Semiconductor reaction chamber and retainer thereof

Abstract

The utility model provides a semiconductor reaction chamber and a retainer thereof, the bottom wall of the lower chamber of the semiconductor reaction chamber is a flat wall, the retainer comprises a mounting part and a supporting part, the supporting part is located above the mounting part, and the lower surface of at least part of the mounting part or the lower surface of at least part of the supporting part abuts against the bottom wall of the lower chamber. The supporting parts of the retainers are used for supporting the ejector pins, and each retainer is located below the corresponding ejector pin; or the retainer comprises a finish machining flat part, the finish machining flat part comprises a finish machining flat surface, the finish machining flat part is located on the bottom wall of the lower cavity, the retainer is used for supporting the ejector pins, and each retainer is located below the corresponding ejector pin. According to the retainer provided by the utility model, the substrate cannot incline when being supported by the ejector pin, and the condition that the substrate is overturned or broken is avoided.

Description

Technical Field

[0001] The utility model mainly relates to the technical field of semiconductor preparation devices, in particular to a semiconductor reaction chamber and a stopper thereof. Background Art

[0002] With the continuous development of semiconductor technology and the expansion of its application areas, semiconductor manufacturing equipment is also constantly being upgraded to meet the manufacturing needs of higher precision, higher efficiency, and lower costs. Semiconductor reaction chambers are one of the indispensable equipment in the semiconductor manufacturing process. They are mainly used for reactions such as material deposition and etching. They are one of the most important components in the semiconductor industry and play a vital role in the manufacture of semiconductor devices.

[0003] The patentee of this application has discovered that the degree to which the upper surfaces of multiple ejector pins are located on the same horizontal plane (referred to as coplanarity) has a significant impact on the implementation of the process. For example, when the coplanarity of the upper surfaces of multiple ejector pins is low (or the heights of the upper surfaces of multiple ejector pins are inconsistent), the substrate is prone to tilt when supported by the ejector pins, which may cause the substrate to overturn or break. Utility Model Content

[0004] The technical problem to be solved by the present invention is to provide a semiconductor reaction chamber and a stopper thereof, so that the ejector pins can be supported to a more precise position, and the substrate will not tilt when supported by the ejector pins, thereby avoiding the substrate from tipping over or breaking.

[0005] In order to solve the above technical problems, in the first aspect, the utility model provides a stopper for a semiconductor reaction chamber, wherein the bottom wall of the lower chamber of the semiconductor reaction chamber is a flat wall, and the stopper includes a mounting portion and a supporting portion, wherein the supporting portion is located above the mounting portion, and at least part of the lower surface of the mounting portion or at least part of the lower surface of the supporting portion abuts against the bottom wall of the lower chamber, and the supporting portion of the stopper is used to support a ejector pin; each of the stoppers is located below the corresponding ejector pin.

[0006] Optionally, the bottom wall of the lower cavity has a positioning groove, which is recessed downward from the upper surface of the bottom wall of the lower cavity, and at least part of the lower surface of the mounting portion abuts against the bottom of the positioning groove, or at least part of the mounting portion is located in the positioning groove.

[0007] Optionally, when at least a portion of the lower surface of the mounting portion abuts against the bottom of the positioning groove, a gap is provided between the lower surface of the supporting portion and the upper surface of the bottom wall of the lower cavity.

[0008] Optionally, a side surface of the support portion has a groove, and the groove is configured so that a clamping tool clamps the stopper through the groove.

[0009] Optionally, the groove is an annular groove provided along the side surface of the support portion.

[0010] Optionally, the stoppers are provided in multiple groups with different heights, and each group includes multiple stoppers with consistent heights.

[0011] In the second aspect, the utility model provides a stopper for a semiconductor reaction chamber, wherein the semiconductor reaction chamber includes a chamber body and chamber flanges fixed on both sides of the chamber body, the chamber flanges are a first chamber flange on the left and a second chamber flange on the right, the bottom wall of the chamber body is a flat wall, the stopper includes a finely machined flat portion, the finely machined flat portion includes a finely machined flat surface, and the finely machined flat portion is located on the bottom wall of the lower chamber; the stopper is used to support the ejector pin, and each of the stoppers is located below the corresponding ejector pin.

