Semiconductor cleaning equipment and chuck structure thereof

Abstract

The utility model provides a semiconductor cleaning device and a chuck structure thereof, comprising a chuck base body used for bearing a wafer, a gas inlet channel is arranged in the chuck base body, the gas inlet channel is provided with a plurality of gas outlets on a first surface of the chuck base body opposite to the wafer, and the gas outlets are used for bearing the wafer through blown gas; a first annular boss is arranged on the first surface, the upper surface of the first annular boss is higher than the lower surface of a wafer borne by gas, the inner diameter of the first annular boss is larger than the diameter of the wafer, and a first flow guide channel is formed between the inner circumferential face of the first annular boss and the edge of the wafer. According to the scheme, the corrosion area of the film layer on the lower surface of the wafer can be reduced, and advanced process requirements are met.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor manufacturing, in particular to semiconductor cleaning equipment and a chuck structure thereof. Background Art

[0002] With the advancement of integrated circuit manufacturing technology, wafer processing has become increasingly complex. This process includes multiple processes such as film growth and cleaning. When film growth is performed on the front side of the wafer, unwanted extra film layers may appear on the entire back side of the wafer or near the edge. These extra layers must be removed to prevent them from warping the wafer. Currently, single-wafer wet backside cleaning equipment is commonly used to remove these extra layers.

[0003] However, when the back of the wafer is sprayed with chemical liquid, the chemical liquid on the back of the wafer will flow along the edge of the wafer to a short distance on the front of the wafer. This phenomenon will cause the film layer on the front of the wafer to be corroded. If the corrosion area (i.e., undercut) is too large (for example, the width from the edge of the wafer to the center exceeds 0.3mm), it will not meet the requirements of advanced processes. Utility Model Content

[0004] The utility model aims to solve at least one of the technical problems existing in the prior art, and proposes a chuck structure and semiconductor cleaning equipment, which can avoid the problem that the corrosion area of ​​the front film layer of the wafer is too large, resulting in the inability to meet advanced process requirements.

[0005] To achieve the purpose of the present invention, a chuck structure for semiconductor cleaning equipment is provided, comprising a chuck base for carrying a wafer, an air inlet channel being provided in the chuck base, the air inlet channel having a plurality of air outlets on a first surface of the chuck base opposite to the wafer, for carrying the wafer by blown gas;

[0006] A first annular boss is provided on the first surface, the upper surface of the first annular boss is higher than the lower surface of the wafer carried by the gas, the inner diameter of the first annular boss is larger than the diameter of the wafer, and a first guide channel is formed between the inner circumferential surface of the first annular boss and the edge of the wafer.

[0007] In some embodiments, a second annular boss is further provided on the first surface, and the second annular boss is provided on the inner side of the first annular boss;

[0008] A second guide channel is formed between the upper surface of the second annular boss and the lower surface of the wafer on which the gas is carried.

[0009] In some embodiments, an annular groove is formed between the outer circumferential surface of the second annular boss and the inner circumferential surface of the first annular boss.

[0010] In some embodiments, a bottom surface of the annular groove is flush with or lower than the first surface.

[0011] In some embodiments, at least one first fluid channel is provided in the first annular boss, and two ends of the first fluid channel are respectively located on the inner circumference and the outer circumference of the first annular boss;

[0012] The first fluid passage is in communication with the annular groove.

[0013] In some embodiments, at least one second fluid channel is provided in the second annular boss, and two ends of the second fluid channel are respectively located on the inner circumference and the outer circumference of the second annular boss;

[0014] The second fluid passage is in communication with the annular groove.

[0015] In some embodiments, an outer diameter of the second annular boss is smaller than a diameter of the wafer.

[0016] In some embodiments, the outer circumferential surface of the second annular boss is coplanar with the inner circumferential surface of the first annular boss.

[0017] In some embodiments, at least one first fluid channel is provided in the first annular boss, and two ends of the first fluid channel are respectively located on the inner circumference and the outer circumference of the first annular boss;

[0018] At least one second fluid channel is provided in the second annular boss, and two ends of the second fluid channel are respectively located on the inner circumferential surface and the outer circumferential surface of the second annular boss;

[0019] The second fluid channel is in one-to-one communication with the first fluid channel.

[0020] In some embodiments, at least one first fluid channel is provided in the first annular boss, and two ends of the first fluid channel are respectively located on the inner circumference and the outer circumference of the first annular boss.

[0021] As another technical solution, the present invention also provides a semiconductor cleaning equipment, including a process chamber, a robot and a spray device, wherein a rotatable and liftable chuck structure is provided in the process chamber for carrying a wafer; the spray device includes at least one swing arm for spraying a cleaning fluid, and the chuck structure adopts the above-mentioned chuck structure provided by the present invention.

[0022] The utility model has the following beneficial effects:

[0023] The chuck structure provided by the present invention has a first annular boss provided on a first surface of the chuck base opposite to the wafer, the upper surface of the first annular boss being higher than the lower surface of the wafer supported by the gas blown out from the outlet of the air inlet channel, the inner diameter of the first annular boss being larger than the diameter of the wafer, and a first guide channel being formed between the inner circumference of the first annular boss and the edge of the wafer. When the gas blown out from the outlet of the air inlet channel flows through the first guide channel along the lower surface of the wafer, the gas will change from a horizontal direction along the lower surface of the wafer to an upward flow in a direction approximately perpendicular to the lower surface of the wafer under the guidance of the first guide channel. Since the approximately vertical flow direction is more likely to block the downward flow of the cleaning fluid at the edge of the wafer than the horizontal direction, the first guide channel can be used to strengthen the effect of the gas blown out from the outlet of the air inlet channel in blocking the flow of the cleaning fluid to the lower surface of the wafer, thereby reducing the corrosion area of ​​the film layer on the lower surface of the wafer and meeting the requirements of advanced processes.

