Air exhaust structure and processing equipment of semiconductor device

Abstract

The utility model discloses an air exhaust structure and processing equipment of a semiconductor device. The air exhaust structure is located in a reaction cavity and comprises an air exhaust plate, a plurality of air exhaust holes are formed in the surface of the air exhaust plate; the flow isolation assembly is located between the air exhaust plate and an air exhaust channel on the bottom side of the reaction cavity, the flow isolation assembly comprises multiple flow isolation layers, and the hole position structure of a flow guide hole in each flow isolation layer is related to the distance of the air exhaust channel and used for reducing air exhaust flow resistance between the air exhaust plate and the air exhaust channel in a layered mode. Through the air exhaust structure, the air exhaust flow resistance in the thin film deposition process can be adjusted, and the air exhaust uniformity of the wafer surface can be improved, so that the phenomenon that the uniformity of the process precision is influenced due to deviation of thin film process data in the air exhaust process caused by eccentricity of the air exhaust opening is avoided.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor device processing, in particular to an air extraction structure and semiconductor device processing equipment. Background Art

[0002] Chemical Vapor Deposition (CVD) is a technology that forms a thin film coating of metal or compound on the substrate surface through the interaction between mixed gases or between mixed gases and the substrate surface under certain temperature conditions, thereby modifying the material surface to meet special performance requirements such as wear resistance, oxidation resistance, corrosion resistance, and specific electrical, optical, and tribological properties.

[0003] During the chemical vapor deposition process, the gas in the reaction chamber can be partially extracted through the exhaust channel connecting the inside and outside of the reaction chamber, which is equivalent to reducing the volume of the reaction area, thereby increasing the reaction rate and thus improving the equipment production capacity.

[0004] However, in existing semiconductor device processing equipment, the exhaust channel is typically located at the bottom side of the reaction chamber. Due to the eccentricity of the exhaust port, this bottom-side extraction method can easily lead to asymmetric overall process gas flow distribution within the reaction chamber, especially above the wafer, during the extraction process. This can cause deviations in the deposited thin film process data, thereby affecting the uniformity of processing precision.

[0005] In order to solve the above-mentioned problems existing in the prior art, this field urgently needs an improved exhaust technology that can adjust the exhaust flow resistance during the thin film deposition process and improve the uniformity of exhaust on the wafer surface, thereby avoiding the offset of thin film process data during the exhaust process due to the eccentricity of the exhaust port, affecting the uniformity of the process accuracy. Utility Model Content

[0006] The following is a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceivable aspects and is neither intended to identify key or critical elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that will be provided later.

[0007] In order to overcome the above-mentioned defects of the prior art, the utility model provides an exhaust structure and a processing equipment for semiconductor devices, which can adjust the exhaust flow resistance during the exhaust process after the thin film deposition process is completed, and improve the uniformity of exhaust on the wafer surface, thereby avoiding the offset of the thin film process data during the exhaust process due to the eccentricity of the exhaust port, affecting the uniformity of the process accuracy.

[0008] Specifically, the exhaust structure provided according to the first aspect of the present invention is located in the reaction chamber, and the exhaust structure includes: an exhaust plate, whose surface includes a plurality of exhaust holes; and a flow isolation component, which is located between the exhaust plate and the exhaust channel on the side of the bottom of the reaction chamber. The flow isolation component includes multiple layers of flow isolation layers, and the hole position structure of the guide holes on each of the flow isolation layers is related to the distance of the exhaust channel, which is used to reduce the exhaust flow resistance from the exhaust plate to the exhaust channel in a layered manner.

[0009] Furthermore, in some embodiments of the present invention, the multi-layered flow isolation layer includes multiple concentric flow isolation rings with different radii, and an annular flow isolation cavity is formed between two adjacent flow isolation rings, so that the gas entering the outer flow isolation cavity is annularly diffused before entering the inner flow isolation cavity.

[0010] Furthermore, in some embodiments of the present invention, the hole density of the guide holes on each of the flow isolation rings is positively correlated with the distance of the air extraction channel.

[0011] Furthermore, in some embodiments of the present invention, the diameter of the guide holes on each of the flow isolation rings is positively correlated with the distance of the air extraction channel.

[0012] Furthermore, in some embodiments of the present invention, the concentric isolation rings are arranged on the lower surface of the exhaust plate, and the exhaust holes on the exhaust plate are located on the outside of the isolation ring with the largest radius among the concentric isolation rings, so that the upper gas flows layer by layer through the exhaust holes to the multiple concentric isolation rings with different radii.