[0012] Optionally, the finely finished flat surface is lower than the plane where the upper surface of the bottom wall of the lower cavity is located.

[0013] Optionally, the upper surface of the bottom wall of the lower cavity has a boss, and the upper surface of the boss is the finely machined flat surface.

[0014] In the third aspect, the present invention also provides a semiconductor reaction chamber, which includes a chamber body and chamber flanges fixed on both sides of the chamber body, the chamber flanges are respectively a first chamber flange on the left and a second chamber flange on the right, and an air inlet flange is also connected to one side of the first chamber flange, and the air inlet flange has a transmission port. The bottom wall of the lower cavity of the chamber body is a flat wall, and the bottom wall includes a placement portion; the semiconductor reaction chamber also includes a stopper, which is the stopper disclosed in the first and second aspects of the present invention, and at least a portion of the stopper is located in the placement portion.

[0015] Compared with the prior art, the present invention has the following advantages: the stopper includes a mounting portion and a supporting portion, the supporting portion being located above the mounting portion, with at least a portion of the lower surface of the mounting portion or at least a portion of the lower surface of the supporting portion abutting the bottom wall of the lower chamber. The supporting portion of the stopper is used to support the ejector pins, and each stopper is located below its corresponding ejector pin. These stoppers ensure that the height of the substrate remains consistent when the ejector pins receive or support it, thus preventing the substrate from tilting. Alternatively, a stopper with a finely machined flat portion can also ensure that the height of the substrate remains consistent when the ejector pins receive or support it, thereby ensuring that the substrate does not tilt and preventing the substrate from tipping over or breaking. The semiconductor reaction chamber disclosed in the present invention can support its ejector pins to a relatively precise position. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The accompanying drawings are included to provide a further understanding of the present application. They are incorporated into and constitute a part of this application. The accompanying drawings illustrate embodiments of the present application and, together with this specification, serve to explain the principles of the present application. In the accompanying drawings:

[0017] Figure 1 is a schematic diagram of a semiconductor reaction chamber without a stopper;

[0018] Figure 2 This is a schematic diagram of a semiconductor reaction chamber provided with a stopper in the present invention;

[0019] Figure 3 yes Figure 2 A magnified schematic diagram of point A in the middle;

[0020] Figure 4 It is a schematic diagram of a semiconductor reaction chamber provided with another type of stopper in the present invention;

[0021] Figure 5 yes Figure 4 A magnified schematic diagram of point B in the middle;

[0022] Figure 6 It is another structural schematic diagram of the finely processed flat surface in the utility model.

[0023] In the picture:

[0024] 100-chamber body, 101-lower chamber bottom wall, 102-positioning groove;

[0025] 201-first chamber flange, 202-second chamber flange;

[0026] 300-inlet flange, 301-transmission port;

[0027] 400-deflector;

[0028] 500-heating ring;

[0029] 600-support, 601-tray bracket, 602-substrate tray, 603-thimble;

[0030] 700-stopper, 701-support part, 702-mounting part, 703-groove, 704-finished flat surface, 705-boss;

[0031] 800-substrate. DETAILED DESCRIPTION

[0032] To more clearly illustrate the technical solutions of the embodiments of this application, the following is a brief introduction to the drawings required for describing the embodiments. Obviously, the drawings described below are merely examples or embodiments of this application. Those skilled in the art can apply this application to other similar scenarios based on these drawings without inventive effort. Unless otherwise apparent from the context or otherwise noted, the same reference numerals in the figures represent the same structure or operation.

[0033] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the spatial positional relationship of a device or feature to other devices or features as shown in the figures. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figures. For example, if the device in the drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0034] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is solely for the purpose of distinguishing the corresponding components. Unless otherwise stated, these terms have no special meaning and therefore should not be construed as limiting the scope of protection of this application. Furthermore, while the terms used in this application are selected from commonly known and commonly used terms, some terms mentioned in this specification may have been selected by the applicant at his or her discretion, and their detailed meanings are explained in the relevant sections of this description. Furthermore, this application should be understood not only by the actual terms used, but also by the meaning implied by each term.

