Device for preventing ion implanter suction electrode ignition, ion source cavity structure and ion implantation equipment

Abstract

The utility model relates to a device for preventing an ion implanter electrode from sparking, an ion source cavity structure and ion implantation equipment, the device comprises a storage partition plate, the storage partition plate is installed on a flange outside an ion source, and a body of the storage partition plate is located between a flange cylinder section and an insulation lining on the periphery of the ion source; the position of the storage partition plate corresponds to the position of the through hole formed in the flange cylinder section, and the through hole formed in the flange cylinder section penetrates into the cavity of the ion source and is used for discharging sediments generated in the cavity of the ion source; and the storage partition plate is used for storing sediments falling from the cavity of the ion source. Therefore, deposits generated in the ion source chamber in the technical process can be effectively stored, the deposits are prevented from falling on the insulating bush, the phenomenon of ignition of an absorption electrode is completely eradicated, the stability of a machine table is remarkably improved, and the product quality is ensured.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor ion implantation, and in particular to a device for preventing anode sparks in an ion implanter, an ion source cavity structure, and ion implantation equipment. Background Art

[0002] With the development of semiconductor technology, semiconductor ion implantation has emerged. This process involves directly bombarding a substrate with high-energy ions, thereby depositing chemical substances within it. An ion implanter is a small, high-voltage accelerator that typically consists of a focusing device within the implanter's analytical magnetic field and an ion source connected to the focusing device's input to provide the implanted ions. The accelerated ion beam is used to implant ions into semiconductor materials, large-scale integrated circuits, and other devices.

[0003] At present, in GSD ion implanters, in order to reduce the arcing short circuit of the ion source caused by the deposits generated in the ion source chamber, a square hole is reserved on the upper and lower sides of the flange respectively, so that the generated deposits can fall onto the insulating bushing through the square hole, thereby reducing the probability of short circuit of the ion source filament.

[0004] However, the deposits that accumulate on the insulating bushing over time can degrade insulation and exponentially increase creepage distance. Under high voltage, arcs can propel themselves across the surface through the deposits, causing extraction arcing. Extraction arcing can affect ion beam quality and increase surface damage to the product due to charge bombardment. Utility Model Content

[0005] Based on this, it is necessary to provide a device for preventing the ion implanter from sparking due to the deterioration of insulation caused by the accumulation of deposits on the insulating sleeve of the ion implanter, an ion source cavity structure and an ion implantation equipment.

[0006] In a first aspect, the present application provides a device for preventing anode sparks in an ion implanter, the device comprising: a receiving baffle, the receiving baffle being mounted on a flange outside an ion source, and the body of the receiving baffle being located between a cylindrical section of the flange and an insulating bushing outside the ion source, the position of the receiving baffle corresponding to the position of a through hole provided on the cylindrical section of the flange, wherein:

[0007] The through hole formed on the flange cylindrical section penetrates into the interior of the chamber of the ion source and is used to discharge the sediment generated in the chamber of the ion source;

[0008] The receiving partition is used to receive sediments dropped from the chamber of the ion source.

[0009] In one embodiment, the main body of the storage partition is an arc-shaped structure, and the arc-shaped structure is coaxially arranged with the flange cylindrical section.

[0010] In one embodiment, at least one fixing member is further provided on one end surface of the storage partition, and the fixing member is detachably fastened to the main body of the flange.

[0011] In one embodiment, the device further comprises: screws or bolts, which pass through the circular holes provided on the fixing member to mount the receiving partition on the main body of the flange.

[0012] In one embodiment, when two or more through holes are provided on the flange cylindrical section, the device includes: a plurality of receiving partitions corresponding to the number of the through holes, and each of the receiving partitions corresponds to at least one through hole.

[0013] In one embodiment, a preset spacing distance is maintained between the receiving partition and the flange cylindrical section.

[0014] In one embodiment, the edge of the receiving partition is higher than the bottom surface, forming a groove for receiving sediment.

[0015] In one embodiment, the length of the receiving partition is greater than the length of the through hole opened in the flange cylindrical section, and the width of the receiving partition is greater than the width of the through hole opened in the flange cylindrical section.

[0016] In a second aspect, the present application further provides an ion source cavity structure, comprising: an ion source, a flange, an insulating bushing, and a device for preventing anode sparking in an ion implanter as described in any one of the first aspects;

[0017] The device for preventing the ion implanter from sparking includes a receiving partition, which is mounted on a flange outside the ion source, and the body of the receiving partition is located between the flange cylindrical section and the insulating bushing outside the ion source, and the position of the receiving partition corresponds to the position of the through hole opened on the flange cylindrical section;

[0018] The through hole formed on the flange cylindrical section penetrates into the interior of the chamber of the ion source and is used to discharge the sediment generated in the chamber of the ion source;

[0019] The receiving partition is used to receive sediments dropped from the chamber of the ion source.

