Polishing and cleaning equipment

Abstract

The utility model relates to the technical field of semiconductor processing, discloses polishing and cleaning equipment, and aims to solve the problem that a local dry area on the surface of a wafer can reduce the cleaning effect when the wafer is transmitted and transferred between two nodes in the cleaning process after polishing. The polishing and cleaning equipment comprises a flushing module, a spray head, a flushing module and a transferring module. The washing module is used for washing the wafer, the nozzle is at least installed at the washing module, and the washing module is used for washing the wafer. The transfer module is used for moving the wafer from the washing module to the flushing module. Wherein the nozzle is used for spraying a first cleaning solution to the wafer, so that the surface of the wafer is completely covered by a liquid film of the first cleaning solution in the process of moving the wafer from the washing module to the flushing module. The polishing and cleaning equipment provided by the utility model can improve the cleaning effect of the wafer.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing, in particular to a polishing and cleaning device. Background Art

[0002] After wafers are polished chemically and mechanically, their surfaces are often covered with particles that require immediate cleaning, as these particles are difficult to remove after drying. Current wafer polishing equipment consists of at least a polishing module and a cleaning unit. After polishing, the wafers are immediately cleaned in the cleaning unit to remove particles adhering to the wafer surface. After drying, the wafers are then processed for the next step.

[0003] Within the cleaning module, after the wafer is cleaned by the previous node, the surface of the wafer is partially wet, with a mixture of liquid droplet areas, liquid film areas, and dry areas. As the robotic arm grabs the wafer and quickly transfers it between the two nodes, any remaining droplets or liquid film on the wafer surface is thrown off, resulting in an increase in the dry area on the wafer surface. Because the dry surface of the wafer makes particles more adherent, subsequent rinse nodes are unable to effectively remove particles from the wafer surface, making it difficult to effectively clean the wafer. Utility Model Content

[0004] In view of this, the present invention provides a polishing and cleaning device to solve the problem that during the post-polishing cleaning process, the local dry area on the surface of the wafer during the transfer between two nodes will reduce the cleaning effect.

[0005] The present application provides a polishing and cleaning device, comprising a flushing module, a nozzle, a rinsing module, and a transfer module. The flushing module is used to flush wafers, the nozzle is at least mounted on the flushing module, and the rinsing module is used to rinse the wafers. The transfer module is used to move the wafers from the flushing module to the rinsing module. The nozzle is used to spray a first cleaning liquid onto the wafers, so that the surface of the wafers is completely covered by a liquid film of the first cleaning liquid during the process of moving the wafers from the flushing module to the rinsing module.

[0006] In some embodiments, the transfer module controls the wafer to move between the flushing module and the rinsing module at a speed less than or equal to 2 m / s.

[0007] In some embodiments, the transfer module controls the maximum acceleration of the wafer between the flushing module and the rinsing module to be 0.2-2 m / s. 2 between.

[0008] In some embodiments, the transfer module includes a first robot for moving the wafer between the flush module and the rinse module.

[0009] In some embodiments, the flushing module includes a roller brush unit and / or a brush unit. At least one side of the wafer is flushed and cleaned by the roller brush unit. The polished side of the wafer is flushed and cleaned by the brush unit.

[0010] In some embodiments, the flushing module includes a roller brush unit and a brush unit, and at least the brush unit is provided with a nozzle. The transfer module includes a second robot arm, and the second robot arm is used to move the wafer from the roller brush unit to the brush unit.

[0011] In some embodiments, the nozzle includes a first nozzle and a second nozzle. The brush unit is provided with the first nozzle, and the roller brush unit is provided with the second nozzle, so that the surface of the wafer is completely covered by the liquid film of the first cleaning liquid during the process of moving the wafer from the roller brush unit to the brush unit.

[0012] In some embodiments, the rinsing module is provided with a rinsing nozzle for sequentially spraying a second cleaning liquid, a third cleaning liquid, and a fourth cleaning liquid onto the wafer. The second cleaning liquid is a strong oxidizing solution, the third cleaning liquid is an acidic solution, and the fourth cleaning liquid is an alkaline solution.

