Adjustable imprinting mother set

Abstract

The utility model provides an adjustable imprinting master mask. The adjustable imprinting master mask comprises a first material layer, an insulating layer, a first metal layer, a second material layer and a second metal layer which are arranged in sequence, patterning the second metal layer to form a micro-nano structure in the second material layer; the micro-nano structure generates displacement along a first direction under the modulation of a first voltage of the first material layer; and / or; the micro-nano structure generates displacement along a second direction under the modulation of a second voltage of the first metal layer and the second metal layer; a diffraction element of an optical structure is formed through micro-nano structure imprinting; the height increase or decrease of the micro-nano structure of the master mask in the second direction is limited, so that the cycle, duty ratio and height adjustment of the micro-nano structure within a certain range is realized, and the applicability and utilization rate of the master mask are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to an adjustable imprint master. Background Art

[0002] In an existing method for manufacturing micro-nano structures, the first step is to make an imprint master, which is then etched based on the designed micro-nano structure to form the required imprint master, and then the imprint glue layer is imprinted through the imprint master to form the micro-nano-micro-nano structure. Often, the structure of this imprint master is etched according to a pre-designed design, and the micro-nano-micro-nano structure of each area is uniquely determined for different areas of the master. When the micro-nano-micro-nano structure of different areas of the master needs to be adjusted according to different ID requirements of the design, the imprint master needs to be remade. Therefore, the existing master design can only be designed for a micro-nano-micro-nano structure of a determined ID, and has poor flexibility. It cannot adapt to application scenarios when multiple micro-nano-micro-nano structures change, especially when local micro-nano-micro-nano structures change, which easily leads to low efficiency of the existing master and high production costs.

[0003] Therefore, the present invention aims to solve the problems existing in the prior art and improve the prior art. Utility Model Content

[0004] The utility model provides an adjustable imprint master, which aims to solve the problem that the structure of the imprint master in the prior art is not adjustable, adjust the micro-nano structures in different areas, and improve the adjustability of the micro-nano structures in some areas of the imprint master.

[0005] An adjustable grating master comprises a first material layer, an insulating layer, a first metal layer, a second material layer, and a second metal layer, which are arranged in sequence; the second metal layer is patterned to form a micro-nano structure in the second material layer, and the micro-nano structure is used to emboss and form the optical structure of an optical product; the micro-nano structure is displaced along a first direction under a first voltage modulation of the first material layer; and / or the micro-nano structure is displaced along a second direction under a second voltage modulation of the first metal layer and the second metal layer.

[0006] In detail, the first direction is the direction in which the incident light propagates along the micro-nanostructure and in the first material layer; the second direction is the direction along the height of the micro-nanostructure and away from the first material layer.

[0007] In the above embodiment, the displacement ranges from 2 nm to 200 nm.

[0008] Furthermore, it also includes that the width of the micro-nanostructure in the first direction increases or decreases; and / or; the height of the micro-nanostructure in the second direction increases or decreases.

[0009] Further, optionally, the first voltage and the second voltage are different.

[0010] Furthermore, the displacement generated along the first direction is defined as △L1=d1*V1, wherein d1 represents the piezoelectric strain coefficient of the first material layer, and V1 is the magnitude of the applied first voltage; the displacement generated along the second direction is defined as △L2=d2*V2, wherein d2 represents the piezoelectric strain coefficient of the second material layer, and V2 is the magnitude of the applied first voltage.

[0011] Furthermore, in some other embodiments, a third direction is included, and the length of the micro-nano structure in the third direction increases or decreases, and the third direction is parallel to the first material layer and perpendicular to the first direction.

[0012] In some embodiments, the first material layer is piezoelectric ceramic; the insulating layer is SiO2, Si3N4, etc.

