Vapor deposition equipment

Abstract

The utility model belongs to the technical field of display device manufacturing, and discloses vapor deposition equipment which comprises a deposition mechanism, a feeding pipe and a pre-ionization mechanism, the deposition mechanism comprises a deposition chamber, an upper electrode and a lower electrode, the upper electrode is used for being connected with a radio frequency power supply, and the lower electrode is used for being grounded and bearing a substrate to be plated; the feeding pipe is used for inputting reaction gas to the upper electrode; the preionization mechanism comprises a first reaction cavity and an electron generation element, the feeding pipe is communicated with the upper electrode through the first reaction cavity, and the electron generation element is arranged in the first reaction cavity. According to the vapor deposition equipment disclosed by the utility model, when the reaction gas enters the first reaction cavity of the preionization mechanism, part of the reaction gas can be combined with free electrons generated by the electron generation element to be converted into plasmas; and then the mixture of the residual unionized reaction gas and the plasma in the first reaction cavity flows into the upper electrode to be continuously ionized, so that the ionization degree of the reaction gas is effectively improved, and the utilization rate of the reaction gas is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of display device manufacturing, in particular to a vapor deposition device. Background Art

[0002] With the development of semiconductor technology, the development and use of plasma enhanced chemical vapor deposition (PECVD) devices are becoming increasingly widespread.

[0003] Currently, refer to Figure 1 As shown, a conventional chemical vapor deposition apparatus includes a deposition chamber 1′, an upper electrode 2′, a lower electrode 3′, and a feed pipe 4′. The upper electrode 2′ and the lower electrode 3′ are vertically spaced apart within the deposition chamber 1′. A glass substrate 5′ is placed on the lower electrode 3′. The upper electrode 2′ is connected to an RF power supply. The feed pipe 4′ is connected to the upper electrode 2′ and feeds the process gas to be film-formed into the upper electrode 2′. During the film deposition operation, the process gas to be film-formed enters the upper electrode 2′ and is excited into a plasma by the RF electric field. The plasma flows out of the diffusion hole 21′ in the upper electrode 2′ and sputters onto the surface of the glass substrate 5′ to form a thin film.

[0004] The existing technology has the following deficiencies: only a portion of the process gas to be film-formed is ionized into plasma in the upper electrode 2′, and after the plasma flows out from the diffusion hole 21′ of the upper electrode 2′ along with a portion of the process gas to be film-formed that is not ionized, only the plasma acts on the glass substrate 5′, and the remaining non-ionized process gas to be film-formed is discharged, burned, etc., resulting in a low utilization rate of the process gas to be film-formed. Utility Model Content

[0005] The purpose of the utility model is to provide a vapor deposition device with a simple structure, and its pre-ionization mechanism can pre-ionize part of the reaction gas before the upper electrode, thereby improving the ionization rate of the reaction gas and ensuring the utilization rate of the reaction gas.

[0006] To achieve this purpose, the present invention adopts the following technical solutions:

[0007] A vapor deposition device is provided, comprising a deposition mechanism, a feed pipe and a pre-ionization mechanism, wherein the deposition mechanism comprises a deposition chamber, an upper electrode and a lower electrode, wherein the upper electrode and the lower electrode are arranged in the deposition chamber with a vertical spacing therebetween, and the upper electrode is used to connect to a radio frequency power supply, and the lower electrode is used to be grounded and support a substrate to be plated; one end of the feed pipe is connected to an external gas source, and the other end of the feed pipe is used to input a reaction gas to the upper electrode; the pre-ionization mechanism comprises a first reaction chamber and an electron generating element, wherein the feed pipe is connected to the upper electrode through the first reaction chamber, and the electron generating element is arranged in the first reaction chamber, and the electron generating element can generate electrons in the first reaction chamber, and the electrons and part of the reaction gas in the first reaction chamber are pre-ionized into plasma.

[0008] As a preferred solution of the vapor deposition equipment, the pre-ionization mechanism further includes a mounting cylinder, the inner space of the mounting cylinder is the first reaction chamber, and the first reaction chamber extends along the vertical direction.

[0009] As a preferred solution of the vapor deposition equipment, the electron generating element includes a cathode structure, the pre-ionization structure further includes an anode structure, and the cathode structure and the anode structure are arranged in the first reaction chamber with spacing along the vertical direction.

