Full-color laser display device

Abstract

The utility model relates to a full-color laser display device which can directly output lasers of different colors and achieve high-quality full-color display. Comprising a substrate, a light emitting array and multiple types of quantum dots VCSELs. And constructing a quantum dot vertical cavity surface emitting laser on part or all of the first light emitting units to form an optical resonant cavity. The wavelength of light resonated and amplified by the resonant cavity is accurately matched with the central wavelength of emergent light of the quantum dot layer, so that direct conversion from a basic light source to laser with a specific color is realized. The quantum dot vertical cavity surface emitting laser comprises two or more types, is equipped with quantum dot layers of different materials, and emits light of different wavelengths. Photoetching, film coating and quantum dot synthesis and deposition technologies are adopted, a target area is protected through a mask, and the forming position and type of the quantum dot vertical cavity surface emitting laser are controlled. The color conversion process is simplified, the accuracy and the color gamut coverage range are improved, and meanwhile the advantages of low power consumption and high light beam collimation are kept.

Description

Technical Field

[0001] The present application relates to the field of laser display technology, and in particular to a full-color laser display device. Background Art

[0002] As a next-generation display technology, full-color laser display is becoming a driving force for innovation in high-end manufacturing, smart cities, smart homes, smartphones, virtual reality, augmented reality, and intelligent driving. Vertical-cavity surface-emitting lasers (VCSELs), with their unique advantages—such as excellent beam quality, wide modulation bandwidth, long lifetime, and single-mode emission—combined with their compact size and ease of integration, provide an ideal light source solution for high-density circuit and system designs. VCSELs are widely used not only in optical communications but also show great potential in a variety of fields, including sensors, laser printing, laser medical treatment, industrial processing, and laser displays.

[0003] However, despite significant progress in GaN-based VCSEL technology, the realization of full-color VCSEL-based laser displays still faces numerous technical bottlenecks and challenges. In particular, the preparation of the red, green, and blue (RGB) VCSELs—the core of full-color laser displays—is hindered by the complexity of material epitaxy and limitations in device structure design. These include the "green gap" problem (a challenge in green light efficiency and stability) and the difficulty in growing high-quality red quantum wells, which directly hinder the commercialization of full-color laser displays. Furthermore, while quantum dot-based full-color laser display technology offers another potential solution, the inadequate blue light performance of quantum dot materials also limits its widespread adoption in practical applications. While electrically injected quantum dot VCSEL technology offers potential advantages, it is still in its early stages of research and development, hindered by imperfect material properties and the design of the injection channel, making it difficult to rapidly transition to production capacity.

[0004] In view of the above problems, the current full-color laser display preparation technology on the market generally has the disadvantages of complex preparation process, multiple large-scale transfers and reliance on expensive external auxiliary equipment, which not only increases production costs but also limits the market competitiveness of products. Therefore, exploring a new full-color laser display device and its manufacturing method that can achieve high integration, reduce costs and improve efficiency has become the focus of attention. In order to overcome the limitations of existing technologies and promote the further development of full-color laser display technology, it is necessary to develop a technical solution that can effectively solve the key problems in material epitaxy, device structure design and preparation process, and realize the efficient and low-cost preparation of red, green and blue VCSELs. Utility Model Content

[0005] The purpose of the present application is first to provide a vertical cavity surface emitting laser with a simplified structure, which can generate highly collimated laser light only through optical excitation. The quantum dot vertical cavity surface emitting laser specifically includes an excitation light source, a quantum dot layer bottom reflector, a quantum dot layer, and a quantum dot layer top reflector, wherein the quantum dot layer bottom reflector, the quantum dot layer, and the quantum dot layer top reflector are stacked in sequence;

[0006] The quantum dot layer includes light-converting luminescent quantum dots, which receive light from an excitation light source and convert it into light of another wavelength. An optical resonant cavity is formed between the bottom reflector of the quantum dot layer and the top reflector of the quantum dot layer. The wavelength of light resonated and amplified by the optical resonant cavity is the same as the central wavelength of the output light of the quantum dot layer.

[0007] The quantum dot layer bottom reflector is formed on the excitation light source, and light from the excitation light source enters the optical resonant cavity through the quantum dot layer bottom reflector.

[0008] In one embodiment, the light-converting luminescent quantum dots are down-converting luminescent quantum dots.

[0009] In one embodiment, the light emitted by the excitation light source is blue light or ultraviolet light, and the output light of the down-conversion luminescent quantum dots is green light or red light.

[0010] In one embodiment, the excitation light source includes a vertical cavity surface emitting laser structure.

[0011] The present application further provides a full-color laser display device that can achieve high-resolution full-color display, and can obtain display products with higher brightness and wider color gamut, enhance beam collimation, reduce speckle, and ensure low power consumption. The full-color laser display device includes a substrate, a light-emitting array, and a quantum dot vertical cavity surface emitting laser;

[0012] The light emitting array includes a plurality of first light emitting units arranged in an array;

[0013] forming the quantum dot vertical cavity surface emitting lasers on part or all of the first light-emitting units, respectively; each quantum dot vertical cavity surface emitting laser comprises a quantum dot layer bottom reflector, a quantum dot layer, and a quantum dot layer top reflector; an optical resonant cavity is formed between the quantum dot layer bottom reflector and the quantum dot layer top reflector; the wavelength of light resonated and amplified by the optical resonant cavity is the same as the central wavelength of the output light of the quantum dot layer;

[0014] Among them, there are two or more different types of quantum dot vertical cavity surface emitting lasers, and different types of quantum dot vertical cavity surface emitting lasers have different quantum dot layers.

[0015] In one embodiment, the first light emitting unit is a first vertical cavity surface emitting laser, and each of the first vertical cavity surface emitting lasers includes a first bottom reflecting mirror, an active layer, and a first top reflecting mirror.

[0016] In one embodiment, the first top reflector and the quantum dot layer bottom reflector are in the same layer structure.

