficial for efficient gas transport and prevent water accumulation at the anode electrode 360 and the cathode electrode 350. The overall structure of the membrane electrode assembly including the gas diffusion layer can be of a stacked type and in the following order (from anode to cathode): anode gas diffusion layer, anode electrode 360, polymer electrolyte membrane 390, cathode electrode 350, and cathode gas diffusion layer. On both sides of the membrane electrode assembly, the gas diffusion layer can be in direct contact with the opposing bipolar plates (e.g., the first plate 320 and the second plate 310). The gas diffusion layer serves as an interface between the anode electrode 360 and the cathode electrode 350 of the membrane electrode assembly and the bipolar plates, and can provide electrical contact and uniform distribution of reactant gases (hydrogen and oxygen) to the anode electrode 360 and the cathode electrode 350. The gas diffusion layer can also allow by-products of the electrochemical reaction (such as water vapor) to leave the fuel cell 300.

[0139] The cathode electrode 350 of the fuel cell 300 is similar to the anode electrode 360 in terms of material composition in most aspects. The cathode electrode 350 is interposed between the membrane 390 and the second plate 310.

[0140] As depicted in the fuel cell system 400 in ​ , the cathode electrode 350 and the anode electrode 360 are connected to either end of the load 410. The load 410 can be the power supply system 222 of the facility system 220. In some embodiments, the load 410 is a battery, which can be charged by the current (or power) generated by the fuel cell 300.

[0141] When protons 342 leave the anode electrode 360 and enter the membrane 390, a potential difference is generated between the anode electrode 360 and the cathode electrode 350. Therefore, electrons 370 flow from the anode electrode 360 to the load 410 and then to the cathode electrode 350.

[0142] When the protons 342 pass through the membrane 390 and contact the cathode electrode 350, the protons 342 can recombine with the electrons 370 at the cathode electrode 350 to form hydrogen atoms. Then, the hydrogen atoms combine with oxygen in the air (flowing through the second plate 310) to form water 335. The water 335 and excess oxygen 330 are sprayed out from the fuel cell 300.

[0143] ​ and ​FIG. 500 is a diagrammatic perspective view of a fuel cell stack according to various embodiments. The fuel cell stack 500 includes at least two fuel cells (fuel cell 300A and fuel cell 300B) arranged in a vertical stack. Fuel cell 300A and fuel cell 300B are largely similar to fuel cell 200 and fuel cell 300 (as depicted in the reference drawings of ​ ). The housing 380 may include side walls, and conduits 520 are formed therein. Water 510 may flow through the conduits 520 to cool fuel cell 300A and fuel cell 300B. The conduits 520 of fuel cell 300A and fuel cell 300B are aligned, so that water 510 can flow from fuel cell 300B to the next fuel cell 300A. The respective anode electrodes 360 and cathode electrodes 350 of fuel cell 300A and fuel cell 300B are aligned and may be in direct contact with each other. In this way, the fuel cell stack 500 can have a higher current driving capacity compared to a single fuel cell 300. The fuel cell stack 500 may include more than two fuel cells (such as fuel cell 300A and fuel cell 300B depicted in ​ ).

[0144] In ​ , in the case where the fuel cells 300A and 300B of the fuel cell stack 500 are in a state where removal is required (such as when maintenance or repair is beneficial), the fuel cell 300A and / or the fuel cell 300B can be easily removed and replaced with a replacement fuel cell, so that the operation can continue without interruption. This benefit of easy removal and replacement is due to the presence of the conduits 520 and the aligned anode electrodes 360 and cathode electrodes 350 among the stacked fuel cells 300A and 300B.

[0145] In some embodiments, each of the fuel cells 300A and 300B includes a cover 530. The cover 530 can be flip - up, which is beneficial for implementing safe, fast, and easy removal and replacement (of the failed or soon - to - be - maintained fuel cells 300A and 300B). The structure of the flip - up cover 530 is mechanically connected to the housing 380 by bolts, nuts, or the like and can be opened during internal maintenance. The anode electrode 360 and the cathode electrode 350 (projecting from the flip - up cover 530) can be accessed to confirm whether the fuel cells 300A and 300B are properly interconnected to transfer current to generate electricity.

[0146] Embodiments can provide certain advantages. Fuel cells 200, 300, and / or fuel cell block 500 disposed between lithography exposure system 10 and scrubber 210 use hydrogen discharged from lithography exposure system 10 to generate electricity, which can be used to reduce the energy consumption per wafer caused by lithography exposure system 10. Fuel cell block 500 includes two or more stacked fuel cells (such as fuel cells 300A and 300B), which is beneficial for quick and easy repair and maintenance, and reduces the non-use time of fuel cell block 500.

