Enhanced ion source baffle for improving ion source pollution in coating process

Abstract

The utility model discloses an enlarged ion source baffle plate for improving ion source pollution in a coating process. The enlarged ion source baffle plate comprises a supporting part; the first connecting piece and the second connecting piece are spaced from each other up and down and are horizontally and rotatably mounted on the supporting part; and the ion source baffle plate is provided with a first baffle plate and a second baffle plate which are respectively arranged on the first connecting piece and the second connecting piece, and the first baffle plate and the second baffle plate are opened and closed by taking the supporting part as a rotating center so as to adjust the area of the ion source baffle plate. The first connecting piece, the second connecting piece and the supporting part are rotationally installed, the area of the ion source baffle can be adjusted by opening and closing the first baffle and the second baffle, adjustment can be further carried out according to different ion source positions of the coating machine, and it is ensured that the ion source baffle can completely shield unstable ions without bombarding a substrate or a film layer; and the area of the whole ion source baffle can be adjusted and expanded through the combination of the first baffle and the second baffle.

Description

Technical Field

[0001] The utility model relates to the technical field of film coating, and more particularly to an enlarged ion source baffle for improving ion source pollution in a film coating process. Background Art

[0002] The OTFC-1550 Optical Coating Machine requires an ion source shield during coating. During the coating process, the chamber shield can break and drop film material into the ion source area. This can cause problems such as source extinguishing, sparking, and discharge, leading to increased product defects and higher finish rejection. The ion source shield, when open, effectively shields the area above the ion source, minimizing product loss.

[0003] In the prior art, a baffle is typically installed above the ion source. Because the position and aperture of the ion source vary from one coating machine to another, the position and range of the emitted ion beam vary. Due to the limited area of ​​the baffle, it cannot be adjusted according to actual conditions, resulting in the baffle not being able to completely block the ion beam. Furthermore, if the area is insufficient, the chamber shield may collapse during ion source preheating or parameter switching, or the crucible may splash material near the ion source, preventing the baffle from completely blocking the beam. Utility Model Content

[0004] In view of the problems existing in the prior art, the purpose of the present invention is to provide an enlarged ion source baffle which improves ion source contamination during the coating process.

[0005] To solve the above problems, the present invention adopts the following technical solutions: An enlarged ion source baffle for improving ion source contamination during the coating process, comprising:

[0006] Support part;

[0007] a first connecting member and a second connecting member, wherein the first connecting member and the second connecting member are spaced apart from each other and are horizontally rotatably mounted on the support portion;

[0008] The ion source baffle comprises a first baffle and a second baffle respectively mounted on the first connecting member and the second connecting member. The first baffle and the second baffle are opened and closed with the support portion as the rotation center to adjust the area of ​​the ion source baffle.

[0009] Preferably, a connecting shaft is provided on the top of the support portion, and the first connecting member and the second connecting member are rotatably sleeved on the connecting shaft.

[0010] Preferably, a gasket is sleeved on the connecting shaft between the first connecting member and the second connecting member.

[0011] Preferably, a nut for locking the position of the first connecting member and the second connecting member is threadedly installed on the top of the connecting shaft.

[0012] Preferably, at least one positioning hole is provided on the first connecting member and the second connecting member, and a long strip-shaped through hole corresponding to the positioning hole is provided on the first baffle and the second baffle, and the positioning hole and the through hole are locked by a screw and a nut.

[0013] Preferably, the first baffle and the second baffle are semicircular, and their arc edges are arranged opposite to each other.

[0014] Preferably, the radius of the first baffle and the second baffle is 260 mm and the thickness is 3 mm.

