Magnetron sputtering target material and magnetron sputtering device

Abstract

The embodiment of the utility model provides a magnetron sputtering target material and a magnetron sputtering device, and relates to the technical field of magnetron sputtering. The magnetron sputtering target material comprises a supporting piece and a target material body, wherein the supporting piece extends along a first direction; the target material body is wound on the radial peripheral side of the supporting piece; the radial direction is perpendicular to the first direction; the target material body comprises a basic section, two transition sections and two thinning sections which are arranged in the first direction. The two transition sections are arranged on the two sides of the foundation section correspondingly, and the two thinning sections are correspondingly arranged on the sides, away from the foundation section, of the transition sections correspondingly. The minimum radial thickness of the transition section is larger than the radial thickness of the base section, and the maximum radial thickness of the thinning section is smaller than the maximum radial thickness of the transition section. According to the magnetron sputtering target material, the thinning section is arranged, and the maximum radial thickness of the thinning section is smaller than the maximum radial thickness of the transition section, so that the etching difficulty of the thinning section is reduced, normal etching can be achieved, and the material utilization rate of the target material body is increased.

Description

Technical Field

[0001] The present application relates to the technical field of magnetron sputtering, and in particular to a magnetron sputtering target and a magnetron sputtering device. Background Art

[0002] A magnetron sputtering target typically consists of a support and a target body wound around the support. During the physical vapor deposition (PVD) process, sputtered ions bombard the surface of the target body under the action of magnetic and electric fields to etch the target body and obtain target atoms. Driven by an external electric field, the target atoms are directionally deposited on the surface of the substrate to be deposited to form a thin film.

[0003] However, due to the characteristics of the physical vapor deposition process, the magnetic field and electric field formed therein have weak coverage on the middle area of the target body, and are prone to unpredictable distortion and adverse effects of equipment shielding in the areas near the edges of the target body. This results in large differences in the material etching rates in different areas of the target body, and the materials in the edge areas at both ends are difficult to be effectively etched, which affects the etching uniformity, and may in turn affect the uniformity of the obtained thin film, as well as reduce the material utilization rate of the target body and cause material waste. Utility Model Content

[0004] The present application provides a magnetron sputtering target and a magnetron sputtering device, which are used to effectively alleviate the problem that during the physical vapor deposition process, the material etching rates of different areas of the target body vary greatly, thereby resulting in low utilization of the target body material and affecting the uniformity of the obtained thin film.

[0005] In a first aspect, an embodiment of the present application provides a magnetron sputtering target, comprising a support member extending along a first direction; a target body, the target body being disposed radially around the support member; and the radial direction being perpendicular to the first direction. The target body comprises a base segment, two transition segments, and two thinning segments arranged along the first direction; the two transition segments are disposed on either side of the base segment, and the two thinning segments are disposed on a side of each transition segment facing away from the base segment; the radial thickness of the transition segments and the thinning segments gradually changes along the first direction, while the radial thickness of the base segment remains constant along the first direction; the minimum radial thickness of the transition segment is greater than the radial thickness of the base segment, and the maximum radial thickness of the thinning segment is less than the maximum radial thickness of the transition segment.

[0006] In a possible implementation manner, the axial length ratio of the base section, the transition section, and the thinning section includes: (8-10): (2-4):1.

[0007] In a possible implementation manner, the radial thickness of the thinned section gradually decreases in a direction away from the base section.

[0008] In a possible embodiment, the radial thickness of the thinned segment changes continuously in a direction away from the base segment, and the rate of change continuously increases or continuously decreases.

[0009] In a possible implementation manner, the maximum radial thickness of the thinned section is less than 10.5 mm.

[0010] In a possible implementation manner, the axial length of the thinned section is 1 cm to 3 cm.

[0011] In a possible implementation manner, the radial thickness of the transition section gradually increases in a direction away from the base section.

[0012] In a possible implementation manner, the radial thickness of the transition section changes continuously in a direction away from the base section, and the rate of change continuously increases or continuously decreases.

[0013] In a possible implementation manner, the radial thickness of the transition section ranges from 9 cm to 10.5 cm.

[0014] In a second aspect, an embodiment of the present application provides a magnetron sputtering device, comprising a target holder and any one of the magnetron sputtering targets provided in the first aspect, which is arranged on the target holder.

