Filament, electronic spraying device and ion implantation equipment

Abstract

The utility model relates to the technical field of semiconductors, and provides a lamp filament, an electronic spraying device and ion implantation equipment, the lamp filament comprises a first connecting part, a second connecting part and a bending part; the bending part is formed by bending a single filament body in a reciprocating manner, and the center lines of the filament bodies of the bending part are positioned in the same reference plane; one end of the bending part is connected with the first connecting part, and the other end of the bending part is connected with the second connecting part. According to the configuration, the bending part adopts a reciprocating bending structure, so that the effective length of the bending part is increased, the lamp filament can operate under the working conditions of low current and low power, the consumption time of the lamp filament is prolonged, and the service life of the lamp filament is prolonged.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a filament, an electron spraying device and ion implantation equipment. Background Art

[0002] Ion implantation is a crucial doping technique in modern integrated circuit manufacturing. It uses ion implantation equipment to accelerate ions and inject dopant elements into semiconductor wafers, altering their conductive properties and ultimately forming the desired device structure. Ion implantation equipment typically consists of an ion source, ion extraction and mass analyzer, an accelerator tube, a scanning system, a process chamber, and a high-vacuum system. The high-vacuum system creates a negative pressure environment in the process chamber. The ion source generates an ion beam, which is separated by ion extraction and mass analyzer. The ion beam is then accelerated by the accelerator tube and enters the process chamber to bombard the wafer surface, achieving ion implantation.

[0003] In the ion implantation process, since a positively charged ion beam is used to implant the wafer, the doping ion beam will generate charge accumulation on the wafer surface. This charge accumulation can lead to hazards such as uneven doping and gate oxide breakdown. Therefore, the ion beam usually needs to be neutralized in the ion implantation machine.

[0004] The existing method involves injecting electrons into the process chamber through an electron spray device. Attracted by the positive potential of the ion beam, the electrons dissolve into the ion beam and neutralize it. The electron spray device uses a filament to generate hot electrons, which collide with xenon gas to dissociate more hot electrons, neutralizing the positive ion beam. Existing filaments are typically U-shaped, which can become thinner and more susceptible to breaking due to wear and tear. This results in a short service life and requires frequent downtime for replacement.

[0005] Therefore, based on the above technical problems, there is a need for a filament, an electron spray device and an ion implantation device, which can extend the life of the filament and reduce its replacement frequency by improving the filament. Utility Model Content

[0006] The purpose of the utility model is to provide a filament, an electronic spraying device and an ion implantation device, which can prolong the life of the filament and reduce the replacement frequency of the filament by improving the filament.

[0007] The utility model provides a filament, comprising: a first connecting portion, a second connecting portion and a bending portion;

[0008] The bending portion is formed by bending a single filament back and forth, and the center lines of the filaments of the bending portion are located in the same reference plane;

[0009] One end of the bent portion is connected to the first connecting portion, and the other end of the bent portion is connected to the second connecting portion.

[0010] Optionally, the first connection portion and the second connection portion are arranged at an angle to the reference plane; and / or the first connection portion and the second connection portion are parallel.

[0011] Optionally, the first connecting portion and the second connecting portion are perpendicular to the reference plane.

[0012] Optionally, along a direction perpendicular to the reference plane, the first connecting portion and the second connecting portion are located on the same side of the reference plane.

[0013] Optionally, the first connecting portion, the second connecting portion and the bending portion are formed by bending a single wire.

[0014] Optionally, the bending portion includes a plurality of straight wires and a plurality of curved wires arranged in parallel, each of the straight wires extends along a first direction, and the positive end of each straight wire along the first direction serves as the first end, and the negative end along the first direction serves as the second end. The first end of each straight wire is connected through a portion of the curved wire, and the second end of each straight wire is connected through another portion of the curved wire, and the first direction is parallel to the reference plane.

[0015] Optionally, the straight wire includes a first straight wire, a second straight wire, a third straight wire, a fourth straight wire, and a fifth straight wire arranged in sequence along a second direction; the curved wire includes a first curved wire, a second curved wire, a third curved wire, and a fourth curved wire, and the second direction is parallel to the reference plane and perpendicular to the first direction;

[0016] The first end of the second straight wire is connected to the first end of the third straight wire through the first curved wire;

[0017] The first end of the first straight wire is connected to the first end of the fourth straight wire through the second curved wire;

[0018] The second end of the third straight wire is connected to the second end of the fourth straight wire through the third curved wire;

[0019] The second end of the second straight wire is connected to the second end of the fifth straight wire through the fourth curved wire;

[0020] The first connecting portion is connected to the first end of the fifth linear filament;

[0021] The second connecting portion is connected to the second end of the first linear wire.

