Storage device with one-key destruction function

Abstract

The utility model provides a storage device with a one-key destruction function. The storage device comprises a circuit board, a control unit, a storage unit, a switch and a power supply, the destroying function comprises the following steps of: generating a pressing signal when the switch is pressed; the control unit generates pressing time according to the pressing signal; the control unit generates erasing voltage according to a first time preset value, a second time preset value and the pressing time; and the control unit carries out a destroying program on the storage unit according to the erasing voltage.

Description

Technical Field

[0001] The present invention relates to a storage device, in particular to a storage device with a one-button destruction function. Background Art

[0002] With the development of science and technology, computers are now popular everywhere, including home personal computers, portable laptops, computers used by people in companies and schools, and computers used to execute process steps and collect data in industrial manufacturing or laboratory operations.

[0003] In order to store user usage data, media, data and other information content, computers must be equipped with storage devices.

[0004] These common consumer electronics products store a wide range of personal information, including private photos, text messages, and phone calls. If the stored data is incompletely deleted, malicious actors could exploit file recovery techniques to steal the data. The increasing adoption of SSDs in commercial servers and laptops also means that critical internal corporate data could be compromised if these SSDs are lost.

[0005] In today's digital age, individuals and businesses are constantly at risk of data breaches. In an era of increasing data breaches and cyberattacks, ensuring the secure handling of personal and business data has become a crucial issue.

[0006] Because storage products have data security requirements in special applications, the storage and destruction of data have always been given great attention.

[0007] SSDs, short for "Solid-state drive," were originally designed to replace traditional hard drives. Their primary data storage element is an integrated circuit. Unlike traditional hard drives, which use a motor to spin internal platters and associated access control circuits to read and write data, SSDs use integrated circuits to access data. Therefore, unlike traditional hard drives, they lack disks and internal mechanical parts. Furthermore, the data access mechanism of an SSD is completely different from that of a traditional hard drive.

[0008] The most important component of an SSD is "non-volatile memory", such as NAND flash memory and NOR memory. In addition, based on the storage method, it is divided into single-level cell (SLC), multi-level cell (MLC), triple-level cell (TLC), quad-level cell (QLC), penta-level cell, and even 3D NAND flash memory.

[0009] Generally, the common methods for hard disk data destruction can be divided into eliminating electronic files and physically destroying the hard disk.

[0010] However, compared with traditional hard disks, the key reason why data is difficult to delete from SSDs is that "the way SSDs store data is completely different from that of traditional hard disks." Since SSDs use flash memory to store data, this also leads to differences in the storage methods between SSDs and traditional hard disks.

[0011] First of all, data cannot be rewritten repeatedly. The smallest storage space on flash memory is called a cell. A cell can store one bit of information, which can be 1 or 0. This is the so-called SLC storage method. To write new data, the potential information of this cell must be cleared by charging before it can be rewritten. Storing 2 bits of information with different potentials on one cell is MLC, which also has the characteristic of not being able to be rewritten repeatedly. Storing 3 bits of information with different potentials on one cell is TLC, which also has the characteristic of not being able to be rewritten repeatedly. Storing 4 bits of information with different potentials on one cell is QLC, which also has the characteristic of not being able to be rewritten repeatedly. Also, storing 5 bits of information with different potentials on one cell is PLC, which also has the characteristic of not being able to be rewritten repeatedly.

[0012] The method of deleting data from flash memory is also different from that of hard disk disks. It must adopt the method of "writing one by one and erasing in batches". The erasing speed of SSDs is much slower than the reading speed.

[0013] Therefore, for the data destruction of solid-state drives, physical destruction is necessary.

[0014] There are many common physical methods to destroy a hard disk, such as: soaking in water, damaging the hard disk body, damaging the hard disk particles, etc. In addition to physically damaging the hard disk body, the internal circuit of the hard disk can also be damaged to achieve data destruction. In view of this, the present invention provides a storage device destruction function triggered by a physical button, using the difference in trigger duration to enable the storage device controller to make a determination of the destruction method, enabling the coexistence of two destruction methods, HW Quick Erase and SW Quick Erase, and having a simple control method. Moreover, the present invention adopts continuous erasure. For example, if the power is cut off after the erasure is started, the erasure can be continued when the power is turned on again. Summary of the Invention

[0015] An object of the present invention is to provide a structure of a storage device with a one-key destruction function. The structure has a destruction function triggered by a physical button, and uses the difference in trigger duration to enable the storage device controller to make a determination of the destruction method.