[0020] In a third aspect, the present application further provides an ion implantation device, comprising the ion source cavity structure as described in the second aspect.

[0021] The above-mentioned device for preventing anode sparks in an ion implanter, ion source cavity structure, and ion implantation equipment are configured by installing a storage partition on the flange outside the ion source of the ion implanter. The main body of the storage partition is located between the flange cylindrical section and the insulating bushing outside the ion source, and the position of the storage partition corresponds to the position of the through hole opened on the flange cylindrical section. By opening a through hole in the flange cylindrical section that penetrates to the interior of the ion source chamber, sediment generated inside the ion source chamber can be discharged, thereby preventing sediment accumulation inside the ion source. The storage partition can accommodate sediment that falls from the ion source chamber, thereby preventing the sediment from falling on the insulating bushing for a long time and preventing the insulation of the insulating bushing from being deteriorated due to the accumulation of sediment. The present application sets a storage partition between the flange and the insulating bushing to collect deposits, thereby effectively collecting the deposits generated in the ion source chamber during the process, preventing the deposits from falling on the insulating bushing, basically eliminating the phenomenon of anode sparks, significantly improving the stability of the machine, and ensuring the quality of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 This is a schematic diagram of the installation structure of a device for preventing anode sparks in an ion implanter in one embodiment of the present application.

[0023] Figure 2 This is a schematic structural diagram of the flange portion of an ion implanter in one embodiment of the present application.

[0024] Figure 3 This is a schematic diagram of the installation structure of a device for preventing anode sparks in an ion implanter in another embodiment of the present application.

[0025] Figure 4 This is a schematic structural diagram of a storage partition in one embodiment of the present application.

[0026] Figure 5 This is a cross-sectional schematic diagram of an ion source chamber in one embodiment of the present application.

[0027] In the figure: 1-ion source, 2-flange, 3-storage partition, 4, screw / bolt, 5-insulating bushing, 21-flange cylinder, 22-through hole, 31-fixing part, 32-groove. DETAILED DESCRIPTION

[0028] To make the above-mentioned objects, features, and advantages of the present application more clearly understood, the specific embodiments of the present application are described in detail below with reference to the accompanying drawings. The following description sets forth many specific details to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways than those described herein, and those skilled in the art can make similar improvements without violating the scope of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0029] In the description of this application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing this application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0030] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include at least one of such features. In the description of this application, if the term "plurality" appears, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0031] In this application, unless otherwise specified or limited, the terms "mounted," "connected," "connected," "fixed," etc., should be interpreted broadly. For example, these terms may refer to fixed connections, removable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediary; and internal communication between two components or interaction between two components, unless otherwise specified. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0032] In this application, unless otherwise expressly specified or limited, if a first feature is described as being "above" or "below" a second feature, or similar descriptions, this may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Furthermore, when a first feature is described as being "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is described as being "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0033] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only embodiment.

[0034] Figure 1 A schematic diagram of the installation structure of a device for preventing anode sparks in an ion implanter according to the present invention is shown; Figure 5 FIG1 shows a cross-sectional schematic diagram of an ion source chamber in one embodiment of the present application. Figure 1 、 Figure 5 , an apparatus for preventing anode sparks in an ion implanter provided in one embodiment of the present application may include: a receiving partition 3, wherein the receiving partition 3 is mounted on a flange 2 outside the ion source 1, and the body of the receiving partition 3 is located between the flange cylinder 2 section and the insulating bushing 5 outside the ion source, and the position of the receiving partition 3 corresponds to the position of the through hole 22 opened on the flange cylinder 21 section, wherein: the through hole 22 opened on the flange cylinder 21 section passes through the interior of the chamber of the ion source 1, and is used to discharge the sediment generated inside the chamber of the ion source 1; the receiving partition 3 is used to receive the sediment falling from the chamber of the ion source 1.

[0035] In this embodiment, a receiving partition 3 is installed on the flange 2 outside the ion source 1 of the ion implanter. The main body of the receiving partition 3 is located between the flange cylinder 21 section and the insulating bushing outside the ion source 1. The position of the receiving partition 3 corresponds to the position of the through hole 22 opened on the flange cylinder 21 section. By opening the through hole 22 on the flange cylinder 21 section and penetrating to the interior of the chamber of the ion source 1, the sediment generated inside the chamber of the ion source 1 can be discharged, thereby avoiding the accumulation of sediment inside the ion source. The receiving partition 3 can accommodate sediments that fall from the chamber of the ion source 1, thereby avoiding the sediments from falling on the insulating bushing for a long time and avoiding the insulation of the insulating bushing from being deteriorated due to the accumulation of sediments. The embodiment of the present application sets a receiving partition 3 for collecting deposits between the flange 2 and the insulating bushing, thereby effectively receiving the deposits generated in the ion source chamber during the process, preventing the deposits from falling on the insulating bushing, basically eliminating the phenomenon of anode sparks, significantly improving the stability of the machine, and ensuring the quality of the product.