[0013] Furthermore, in some embodiments of the present invention, the multi-layer flow isolation layer includes a plurality of stacked flow isolation plates, wherein a flow isolation plane cavity is formed between the flow isolation plate and the adjacent exhaust plate or another flow isolation plate, so that gas entering the flow isolation plane cavity of the upper layer diffuses in a plane before entering the flow isolation plane cavity of the lower layer.

[0014] Furthermore, in some embodiments of the present invention, the hole density of the flow guide holes on at least one first flow partition of the flow partitions is positively correlated with the distance of the air extraction channel.

[0015] Furthermore, in some embodiments of the present invention, the area on the first flow partition covering the air extraction channel is sealed.

[0016] Furthermore, in some embodiments of the present invention, at least one second flow partitioner among the flow partitioners is located between the first flow partitioner and the air extraction plate, and the aperture of the flow guide hole on the second flow partitioner is positively correlated with the distance of the air extraction channel.

[0017] In addition, the processing equipment of the above-mentioned semiconductor device provided according to the second aspect of the present invention includes: a reaction chamber, which holds wafers inside and is used for performing a thin film deposition process; an exhaust channel, located on the bottom side of the reaction chamber, for discharging the gas in the reaction chamber; and the above-mentioned exhaust structure provided by the first aspect of the present invention, which is located in the reaction chamber and is used to reduce the exhaust flow resistance between the top of the wafer and the exhaust channel in layers during the thin film deposition process. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or characteristics may have the same or similar reference numerals.

[0019] Figure 1 A schematic structural diagram of a semiconductor device processing device provided according to some embodiments of the present utility model is shown;

[0020] Figure 2 A front schematic diagram of an air extraction structure provided according to some embodiments of the present utility model is shown;

[0021] Figure 3 Shown Figure 2 The reverse side schematic diagram of the air extraction structure shown;

[0022] Figure 4 Shown Figure 3 The reverse dimension diagram of the air extraction structure shown;

[0023] Figure 5 A schematic structural diagram of an air extraction structure provided according to other embodiments of the present utility model is shown;

[0024] Figure 6 Shown Figure 5 A schematic structural diagram of an air extraction plate of an air extraction structure shown;

[0025] Figure 7 Shown Figure 5 A schematic structural diagram of the first flow partition in the air extraction structure shown; and

[0026] Figure 8 Shown Figure 5 Schematic diagram of the structure of the second flow partition in the air extraction structure shown.

[0027] Reference numerals:

[0028] 100 Semiconductor device processing equipment;

[0029] 110 reaction chamber;

[0030] 120 exhaust channel;

[0031] 130 heating plate;

[0032] 200, 500 exhaust structure;

[0033] 210, 510 exhaust plate;

[0034] 220, 520 flow isolation components;

[0035] 211, 511 air extraction holes;

[0036] 230 First isolation ring;

[0037] 240 Second isolation ring;

[0038] 250 The third isolation ring;

[0039] 231 First flow chamber;

[0040] 241 Second flow chamber;

[0041] 251 Third septal cavity;

[0042] 260, 560 diversion holes;

[0043] 270 center ring;

[0044] 280 diversion channel;

[0045] 530 First flow divider;

[0046] 540 Second flow divider;

[0047] 531 First flow-isolating plane cavity;

[0048] 541 second flow-isolating plane cavity; and

[0049] 551Third flow-isolating plane cavity. DETAILED DESCRIPTION

[0050] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and functions of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this utility model are limited to this implementation. On the contrary, the purpose of introducing the utility model in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide an in-depth understanding of the present invention, the following description will contain many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0051] In the description of this utility model, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0052] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood to refer to the orientations depicted in that section and the accompanying drawings. These relative terms are used solely for convenience of description and do not necessarily imply that the devices described herein must be manufactured or operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0053] It is understood that although the terms "first," "second," "third," etc. may be used herein to describe various components, regions, layers, and / or portions, these components, regions, layers, and / or portions should not be limited by these terms, and these terms are merely used to distinguish different components, regions, layers, and / or portions. Thus, a first component, region, layer, and / or portion discussed below may be referred to as a second component, region, layer, and / or portion without departing from some embodiments of the present invention.

[0054] As mentioned above, in existing semiconductor device processing equipment, the exhaust channel is typically located at the bottom side of the reaction chamber. Because the exhaust port of the exhaust channel is eccentric, this bottom-side extraction method can easily lead to asymmetric overall process gas flow distribution within the reaction chamber, especially above the wafer, during the exhaust process. This can cause deviations in the deposited thin film process data, further affecting the uniformity of processing precision.