[0022] Optionally, the first curved filament is bent in a direction away from the first end of the second straight filament and away from the first end of the third straight filament;

[0023] The second curved filament is bent in a direction away from the first end of the first straight filament and the first end of the fourth straight filament, the bending radius of the second curved filament is greater than the bending radius of the first curved filament, and the second curved filament surrounds the first curved filament;

[0024] and / or;

[0025] The third curved filament is bent in a direction away from the second end of the third straight filament and away from the second end of the fourth straight filament;

[0026] The fourth curved filament is bent in a direction away from the second end of the second straight filament and the second end of the fifth straight filament. The bending radius of the fourth curved filament is greater than the bending radius of the third curved filament, and the fourth curved filament surrounds the third curved filament.

[0027] The utility model also provides an electronic spraying device, which is equipped with the above-mentioned filament.

[0028] The utility model also provides an ion implantation device, which is equipped with the above-mentioned electronic spraying device.

[0029] In the present invention, the bending portion adopts a reciprocating bending structure, and its effective length is lengthened. When the material and diameter of the filament remain unchanged, appropriately extending the filament length can enable the filament to use a lower current to generate the same amount of thermal electrons. Therefore, by extending the effective length of the main part of the filament that generates electrons (the bending portion), the filament can be operated under low current and low power conditions, which helps to extend the consumption time of the filament and extend its service life.

[0030] The main part (bend) of the filament that generates electrons is a flat disc-shaped structure. Compared with the existing U-shaped filament, the main part (bend) of the filament in the present invention is an overall flat disc-shaped structure without any local protrusions. This ensures that the electrons generated by the bend are evenly consumed, preventing the phenomenon of localized excessive consumption due to local protrusions, further extending the consumption time of the filament and its service life. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 This is a schematic structural diagram of a filament according to an embodiment of the present invention.

[0032] Among them, in the accompanying drawings:

[0033] 10- first connecting portion;

[0034] 20- second connecting portion;

[0035] 30-bending portion; 31-first straight filament; 32-second straight filament; 33-third straight filament; 34-fourth straight filament; 35-fifth straight filament; 36-first curved filament; 37-second curved filament; 38-third curved filament; 39-fourth curved filament;

[0036] A-datum plane;

[0037] a-first direction; b-second direction. DETAILED DESCRIPTION

[0038] The following is a detailed description of the filament provided by the present invention, with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are greatly simplified and not to exact scale, and are intended solely to facilitate and clarify the description of the embodiments of the present invention.

[0039] As used in the present invention, the singular forms "a", "an", and "the" include plural objects, the term "or" is generally used to include the meaning of "and / or", the term "several" is generally used to include the meaning of "at least one", and the terms "at least two" or "a plurality" are generally used to include the meaning of "two or more". In addition, the terms "first", "second", and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features specified as "first", "second", and "third" may explicitly or implicitly include one or at least two of the features. In addition, as used in the present invention, "installed", "connected", "connected", and one element is "set" on another element should be understood in a broad sense, usually only indicating that there is a connection, coupling, cooperation or transmission relationship between the two elements, and the connection, coupling, cooperation or transmission between the two elements can be direct or indirect through an intermediate element, and cannot be understood as indicating or implying the spatial position relationship between the two elements, that is, one element can be in any orientation such as inside, outside, above, below or on one side of another element, unless the content clearly indicates otherwise. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. In addition, directional terms such as above, below, up, down, upward, downward, left, right, etc. are used relative to the exemplary embodiments as they are shown in the figures, with the upward or upper direction toward the top of the corresponding figure, and the downward or lower direction toward the bottom of the corresponding figure.

[0040] This embodiment provides a filament, comprising: a first connecting portion 10, a second connecting portion 20, and a bending portion 30;

[0041] The bending portion 30 is formed by bending a single filament back and forth. Furthermore, the entire filament is formed by bending a single filament, i.e., the first connecting portion 10, the second connecting portion 20, and the bending portion 30 are formed by bending a single filament. In other words, the first connecting portion 10, the second connecting portion 20, and the bending portion 30 are integrally formed. By bending a single filament, the overall consistency of the filament is improved.