[0016] For the above object, the present invention provides a structure of a storage device with a one-key destruction function. The storage device includes: a circuit board, a first switch, a second switch, a control unit, a storage unit, and a boost conversion unit, and further includes a power supply and a housing. Among them, when the first switch or the second switch is pressed to generate a pressing signal to the control unit, the control unit generates a pressing time. When the pressing time is greater than a first preset time value, the control unit issues a first erasure voltage to the storage unit to erase these storage blocks. When the pressing time is greater than a second preset time value, the control unit issues a second erasure voltage to the boost conversion unit, and the boost conversion unit correspondingly generates a voltage signal to the storage unit to break down the storage unit.

[0017] The present invention provides an embodiment, in which the first switch is disposed above the circuit board.

[0018] The present invention provides an embodiment, in which the housing is further provided with a second switch.

[0019] The present invention provides an embodiment, in which the circuit board is disposed inside the housing.

[0020] The present invention provides an embodiment, in which the control unit is disposed above the circuit board, and the control unit is electrically connected to the first switch and the second switch.

[0021] The present invention provides an embodiment, in which the storage unit is disposed above the circuit board, and the storage unit is electrically connected to the control unit.

[0022] The present invention provides an embodiment, in which the boost conversion unit is electrically connected to the control unit and the storage unit.

[0023] The present invention provides an embodiment, wherein the power supply is disposed inside the housing, and the power supply is electrically connected to the control unit and the boost conversion unit.

[0024] The present invention provides an embodiment, wherein the storage unit includes a plurality of storage blocks.

[0025] The present invention provides an embodiment, wherein a first light-emitting unit is further disposed above the circuit board, and the control unit is electrically connected to the first light-emitting unit.

[0026] The present invention provides an embodiment, wherein a second light-emitting unit is further disposed on the housing, and the control unit is electrically connected to the second light-emitting unit.

[0027] The present invention provides an embodiment, wherein pressing the first switch or the second switch generates a pressing signal to the control unit, and the control unit generates a pressing time according to the pressing signal.

[0028] The present invention provides an embodiment, wherein if the pressing time is less than a first time preset value, the control unit issues a first light-emitting signal to the first light-emitting unit and the second light-emitting unit.

[0029] The present invention provides an embodiment, wherein if the pressing time is greater than the first time preset value, the control unit issues a second light-emitting signal to the first light-emitting unit and the second light-emitting unit.

[0030] The present invention provides an embodiment, wherein the first time preset value is less than a second time preset value. If the pressing time is greater than the first time preset value and less than the second time preset value, the control unit issues a first erasing voltage to the storage unit to erase the plurality of storage blocks of the storage unit for software erasing of the storage unit.

[0031] The present invention provides an embodiment, wherein the first erasing voltage is greater than a threshold voltage of each of the plurality of storage blocks of the storage unit.

[0032] The present invention provides an embodiment, wherein if the pressing time is greater than the second time preset value, the control unit issues a second erasing voltage to the boost conversion unit, and the boost conversion unit correspondingly generates a voltage signal to the storage unit, and the voltage signal is greater than an operating voltage of the storage unit to break down the storage unit.

[0033] The present invention provides an embodiment, wherein the operating voltage has different voltage values according to different specifications of each brand of SSD, usually 5V or 3.3V. The operating voltage referred to in the present invention can be understood as the maximum operating voltage value of the storage unit.

[0034] The present invention provides an embodiment, wherein the first light-emitting unit and the second light-emitting unit are light-emitting diodes.

[0035] The present invention provides an embodiment, wherein the first light-emitting unit and the second light-emitting unit receive the first light-emitting signal and emit a first light ray.

