Downstream plasma device for double-sided panel processing

Abstract

The utility model discloses a downstream plasma device for processing a double-side panel, which belongs to the technical field of plasma processing, and comprises a vacuum cavity in which a substrate is fixed; the two grounding electrodes are arranged on the two sides of the substrate respectively, the two grounding electrodes are parallel to the substrate, and a plurality of through holes are formed in the two grounding electrodes; and the two electric connection electrodes are arranged on the sides, away from the substrate, of the two grounding electrodes respectively. When the downstream plasma device for processing the double-side panel is used for processing a sensitive device, no damage is caused to the surface of a product, and the downstream plasma device has the advantage of selective etching and is very effective for removing organic pollution. The grounding electrodes and the power connection electrodes are arranged on the two sides of the substrate, one-time double-face processing can be achieved, the production efficiency can be improved, the production cost is reduced, and double-face processing is uniform.

Description

Technical Field

[0001] The utility model relates to the technical field of plasma processing, in particular to a downstream plasma device for double-sided panel processing. Background Art

[0002] In the field of printed circuit board production and processing, plasma treatment systems are important equipment for improving the surface performance of circuit boards. Their main functions include decontamination, cleaning, activation, and modification of PCB surfaces to ensure good adhesion and electrical properties.

[0003] Plasma treatment systems are widely used for surface activation, cleaning, etching, and thin film deposition. Plasma treatment primarily utilizes reactive species, including ions and free radicals, to physically and chemically affect surfaces, thereby achieving surface treatment. However, due to the involvement of ions and UV light in traditional processes, plasma treatment can damage sensitive components. Utility Model Content

[0004] The purpose of the present invention is to solve at least one of the technical problems existing in the prior art. To this end, the present invention proposes a downstream plasma device for double-sided panel processing, which can avoid damage to sensitive components.

[0005] According to an embodiment of the present invention, a downstream plasma device for double-sided panel processing includes: a vacuum chamber, in which a substrate is fixed; two grounding electrodes, which are respectively arranged on both sides of the substrate, and the two grounding electrodes are arranged parallel to the substrate, and multiple through holes are opened on the two grounding electrodes; two power electrodes, which are respectively arranged on the side of the two ground electrodes away from the substrate.

[0006] The downstream plasma device for double-sided panel processing according to the embodiments of the present invention has at least the following beneficial effects: Because free radical surface treatment is a purely chemical process, sensitive components can be treated using the downstream plasma device without causing any damage to the product surface. Furthermore, the device exhibits the advantage of selective etching, making it highly effective in removing organic contamination. The provision of grounding and power electrodes on both sides of the substrate enables simultaneous double-sided processing, which improves production efficiency, reduces production costs, and ensures uniform double-sided processing.

[0007] According to some embodiments of the present invention, the cross section of the through hole is circular.

[0008] According to some embodiments of the present invention, the cross-section of the through hole is square.

[0009] According to some embodiments of the present invention, the axis of the through hole is perpendicular to the substrate.

[0010] According to some embodiments of the present invention, the axis of the through hole is tilted relative to the substrate.

[0011] Additional aspects and advantages of the present invention will be given in part in the following description and will become apparent from the following description or learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The present invention will be further described below with reference to the accompanying drawings and embodiments;

[0013] Figure 1 It is a schematic structural diagram of a downstream plasma device for double-sided panel processing according to an embodiment of the present invention.

[0014] Reference numerals:

[0015] Vacuum chamber 100; substrate 110;

[0016] Ground electrode 200; through hole 210;

[0017] The powered electrode 300 . DETAILED DESCRIPTION

[0018] This section will describe in detail the specific embodiments of the present invention. The preferred embodiments of the present invention are shown in the accompanying drawings. The purpose of the accompanying drawings is to supplement the description of the text part of the specification with graphics, so that people can intuitively and vividly understand each technical feature and the overall technical solution of the present invention, but it cannot be understood as a limitation on the scope of protection of the present invention.

[0019] In the description of the present invention, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limitations on the present invention.