[0013] In some embodiments, the polishing and cleaning equipment further includes a drying module, which is used to dry the rinsed wafers.

[0014] In some embodiments, the drying module is integrated with the rinsing module.

[0015] Beneficial Effects: The flushing module can flush and clean the surface of the wafer, reducing particulate matter adhering to the wafer surface and causing some or all of the particulate matter to be suspended in the liquid film of the first cleaning liquid formed on the wafer surface. Subsequently, when the transfer module is used to move the wafer from the flushing module to the rinse module, the wafer surface is completely covered by the liquid film formed by the first cleaning liquid sprayed from the nozzle, thereby preventing the wafer surface from drying out and causing a significant increase in the adhesion of particulate matter. This allows the subsequent rinse module to effectively remove particulate matter and other impurities in the liquid film on the wafer surface, thereby improving the wafer cleaning effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the specific implementation methods or the description of the prior art. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0017] Figure 1 This is a schematic structural diagram of a first polishing and cleaning device according to an embodiment of the present application;

[0018] Figure 2 for Figure 1 A structural diagram of the flushing module and the transfer module shown in ;

[0019] Figure 3 This is a schematic structural diagram of a second polishing and cleaning device according to an embodiment of the present application;

[0020] Figure 4 This is a flow chart of a polishing and cleaning method according to an embodiment of the present application;

[0021] Figure 5 This is a flow chart of another polishing and cleaning method according to an embodiment of the present application.

[0022] Description of reference numerals:

[0023] 100. Polishing and cleaning equipment;

[0024] 10. Flushing module; 11. Roller brush unit; 12. Brush unit;

[0025] 20. Nozzle; 21. First nozzle; 22. Second nozzle;

[0026] 30. Flushing module; 31. Flushing nozzle;

[0027] 40. Transfer module; 41. First manipulator; 42. Second manipulator;

[0028] 50. Drying module. DETAILED DESCRIPTION

[0029] To make the purpose, technical solutions, and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative efforts shall fall within the scope of protection of this application.

[0030] In the description of this application, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limitations on this application.

[0031] The terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, features specified as "first" or "second" may explicitly or implicitly include one or more of such features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0032] After wafers are polished chemically and mechanically, their surfaces are often covered with particles that require immediate cleaning, as these particles are difficult to remove after drying. Current wafer polishing equipment consists of at least a polishing module and a cleaning unit. After polishing, the wafers are immediately cleaned in the cleaning unit to remove particles adhering to the wafer surface. After drying, the wafers are then processed for the next step.

[0033] As process nodes continue to advance, the cleanliness requirements for wafers cleaned using chemical mechanical polishing (CMP) are becoming increasingly stringent. Currently, the mainstream cleaning technology is serial cleaning, where wafers sequentially enter chambers for megasonic cleaning, scrubbing, and drying. Wafer transfer between chambers is performed by a robotic arm. To meet equipment production capacity requirements, the robotic arm requires high transfer speeds.

[0034] In the cleaning module, after the wafer is cleaned by the previous node, the surface of the wafer is in a locally wet state with a mixture of droplet areas, liquid film areas, and dry areas. When the robot grabs the wafer and quickly transfers it between the two nodes, the droplets or liquid film remaining on the wafer surface will be thrown off, resulting in an increase in the dry area on the wafer surface. Since the particles on the wafer surface have strong adhesion after drying, the subsequent rinsing nodes cannot effectively remove the particles on the wafer surface, making it difficult to effectively clean the wafer. As a result, the polished wafer cannot effectively remove particles when rinsing.

[0035] In view of this, the present application provides a polishing cleaning device and a polishing cleaning method to solve the problem that the local dry area on the surface of the wafer will reduce the cleaning effect during the transfer of the wafer between two nodes during the post-polishing cleaning process.

[0036] The following combination Figures 1 to 5 , describing a polishing cleaning device and a polishing cleaning method according to an embodiment of the present application.