[0015] The magnetron sputtering target and magnetron sputtering device provided in the present application are characterized in that the magnetron sputtering target is provided with a support member and a target body, the support member extends along a first direction, the base section, two transition sections and two thinning sections of the target body are arranged along the first direction and are all arranged around the radial circumference of the support member, and the radial direction is perpendicular to the first direction. The support member can support the base section, two transition sections and two thinning sections. By setting the radial thickness of the transition section and the thinning section to gradually change along the first direction, the radial thickness of the base section is kept constant along the first direction, and the minimum radial thickness of the transition section is set to be greater than the radial thickness of the base section, so that the area with weaker magnetic field and electric field coverage is matched with the base section with a smaller radial thickness, the base section can compensate for the slower etching rate of the target body material in this section during the physical vapor deposition process, and the area with stronger magnetic field and electric field coverage is matched with the transition section with a larger radial thickness, the transition section can compensate for the faster etching rate of the target body material in this section during the physical vapor deposition process, thereby ensuring that the etching time required for the base section and the transition section are consistent, thereby avoiding the situation where the transition section is exhausted prematurely while a large amount of the base section is still left. By setting the maximum radial thickness of the thinning section to be smaller than the maximum radial thickness of the transition section, the thinning section can match the adverse effects of the magnetic and electric field distortion and equipment shielding effect near the two ends of the target body during the physical vapor deposition process, so that the material etching difficulty of the thinning section is reduced, so that the thinning sections located at the edge areas of the two ends of the target body can be etched normally, and the etching time required for the base section, transition section and thinning section is consistent, thereby improving the etching uniformity. In this way, the magnetron sputtering target material provided by the present application effectively alleviates the problem of large differences in material etching rates in different areas of the target body in the related art, thereby improving material utilization and ensuring the uniformity of the obtained thin film. In addition, the frequency of replacing the target body during the production process is reduced, the downtime is reduced, and thus production efficiency is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings herein are incorporated in and constitute a part of the specification, illustrate embodiments consistent with the present application, and together with the description, are used to explain the principles of the embodiments of the present application.

[0017] Figure 1 A schematic structural diagram of a magnetron sputtering device provided in some embodiments of the present application;

[0018] Figure 2 A schematic structural diagram of a magnetron sputtering target provided in some embodiments of the present application;

[0019] Figure 3 A schematic structural diagram of another magnetron sputtering target provided in some embodiments of the present application;

[0020] Figure 4 for Figure 3 A schematic structural diagram of a magnetron sputtering target material obtained after sputtering is provided.

[0021] Description of reference numerals:

[0022] 10 - magnetron sputtering target; 20 - target holder; 30 - sputtering chamber; 40 - electric field applicator; 50 - magnetic field applicator; 60 - substrate carrier; 70 - substrate to be deposited;

[0023] 100-support member;

[0024] 200-target body; 210-base section; 220-transition section; 230-thinning section; 240-thickening section;

[0025] H1- radial thickness of the base segment; H2- radial thickness of the transition segment; H3- radial thickness of the thinning segment; W1- axial length of the base segment; W2- axial length of the transition segment; W3- axial length of the thinning segment;

[0026] X-first direction; Z-radial direction.

[0027] To facilitate understanding of the solutions of the embodiments of the present application, the spline curves and arrows used in the drawings are explained here: the components indicated by the spline curves without arrows are solid components, that is, components with solid structures; the components indicated by the spline curves with arrows are virtual components, that is, components without solid structures.

[0028] The above drawings illustrate specific embodiments of the present application, which will be described in more detail below. These drawings and textual descriptions are not intended to limit the scope of the embodiments of the present application in any way, but rather to illustrate the concepts of the present application for those skilled in the art by reference to specific embodiments. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application.

[0030] It should be noted that, in this article, relational terms such as first and second are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. In the description of the embodiments of the present application, it should be understood that the orientation or positional relationship (if any) indicated by the terms "center", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" etc. is based on the orientation or positional relationship shown in the accompanying drawings, only for the convenience of describing the embodiments of the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a restriction on the embodiments of the present application. Moreover, the term "comprise", "include" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those elements, but also includes other elements not clearly listed, or also includes elements inherent to such process, method, article or equipment. In the absence of further restrictions, the elements defined by the phrase "comprising..." do not preclude the presence of other identical elements in the process, method, article, or device that includes the elements. The embodiments of the present application and the various features therein may be combined with each other if there is no conflict, and all are within the scope of protection of the present application.