[0017] In one embodiment, the first vertical cavity surface emitting laser is a blue laser or an ultraviolet laser.

[0018] In one embodiment, the output light of the quantum dot layer in the quantum dot vertical cavity surface emitting laser includes green light and red light.

[0019] In one embodiment, the center wavelength of the output light of the first vertical cavity surface emitting laser is 450 nm, the center wavelength of the green light is 520 nm, and the center wavelength of the red light is 630 nm.

[0020] In one embodiment, the number of first vertical cavity surface emitting lasers that do not form the quantum dot vertical cavity surface emitting laser, the number of quantum dot vertical cavity surface emitting lasers that emit green light, and the number of quantum dot vertical cavity surface emitting lasers that emit red light are the same.

[0021] In one embodiment, the quantum dot vertical cavity surface emitting laser is formed on the light exit hole of the first vertical cavity surface emitting laser.

[0022] In one embodiment, the size of the quantum dot layer bottom reflector is larger than the light exit hole size of the first vertical cavity surface emitting laser.

[0023] In one embodiment, the size of the quantum dot layer is the same as the size of the bottom reflector of the quantum dot layer, and the size of the top reflector of the quantum dot layer is larger than the size of the quantum dot layer.

[0024] Compared with the existing technology, this application has the following beneficial effects: The full-color laser display device proposed in this application, by combining the light-emitting array with quantum dot vertical cavity surface emitting laser (VCSEL) technology, achieves technical effects such as high-resolution full-color display, high brightness and wide color gamut, enhanced beam collimation, and reduced speckle. Through an integrated design, this application directly constructs different types of quantum dot VCSELs on the light-emitting array, including green quantum dot VCSELs and red quantum dot VCSELs. These are combined with blue or ultraviolet VCSELs that may serve as a basis, achieving direct emission of the three primary colors of red, green, and blue, thereby eliminating the need for a complex color conversion process and improving the color purity and resolution of the display. Thanks to the high modulation bandwidth of VCSEL and the efficient luminescence characteristics of quantum dot materials, this device can output high-brightness laser beams while covering a wider color gamut. By precisely controlling the material composition and thickness of the quantum dot layer, it ensures that each color VCSEL achieves optimal luminescence efficiency, thereby realizing full-color laser display with high brightness and wide color gamut, meeting the stringent requirements of high-end display applications for color richness and brightness.

[0025] This application optimizes the reflector structure and optical resonant cavity design of blue or violet VCSELs and quantum dot vertical cavity surface emitting lasers to effectively improve the collimation of the light beam and reduce the diffusion and speckle phenomenon during the propagation process. This not only improves image clarity and contrast, but also reduces visual fatigue and enhances viewing comfort. By precisely controlling the operating state of each light-emitting unit and quantum dot VCSEL, efficient energy utilization is achieved, avoiding unnecessary energy loss. At the same time, the efficient light-emitting properties of quantum dot materials further reduce overall power consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a schematic structural diagram of a quantum dot vertical cavity surface emitting laser in one embodiment of the present application;

[0027] Figure 2 1 is a schematic structural diagram of a full-color laser display device in one embodiment of the present application;

[0028] Figure 3 This is a flow chart of a method for manufacturing a full-color laser display device of the present application;

[0029] Figure 4 It is a structural diagram of each step of the full-color laser display device in the specific implementation method of this application.

[0030] Explanation of the accompanying drawings: 100, substrate; 200, light-emitting array; 210, first light-emitting unit; 211, first vertical cavity surface emitting laser; 212, excitation light source; 220, first bottom reflector; 230, active layer; 240, first top reflector; 250, light output hole; 300, quantum dot vertical cavity surface emitting laser; 310, quantum dot layer bottom reflector; 320, quantum dot layer; 330, quantum dot layer top reflector; 340, mask. DETAILED DESCRIPTION

[0031] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. It will be understood that the specific embodiments described herein are only used to explain the present application, rather than to limit the present application. It should also be noted that, for ease of description, only some, rather than all, structures related to the present application are shown in the accompanying drawings. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0032] As used herein, the terms "comprise," "comprising," and "having," and any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or elements is not limited to the listed steps or elements but may optionally include steps or elements not listed, or may optionally include other steps or elements inherent to the process, method, product, or apparatus.

[0033] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0034] Full-color laser display, with its advantages of excellent color expression, high brightness and wide color gamut, has shown great application potential and market prospects in high-end manufacturing, smart cities, smart homes, smartphones, virtual reality, augmented reality and intelligent driving. However, traditional full-color laser display technology often faces challenges in material selection, device structure, preparation process and other aspects during implementation, resulting in high production costs and difficulty in large-scale commercial application. To overcome these difficulties, this application proposes an innovative full-color laser display device and its manufacturing method. The device achieves direct emission of the three primary colors of red, green and blue by cleverly combining vertical cavity surface emitting lasers (VCSELs) with quantum dot light conversion technology, without the need for complex color conversion processes, thereby significantly improving display performance and reducing production costs. Figure 1 As shown, Figure 1 This is a structural schematic diagram of a quantum dot vertical cavity surface emitting laser in an embodiment of the present application. The quantum dot vertical cavity surface emitting laser 300 includes an excitation light source 212, a quantum dot layer bottom reflector 310, a quantum dot layer 320 and a quantum dot layer top reflector 330. The quantum dot layer bottom reflector 310, the quantum dot layer 320 and the quantum dot layer top reflector 330 are stacked in sequence. The quantum dot layer 320 includes light-converting luminescent quantum dots, which receive light from the excitation light source and convert it into light of another wavelength. An optical resonant cavity is formed between the quantum dot layer bottom reflector 310 and the quantum dot layer top reflector 320. The wavelength of light resonated and amplified by the optical resonant cavity is the same as the central wavelength of the output light of the quantum dot layer. The quantum dot layer bottom reflector is formed on the excitation light source, and the light from the excitation light source enters the optical resonant cavity through the quantum dot layer bottom reflector.