[0024] The semiconductor cleaning equipment provided by the utility model can reduce the corrosion area of ​​the film layer on the lower surface of the wafer by adopting the above-mentioned chuck structure provided by the utility model, thereby meeting the requirements of advanced processes. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 A three-dimensional diagram of a chuck structure provided for related art;

[0026] Figure 2 A schematic diagram of the gas flow path of a chuck structure carrying a wafer provided in the related art;

[0027] Figure 3 A schematic diagram of the corrosion area on the lower surface of a wafer after a cleaning process in the related art;

[0028] Figure 4 A three-dimensional diagram of a first chuck structure provided by an embodiment of the present utility model;

[0029] Figure 5 for Figure 4 A partial stereoscopic view of the first chuck structure when carrying a wafer;

[0030] Figure 6 for Figure 4 A cross-sectional view of the first chuck structure when carrying a wafer;

[0031] Figure 7 for Figure 4 Schematic diagram of the gas flow path of the first chuck structure when carrying a wafer;

[0032] Figure 8 A perspective view of a second chuck structure provided by an embodiment of the present utility model;

[0033] Figure 9 for Figure 8 A cross-sectional view of the second chuck structure when carrying a wafer;

[0034] Figure 10 for Figure 8 Schematic diagram of the gas flow path of the second chuck structure when carrying a wafer;

[0035] Figure 11 A three-dimensional diagram of a third chuck structure provided by an embodiment of the present utility model;

[0036] Figure 12 for Figure 11 A cross-sectional view of the third chuck structure when carrying a wafer;

[0037] Figure 13 for Figure 11 Schematic diagram of the gas flow path of the third chuck structure when carrying a wafer;

[0038] Figure 14 A schematic diagram of the flow paths of gas and cleaning fluids of the fourth chuck structure provided by an embodiment of the present invention when carrying a wafer;

[0039] Figure 15 A schematic diagram of the flow paths of gas and cleaning fluids of the fifth chuck structure provided by an embodiment of the present invention when carrying a wafer;

[0040] Figure 16 A schematic diagram of the flow paths of gas and cleaning fluids of the sixth chuck structure provided by an embodiment of the present invention when carrying a wafer;

[0041] Figure 17 A perspective view of a seventh chuck structure provided by an embodiment of the present utility model;

[0042] Figure 18 for Figure 17 Schematic diagram of gas and cleaning fluid flow paths for the seventh chuck structure when carrying a wafer;

[0043] Figure 19 A three-dimensional diagram of an eighth chuck structure provided by an embodiment of the present utility model;

[0044] Figure 20 for Figure 19 Schematic diagram of gas and cleaning fluid flow paths for the eighth chuck structure when carrying a wafer;

[0045] Figure 21 A schematic diagram of the flow paths of gas and cleaning fluids of the ninth chuck structure provided by an embodiment of the present invention when carrying a wafer;

[0046] Figure 22A schematic structural diagram of a semiconductor cleaning device provided by an embodiment of the present utility model;

[0047] Figure 23 A three-dimensional diagram of a manipulator used in an embodiment of the present utility model;

[0048] Figure 24 This is a three-dimensional diagram of the robot arm used in an embodiment of the present utility model when picking up and placing a wafer. DETAILED DESCRIPTION

[0049] In order to enable those skilled in the art to better understand the technical solution of the present invention, the chuck structure and semiconductor cleaning equipment provided by the present invention are described in detail below with reference to the accompanying drawings.

[0050] In related technologies, such as Figure 1 and Figure 2 As shown, the chuck structure 01 includes a chuck base 011 for carrying a wafer. An air inlet channel is provided in the chuck base 011. The air inlet channel has a plurality of air outlets 013 on a first surface 012 of the chuck base 011 opposite to the wafer 014, for carrying the wafer 014 by blowing gas. The flow direction of the gas blown out by each air outlet 013 is as shown in FIG. Figure 2 As shown in FIG. 1 , the gas blown out from the outlet 013 of the air inlet channel flows to the lower surface of the wafer 014 and then flows horizontally along the lower surface of the wafer 014. However, when the upper surface of the wafer 014 is subjected to the liquid spraying process, the liquid 015 on the upper surface of the wafer 014 will flow along the edge of the wafer to the lower surface of the wafer 014 for a short distance. This phenomenon will cause the film layer on the lower surface of the wafer 014 to be corroded. The corroded area is shown in FIG. Figure 3 As shown in area A distributed at the edge of the lower surface of the wafer, if the size of the etched area (i.e., undercut) is too large (for example, the width B from the edge of the wafer to the center exceeds 0.3 mm), it will not meet the requirements of advanced processes.

[0051] To solve the above problems, please also refer to Figures 4 to 7 The present invention provides a chuck structure 1 for semiconductor cleaning equipment, including a chuck base 11 for supporting a wafer 2. An air inlet channel (not shown) is provided in the chuck base 11. The air inlet channel has a plurality of air outlets 13 on a first surface 12 of the chuck base 11 opposite the wafer 2. The air inlet channel is used to support the wafer 2 by blowing gas. That is, the wafer 2 is suspended above the first surface 12 by the airflow. The gas is, for example, an inert gas such as nitrogen.