[0031] See also Figure 1 Some embodiments of the present application provide a magnetron sputtering device, including a magnetron sputtering target 10 and a target holder 20 suitable for installing and fixing the magnetron sputtering target 10. The target holder 20 can position and support the magnetron sputtering target 10.

[0032] This embodiment does not limit the specific structure of the target support 20 , as long as it can stably support the magnetron sputtering target 10 .

[0033] In some embodiments, the magnetron sputtering device also includes: a sputtering chamber 30, the target material holder 20 and the magnetron sputtering target 10 are both arranged in the sputtering chamber 30; an electric field applicator 40, the electric field applicator 40 is arranged in the sputtering chamber 30, the electric field applicator 40 is located on one side of the magnetron sputtering target 10, and the electric field applicator 40 is used to provide an electric field so that the electric field covers the magnetron sputtering target 10; a magnetic field applicator 50, the magnetic field applicator 50 is located on the other side of the magnetron sputtering target 10, and the magnetic field applicator 50 is used to provide a magnetic field so that the magnetic field covers the magnetron sputtering target 10.

[0034] The sputtering chamber 30 provides a closed, controllable environment and is the core container of the entire magnetron sputtering process. Within the sputtering chamber 30, parameters such as gas pressure and gas composition can be precisely controlled to create ideal conditions for the sputtering process.

[0035] The sputtering chamber 30 also includes a substrate carrier 60 and a substrate to be deposited 70, and the substrate to be deposited 70 is arranged on the substrate carrier 60. The electric field applicator 40 and the magnetic field applicator 50 are both arranged in the sputtering chamber 30, and the electric field provided by the electric field applicator 40 and the magnetic field provided by the magnetic field applicator 50 both cover the magnetron sputtering target 10. During the physical vapor deposition process, under the superposition of the electric field and the magnetic field, sputtering ions (such as Ar ions) bombard the surface of the target body to etch the target body to obtain target atoms, and the target atoms are directionally deposited on the surface of the substrate to be deposited 70 under the drive of the external electric field to form a thin film. It should be noted that the electric field applicator 40 and the magnetic field applicator 50 are both structural designs already existing in the art and will not be described in detail here.

[0036] By way of example, the electric field provided by the electric field applicator 40 includes an alternating electric field or a constant electric field; by way of example, the magnetic field applicator 50 includes a magnetic field parallel to the target body or a magnetic field intersecting the target body.

[0037] In addition, this embodiment does not limit the specific type of the substrate 70 to be deposited, and can be set according to specific needs. For example, the substrate 70 to be deposited can be a silicon wafer used to prepare a heterojunction battery, or a conductive layer substrate of other electronic devices.

[0038] It is understandable that this embodiment only schematically illustrates some components included in the magnetron sputtering device, and the magnetron sputtering device may also include more or fewer components compared with this embodiment.

[0039] It should be noted that this embodiment does not limit the specific application field of the magnetron sputtering device, and it can be used according to specific needs. For example, the magnetron sputtering device can be applied to semiconductor manufacturing, optical device manufacturing, solar cell manufacturing and other fields.

[0040] Currently, the two ends of the target body are bombarded with stronger ions than the middle, causing it to be quickly depleted and reducing the material utilization of the target body.

[0041] See also Figure 2 Some embodiments of the present application provide a magnetron sputtering target, comprising a support member 100 and a target body 200 disposed around the support member 100. The target body 200 has a thin center and thicker ends. The increased material thickness at the ends can compensate for the faster etching rate in these areas, thereby improving the material utilization of the target body 200. Specifically, the target body 200 includes a base section 210 and thickened sections 240 disposed on both sides of the base section 210. The minimum radial thickness of the thickened sections 240 is greater than the radial thickness of the base section 210.

[0042] However, the inventors of this case have discovered that in some scenarios, the material at the edge regions of the thickened section 240 of the target body 200 is difficult to be effectively etched, resulting in a low material utilization rate of the target body 200. The inventors of this case have discovered that the causes of this problem include, but are not limited to:

[0043] Scenario 1: At the edges of the target body 200, the electric and magnetic fields may be distorted, causing changes in the acceleration and deflection paths of the sputtered ions. This distortion reduces the bombardment energy or density of the sputtered ions, thereby reducing the etching rate.