[0035] The "quantum dot layer bottom reflector" and "quantum dot layer top reflector" referred to in this application are the bottom reflector and top reflector corresponding to the quantum dot layer, and do not refer to the reflector formed by quantum dots. The reflector can enhance and improve the collimation of the light converted by the quantum dots.

[0036] The quantum dot vertical cavity surface emitting laser of the present application does not require complex structures such as electrodes. Instead, it only requires a quantum dot layer bottom reflector, the quantum dot layer, and the quantum dot layer top reflector to be stacked in sequence. No additional functional layers are required between the layers. It can be composed solely of the quantum dot layer bottom reflector, the quantum dot layer, and the quantum dot layer top reflector, thus simplifying the structure. By using down-conversion luminescent quantum dots, it is only necessary to enable the excitation light to enter the optical resonant cavity, and the excitation light does not need to be strictly limited to a specific method.

[0037] Furthermore, the light-converting luminescent quantum dots are down-converting luminescent quantum dots. In this arrangement, incident light enters the optical resonator of the quantum dot vertical cavity surface emitting laser through the bottom and does not diverge from other locations. This can be achieved through a stacked structural design, requiring only that the excitation light be directed from the bottom to the quantum dot layer. Through quantum dot optical excitation, the quantum dots emit light of a specific wavelength under specific excitation light. In the field of display technology, this can greatly simplify the device structure. Combining different quantum dots can achieve full-color display while greatly simplifying the overall structure.

[0038] The light conversion method can specifically include up-conversion materials and down-conversion materials. In specific applications, when up-conversion materials are used, the excitation light is red light, and the output light of the quantum dot layer is blue light or yellow light. When down-conversion materials are used, the excitation light is blue light, and the output light of the quantum dot layer is yellow light or red light. In a preferred technical solution, the excitation light of the down-conversion luminescent quantum dots is blue light or ultraviolet light, and the output light of the down-conversion luminescent quantum dots is green light or red light. In this setting, red, green, and blue colors of light can be provided. By adjusting the parameters of the three colors of light, full-color display can be achieved in a simple way. Of course, this is one of the better implementation plans. This application can also select light of other wavelengths. The above-mentioned technical solution using red, green, and blue is relatively clear for the regulation of related display colors.

[0039] Furthermore, the excitation light source includes a vertical cavity surface emitting laser (VCSEL) structure. In one optional technical solution, two stacked VCSEL structures are used to form a quantum dot VCSEL. This structure can utilize excitation light of a more concentrated wavelength to excite the quantum dots. Based on the design of the photoconverting quantum dots, they emit light of a specific wavelength, thereby improving light utilization and achieving higher concentration of the emitted wavelength. This structure facilitates the implementation of a full-color laser display device. The specific methods and principles are described in detail in the related solutions for full-color laser displays.

[0040] Please see further Figure 2 , Figure 2: This is a structural schematic diagram of a full-color laser display device in an embodiment of the present application. The full-color laser display device in a preferred embodiment of the present application is suitable for achieving high-resolution full-color display, and can obtain display products with higher brightness and wider color gamut, enhance beam collimation, reduce speckle, and ensure low power consumption. The full-color laser display device includes a substrate 100, a light-emitting array 200, and a quantum dot vertical cavity surface emitting laser 300. The light-emitting array 200 includes first light-emitting units 210 arranged in an array. The quantum dot vertical cavity surface emitting laser 300 is formed on some or all of the light-emitting units 210. Each quantum dot vertical cavity surface emitting laser 300 includes a quantum dot layer bottom reflector 310, a quantum dot layer 320, and a quantum dot layer top reflector 330. An optical resonant cavity is formed between the quantum dot layer bottom reflector 310 and the quantum dot layer top reflector 330. The wavelength of light resonated and amplified by the optical resonant cavity is the same as the center wavelength of the output light of the quantum dot layer 320.

[0041] The present invention includes two or more different types of quantum dot vertical cavity surface emitting lasers 300, and each type of quantum dot vertical cavity surface emitting laser 300 has a different quantum dot layer 320. Different quantum dot layers 320 herein refer to the ability to emit light of different wavelengths. These can be any possible differences in specific materials, material structures, etc. that may cause quantum dots to emit light of different wavelengths. Common examples of different types of quantum dot vertical cavity surface emitting lasers 300 are green and red light. In full-color display, blue light, green light, and red light can be arranged in a 1:1:1 ratio.

[0042] The first light-emitting unit 210 is a first vertical cavity surface emitting laser 211. Each of the first vertical cavity surface emitting lasers includes a first bottom reflector 220, an active layer 230 and a first top reflector 240. The light-emitting array 200 is composed of a plurality of independent and closely arranged first light-emitting units 210. The first light-emitting unit 210 can be specifically selected as a first vertical cavity surface emitting laser 211. The first vertical cavity surface emitting laser 211 includes a first bottom reflector 220, an active layer 230 and a first top reflector 240. The first vertical cavity surface emitting laser 211 is used as the light source of the excitation light to ensure vertical emission of the laser beam and efficient energy conversion. Quantum dot vertical cavity surface emitting lasers (VCSELs) 300 are integrated onto some or all of the first light-emitting units 210 to achieve direct conversion from a basic light source to a specific color output. Each QD VCSEL 300 consists of a quantum dot layer bottom reflector 310, a quantum dot layer 320 containing a specific type of quantum dot material, and a quantum dot layer top reflector 330, which together form a precise optical resonant cavity. The wavelength of light amplified by the resonant cavity precisely matches the central wavelength emitted by the quantum dot layer 320, thereby greatly enhancing the output efficiency and purity of the specific color light. The QD VCSEL 300 is not a single type, but rather comprises two or more different types of QD VCSELs 300, each equipped with a unique quantum dot layer 320. Combined with the circuitry formed in the substrate 100 to control the light-emitting array 200, this diversified design imparts rich colors and precise control capabilities to the full-color laser display device. Different types of quantum dot layers 320 can respond to and amplify light of different wavelengths, thereby achieving direct emission of the three primary colors of red, green, and blue, and even a wider color gamut. It simplifies the complex color conversion process in traditional display technology and can significantly improve color saturation and color accuracy.