[0037] On the one hand, if Figure 1As shown, the present application provides a polishing and cleaning device 100, comprising a flushing module 10, a nozzle 20, a rinsing module 30, and a transfer module 40. The flushing module 10 is used to flush a wafer, such as a polished wafer, the nozzle 20 is at least mounted at the flushing module 10, the rinsing module 30 is used to rinse the wafer, and the transfer module 40 is used to move the wafer from the flushing module 10 to the rinsing module 30. Among them, the nozzle 20 is at least used to spray a first cleaning liquid (such as pure water or deionized water) onto the wafer, so that the surface of the wafer is completely covered by the liquid film of the first cleaning liquid during the process of moving the wafer from the flushing module 10 to the rinsing module 30.

[0038] In this way, the surface of the wafer can be rinsed and cleaned by the flushing module 10 to reduce the particles adhering to the wafer surface so that some or all of the particles are suspended in the liquid film of the first cleaning liquid formed on the wafer surface. Afterwards, when the wafer is moved from the flushing module 10 to the rinsing module 30 using the transfer module 40, because the surface of the wafer is completely covered by the liquid film formed by the first cleaning liquid sprayed by the nozzle 20, the surface of the wafer is prevented from being greatly increased in the adhesion of particles due to drying, so that the subsequent rinsing module 30 can effectively remove particles and other impurities in the liquid film on the wafer surface, thereby improving the cleaning effect of the wafer.

[0039] For example, during the process of cleaning and moving the wafer, if it is desired to ensure that the surface of the wafer is always completely covered by the liquid film of the first cleaning liquid, the first cleaning liquid can be sprayed onto the surface of the wafer through the nozzle 20 during and after the flushing process of the flushing module 10, so that the surface of the wafer is completely covered by the liquid film of the first cleaning liquid after the flushing is completed.

[0040] During the spraying process after flushing is completed, the speed of the nozzle 20 spraying the first cleaning liquid can be reduced so that the liquid film formed by the first cleaning liquid on the surface of the wafer can completely cover the surface of the wafer, such as so that the liquid film can completely cover the polished surface of the wafer.

[0041] During wafer movement, the transfer module 40 controls the wafer's movement speed between the flushing module 10 and the rinsing module 30 to be less than or equal to 2 m / s. This prevents the wafer's faster movement speed from causing part of the liquid film to separate from the wafer, resulting in the surface area of ​​the wafer not covered by the liquid film having a greater adhesion to particles.

[0042] It should be noted that, during the process of moving the wafer through the transfer module 40, the maximum acceleration of the wafer needs to be controlled within 0.2-2 m / s. 2 For example, the maximum acceleration of a wafer can be 0.2m / s 2 , 0.4m / s 2 , 0.6m / s 2 , 0.8m / s2 , 1.0m / s 2 , 1.2m / s 2 , 1.4m / s 2 , 1.6m / s 2 , 1.8m / s 2 or 2m / s 2 If the maximum acceleration of the wafer during movement exceeds 2m / s 2 If the maximum acceleration of the wafer is less than 0.2m / s, the integrity of the liquid film on the wafer surface will be destroyed. 2 , it will reduce the wafer moving speed, thus reducing the wafer production efficiency. That is, by controlling the maximum acceleration of the wafer movement at 0.2-2m / s 2 In between, it can not only protect the integrity of the liquid film on the wafer surface, but also make the wafer have higher production efficiency.

[0043] For the wafer, during the movement of the wafer, its polishing surface may be tilted toward the moving direction to prevent part of the liquid film on the polishing surface of the wafer from falling off during the movement.

[0044] In some embodiments, as Figure 1 As shown, the transfer module 40 includes a first robot 41 , which is used to move wafers between the flushing module 10 and the rinsing module 30 .

[0045] The first manipulator 41 can accurately grasp the wafer at the flushing module 10 and accurately place the wafer at the preset position of the rinsing module 30. During this process, the first manipulator 41 can control the movement speed, movement acceleration, and displacement angle of the wafer to ensure smooth and rapid movement of the wafer, thereby preventing the liquid film on the wafer surface from falling off or being damaged.

