Sintering clamp and sintering equipment

Abstract

The utility model belongs to the technical field of semiconductor sintering, and particularly relates to a sintering clamp and sintering equipment. The sintering clamp comprises a bottom plate, a middle frame structure and gas circuit structures with gas supply channels, the middle frame structure is connected with one side plate face of the bottom plate, the middle frame structure and the bottom plate jointly define a containing cavity, the two gas circuit structures are connected with the middle frame structure, the two gas supply channels are communicated with the containing cavity, and the gas supply channels are communicated with the containing cavity. Wherein one gas supply channel is used for conveying reducing gas to the containing cavity, and the other gas supply channel is used for allowing the reducing gas to flow out of the containing cavity. According to the utility model, the influence of oxides on the semiconductor device on a welding interface can be eliminated, and the sintering quality of the semiconductor device is improved.

Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductor sintering, and in particular relates to a sintering fixture and sintering equipment. Background Art

[0002] With the promotion and application of third-generation semiconductor materials such as silicon carbide, the requirements for corresponding connection materials are becoming increasingly stringent, requiring them to have superior thermal, electrical and mechanical properties to ensure that the chip can operate normally in high-temperature environments (200°C or higher). At the same time, with the continuous improvement of high-power electronic packaging requirements for thermal conductivity, electrical conductivity and lead-free, silver sintering and copper sintering processes have received widespread attention. Silver sintering and copper sintering materials can be sintered at low temperatures and then have the characteristics of high-temperature service. In particular, copper, as a cheaper metal than silver, has high electrical conductivity and high thermal conductivity equivalent to silver, and its resistance to electromigration is excellent compared to silver, and has gradually become a research hotspot.

[0003] However, to achieve the above process, anti-oxidation is a necessary condition. In particular, copper sintering materials are very prone to oxidation during the sintering process, which leads to a decrease in the sintering quality of semiconductor devices and hinders the application of sintered copper technology. Utility Model Content

[0004] The purpose of the embodiments of the present application is to provide a sintering fixture, aiming to solve the problem of how to improve the sintering quality of semiconductor devices.

[0005] To achieve the above objectives, the technical solution adopted in this application is:

[0006] In a first aspect, a sintering fixture is provided, comprising: a base plate, a middle frame structure, and an air path structure having an air supply channel, wherein the middle frame structure is connected to one side plate surface of the base plate, and the middle frame structure and the base plate are jointly enclosed to form a accommodating cavity, two air path structures are provided, both of the air path structures are connected to the middle frame structure, and both of the air supply channels are connected to the accommodating cavity, wherein one of the air supply channels is used to transport reducing gas to the accommodating cavity, and the other air supply channel is used to supply the reducing gas to flow out of the accommodating cavity

[0007] In one embodiment, the middle frame structure includes a bottom frame connected to the bottom plate and a surface frame connected to the bottom frame, the air path structure is connected to the bottom frame, and an air supply groove is opened on the bottom frame, and the air supply groove connects the accommodating cavity and the air supply channel.

[0008] In one embodiment, the air supply groove is located on the surface of the bottom frame facing the bottom plate, and an air supply hole is further provided at the edge of the air supply groove, and the air supply hole connects the accommodating cavity and the air supply groove.

[0009] In one embodiment, a plurality of the air delivery holes are arranged at intervals along the extending direction of the air delivery groove.

[0010] In one embodiment, the middle frame structure also includes a film pressing frame located in the bottom frame and connected to the bottom plate, and the sintering fixture also includes a film made of flexible material, the edge of the film is clamped between the surface frame and the film pressing frame, and the film pressing frame has an air hole at the position corresponding to the air supply hole, and the air hole connects the accommodating cavity and the air supply hole.

[0011] In one embodiment, the face frame is further provided with a first sealing ring groove, in which a first sealing ring is provided, and the first sealing ring abuts against and presses the film.

[0012] In one embodiment, the face frame includes a ring cover plate connected to the bottom frame and a ring side plate connected to the ring cover plate. The ring side plate extends to the accommodating cavity and abuts the film pressing frame. The first sealing ring is opened on the ring side plate.

[0013] In one embodiment, two opposite surfaces of the bottom frame are respectively provided with a second sealing ring groove and a third sealing ring groove, and a second sealing ring and a third sealing ring are respectively provided in the second sealing ring groove and the third sealing ring groove.

