Heterojunction solar cell, assembly and system

Abstract

The utility model relates to a heterojunction solar cell, a solar module and a solar system, the heterojunction solar cell comprises a silicon substrate, one side of the silicon substrate is provided with a first intrinsic layer, a first doping layer, a first conducting layer and a first electrode, a second intrinsic layer, a second doping layer, a second conducting layer and a second electrode are arranged on the other surface of the silicon substrate outwards, and the first intrinsic layer and the second intrinsic layer are of at least three-layer laminated structures; the at least six layers of laminated structures of the first intrinsic layer and the second intrinsic layer comprise an intrinsic amorphous silicon layer, an intrinsic amorphous silicon oxide layer and an intrinsic amorphous silicon carbide layer, and at least one layer of the at least six layers of laminated structures is an intrinsic polycrystalline silicon layer, an intrinsic microcrystalline silicon layer or an intrinsic nanocrystalline silicon layer; and the doping types of the first doping layer and the second doping layer are opposite. According to the utility model, the overall resistance value of the heterojunction solar cell can be reduced, the passivation effect of the field effect is enhanced, and the conversion efficiency of the heterojunction solar cell is optimized.

Description

Technical Field

[0001] The utility model relates to the technical field of heterojunction solar cells, in particular to a heterojunction solar cell, a component and a system. Background Art

[0002] At present, the heterojunction solar cell in the prior art is to deposit intrinsic amorphous silicon, doped amorphous silicon, conductive film and metal electrode in sequence on the light-receiving side and backlight side of the silicon substrate, and only one intrinsic amorphous silicon layer is deposited on the light-receiving side and backlight side of the substrate respectively.

[0003] However, the heterojunction structure composed of intrinsic amorphous silicon, doped amorphous silicon and single crystal silicon has too large a contact resistance, and the single intrinsic layer contributes little to the overall electron transmission performance of the heterojunction battery, which will affect the photoelectric conversion efficiency of the battery. Utility Model Content

[0004] The primary purpose of the utility model is to provide a heterojunction solar cell to reduce the contact resistance and improve the cell conversion efficiency.

[0005] Another object of the present invention is to provide a solar module using the above-mentioned heterojunction solar cell.

[0006] Another object of the present invention is to provide a solar energy system using the above solar energy components.

[0007] In order to solve the above technical problems, the present invention provides the following technical solutions:

[0008] A heterojunction solar cell comprises a silicon substrate, wherein one side of the silicon substrate is provided with a first intrinsic layer, a first doped layer, a first conductive layer and a first electrode facing outward, and the other side of the silicon substrate is provided with a second intrinsic layer, a second doped layer, a second conductive layer and a second electrode facing outward, wherein the first intrinsic layer and the second intrinsic layer are both at least three-layer stacked structures, and the at least six-layer stacked structures of the first intrinsic layer and the second intrinsic layer include an intrinsic amorphous silicon layer, an intrinsic amorphous silicon oxide layer and an intrinsic amorphous silicon carbide layer, and at least one layer of the at least six-layer stacked structures is an intrinsic polycrystalline silicon layer, an intrinsic microcrystalline silicon layer or an intrinsic nanocrystalline silicon layer, and the doping types of the first doped layer and the second doped layer are opposite.

[0009] Preferably, the first conductive layer is a first transparent conductive film.

[0010] Preferably, the second conductive layer is a second transparent conductive film.

[0011] Preferably, the first conductive layer and the second conductive layer are both made of a transparent conductive metal compound.

[0012] Preferably, the first conductive layer and the second conductive layer are made of indium tin oxide, tungsten-doped indium oxide, indium cerium oxide, aluminum-doped zinc oxide or zinc oxide.

[0013] Preferably, the first conductive layer and the second conductive layer are deposited on a side of the first intrinsic layer away from the silicon substrate and a side of the second intrinsic layer away from the silicon substrate respectively by physical vapor deposition or reactive plasma deposition.

[0014] Preferably, the first electrode and the second electrode are both made of one or more of nickel, silver and copper.

[0015] Preferably, the first doped layer is an N-type amorphous silicon layer, and the second doped layer is a P-type amorphous silicon layer.

[0016] The utility model also relates to a solar energy component, comprising the heterojunction solar cell.

[0017] The utility model also relates to a solar energy system, comprising the solar energy component.