[0043] It should be emphasized that the specific structure of the light-emitting array 200 of the present application is not limited, and light-emitting units of any structure can be used, combined with a quantum dot vertical cavity surface emitting laser 300 that inputs light from the bottom to achieve a full-color laser display. In a further preferred embodiment, the first vertical cavity surface emitting laser 211 is selected as the light source at the bottom, and the first vertical cavity surface emitting laser 211 is selected to emit blue light. The quantum dot layer 320 is selected from a material that converts blue light into green light and blue light into red light. In this way, part of the blue light directly emitted by the first vertical cavity surface emitting laser 211 can be retained. Combined with the green light and red light converted by the quantum dot vertical cavity surface emitting laser 300, a full-color display based on the three primary colors of red, green, and blue can be achieved. The excitation light source 212 is selected in the form of a vertical cavity surface emitting laser to concentrate the wavelength of the excitation light, and the light utilization rate and the concentration of the output wavelength can be higher when the light excites the quantum dots.

[0044] The full-color laser display device provided herein comprises a substrate 100 (silicon or metal-based), a light-emitting array 200 disposed on the substrate 100, and, when a first vertical-cavity surface-emitting laser 211 is used, a first bottom reflector 220, an active layer 230, and a first top reflector 240. The first bottom reflector 220 and the first top reflector 240 constitute the optical resonant cavity of the first vertical-cavity surface-emitting laser 211. The top reflector 240 can be composed of a dielectric film DBR, a grating, a photonic crystal, or the like. Quantum dots are divided into green and red quantum dots. Red and green quantum dot lasers are prepared based on optical pumping from a blue VCSEL. This device not only achieves high-resolution full-color display, but also produces display products with higher brightness and a wider color gamut. Display products using VCSELs can enhance beam collimation, reduce speckle, and maintain low power consumption.

[0045] Specifically, the first vertical cavity surface emitting laser 211 is a blue laser or an ultraviolet laser. The blue laser has a mature manufacturing process and high luminous efficiency. It occupies a key position in the visible spectrum and is one of the ideal basic light sources for building a full-color display system. The ultraviolet laser, due to its shorter wavelength characteristics, exhibits higher energy conversion efficiency and a wider color gamut coverage when exciting specific quantum dot materials, making it possible to achieve more vivid and vivid color performance. Selecting a blue or ultraviolet laser as the first vertical cavity surface emitting laser 211 provides a flexible and diverse basic light source selection for the full-color laser display device, which can meet the color requirements in different application scenarios, and can also adjust the light source characteristics according to specific design requirements to achieve the best display effect. When using ultraviolet lasers, the same process is used to prepare blue, green, and red quantum dot vertical cavity surface emitting lasers (VCSELs) to achieve a full-color display. Specifically, within the UV laser array, blue, green, and red quantum dot VCSELs are formed according to the design. Ultraviolet light combined with photoconversion quantum dots produces blue, green, and red light. The dual VCSEL structure significantly improves brightness and energy efficiency. When using ultraviolet lasers, their high energy and short wavelength characteristics enable more efficient excitation of the quantum dot material, producing color output across a wider color gamut. Both blue and ultraviolet lasers, due to their efficient photoelectric conversion mechanisms and optimized structural designs, can maintain high brightness while reducing energy consumption and improving overall luminous efficiency. Depending on the selected base light source type (blue or ultraviolet), compatible and high-performance quantum dot materials can be selected to ensure stable operation and efficient light emission of the quantum dot VCSEL 300. This optimized material compatibility helps improve the overall performance and reliability of full-color laser display devices.

[0046] To fully cover and accurately reproduce the three primary colors of red, green, and blue, the quantum dot vertical cavity surface emitting lasers 300 in this full-color laser display device are divided into two categories: green quantum dot VCSELs and red quantum dot VCSELs. Specifically, the quantum dot vertical cavity surface emitting lasers 300 include green quantum dot VCSELs and red quantum dot VCSELs. By subdividing the quantum dot vertical cavity surface emitting lasers 300 into those emitting green and red light, they can directly and efficiently generate red and green laser light. Combined with the blue light that may come from the first vertical cavity surface emitting laser 211 (if a blue laser is selected as the primary light source), they accurately cover and reproduce the three primary colors, greatly improving color accuracy and fidelity. In this approach, the blue light provided by the first vertical cavity surface emitting laser 211 directly serves as the blue light in the three primary colors, requiring only the green and red quantum dot VCSELs to be manufactured. This further simplifies the structure, reduces the number of manufacturing steps, and reduces process complexity and manufacturing costs. Quantum dot materials, due to their unique size quantum effect and bandgap tunability, enable efficient, narrowband emission at specific wavelengths. This characteristic gives the green and red quantum dot VCSELs extremely high color purity and saturation. By integrating different types of quantum dot vertical-cavity surface-emitting lasers 300, greater design flexibility is achieved, allowing the proportion and layout of the green and red quantum dot VCSELs to be flexibly adjusted to achieve optimal color balance and display quality, based on specific application scenarios and color requirements.