[0013] In some other embodiments, the thickness of the second metal layer is ≥ the thickness of the second material layer * etching selectivity ratio 1, etching selectivity ratio 1 = etching rate of the second metal layer / etching rate of the second material layer; the thickness of the photoresist layer is ≥ the thickness of the second metal layer * etching selectivity ratio 2, etching selectivity ratio 2 = etching rate of the photoresist layer / etching rate of the second metal layer.

[0014] Furthermore, the optical structure is a diffraction optical structure, including a one-dimensional grating structure, and / or a two-dimensional grating structure, and / or a DOE, and / or a diffuser.

[0015] The second material layer includes gallium nitride (GaN) or zinc oxide (ZnO).

[0016] The thickness of the insulating layer is 50 to 200 nm; the thickness of the first metal layer is greater than 50 nm; and the thickness of the second material layer is 20 to 200 nm.

[0017] The utility model provides an adjustable imprint master to change the micro-nano structure of a local area of the master to meet different design ID requirements, realize the adjustment of the period, duty cycle and height of the micro-nano structure within a certain range, improve the applicability and utilization rate of the master, shorten the design iteration cycle, and save production costs.

[0018] Furthermore, based on the adjustable imprinting master prepared in the steps of the present invention, the parameters of the micro-nano structures at different positions can be controlled respectively based on the first material layer, the first metal layer and the second metal layer and the first voltage and the second voltage at different positions, thereby realizing the modulation of the period, duty cycle, width and other parameters of the micro-nano structure. According to different design IDs, different first voltages and second voltages are determined based on the required parameters, and their different position voltage values are controlled respectively to realize the control of the positions and parameters of multiple micro-nano structures, so that the imprinting master can adapt to the application scenarios when multiple micro-nano structures change, thereby improving the reuse rate of the imprinting master; and the optical structure of the optical product in this field is imprinted and formed by the micro-nano structure, so that the period, duty cycle, width, height and other parameters of the optical structure are all adjustable. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0020] Figure 1 Schematic diagram of the steps in the method for preparing an adjustable imprint master provided by the utility model Figure 1 ;

[0021] Figure 2 Schematic diagram of the steps in the method for preparing an adjustable imprint master provided by the utility model Figure 2 ;

[0022] Figure 3 Schematic diagram of the steps in the method for preparing an adjustable imprint master provided by the utility model Figure 3 ;

[0023] Figure 4 Schematic diagram of the steps in the method for preparing an adjustable imprint master provided by the utility model Figure 4 ;

[0024] Figure 5 Schematic diagram of the steps in the method for preparing an adjustable imprint master provided by the utility model Figure 5 ;

[0025] Figure 6 Schematic diagram of the steps in the method for preparing an adjustable imprint master provided by the utility model Figure 6 ;

[0026] Figure 7 The structure of an adjustable imprint master provided by the utility model under the modulation of the first voltage is shown as follows Figure 1 ;

[0027] Figure 8 Schematic diagram of the optical structure of an adjustable imprint master provided by the present invention under modulation of a first voltage Figure 2 ;

[0028] Figure 9 A schematic diagram of a grating structure of an adjustable imprint master provided by the present invention under modulation of a first voltage;

[0029] Figure 10 A schematic diagram of a grating structure of an adjustable imprint master provided by the present invention under modulation of a second voltage. DETAILED DESCRIPTION

[0030] In order to help those skilled in the art better understand the present invention, the following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0031] Based on the technical problems pointed out in the background technology section, the utility model provides an adjustable imprint master to change the micro-nano structure of the local area of the master to meet different design ID requirements, and realize the adjustment of the period, duty cycle, height and width of the micro-nano structure within a certain range, thereby improving the applicability and utilization rate of the master, shortening the design iteration cycle, saving production costs, and achieving cost reduction and efficiency improvement.