[0015] Compared with the prior art, the present invention has the following beneficial effects:

[0016] The first connecting member and the second connecting member are rotatably installed with the support part, and the first baffle and the second baffle can be opened and closed to adjust the area of ​​the ion source baffle, and then can be adjusted according to the ion source position of different coating machines to ensure that the ion source baffle can completely block unstable ions and will not bombard the substrate or film layer; and the combination of the first baffle and the second baffle can be adjusted to expand the area of ​​the entire ion source baffle, effectively blocking the collapsed film material; the upper and lower intervals of the first baffle and the second baffle are set, and during the adjustment process, the first baffle and the second baffle can be partially overlapped with each other without a gap in the middle, ensuring complete blocking of the ion beam. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 The diagram shows that the ion source baffle completely blocks the ion source;

[0018] Figure 2 The diagram shows that the ion source baffle partially blocks the ion source;

[0019] Figure 3 This is a schematic diagram of the utility model after opening;

[0020] Figure 4 This is a schematic diagram of the utility model after closing;

[0021] Figure 5 is a schematic diagram of the first baffle and the second baffle;

[0022] Figure 6 This is the front view of the utility model;

[0023] Figure 7 It is a partial cross-sectional view of the support portion of the present utility model;

[0024] Figure 8 It is a partial cross-sectional view of the second baffle and the second connecting member.

[0025] Description of the numbers in the figure:

[0026] 1. Support part; 11. Connecting shaft; 12. Nut; 2. First connecting member; 3. Second connecting member; 31. Positioning hole; 4. Ion source baffle; 41. First baffle; 42. Second baffle; 5. Through hole; 6. Gasket; 7. Screw; 8. Nut; 9. Ion source. DETAILED DESCRIPTION

[0027] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0028] refer to Figure 1 When the baffle area is insufficient or the position is incorrect, the ion beam emitted by the ion source 9 will leak out from the side of the baffle, causing the ions to bombard the substrate or film layer; and the chamber guard plate may collapse the film material, or the crucible may splash material near the ion source 9, causing the ion source 9 to be contaminated.

[0029] Based on this, the present invention proposes the following embodiments. Figure 3-4 , an enlarged version of the ion source baffle 4 for improving ion source contamination in the coating process, comprising: a support portion 1; a first connecting member 2 and a second connecting member 3, wherein the first connecting member 2 and the second connecting member 3 are spaced apart from each other and are horizontally rotatably mounted on the support portion 1; the ion source baffle 4 has a first baffle 41 and a second baffle 42 respectively mounted on the first connecting member 2 and the second connecting member 3, wherein the first baffle 41 and the second baffle 42 are opened and closed with the support portion 1 as the rotation center to adjust the area of ​​the ion source baffle 4.

[0030] It is understood that the support portion 1 is a rotatable mounting component of the first connecting member 2 and the second connecting member 3, and can be, for example, a rod-shaped, block-shaped, or combined frame, but is not limited thereto. The rotatable mounting here can be achieved by, but is not limited to, an axial hole rotation fit installation, a bearing installation, a ball head installation, a hinged installation, etc. The first connecting member 2 and the second connecting member 3 are components for mounting the ion source baffle 4, and can be, for example, a rod-shaped structure, a plate-shaped structure, etc., but is not limited thereto. The first baffle 41 and the second baffle 42 are components that are combined to block the ion beam, and can be, for example, a square plate, a circular plate, a semicircular plate, a semi-elliptical plate, etc., but is not limited thereto.

[0031] In this way, by rotating the first and second connecting members 2 and 3 in conjunction with the support portion 1, the opening and closing distance of the first baffle 41 and the second baffle 42 can be adjusted, thereby adjusting the area of ​​the ion source baffle 4, thereby effectively shielding the ions and the film material from the ion source. Adjustment only requires swinging the first and second baffles 41 and 42, making the operation simple and convenient.

[0032] In some embodiments, reference Figure 6-7 , a connecting shaft 11 is provided on the top of the support part 1, and the first connecting member 2 and the second connecting member 3 are rotatably mounted on the connecting shaft 11. Furthermore, a gasket 6 is sleeved on the connecting shaft 11 between the first connecting member 2 and the second connecting member 3. Furthermore, a nut 12 is threadedly installed on the top of the connecting shaft 11 to lock the position of the first connecting member 2 and the second connecting member 3. It can be understood that the connecting shaft 11 and the first connecting member 2 and the second connecting member 3 adopt a shaft hole rotation fit, which is convenient to assemble. The gasket 6 is a component used to space the first connecting member 2 and the second connecting member 3 up and down. It can be one or more, and different thicknesses or different numbers of gaskets 6 can be used according to the spacing distance requirements of the first connecting member 2 and the second connecting member 3. The nut 12 is used for locking, and the first connecting member 2 and the second connecting member 3 can be pressed to lock the opening and closing distance of the first baffle 41 and the second baffle 42.