[0052] In some embodiments, as Figure 4As shown, multiple gas outlets 13 are spaced apart along the circumference of first surface 12 to uniformly eject gas around wafer 2, thereby ensuring that wafer 2 is stably supported by the gas. The direction of gas ejection from each gas outlet 13 can be vertically upward or tilted relative to the vertical toward the edge of wafer 2. This is not a limitation of the present invention, as long as the wafer 2 can be suspended above first surface 12 by the airflow. In actual applications, the diameter of the circle in which the multiple gas outlets 13 are located can be set according to specific needs.

[0053] On this basis, a first annular boss 14 is provided on the first surface 12. The upper surface of the first annular boss 14 is higher than the lower surface of the wafer 2 supported by the gas. The inner diameter of the first annular boss 14 is larger than the diameter of the wafer 2. A first guide channel 16 is formed between the inner circumference of the first annular boss 14 and the edge of the wafer 2. Figure 6 As shown, the spacing between the lower surface of the wafer 2 supported by the gas and the first surface 12 is a first spacing H1, and the spacing between the upper surface of the first annular boss 14 and the first surface 12 is a second spacing H2, and the second spacing H2 is greater than the first spacing H1. Moreover, because the inner circumferential surface size of the first annular boss 14 (i.e., the inner diameter of the first annular boss 14) is greater than the diameter of the wafer 2, this causes the lower surface of the wafer 2 supported by the gas to be located in the space enclosed by the inner circumferential surface of the first annular boss 14, thereby forming a first guide channel 16 between the inner circumferential surface of the first annular boss 14 and the edge of the wafer 2. The first guide channel 16 is annular, and the outer circumferential channel wall is formed by the inner circumferential surface of the first annular boss 14, and the inner circumferential channel wall is formed by the edge of the wafer 2.

[0054] like Figure 7 As shown, after the gas blown out from the outlet 13 of the air inlet channel flows to the lower surface of the wafer 2, it will flow along the lower surface of the wafer 2 to the above-mentioned first guide channel 16. At this time, under the guidance of the first guide channel 16, the gas will change from the horizontal direction along the lower surface of the wafer 2 to flow upward in a direction approximately perpendicular to the lower surface of the wafer 2. The airflow direction is as shown in FIG. Figure 7 As shown in FIG. Since a nearly vertical flow direction is more likely to block the downward flow of the cleaning fluid at the edge of the wafer 2 than a horizontal flow direction, the first flow guide channel 16 can enhance the effect of the gas blown out from the gas outlet 13 of the gas inlet channel in blocking the flow of the cleaning fluid to the lower surface of the wafer 2, thereby reducing the corrosion area of ​​the film layer on the lower surface of the wafer 2 and meeting the requirements of advanced processes.

[0055] Specifically, each air outlet 13 of the air inlet channel is located in the space surrounded by the inner circumference of the first annular boss 14. Under the blocking effect of the first annular boss 14, the gas blown out from each air outlet 13 can only flow out through the first guide channel 16. Figure 2The gas blown out from each gas outlet 013 shown flows out from between the first surface 012 and the lower surface of the wafer 014. Under the condition of the same gas flow rate, the air flow speed and pressure flowing through the first guide channel 16 of the present application are higher. Combined with the change of the air flow direction under the guidance of the first guide channel 16 (i.e., flowing upward in a direction approximately perpendicular to the lower surface of the wafer 2), the ability of the gas to block the downward flow of the cleaning fluid at the edge of the wafer 2 can be enhanced, thereby reducing the corrosion area of ​​the film layer on the lower surface of the wafer 2.

[0056] In a specific embodiment, the outer peripheral surface of the first annular boss 14 is coplanar with the outer peripheral surface of the chuck base 11 .

[0057] In some embodiments, as Figure 6 As shown, in order to effectively change the airflow direction to flow upward in a direction approximately perpendicular to the lower surface of the wafer 2 on the basis that the second spacing H2 is greater than the first spacing H1, the second spacing H2 is greater than or equal to 0.1 mm and less than or equal to 10 mm.

[0058] In some embodiments, the radial width D1 of the first annular boss 14 , ie, half of the difference between the outer diameter and the inner diameter of the first annular boss 14 , is greater than or equal to 0.1 mm and less than or equal to 10 mm, preferably 5 mm.

[0059] In some embodiments, the radial distance D2 between the inner circumference of the first annular boss 14 and the edge of the wafer 2, that is, half of the difference between the inner diameter of the first annular boss 14 and the diameter of the wafer 2, is greater than or equal to 0.1 mm and less than or equal to 10 mm.

[0060] In some embodiments, the first distance H1 is greater than or equal to 0.1 mm and less than or equal to 1 mm.

[0061] In some embodiments, please refer to Figures 8 to 10 On the basis of the first annular boss 14 provided on the first surface 12, a second annular boss 17 is further provided on the first surface 12. The second annular boss 17 is provided on the inner side of the first annular boss 14. A second guide channel 19 is formed between the upper surface of the second annular boss 17 and the lower surface of the wafer 2 on which the gas is carried. After the gas blown out from the outlet 13 of the air inlet channel flows to the lower surface of the wafer 2, it will flow along the lower surface of the wafer 2 in sequence through the second guide channel 19 and the first guide channel 16. The airflow direction is as follows: Figure 10 As shown. Figure 9As shown, since the width (ΔH) of the second guide channel 19 in the vertical direction is smaller than the first spacing H1, the air flow velocity and pressure flowing through the second guide channel 19 become larger, thereby increasing the air flow velocity and pressure flowing through the above-mentioned first guide channel 16. The increase in air flow velocity and pressure can further enhance the ability of the gas to block the downward flow of the cleaning fluid at the edge of the wafer 2, thereby further reducing the corrosion area of ​​the film layer on the lower surface of the wafer 2.