[0035] Figure 1 This is a schematic diagram of a semiconductor reaction chamber without a stopper. Figure 1As shown, the semiconductor reaction chamber includes a chamber body 100 and chamber flanges fixed to the chamber body 100 on either side, namely a first chamber flange 201 on the left and a second chamber flange 202 on the right. An inlet flange 300 is also connected to one side of the first chamber flange 201. The inlet flange 300 has a transfer port 301 (or film transfer port) configured to allow a substrate 800 to pass therethrough, thereby transferring the substrate 800 into the chamber body 100. Other structures of the inlet flange 300, such as the inlet channel, will not be described in detail here, as they do not affect the understanding of the essential content of this embodiment.

[0036] The chamber body 100 is generally provided with a guide plate 400 and a heating ring 500 adjacent to the guide plate 400. The area above the guide plate 400 and the heating ring 500 is the upper chamber, and the area below the guide plate 400 and the heating ring 500 is the lower chamber. The guide plate 400 and the heating ring 500 are basically at the same horizontal position, and the guide plate 400 and the heating ring 500 separate the chamber body 100 into an upper chamber and a lower chamber. When the semiconductor reaction chamber is working, the substrate 800 (such as a wafer) is stabilized in the area surrounded by the heating ring 500 by the relevant support structure. The substrate 800 is also basically at the same horizontal position as the heating ring 500. The thin film deposition process is carried out at this position, which is the process position of thin film deposition. Therefore, it can also be said that the area above the process position is the upper chamber, and the area below the process position is the lower chamber.

[0037] In addition, a support member 600 is provided within the chamber body 100. The support member 600 primarily includes a tray support 601, a substrate tray 602, and an ejector pin 603. The substrate tray 602 is mounted on the tray support 601. For example, a groove is provided on the bottom surface of the substrate tray 602, and a positioning pin is provided on the tray support 601. When the positioning pin extends into the groove, the tray support 601 can drive the substrate tray 602 to rotate. An ejector pin 603 is movably provided on the substrate tray 602. When the ejector pin 603 is supported by the substrate tray 602, the upper surface of the ejector pin 603 is flush with or below the upper surface of the substrate tray 602. The support member 600 is crucial for ensuring the smooth progress of the thin film deposition process, ensuring that the substrate 800 remains stable during the reaction and preventing deformation or movement of the substrate 800.

[0038] As the tray support 601 moves downward, when the ejector pins 603 land on and are supported by the lower chamber bottom wall 101 of the semiconductor reaction chamber, the upper surfaces of the ejector pins 603 are higher than the upper surface of the substrate tray 602. At this point, the substrate 800 is supported by the ejector pins 603, whose upper surfaces are higher than the substrate tray 602. Although the upper surface of the lower chamber bottom wall 101 is planar, its flatness does not meet the precision required for positioning the ejector pins 603. In this case, the upper surfaces of the ejector pins 603 are located at different heights after contact with the lower chamber bottom wall 101. This means that the coplanarity of the upper surfaces of the multiple ejector pins 603 is low, causing the substrate 800 to tilt when supported by the ejector pins 603, potentially causing the substrate 800 to tip over or break. It should be noted that low coplanarity indicates that the upper surfaces of the multiple ejector pins 603 deviate significantly from the horizontal plane, while high coplanarity indicates that the upper surfaces of the multiple ejector pins 603 are closer to the same horizontal plane.