[0042] The wire is made of metal, and its specific material can be selected based on actual usage requirements. For example, it can be pure rhenium wire.

[0043] like Figure 1 As shown, the bent portion 30 is formed by a single filament that is bent back and forth, with the centerlines of the filaments of the bent portion 30 lying within the same reference plane A. In other words, the bent portion 30 as a whole has a flat, disc-shaped structure, rather than a three-dimensional structure. The bent portion 30, which serves as the main electron generator, has a reciprocating bending structure that helps extend the effective length of the electron-generating main portion of the filament while maintaining the original filament diameter.

[0044] According to the heat formula: Q = I 2 ·R·t;

[0045] According to the resistance formula: R = ρ·L· / S;

[0046] It can be seen that Q=(ρ·L·I 2 t) / S;

[0047] in:

[0048] Q is the heat generated by the filament;

[0049] I is the current of the filament;

[0050] R is the resistance of the filament;

[0051] t is the filament working time;

[0052] ρ is the material coefficient;

[0053] L is the filament length;

[0054] S is the cross-sectional area of the filament;

[0055] As can be seen from the above formula, if the filament material and diameter remain unchanged, appropriately extending the filament length can enable the filament to generate the same amount of hot electrons using a lower current. Therefore, extending the effective length of the main portion of the filament (the bent portion 30) where electrons are generated allows the filament to operate under low current and low power conditions, helping to prolong the filament's lifespan and extend its service life.

[0056] Furthermore, in this embodiment, the main portion of the filament that generates electrons (bend 30) is a flat, disc-shaped structure. Compared to existing U-shaped filaments, the filament in this embodiment lacks a local protrusion. This ensures that the electrons generated by the bend 30 are evenly consumed, preventing localized over-consumption caused by a protrusion. This further prolongs the filament's consumption time and lifespan.

[0057] Please continue to refer to Figure 1 As shown, one end of the bent portion 30 is connected to the first connecting portion 10, and the other end of the bent portion 30 is connected to the second connecting portion 20. The first connecting portion 10 and the second connecting portion 20 are both linear structures. In a direction perpendicular to a reference plane A, the first connecting portion 10 and the second connecting portion 20 are located on the same side of the reference plane A. The first connecting portion 10 and the second connecting portion 20 are used to connect to electrodes.

[0058] This arrangement ensures that after the filament is installed in the chamber of the electron gun, the bent portion 30 is closer to the ion beam, and the electrons generated by the bent portion 30 are closer to the ion beam, which helps to improve the neutralization effect of the ion beam.

[0059] Furthermore, the first connecting portion 10 and the second connecting portion 20 are arranged at an angle to the reference plane A. Preferably, the first connecting portion 10 and the second connecting portion 20 are perpendicular to the reference plane A. In this case, the first connecting portion 10 and the second connecting portion 20 are arranged in parallel. This arrangement facilitates the installation of the filament.

[0060] Please refer to Figure 1 As shown, the first connecting portion 10 and the second connecting portion 20 extend horizontally and are arranged at the same height to adapt to the chamber of an existing electron gun.

[0061] The specific structure of the bent portion 30 of the filament will be described in detail below.

[0062] In this embodiment, the first direction a is parallel to the reference plane A, and the second direction b is parallel to the reference plane A and perpendicular to the first direction a.

[0063] The bending portion 30 includes a plurality of parallel straight wires and a plurality of curved wires, each of which extends along a first direction a, and each of which has a positive end along the first direction a as a first end and a negative end along the first direction a as a second end. Figure 1 In the embodiment, the positive direction of the first direction a is the upward direction of the vertical direction, and the reverse direction of the first direction a is the downward direction of the vertical direction, that is, the first end of each linear filament is Figure 1 The upper end of each straight wire is Figure 1 The lower end of the middle.

[0064] In this embodiment, the positive direction and the direction of the first direction a are introduced to clearly define the two ends of the linear wire, which does not limit the specific structure of the linear wire. Figure 1 The first direction a pointing downward is regarded as the positive direction.

[0065] Please continue to combine Figure 1 As shown, Figure 1 The first end of each of the straight wires is connected through a portion of the curved wire, and the second end of each of the straight wires is connected through another portion of the curved wire.