[0062] In order to more effectively increase the airflow speed and pressure, the width (ΔH) should be as small as possible. In some embodiments, the width (ΔH) is greater than or equal to 0.1 mm and less than or equal to 1 mm. Figure 9 As shown, the distance between the upper surface of the second annular boss 17 and the first surface 12 is a third distance H3, and the third distance H3 is smaller than the first distance H1. The difference between the first distance H1 and the third distance H3 is the width (ΔH).

[0063] In some embodiments, the third distance H3 is greater than or equal to 0.1 mm and less than or equal to 10 mm.

[0064] In order to minimize the upward pressure component exerted on the wafer 2 by the gas flowing through the second guide channel 19, so as to ensure that the height of the wafer 2 lifted by the gas is maintained unchanged at the first spacing H1, the radial width of the second annular boss 17 should be as small as possible. In some embodiments, the radial width of the second annular boss 17 is greater than 0.1 mm and less than or equal to 10 mm.

[0065] In some embodiments, the outer diameter of the second annular projection 17 is smaller than the diameter of the wafer 2. This allows for a radial spacing D3 between the outer circumference of the second annular projection 17 and the edge of the wafer 2. This radial spacing D3 is correlated with the size of the etched region (e.g., the width from the wafer edge to the center). Specifically, with other parameters remaining the same, the smaller the radial spacing D3, the smaller the size of the etched region (e.g., the width from the wafer edge to the center). Conversely, the larger the radial spacing D3, the larger the size of the etched region (e.g., the width from the wafer edge to the center). In some embodiments, the radial spacing D3 is greater than or equal to 0.01 mm and less than or equal to 1 mm.

[0066] In some embodiments, when the diameter of the wafer 2 is 300 mm (or 12 inches), the outer diameter of the second annular boss 17 is greater than or equal to 290 mm and less than or equal to 310 mm.

[0067] In some embodiments, as Figures 8 to 10As shown, an annular groove 18 is formed between the outer circumferential surface of the second annular boss 17 and the inner circumferential surface of the first annular boss 14. Specifically, the outer diameter of the second annular boss 17 is smaller than the inner diameter of the first annular boss 14, so that a gap exists between the outer circumferential surface of the second annular boss 17 and the inner circumferential surface of the first annular boss 14, thereby forming the annular groove 18. This annular groove 18 can store any cleaning fluid that splashes back into the annular groove 18, preventing the back-splashed cleaning fluid from flowing toward the center of the chuck base 11. Furthermore, in some embodiments, the bottom surface of the annular groove 18 can be flush with or lower than the first surface 12.

[0068] In other embodiments, please refer to Figures 11 to 13 , the outer circumferential surface of the second annular boss 17 is coplanar with the inner circumferential surface of the first annular boss 14. That is, the outer diameter of the second annular boss 17 is equal to the inner diameter of the first annular boss 14. In this case, the second annular boss 17 and the first annular boss 14 can be connected as a whole, or can be a split structure that contacts or is fixedly connected to each other. Moreover, the second guide channel 19 is formed between the upper surface or the inner circumferential edge of the second annular boss 17 and the lower surface or the edge of the wafer 2 on which the gas is carried. In some embodiments, as Figure 12 As shown, the radial width D4 of the second annular boss 17 is greater than 0.1 mm and less than or equal to 10 mm.

[0069] In the embodiment where the outer circumferential surface of the second annular boss 17 is coplanar with the inner circumferential surface of the first annular boss 14, as shown in FIG. Figure 14 As shown, at least one first fluid channel 141 is provided in the first annular boss 14, and the two ends of the first fluid channel 141 are respectively located on the inner circumference and the outer circumference of the first annular boss 14. At least one second fluid channel 171 is provided in the second annular boss 17, and the two ends of the second fluid channel 171 are respectively located on the inner circumference and the outer circumference of the second annular boss 17; and the second fluid channel 171 is connected to the first fluid channel 141 in a one-to-one correspondence. With the help of the second fluid channel 171 and the first fluid channel 141, the cleaning fluid splashed back onto the second annular boss 17 and the first surface 12 can flow to the outside of the first annular boss 14 in sequence through the second fluid channel 171 and the first fluid channel 141, that is, the flow path of the cleaning fluid splashed back onto the second annular boss 17 and the first surface 12 is increased, as shown in FIG. Figure 14 As shown by the dotted arrows in the figure, the cleaning fluid on the second annular boss 17 and the first surface 12 on its inner circumference is smoothly discharged to prevent it from being retained on the second annular boss 17 and the first surface 12. In some embodiments, both the second fluid channel 171 and the first fluid channel 141 can be multiple and spaced apart along the circumference of the inner circumference of the first annular boss 14 (i.e., the outer circumference of the second annular boss 17).