[0047] In order to ensure that the full-color laser display device can accurately generate and mix the three primary colors of light, the first light-emitting unit 210 in this device is designed to have a shorter center wavelength of the emitted light. The center wavelength of the emitted light of the first light-emitting unit 210 is 450nm, the center wavelength of the emitted light of the green quantum dot VCSEL is 520nm, and the center wavelength of the emitted light of the red quantum dot VCSEL is 630nm. By strictly controlling the center wavelength of the emitted light of the first light-emitting unit, the green quantum dot VCSEL, and the red quantum dot VCSEL, it is possible to ensure the purity and accuracy of the three primary colors of light, which is crucial for achieving high-quality full-color display, avoid color deviation and color mixing, and improve image clarity and color accuracy. In this technical solution, in order to ensure the collimation of light, the first light-emitting unit 210 preferably also has a light-emitting structure with high collimation, such as a VCSEL or micro-disk structure.

[0048] In a further technical solution, the first top reflector 230 and the quantum dot layer bottom reflector 310 are of the same layer structure. In a specific implementation process, the various layers in the reflector can be manufactured simultaneously, or the quantum dot layer bottom reflector can be omitted to form a micro-disk structure, thereby realizing a laser light output structure under the excitation of the whispering gallery mode.

[0049] Selecting a wavelength of 450nm as the basic light source of the first light-emitting unit 210 is conducive to the energy absorption and conversion of the subsequent quantum dot vertical cavity surface emitting laser 300. The green quantum dot VCSEL and the red quantum dot VCSEL can make full use of this high-energy light source to emit light of a specific wavelength through the stimulated emission process of the quantum dot material, thereby achieving efficient and stable energy conversion. By precisely controlling the center wavelength of the three-color light source, a wider color gamut can be covered. This wide color gamut coverage capability enables the full-color laser display device to present richer and more delicate color changes.

[0050] In terms of fine layout, the number of the first vertical cavity surface emitting laser 211 (using only blue light, which can be called "basic blue light VCSEL"), the green light quantum dot VCSEL and the red light quantum dot VCSEL in the array without forming the quantum dot vertical cavity surface emitting laser 300 is precisely controlled to be the same. This balanced configuration helps to achieve uniformity and stability of color output. The arrangement of these lasers on the substrate 100 is optimized to be arranged in sequence, that is, arranged in a cyclic order of basic blue light VCSEL, green light quantum dot VCSEL300, and red light quantum dot VCSEL300. This orderly arrangement not only simplifies the manufacturing process, but also improves the color consistency between pixels, which helps to achieve a more delicate and coherent image display effect.

[0051] In order to achieve a more compact and efficient optical structure design, the quantum dot vertical cavity surface emitting laser 300 is formed on the light exit hole 250 of the first vertical cavity surface emitting laser 211. The two optical elements with different functions are seamlessly integrated in space, so that the two components that originally needed to be set up independently are combined into one, forming a new laser emission unit with composite functions. For example, the green light quantum dot VCSEL and the red light quantum dot VCSEL are precisely grown above the light exit hole 250 of the first vertical cavity surface emitting laser 211 at specific positions, ensuring that the output light from the first vertical cavity surface emitting laser 211 can be directly received and converted, thereby emitting pure and efficient green light and red light. By directly integrating the quantum dot vertical cavity surface emitting laser 300 on the light output hole 250 of the first vertical cavity surface emitting laser 211, space resources are saved, the compactness and integration of the optical structure are improved, and the volume and weight of the overall display device are reduced. Because the quantum dot vertical cavity surface emitting laser 300 is directly located on the light output path of the first vertical cavity surface emitting laser 211, no additional optical components or complex optical path design are required to achieve efficient conversion and transmission of light energy. This simplified optical path design not only reduces light loss during transmission, but also improves the energy conversion efficiency of the entire optical system, allowing the full-color laser display device to emit brighter and purer color light at the same power consumption.

[0052] To optimize optical performance and improve light energy utilization efficiency, the size of the quantum dot layer bottom reflector 310 is larger than the light exit aperture 250 of the first VCSEL 211. By increasing the size of the quantum dot layer bottom reflector 310 so that it can completely cover the light exit aperture 250 of the first VCSEL 211, light leakage and scattering are effectively reduced, and the light energy collection efficiency on the reflector is improved. This allows more light to be reflected and directed to the quantum dot VCSEL 300, thereby converting it into the required green and red light, thereby improving the overall light energy utilization efficiency.

[0053] In order to further optimize the optical performance and ensure efficient use of light energy, the size of the quantum dot layer 320 is the same as that of the second reflector, and the size of the quantum dot layer top reflector 330 is larger than that of the quantum dot layer 320. The design of the quantum dot layer 320 and the quantum dot layer reflector 310 being the same size ensures that light can be completely and evenly irradiated onto the quantum dot layer 320, thereby maximizing the absorption and conversion efficiency of light energy in the quantum dot layer 320. This design reduces the waste and scattering of light, allowing more light energy to be converted into the required green and red light. The design of the quantum dot layer top reflector 330 being larger than the quantum dot layer 320 reflects the light emitted from the edge back into the resonant cavity, enhancing the resonance effect in the resonant cavity, allowing more photons to be reflected and amplified multiple times in the cavity, thereby improving the output intensity of the laser. At the same time, the increased reflector area also reduces the scattering and leakage of light at the edge, thereby further improving the coherence of the output light wavelength and the stability of the laser output.

[0054] Specifically, the thickness of the quantum dot layer 320 is half the wavelength of the light resonantly amplified by the optical cavity (1 / 2λ0, where λ0 is the center wavelength of the emitted light). This precise design allows the quantum dot layer 320 to serve as a key component in the optical cavity, creating a perfect resonance condition with the upper and lower reflectors, thereby maximizing the intensity of the emitted laser light. Furthermore, as the medium for converting light energy to a specific wavelength, the specific ratio of its thickness to the wavelength also helps improve the efficiency and purity of color conversion. The thickness of the quantum dot layer 320 is set to half the wavelength of the light (1 / 2λ0, where λ0 is the center wavelength of the emitted light), a result of careful calculation based on the principles of optical resonance. This design enables the quantum dot layer 320 to serve as a half-wavelength node in the cavity, creating optimal resonance conditions with the upper and lower reflectors. In this resonance state, photons form a stable standing wave within the cavity, which, after multiple reflections and amplification, significantly enhances the intensity and directionality of the emitted laser light.