[0036] Combine Figure 2 As shown, Figure 2The figure shows a schematic diagram of the flange structure of an ion implanter according to one embodiment of the present invention. The flange 2 is mounted on the outside of the ion source, and the flange cylinder 21 surrounds the cavity of the ion source 1. At least one through hole 22 is formed in the flange cylinder 21, and the through hole 22 extends into the cavity of the ion source.

[0037] It should be noted that this embodiment does not limit the shape of the through hole 22. For ease of processing, the through hole can be set to be square.

[0038] In an exemplary embodiment, the length of the receiving baffle 3 is greater than the length of the through hole 22 provided in the flange cylinder 21 section, and the width of the receiving baffle 3 is greater than the width of the through hole 22 provided in the flange cylinder 21 section. In other words, in the vertical direction, the projection area of the receiving baffle 3 can completely cover the through hole 22, thereby fully accommodating sediment that falls through the through hole 22.

[0039] Combine Figure 3 As shown, Figure 3 A schematic diagram of the installation structure of a device for preventing sparks in an ion implanter, according to another embodiment of the present application, is shown. At least one fixing member 31 is also provided on one end surface of the storage partition 3. This fixing member 31 is detachably fastened to the main body of the flange 2. This facilitates removal of the storage partition, allowing for repeated use after cleaning.

[0040] In an exemplary embodiment (see Figure 3 ), the above-mentioned device also includes: screws / bolts 4, which are used to install the receiving partition 3 on the main body of the flange 2 through the circular holes opened on the fixing member 31.

[0041] It should be noted that this embodiment does not limit the installation method between the storage partition 3 and the flange 2. In addition to the above-mentioned connection methods, other methods such as snap-fitting, meshing, etc. can also be used. This allows for convenient removal of the storage partition for replacement or cleaning.

[0042] In another exemplary embodiment, when two or more through holes 22 are opened on the flange cylinder 21 section, the above-mentioned device includes: a plurality of receiving partitions 3 corresponding to the number of the through holes 22, and each of the receiving partitions 3 corresponds to at least one through hole 22 (for example, when the distance between two adjacent through holes is short, a receiving partition can be set to collect sediments dropped from the two through holes).

[0043] In this embodiment, the number of through holes 22 provided on the flange cylinder 21 is not limited. When there are two or more through holes, Figure 3 In the embodiment shown, Figure 3A plurality of receiving partitions 3 are provided, and the plurality of receiving partitions 3 surround the flange cylinder 21 section. When the number of the receiving partitions 3 is an even number, the distribution form thereof can be a symmetrical distribution.

[0044] Combine Figure 4 As shown, Figure 4 The schematic diagram of the structure of the receiving partition in one embodiment of the present application is shown. The body of the receiving partition 3 is an arc-shaped structure, and the arc-shaped structure is coaxially arranged with the flange cylindrical section (see Figure 3 embodiment shown).

[0045] In this embodiment, the curved storage partition is designed to better fit the existing flange structure, thereby fully utilizing the space around the flange. Furthermore, compared to a flat plate structure, the curved structure can increase the amount of sediment the storage partition can accommodate, reducing the number of subsequent removals (i.e., avoiding frequent replacements).

[0046] In an exemplary embodiment, the edge of the receiving partition 3 is higher than the bottom surface to form a sediment receiving groove 32. This groove structure can well receive the fallen sediment and prevent the sediment from piling up too high and falling onto the insulating bushing of the ion source.

[0047] For example, the thickness of the storage partition can be set to 3 mm, the groove depth can be 1.5 mm, the height can be 40 mm (or the width can be set), and the arc length can be 92 mm. In this embodiment, the dimensional parameters of the storage partition are provided for example only. However, in actual application, these parameters can be flexibly adjusted according to the size of the ion source chamber or the size of the peripheral space available for placement.

[0048] It should be noted that this embodiment does not limit the material of the storage partition. For example, a hard insulating material (such as plastic) or an elastic insulating material (such as rubber) can be used.

[0049] Combine Figure 5 As shown, a preset spacing distance can also be set between the receiving partition 3 and the flange cylinder 21. For example, the distance between the partition and the flange cylinder can be set to 15 mm according to the spatial distance.

[0050] It should be noted that this embodiment does not limit the specific distance between the storage partition and the flange cylinder. The value of the distance can be obtained based on experience or repeated tests during actual use.