[0039] refer to Figure 2 and Figure 3 As shown, this embodiment addresses the aforementioned issues by providing a stopper 700. The stopper 700 is disposed on the lower chamber bottom wall 101 of the semiconductor reaction chamber. Each stopper 700 is located below its corresponding ejector pin 603. The stopper 700 is configured to adjust the height of the upper surface of the ejector pin 603. The stopper 700 includes a mounting portion 702 and a support portion 701. The support portion 701 is located above the mounting portion 702. At least a portion of the lower surface of the mounting portion 702 or at least a portion of the lower surface of the support portion 701 abuts the lower chamber bottom wall 101 for positioning. The support portion 701 of the stopper 700 is used to support the ejector pin 603. In this embodiment, a stop member 700 is added, and the abutting surface of the stop member 700 (the "abutting surface" here refers to the surface of the stop member 700 that abuts against the bottom wall 101 of the lower cavity to position the stop member 700) and the portion of the bottom wall 101 of the lower cavity that abuts against the abutting surface of the stop member 700 are fine-processed, so that the coplanarity of the upper surfaces of the multiple ejector pins 603 is higher.

[0040] It should be understood that in order to control the upper surface of the ejector pin to a more precise position, the upper surface of the support portion 701 of the stopper also needs to be finely processed.

[0041] Under the aforementioned configuration, the semiconductor reaction chamber can be processed only by cold working, without the need for heating and melting, thus avoiding the uncontrollable precision caused by temperature drop and chamber deformation after thermal processing. For the embodiments described below that include a "finely processed flat portion", it can also be processed only by cold working (cold working in this application is mainly compared to the method that requires melting and heating a portion of the semiconductor reaction chamber for processing), thus avoiding the uncontrollable precision that is easily introduced by heating and melting.

[0042] In one example, the stoppers 700 are provided in multiple groups of different heights (or thicknesses), each group including a plurality of stoppers 700 of uniform height. For example, each group includes three stoppers 700 of uniform height. It should be understood that the number of stoppers 700 in each group can be consistent with the number of ejector pins 603 included in the target semiconductor reaction chamber. The heights of the stoppers 700 vary slightly between the multiple groups. It should be understood that the number of stoppers 700 of the same height can also be other. In actual use, stoppers 700 of different heights can be used as needed to ensure that the height of the upper surface of each ejector pin 603 is consistent (i.e., the stoppers adjust the unevenness caused by cavity welding). This can ensure that the upper surface of each ejector pin 603 maintains as high a coplanarity as possible, thereby preventing the substrate 800 from tilting when supported by the ejector pins 603.

[0043] In this embodiment, as the tray support 601 descends, the lowest ends of the ejector pins 603 contact the stopper 700. Subsequently, the tray support 601 moves to its lowest position, and the robot then transfers the substrate 800 to the top surface of the ejector pins 603, where the ejector pins 603 provide support for the substrate 800. For example, taking three ejector pins 603 supporting the substrate 800 as an example, the upper surfaces of the three ejector pins 603 form a contact surface. If the upper surfaces of the three ejector pins 603 are at different heights, the substrate 800 will tilt. If the tilt is too large, the substrate 800 may overturn under the influence of gravity and friction, resulting in the substrate 800 being trapped in the semiconductor reaction chamber and unable to be removed, or even breaking. If the tilt angle is too small, when the substrate 800 approaches the upper surface of the substrate tray 602, the residual gas in the lower portion of the substrate 800 is unevenly discharged along the periphery, which can easily cause the substrate 800 to slide off the center position. To keep substrate 800 as horizontal as possible when held by ejector pins 603, this embodiment uses stoppers 700 to maintain a consistent height on the top surface of ejector pins 603, thereby maintaining the horizontality of substrate 800. During use, different stoppers 700 can be selected and placed under ejector pins 603 as needed to achieve the required height for ejector pins 603 and prevent substrate 800 from tilting.

[0044] In one example, the lower chamber bottom wall 101 has a positioning groove 102 that is recessed downward from the upper surface of the lower chamber bottom wall 101. At least a portion of the lower surface of the mounting portion 702 abuts the bottom of the positioning groove 102 for positioning. Because the bottom of the positioning groove 102 and the lower surface of the mounting portion 702 are both finely machined, the upper surface position of the ejector pin 603 can be controlled within a more precise range.