[0055] Specifically, the material system of the quantum dot layer 320 is selected from CdSe, CdTe, CdS, ZnSe, ZnTe, ZnS, CuInS, CuInSeS, AgInS, AgInSeS, InP, CuZnSe, ZnMnSe, PbS, PbSe, Cd-based alloy materials, In-based alloy materials, Zn-based alloy materials or perovskite materials.

[0056] In addition, the present application also provides a method for manufacturing a full-color laser display device, comprising: fabricating a plurality of first light-emitting units 210 arranged in an array on a substrate 100 to form a light-emitting array 200; depositing a quantum dot layer bottom reflector 310, a quantum dot layer 320, and a quantum dot layer top reflector 330 on part or all of the first light-emitting units 210 in the light-emitting array 200; and forming a quantum dot vertical cavity surface emitting laser 300 on the first light-emitting unit 210. An optical resonant cavity is formed between the quantum dot layer bottom reflector 310 and the quantum dot layer top reflector 330. The wavelength of light resonated and amplified by the optical resonant cavity is the same as the central wavelength of the light emitted by the quantum dot layer 320. The quantum dot layer 320 includes two or more different types of quantum dots to form two or more different types of quantum dot vertical cavity surface emitting lasers 300.

[0057] This application proposes a method for manufacturing a full-color laser display device, taking the first vertical cavity surface emitting laser 211 as the first light emitting unit 210 as an example. The specific process can be referred to Figure 3This method combines precision optical component fabrication with advanced material deposition technology to achieve high-efficiency, high-purity, full-color laser output. First, a plurality of first vertical cavity surface emitting lasers (VCSELs) 211, comprising a first bottom reflector 220, an active layer 230, and a first top reflector 240, are fabricated through high-precision photolithography, coating, and substrate transfer processes. A substrate 100 is used as a rigid support substrate, and these VCSELs are arranged in an array according to a specific layout. A sophisticated quantum dot vertical cavity surface emitting laser (QDSEL) 300 construction process is implemented for some or all of the units in the VCSEL array. A quantum dot bottom reflector 310 is deposited on the selected VCSELs. This reflector must not only have high reflectivity to ensure efficient light energy recovery, but also possess surface properties compatible with the subsequent quantum dot layer 320. Subsequently, a quantum dot layer 320 comprising two or more different types of quantum dots is precisely deposited on the second bottom reflector 310 using quantum dot synthesis and deposition technology. These quantum dots are carefully designed and screened to respond to and convert specific wavelengths of light to form laser output in multiple colors, such as green and red. Finally, a quantum dot layer top reflector 330 is deposited on top of the quantum dot layer bottom reflector 310 and quantum dot layer 320 to complete the preparation of the optical resonant cavity. The wavelength of the resonantly amplified light precisely matches the central wavelength of the output light from the quantum dot layer 320, thereby maximizing the utilization of light energy within the resonant cavity and significantly enhancing laser intensity. Through these steps, a quantum dot VCSEL 300 is constructed, combining high-efficiency, high-purity, and multi-color laser output. By building the quantum dot VCSEL 300 based on the first vertical cavity surface emitting laser 211, the transition from a single light source to full-color laser output is achieved. The multi-type design of the quantum dot layer 320 ensures the output of multiple colors of laser light, including green and red, meeting the requirements of full-color display. By precisely designing the structure and parameters of the optical resonant cavity, precise control of the wavelength of the resonantly amplified light is achieved. This control not only improves the output intensity and directionality of the laser, but also ensures the efficient emission and color purity of the quantum dot layer 320. This manufacturing method is not only suitable for current full-color laser display devices, but also has high design flexibility and scalability. By adjusting parameters such as quantum dot type, quantity and arrangement, the laser performance and color expression can be further optimized to meet the needs of different application scenarios.

[0058] In the process of manufacturing a full-color laser display device, in order to precisely control the formation positions of different types of quantum dot vertical cavity surface emitting lasers 300 and eliminate interference between the different quantum dot vertical cavity surface emitting lasers 300, the steps of manufacturing different types of quantum dot vertical cavity surface emitting lasers 300 specifically include: before forming one type of quantum dot vertical cavity surface emitting laser 300, forming a mask 340 at a location outside the area where the quantum dot VCSEL 300 of that type is to be formed, and then forming the corresponding type of quantum dot vertical cavity surface emitting laser 300 on the basis of the mask 340 protecting other areas. Under the premise that the mask 340 protects the non-target area, the corresponding type of quantum dot material is precisely deposited in the exposed area where the quantum dot vertical cavity surface emitting laser 300 is to be formed. By controlling the deposition rate, thickness, type and concentration of the quantum dot material, the quality and performance of the quantum dot layer 320 are ensured to meet the expectations. After the deposition of the quantum dot layer 320 is completed, the quantum dot layer top reflector 330 is fabricated to seal the optical resonant cavity and protect the quantum dot layer 320. At this time, due to the presence of the mask 340 , the surface of the non-target area remains clean and undisturbed, which facilitates the subsequent production of other types of quantum dot vertical cavity surface emitting lasers 300 or the integration of other components on the substrate 100 that may be required.

[0059] exist Figure 3 In the specific process shown, a quantum dot layer bottom emitting mirror, a quantum dot layer, and a quantum dot layer top reflector are first deposited on the first light-emitting unit in the light-emitting array to prepare a green quantum dot vertical cavity surface emitting laser and a red bottom reflector. Then, a mask is deposited at the light exit hole of the prepared green quantum dot vertical cavity surface emitting laser. The mask is used to protect the light-emitting layer of the quantum dot VCSEL from the influence of photolithography, so as to avoid the degradation of the performance of the quantum dot light-emitting layer due to photolithography. After the mask deposition is completed, a quantum dot layer and a quantum dot layer top reflector are deposited on the red bottom reflector to prepare a red quantum dot vertical cavity surface emitting laser, and the mask is removed to obtain a red, green, and blue VCSEL full-color display. Of course, Figure 3 The specific process shown in is an option. In other specific preparations, you can also choose to first make a red light quantum dot vertical cavity surface emitting laser.