[0070] In the embodiment where the first annular boss 14 is provided on the first surface 12 but the second annular boss 17 is not provided, as shown in FIG. Figure 15 As shown, at least one first fluid channel 141 is provided in the first annular boss 14, and the two ends of the first fluid channel 141 are respectively located on the inner circumferential surface and the outer circumferential surface of the first annular boss 14. By providing at least one first fluid channel 141, the cleaning fluid splashed onto the first annular boss 14 and the first surface 12 can flow to the outside of the first annular boss 14 through the first fluid channel 141, that is, the flow path of the cleaning fluid splashed onto the first annular boss 14 and the first surface 12 is increased, as shown in FIG. Figure 15 As shown by the dotted arrow in . Specifically, in the process of the wafer 2 rotating synchronously with the chuck base 11, the cleaning fluid 21 at the edge of the wafer 2 may not be blown out by the gas, but splashed back onto the first annular boss 14 and the first surface 12 under the action of gravity and liquid tension. In this case, with the help of the first fluid channel 141, the cleaning fluid splashed back onto the first annular boss 14 and the first surface 12 can be smoothly discharged to avoid it from being retained on the first annular boss 14 and the first surface 12. At the same time, the possibility of the cleaning fluid at the edge of the wafer 2 that is not blown out by the gas flowing to the lower surface of the wafer 2 can also be reduced. It is easy to understand that in order to make it easier to discharge the cleaning fluid, the bottom of the first fluid channel 141 is lower than or flush with the first surface 12. In addition, when the bottom height of the first fluid channel 141 is lower than the first surface 12, as shown in FIG. Figure 16 As shown, the first fluid channel 141 is connected to the space above the first surface 12 via a connecting channel 142. The connecting channel 142 can be a vertical channel or a channel inclined relative to the vertical direction, and the inlet of the channel is higher than the outlet.

[0071] Furthermore, to simultaneously discharge the cleaning fluid from different circumferential locations of the first annular boss 14 and improve cleaning fluid discharge efficiency, multiple first fluid channels 141 are provided, spaced apart along the circumference of the first annular boss 14. Optionally, each first fluid channel 141 may extend radially of the first annular boss 14, for example. Furthermore, the first fluid channels 141 may be horizontal or inclined relative to the horizontal, with the inlet higher than the outlet.

[0072] In an embodiment where a first annular boss 14 and a second annular boss 17 are provided on the first surface 12, and an annular groove 18 is formed between the outer circumference of the second annular boss 17 and the inner circumference of the first annular boss 14, as shown in FIG. Figure 17 and Figure 18As shown, at least one first fluid channel 141 is provided in the first annular boss 14. The first fluid channel 141 is connected to the annular groove 18. The first fluid channel 141 can guide the cleaning fluid retained in the annular groove 18 to prevent the retained cleaning fluid from splashing back onto the wafer 2 during the next cleaning process. In order to make it easier to guide the cleaning fluid, the bottom of the first fluid channel 141 is flush with the bottom surface of the annular groove 18. Alternatively, in other examples, the bottom of the first fluid channel 141 can also be lower than the bottom surface of the annular groove 18. In this case, the first fluid channel 141 can be connected to the wafer 2 by a device similar to the embodiment of the present invention. Figure 16 The channel of the connecting channel 142 shown communicates with the annular groove 18 .

[0073] In some embodiments, as Figure 17 and Figure 18 As shown, the bottom surface of the annular groove 18 can be flush with the first surface 12. In other embodiments, such as Figure 19 and Figure 20 As shown, the bottom surface of the annular groove 18 may also be lower than the first surface 12. In this case, the portion of the annular groove 18 located below the first surface 12 functions similarly to the connecting channel 142 described above, for guiding the cleaning fluid in the annular groove 18 to the first fluid channel 141, and finally guiding the cleaning fluid from the first fluid channel 141. The flow path of the cleaning fluid is as shown in FIG. Figure 20 As shown by the dotted arrow in .

[0074] In some embodiments, the amount of liquid discharged from the first fluid channel 141 can be adjusted by adjusting the size of the fluid passage area of ​​the first fluid channel 141, that is, the larger the fluid passage area of ​​the first fluid channel 141, the smaller the gas pressure formed on the outer periphery of the second annular boss 17, the larger the amount of liquid discharged from the first fluid channel 141, and the smoother the liquid discharge, thereby achieving the goal of completely draining out the cleaning fluid retained in the annular groove 18. However, the fluid passage area of ​​the first fluid channel 141 should not be too large, because if the gas pressure formed on the outer periphery of the second annular boss 17 is too small, it will increase the possibility that the cleaning fluid on the edge of the wafer 2 will flow to the lower surface of the wafer 2. In this regard, in some embodiments, the fluid passage area of ​​the first fluid channel 141 is greater than or equal to 0.01mm 2 , and less than or equal to 1cm 2 The so-called fluid passage area refers to the effective cross-sectional area of ​​the first fluid channel 141 through which fluid can pass.

[0075] In an embodiment where a first annular boss 14 and a second annular boss 17 are provided on the first surface 12, at least one first fluid channel 141 is provided in the first annular boss 14, and an annular groove 18 is formed between the outer circumference of the second annular boss 17 and the inner circumference of the first annular boss 14, as Figure 21 As shown, at least one second fluid channel 171 is provided in the second annular boss 17, and the two ends of the second fluid channel 171 are respectively located on the inner circumference and outer circumference of the second annular boss 17; the second fluid channel 171 is connected to the annular groove 18, and the bottom surface of the annular groove 18 is flush with or lower than the bottom of the second fluid channel 171; the bottom of the first fluid channel 141 is flush with or lower than the bottom surface of the annular groove 18. By means of the second fluid channel 171, the cleaning fluid splashed back onto the first annular boss 14, the second annular boss 17, and the first surface 12 can flow to the outside of the first annular boss 14 in sequence through the second fluid channel 171 and the first fluid channel 141. This increases the flow path of the cleaning fluid splashed back onto the first annular boss 14, the second annular boss 17, and the first surface 12, and smoothly guides the cleaning fluid away from the first annular boss 14, the annular groove 18, the second annular boss 17, and the first surface 12 on its inner circumference, thereby preventing the cleaning fluid from being retained on the second annular boss 17, the annular groove 18, and the first surface 12. Furthermore, in this embodiment, each second fluid channel 171 can be coaxially arranged with each first fluid channel 141, corresponding to one another, or can be staggered.