[0032] An adjustable imprint master, such as Figure 6 As shown, a first material layer 10, an insulating layer 20, a first metal layer 30, a second material layer 40 and a second metal layer 50 are arranged in sequence; the second metal layer 50 is patterned to form a micro-nano structure in the second material layer 40, and the micro-nano structure is used to emboss and form an optical structure of an optical product; the micro-nano structure is displaced along a first direction under a first voltage modulation applied to the first material layer 10; and / or the micro-nano structure is displaced along a second direction under a second voltage modulation applied to the first metal layer 30 and the second metal layer 50.

[0033] On the one hand, under the first voltage modulation applied to the first material layer 10 , the micro-nano structure is displaced along the first direction.

[0034] In detail, such as Figures 6 and 7 As shown, Figure 7 As shown, the dotted line in the figure shows Figure 6When the first material layer 10 is applied with a first voltage, the micro-nanostructure can be modulated to generate a displacement of a certain step length along the first direction, so that different micro-nanostructures are separated from the relative position of the micro-nanostructure when the first voltage is not applied. The first direction is defined as the direction in which the incident light propagates along the micro-nanostructure in the first material layer. For example, it can include a direction parallel to the first material, such as including two directions along the micro-nanostructure, such as Figures 6 and 7 The x, y directions shown; for further explanation, such as Figure 7 As shown, when a first voltage is applied to the first material layer 10, the first material layer 10 is deformed a certain distance in a first direction, thereby causing the micro-nanostructure located above the first material layer 10 to undergo a corresponding displacement, causing the position of the micro-nanostructure to deviate from its original position. The first direction is parallel to the first material layer 10 and perpendicular to the optical height, namely the X direction as shown in the figure. In other words, the incident light propagates in a direction parallel to the first material layer 10 and perpendicular to the height of the micro-nanostructure. In this embodiment, the micro-nanostructure only undergoes a displacement change of a certain step size, which can be controlled by controlling the magnitude of the first voltage.

[0035] Furthermore, the step size of the displacement of the micro-nanostructure in the first direction is determined by controlling the magnitude of the first voltage applied in the first direction, depending on the requirements of different imprint masters. Based on different first material layers, the applicable voltage level ranges from mV to kV, such as ±150mV to ±1000V. Depending on the magnitude of the first voltage, the step size of the micro-nanostructure moving away from its original position can be controlled, such as 20nm to 200nm. More specifically, the displacement generated along the first direction is defined as ΔL1 = d1*V1, where d1 represents the piezoelectric strain coefficient of the first material layer and V1 is the magnitude of the applied first voltage. The displacement generated along the second direction is defined as ΔL2 = d2*V2, where d2 represents the piezoelectric strain coefficient of the second material layer and V2 is the magnitude of the applied first voltage.

[0036] In another embodiment, further, Figure 8 As shown, the micro-nanostructure also includes a change in the width direction of the micro-nanostructure along the first direction under the modulation of the first voltage applied to the first material layer 10, so that the width of the micro-nanostructure after the change is greater than the width of the micro-nanostructure before the change, such as the width of the micro-nanostructure increases by 10%, 20%, 30%, 40%, 50% and so on compared with the original width. Based on different design IDs, the size of the width of the micro-nanostructure can be adjusted, and the adjustment of the width of different micro-nanostructures can be achieved by controlling the size of the first voltage; Figure 8 The middle dotted line shows the optical width when the first voltage is not applied. When the first voltage is applied, the optical width becomes larger.

[0037] Of course, in some other embodiments, it also includes controlling the reduction of the width of the micro-nanostructure, such as reducing the width of the micro-nanostructure by 10%, 20%, 30%, 40%, 50%, etc. compared to the original width of the micro-nanostructure, which is controlled based on the properties of the first material layer and is available to those skilled in the art.

[0038] The optical product described in the present application is a diffraction optical element, such as a diffraction grating SRG, which includes a one-dimensional grating structure and / or a two-dimensional grating structure; and the micro-nano structure can be a DOE, and / or a diffuser, etc., which are diffraction micro-nano structures commonly used in the art and determined by a micro-nano imprinting process.