[0014] In one embodiment, the air path structure includes an air path block and a heat insulation block connected to the air path block, the heat insulation block is connected to the bottom frame, and the air supply channel passes through the air path block and the heat insulation block.

[0015] In a second aspect, a sintering device is provided, which includes the sintering fixture.

[0016] The beneficial effects of the present application are that the sintering fixture includes: a base plate, a middle frame structure and an air path structure with an air supply channel, the two air path structures are respectively connected to the opposite ends of the middle frame structure, one of the air path structures is used to transport reducing gas to the accommodating chamber, and the other delivery structure is used to allow the reducing gas that undergoes the reduction reaction to flow out of the accommodating chamber, thereby reducing the oxide formed by copper on the semiconductor device in the accommodating chamber, reducing the oxidation of copper during the copper sintering process, improving the sintering quality of the semiconductor device, and facilitating the application of sintered copper technology. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the embodiments or exemplary technical descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0018] Figure 1 Schematic diagram of the three-dimensional structure of the sintering fixture provided in an embodiment of the present application;

[0019] Figure 2 yes Figure 1 A schematic cross-sectional view along the plate surface direction perpendicular to the bottom plate;

[0020] Figure 3 yes Figure 2 A local enlarged view of point A;

[0021] Figure 4 yes Figure 1 A schematic cross-sectional view along the direction parallel to the bottom plate;

[0022] Figure 5 It is a schematic diagram of the three-dimensional structure of a sintering device provided in another embodiment of the present application.

[0023] Among them, the reference numerals in the figures are:

[0024] 100, sintering fixture; 10, air path structure; 11, air path block; 12, heat insulation block; 13, air supply channel; 30, bottom plate; 20, middle frame structure; 21, surface frame; 22, bottom frame; 31, film; 40, accommodating cavity; 211, ring cover plate; 212, ring side plate; 51, first sealing ring groove; 52, second sealing ring groove; 53, third sealing ring groove; 221, air supply groove; 23, film pressing frame; 222, air supply hole; 231, air hole; 101, frame; DETAILED DESCRIPTION

[0025] In order to make the purpose, technical solutions and advantages of this application more clear, the following further describes this application in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0026] It should be noted that when a component is referred to as being "fixed on" or "disposed on" another component, it may be directly on the other component or indirectly on the other component. When a component is referred to as being "connected to" another component, it may be directly or indirectly connected to the other component. The terms "upper", "lower", "left", "right", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of description and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limitations on this application. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to the specific circumstances. The terms "first" and "second" are only used for the purpose of convenience of description and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features. "Multiple" means two or more, unless otherwise clearly and specifically defined.

[0027] See also Figures 1 to 3 The present embodiment provides a sintering fixture 100 for placing semiconductor devices. The sintering fixture 100 can improve the sintering quality of semiconductor devices. In this embodiment, the semiconductor device is sintered with copper. In other embodiments, silver sintering or other sintering materials can also be used. This is not a limitation and can be selected based on actual conditions.

[0028] See also Figures 1 to 3 The sintering fixture 100 includes: a base plate 30, a middle frame structure 20 and an air path structure 10 with an air supply channel 13. The base plate 30 can be laid flat on the machine table. The middle frame structure 20 is connected to the upwardly disposed surface of the base plate 30. The middle frame structure 20 and the base plate 30 are together formed to form a accommodating cavity 40. The semiconductor device can be placed in the accommodating cavity 40. Two air path structures 10 are provided, and both of the two air path structures 10 are connected to the middle frame structure 20. Both of the air supply channels 13 are connected to the accommodating cavity 40. One of the air supply channels 13 is used to transport reducing gas to the accommodating cavity 40, and the other air supply channel 13 is used to supply the reducing gas to flow out of the accommodating cavity 40.

[0029] See also Figures 1 to 3 It can be understood that the reducing gas can be atomized formic acid gas, which enters the accommodating cavity 40 through one of the gas supply channels 13, reacts with the semiconductor device in the accommodating cavity 40, and reduces the oxides on the semiconductor device, and then flows out of the accommodating cavity 40 from the other gas supply channel 13 to prevent the oxides from forming cavities on the welding interface, thereby improving the sintering quality of the semiconductor device.