[0055] In order to solve the above-mentioned problems existing in the prior art, the utility model provides an exhaust structure and a processing equipment for semiconductor devices, which can adjust the exhaust flow resistance during the exhaust process after the thin film deposition process is completed, and improve the uniformity of exhaust on the wafer surface, thereby avoiding the offset of the thin film process data during the exhaust process due to the eccentricity of the exhaust port, affecting the uniformity of the process accuracy.

[0056] In some non-limiting embodiments, the above-mentioned exhaust structure provided by the first aspect of the present invention can be configured in the above-mentioned semiconductor device processing equipment provided by the second aspect of the present invention.

[0057] The following will describe the working principle of the above-mentioned exhaust structure in conjunction with some embodiments of semiconductor device processing equipment. Those skilled in the art will understand that these embodiments of semiconductor device processing equipment are merely some non-limiting implementation methods provided by the present invention, and are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit the full working mode or full function of the exhaust structure. Similarly, the exhaust structure is also only a non-limiting implementation method provided by the present invention and does not constitute a limitation on the other configuration objects in these semiconductor device processing equipment.

[0058] Please see Figure 1 , Figure 1 A schematic structural diagram of a semiconductor device processing device provided according to some embodiments of the present utility model is shown.

[0059] like Figure 1 As shown, in some embodiments of the present invention, a processing equipment 100 for semiconductor devices may include a reaction chamber 110, which is provided with a heating plate 130 inside for holding wafers for thin film deposition process. An exhaust channel 120 is provided on the side of the bottom of the reaction chamber 110, and an exhaust pump can be connected to the outside of the exhaust channel to extract the process gas in the reaction chamber 110 during the process or after the process is completed. Inside the reaction chamber 110, an exhaust structure 200 may also be included between the bottom of the heating plate 130 and the exhaust channel 120. In the exhaust process during the thin film deposition process, the exhaust flow resistance between the heating plate 130 and the exhaust channel 120 can be reduced in layers by the exhaust structure 200, thereby balancing the air flow distribution above the wafer surface.

[0060] Specifically, if Figure 1As shown, the gas extraction structure 200 may include a gas extraction plate 210, whose surface may include a plurality of gas extraction holes 211; a flow barrier assembly 220, which may be located between the gas extraction plate 210 and the gas extraction channel 120 on the side of the bottom of the reaction chamber 110. The flow barrier assembly 220 may include multiple flow barrier layers. The hole structure of the guide holes on each flow barrier layer may be related to the distance from the gas extraction channel 120, thereby reducing the gas extraction flow resistance between the gas extraction plate 210 and the gas extraction channel 120 in a layered manner.

[0061] Please refer to Figure 2 and Figure 3 Common understanding, Figure 2 A front view of an air extraction structure provided according to some embodiments of the present utility model is shown. Figure 3 Shown Figure 2 The reverse side schematic diagram of the exhaust structure is shown.

[0062] like Figure 3 As shown, in some optional embodiments of the present invention, the multi-layered flow isolation layer in the flow isolation assembly 220 may include multiple concentric flow isolation rings with different radii, and an annular flow isolation cavity may be formed between two adjacent flow isolation rings to allow the gas entering the outer flow isolation cavity to diffuse in an annular manner before entering the inner flow isolation cavity.

[0063] Specifically, you can Figure 2 and Figure 3 For example, the flow partition assembly 220 may include three concentric flow partitions of different radii: a first flow partition 230 with the largest radius and located at the outermost side; a second flow partition 240 with a medium radius and located at the center; and a third flow partition 250 with the smallest radius and located at the innermost side. The three concentric flow partitions may be disposed on the lower surface of the extraction plate 210, and the extraction holes 211 on the extraction plate 210 may be located outside the first flow partition 230, which has the largest radius among the concentric flow partitions. This allows gas from above to flow layer by layer through the extraction holes 211 to the multiple concentric flow partitions of different radii. Alternatively, the extraction holes 211 may be provided as a plurality of elongated strips disposed on the edge of the extraction plate 210, thereby increasing the single gas flow rate flowing through each extraction hole 211 to the flow partition assembly 220 below.