[0076] In an embodiment where a first annular boss 14 and a second annular boss 17 are provided on the first surface 12, at least one first fluid channel 141 is provided in the first annular boss 14, and the outer circumferential surface of the second annular boss 17 is coplanar with the inner circumferential surface of the first annular boss 14, as Figure 14 As shown, at least one second fluid channel 171 is provided in the second annular boss 17, and each second fluid channel 171 is coaxially arranged with each first fluid channel 141 in a one-to-one correspondence and is interconnected. By providing at least one first fluid channel 141 and at least one second fluid channel 171, the flow path of the cleaning fluid that splashes back onto the first annular boss 14, the second annular boss 17, and the first surface 12 can be increased, and the cleaning fluid that splashes back onto the first annular boss 14, the second annular boss 17, and the first surface 12 can be smoothly discharged to prevent it from being retained on the first annular boss 14, the second annular boss 17, and the first surface 12. At the same time, the possibility of cleaning fluid that has not been blown out by the gas from the edge of the wafer 2 flowing to the lower surface of the wafer 2 can be reduced.

[0077] To sum up, the chuck structure 1 provided by the embodiment of the present invention has a first annular boss 14 arranged on the first surface 12 of the chuck base 11 opposite to the wafer 2, the upper surface of the first annular boss 14 is higher than the lower surface of the wafer 2 carried by the gas blown out from the outlet 13 of the air inlet channel, the inner diameter of the first annular boss 14 is larger than the diameter of the wafer 2, and a first guide channel 16 is formed between the inner circumferential surface of the first annular boss 14 and the edge of the wafer 2. When the gas blown out from the air outlet 13 of the air inlet channel flows through the above-mentioned first guide channel 16 along the lower surface of the wafer 2, it will change from a horizontal direction along the lower surface of the wafer 2 to an upward flow in a direction approximately perpendicular to the lower surface of the wafer 2 under the guidance of the first guide channel 16. Since the approximately vertical flow direction is more likely to block the downward flow of the cleaning fluid at the edge of the wafer 2 than the horizontal direction, the above-mentioned first guide channel 16 can enhance the effect of the gas blown out from the air outlet 13 of the air inlet channel to block the cleaning fluid from flowing to the lower surface of the wafer 2, thereby reducing the corrosion area of ​​the film layer on the lower surface of the wafer 2 and meeting the requirements of advanced processes.

[0078] As another technical solution, Figure 22 As shown, the embodiment of the present invention further provides a semiconductor cleaning device 100, including a process chamber 7, a robot and a spray device, as shown in FIG. Figure 22 As shown, a rotatable and liftable chuck structure 1 is provided in the process chamber 7 for carrying the wafer 2; the spraying device includes at least one swing arm for spraying the cleaning fluid, and the chuck structure 1 adopts the above-mentioned chuck structure 1 provided in the embodiment of the present utility model.

[0079] In the chuck structure 1, Figure 4 and Figure 5 As an example, the chuck base 11 shown in FIG. Figure 23 and Figure 24 A plurality of avoidance recesses 15 are formed at the edge of the first surface 12 of the chuck base 11. The plurality of avoidance recesses 15 are arranged in a one-to-one correspondence with the contact position of the robot 4 with the wafer 2 when taking or placing the wafer 2, so as to prevent the robot 4 from contacting the chuck base 11 when taking or placing the wafer 2. Figure 23 As an example of the manipulator 4 shown in FIG. 4 , the manipulator 4 includes two manipulator fingers 41 , one end of each of the two manipulator fingers 41 is provided with a fixed hook portion 411 and a movable hook portion 42 located at the other end of the two manipulator fingers 41 away from the fixed hook portion 411 , the movable hook 42 being able to move along the Figure 23 The E direction shown is extended or retracted toward or away from the fixed hook portion 411, as shown in FIG. Figure 24As shown, when the movable hook 42 extends toward the fixed hook 411, it will clamp the edge of the wafer 2 together with the two fixed hooks 411; when the movable hook 42 retracts toward the direction away from the fixed hook 411, it will release the clamping of the edge of the wafer 2 together with the two fixed hooks 411. The three contact positions of the movable hook 42 and the two fixed hooks 411 with the wafer 2 when clamping the wafer 2 are Figure 24 Position B1, position B2 and position B3 in the figure. In this case, there are three avoidance recesses 15, and the three avoidance recesses 15 are set in a one-to-one correspondence with positions B1, B2 and B3, so that the movable hook 42 and the two fixed hooks 411 can contact the edge of the wafer 2 in the three avoidance recesses 15 respectively. In this way, interference between the movable hook 42 and the two fixed hooks 411 and the chuck base 11 can be avoided, thereby ensuring that the robot 4 can normally perform the operation of taking and placing the wafer 2. Even if the distance between the chuck base 11 and the suspended wafer 2 is very small (generally 0.2-0.3mm), by setting the avoidance recesses 15, a certain space can be reserved for the movable hook 42 and the two fixed hooks 411 when the robot 4 takes and places the wafer 2, avoiding the three from contacting the chuck base 11, thereby reducing the difficulty of position calibration of the robot 4, improving the repeatability and reliability of the calibration position, and thus meeting mass production requirements.