[0010] As a preferred solution of the vapor deposition equipment, the anode structure is an anode cylinder, and the anode cylinder is arranged on the inner side wall of the mounting cylinder.

[0011] As a preferred solution of the vapor deposition equipment, the pre-ionization mechanism also includes a fixed shaft, an inductance coil and a connecting rod. The fixed shaft is inserted into the anode cylinder, and the axial direction of the fixed shaft extends along the vertical direction. The inductance coil is wound around the outer circumference of the fixed shaft, and the end of the fixed shaft is connected to the inner wall of the mounting cylinder through the connecting rod.

[0012] As a preferred solution of the vapor deposition equipment, the fixed shaft is a magnetic core.

[0013] As a preferred solution of the vapor deposition equipment, the electron generating element includes at least two cathode structures, and at least one cathode structure is respectively provided on both sides of the anode structure along the vertical direction; and / or

[0014] The cathode structure is a hollow cathode structure.

[0015] As a preferred solution of the vapor deposition equipment, the mounting tube is arranged on the deposition chamber, and a first flange is provided at the end of the mounting tube away from the deposition chamber, and the feed pipe is provided with a second flange, and the first flange and the second flange are detachably connected. The vapor deposition equipment also includes an insulating and thermal insulation pad, and the insulating and thermal insulation pad is provided between the first flange and the second flange.

[0016] As a preferred solution for the vapor deposition equipment, the upper electrode includes a RF end plate, a diffusion plate and a connector. The RF end plate is used to connect the RF power supply. The RF end plate and the diffusion plate are arranged in the deposition chamber at intervals along the vertical direction. The periphery of the diffusion plate is connected to the RF end plate through the connector to form a second reaction chamber. The first reaction chamber is connected to the second reaction chamber, and a plurality of diffusion holes are arranged at intervals on the diffusion plate.

[0017] As a preferred solution of the vapor deposition equipment, the upper electrode also includes a baffle, which is arranged between the RF end plate and the diffusion plate. The baffle is detachably connected to the RF end plate, and the projection of the baffle along the vertical direction at least covers the connecting port between the first reaction chamber and the second reaction chamber.

[0018] The beneficial effects of the present invention are as follows: by arranging a pre-ionization mechanism before the reaction gas enters the upper electrode, when the reaction gas enters the first reaction chamber of the pre-ionization mechanism, part of the reaction gas can combine with the free electrons generated by the electron generating element to transform into plasma, and then the mixture of the remaining un-ionized reaction gas and plasma in the first reaction chamber flows into the upper electrode again, and the upper electrode continues to ionize the un-ionized reaction gas in the mixture, effectively improving the ionization degree of the reaction gas, thereby improving the utilization rate of the reaction gas; and as the ionization degree of the reaction gas increases, the amount of plasma generated increases, thereby effectively ensuring the deposition rate of the vapor deposition equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The present invention will be described in further detail below with reference to the accompanying drawings and embodiments.

[0020] Figure 1 It is a structural schematic diagram of an existing vapor deposition device;

[0021] Figure 2 It is a structural schematic diagram of a vapor deposition device according to an embodiment of the present utility model;

[0022] Figure 3 This is a schematic structural diagram of the pre-ionization mechanism of an embodiment of the utility model;

[0023] Figure 4 yes Figure 2 An enlarged schematic diagram of point A.

[0024] Figure 1 middle:

[0025] 1′, deposition chamber; 2′, upper electrode; 21, diffusion hole; 3′, lower electrode; 4′, feed pipe; 5′, glass substrate.

[0026] Figures 2 to 4 middle:

[0027] 100. Substrate to be plated;

[0028] 1. Deposition mechanism; 11. Deposition chamber; 12. Upper electrode; 121. RF end plate; 122. Diffuser plate; 1221. Diffusion hole; 123. Connector; 124. Second reaction chamber; 125. Baffle; 13. Lower electrode; 2. Feed pipe; 21. Second flange; 3. Pre-ionization mechanism; 31. First reaction chamber; 32. Electron generating element; 33. Mounting tube; 331. First flange; 34. Anode structure; 35. Fixed shaft; 36. Inductor coil; 37. Connecting rod; 4. Insulation pad; 5. Connecting port. DETAILED DESCRIPTION

[0029] The advantages and features of the present invention and methods for achieving them will become apparent with reference to the embodiments described in detail below in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in a variety of different forms. These embodiments are provided merely to complete the disclosure of the present invention and enable those skilled in the art to fully understand the scope of the present invention. The present invention is limited only by the scope of the claims. The same reference numerals represent the same components throughout the specification.

