Silicon carbide crystal growing furnace

Abstract

The utility model discloses a silicon carbide crystal growing furnace. The silicon carbide crystal growing furnace comprises a base, a growing chamber assembly, an upper furnace chamber and cover assembly, a furnace cover lifting system, a crucible lifting and discharging system, a heating system, a vacuum system and a C-shaped arm, the utility model relates to the technical field of silicon crystal growing furnaces, adopts a simple structural design, reduces the complexity of equipment, enables the operation and the maintenance to be simpler and more convenient, and improves the production efficiency. And as the structure is simple, the production cost is relatively low, the production cost of an enterprise is reduced, and the market competitiveness is improved. And a lower discharging structure is arranged, so that the requirement for frequently opening and closing the furnace cover is reduced, the operation difficulty and potential safety hazards are reduced, and the safety performance of equipment is improved. The structural design is convenient to repair and maintain, long-term stable operation of equipment is facilitated, and the equipment failure rate is reduced. And the discharging function is achieved, rapid replacement and taking-out of the crucible are achieved, and the production efficiency is improved. 8-inch silicon carbide crystals can be produced, the production capacity of equipment is improved, and the requirement of the market for large-size silicon carbide crystals is met.

Description

Technical Field

[0001] The utility model relates to the technical field of silicon crystal growth furnaces, in particular to a silicon carbide crystal growth furnace. Background Art

[0002] Currently, the known silicon carbide crystal furnace device has a complex structure and does not have a lower discharge structure. The device has poor safety performance, is not conducive to the repair and maintenance of the furnace body and internal structure, and can only produce 6-inch silicon carbide crystals. Utility Model Content

[0003] The purpose of the present invention is to provide a silicon carbide crystal growth furnace to solve the problems raised in the above background technology.

[0004] To achieve the above-mentioned object, the present invention provides the following technical solutions: a silicon carbide crystal growth furnace, comprising a base, a growth chamber assembly, an upper furnace chamber cover assembly, a furnace cover lifting system, a crucible lifting and discharging system, a heating system, a vacuum system, and a C-arm;

[0005] Base: The base is divided into two layers of frame structure, the upper layer is the water cooling frame, and the lower layer is the support frame;

[0006] Growth chamber assembly: The growth chamber assembly is a quartz tube vertical double-layer water-cooled structure with an internal size of 520 mm × 1200 mm. The growth chamber assembly is arranged in the upper frame of the base;

[0007] Upper furnace chamber cover assembly: The upper furnace chamber cover assembly is a cylindrical vertical double-layer water-cooled structure with an internal cavity of Ø538mm×120mm. The top of the cover is provided with an infrared thermometer interface. The upper end of the growth chamber assembly is connected to the upper furnace chamber cover assembly;

[0008] Furnace cover lifting system: The furnace cover lifting system is arranged on the upper frame of the base, and the furnace cover lifting system is connected to the upper furnace chamber furnace cover assembly;

[0009] Crucible lifting and discharging system: The crucible lifting and discharging system is arranged at the bottom of the growth chamber assembly;

[0010] Heating system: The heating system is an induction heating device, which is installed on the growth chamber assembly;

[0011] Vacuum system: The vacuum system is arranged on the lower frame of the base, and the measurement interface of the vacuum system is connected to the growth chamber assembly;

[0012] C-arm: The C-arm is arranged on the lower frame of the base, and the C-arm is located below the crucible lifting and discharging system.

[0013] Preferably, a fluororubber ring is used to seal the interface between the upper end of the growth chamber assembly and the upper furnace chamber cover assembly.

[0014] Compared with the prior art, the beneficial effects of the present invention are as follows: the present invention adopts a simple structural design, which reduces the complexity of the equipment, makes operation and maintenance easier, and improves production efficiency. Due to the simple structure, the production cost is relatively low, which is beneficial for enterprises to reduce production costs and improve market competitiveness. It has a lower discharge structure, which reduces the need to frequently open and close the furnace cover, reduces the difficulty of operation and safety hazards, and improves the safety performance of the equipment. The structural design facilitates repair and maintenance, is conducive to the long-term stable operation of the equipment, and reduces the equipment failure rate. It has a lower discharge function, which realizes the rapid replacement and removal of the crucible and improves production efficiency. It can produce 8-inch silicon carbide crystals, expands the production capacity of the equipment, and meets the market demand for large-size silicon carbide crystals. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a schematic diagram of the main structure of the utility model;

[0016] Figure 2 It is a schematic diagram of the top structure of the utility model.