[0018] Compared with the prior art, the heterojunction solar cell, module, and system of the present invention have the following advantages:

[0019] In the present invention, the first intrinsic layer and the second intrinsic layer are both at least three-layer stacked structures, and the at least six-layer stacked structure of the first intrinsic layer and the second intrinsic layer includes an intrinsic amorphous silicon layer, an intrinsic amorphous silicon oxide layer and an intrinsic amorphous silicon carbide layer, and at least one layer in the six-layer stacked structure is an intrinsic polycrystalline silicon layer, an intrinsic microcrystalline silicon layer or an intrinsic nanocrystalline silicon layer, thereby reducing the interface defect state density of the heterojunction solar cell to reduce the contact resistance. Moreover, compared with the single-layer intrinsic amorphous silicon layer in the prior art, the passivation effect of the heterojunction solar cell can be enhanced. At the same time, the electron transmission performance of the heterojunction solar cell can be enhanced, which is beneficial to the collection of photogenerated electrons and hole pairs by the electrode, and ultimately improves the conversion efficiency of the battery. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a schematic diagram of one embodiment of the utility model;

[0021] Figure 2 It is a schematic diagram of another embodiment of the present invention.

[0022] In the figure, 1 is a silicon substrate; 2 is a first intrinsic layer; 3 is a first doped layer; 4 is a first conductive layer; 5 is a first electrode; 6 is a second intrinsic layer; 7 is a second doped layer; 8 is a second conductive layer; 9 is a second electrode. DETAILED DESCRIPTION

[0023] The following embodiments are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0024] In the description of the present invention, it should be understood that the term "comprising" as used in the present specification refers to the presence of the features, integers, steps, operations, parts / components and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, parts / components, components and / or groups thereof. It should be understood that when we say a part / component is "connected" to another part / component, it can be directly connected to the other part / component, or there can be intermediate parts / components. The term "and / or" as used herein includes all or any one of the associated listed items and all combinations.

[0025] like Figure 1 As shown, the utility model relates to a heterojunction solar cell, comprising a silicon substrate 1, wherein one side of the silicon substrate 1 is provided with a first intrinsic layer 2, a first doped layer 3, a first conductive layer 4 and a first electrode 5 facing outward, and the other side of the silicon substrate 1 is provided with a second intrinsic layer 6, a second doped layer 7, a second conductive layer 8 and a second electrode 9 facing outward, wherein the first intrinsic layer 2 and the second intrinsic layer 6 are both three-layer stacked structures, and the six-layer stacked structure of the first intrinsic layer 2 and the second intrinsic layer 6 includes an intrinsic amorphous silicon layer, an intrinsic amorphous silicon oxide layer and an intrinsic amorphous silicon carbide layer, and at least one layer of the six-layer stacked structure is an intrinsic polycrystalline silicon layer, an intrinsic microcrystalline silicon layer or an intrinsic nanocrystalline silicon layer, and the doping types of the first doped layer 3 and the second doped layer 7 are opposite.

[0026] In the present invention, the first intrinsic layer 2 and the second intrinsic layer 6 are both three-layer stacked structures, and the six-layer stacked structure of the first intrinsic layer 2 and the second intrinsic layer 6 includes an intrinsic amorphous silicon layer, an intrinsic amorphous silicon oxide layer and an intrinsic amorphous silicon carbide layer, and at least one layer in the six-layer stacked structure is an intrinsic polycrystalline silicon layer, an intrinsic microcrystalline silicon layer or an intrinsic nanocrystalline silicon layer, thereby reducing the interface defect state density of the heterojunction solar cell to reduce the contact resistance, and compared with the single-layer intrinsic amorphous silicon layer in the prior art, it can enhance the passivation effect of the heterojunction solar cell, and at the same time, it can enhance the electron transmission performance of the heterojunction solar cell, which is beneficial to the collection of photogenerated electrons and hole pairs by the electrode, and ultimately improve the conversion efficiency of the battery.

[0027] like Figure 2As shown, in another embodiment, the first intrinsic layer 2 and the second intrinsic layer 6 are both four-layer stacked structures, and the eight-layer stacked structure of the first intrinsic layer 2 and the second intrinsic layer 6 includes an intrinsic amorphous silicon layer, an intrinsic amorphous silicon oxide layer and an intrinsic amorphous silicon carbide layer, and at least one layer of the eight-layer stacked structure is an intrinsic polycrystalline silicon layer, an intrinsic microcrystalline silicon layer or an intrinsic nanocrystalline silicon layer, which can also enhance the passivation effect of the heterojunction solar cell and enhance the electron transport performance of the heterojunction solar cell, which is beneficial to the collection of photogenerated electrons and hole pairs by the electrode, and ultimately improve the conversion efficiency of the battery.

[0028] In other embodiments, both the first intrinsic layer 2 and the second intrinsic layer 6 have a stacked structure with four or more layers.