[0030] See also Figures 1 to 3 The sintering fixture 100 provided in the embodiment of the present application includes: a base plate 30, a middle frame structure 20 and an air path structure 10 having an air supply channel 13. The two air path structures 10 are respectively connected to the opposite ends of the middle frame structure 20, one of which is used to supply reducing gas to the accommodating chamber 40, and the other supply structure is used to allow the reducing gas that undergoes the reduction reaction to flow out of the accommodating chamber 40, so as to reduce the oxide formed by copper on the semiconductor device in the accommodating chamber 40, reduce the oxidation of copper during the copper sintering process, improve the sintering quality of the semiconductor device, and facilitate the application of sintered copper technology.

[0031] It is understandable that during the sintering stage of the semiconductor device, a protective gas, such as nitrogen, may be delivered into the accommodating cavity 40 through one of the gas supply channels 13 to place the semiconductor device in a protective atmosphere during the sintering process.

[0032] See also Figures 1 to 3In some embodiments, the middle frame structure 20 includes a bottom frame 22 connected to the bottom plate 30 and a surface frame 21 connected to the bottom frame 22. The air path structure 10 is connected to the bottom frame 22, and an air supply groove 221 is provided on the bottom frame 22. The air supply groove 221 connects the accommodating cavity 40 and the air supply channel 13.

[0033] See also Figures 1 to 3 Optionally, the bottom frame 22 and the surface frame 21 are stacked vertically and can be detachably connected via threaded holes and screws, making the assembly of the middle frame structure 20 more stable. The gas path structure 10 is connected to the bottom frame 22, thereby providing a reliable gas supply channel 13 into the accommodating cavity 40. The gas supply groove 221 on the bottom frame 22 communicates with the accommodating cavity 40, optimizing the gas flow path and facilitating the uniform distribution of the reducing gas, so that the semiconductor devices can fully contact the reducing gas.

[0034] See also Figures 1 to 3 In some embodiments, the air supply groove 221 is located on the surface of the bottom frame 22 facing the bottom plate 30, and an air supply hole 222 is also opened on the edge of the air supply groove 221, and the air supply hole 222 connects the accommodating cavity 40 and the air supply groove 221.

[0035] See also Figures 1 to 3 Optionally, the air supply groove 221 is provided on the surface of the bottom frame 22 facing the bottom plate 30, and is connected to the accommodating chamber 40 through the air supply hole 222, so that the flow of gas in the accommodating chamber 40 can be more accurately controlled, so that the reducing gas can evenly penetrate the entire accommodating chamber 40, and the bottom plate 30 can cover the air supply groove 221, so that the reducing gas enters the accommodating chamber 40 from the air supply groove 221 through the air supply hole 222.

[0036] See also Figures 2 to 4 In some embodiments, a plurality of the air delivery holes 222 are arranged at intervals along the extension direction of the air delivery groove 221 .

[0037] See also Figures 2 to 4 Optionally, the air supply holes 222 are arranged at intervals along the extension direction of the air supply groove 221, ensuring that the gas can be evenly distributed in the accommodating chamber 40, reducing the risk of uneven local reducing gas concentration, ensuring the consistency of temperature and gas environment in various areas of the entire accommodating chamber 40, and improving the consistency and quality of the product.

[0038] It can be understood that two air supply grooves 221 are provided, and the two air supply grooves 221 correspond to the two air path structures 10 respectively. Air supply holes 222 are provided on the edges of the two air supply grooves 221. One of the air supply grooves 221 is used to transport reducing gas into the accommodating chamber 40, and the other air supply groove 221 is used to supply reducing gas to flow out of the accommodating chamber 40.

[0039] See also Figures 2 to 4 In some embodiments, the middle frame structure 20 further includes a film pressing frame 23 located in the bottom frame 22 and connected to the bottom plate 30. The sintering fixture 100 further includes a film 31 made of a flexible material. The edge of the film 31 is clamped between the surface frame 21 and the film pressing frame 23. The film pressing frame 23 has an air hole 231 at a position corresponding to the air supply hole 222. The air hole 231 connects the accommodating cavity 40 and the air supply hole 222.