[0046] For example, the moving speed of the first robot 41 can be controlled, such as setting the linear speed of the first robot 41 to be less than 2 m / s, so as to avoid the liquid film on the wafer surface from falling off.

[0047] During the process of flushing the wafer by the flushing module 10, as shown in FIG. Figure 1 As shown, the flushing module 10 may include at least one of a roller brush unit 11 and a brush unit 12 .

[0048] At least one side of the wafer (such as the polished surface) is washed and cleaned by the roller brush unit 11. Since the roller of the roller brush unit 11 has a large contact area with the wafer, the arrangement of the roller brush unit 11 can increase the speed of washing particles on the wafer surface.

[0049] At the roller brush unit 11, the wafer is rotated by the first rotating assembly. The roller can also rotate in conjunction with a drive shaft parallel to the wafer surface. The two spin drive assemblies for the wafer and the roller can be installed separately or simultaneously, without limitation.

[0050] Take, for example, a case where both the rollers and the wafer are self-rotating. Rollers are provided on both the upper and lower surfaces of the wafer, and are in contact with or pressed against the surface of the wafer. The rollers on the upper and lower sides of the wafer self-rotate to simultaneously brush the polished surface and back side of the wafer. This is because the nozzle 20 sprays a first cleaning liquid onto at least the polished surface of the wafer to facilitate the rollers to brush away impurities such as particulate matter. At the same time, the wafer self-rotates under the drive of the first rotating assembly, so that the rotating rollers can completely cover and brush the polished surface and back side of the wafer, thereby simultaneously rinsing and cleaning both sides of the wafer.

[0051] In addition, the polished side of the wafer can also be cleaned by the brush unit 12. In the brush unit 12, the wafer rotates by the second rotating component, and the brush head swing arm drives the brush head to scan from the center to the edge of the wafer at a certain speed, so that the rotating brush can contact and brush the polished side of the wafer without dead angles, completing the cleaning of the entire polished surface of the wafer.

[0052] Based on this, Figure 2 As shown, the rinsing module 10 includes both a roller brush unit 11 and a brush unit 12, with at least the brush unit 12 being provided with a nozzle 20. The transfer module 40 also includes a second robot 42, which is used to move the wafer from the roller brush unit 11 to the brush unit 12. This allows the wafer to undergo initial rinsing and cleaning by the roller brush unit 11 and then be moved to the brush unit 12 for further rinsing and cleaning, thereby improving the rinsing and cleaning effect on the wafer.

[0053] Continue to refer to Figure 1 and Figure 2 The nozzle 20 includes a first nozzle 21 and a second nozzle 22 . The first nozzle 21 is provided at the brush unit 12 , and the second nozzle 22 is provided at the roller brush unit 11 .

[0054] By setting the first nozzle 21, the brush unit 12 can reduce the amount of particulate matter attached to the wafer surface through the first cleaning liquid sprayed by the first nozzle 21 during the process of brushing the wafer, and maintain complete liquid film coverage. After the brush unit 12 brushes, the first nozzle 21 can continue to spray the first cleaning liquid (such as pure water or deionized water) when necessary to ensure that the liquid film on the wafer surface is completely covered. The wafer is then moved to the rinsing module 30 by the first manipulator 41 for rinsing, and the liquid film on the wafer can be completely covered during the process.

[0055] Correspondingly, the second nozzle 22 provided at the roller brush unit 11 is used to reduce the amount of particles attached to the wafer surface and maintain complete liquid film coverage by spraying the first cleaning liquid through the second nozzle 22 during the process of the roller brush unit 11 brushing the wafer.

[0056] Furthermore, as the wafer moves from the roller brush unit 11 to the brush unit 12, the second nozzle 22 and second manipulator 42 located at the roller brush unit 11 cooperate to ensure that the wafer surface is completely covered by the first cleaning liquid film. This prevents the wafer from significantly increasing its adhesion to particles at the brush unit 12 due to partial shedding of the liquid film, thereby reducing the scrubbing effect at the brush unit 12. This helps to improve the flushing and cleaning effect at the brush unit 12.