[0147] According to at least one embodiment of the present disclosure, a method includes: forming a mask layer on a semiconductor wafer; generating light through a tin droplet of a lithography exposure system; exposing the mask layer through the light; cleaning tin debris accumulated in the lithography exposure system with hydrogen; pumping the hydrogen from the lithography exposure system to a fuel cell; and generating electricity through the fuel cell.

[0148] In some embodiments, it further includes: burning the hydrogen leaving the fuel cell through a scrubber.

[0149] In some embodiments, burning the hydrogen includes: burning less hydrogen through the scrubber than that pumped into from the lithography system.

[0150] In some embodiments, generating the electricity through the fuel cell includes generating the electricity through a fuel cell block, the fuel cell block including the fuel cell and at least one additional fuel cell in contact with the fuel cell.

[0151] In some embodiments, it further includes cooling the fuel cell with water.

[0152] In some embodiments, the cooling includes passing the water through a plurality of conduits of a plurality of housings of each of the fuel cell and the at least one additional fuel cell.

[0153] In some embodiments, it further includes: charging a battery with the electricity.

[0154] In some embodiments, it further includes: providing the electricity to the lithography exposure system.

[0155] According to at least one embodiment of the present disclosure, it includes: processing a semiconductor wafer through an extreme ultraviolet light scanner; cleaning the extreme ultraviolet light scanner with hydrogen; generating electricity through the hydrogen passing through a fuel cell; and providing the electricity back to the extreme ultraviolet light scanner.

[0156] In some embodiments, generating the electricity includes passing the hydrogen through a fuel cell block, the fuel cell block including a plurality of fuel cells, including the fuel cell.

[0157] In some embodiments, the method further includes replacing one of the plurality of fuel cells.

[0158] In some embodiments, the method further comprises: forming water from a first portion of the hydrogen gas through the fuel cell module; and burning a second portion of the hydrogen gas through a scrubber.

[0159] In some embodiments, the method further includes cooling the fuel cell module with water through respective conduits in a housing of each of the plurality of fuel cells.

[0160] In some embodiments, providing the power includes: integrating the power with a main power system through a power supply system; and transmitting a second power including at least a portion of the power to the EUV scanner through the power supply system.

[0161] According to at least one embodiment of the present disclosure, a system includes: an EUV scanner operable to generate EUV light by bombarding a plurality of tin droplets with at least one laser pulse; a cleaning system operable to direct a hydrogen gas in the EUV scanner to clean the EUV scanner; a pump operable to remove the hydrogen gas from the EUV scanner; a fuel cell operable to: receive the hydrogen gas from the pump; generate electricity from the hydrogen gas; and form water from a first portion of the hydrogen gas; a scrubber operable to: burn a second portion of the hydrogen gas; and a power supply system operable to: receive the electricity from the fuel cell; and deliver the electricity to the EUV scanner.

[0162] In some embodiments, the system further includes a fuel cell block comprising the fuel cell and a second fuel cell in contact with the fuel cell.

[0163] In some embodiments, the fuel cell includes a first housing through which a plurality of first conduits pass; and the second fuel cell includes a second housing through which a plurality of second conduits pass, the second conduits being aligned with the first conduits.

[0164] In some embodiments, each of the first fuel cell and the second fuel cell includes a reversible cover mounted to the respective first housing and the second housing.

[0165] In some embodiments, the power supply system includes a battery, and the fuel cell is operable to charge the battery with the electricity.

[0166] In some embodiments, it further includes a facility system of the power supply system, which, in operation: supplies the hydrogen to the cleaning system; supplies air to the fuel cell; and supplies a fuel and a second water to the scrubber.

[0167] In an embodiment of the present disclosure, a lithography system includes an extreme ultraviolet light scanner. The cleaning system is in the extreme ultraviolet light scanner and is configured to deliver hydrogen to the extreme ultraviolet light scanner. A pump is configured to remove hydrogen from the extreme ultraviolet light scanner. A first fuel cell is connected to the pump and is configured to receive hydrogen from the pump. The power supply system is connected to the first fuel cell and is configured to receive the power generated by the first fuel cell.

[0168] In some embodiments, the lithography system further includes a second fuel cell in contact with the first fuel cell.

[0169] In some embodiments, the first fuel cell includes a first housing and a plurality of first conduits passing through the first housing. The second fuel cell includes a second housing and a plurality of second conduits passing through the second housing, and the second conduits are aligned with the first conduits.

[0170] In some embodiments, each of the first fuel cell and the second fuel cell includes a flip-up cover mounted on the respective first housing and second housing.

[0171] In some embodiments, the lithography system further includes a scrubber, connected to the fuel cell and configured to receive hydrogen from the fuel cell.