[0040] See also Figures 2 to 4 Optionally, the thickness of film 31 ranges from 0.05 to 0.2 mm, such as 0.05 mm, 0.1 mm, 0.15 mm, or 0.2 mm. This is not a limitation and can be selected based on practical circumstances. By sandwiching the edge of film 31 between face frame 21 and lamination frame 23, an effective seal can be provided. The semiconductor device is positioned between film 31 and base plate 30, preventing outside air from entering between film 31 and base plate 30. The film 31 and base plate 30 together define a space for the semiconductor device.

[0041] Optionally, the film 31 may be a metal film, such as a stainless steel film. The film 31 may also be a Teflon film or a PI film. There is no limitation here and the selection may be made according to actual conditions.

[0042] In addition, the air holes 231 formed on the film pressing frame 23 ensure that the reducing gas can smoothly pass through the air supply holes 222 and enter the accommodating cavity 40 , thereby enhancing the gas circulation effect.

[0043] See also Figures 2 to 4 In some embodiments, the face frame 21 further defines a first sealing ring groove 51 , in which a first sealing ring is disposed. The first sealing ring abuts against and presses the film 31 .

[0044] Optionally, the first sealing ring groove 51 and the first sealing ring on the face frame 21 provide further sealing, so that the film 31 can be tightly pressed to prevent the reducing gas from leaking from the edge of the film 31, thereby ensuring the stability of the atmosphere in the area between the base plate 30 and the film 31.

[0045] It is understandable that the film 31 is a consumable item and can be replaced by separating the surface frame 21 and the film pressing frame 23 .

[0046] See also Figures 2 to 4In some embodiments, the face frame 21 includes a ring cover plate 211 connected to the bottom frame 22 and a ring side plate 212 connected to the ring cover plate 211. The ring side plate 212 extends to the accommodating cavity 40 and abuts the film pressing frame 23. The first sealing ring is opened on the ring side plate 212.

[0047] See also Figures 2 to 4 Optionally, the structure of the ring cover plate 211 and the ring side plate 212 enhances the mechanical strength of the face frame 21. The ring side plate 212 is located within the base frame 22 and extends toward the film pressing frame 23, enhancing the airtightness of the sintering fixture 100. A first sealing ring is provided on the ring side plate 212, ensuring close contact and sealing of the film 31, thereby better controlling the reducing gas within the accommodating chamber 40.

[0048] See also Figures 2 to 4 In some embodiments, a second sealing ring groove 52 and a third sealing ring groove 53 are respectively formed on two opposite surfaces of the bottom frame 22, and a second sealing ring and a third sealing ring are respectively provided in the second sealing ring groove 52 and the third sealing ring groove 53.

[0049] Optionally, the second sealing ring groove 52 and the third sealing ring groove 53 provided on the bottom frame 22 are respectively installed with a second sealing ring and a third sealing ring, thereby providing a multiple sealing structure for the sintering fixture 100. This enhances the sealing performance of the sintering fixture 100, reduces the possibility of gas leakage, and ensures an efficient and stable sintering process.

[0050] Optionally, the first sealing ring, the second sealing ring and the third sealing ring may all be made of rubber material, which is resistant to high temperatures, strong oxidants, oils, acids and alkalis and is generally used in high temperature, high vacuum and high pressure environments.

[0051] See also Figures 1 to 4 In some embodiments, the air path structure 10 includes an air path block 11 and a heat insulation block 12 connected to the air path block 11 , the heat insulation block 12 is connected to the bottom frame 22 , and the air supply channel 13 passes through the air path block 11 and the heat insulation block 12 .

[0052] See also Figures 1 to 4 Optionally, the arrangement of the gas path block 11 and the heat insulation block 12 in the gas path structure 10 effectively prevents the conduction of heat during gas transportation, thereby preventing the heat from being conducted to the gas path block 11 during the heating process of the base plate 30, thereby improving the heat insulation performance of the sintering fixture 100.

[0053] See also Figures 1 to 4The gas supply channel 13 runs through the gas path block 11 and the insulation block 12, which optimizes the transmission path of the reducing gas, reduces the problem of unstable gas flow caused by heat, and ensures the temperature and atmosphere control of the sintering process.