[0039] Figure 7 and Figure 8 Different embodiments are derived from the precise control of the magnitude of the first voltage, which can control the magnitude of the first voltage, change the position of the micro-nanostructure relative to its original position, and / or change the size of the micro-nanostructure, such as parameters such as width and length, which is feasible.

[0040] Furthermore, for each of the above embodiments, the following is also included: Figure 9 As shown in a and b, the changes of the micro-nano structure are further described in detail. As an example, taking the diffraction grating as an example, the figure shows a one-dimensional grating and a two-dimensional grating structure respectively. Of course, according to Figure 9 The structure shown in the figure can also be understood as a common optical micro-nano device in the field, such as a micro-nano wire grid, a microlens array, a DOE, a diffuser, etc. For ease of understanding, the embodiment of the present application takes a diffraction grating as an example for further explanation, that is, a one-dimensional grating and a two-dimensional grating in the field. The dotted line in the figure shows the size of the grating structure or the position of the grating structure when the first voltage is not applied. For the one-dimensional grating and the two-dimensional grating structure, it also includes controlling the size of the first voltage applied to the first material layer 10, so that the first material layer 10 is stretched in the third direction, thereby driving the grating structure to be stretched in the third direction to produce a certain step displacement, such as Figure 9 The grating structure shown in a and b is stretched to produce a certain step displacement to adjust the length of the grating structure in the third direction; the third direction is defined as a direction parallel to the first material layer and perpendicular to the first direction.

[0041] Furthermore, in combination with the above-mentioned various embodiments, Figure 9As shown in c and d, the grating structure can simultaneously realize displacement of being stretched in a certain step length in the first direction and the third direction under the action of the first voltage of the first material layer 10. The figure shows a schematic diagram of the situation in which the width in the first direction and the length in the third direction are changed simultaneously for different one-dimensional grating and two-dimensional grating structures; of course, the figure only shows the schematic situation in which the width in the first direction and the length in the third direction are stretched to increase the width and length of the grating; further, it can be known that it also includes the situation in which the width in the first direction and the length in the third direction are compressed to reduce the width and length of the grating.

[0042] Figure 9 The grating structure shown in the figure is only a schematic diagram of one-dimensional grating and two-dimensional grating structures, and does not limit the specific structure of one-dimensional grating and two-dimensional grating. For example, grating structures of other shapes, such as blazed gratings, slanted gratings, straight gratings, etc., or gratings with diamond or arc structures, are not limited to the specific structures of the present invention.

[0043] In the present invention, the first material layer is selected from piezoelectric ceramics (PZT) to achieve different deformations under different voltages, thereby driving the change of the grating structure; the insulating layer is used to isolate adjacent conductive layers to achieve conductive control of different material layers, and can be selected from SiO2, Si3N4 or other insulating materials with the same function. This utility model does not limit this.

[0044] On the other hand, the micro-nano structure is displaced along the second direction under the second voltage modulation applied to the first metal layer 30 and the second metal layer 50. The second direction is a direction along the height of the micro-nano structure and away from the first material layer 10, that is, the second direction is a direction perpendicular to the first material layer 10, such as Figure 6 As shown, that is, the Z-axis direction. Figure 6 ,like Figure 10 As shown, the dotted line in the figure is the size of the micro-nano structure when the second voltage is not applied, that is, Figure 6 The size of the micro-nano structure shown in , when a second voltage is applied in the second direction, under the modulation of the second voltage, the grating structure generates a displacement of a certain step length in the second direction, as shown in Figure 10 As shown, the height of the micro-nano structure becomes larger, such as the height of the micro-nano structure increases by 10%, 20%, 30%, 40%, 50%, etc. compared to the original height.

[0045] Based on the adjustable ground, the magnitude of the second voltage is limited to mV to V, such as ±150mV to ±10V, so as to achieve precise control of the height of the micro-nano structure.