[0045] In this embodiment, a positioning groove 102 is provided on the inner surface of the bottom wall of the chamber body 100 (i.e., the lower chamber bottom wall 101). A stopper 700 is disposed within the positioning groove 102. The stopper 700 vertically cooperates with the ejector pin 603. Stoppers 700 of different specifications (i.e., different heights) can be used to level the ejector pin 603. A mounting portion 702 extends into the positioning groove 102 to support the stopper 700 within the chamber body 100. The mounting portion 702 of the stopper 700 can be slightly longer than the depth of the positioning groove 102, so that after the stopper 700 is installed, the finely machined lower surface of the mounting portion 702 contacts the finely machined bottom of the positioning groove 102.

[0046] In another embodiment of the present invention, at least a portion of the lower surface of the support portion 701 abuts the upper surface of the lower chamber bottom wall 101 to achieve positioning of the stopper 700. In this case, the mounting portion 702 is located within the positioning groove. Similarly, because the lower surface of the support portion 701 and the corresponding portions of the upper surface of the lower chamber bottom wall 101 have been finely machined, the position of the upper surface of the ejector pin 603 can be controlled within a more precise range. In this embodiment, the installation length of the mounting portion 702 of the stopper 700 is less than the depth of the positioning groove 102. In this embodiment, at least a portion of the lower surface of the support portion 701 and the upper surface of the semiconductor reaction chamber bottom wall abutting the lower surface of the at least portion of the support portion 701 have been finely machined, thereby enabling the position of the upper surface of the ejector pin 603 to be controlled within a more precise range.

[0047] In one example, when at least a portion of the lower surface of the mounting portion 702 is in contact with the bottom of the groove, a gap exists between the lower surface of the supporting portion 701 and the bottom wall 101 of the lower cavity.

[0048] In this embodiment, if a tool is required to operate the stopper 700, a gap is provided between the lower surface of the support portion 701 of the stopper 700 and the bottom wall 101 of the lower chamber. This gap provides sufficient operating space for the tool during installation and removal of the stopper 700, facilitating smooth installation and removal of the stopper 700. For example, the height of the gap is 2 mm to 5 mm.

[0049] In one example, the side surface of the support portion 701 has a groove 703 , and the groove 703 is configured so that a clamping tool can clamp the stopper 700 through the groove 703 . Further, the groove 703 is an annular groove provided along the side surface of the support portion 701 .

[0050] In this embodiment, the groove 703 on the support portion 701 cooperates with an installation and removal tool, utilizing shape matching and / or friction to achieve gripping, ensuring stability and precision during assembly of the stopper 700. When installing or removing the stopper 700, the installation and removal tool can be directly clamped onto the groove 703 on the support portion 701, allowing for smooth installation and removal. Furthermore, if the groove 703 is an annular groove, the installation and removal tool can grip the stopper 700 in either direction, providing greater operational flexibility.

[0051] This embodiment uses stoppers 700, each of which is located below its corresponding ejector pin 603. These stoppers 700 ensure that the height of the substrate 800 remains consistent when the ejector pin 603 receives or supports the substrate 800, thereby preventing the substrate 800 from tilting and preventing the substrate 800 from tipping over or breaking.

[0052] Another embodiment of the present invention provides a stopper for a semiconductor reaction chamber, referring to Figure 4 As shown, the semiconductor reaction chamber includes a chamber body 100 and chamber flanges fixed on both sides of the chamber body 100. The chamber flanges are a first chamber flange 201 on the left and a second chamber flange 202 on the right. The bottom wall of the chamber body 100 is a flat wall. The stopper 700 includes a finely machined flat portion, which includes a finely machined flat surface 704. The finely machined flat portion is located on the lower chamber bottom wall 101. The stopper 700 is used to support the ejector pins 603. Each stopper 700 is located below its corresponding ejector pin 603. The stopper 700 with the finely machined flat surface 704 ensures that the height of the substrate 800 remains consistent when the ejector pins 603 receive or support the substrate 800.