[0029] In this embodiment, the first conductive layer 4 is a first transparent conductive film, and the second conductive layer 8 is a second transparent conductive film, thereby improving the transmittance of the light-receiving surface of the outermost layer of the first intrinsic layer 2 and improving the conversion efficiency of the heterojunction solar cell.

[0030] Preferably, the first conductive layer 4 and the second conductive layer 8 are both made of a transparent conductive metal compound, so that the first conductive layer 4 and the second conductive layer 8 have better light transmittance and conductive properties.

[0031] Specifically, the first conductive layer 4 and the second conductive layer 8 are made of indium tin oxide, tungsten-doped indium oxide, indium cerium oxide, aluminum-doped zinc oxide or zinc oxide, but are not limited thereto.

[0032] In this embodiment, the first conductive layer 4 and the second conductive layer 8 are deposited on the side of the first intrinsic layer 2 away from the silicon substrate 1 and the side of the second intrinsic layer 6 away from the silicon substrate 1 respectively by physical vapor deposition or reactive plasma deposition, so that the first conductive layer 4 can be stacked on the side of the first intrinsic layer 2 away from the silicon substrate 1, and the second conductive layer 8 can be stacked on the side of the second intrinsic layer 6 away from the silicon substrate 1.

[0033] In this embodiment, the first electrode 5 and the second electrode 9 are both made of one or more of nickel, silver, and copper to have high electrical conductivity.

[0034] In this embodiment, the first doped layer 3 is an N-type amorphous silicon layer, and the second doped layer 7 is a P-type amorphous silicon layer.

[0035] In summary, the embodiments of the present invention provide a heterojunction solar cell that can reduce the overall resistance of the heterojunction solar cell, enhance the passivation effect of the field effect, and increase the transmittance of the light-receiving surface, thereby further optimizing the conversion efficiency of the heterojunction solar cell.

[0036] The utility model also relates to a solar energy component, comprising the heterojunction solar cell, so as to improve the performance and conversion efficiency of the solar energy component.

[0037] The utility model also relates to a solar energy system, comprising the solar energy component, so as to improve the performance and conversion efficiency of the solar energy system.

[0038] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and replacements can be made without departing from the technical principles of the present invention. These improvements and replacements should also be regarded as the scope of protection of the present invention.

Claims

1. A heterojunction solar cell, characterized in that: The invention comprises a silicon substrate, wherein one side of the silicon substrate is provided with a first intrinsic layer, a first doped layer, a first conductive layer and a first electrode, and the other side of the silicon substrate is provided with a second intrinsic layer, a second doped layer, a second conductive layer and a second electrode. The first intrinsic layer and the second intrinsic layer are both at least three-layer stacked structures, and the at least six-layer stacked structures of the first intrinsic layer and the second intrinsic layer include an intrinsic amorphous silicon layer, an intrinsic amorphous silicon oxide layer and an intrinsic amorphous silicon carbide layer, and at least one layer of the at least six-layer stacked structures is an intrinsic polycrystalline silicon layer, an intrinsic microcrystalline silicon layer or an intrinsic nanocrystalline silicon layer, and the doping types of the first doped layer and the second doped layer are opposite.

2. The heterojunction solar cell according to claim 1, wherein: The first conductive layer is a first transparent conductive film.

3. The heterojunction solar cell according to claim 2, characterized in that: The second conductive layer is a second transparent conductive film.

4. The heterojunction solar cell according to claim 3, characterized in that: The first conductive layer and the second conductive layer are both made of a transparent conductive metal compound.

5. The heterojunction solar cell according to claim 4, characterized in that: The first conductive layer and the second conductive layer are made of indium tin oxide, tungsten-doped indium oxide, indium cerium oxide, aluminum-doped zinc oxide or zinc oxide.

6. The heterojunction solar cell according to claim 1, characterized in that: The first conductive layer and the second conductive layer are deposited on a side of the first intrinsic layer away from the silicon substrate and a side of the second intrinsic layer away from the silicon substrate respectively by physical vapor deposition or reactive plasma deposition.

7. The heterojunction solar cell according to claim 1, characterized in that: The first electrode and the second electrode are both made of one of nickel, silver and copper.

8. The heterojunction solar cell according to claim 1, characterized in that: The first doped layer is an N-type amorphous silicon layer, and the second doped layer is a P-type amorphous silicon layer.

9. A solar module, characterized in that: The invention comprises the heterojunction solar cell according to any one of claims 1 to 8.

10. A solar energy system, characterized in that: Comprising the solar module according to claim 9.

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