[0066] Thus, through the cooperation of the straight wire and the curved wire, the bending portion 30 forms a structure that bends back and forth up and down.

[0067] In other alternative embodiments, the bending portion 30 may adopt a left-right reciprocating bending, a spiral bending or other bending structures.

[0068] Please continue to refer to Figure 1 As shown, the linear wire includes a first linear wire 31, a second linear wire 32, a third linear wire 33, a fourth linear wire 34 and a fifth linear wire 35 which are sequentially arranged along the second direction b.

[0069] The curved filaments include a first curved filament 36 , a second curved filament 37 , a third curved filament 38 and a fourth curved filament 39 , and each curved filament is in an arc shape.

[0070] The first end of the second linear wire 32 is connected to the first end of the third linear wire 33 through the first curved wire 36; the first curved wire 36 is bent in a direction away from the first end of the second linear wire 32 and the first end of the third linear wire 33 (i.e., at Figure 1 (bend upward in the middle);

[0071] The first end of the first straight wire 31 is connected to the first end of the fourth straight wire 34 through the second curved wire 37; the second curved wire 37 is bent in a direction away from the first end of the first straight wire 31 and the first end of the fourth straight wire 34 (i.e., in the direction of the first curved wire 37). Figure 1 (bend upward in the middle);

[0072] The bending radius of the second curved filament 37 is greater than the bending radius of the first curved filament 36 , and the second curved filament 37 surrounds the first curved filament 36 .

[0073] Similarly, the second end of the third linear wire 33 is connected to the second end of the fourth linear wire 34 through the third curved wire 38; the third curved wire 38 is bent in a direction away from the second end of the third linear wire 33 and the second end of the fourth linear wire 34 (i.e., in a direction away from the second end of the third linear wire 33 and the second end of the fourth linear wire 34). Figure 1 bends downward in the middle);

[0074] The second end of the second straight wire 32 is connected to the second end of the fifth straight wire 35 through the fourth curved wire 39; the fourth curved wire 39 is bent in a direction away from the second end of the second straight wire 32 and the second end of the fifth straight wire 35 (i.e., at Figure 1 bends downward in the middle);

[0075] The bending radius of the fourth curved filament 39 is greater than the bending radius of the third curved filament 38 , and the fourth curved filament 39 surrounds the third curved filament 38 .

[0076] The first connecting portion 10 is connected to the first end of the fifth linear wire 35;

[0077] The second connecting portion 20 is connected to the second end of the first linear wire 31 .

[0078] The above structure enables the bending portion 30 to be bent up and down as a whole and to be combined with a spiral bending structure, which helps to extend the filament length of the bending portion 30 and adapt to the shape of the existing electron gun chamber, and also helps to generate electrons uniformly.

[0079] The overall shape of the aforementioned bent portion 30 is compatible with the existing electron gun chamber structure, facilitating installation within the existing electron gun chamber. Furthermore, the bent portion 30 is configured with five straight filaments and four curved filaments to achieve an optimal shape. This optimal shape not only accommodates the installation space within the existing electron gun chamber but also ensures a long length for the bent portion 30, maximizing its lifespan and extending its service life. It also maintains an appropriate distance between adjacent filaments within the bent portion 30.

[0080] Preferably, the distance between adjacent straight filaments in the first, second, third, fourth, and fifth straight filaments 31, 32, 33, 34, and 35 is the same. The distance between the first and second curved filaments 36, 37 is the same as the distance between adjacent straight filaments. The distance between the third and fourth curved filaments 38, 39 is the same as the distance between adjacent straight filaments. This ensures that the entire winding of the bent portion 30 is more uniform, resulting in uniform electron generation and improved ion beam neutralization.

[0081] This embodiment also provides an electron spray device, which is equipped with the aforementioned filament. The electron spray device is also called an electron gun, and the filament is installed in the electron gun's chamber. The electron spray device uses high-voltage pulse ionization to cause the filament to generate electrons, and uses a magnetic field to cause the electrons to move along a predetermined trajectory. The electron spray device uses existing structures, differing only in the replacement of the filament, which will not be further described here.

[0082] In this embodiment, an ion implantation device is further provided, and the ion implantation device is equipped with the above-mentioned electron spraying device.