[0053] Although the upper surface of the lower chamber bottom wall 101 is flat, its flatness cannot meet the precision requirements for positioning the ejector pins 603 (for example, the chamber body is typically welded during the manufacturing process, and during the welding process, the chamber body heats up and cools down, which can easily lead to unevenness in the chamber surface). In this embodiment, a portion or section of the lower chamber bottom wall 101 can be fine-machined to form a finely machined flat surface 704 on the upper surface of the lower chamber bottom wall 101 at that location. In this way, using finely machined flat surfaces 704 of the same or different heights can ensure that the height of the substrate 800 remains consistent when the ejector pins 603 receive or support the substrate 800, thereby ensuring that the substrate 800 does not tilt.

[0054] For example, consider three ejector pins 603 supporting substrate 800. The top surfaces of the three ejector pins 603 form a contact surface. If the top surfaces of the three ejector pins 603 are at different heights, substrate 800 will tilt. If the tilt is too large, substrate 800 may overturn under the force of gravity, becoming trapped within the semiconductor reaction chamber and unable to be removed, or even breaking. If the tilt is too small, when substrate 800 lands on the top surface of substrate tray 602 after transfer, residual gas in the lower portion of substrate 800 is unevenly discharged around the periphery, causing substrate 800 to slide off center. In order to keep the substrate 800 as horizontal as possible when it is received by the ejector pins 603, this embodiment performs fine processing on the lower chamber bottom wall 101 corresponding to the three ejector pins 603 to make the surface of the lower chamber bottom wall 101 smooth at these three locations. By also making the finely processed flat surfaces 704 at the same or different heights, the height of the substrate 800 is kept consistent when the ejector pins 603 receive or support the substrate 800, thereby ensuring that the substrate 800 does not tilt.

[0055] In one example, the finely machined flat surface 704 is lower than the plane where the upper surface of the lower cavity bottom wall 101 is located.

[0056] refer to Figure 5 As shown, in this embodiment, the finely machined flat surface 704 is lower than the plane of the upper surface of the bottom wall 101 of the lower cavity. The advantage is that there is a groove here, so the ejector pin 603 can fall directly into the groove, which makes positioning easier, and the ejector pin 603 is more stable after falling on the finely machined flat surface 704.

[0057] refer to Figure 6 As shown, in one example, the upper surface of the lower cavity bottom wall 101 has a boss 705, and the upper surface of the boss 705 is a finely machined flat surface 704. In this embodiment, the structural form of the finely machined flat surface 704 can be comprehensively considered based on factors such as the difficulty of machining the finely machined flat surface 704 and the required high consistency of the ejector pins 603.

[0058] This embodiment uses the above-mentioned stopper 700, that is, uses finely processed flat surfaces 704 of different heights, which can also ensure that the height of the substrate 800 remains consistent when the ejector pins 603 receive or support the substrate 800, thereby ensuring that the substrate 800 does not tilt and avoiding the substrate 800 from overturning or breaking.

[0059] Another embodiment of the present invention provides a semiconductor reaction chamber, comprising a chamber body 100 and chamber flanges fixed to the chamber body 100 on either side. The chamber flanges are a first chamber flange 201 on the left side and a second chamber flange 202 on the right side. An air inlet flange 300 is further connected to one side of the first chamber flange 201. The air inlet flange 300 has a transfer port 301. The lower chamber bottom wall 101 of the chamber body 100 is a flat wall and includes a mounting portion. The semiconductor reaction chamber also includes a stopper 700, such as the stopper 700 disclosed in the aforementioned embodiments. At least a portion of the stopper 700 is located in the mounting portion. Depending on the different structural arrangements of the stopper 700 in the aforementioned embodiments, the mounting portion can be a positioning groove 102 or a finely machined flat surface 704.

[0060] For other details of each component or part in this embodiment, reference can be made to the aforementioned embodiments and will not be elaborated here.

[0061] The semiconductor reaction chamber of this embodiment uses a stopper 700 to support the ejector pins 603 to a more precise position. The substrate 800 will not tilt when supported by the ejector pins 603, thus preventing the substrate 800 from tipping over or breaking.

[0062] The basic concepts have been described above. It will be apparent to those skilled in the art that the above utility model disclosure is merely illustrative and does not constitute a limitation of this application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and amendments to this application. Such modifications, improvements, and amendments are suggested in this application and therefore remain within the spirit and scope of the exemplary embodiments of this application.