[0064] like Figure 3As shown, process gas flowing downward from the extraction holes 211 on the edge of the extraction plate 210 can first enter the annular first isolation chamber 231 formed by the first and second isolation rings 230, 240, through the guide holes 260 in the first isolation ring 230. The process gas then diffuses along the first isolation chamber 231, thereby extending the residence time of the process gas in the first isolation chamber 231 and reducing the primary flow resistance of the process gas during extraction. After evenly diffusing within the first isolation chamber 231, the process gas can then enter the annular second isolation chamber 241 formed by the second and third isolation rings 240, 250, located inside the first isolation chamber 231, through the guide holes 260 in the second isolation ring 240. Similarly, the process gas can continue to diffuse along the second isolation chamber 241, extending its residence time in the second isolation chamber 241 and reducing the secondary flow resistance of the process gas during extraction. After evenly diffusing within the second isolation chamber 241, the process gas can then enter the annular third isolation chamber 251, located inside the second isolation chamber 241 and formed by the third isolation ring 250 and a center ring 270 for inserting the base of the heating plate 130, through the guide holes 260 in the third isolation ring 250. This reduces the flow resistance of the process gas during a third exhaust process. Finally, the process gas, evenly distributed within the third isolation chamber 251 after diffusion, can flow into the exhaust channel 120 via the guide channel 280.

[0065] Those skilled in the art will appreciate that the above-described flow isolation assembly comprising three concentric isolation rings is merely a non-limiting embodiment of the present invention, intended to clearly demonstrate the main concept of the present invention and provide a specific solution that is convenient for the public to implement, and is not intended to limit the scope of protection of the present invention. Alternatively, in other embodiments, those skilled in the art may also increase or decrease the number of isolation rings having flow guide holes 260 distributed therein, taking into account the size of the equipment, to achieve multi-layer exhaust isolation of the process gas, thereby achieving the technical effect of reducing exhaust flow resistance.

[0066] Furthermore, optionally, the hole density of the guide holes 260 on each flow isolation ring can be positively correlated with the distance from the exhaust channel 120, that is, the hole density increases with the increase of the distance between the guide holes 260 and the exhaust channel 120, thereby accelerating the exhaust rate of the process gas in the area away from the exhaust channel 120, but reducing the exhaust rate of the process gas in the area close to the exhaust channel 120, which is beneficial to balancing the gas flow resistance of the exhaust path at different distances from the heating plate 130 to the exhaust channel 120, thereby uniformly distributing the airflow in various areas above the wafer in the reaction chamber 110 during exhaust.

[0067] Specifically, see Figure 4 , Figure 4 Shown Figure 3The reverse dimension diagram of the air extraction structure is shown in FIG. Figure 4 As shown, since one side of the guide channel 280 is close to the exhaust channel 120, the guide holes 260 on the flow isolation rings close to the guide channel 280 are arranged more sparsely, and the guide holes 260 on the flow isolation rings away from the guide channel 280 are arranged more densely, that is, Figure 4 The angle α3 between adjacent hole positions is greater than α2 and greater than α1, so that the air flow resistance at positions at different distances from the air extraction channel 120 can be balanced.

[0068] In some preferred embodiments, the aperture size of the guide holes 260 on each of the spacer rings may also be positively correlated with the distance from the exhaust channel 120, i.e., the aperture size increases as the distance between the guide holes 260 and the exhaust channel 120 increases. In other words, the aperture size of the guide holes 260 on each of the spacer rings closer to the exhaust channel 120 is smaller, while the aperture size of the guide holes 260 on each of the spacer rings farther from the exhaust channel 280 is larger. This can further increase the pumping rate of process gases in areas farther from the exhaust channel 120, while reducing the pumping rate of process gases in areas closer to the exhaust channel 120, thereby facilitating uniform gas flow distribution across various areas above the wafers within the reaction chamber 110 during pumping.

[0069] In addition, the present invention also provides another embodiment, please refer to Figure 5 , Figure 5 A schematic structural diagram of an air extraction structure provided according to other embodiments of the present utility model is shown.

[0070] like Figure 5 As shown, in other embodiments of the present invention, the multi-layer flow isolation layer in the flow isolation assembly 520 may include multiple stacked flow isolation plates, such as a first flow isolation plate 530 and a second flow isolation plate 540. Furthermore, a flow isolation plane cavity may be formed between the flow isolation plate and its adjacent pumping plate 510 or another flow isolation plate, so that gas entering the upper flow isolation plane cavity diffuses in a plane before entering the lower flow isolation plane cavity.