[0044] Scenario 2: The equipment or structures around the target body 200 form a shielding effect near the edge regions of the target body 200, limiting the entry of sputtered ions and causing a decrease in the etching rate. For example, the target holder 20 forms a physical barrier at the edge regions of the target body 200.

[0045] It can be understood that due to the adverse effects of the above-mentioned distortion of the electric and magnetic fields and equipment shielding (such as the obstruction of the target material holder 20), the material etching rates in different areas of the target material body 200 vary greatly, which may affect the uniformity of the obtained thin film and reduce the material utilization rate of the target material body 200, resulting in material waste.

[0046] See also Figure 3 Based on the aforementioned embodiments, some embodiments of the present application further provide a magnetron sputtering target, which includes: a support member 100 extending along a first direction (for example, the X direction); a target body 200, wherein the target body 200 is arranged around the radial (for example, the Z direction) circumference of the support member 100; the radial direction (for example, the Z direction) is perpendicular to the first direction (for example, the X direction); wherein the target body 200 includes a base segment 210, two transition segments 220, and two thinning segments 230 arranged along the first direction (for example, the X direction), the two transition segments 220 are respectively arranged on both sides of the base segment 210, and the two thinning segments 230 are correspondingly arranged on the side of each transition segment 220 away from the base segment 210.

[0047] The radial thickness of the transition section 220 and the thinning section 230 gradually changes along a first direction (eg, X direction), and the radial thickness of the base section (210) remains constant along the first direction (eg, X direction).

[0048] The minimum radial thickness of the transition section 220 is greater than the radial thickness of the base section 210 , and the maximum radial thickness of the thinned section 230 is less than the maximum radial thickness of the transition section 220 .

[0049] The magnetron sputtering target provided in the embodiment of the present application is provided with a support member 100 and a target body 200, wherein the support member 100 extends along a first direction (e.g., the X direction), and the base section 210, two transition sections 220, and two thinning sections 230 of the target body 200 are arranged along the first direction (e.g., the X direction) and are all arranged around the radial side (e.g., the Z direction) of the support member 100, wherein the radial direction (e.g., the Z direction) is perpendicular to the first direction (e.g., the X direction). The support member 100 can support the base section 210, the two transition sections 220, and the two thinning sections 230.

[0050] By dividing the target body 200 into the base section 210 , the transition section 220 and the thinning section 230 , the etching time of each portion of the target body 200 can be more precisely controlled.

[0051] Specifically, the base segment 210 in the middle region is subjected to relatively weak ion bombardment. By setting the radial thickness of the base segment 210 to remain constant along the first direction X and setting the minimum radial thickness of the transition segment 220 to be greater than the radial thickness of the base segment 210, the region with weaker magnetic and electric field coverage is matched with the base segment 210 having a smaller radial thickness. The base segment 210 can compensate for the slower etching rate of the target body 200 material in this region during the physical vapor deposition process, thereby ensuring that the material of the base segment 210 is fully etched and consumed. The transition segment 220, on the other hand, is subjected to stronger ion bombardment than the base segment 210. By setting the minimum radial thickness of the transition segment 220 to be greater than the radial thickness of the base segment 210, the region with stronger magnetic and electric field coverage is matched with the transition segment 220 having a larger radial thickness. This facilitates the increased radial thickness to compensate for the faster etching rate, making the etching time of the transition segment 220 and the base segment 210 more consistent, thereby avoiding the situation where the transition segment 220 is prematurely exhausted while a large amount of base segment 210 remains. By setting the maximum radial thickness of the thinning section 230 to be smaller than the maximum radial thickness of the transition section 220, the thinning section 230 can match the adverse effects of magnetic and electric field distortion and equipment shielding effect near the edges of the target body at both ends during the physical vapor deposition process, so that the material etching difficulty of the thinning section 230 is reduced, so that the thinning section 230 located at the edge areas of the target body at both ends can be etched normally, thereby making the etching time required for the base section 210, the transition section 220 and the thinning section 230 tend to be consistent, thereby improving the etching uniformity. In this way, the magnetron sputtering target provided by the present application effectively alleviates the problem of large differences in material etching rates in different areas of the target body in the related art, thereby improving material utilization and ensuring the uniformity of the obtained thin film. It also reduces the frequency of replacing the target body during the production process, reduces the downtime, and thus improves production efficiency.