[0030] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

[0031] like Figures 2 to 4 As shown, the vapor deposition equipment of an embodiment of the present invention includes a deposition mechanism 1, a feed pipe 2 and a pre-ionization mechanism 3, the deposition mechanism 1 includes a deposition chamber 11, an upper electrode 12 and a lower electrode 13, the upper electrode 12 and the lower electrode 13 are arranged in the deposition chamber 11 along the vertical direction, and the upper electrode 12 is used to connect the radio frequency power supply, and the lower electrode 13 is used to be grounded and support the substrate 100 to be plated; one end of the feed pipe 2 is connected to an external gas source, and the other end of the feed pipe 2 is used to input reaction gas to the upper electrode 12; the pre-ionization mechanism 3 includes a first reaction chamber 31 and an electron generating element 32, the feed pipe 2 is connected to the upper electrode 12 through the first reaction chamber 31, the electron generating element 32 is arranged in the first reaction chamber 31, the electron generating element 32 can sputter electrons into the first reaction chamber 31, and the free electrons and part of the reaction gas in the first reaction chamber 31 are pre-ionized into plasma.

[0032] It can be understood that by setting a pre-ionization mechanism 3 before the reaction gas enters the upper electrode 12, when the reaction gas enters the first reaction chamber 31 of the pre-ionization mechanism 3, part of the reaction gas can combine with the free electrons generated by the electron generating element 32 and be converted into plasma. With the push of the continuously input reaction gas, the remaining part of the unionized reaction gas and plasma mixture in the first reaction chamber 31 then flows into the upper electrode 12. The upper electrode 12 continues to ionize the unionized reaction gas in the mixture, effectively improving the ionization degree of the reaction gas, thereby improving the utilization rate of the reaction gas; and with the increase in the ionization degree of the reaction gas, the amount of plasma generated increases, that is, the amount of plasma sputtered from the upper electrode 12 to the substrate 100 to be plated increases, thereby effectively ensuring the deposition rate of the vapor deposition equipment.

[0033] Alternatively, as Figure 3 As shown, the pre-ionization mechanism 3 further includes a mounting tube 33. The space within the mounting tube 33 defines a first reaction chamber 31. The first reaction chamber 31 extends vertically. The mounting tube 33 has a simple structure and is easy to manufacture. Preferably, the cross-sectional area of ​​the end of the first reaction chamber 31 adjacent to the upper electrode 12 is smaller than the cross-sectional area of ​​the end of the first reaction chamber 31 distal to the upper electrode 12. The mixture of partially unionized reaction gas and plasma within the first reaction chamber 31 flows from the end distal to the upper electrode 12 toward the end adjacent to the upper electrode 12. The flow velocity of a fluid increases when a large cross-sectional area flows through a small cross-sectional area. Therefore, the flow velocity of the mixture can be effectively increased, thereby enabling the mixture to diffuse rapidly upon entering the upper electrode 12.

[0034] Specifically, if Figure 3 As shown, the electron generating element 32 includes a cathode structure, and the pre-ionization structure also includes an anode structure 34. The cathode structure and the anode structure 34 are vertically spaced apart within the first reaction chamber 31. Electrons are emitted by the cathode structure, and the electrons are attracted to the anode structure 34. This vertical spacing between the cathode structure and the anode structure 34 extends the vertical flow path of the ionization. Simultaneously, the reactant gas flows vertically within the first reaction chamber 31, effectively increasing the length of the path between the electrons and the reactant gas, thereby improving the ionization efficiency of the reactant gas. For example, the cathode structure is connected to the negative electrode of an external power supply, while the anode structure 34 is connected to the positive electrode of the external power supply, enabling the anode structure 34 to collect electrons sputtered by the cathode structure.

[0035] Furthermore, the anode structure 34 is an anode cylinder, which is disposed on the inner sidewall of the mounting cylinder 33. The annular anode cylinder allows electrons emitted by the cathode structure to flow toward the inner sidewall of the anode cylinder, not just vertically. This allows electrons to be distributed throughout the anode cylinder, effectively increasing the electron coverage space. This in turn increases the binding rate between the reactant gas and the electrons flowing within the anode cylinder, thereby improving the ionization efficiency of the reactant gas.