[0036] The present invention provides an embodiment, wherein the first light-emitting unit and the second light-emitting unit receive the second light-emitting signal and emit a second light ray. Description of the Drawings

[0037] Figure 1 : It is a structural block diagram of the first embodiment of the present invention;

[0038] Figure 2 : It is a perspective view of the structure of the first embodiment of the present invention; and

[0039] Figure 3 : It is an external structure diagram of the first embodiment of the present invention.

[0040]

Description of Drawing Number Correspondence

[0041] 10 Housing

[0042] 101 Power Supply

[0043] 1021 First Switch

[0044] 1022 Second Switch

[0045] 1031 First Light-Emitting Unit

[0046] 1032 Second Light-Emitting Unit

[0047] 20 Circuit Board

[0048] 201 Control Unit

[0049] 202 Storage Unit

[0050] 203 Boost Conversion Unit

[0051] DS1 First Erasure Voltage

[0052] DS2 Second Erasure Voltage

[0053] HV1 Voltage Signal

[0054] L1 First Light Ray

[0055] L2 Second Light Ray

[0056] LS1 First Light-Emitting Signal

[0057] LS2 Second Light-Emitting Signal

[0058] PS1 Press signal

[0059] PST1 Press time

[0060] STB1 Storage block

[0061] STV1 Threshold voltage

[0062] T1 First time preset value

[0063] T2 Second time preset value

[0064] WV1 Working voltage Detailed implementation manner

[0065] In order to have a further understanding and recognition of the structural features and achieved effects of the present utility model, preferred embodiments and detailed descriptions are used as follows:

[0066] It is known that due to the data security requirements of storage products (SSDs) in special applications, the storage and destruction of their data have always been parts that are taken seriously. However, since the one-key destruction functions on the market are mostly single, the software destruction and hardware destruction exist separately and cannot be flexibly selected.

[0067] The present invention provides a storage device with a one-key destruction function. By means of the destruction function triggered by a physical button and using the difference in trigger duration, the storage device controller makes a determination of the destruction method, enabling the coexistence of two destruction methods and having a simple control method. When the user continuously presses the switch, the switch sends a press signal to the control unit, and the control unit generates a press time based on the press signal. The control unit determines whether to perform software erasure or hardware erasure on the storage unit according to the length of the press time.

[0068] In the following, the embodiments of the present invention will be described in detail with reference to the drawings. However, the concept of the present invention may be embodied in many different forms and should not be construed as limited to the exemplary embodiments described herein.

[0069] Please refer to FIGS. 1 to 3, which are structural diagrams of a storage device with a one-key destruction function according to a first embodiment of the present invention. As shown in the figures, the structure of the storage device with a one-key destruction function of the present invention is as follows: It includes: a housing 10; a second switch 1022 which is disposed on the housing 10; an inner side of the housing 10 includes: a circuit board 20; a first switch 1021, which is disposed above the circuit board 20; a control unit 201, which is disposed above the circuit board 20, and the control unit 201 is electrically connected to the first switch 1021 and the second switch 1022; a storage unit 202, which is disposed above the circuit board 20, and the storage unit 202 is electrically connected to the control unit 201; and a boost conversion unit 203, which is electrically connected to the control unit 201 and the storage unit 202; wherein, the storage device further includes: a power supply 101, which is electrically connected to the control unit 201 and the boost conversion unit 203.

[0070] Among them, the storage unit 202 includes a plurality of storage blocks STB1. Therefore, the control unit 201 controls the storage unit 202 to access data in these storage blocks STB1 according to a built-in mapping table (MAP). For example, the data received by the control unit 201 is written into at least one of these storage blocks STB1 through a data access channel. After the storage block STB1 accessed by the data access channel is full of data, the control unit 201 will write the received data into another storage block STB1, and so on. Until the storage unit 202 is full of the last storage block STB1, the control unit 201 will start to erase the data in these storage blocks STB1 to write the next data received by the control unit 201. For example, each storage block STB1 includes a plurality of storage elements (Cells). In terms of the access method of a single storage element (Cell) with a MOSFET structure, when a working voltage is applied to a control gate of the storage element (Cell), and a ground voltage (for example, 0V voltage) is applied to a source, a drain, and a base of the storage element (Cell), it is recorded as binary logic 0. When a ground voltage (for example, 0V voltage) is applied to the control gate of the storage element (Cell), and a ground voltage (for example, 0V voltage) is applied to the source, drain, and base of the storage element (Cell), the record will change to binary logic 1. When the control unit 201 erases data, a ground voltage (for example, 0V voltage) is applied to the control gate of the storage element (Cell), and an erase voltage (for example, the first erase voltage DS1) is applied to the source, drain, and base of the storage element (Cell) to erase the bit data stored in the storage element (Cell). The control unit 201 uses an entire storage block as the basic unit for erasing data, rather than a single storage element (Cell). That is, each time the control unit 201 erases data, it will erase one of these storage blocks STB1, and the storage block STB1 with erased data will show that all storage elements (Cells) are binary logic 1.