[0052] The following is combined with Figure 3The preferred technical solution for the magnetron sputtering target material of the embodiment of the present application is described.

[0053] In the embodiment of the present application, the axial length ratio (W1:W2:W3) of the base section 210, the transition section 220, and the thinning section 230 includes: (8-10): (2-4):1, which can match the thickness distribution of the target body 200 with the influence of the electromagnetic field superposition, thereby improving the material utilization rate of the target body 200. For example, the axial length ratio (W1:W2:W3) of the base section 210, the transition section 220, and the thinning section 230 can be 8:2:1, 9:3:1, or 10:4:1.

[0054] For some specific implementations, please refer to Figure 3 The radial thickness H3 of the thinned section 230 gradually decreases in a direction away from the base section 210 .

[0055] The etching rate of the edge area of the target body 200 is usually affected by many factors, such as the distortion of the electric and magnetic fields, the shielding effect of surrounding equipment, etc. The inventors of this case have found that these influences show a gradual trend, that is, the closer to the edge area, the more significant the influence. The embodiment of the present application matches this gradual influence by gradually designing the radial thickness of the thinning section 230. The radial thickness of the part close to the transition section 220 is larger, which can offset the slight decrease in etching rate; and the radial thickness of the part close to the edge is thinner, which can compensate for the more significant decrease in etching rate. This gradual design makes the actual etching time of each part of the thinning section 230 tend to be consistent, balancing the material utilization of each part of the thinning section 230.

[0056] Further, see Figure 3 , the radial thickness of the thinning section 230 changes continuously in the direction away from the base section 210, and the rate of change continuously increases or decreases. Based on the above analysis, in the edge area of the target body 200, due to the distortion of the electric field and the magnetic field and the shielding effect of the surrounding equipment, the etching rate usually decreases nonlinearly. The above-mentioned radial change law of the thinning section 230 provided in the embodiment of the present application can well match this nonlinear effect. For example, when the etching rate in the edge area decays in a curve, the corresponding gradual radial thickness change of the thinning section 230 can accurately compensate for this attenuation. Through this fine radial thickness adjustment, the actual etching time of each part of the thinning section 230 can be made consistent, thereby achieving a more uniform etching effect, which not only improves the material utilization of the target body 200, but also ensures the consistency and uniformity of the etching process, which helps to improve the quality and uniformity of thin film deposition.

[0057] In other examples, the radial thickness of the thinned section 230 changes continuously in a direction away from the base section 210, and the rate of change increases continuously (eg, Figure 3As shown), the radial thickness of the thinning section 230 first decreases gently and then decreases rapidly. This design is suitable for the situation where the etching rate first decreases gently and then decreases rapidly.

[0058] In some examples, the radial thickness of the thinning section 230 changes continuously in a direction away from the base section 210, and the rate of change continues to decrease (not shown in the figure), so that the radial thickness of the thinning section 230 first decreases rapidly and then decreases slowly. This design is suitable for situations where the etching rate first decreases rapidly and then decreases slowly.

[0059] Therefore, this ensures effective utilization of the edge area, which not only improves the overall material utilization of the target body 200 , but also extends the service life of the target body 200 .

[0060] In some other embodiments (not shown in the drawings of this embodiment), the radial thickness of the thinned section 230 changes continuously in a direction away from the base section 210, and the rate of change remains constant.

[0061] In some scenarios, the factors affecting target edge etching can also exhibit linear variations, and the aforementioned radial thickness variation pattern of the thinning section 230 can better match this linear effect. In this case, the radial thickness of the thinning section 230 decreases uniformly, and this design is suitable for situations where the etching rate decreases uniformly.

[0062] In other embodiments, the radial thickness H3 of the thinned section 230 is less than 10.5 mm.

[0063] In this embodiment, based on the cost and sputtering performance of the target body 200, the maximum radial thickness of the target body 200 is set to 10.5 mm. The maximum radial thickness of the target body 200 is also the maximum radial thickness of the transition section 220. In order to ensure that the radial thickness H3 of the thinning section 230 is less than the radial thickness H2 of the transition section 220, the radial thickness H3 of the thinning section 230 needs to be set to less than 10.5 mm.