[0054] Optionally, among the two air circuit blocks 11, the air supply channel 13 of one air circuit block 11 is used to intake air into the accommodating chamber 40, and the air supply channel 13 of the other air circuit block 11 is used to exhaust air from the accommodating chamber 40. The air supply channel 13 used for exhaust can be closed, and then the air circuit block 11 used for intake air can be connected to a vacuum pump through a pipeline. The accommodating chamber 40 can be evacuated into a vacuum state by the vacuum pump, thereby providing a vacuum-protected sintering environment for the semiconductor device to be sintered in the accommodating chamber 40.

[0055] It can also be understood that the gas in the accommodating chamber 40 can be first evacuated to put the accommodating chamber 40 in a vacuum state, and then a protective gas can be quickly filled into the accommodating chamber 40. The protective gas can be an inert gas, such as nitrogen, so as to quickly reduce the oxygen content in the accommodating chamber 40 and provide an inert gas-protected sintering environment for the semiconductor device to be sintered in the accommodating chamber 40.

[0056] See also Figure 5 The present invention also proposes a sintering device, which includes a sintering fixture 100. The specific structure of the sintering fixture 100 refers to the above embodiment. Since the present sintering device adopts all the technical solutions of all the above embodiments, it also has all the beneficial effects brought by the technical solutions of the above embodiments, which will not be described one by one here.

[0057] See also Figure 5 Optionally, the sintering apparatus further includes a frame 101 and a heating block. The sintering fixture 100 is secured to the frame 101, and the heating block is used to heat the base plate 30, thereby transferring heat to the semiconductor device. The sintering fixture 100 ensures efficient gas flow, good sealing, and superior thermal insulation during the sintering process.

[0058] The above are merely optional embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application should be included within the scope of the claims of the present application.

Claims

1. A sintering fixture, characterized in that: include: A base plate, a middle frame structure and an air path structure with an air supply channel, the middle frame structure is connected to one side plate surface of the base plate, and the middle frame structure and the base plate together enclose a accommodating cavity, two air path structures are provided, both of the air path structures are connected to the middle frame structure, and both of the air supply channels are connected to the accommodating cavity, one of the air supply channels is used to transport reducing gas to the accommodating cavity, and the other air supply channel is used to supply the reducing gas to flow out of the accommodating cavity.

2. The sintering fixture according to claim 1, wherein: The middle frame structure includes a bottom frame connected to the bottom plate and a surface frame connected to the bottom frame. The air path structure is connected to the bottom frame, and an air supply groove is opened on the bottom frame. The air supply groove connects the accommodating cavity and the air supply channel.

3. The sintering fixture according to claim 2, wherein: The air delivery groove is located on the surface of the bottom frame facing the bottom plate, and an air delivery hole is further provided on the edge of the air delivery groove, and the air delivery hole communicates with the accommodating cavity and the air delivery groove.

4. The sintering fixture according to claim 3, wherein: A plurality of the air delivery holes are arranged at intervals along the extending direction of the air delivery groove.

5. The sintering fixture according to claim 3, wherein: The middle frame structure also includes a film pressing frame located in the bottom frame and connected to the bottom plate. The sintering fixture also includes a film made of flexible material. The edge of the film is clamped between the surface frame and the film pressing frame. The film pressing frame has an air hole at the position corresponding to the air supply hole, and the air hole connects the accommodating cavity and the air supply hole.

6. The sintering fixture according to claim 5, wherein: The face frame is further provided with a first sealing ring groove, in which a first sealing ring is provided. The first sealing ring abuts against and presses the film.

7. The sintering fixture according to claim 6, wherein: The face frame includes a ring cover plate connected to the bottom frame and a ring side plate connected to the ring cover plate. The ring side plate extends to the accommodating cavity and abuts against the film pressing frame. The first sealing ring is opened on the ring side plate.

8. The sintering fixture according to claim 6, wherein: A second sealing ring groove and a third sealing ring groove are respectively formed on two opposite surfaces of the bottom frame. A second sealing ring groove and a third sealing ring are respectively provided in the second sealing ring groove and the third sealing ring groove.

9. The sintering fixture according to any one of claims 2 to 5, characterized in that: The air path structure includes an air path block and a heat insulation block connected to the air path block. The heat insulation block is connected to the bottom frame, and the air supply channel passes through the air path block and the heat insulation block.

10. A sintering device, characterized in that: The sintering fixture comprises the sintering fixture as described in any one of claims 1 to 9.

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