[0080] In some embodiments, as Figure 22 As shown, the conductor cleaning device 100 includes a process chamber 7, a robot (eg Figure 23 The process chamber 7 is defined by a cavity 71, and a chuck structure 1 (including a chuck base 11) is disposed within the process chamber 7 for supporting the wafer 2 in a gas suspension manner. The chuck structure 1 is connected to a drive device 5, and driven by the drive device 5, the chuck structure 1 can rotate about its axis and also move up and down. The at least one swing arm in the spray device specifically includes a first swing arm 61 for spraying a chemical solution (e.g., a mixture of HF and HNO3), a second swing arm 62 for spraying deionized water, and a third swing arm 63 for spraying a drying gas (e.g., nitrogen).

[0081] The above-mentioned semiconductor cleaning equipment 100 is, for example, a single-wafer back-side cleaning equipment, which is used to perform a cleaning process on the back of the wafer 2. During the process, the front of the wafer 2 faces the first surface 12 of the chuck base 11, and a certain flow of inert gas (such as nitrogen) is sprayed through multiple gas outlets 13, which can not only suspend the wafer 2 above the chuck base 11, but also protect the front of the wafer 2 to ensure that the chemical solution will not splash back to the front of the wafer 2.

[0082] In some embodiments, as Figure 5 and Figure 22As shown, a plurality of eccentric positioning posts 3 are also provided on the chuck base 11. The plurality of eccentric positioning posts 3 can be rotatably connected to the chuck base 11 around their respective rotation axes. The central axis of each eccentric positioning post 3 is eccentrically arranged relative to its rotation axis, and the inner periphery of the plurality of eccentric positioning posts 3 constitutes a circular limiting space. In the process of synchronous eccentric rotation of the plurality of eccentric positioning posts 3 around their own rotation axes, the diameter of the limiting space changes. When the diameter of the limiting space becomes smaller, the plurality of eccentric positioning posts 3 can limit the position of the wafer 2 suspended above the first surface 12 to avoid the wafer 2 from being offset; when the diameter of the limiting space becomes larger, the restriction on the position of the wafer 2 can be released.

[0083] During the wafer placement process, multiple eccentric positioning columns 3 are in a position to release the position restriction of the wafer 2; first, an inert gas such as nitrogen is introduced into the air inlet channel; then the wafer 2 is transferred to the first surface 12 of the chuck base 11 by the robot; thereafter, the robot descends to a certain height and releases the clamping of the wafer 2; the robot moves forward to separate the wafer 2 from the robot, and at this time the wafer 2 is carried by the gas blown out of the air outlet 13 of the air inlet channel to float above the first surface 12; multiple eccentric positioning columns 3 are rotated synchronously to reduce the diameter of the limit space, thereby limiting the position of the wafer 2 suspended above the first surface 12, and finally the robot moves upward and leaves the process chamber, and controls the gas flow rate into the air inlet channel, that is, to maintain the flow rate required for the process, such as 150L / min-200L / min.

[0084] During the cleaning process, the chuck base 11 is first controlled to descend to the first process position C2 and rotate; optionally, the rotation speed of the chuck base 11 is greater than or equal to 500R / min and less than or equal to 1500R / min. Then, the nozzle 61a of the first swing arm 61 is controlled to swing above the wafer 2, while spraying the liquid medicine to the wafer 2; the maximum swing range of the nozzle 61a of the first swing arm 61 is: from one side edge of the surface of the wafer 2, through the center of the surface of the wafer 2 to the other side edge. The spraying time range is 2s-300s, and the flow rate range of the spraying liquid medicine is 500ml / min-2000ml / min. The vertical distance between the nozzle 61a of the first swing arm 61 and the wafer 2 is greater than or equal to 20mm, and less than or equal to 70mm, which is conducive to reducing the probability of liquid medicine splashing back, especially for liquid medicine with low viscosity or no viscosity.

[0085] In order to prevent the nozzle 61a of the first swing arm 61 from overshooting due to inertia, causing the liquid column to be sprayed toward the edge of the wafer 2, thereby causing the liquid to flow toward the front edge of the wafer 2 and generate particle contamination and corrosion at the edge of the wafer 2, this can be achieved by controlling the swing range of the nozzle 61a of the first swing arm 61 and / or the swing speed of the first swing arm 61. Optionally, the swing distance of the nozzle 61a of the first swing arm 61 above the surface of the wafer 2 is 80% of the maximum swing distance; the maximum swing distance is the distance from the center of the surface of the wafer 2 to the edge; optionally, the swing speed of the first swing arm 61 is greater than or equal to 10° / s and less than or equal to 50° / s.

[0086] After the spraying is completed, the first swing arm 61 is controlled to return to the initial position (the position outside the chuck base 11) and the chuck base 11 is kept rotating. The rotation speed of the chuck base 11 is greater than or equal to 1000R / min and less than or equal to 2000R / min. The chuck base 11 is in an idling state without spraying so as to be able to throw out the residual liquid on the surface of the wafer 2. In this idling state, due to the increase in the rotation speed, the change in the rotation speed can easily cause the liquid to splash back and flow back to the front edge of the wafer 2, resulting in particle contamination and corrosion at the front edge of the wafer 2. The idling time range is 0-10s.