[0064] In some examples, the overall radial thickness H3 of the thinned section 230 is 1 mm, 5 mm, or 10 mm.

[0065] In other examples, the radial thickness H3 of the thinned section 230 decreases from 10.5 mm to 0 mm according to a certain curve variation rule or a linear variation rule.

[0066] In yet other examples, the radial thickness H3 of the thinned section 230 decreases from 10.5 mm to 3 mm, 2 mm, or 1 mm according to a certain curve variation rule or a linear variation rule. Furthermore, the radial thickness H3 of the thinned section 230 decreases from 10.5 mm to 3 mm, 2 mm, or 1 mm and then remains at 3 mm, 2 mm, or 1 mm.

[0067] In some other embodiments, the axial length W1 of the thinned section 230 includes: 1 cm to 3 cm. For example, the axial length W1 of the thinned section 230 is 1 cm, 2 cm or 3 cm.

[0068] The inventors of this case discovered that the area 1 cm to 3 cm from the edge of the target body 200 is most susceptible to special factors, such as electric and magnetic field distortion and the shielding effect of surrounding equipment. By setting the axial length of the thinning section 230 within this range, this specific area can be precisely matched, ensuring that the thinning process is only applied to the areas truly needed. This prevents excessive thinning that would affect target strength, nor insufficient thinning that would fail to effectively address edge etching issues.

[0069] Please continue reading Figure 3 In some embodiments, the radial thickness H2 of the transition section 220 is gradually increased in a direction away from the base section.

[0070] The inventors of this case discovered that the etching rate of the transition section 220 is easily affected by the superposition of electric and magnetic fields. These effects are often gradual, with the effect becoming greater closer to the edge. Regions with greater influence have faster etching rates and are more susceptible to etching. By matching the transition section 220's radial thickness gradient to this gradual effect, the portion near the base section 210 has a smaller radial thickness, offsetting the slow increase in etching rate; while the portion near the thinning section 230 has a thicker radial thickness, compensating for the more significant increase in etching rate. This gradient design allows the actual etching times of the transition section 220 and the base section 210 to converge, balancing the material utilization of the target body 200.

[0071] In some embodiments, the radial thickness of the transition section 220 changes continuously in a direction away from the base section 210, and the rate of change continuously increases or decreases. Specifically, during the sputtering process of the transition section 220, the superimposed effects of the electric field and the magnetic field usually change nonlinearly, and the gradual radial thickness change can better match this nonlinear effect. For example, if the increase in the etching rate increases exponentially, then the corresponding gradual radial thickness change can accurately compensate for this increase. Through this fine radial thickness adjustment, the actual etching time of each part of the transition section 220 can be made consistent, thereby achieving a more uniform etching effect, which not only improves the material utilization of the target body 200, but also ensures the consistency of the etching process, which helps to improve the quality and uniformity of thin film deposition.

[0072] In some embodiments, the radial thickness of the transition section 220 changes continuously in a direction away from the base section 210, and the rate of change increases continuously (e.g., Figure 3As shown), the radial thickness of the transition section 220 first increases gently and then increases rapidly. This design is suitable for the case where the etching rate first increases gently and then increases rapidly.

[0073] The radial thickness of the transition section 220 changes continuously in the direction away from the base section 210, and the rate of change continues to decrease (not shown in the figure), so that the radial thickness of the transition section 220 first increases rapidly and then increases slowly. This design is suitable for situations where the etching rate first increases rapidly and then increases slowly.

[0074] Therefore, this design ensures the effective utilization of the transition section 220 , which not only improves the overall material utilization rate of the target body 200 , but also extends the service life of the target body 200 .

[0075] In some other embodiments (not shown in the drawings of this embodiment), the radial thickness of the transition section 220 changes continuously in a direction away from the base section 210, and the rate of change remains constant.

[0076] In some scenarios, the etching factor affecting the transition section 220 of the target body 200 may also exhibit a linear variation. The aforementioned radial thickness variation pattern of the transition section 220 can better match this linear effect. In this case, the radial thickness of the transition section 220 increases uniformly, which is suitable for situations where the etching rate increases uniformly.

[0077] In other embodiments, the radial thickness H2 of the transition section 220 ranges from 9 cm to 10.5 cm.