[0083] Ion implantation equipment includes an ion source, ion extraction and mass analyzer, an accelerator tube, a scanning system, a process chamber, and a high-vacuum system. The process chamber is equipped with a placement position for wafers, where the wafers to be doped are placed. The high-vacuum system is used to create a negative pressure environment in the process chamber. The ion source generates an ion beam and separates impurity ions through ion extraction and a mass analyzer. The ion beam is then accelerated by the accelerator tube and enters the process chamber to bombard the wafer surface, achieving ion implantation. All components of the above-mentioned ion implantation equipment can be consistent with existing equipment.

[0084] The electron spray device is used to neutralize the positively charged ion beam and prevent the electrons from being attracted by the wafer surface and causing over-neutralization, thereby improving the uneven charge distribution on the wafer surface.

[0085] The electron spray device is mounted on the outer wall of the process chamber of the ion implantation equipment. The sidewall of the process chamber has an opening that serves as an electron emission port for the electron spray device. The electron emission port is connected to the process chamber, allowing electrons generated by the electron spray device to enter the process chamber through the electron emission port and neutralize the ion beam.

[0086] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0087] The above description is only a description of the preferred embodiment of the present invention and does not limit the scope of the present invention. Any changes and modifications made by ordinary technicians in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.

Claims

1. A filament, characterized in that: include: a first connecting portion, a second connecting portion, and a bending portion; The bending portion is formed by bending a single filament back and forth, and the center lines of the filaments of the bending portion are located in the same reference plane; One end of the bent portion is connected to the first connecting portion, and the other end of the bent portion is connected to the second connecting portion.

2. The filament according to claim 1, wherein The first connection portion and the second connection portion are arranged at an angle to the reference plane; and / or the first connection portion and the second connection portion are parallel.

3. The filament according to claim 2, wherein The first connecting portion and the second connecting portion are perpendicular to the reference plane.

4. The filament according to claim 1, wherein In a direction perpendicular to the reference plane, the first connection portion and the second connection portion are located on the same side of the reference plane.

5. The filament according to claim 1, wherein The first connecting portion, the second connecting portion and the bending portion are formed by bending a wire.

6. The filament according to claim 1, wherein The bending portion includes a plurality of linear filaments and a plurality of curved filaments arranged in parallel, each of the linear filaments extending along a first direction, with an end of each linear filament along the positive direction of the first direction serving as a first end and an end of each linear filament along the negative direction of the first direction serving as a second end. The first end of each linear filament is connected by a portion of the curved filament, and the second end of each linear filament is connected by another portion of the curved filament. The first direction is parallel to the reference plane.

7. The filament according to claim 6, wherein The straight wire includes a first straight wire, a second straight wire, a third straight wire, a fourth straight wire and a fifth straight wire arranged in sequence along a second direction; the curved wire includes a first curved wire, a second curved wire, a third curved wire and a fourth curved wire, and the second direction is parallel to the reference plane and perpendicular to the first direction; The first end of the second straight wire is connected to the first end of the third straight wire through the first curved wire; The first end of the first straight wire is connected to the first end of the fourth straight wire through the second curved wire; The second end of the third straight wire is connected to the second end of the fourth straight wire through the third curved wire; The second end of the second straight wire is connected to the second end of the fifth straight wire through the fourth curved wire; The first connecting portion is connected to the first end of the fifth linear filament; The second connecting portion is connected to the second end of the first linear wire.

8. The filament according to claim 7, wherein The first curved filament is bent in a direction away from the first end of the second straight filament and away from the first end of the third straight filament; The second curved filament is bent in a direction away from the first end of the first straight filament and the first end of the fourth straight filament, the bending radius of the second curved filament is greater than the bending radius of the first curved filament, and the second curved filament surrounds the first curved filament; and / or; The third curved filament is bent in a direction away from the second end of the third straight filament and away from the second end of the fourth straight filament; The fourth curved filament is bent in a direction away from the second end of the second straight filament and the second end of the fifth straight filament. The bending radius of the fourth curved filament is greater than the bending radius of the third curved filament, and the fourth curved filament surrounds the third curved filament.

9. An electronic spray device, characterized in that: The electronic spray device is equipped with the filament according to any one of claims 1 to 8.

10. An ion implantation device, characterized in that: The ion implantation equipment is equipped with the electron spray device according to claim 9.

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