[0017] In the figure: 1. Base; 2. Growth chamber assembly; 3. Upper furnace chamber cover assembly; 4. Furnace cover lifting system; 5. Crucible lifting and discharging system; 6. Heating system; 7. Vacuum system; 8. C-arm. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0019] See also Figure 1-2 The utility model provides a silicon carbide crystal growth furnace, comprising an upper furnace chamber cover assembly 3, a growth chamber assembly 2, a furnace cover lifting system 4, a base 1, a crucible lifting and discharging system 5, a heating system 6, a high vacuum system 7 and a C-arm 8;

[0020] Base 1: Base 1 is divided into two layers of frame structure, the upper layer is the water cooling frame, and the lower layer is the support frame;

[0021] Growth chamber assembly 2: The growth chamber assembly 2 is a quartz tube vertical double-layer water-cooled structure with an internal dimension of 520 mm × 1200 mm. The growth chamber assembly 2 is arranged in the upper frame of the base 1.

[0022] Upper furnace chamber cover assembly 3: The upper furnace chamber cover assembly 3 is a cylindrical vertical double-layer water-cooled structure with an internal cavity of Ø538mm × 120mm. The top of the cover is equipped with an infrared thermometer interface. The upper end of the growth chamber assembly 2 is connected to the upper furnace chamber cover assembly 3, and the interface is sealed with a fluororubber ring.

[0023] Furnace cover lifting system 4: The furnace cover lifting system 4 is arranged on the upper frame of the base 1 and is connected to the upper furnace chamber furnace cover assembly 3. The furnace cover lifting system 4 includes a cylinder lifting mechanism and a furnace cover lifting shaft. The cylinder is connected to the furnace cover lifting shaft, and the furnace cover lifting shaft is connected to the upper furnace chamber furnace cover assembly 3 to achieve vertical lifting of the furnace cover;

[0024] Crucible lifting and discharging system 5: The crucible lifting and discharging system 5 is arranged at the bottom of the growth chamber assembly 2. The crucible lifting and discharging system 5 includes a linear guide rail, a ball screw, an AC servo motor, a high-precision harmonic reducer, a stepper motor, a synchronous belt, imported high-precision bearings, a planetary reducer and a sample support rod. The linear guide rail and the ball screw are connected to the crucible support rod to realize the linear motion of the crucible. The AC servo motor and the high-precision harmonic reducer drive the slow motion, and the stepper motor and the synchronous belt drive the fast motion. The imported high-precision bearings and the planetary reducer realize the self-rotation motion of the crucible. The top of the sample support rod is provided with a thread and connected to the crucible. The crucible lifting device is externally mounted with a linear unit to realize the bottom discharge function of the crucible;

[0025] Heating system 6: The heating system 6 is an induction heating device, and the heating system 6 is provided on the growth chamber assembly 2;

[0026] Vacuum system 7: The vacuum system 7 is arranged on the lower frame of the base 1, and the measurement interface of the vacuum system 7 is connected to the growth chamber assembly 2;

[0027] C-arm 8 : The C-arm 8 is disposed on the lower frame of the base 1 , and is located below the crucible lifting and discharging system 5 .

[0028] Specifically, the interface between the upper end of the growth chamber assembly 2 and the upper furnace chamber cover assembly 3 is sealed with a fluororubber ring.

[0029] Although the embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations may be made to these embodiments without departing from the principles and spirit of the present invention, and the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A silicon carbide crystal growth furnace, characterized in that: It comprises a base (1), a growth chamber assembly (2), an upper furnace chamber cover assembly (3), a furnace cover lifting system (4), a crucible lifting and discharging system (5), a heating system (6), a vacuum system (7) and a C-arm (8); Base (1): The base (1) is divided into two-layer frame structure, the upper layer is a water cooling frame, and the lower layer is a support frame; Growth chamber assembly (2): the growth chamber assembly (2) is a quartz tube vertical double-layer water-cooled structure, having an internal cavity with an inner size of Φ520 mm × 1200 mm, and the growth chamber assembly (2) is arranged in the upper frame of the base (1); Upper furnace chamber cover assembly (3): The upper furnace chamber cover assembly (3) is a cylindrical vertical double-layer water-cooled structure with an internal dimension of Ø538 mm × 120 mm. An infrared thermometer interface is provided on the top of the cover. The upper end of the growth chamber assembly (2) is connected to the upper furnace chamber cover assembly (3); Furnace cover lifting system (4): the furnace cover lifting system (4) is arranged on the upper frame of the base (1), and the furnace cover lifting system (4) is connected to the upper furnace chamber furnace cover assembly (3); Crucible lifting and discharging system (5): the crucible lifting and discharging system (5) is arranged at the bottom of the growth chamber assembly (2); Heating system (6): the heating system (6) is an induction heating device, and the heating system (6) is arranged on the growth chamber assembly (2); Vacuum system (7): the vacuum system (7) is arranged on the lower frame of the base (1), and the measurement interface of the vacuum system (7) is connected to the growth chamber assembly (2); C-shaped arm (8): the C-shaped arm (8) is arranged on the lower frame of the base (1), and the C-shaped arm (8) is located below the crucible lifting and discharging system (5).

2. The silicon carbide crystal growth furnace according to claim 1, characterized in that: The interface between the upper end of the growth chamber assembly (2) and the upper furnace chamber cover assembly (3) is sealed with a fluororubber ring.

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