[0036] Furthermore, if Figure 3 As shown, the pre-ionization mechanism 3 further includes a fixed shaft 35, an inductor 36, and a connecting rod 37. The fixed shaft 35 is inserted into the anode cylinder, and the axis of the fixed shaft 35 extends in the vertical direction. The inductor 36 is wound around the outer periphery of the fixed shaft 35, and the end of the fixed shaft 35 is connected to the inner wall of the mounting cylinder 33 via the connecting rod 37. Due to the arrangement of the inductor 36, when energized, the inductor 36 forms an electromagnetic field around the fixed shaft 35 in the anode cylinder, with the direction of the magnetic flux lines perpendicular to the vertical direction. During the process of electrons being emitted from the cathode structure and moving vertically toward the anode structure 34, they are deflected by the Lorentz magnetic force of the electromagnetic field, and ultimately rotate and accelerate in the direction around the fixed shaft 35. That is, the electrons rotate at high speed around the fixed shaft 35 in the anode cylinder, thereby allowing the reactant gas flowing vertically in the anode cylinder to more fully contact and react with the electrons, thereby improving the conversion rate of the reactant gas to plasma in the first reaction chamber 31.

[0037] Preferably, the fixed shaft 35 is a magnetic core, which can be a ferrite core, a magnetic core, a copper core, etc. The use of the magnetic core can effectively improve the inductance and coil quality of the inductor coil 36.

[0038] Furthermore, the electron generating element 32 includes at least two cathode structures, and at least one cathode structure is provided on each vertical side of the anode structure 34. The two cathode structures provided in this electron generating element 32, one on each vertical side of the anode structure 34, enable the two cathode structures to generate electrons on both sides of the anode structure 34 and move vertically toward the anode structure 34. This increases the number of electrons and the area covered by the electrons, thereby increasing the likelihood of electrons combining with the reactant gas for ionization and ensuring the plasma conversion rate of the reactant gas.

[0039] In addition, the cathode structure can adopt a hollow cathode structure. During discharge, the trigger electrode in the hollow cathode will generate electrons or ions to ionize the residual gas in the hollow cathode, and then multiply the electrons through the hollow cathode effect, effectively ensuring the stability of electron emission.

[0040] In some embodiments, as Figure 2 and Figure 4As shown, the mounting cylinder 33 is provided on the deposition chamber 11, and a first flange 331 is provided at one end of the mounting cylinder 33 away from the deposition chamber 11, and the feed pipe 2 is provided with a second flange 21, and the first flange 331 and the second flange 21 are detachably connected. The vapor deposition equipment further comprises an insulating thermal insulation pad 4, which is provided between the first flange 331 and the second flange 21. By utilizing the detachable connection between the first flange 331 and the second flange 21, the connection convenience between the feed pipe 2 and the mounting cylinder 33 is improved, and the rupture of the connection between the mounting cylinder 33 and the feed pipe 2 due to thermal expansion and contraction is avoided. Insulating thermal insulation pad 4 is provided between the first flange 331 and the second flange 21 to prevent the radio frequency current and temperature of the upper electrode 12 from being transmitted to the feed pipe 2, thereby improving the safety of the feed pipe 2.

[0041] In other embodiments, Figure 2 As shown, the upper electrode 12 includes an RF end plate 121, a diffuser plate 122, and a connector 123. The RF end plate 121 is used to connect to an RF power source. The RF end plate 121 and the diffuser plate 122 are vertically spaced apart within the deposition chamber 11. The periphery of the diffuser plate 122 is connected to the RF end plate 121 via the connector 123 to form a second reaction chamber 124. The first reaction chamber 31 and the second reaction chamber 124 are in communication. The diffuser plate 122 is provided with a plurality of diffusion holes 1221 at intervals. The reaction gas enters the first reaction chamber 31 through the feed pipe 2 to generate a mixture of partially unionized reaction gas and plasma. The mixture flows into the second reaction chamber 124. Under the action of the rapidly changing electric field of the RF end plate 121, the remaining unionized reaction gas is further ionized to form plasma, thereby ensuring the concentration of plasma in the material discharged through the diffusion holes 1221 and the deposition rate of the vapor deposition equipment.