[0063] Similarly, it should be noted that, in order to simplify the description of the present disclosure and thus facilitate understanding of one or more utility model embodiments, the foregoing description of the present embodiment sometimes combines multiple features into a single embodiment, figure, or description thereof. However, this disclosure method does not mean that the subject matter of the present application requires more features than those recited in the claims. In fact, the features of an embodiment may be fewer than the total features of a single embodiment disclosed above.

[0064] Although the present application has been described with reference to the current specific embodiments, ordinary technicians in this technical field should recognize that the above embodiments are only used to illustrate the present application, and various equivalent changes or substitutions can be made without departing from the spirit of the present application. Therefore, as long as the changes and modifications to the above embodiments are within the scope of the essential spirit of the present application, they will fall within the scope of the claims of the present application.

Claims

1. A stopper for a semiconductor reaction chamber, wherein the bottom wall of the lower chamber of the semiconductor reaction chamber is a flat wall, characterized in that: The stop member includes a mounting portion and a supporting portion, the supporting portion is located above the mounting portion, at least part of the lower surface of the mounting portion or at least part of the lower surface of the supporting portion abuts against the bottom wall of the lower cavity, and the supporting portion of the stop member is used to support the ejector pin; each of the stop members is located below its corresponding ejector pin.

2. The stopper for a semiconductor reaction chamber according to claim 1, wherein: The bottom wall of the lower cavity has a positioning groove, which is recessed downward from the upper surface of the bottom wall of the lower cavity. At least part of the lower surface of the mounting portion abuts against the bottom of the positioning groove, or at least part of the mounting portion is located in the positioning groove.

3. The stopper for a semiconductor reaction chamber according to claim 2, wherein: When at least a portion of the lower surface of the mounting portion abuts against the bottom of the positioning groove, a gap is formed between the lower surface of the supporting portion and the upper surface of the bottom wall of the lower cavity.

4. The stopper for a semiconductor reaction chamber according to claim 2, wherein: A side surface of the support portion has a groove configured so that a clamping tool clamps the stopper through the groove.

5. The stopper for a semiconductor reaction chamber according to claim 4, wherein: The groove is an annular groove provided along the side surface of the support portion.

6. The stopper for a semiconductor reaction chamber according to any one of claims 1 to 5, wherein: The stoppers are provided in a plurality of groups with different heights, and each group includes a plurality of stoppers with the same height.

7. A stopper for a semiconductor reaction chamber, characterized in that: The semiconductor reaction chamber includes a chamber body and chamber flanges fixed on both sides of the chamber body, wherein the chamber flanges are a first chamber flange on the left and a second chamber flange on the right, and the bottom wall of the lower chamber of the chamber body is a flat wall; The stopper includes a finely machined flat portion, the finely machined flat portion includes a finely machined flat surface, and the finely machined flat portion is located on the bottom wall of the lower cavity; the stopper is used to support the ejector pin, and each of the stoppers is located below the corresponding ejector pin.

8. The stopper for a semiconductor reaction chamber according to claim 7, wherein: The finely machined flat surface is lower than the plane where the upper surface of the bottom wall of the lower cavity is located.

9. The stopper for a semiconductor reaction chamber according to claim 7, wherein: The upper surface of the bottom wall of the lower cavity is provided with a boss, and the upper surface of the boss is the finely machined flat surface.

10. A semiconductor reaction chamber, characterized in that: The semiconductor reaction chamber includes a chamber body and chamber flanges fixed on both sides of the chamber body, wherein the chamber flanges are a first chamber flange on the left and a second chamber flange on the right. An air inlet flange is further connected to one side of the first chamber flange, and the air inlet flange has a transmission port. The bottom wall of the chamber body is a flat wall, and the bottom wall includes a mounting portion. The semiconductor reaction chamber further includes a stopper, which is the stopper according to any one of claims 1 to 9, and at least a portion of the stopper is located in the placement portion.

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