[0078] In this embodiment, based on considerations of the target body 200's cost, sputtering performance, and the effects of the superposition of electric and magnetic fields, the radial thickness H1 of the base section 210 can be set to 9 mm, which is the minimum radial thickness of the transition section 220. Based on considerations of the target body 200's cost and sputtering performance, the maximum radial thickness of the target body 200 can be set to 10.5 mm, which is the maximum radial thickness of the transition section 220. Therefore, the radial thickness H2 of the transition section 220 ranges from 9 cm to 10.5 cm.

[0079] Please continue to see Figure 3 In some other embodiments, the support member 100 is provided in a tubular shape, and the interior of the tubular support member 100 can be used to place a cooling member and a magnetic field applying member of the magnetron sputtering device.

[0080] During the sputtering process on the target body 200 , the heat generated by the target body 200 may be transferred to the cooling member through the support member 100 , and the cooling member may dissipate the heat, thereby achieving heat dissipation of the target body 200 .

[0081] It should be noted that the cooling element is a structural design already existing in the art and will not be described in detail here.

[0082] The inventors of this case conducted the following comparative experiments to verify that the magnetron sputtering target provided in the embodiments of the present application has improved material utilization and etching uniformity.

[0083] 1. Test condition setting

[0084] 1. Target body 200: a. Control group: Provide the attached Figure 2 The target body 200 of the magnetron sputtering target shown in FIG. 2 (thin in the middle and thick at both ends); b. Experimental group: provide the attached Figure 3 The target body 200 of the provided magnetron sputtering target (including a base section 210 , a transition section 220 and a thinned section 230 ) is shown; two groups of target bodies 200 are set to be the same material to ensure the control of relevant variables.

[0085] 2. Test equipment: Use the same type of magnetron sputtering device, such as the one in the attached document. Figure 1 The magnetron sputtering device shown.

[0086] 3. Test parameters: Using the same test sputtering parameters, for example, the pressure in the sputtering chamber of the magnetron sputtering device is set to 1.0 Pa, the oxygen flow rate is 24 sccm, the operating power of the magnetron sputtering device is 6 kW, and the argon flow rate is 800 sccm.

[0087] 4. Number of tests: Three tests are conducted on each group of target bodies 200, and the variables in the three tests are set as: the total axial width of the target body 200 (ie, the sum of the axial lengths of each segment).

[0088] Table 1: Target body 200 related parameters of the control group

[0089] control group Test 1 Test 2 Test 3 The average radial thickness of the base segment 210 9mm 9mm 9mm The average radial thickness of the thickened section 240 is 10.5mm 10.5mm 10.5mm Axial length of the base segment 210 8mm 18mm 30mm Axial length of the thickened section 240 3mm 8mm 15mm

[0090] Table 2: Target body 200 parameters in the test group

[0091] experimental group Test 1 Test 2 Test 3 The average radial thickness of the base segment 210 9mm 9mm 9mm The average radial thickness of the transition section 220 is 10.5mm 10.5mm 10.5mm The average radial thickness of the thinned section 230 10mm 10mm 10mm Axial length of the base segment 210 8mm 18mm 30mm The axial length of the transition section 220 2mm 6mm 12mm Axial length of the thinned section 230 1mm 2mm 3mm

[0092] 2. Test process

[0093] 1. Preparation stage: Accurately measure and record the initial weight of the two sets of target bodies 200 and the average radial thickness of each section; check and calibrate the magnetron sputtering device.

[0094] 2. Sputtering process: Install the magnetron sputtering target into the magnetron sputtering device; introduce argon gas to the set pressure; start the sputtering power supply and adjust it to the set power; perform continuous sputtering for 10 hours.

[0095] 3. Measurement phase: After sputtering, remove the target body 200; accurately measure and record the final weight of the target body 200; accurately measure and record the average radial thickness values of the control group base segment 210, the control group thickening segment 240, the experimental group base segment 210, the experimental group transition segment 220, and the experimental group thinning segment 230.

[0096] 4. Data analysis: Calculate material utilization rate = (initial weight - final weight) / initial weight × 100%; analyze the etching conditions of each component of the target body 200, and comprehensively evaluate the etching uniformity of the base section 210, transition section 220, and thinning section 230 of the target body 200.

[0097] 5. Number of tests: Conduct three tests on each set of 200 target bodies and record the relevant data.