[0071] Specifically, please see Figure 6 , Figure 6 Shown Figure 5 The schematic diagram of the structure of the exhaust plate of the exhaust structure is shown in FIG. Figure 5 and Figure 6 As shown, the edge of the uppermost exhaust plate 510 in the exhaust structure 500 may be provided with a plurality of relatively large exhaust holes 511 to allow the process gas above to flow downward to the flow isolation assembly 520 through the exhaust holes 511 .

[0072] Continue as Figure 5As shown, process gas flowing downward from the extraction holes 511 on the edge of the extraction plate 510 can enter the second planar flow isolation cavity 541 formed between the extraction plate 510 and the second flow isolation plate 540 below it, and diffuse along the plane of the second planar flow isolation cavity 541, thereby extending the residence time of the process gas in the second planar flow isolation cavity 541 and reducing the flow resistance of the process gas during primary extraction. After uniformly diffusing within the second planar flow isolation cavity 541, the process gas can enter the first planar flow isolation cavity 531 below the second planar flow isolation cavity 541, formed between the second planar flow isolation cavity 540 and the first planar flow isolation plate 530 below it, through the guide holes 560 in the second flow isolation plate 540. Similarly, the process gas can continue to diffuse along the plane of the first planar flow isolation cavity 531, thereby extending the residence time of the process gas in the first planar flow isolation cavity 531 and reducing the flow resistance of the process gas during secondary extraction. After evenly diffusing within the first planar flow isolation cavity 531, the process gas can then enter the third planar flow isolation cavity 551 below the first planar flow isolation cavity 531, formed by the first planar flow isolation cavity 530 and the bottom of the reaction chamber 110, through the flow guide holes 560 in the first planar flow isolation plate 530. This reduces the flow resistance of the process gas through a third pumping operation. Finally, the process gas, evenly distributed within the third planar flow isolation cavity 551 after diffusion, can flow into the pumping channel 120.

[0073] Those skilled in the art will appreciate that the aforementioned flow isolation assembly comprising two stacked flow isolation plates is merely a non-limiting embodiment of the present invention, intended to clearly demonstrate the main concepts of the present invention and provide a specific solution that is convenient for public implementation, and is not intended to limit the scope of protection of the present invention. Alternatively, in other embodiments, those skilled in the art may also increase or decrease the number of flow isolation plates with flow guide holes, taking into account the equipment size, to achieve multi-layered exhaust isolation of the process gas, thereby achieving the technical effect of reducing exhaust flow resistance.

[0074] Furthermore, optionally, the hole density of the flow guide holes 560 on at least one of the first flow partitions 530 may be positively correlated with the distance from the exhaust channel 120, i.e., the hole density increases as the distance between the flow guide holes 560 and the exhaust channel 120 increases. In other words, the more sparsely spaced the flow guide holes 560 on the first flow partition 530 near the exhaust channel 120, the more densely spaced the flow guide holes 560 on the first flow partition 530 away from the exhaust channel 120. This can increase the exhaust rate of process gases in areas away from the exhaust channel 120, while reducing the exhaust rate of process gases in areas near the exhaust channel 120. This facilitates uniform gas flow distribution across various areas above the wafers within the reaction chamber 110 during exhaust.

[0075] Preferably, see Figure 7 , Figure 7Shown Figure 5 The schematic diagram of the structure of the first flow partition in the air extraction structure is shown. Figure 5 and Figure 7 As shown, the guide holes 560 on the first flow partition 530 are evenly distributed. However, the area I of the first flow partition 530 covering the exhaust channel 120 is closed, that is, no guide holes 560 are provided in the area I, thereby further increasing the exhaust flow resistance above the exhaust channel 120 and reducing the exhaust flow velocity above the exhaust channel 120.

[0076] Furthermore, optionally, the diameter of the guide holes 560 on at least one of the second flow partitioners 540 located between the first flow partitioner 530 and the gas extraction plate 510 may be positively correlated with the distance from the gas extraction channel 120. That is, the diameter of the guide holes 560 increases as the distance between the guide holes 560 and the gas extraction channel 120 increases. In other words, the diameter of the guide holes 560 on the second flow partitioner 540 located near the top of the gas extraction channel 120 decreases, while the diameter of the guide holes 560 on the second flow partitioner 540 located far from the top of the gas extraction channel 120 increases. This further increases the pumping rate of process gases in areas away from the gas extraction channel 120 while reducing the pumping rate of process gases in areas near the gas extraction channel 120. This helps balance the gas flow resistance of the gas extraction paths at different distances from the heating plate 130 to the gas extraction channel 120, thereby achieving uniform gas flow distribution across various areas above the wafers within the reaction chamber 110 during pumping.