[0020] In the description of this utility model, "several" means one or more, "many" means more than two, "greater than," "less than," and "exceed" are understood to exclude the number itself, while "above," "below," and "within" are understood to include the number itself. The use of "first" and "second" in the description is solely for the purpose of distinguishing technical features and is not to be construed as indicating or implying relative importance, implicitly specifying the number of the indicated technical features, or implicitly specifying the order of the indicated technical features.

[0021] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0022] refer to Figure 1 A downstream plasma device for double-sided panel processing according to an embodiment of the present invention is described.

[0023] like Figure 1 As shown, the downstream plasma device for double-sided panel processing according to an embodiment of the present invention includes: a vacuum chamber 100, in which a substrate 110 is fixed; two grounding electrodes 200, which are respectively arranged on both sides of the substrate 110, and are both arranged parallel to the substrate 110, and each of the two grounding electrodes 200 is provided with a plurality of through holes 210; and two power electrodes 300, which are respectively arranged on the side of the two ground electrodes 200 away from the substrate 110.

[0024] When processing sensitive devices such as EEPROM (Electrically Erasable Programmable Read-Only Memory) or ASICs (Application-Specific Integrated Circuits), UV exposure can erase pre-programmed devices, and ion and electron exposure can damage sensitive nodes. Downstream plasma treatment or ion-free plasma can avoid these issues that may occur during the plasma cleaning process, allowing device surface treatment, including surface cleaning, activation, etching, and thin film deposition, without potentially damaging sensitive devices.

[0025] like Figure 1 As shown, two powered electrodes 300 and two ground electrodes 200 are disposed within the vacuum chamber 100. The two powered electrodes 300 are positioned on either side of the substrate 110, and the two ground electrodes 200 are positioned between the two powered electrodes 300 and the substrate 110. Multiple through-holes 210 are defined in the ground electrodes 200. A plasma glow region forms between the ground electrodes 200 and the powered electrodes 300 on the same side. During plasma discharge, a glow is generated in the plasma glow region between the powered and ground electrodes 300. Ions generated as they diffuse through the perforated ground electrodes 200 are captured and filtered out by the perforated ground electrodes 200. The rate of ion capture depends on the aperture and distribution density of the through-holes 210 in the ground electrodes 200. Free radicals, being uncharged, can pass through the through-holes 210 and reach the surface of the substrate 110 being processed, thereby treating the surface.

[0026] Because free radical surface treatment is a purely chemical process, treating sensitive components with the downstream plasma device used for double-sided panel processing does not damage the product surface. Furthermore, the selective etching method is very effective in removing organic contamination. Providing ground electrodes 200 and power electrodes 300 on both sides of substrate 110 enables simultaneous double-sided processing, improving production efficiency, reducing production costs, and ensuring uniform double-sided processing.

[0027] It is conceivable that the cross-section of the through hole 210 may be in various shapes, such as circular or square, and the axis of the through hole 210 may be perpendicular to the substrate 110 or tilted relative to the substrate 110. The shape and tilt angle of the through hole 210 are adjusted and optimized according to the desired ratio of captured samples.

[0028] The embodiments of the present invention are described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the technical field without departing from the purpose of the present invention.

Claims

1. A downstream plasma device for double-sided panel processing, characterized in that include: a vacuum chamber, wherein a substrate is fixed in the vacuum chamber; Two grounding electrodes, the two grounding electrodes are respectively arranged on both sides of the substrate, the two grounding electrodes are arranged parallel to the substrate, and a plurality of through holes are opened on the two grounding electrodes; Two power electrodes are respectively arranged on one side of the two ground electrodes away from the substrate.

2. The downstream plasma device for double-sided panel processing according to claim 1, characterized in that The cross section of the through hole is circular.

3. The downstream plasma device for double-sided panel processing according to claim 1, characterized in that The cross section of the through hole is square.

4. The downstream plasma device for double-sided panel processing according to claim 1, characterized in that The axis of the through hole is perpendicular to the substrate.

5. The downstream plasma device for double-sided panel processing according to claim 1, characterized in that The axis of the through hole is tilted relative to the substrate.

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