[0071] Among them, a first light-emitting unit 1031 is further provided above the circuit board, and the control unit 201 is electrically connected to the first light-emitting unit 1031.

[0072] Among them, a second light-emitting unit 1032 is further provided on the housing 10, and the control unit 201 is electrically connected to the second light-emitting unit 1032.

[0073] Among them, continuously pressing the first switch 1021 or the second switch 1022 generates a pressing signal PS1 to the control unit 201, and the control unit 201 generates a pressing time PST1 according to the pressing signal PS1.

[0074] Among them, if the pressing time PST1 is less than the first time preset value T1, the control unit 201 issues a first light emission signal LS1 to the first light emitting unit 1031 and the second light emitting unit 1032.

[0075] Among them, if the pressing time PST1 is greater than the first time preset value T1, the control unit 201 issues a second light emission signal LS2 to the first light emitting unit 1031 and the second light emitting unit 1032.

[0076] Among them, the first time preset value T1 is less than the second time preset value T2. If the pressing time PST1 is greater than the first time preset value T1 and less than the second time preset value T2, the control unit 201 issues a first erasure voltage DS1 to the storage unit 202 to erase a plurality of storage blocks STB1 of the storage unit 202.

[0077] Among them, the erasure method of this embodiment is that the first erasure voltage DS1 is greater than the threshold voltage STV1 of each of the plurality of storage blocks STB1 of the storage unit 202, so that all bits of the corresponding storage block STB1 to be erased are 1 or invalid storage data all being 0. Therefore, the original stored data of the storage block STB1 to be erased is cleared. For example, by applying the first erasure voltage DS1 to the storage block STB1 to be erased, all bits of the storage block STB1 to be erased become 1, that is, the data stored in the storage block STB1 to be erased is converted into invalid storage data. Therefore, the next data can be written into the storage block STB1 where the data has been erased, that is, data erasure is performed by applying the first erasure voltage DS1 to the storage block STB1.

[0078] Among them, if the pressing time PST1 is greater than the second time preset value T2, the control unit 201 issues a second erasure voltage DS2 to the boost conversion unit 203. The boost conversion unit 203 correspondingly generates a voltage signal HV1 to the storage block STB1 of the storage unit 202. The voltage signal HV1 is greater than the working voltage WV1 of the storage unit 202 to break down the flash memory cells corresponding to the storage block STB1 of the storage unit 202 for data destruction in the hardware erasure method, that is, data destruction of the flash memory cells in the SSD is performed using the second erasure voltage DS2. And the control unit 201 manages the Flash cells that have been data-destroyed and the normally operating Flash cells separately. After being broken down and destroyed, the Flash Cells will be completely scrapped, and the data cannot be restored by any means and data access cannot be performed.

[0079] Among them, the working voltage has different voltage values according to the specifications of different brands of SSDs, usually 5V or 3.3V. The working voltage referred to in this new type can be understood as the maximum working voltage value of the storage unit.

[0080] Among them, the first light-emitting unit 1031 and the second light-emitting unit 1032 are light-emitting diodes.

[0081] Among them, the first light-emitting unit 1031 and the second light-emitting unit 1032 receive the first light signal LS1 and emit the first light ray L1.

[0082] Among them, the first light ray L1 is constantly on.

[0083] Among them, the first light-emitting unit 1031 and the second light-emitting unit 1032 receive the second light signal LS2 and emit the second light ray L2.