[0098] 3. Test results

[0099] Table 3: Material Utilization Rate

[0100] control group experimental group Utilization comparison Test 1 78.2％ 80.3％ +2.1％ Test 2 77.9％ 80.1％ +2.2％ Test 3 78.5％ 80.4％ +1.9％ Data mean 78.2％ 80.3％ +2.1％

[0101] Table 4: Changes in the average radial thickness of each segment in the control group

[0102]

[0103] Table 5: Changes in the average radial thickness of each segment in the experimental group

[0104]

[0105] 4. Analysis of test results:

[0106] 1. Material utilization rate

[0107] The average material utilization rate of the target body 200 in the experimental group is 2.1% higher than that in the control group (80.3%-78.2%=2.1%), and the material utilization rate of the target body 200 in the experimental group is improved.

[0108] 2. Etching uniformity

[0109] Compared with the control group, after the target body 200 of the experimental group was sputtered for a preset time, the average radial thickness values of each section were relatively uniform. For example, in the control group: the average radial thickness values of the edges at both ends of the thickening section 240 were greater than the average radial thickness values of other parts of the thickening section 240 and the base section 210, and the etching depth at both ends of the thickening section 240 was significantly smaller than the middle part of the thickening section 240 and the base section 210. There was some material that was not fully utilized in the edge area of the target body 200. For example, the extreme difference values of each section in the three tests were between 3mm and 4mm.

[0110] In the experimental group: the radial thickness values of the base section 210, the transition section 220 and the thinning section 230 tend to be consistent, and the etching of the base section 210, the transition section 220 and the thinning section 230 is more uniform (see Figure 4 ), especially the thinned section 230, whose etching degree is similar to that of other parts of the target body 200. For example, the extreme difference values of each section in three tests can be controlled within 1 mm.

[0111] It can be seen that the magnetron sputtering target provided in the embodiment of the present application effectively overcomes the problem that the edge area of the target body 200 is difficult to etch, and has achieved beneficial progress in material utilization and etching uniformity.

[0112] It should be understood that the embodiments of the present application are not limited to the precise structures described above and shown in the drawings, and various modifications and changes can be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A magnetron sputtering target, comprising a support member (100) extending along a first direction, characterized in that: Also includes: The target body (200) is arranged around the radial circumference of the support member (100); the radial direction is perpendicular to the first direction; wherein, The target body (200) comprises a base section (210), two transition sections (220) and two thinning sections (230) arranged along the first direction; the two transition sections (220) are respectively arranged on both sides of the base section (210), and the two thinning sections (230) are respectively arranged on the side of each transition section (220) away from the base section (210); the radial thickness of the transition section (220) and the thinning section (230) gradually changes along the first direction, and the radial thickness of the base section (210) remains constant along the first direction; the minimum radial thickness of the transition section (220) is greater than the radial thickness of the base section (210), and the maximum radial thickness of the thinning section (230) is less than the maximum radial thickness of the transition section (220).

2. The magnetron sputtering target according to claim 1, characterized in that The axial length ratio of the base section (210), the transition section (220) and the thinning section (230) comprises: (8-10): (2-4):

1.

3. The magnetron sputtering target according to claim 1, characterized in that The radial thickness of the thinned section (230) gradually decreases in a direction away from the base section (210).

4. The magnetron sputtering target according to claim 3, characterized in that The radial thickness of the thinning section (230) changes continuously in a direction away from the base section (210), and the rate of change increases or decreases continuously.

5. The magnetron sputtering target according to claim 1, characterized in that The maximum radial thickness of the thinned section (230) is less than 10.5 mm.

6. The magnetron sputtering target according to claim 1, characterized in that The axial length of the thinning section (230) ranges from 1 cm to 3 cm.

7. The magnetron sputtering target according to any one of claims 1 to 6, characterized in that: The radial thickness of the transition section (220) gradually increases in a direction away from the base section (210).

8. The magnetron sputtering target according to claim 7, characterized in that The radial thickness of the transition section (220) changes continuously in a direction away from the base section (210), and the rate of change increases or decreases continuously.

9. The magnetron sputtering target according to claim 7, characterized in that The radial thickness of the transition section (220) ranges from 9 cm to 10.5 cm.

10. A magnetron sputtering device, characterized in that: The invention comprises a target support and a magnetron sputtering target according to any one of claims 1 to 9 arranged on the target support.

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