[0077] Specifically, see Figure 8 , Figure 8 Shown Figure 5 The schematic diagram of the structure of the second flow partition in the air extraction structure is shown in FIG. Figure 8 As shown, the second flow divider 540 is evenly distributed with multiple rows of flow guide holes 560, and the angles between two adjacent rows of flow guide holes 560 can be the same, both γ. The flow guide holes 560 in region II of the second flow divider 540, located directly above the air extraction channel 120, have the smallest aperture β1. As they gradually move away from the air extraction channel 120, the corresponding flow guide holes 560 have larger apertures, i.e., aperture β2 is larger than aperture β1, aperture β3 is larger than aperture β2, and aperture β4 is larger than aperture β3. This balances the air extraction flow resistance at locations at different distances from the air extraction channel 120.

[0078] Furthermore, in some embodiments of the present invention, both the exhaust structures 200 and 500 in the semiconductor device processing equipment 100 can be detachable. Optionally, the multiple flow partitions in the flow partition assembly 520 in the exhaust structure 500 can also be detachable, thereby facilitating replacement and cleaning of the flow partitions.

[0079] To sum up, the utility model provides an exhaust structure and a processing equipment for semiconductor devices, which can adjust the exhaust flow resistance during the exhaust process after the thin film deposition process is completed, improve the uniformity of exhaust on the wafer surface, and make the air flow distribution above the wafer surface uniformly symmetrical during exhaust, thereby avoiding the offset of the thin film process data during the exhaust process due to the eccentricity of the exhaust port, affecting the uniformity of the process accuracy.

[0080] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas extraction structure located in a reaction chamber, characterized in that: The air pumping structure comprises: an air extraction plate, the surface of which includes a plurality of air extraction holes; and A flow isolation component is located between the exhaust plate and the exhaust channel on the side of the bottom of the reaction chamber. The flow isolation component includes multiple flow isolation layers. The hole structure of the guide holes on each of the flow isolation layers is related to the distance of the exhaust channel, which is used to reduce the exhaust flow resistance from the exhaust plate to the exhaust channel in a layered manner.

2. The air extraction structure according to claim 1, wherein: The multi-layer isolation layer includes a plurality of concentric isolation rings with different radii, and an annular isolation cavity is formed between two adjacent isolation rings, so as to allow the gas entering the outer isolation cavity to diffuse in an annular manner before entering the inner isolation cavity.

3. The air extraction structure according to claim 2, characterized in that: The hole density of the guide holes on each of the flow isolation rings is positively correlated with the distance of the air extraction channel.

4. The air extraction structure according to claim 2 or 3, characterized in that: The aperture size of the guide holes on each of the flow isolation rings is positively correlated with the distance of the air extraction channel.

5. The air extraction structure according to claim 2, wherein: The concentric isolation rings are arranged on the lower surface of the air extraction plate, and the air extraction holes on the air extraction plate are located outside the isolation ring with the largest radius among the concentric isolation rings, so that the upper gas flows layer by layer to the multiple concentric isolation rings with different radii through the air extraction holes.

6. The air extraction structure according to claim 1, wherein: The multi-layer flow isolation layer includes a plurality of stacked flow isolation plates, wherein a flow isolation plane cavity is formed between the flow isolation plate and the adjacent exhaust plate or another flow isolation plate, so as to allow the gas entering the flow isolation plane cavity of the upper layer to diffuse in the plane before entering the flow isolation plane cavity of the lower layer.

7. The air extraction structure according to claim 6, characterized in that: The hole density of the flow guide holes on at least one first flow partition of the flow partitions is positively correlated with the distance of the air extraction channel.

8. The air extraction structure according to claim 7, wherein: The area on the first flow partition covering the air extraction channel is closed.

9. The air extraction structure according to claim 7, wherein: At least one second flow partition of the flow partition is located between the first flow partition and the air extraction plate, and the aperture of the flow guide hole on the second flow partition is positively correlated with the distance of the air extraction channel.

10. A semiconductor device processing equipment, characterized in that: include: A reaction chamber, which holds wafers and is used for thin film deposition processes; An exhaust channel, located at the bottom side of the reaction chamber, for exhausting the gas in the reaction chamber; as well as The exhaust structure according to any one of claims 1 to 9 is located in the reaction chamber and is used to reduce the exhaust flow resistance between the top of the wafer and the exhaust channel in layers during the thin film deposition process.

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