[0046] Figure 10Only a schematic diagram of the increase in optical height under the action of the second voltage is shown. It can be seen that based on the different properties of the optical material or the different control methods of the selected voltage, the height of the micro-nano structure can be reduced. It is known that the limitation of the width or length in the present invention includes both increase and decrease.

[0047] Of course, in some other embodiments, the first and second voltages can act together to modulate parameters such as the width, length, and height of the micro-nanostructure in the first, second, and third directions, adjusting the width, length, and height of the micro-nanostructure in different imprint masters to achieve changes in the period, duty cycle, and height of the micro-nanostructure. Based on different design ID requirements, the magnitude of the voltage in different directions can be controlled to achieve modulation of different parameters. Thus, the period, duty cycle, and height of the micro-nanostructure can be adjusted within a certain range, thereby improving the utilization rate of the imprint master, shortening the design iteration cycle, saving production costs, and achieving cost reduction and efficiency improvement.

[0048] In any of the above embodiments, the first material layer 10 is selected from piezoelectric ceramics (PZT), such as lead zirconate titanate, to achieve different deformations under different voltages, thereby driving changes in the micro-nanostructure. The relevant parameters of the piezoelectric ceramics (PZT) are as follows:

[0049] Relative dielectric constant εref: 5400; loss factor: 200×10 -4 ; Coupling factor: K p =0.62, K 31 =0.34,K 33 =0.68;

[0050] Pressure point coefficient: d 31 =-290pm / v,d 33 =+635pm / V;

[0051] Elastic compliance constant: S 33 E =18.1×10 -12 m 2 / N,S11 E =14.8×10 -12 m 2 / N

[0052] Frequency constant: radial = 2040 m / sec, thickness = 1800 m / sec, transverse = 1410 m / sec, longitudinal = 1370 m / sec;

[0053] Quality factor (resonance): 70;

[0054] Density:8g / cm 3 ; In-office temperature: 150℃;

[0055] Specific heat: 380Ws / °Kkg;

[0056] Thermal conductivity: ca.1.5Ws / m·K (axial direction)

[0057] Thermal expansion coefficient: about -5ppm / ℃ (axial); about +5ppm / ℃ (lateral)

[0058] Of course, the above parameters will change significantly with changes in the operating electric field.

[0059] The insulating layer 20 is used to isolate adjacent conductive layers to achieve conductivity control of different material layers, and can be selected from, for example, SiO2; the first metal layer 30 can be selected from, for example, silver (Ag), gold (Au), copper (Cu), aluminum (Al), and titanium (Ti); the second material layer 40 can be selected from, for example, gallium nitride (GaN) and zinc oxide (ZnO); the second metal layer 50 can be selected from, for example, SiO2; the second metal layer 50 can be selected from, for example, silver (Ag), gold (Au), copper (Cu), aluminum (Al), and titanium (Ti), and can be the same as or different from the material of the first metal layer. This utility model does not make specific and detailed limitations on this.

[0060] Furthermore, the thickness of the insulating layer is 50 to 200 nm; the thickness of the first metal layer is greater than 50 nm; the thickness of the second material layer is 20 to 200 nm, or even 200 nm to 300 nm, that is, the thickness of the second material layer is limited to 20 nm to 300 nm to adapt to different micro-nano structure height requirements; the thickness of the second metal layer ≥ the thickness of the second material layer * the etching selectivity ratio of one, the etching selectivity ratio of one = the etching rate of the second metal layer / the etching rate of the second material layer.

[0061] In the present application, the utility model defines the thickness of the second metal layer 50 as ≥ the thickness of the second material layer * the etching selectivity ratio of one, where the etching selectivity ratio of one = the etching rate of the second metal layer / the etching rate of the second material layer;

[0062] The thickness of the photoresist layer 60 is greater than or equal to the thickness of the second metal layer * the etching selectivity ratio 2, where the etching selectivity ratio 2 = the etching rate of the photoresist layer / the etching rate of the second metal layer;

[0063] In the present application, electrode sheets are also provided at both ends of the first material layer 10 and electrically connected to each other, and the deformation displacement of the first material layer 10 in the first direction and the third direction is achieved by controlling the voltage.