[0060] Specifically, the mask 340 is formed on the quantum dot layer top reflector 330 and the first top reflector 240 of the other types of quantum dot vertical cavity surface emitting lasers 211. By forming the mask 340 on the quantum dot layer top reflector 330 and (or) the first top reflector 240, the layout of the quantum dot vertical cavity surface emitting laser 300 can be more accurately controlled to ensure that each unit is accurately located at the predetermined position. At the same time, this layout method also increases the flexibility of the design, allowing us to adjust or modify the VCSEL structure of a specific area according to actual needs. Precise control of the mask 340 reduces the performance degradation caused by material diffusion or contamination, thereby improving the performance stability and consistency of each quantum dot vertical cavity surface emitting laser 300 unit.

[0061] Specifically, the center wavelength of the output light of the active layer 230 is 450 nm, and the output light of the quantum dot layer 320 includes light with center wavelengths of 520 nm and 630 nm respectively. The control of the relevant wavelengths is consistent with the above-mentioned related functions.

[0062] Specifically, the quantum dot layer 320 is first formed with an output light center wavelength of 520nm. Prioritizing the formation of a quantum dot layer 320 with an output light center wavelength of 520nm directly corresponds to the green light band, which is crucial for the color accuracy and richness of full-color laser display devices. The accurate reproduction of green light helps balance the brightness and saturation between the three primary colors of red, green, and blue, thereby presenting a more natural and vivid color effect. By precisely controlling the size and composition of the quantum dots, the optical properties of the quantum dot layer 320 can be finely controlled, ensuring that the quantum dot layer 320 emits light efficiently at specific wavelengths. By optimizing the interface quality between the quantum dot layer 320 and the reflector, the resonant amplification effect of the optical resonator is further improved, thereby enhancing the output intensity and directionality of the laser.

[0063] Specifically, the thickness of the quantum dot layer 320 is half the central wavelength of the light emitted from the quantum dot layer 320 (1 / 2λ0, where λ0 is the central wavelength of the emitted light). This thickness is set to half the wavelength of the light (1 / 2λ0, where λ0 is the central wavelength of the emitted light) based on careful calculations based on the principles of optical resonance. This design enables the quantum dot layer 320 to function as a half-wavelength node in the resonant cavity, achieving optimal resonance conditions with the upper and lower reflectors.

[0064] The technical solution of this application is described in detail below with a specific implementation method. The structural diagram of each step can be found in Figure 4 .

[0065] First, prepare a blue light VCSEL chip array, whose substrate can be selected from sapphire, silicon, copper, nitride and other substrates; the reflector of the blue light VCSEL chip can be a dielectric film DBR, nitride DBR, air gap DBR, grating, etc., with the reflectivity of the bottom reflector reaching more than 99.9% and the reflectivity of the top reflector ~99.8%; the active layer can be multiple quantum wells or quantum dots, and its structure can be a planar cavity or a convex cavity, and the light output can be selected from the n-side or p-side.

[0066] Secondly, photolithography or mask technology is used to deposit reflectors with central wavelengths of 520 nm and 630 nm on adjacent light-emitting holes of the blue VCSEL. The reflectors include dielectric film DBRs, nitride DBRs, or gratings, with a reflectivity of 99.8%. The size of the reflectors is larger than that of the blue VCSEL light-emitting hole.

[0067] Then, using spin coating and photolithography, green quantum dots are applied to the light exit aperture of a nearby blue VCSEL. By absorbing the excitation of the blue laser, they can pump green light with a central wavelength of 520 nm. To create a single-mode green VCSEL, the thickness of the green quantum dot layer (active layer) is 1 / 2λ0, where λ0 is the central wavelength of ~520 nm. The green quantum dot layer and the bottom reflector are similar in size.

[0068] Subsequently, a top reflector is deposited on the green quantum dots using a masking process. Together with the bottom reflector, it forms a resonant cavity, completing the fabrication of the green quantum dot VCSEL. The top reflector has a slightly lower reflectivity than the bottom reflector and is slightly larger than the green quantum dot layer to ensure it can encapsulate the dots. A chromium metal mask is then deposited on the top reflector to protect the quantum dots.

[0069] Furthermore, using the same process, a red quantum dot layer is coated on a reflector with a central wavelength of 630 nm. By absorbing the excitation of a blue laser, it can pump red light with a central wavelength of 630 nm. The thickness of the red quantum dot layer is 1 / 2λ0, where λ0 is the central wavelength, selected to be 630 nm. The red quantum dot layer and the bottom reflector are of similar size. The red and green quantum dot materials can be type I or type II, and the core-shell size is adjustable depending on the material. Subsequently, a top reflector is deposited on the red quantum dot layer using the same method, forming a resonant cavity with the bottom reflector to prepare a red quantum dot VCSEL. The emissivity of the top reflector is slightly lower than that of the bottom reflector, and the size of the top reflector is slightly larger than that of the red quantum dot layer. Finally, the mask metal Cr is removed by wet etching to obtain a laser chip with RGB emission, ultimately completing the preparation of a full-color laser display device.

[0070] The preparation process used in the above specific scheme is mainly based on photolithography and masking. Other similar methods can also be used to obtain corresponding quantum dots or blue light chips to achieve full-color display or full-color laser display, which is also within the scope of protection.