[0087] Then, the chuck base 11 is controlled to rise to the second process position C3 while maintaining rotation. The nozzle 62a of the second swing arm 62 is controlled to swing above the wafer 2 while spraying deionized water onto the wafer 2. The spraying of deionized water removes residual chemical solution and reactants from the surface of the wafer 2. During the process of rising to the second process position C3, the rotation speed of the chuck base 11 varies within the range of 400 rpm to 1500 rpm. When the chuck base 11 rises to the second process position C3, the vertical distance between the nozzle 62a of the second swing arm 62 and the wafer 2 is greater than or equal to 20 mm and less than or equal to 70 mm. The swing distance of the nozzle 62a of the second swing arm 62 above the surface of the wafer 2 is 50% of the maximum swing distance. The swing speed of the second swing arm 62 is greater than or equal to 10° / s and less than or equal to 30° / s. The flow rate of the chemical solution is greater than or equal to 800 ml / min and less than or equal to 2000 ml / min. After the spraying is completed, the second swing arm 62 is controlled to return to the initial position (a position outside the chuck base 11 ), and the chuck base 11 is kept rotating.

[0088] The nozzle 63a of the third swing arm 63 is controlled to swing above the wafer 2 while simultaneously spraying a purge gas toward the wafer 2. The purge gas (e.g., nitrogen) can be used to dry the wafer 2. Optionally, the purge gas flow rate is greater than or equal to 5 L / min and less than or equal to 20 L / min. The rotation speed of the chuck base 11 is greater than or equal to 1000 R / min and less than or equal to 2000 R / min. The purge time is greater than or equal to 10 seconds and less than or equal to 45 seconds. After the purge is completed, the chuck base 11 is controlled to return to the wafer transfer position C1.

[0089] During wafer removal, multiple eccentric positioning pins 3 rotate synchronously to increase the diameter of the restricted space, thereby removing the restriction on wafer 2's position. The gas flow rate into the inlet channel is switched to the required flow rate for wafer removal, such as 50L / min-200L / min. The robotic arm is controlled to remove wafer 2. The robotic post-grabbing action is similar to the wafer placement action and will not be further described here.

[0090] The semiconductor cleaning equipment 100 provided by the embodiment of the present invention can reduce the corrosion area of ​​the film layer on the lower surface of the wafer 2 by adopting the above-mentioned chuck structure 1 provided by the embodiment of the present invention, thereby meeting the requirements of advanced processes.

[0091] It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present invention, and the present invention is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and substance of the present invention, and such modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A chuck structure for semiconductor cleaning equipment, comprising a chuck base for carrying a wafer, characterized in that: An air inlet channel is provided in the chuck base, the air inlet channel having a plurality of air outlets on a first surface of the chuck base opposite to the wafer, for carrying the wafer by blown gas; A first annular boss is provided on the first surface, the upper surface of the first annular boss is higher than the lower surface of the wafer carried by the gas, the inner diameter of the first annular boss is larger than the diameter of the wafer, and a first guide channel is formed between the inner circumferential surface of the first annular boss and the edge of the wafer.

2. The chuck structure according to claim 1, characterized in that: A second annular boss is further provided on the first surface, and the second annular boss is provided on the inner side of the first annular boss; A second guide channel is formed between the upper surface of the second annular boss and the lower surface of the wafer on which the gas is carried.

3. The chuck structure according to claim 2, characterized in that: An annular groove is formed between the outer circumferential surface of the second annular boss and the inner circumferential surface of the first annular boss.

4. The chuck structure according to claim 3, characterized in that: The bottom surface of the annular groove is flush with or lower than the first surface.

5. The chuck structure according to claim 3 or 4, characterized in that: At least one first fluid channel is provided in the first annular boss, and two ends of the first fluid channel are respectively located on the inner circumference and the outer circumference of the first annular boss; The first fluid passage is in communication with the annular groove.

6. The chuck structure according to claim 3 or 4, characterized in that: At least one second fluid channel is provided in the second annular boss, and two ends of the second fluid channel are respectively located on the inner circumferential surface and the outer circumferential surface of the second annular boss; The second fluid passage is in communication with the annular groove.

7. The chuck structure according to claim 2, characterized in that: The outer diameter of the second annular boss is smaller than the diameter of the wafer.

8. The chuck structure according to claim 2, characterized in that: The outer circumferential surface of the second annular boss is coplanar with the inner circumferential surface of the first annular boss.

9. The chuck structure according to claim 8, characterized in that: At least one first fluid channel is provided in the first annular boss, and two ends of the first fluid channel are respectively located on the inner circumference and the outer circumference of the first annular boss; At least one second fluid channel is provided in the second annular boss, and two ends of the second fluid channel are respectively located on the inner circumferential surface and the outer circumferential surface of the second annular boss; The second fluid channel is in one-to-one communication with the first fluid channel.

10. The chuck structure according to claim 1, characterized in that: At least one first fluid channel is provided in the first annular boss, and two ends of the first fluid channel are respectively located on the inner circumferential surface and the outer circumferential surface of the first annular boss.

11. A semiconductor cleaning device comprising a process chamber, a robot, and a spray device, wherein a rotatable and elevating chuck structure is provided in the process chamber for carrying a wafer; the spray device comprises at least one swing arm for spraying a cleaning fluid, characterized in that: The chuck structure adopts the chuck structure according to any one of claims 1 to 10.

Images