[0064] Furthermore, the voltage is set and controlled at both ends of the first metal layer 30 and the second metal layer 50, that is, at both ends of the grating structure, so that the height of the micro-nano structure layer increases or decreases, such as Figure 6 shown.

[0065] Based on the adjustable imprint master prepared in the steps of the present invention, the parameters of the micro-nano structures at different positions can be controlled based on the first material layer, the first metal layer, and the second metal layer, so as to realize the modulation of the period, duty cycle, width and other parameters of the micro-nano structures. According to different design IDs, different first voltages and second voltages are determined, and their different positions are controlled respectively to adapt to application scenarios when multiple micro-nano structures change.

[0066] The above specific embodiments do not limit the scope of protection of this utility model. Those skilled in the art will appreciate that various modifications, combinations, sub-combinations, and substitutions may be made based on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model shall be included within the scope of protection of this utility model.

Claims

1. An adjustable imprint master, characterized in that: The optical structure of the optical product is formed by embossing the optical structure of the optical product. The micro-nanostructure is displaced along a first direction under a first voltage modulation of the first material layer; and / or the micro-nanostructure is displaced along a second direction under a second voltage modulation of the first metal layer and the second metal layer.

2. The adjustable imprint master according to claim 1, characterized in that: The first direction is the direction in which the incident light propagates along the micro-nanostructure and in the first material layer; the second direction is the direction along the height of the micro-nanostructure and away from the first material layer, and the width of the micro-nanostructure in the first direction increases or decreases; and / or; the height of the micro-nanostructure in the second direction increases or decreases.

3. The adjustable imprint master according to any one of claims 1 to 2, characterized in that: The displacement generated along the first direction △L1=d1*V1, where d1 represents the piezoelectric strain coefficient of the first material layer, and V1 is the magnitude of the applied first voltage; the displacement generated along the second direction △L2=d2*V2, where d2 represents the piezoelectric strain coefficient of the second material layer, and V2 is the magnitude of the applied second voltage.

4. The adjustable imprint master according to any one of claims 1 to 2, characterized in that: A third direction is also included, and the length of the micro-nano structure increases or decreases in the third direction. The third direction is parallel to the first material layer and perpendicular to the first direction.

5. The adjustable imprint master according to claim 4, characterized in that: The first material layer is piezoelectric ceramic; the insulating layer is SiO2 or Si3N4.

6. The adjustable imprint master according to claim 4, characterized in that: The thickness of the second metal layer is ≥ the thickness of the second material layer * etching selectivity ratio 1, where etching selectivity ratio 1 = etching rate of the second metal layer / etching rate of the second material layer; the thickness of the photoresist layer is ≥ the thickness of the second metal layer * etching selectivity ratio 2, where etching selectivity ratio 2 = etching rate of the photoresist layer / etching rate of the second metal layer.

7. The adjustable imprint master according to claim 6, characterized in that: The second material layer includes gallium nitride (GaN) or zinc oxide (ZnO).

8. The adjustable imprint master according to claim 6, characterized in that: The displacement ranges from 2 nm to 200 nm.

9. The adjustable imprint master according to claim 6, characterized in that: The thickness of the insulating layer is 50-200 nm; the thickness of the first metal layer is greater than 50 nm; and the thickness of the second material layer is 20-200 nm.

10. The adjustable imprint master according to claim 6, characterized in that: The optical structure is a diffractive optical structure, and the diffractive optical structure may be a one-dimensional grating structure and / or a two-dimensional grating structure; or the diffractive optical structure is a DOE or a diffuser.

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