[0172] In an embodiment of the present disclosure, a lithography system includes an extreme ultraviolet light scanner. The cleaning system is in the extreme ultraviolet light scanner and is configured to deliver hydrogen to the extreme ultraviolet light scanner. A pump is configured to remove the hydrogen from the extreme ultraviolet light scanner. A first fuel cell and a second fuel cell are connected to the pump and are configured to receive hydrogen from the pump. The power supply system is connected to the first fuel cell and the second fuel cell and is configured to receive a power generated by the first fuel cell and the second fuel cell.

[0173] In some embodiments, the first fuel cell and the second fuel cell are vertically stacked.

[0174] In some embodiments, the first fuel cell includes a first housing and a plurality of first conduits passing through the first housing. The second fuel cell includes a second housing and a plurality of second conduits passing through the second housing, and the second conduits are aligned with the first conduits.

[0175] In an embodiment of the present disclosure, a lithography system includes an extreme ultraviolet light scanner. A cleaning system is in the extreme ultraviolet light scanner and is configured to deliver hydrogen gas to the extreme ultraviolet light scanner. A pump is configured to remove hydrogen gas from the extreme ultraviolet light scanner. A first fuel cell is connected to the pump and is configured to receive hydrogen gas from the pump. A power supply system is connected to the first fuel cell and is configured to receive power generated by the first fuel cell. A scrubber is connected to the fuel cell and is configured to receive hydrogen gas from the fuel cell.

[0176] In some embodiments, the lithography system further includes a second fuel cell in contact with the first fuel cell.

[0177] The foregoing has outlined features of several embodiments so that those skilled in the art may better understand aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and / or achieving the same advantages as the embodiments described herein. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions and alterations therein without departing from the spirit and scope of the present disclosure.

Claims

1. A lithography system, characterized in that, Comprising: An extreme ultraviolet light scanner; A cleaning system, within the extreme ultraviolet light scanner, and configured to deliver hydrogen gas to the extreme ultraviolet light scanner; A pump, connected to the extreme ultraviolet light scanner, and configured to remove the hydrogen gas from the extreme ultraviolet light scanner; A first fuel cell, connected to the pump, and configured to receive the hydrogen gas from the pump; And A power supply system, connected to the first fuel cell, and configured to receive an electric power generated by the first fuel cell.

2. The lithography system according to claim 1, wherein It further comprises a second fuel cell in contact with the first fuel cell.

3. The lithography system according to claim 2, wherein, Wherein: The first fuel cell comprises a first housing and a plurality of first conduits passing through the first housing; and The second fuel cell comprises a second housing and a plurality of second conduits passing through the second housing, the plurality of second conduits being aligned with the plurality of first conduits.

4. The lithography system according to claim 3, wherein, Wherein each of the first fuel cell and the second fuel cell comprises a flip-up cover mounted on the respective first housing and second housing.

5. The lithography system according to claim 1, characterized in that, It further comprises a scrubber, connected to the first fuel cell, and configured to receive the hydrogen gas from the first fuel cell.

6. A lithography system, characterized in that, Comprising: An extreme ultraviolet light scanner; A cleaning system, within the extreme ultraviolet light scanner, and configured to deliver hydrogen gas to the extreme ultraviolet light scanner; A pump, connected to the extreme ultraviolet light scanner, and configured to remove the hydrogen gas from the extreme ultraviolet light scanner; A first fuel cell and a second fuel cell, connected to the pump, and configured to receive the hydrogen gas from the pump; And A power supply system, connected to the first fuel cell and the second fuel cell, and configured to receive an electric power generated by the first fuel cell and the second fuel cell.

7. The lithography system according to claim 6, wherein, Wherein the first fuel cell and the second fuel cell are vertically stacked.

8. The lithography system according to claim 6, wherein, Wherein: The first fuel cell comprises a first housing and a plurality of first conduits passing through the first housing; and The second fuel cell comprises a second housing and a plurality of second conduits passing through the second housing, the plurality of second conduits being aligned with the plurality of first conduits.

9. A lithography system, characterized in that, Comprising: An extreme ultraviolet light scanner; A cleaning system, within the extreme ultraviolet light scanner, and configured to deliver hydrogen gas to the extreme ultraviolet light scanner; A pump, connected to the extreme ultraviolet light scanner, and configured to remove the hydrogen gas from the extreme ultraviolet light scanner; A first fuel cell, connected to the pump, and configured to receive the hydrogen gas from the pump; A power supply system, connected to the first fuel cell, and configured to receive an electric power generated by the first fuel cell; And A scrubber, connected to the fuel cell, and configured to receive the hydrogen gas from the fuel cell.

10. The lithography system according to claim 9, wherein It further comprises a second fuel cell in contact with the first fuel cell.

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