[0051] Exemplarily, the present application also provides an ion source cavity structure, the ion source cavity structure comprising: an ion source, a flange, an insulating bushing, and Figures 1 to 5The device for preventing the ion implanter from sparking at the anode in the illustrated embodiment; the device for preventing the ion implanter from sparking at the anode includes a receiving partition, which is mounted on a flange outside the ion source, and the body of the receiving partition is located between the flange cylindrical section and the insulating bushing outside the ion source, and the position of the receiving partition corresponds to the position of the through hole opened on the flange cylindrical section; the through hole opened on the flange cylindrical section penetrates into the interior of the chamber of the ion source and is used to discharge the sediment generated inside the chamber of the ion source; the receiving partition is used to receive the sediment falling from the chamber of the ion source.

[0052] For example, taking the GSD model ion implanter as an example, in the GSD ion implanter, in order to reduce the deposits generated in the ion source chamber that cause the ion source arc short circuit, a square hole is reserved on the upper and lower flanges. The deposits (coating) generated will fall onto the insulating bushing through the square holes. This design will greatly reduce the probability of the ion source filament short circuit. On this basis, further settings such as Figures 1 to 5 The device for preventing sparks from the ion implanter in the illustrated embodiment includes a containment plate positioned between the flange and the insulating bushing. This device effectively contains deposits generated in the ion source chamber during the process, preventing them from falling onto the insulating bushing. This prevents sparks from occurring and ensures ion beam quality, significantly improving the stability of the implanter and guaranteeing product quality.

[0053] Illustratively, the present application also provides an ion implantation device, including the above-mentioned ion source cavity structure, beam line part, target chamber, and terminal station.

[0054] The ion implantation equipment in this embodiment can effectively prevent deposits from falling into the insulating bushing, thereby ensuring the insulation performance of the insulating bushing, avoiding the exponential increase in the creepage distance, and avoiding the problem of anode sparking caused by high-voltage arcs crawling over the surface of the insulating bushing, thereby ensuring the stability of the machine temperature and significantly improving product quality.

[0055] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0056] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A device for preventing sparks from the anode of an ion implanter, characterized in that: The device comprises: a receiving partition, the receiving partition being mounted on a flange outside the ion source, and the body of the receiving partition being located between a flange cylindrical section and an insulating bushing outside the ion source, the position of the receiving partition corresponding to the position of a through hole provided on the flange cylindrical section, wherein: The through hole formed on the flange cylindrical section penetrates into the interior of the chamber of the ion source and is used to discharge the sediment generated in the chamber of the ion source; The receiving partition is used to receive sediments dropped from the chamber of the ion source.

2. The device according to claim 1, characterized in that The main body of the storage partition is an arc-shaped structure, and the arc-shaped structure is coaxially arranged with the flange cylindrical section.

3. The device according to claim 1, characterized in that At least one fixing member is further provided on one end surface of the receiving partition, and the fixing member is fastened to the main body of the flange in a detachable manner.

4. The device according to claim 3, characterized in that The device further comprises screws or bolts, which pass through the circular holes provided on the fixing member to mount the receiving partition on the main body of the flange.

5. The device according to claim 1, characterized in that When two or more through holes are provided on the flange cylindrical section, the device comprises: a plurality of receiving partitions corresponding to the number of the through holes, and each of the receiving partitions corresponds to at least one through hole.

6. The device according to any one of claims 1 to 5, characterized in that A preset spacing distance is maintained between the receiving partition and the flange cylinder section.

7. The device according to any one of claims 1 to 5, characterized in that The edge of the receiving partition is higher than the bottom surface, forming a groove for receiving sediment.

8. The device according to any one of claims 1 to 5, characterized in that The length of the receiving partition is greater than the length of the through hole opened on the flange cylindrical section, and the width of the receiving partition is greater than the width of the through hole opened on the flange cylindrical section.

9. An ion source cavity structure, characterized in that: The ion source cavity structure comprises: an ion source, a flange, an insulating bushing, and the device for preventing anode sparking in an ion implanter according to any one of claims 1 to 8; The device for preventing the ion implanter from sparking includes a receiving partition, which is mounted on a flange outside the ion source, and the body of the receiving partition is located between the flange cylindrical section and the insulating bushing outside the ion source, and the position of the receiving partition corresponds to the position of the through hole opened on the flange cylindrical section; The through hole formed on the flange cylindrical section penetrates into the interior of the chamber of the ion source and is used to discharge the sediment generated in the chamber of the ion source; The receiving partition is used to receive sediments dropped from the chamber of the ion source.

10. An ion implantation device, characterized in that: Including the ion source chamber structure as described in claim 9.

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