[0042] Furthermore, the upper electrode 12 also includes a baffle 125, which is spaced between the RF end plate 121 and the diffuser plate 122. The baffle 125 is detachably connected to the RF end plate 121, and the projection of the baffle 125 in the vertical direction at least covers the communication port 5 between the first reaction chamber 31 and the second reaction chamber 124. Due to the provision of the baffle 125, the mixture generated in the first reaction chamber 31 can impact the baffle 125 for dispersion, thereby preventing the mixture from concentrating in the second reaction chamber 124 near the communication port 5, that is, concentrating in the middle of the second reaction chamber 124. This avoids the occurrence of a situation where the thin film is deposited quickly in the middle of the substrate and slowly at the edge. The uniformity of the mixture in the second reaction chamber 124 is improved, ensuring that the gas in the mixture is more fully ionized in the second reaction chamber 124 and that the growth rate of the thin film grown on the surface of the substrate 100 to be plated is more uniform, thereby achieving a more uniform film thickness.

[0043] Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the above embodiments, but can be manufactured in various forms, and those skilled in the art will understand that the present invention can be implemented in other specific forms without changing the technical spirit or basic features of the present invention. Therefore, it should be understood that the above embodiments are illustrative and not restrictive in all aspects.

Claims

1. A vapor deposition device, characterized in that include: A deposition mechanism, comprising a deposition chamber, an upper electrode, and a lower electrode, wherein the upper electrode and the lower electrode are vertically spaced apart and disposed within the deposition chamber, the upper electrode being used to connect to a radio frequency power supply, and the lower electrode being used to be grounded and support the substrate to be plated; a feed pipe, one end of which is connected to an external gas source, and the other end of which is used to input reaction gas to the upper electrode; A pre-ionization mechanism includes a first reaction chamber and an electron generating element. The feed pipe is connected to the upper electrode through the first reaction chamber. The electron generating element is arranged in the first reaction chamber. The electron generating element can generate electrons into the first reaction chamber. The electrons and part of the reaction gas in the first reaction chamber are pre-ionized into plasma.

2. The vapor deposition apparatus according to claim 1, wherein: The pre-ionization mechanism further includes a mounting cylinder, the inner space of the mounting cylinder is the first reaction chamber, and the first reaction chamber extends along the vertical direction.

3. The vapor deposition apparatus according to claim 2, wherein: The electron generating element includes a cathode structure, and the pre-ionization mechanism further includes an anode structure. The cathode structure and the anode structure are arranged in the first reaction chamber with an interval along the vertical direction.

4. The vapor deposition apparatus according to claim 3, wherein: The anode structure is an anode cylinder, and the anode cylinder is arranged on the inner side wall of the installation cylinder.

5. The vapor deposition apparatus according to claim 4, characterized in that The pre-ionization mechanism also includes a fixed shaft, an inductance coil and a connecting rod. The fixed shaft is inserted into the anode cylinder, and the axial direction of the fixed shaft extends along the vertical direction. The inductance coil is wound around the outer circumference of the fixed shaft, and the end of the fixed shaft is connected to the inner wall of the mounting cylinder through the connecting rod.

6. The vapor deposition apparatus according to claim 5, characterized in that The fixed shaft is a magnetic core.

7. The vapor deposition apparatus according to claim 3, wherein: The electron generating element comprises at least two cathode structures, and at least one cathode structure is respectively provided on both sides of the anode structure along the vertical direction; and / or The cathode structure is a hollow cathode structure.

8. The vapor deposition apparatus according to claim 2, wherein: The mounting tube is arranged on the deposition chamber, and a first flange is provided at one end of the mounting tube away from the deposition chamber. The feed pipe is provided with a second flange. The first flange and the second flange are detachably connected. The vapor deposition equipment also includes an insulating and thermal insulation pad, which is arranged between the first flange and the second flange.

9. The vapor deposition apparatus according to any one of claims 1 to 8, characterized in that: The upper electrode includes an RF end plate, a diffusion plate and a connector. The RF end plate is used to connect to the RF power supply. The RF end plate and the diffusion plate are arranged in the deposition chamber at intervals along the vertical direction. The periphery of the diffusion plate is connected to the RF end plate through the connector to form a second reaction chamber. The first reaction chamber is connected to the second reaction chamber. A plurality of diffusion holes are arranged at intervals on the diffusion plate.

10. The vapor deposition apparatus according to claim 9, characterized in that The upper electrode further includes a baffle, which is spaced between the RF end plate and the diffuser plate. The baffle is detachably connected to the RF end plate, and the projection of the baffle along the vertical direction at least covers the communication port between the first reaction chamber and the second reaction chamber.

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