[0084] Among them, the second light ray L2 is flickering.

[0085] In the above-described embodiments, the storage device with a one-key destruction function of the present invention triggers the storage device destruction function through a physical button. By using the difference in trigger duration, the storage device controller makes a determination of the destruction method, enabling two destruction methods to coexist and having a simple control method, solving the problem that the one-key destruction function of conventional storage devices is mostly single, with software destruction and hardware destruction existing separately and unable to be flexibly selected.

[0086] In the above embodiments, the magnitudes of the sequence numbers of the steps do not mean the order of execution. The order of execution of each process should be determined by its function and internal logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.

[0087] The above is only the preferred embodiments of the present invention, and is not used to limit the scope of implementation of the present invention. All equivalent changes and modifications made according to the shape, structure, features and spirit described in the scope of the claims of the present invention should be included within the scope of the claims of the present invention.

Claims

1. A storage device with a one-key destruction function, characterized in that, It includes: A circuit board, with a first switch further arranged above it; A control unit, which is arranged above the circuit board, and the control unit is electrically connected to the first switch; A storage unit, which is arranged above the circuit board, and the storage unit is electrically connected to the control unit; and A boost conversion unit, which is electrically connected to the control unit and the storage unit; Wherein, pressing the first switch generates a pressing signal to the control unit. When the control unit generates a pressing time according to the pressing signal and the pressing time is greater than a first preset time value, the control unit sends a first erasing voltage to the storage unit. The first erasing voltage is greater than a threshold voltage of each of multiple storage blocks of the storage unit to erase these storage blocks. When the pressing time is greater than a second preset time value, the control unit sends a second erasing voltage to the boost conversion unit, and the boost conversion unit correspondingly generates a voltage signal to the storage unit. The voltage signal is greater than an operating voltage of the storage unit to break down the storage unit.

2. The storage device with a one-key destruction function as described in claim 1, wherein, Wherein, On the outer side of the storage device, it further includes: A housing, wherein the housing is further provided with a second switch, and the second switch is electrically connected to the circuit board; Wherein, pressing the second switch generates the pressing signal to the control unit. When the control unit generates the pressing time according to the pressing signal and the pressing time is greater than the first preset time value, the control unit sends the first erasing voltage to the storage unit. The first erasing voltage is greater than the threshold voltage of each of multiple storage blocks of the storage unit to erase these storage blocks. When the pressing time is greater than the second preset time value, the control unit sends the second erasing voltage to the boost conversion unit, and the boost conversion unit correspondingly generates the voltage signal to the storage unit. The voltage signal is greater than the operating voltage of the storage unit to break down the storage unit.

3. The storage device with a one-key destruction function according to claim 2, wherein, Wherein, The storage device further includes: A power supply, which is arranged inside the housing, and the power supply is electrically connected to the control unit and the boost conversion unit.

4. The storage device with a one-key destruction function as described in claim 2, wherein, Wherein, The circuit board is further provided with a first light-emitting unit, the control unit is electrically connected to the first light-emitting unit, the housing is further provided with a second light-emitting unit, and the control unit is electrically connected to the second light-emitting unit.

5. The storage device with a one-key destruction function according to claim 4, wherein, Wherein, If the pressing time is less than the first preset time value, the control unit sends a first light-emitting signal to the first light-emitting unit and the second light-emitting unit.

6. The storage device with a one-key destruction function as described in claim 4, wherein, Wherein, If the pressing time is greater than the first preset time value, the control unit sends a second light-emitting signal to the first light-emitting unit and the second light-emitting unit.

7. The storage device with a one-key destruction function as claimed in claim 4, wherein, Wherein, The first light-emitting unit and the second light-emitting unit are light-emitting diodes.

8. The storage device with a one-key destruction function according to claim 5, wherein, Wherein, The first light-emitting unit and the second light-emitting unit receive the first light-emitting signal and emit a first light ray.

9. The storage device with a one-key destruction function according to claim 6, wherein Wherein, The first light-emitting unit and the second light-emitting unit receive the second light-emitting signal and emit a second light ray.

Images