[0033] In some embodiments, reference Figure 5 and Figure 8 At least one positioning hole 31 is formed on the first connecting member 2 and the second connecting member 3, and a long strip-shaped through hole 5 corresponding to the positioning hole 31 is formed on the first baffle 41 and the second baffle 42. The positioning hole 31 and the through hole 5 are locked by a screw 7 and a nut 12. It can be understood that the number of positioning holes 31 and the through hole 5 can be set to correspond to the number of through holes 5, and the locking of the screw 7 and the nut 12 is more secure. The long strip-shaped through hole 5 has a certain length. In this way, by moving the locking position of the screw 7 in the through hole 5, the horizontal position of the first baffle 41 and the second baffle 42 can be adjusted, thereby adapting to different positions of the ion source 9.

[0034] In some embodiments, the first baffle 41 and the second baffle 42 are semicircular, with their arc sides facing each other. Since the emission port of the ion source 9 is circular, the emitted ion beam is also close to a circle. The combination of the semicircular first baffle 41 and the second baffle 42 better conforms to the shape of the ion beam emission and saves material.

[0035] In some embodiments, the first baffle 41 and the second baffle 42 have a radius of 260 mm and a bottom thickness of 3 mm. Prior to the application, the ion source baffle 4 was insufficient in area, resulting in incomplete shielding of the ion source 9, which made it easy for film material dust to fall into the ion source 9. This application, however, uses an enlarged ion source baffle 4 with a radius of 260 mm, ensuring complete shielding of the ion source 9 and reducing contamination of the ion source 9.

[0036] The above description is merely a preferred embodiment of the present invention; however, the scope of protection of the present invention is not limited thereto. Any person skilled in the art who, within the technical scope disclosed in the present invention, makes equivalent substitutions or modifications based on the technical solutions and improved concepts of the present invention shall be covered by the scope of protection of the present invention.

Claims

1. An enlarged ion source baffle for improving ion source contamination during coating process, characterized in that: include: Support portion (1); A first connecting member (2) and a second connecting member (3), wherein the first connecting member (2) and the second connecting member (3) are spaced apart from each other and are horizontally rotatably mounted on the support portion (1); The ion source baffle (4) comprises a first baffle (41) and a second baffle (42) respectively mounted on the first connecting member (2) and the second connecting member (3); the first baffle (41) and the second baffle (42) are opened and closed with the support portion (1) as the rotation center, thereby adjusting the area of ​​the ion source baffle (4).

2. The enlarged ion source baffle for improving ion source contamination during the coating process according to claim 1, characterized in that: A connecting shaft (11) is provided at the top of the support portion (1), and the first connecting member (2) and the second connecting member (3) are rotatably sleeved on the connecting shaft (11).

3. The enlarged ion source baffle for improving ion source contamination during the coating process according to claim 2, characterized in that: A gasket (6) is sleeved on the connecting shaft (11) between the first connecting member (2) and the second connecting member (3).

4. The enlarged ion source baffle for improving ion source contamination during the coating process according to claim 2 or 3, characterized in that: A nut (12) for locking the position of the first connecting member (2) and the second connecting member (3) is threadedly mounted on the top of the connecting shaft (11).

5. The enlarged ion source baffle for improving ion source contamination during the coating process according to claim 1, characterized in that: At least one positioning hole (31) is provided on the first connecting member (2) and the second connecting member (3); a through hole (5) in the form of an elongated strip corresponding to the positioning hole (31) is provided on the first baffle (41) and the second baffle (42); the positioning hole (31) and the through hole (5) are locked by a screw (7) and a nut (12).

6. The enlarged ion source baffle for improving ion source contamination during the coating process according to claim 1, characterized in that: The first baffle (41) and the second baffle (42) are semicircular, and their arc edges are arranged opposite to each other.

7. The enlarged ion source baffle for improving ion source contamination during the coating process according to claim 1, characterized in that: The radius of the first baffle (41) and the second baffle (42) is 260 mm, and the thickness is 3 mm.

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