[0071] As can be seen from the foregoing, the present application proposes a high-efficiency, high-purity full-color laser display device and a manufacturing method thereof. The device consists of a substrate, a VCSEL array and various types of quantum dot VCSELs. The VCSEL array includes a plurality of independent and closely arranged first vertical cavity surface emitting lasers, each of which is equipped with a first bottom reflector, an active layer and a first top reflector to ensure vertical emission of the laser beam and efficient energy conversion. On part or all of the first VCSEL, a quantum dot VCSEL is constructed by depositing a second bottom reflector, a specific type of quantum dot layer and a second top reflector to form an optical resonant cavity. The wavelength of the resonantly amplified light is precisely matched with the central wavelength of the light emitted by the quantum dot layer, thereby achieving laser output of multiple colors.

[0072] Quantum dot VCSELs can consist of two or more types, each equipped with a quantum dot layer that emits light at different wavelengths, such as a green quantum dot VCSEL (with a central wavelength of 520nm) and a red quantum dot VCSEL (with a central wavelength of 630nm). Combined with the blue light that may come from the first VCSEL (if a blue laser is used), they cover and accurately represent the three primary colors of red, green, and blue, achieving full-color display. The central wavelength of the first VCSEL's light is 450nm, which facilitates energy absorption and conversion in the quantum dot VCSEL.

[0073] During the manufacturing process, high-precision photolithography, coating, and quantum dot synthesis and deposition technologies are used. Masks are used to protect non-target areas, and the formation position and type of quantum dot VCSELs are precisely controlled to ensure stable and consistent performance of each unit. The thickness of the quantum dot layer is designed to be half the central wavelength of the emitted light (1 / 2λ0, where λ0 is the central wavelength of the emitted light) to maximize the optical resonance effect and improve the laser emission intensity and directionality. The technical solution of this application not only simplifies the color conversion process in traditional display technology, but also significantly improves color saturation, accuracy, and color gamut coverage, while maintaining the advantages of low power consumption and high beam collimation, making it suitable for a variety of application scenarios.

[0074] The above is only a specific implementation of the present application. Any other improvements made based on the concept of the present application are considered to be within the scope of protection of the present application.

Claims

1. A quantum dot vertical cavity surface emitting laser, characterized in that: It includes an excitation light source, a quantum dot layer bottom reflector, a quantum dot layer and a quantum dot layer top reflector, wherein the quantum dot layer bottom reflector, the quantum dot layer and the quantum dot layer top reflector are stacked in sequence; The quantum dot layer includes light-converting luminescent quantum dots, which receive light from an excitation light source and convert it into light of another wavelength. An optical resonant cavity is formed between the bottom reflector of the quantum dot layer and the top reflector of the quantum dot layer. The wavelength of light resonated and amplified by the optical resonant cavity is the same as the central wavelength of the output light of the quantum dot layer. The quantum dot layer bottom reflector is formed on the excitation light source, and the light from the excitation light source enters the optical resonant cavity through the quantum dot layer bottom reflector.

2. The quantum dot vertical cavity surface emitting laser according to claim 1, characterized in that: The light-converting luminescent quantum dots are down-converting luminescent quantum dots.

3. The quantum dot vertical cavity surface emitting laser according to claim 2, characterized in that: The light emitted by the excitation light source is blue light or ultraviolet light, and the output light of the down-conversion luminescent quantum dots is green light or red light.

4. The quantum dot vertical cavity surface emitting laser according to claim 1, characterized in that: The excitation light source includes a vertical cavity surface emitting laser structure.

5. A full-color laser display device, characterized in that: It includes a substrate, a light-emitting array, and a quantum dot vertical cavity surface emitting laser; The light emitting array includes a plurality of first light emitting units arranged in an array; forming the quantum dot vertical cavity surface emitting lasers on part or all of the first light-emitting units, respectively; each quantum dot vertical cavity surface emitting laser comprises a quantum dot layer bottom reflector, a quantum dot layer, and a quantum dot layer top reflector; an optical resonant cavity is formed between the quantum dot layer bottom reflector and the quantum dot layer top reflector; the wavelength of light resonated and amplified by the optical resonant cavity is the same as the central wavelength of the output light of the quantum dot layer; Wherein, there are two or more different types of quantum dot vertical cavity surface emitting lasers, and different types of quantum dot vertical cavity surface emitting lasers have different quantum dot layers.

6. The full-color laser display device according to claim 5, characterized in that: The first light emitting units are first vertical cavity surface emitting lasers, and each of the first vertical cavity surface emitting lasers includes a first bottom reflecting mirror, an active layer, and a first top reflecting mirror.

7. The full-color laser display device according to claim 6, characterized in that: The first top reflector and the quantum dot layer bottom reflector are in the same layer structure.

8. The full-color laser display device according to claim 6, characterized in that: The first vertical cavity surface emitting laser is a blue laser or an ultraviolet laser.

9. The full-color laser display device according to claim 8, characterized in that: The output light of the quantum dot layer in the quantum dot vertical cavity surface emitting laser includes green light and red light.

10. The full-color laser display device according to claim 9, characterized in that: The center wavelength of the output light of the first vertical cavity surface emitting laser is 450 nm, the center wavelength of the green light is 520 nm, and the center wavelength of the red light is 630 nm.

11. The full-color laser display device according to claim 10, characterized in that: The number of first VCSELs that do not form the quantum dot VCSEL, the number of quantum dot VCSELs emitting green light, and the number of quantum dot VCSELs emitting red light are the same.

12. The full-color laser display device according to claim 6, characterized in that: The quantum dot vertical cavity surface emitting laser is formed on the light exit hole of the first vertical cavity surface emitting laser.

13. The full-color laser display device according to claim 12, characterized in that: The size of the quantum dot layer bottom reflector is larger than the size of the light exit hole of the first vertical cavity surface emitting laser.

14. The full-color laser display device according to claim 13, characterized in that: The size of the quantum dot layer is the same as the size of the bottom reflector of the quantum dot layer, and the size of the top reflector of the quantum dot layer is larger than the size of the quantum dot layer.

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