[0057] During the flushing process of the roller brush unit 11 and the brush unit 12 , the second nozzle 22 and the first nozzle 21 spray the first cleaning liquid to flush and clean the rotating wafer, so that the particles on the wafer surface are removed by the flowing first cleaning liquid.

[0058] It should be noted that, when the flushing module 10 includes the rolling brush unit 11 and the brush unit 12 , the brush unit 12 is disposed on a side of the rolling brush unit 11 close to the flushing module 30 along the moving direction of the wafer.

[0059] In some other embodiments, such as Figure 3 As shown, the flushing module 10 may also include a roller brush unit 11 . In this case, a first robot 41 is provided between the roller brush unit 11 and the flushing module 30 for moving the wafer flushed by the roller brush unit 11 to the flushing module 30 .

[0060] Alternatively, the flushing module 10 may also include only the brush unit 12 . That is, there is no need to provide the second robot 42 and the roller brush unit 11 upstream of the brush unit 12 . The wafers flushed by the brush unit 12 are moved to the rinsing module 30 by the first robot 41 .

[0061] In some embodiments, as Figure 1 and Figure 3 As shown, the polishing and cleaning equipment 100 further includes a drying module 50 , which is used to dry the rinsed wafers.

[0062] The drying module 50 can remove moisture from the wafer surface and avoid introducing new contamination, thereby maintaining the cleanliness of the wafer surface and improving cleaning efficiency, thereby ensuring the surface quality of the wafer and the reliability of subsequent processes.

[0063] Alternatively, the rinsing module 30 and the drying module 50 may be provided as a split structure, that is, a third robot is provided between the rinsing module 30 and the drying module 50 to move the wafers rinsed by the rinsing module 30 to the drying module 50 for drying.

[0064] In some embodiments, as Figure 1 and Figure 3 As shown, a rinsing nozzle 31 is provided at the rinsing module 30 , and the rinsing nozzle 31 is used to spray the second cleaning liquid, the third cleaning liquid and the fourth cleaning liquid onto the wafer in sequence.

[0065] For example, within the rinsing module 30, the wafer can also be rotated by the third rotating assembly, so that the second cleaning liquid, the third cleaning liquid, and the fourth cleaning liquid sprayed from the rinsing nozzle 31 can flow fully on the surface of the wafer under the action of centrifugal force to rinse the surface particles and other impurities. In addition, the second cleaning liquid, the third cleaning liquid, or the fourth cleaning liquid on the surface of the wafer can also be quickly dried by the action of centrifugal force. It is only necessary to control the rotation speed of the third rotating assembly, that is, the former rotates at a slower speed and the latter rotates at a faster speed.

[0066] It should be noted that the number of the rinsing nozzles 31 can be one or more (e.g., three). If there is one rinsing nozzle 31, the rinsing nozzle 31 sprays the second cleaning liquid, the third cleaning liquid, and the fourth cleaning liquid in sequence. If there are three rinsing nozzles 31, each rinsing nozzle 31 sprays one cleaning liquid (i.e., they are arranged in a one-to-one correspondence), and the multiple rinsing nozzles 31 spray the second cleaning liquid, the third cleaning liquid, and the fourth cleaning liquid in sequence.

[0067] The first cleaning solution is a highly oxidizing solution, such as ozone water, but other highly oxidizing solutions are also possible. The strong oxidizing properties of ozone are used to remove organic and metallic contaminants from the wafer surface. This process is environmentally friendly, highly efficient, and economical, helping to increase semiconductor production and yield while reducing environmental impact.

[0068] The second cleaning solution is an acidic solution, such as hydrofluoric acid. Alternatively, it can be a mixture of hydrochloric acid and hydrogen peroxide, or a mixture of sulfuric acid and hydrogen peroxide. Flushing with the acidic second cleaning solution effectively removes impurities such as metal ions, organic matter, and the native oxide layer from the wafer surface, thereby ensuring the performance and reliability of semiconductor devices.

[0069] The third cleaning solution is an alkaline solution, such as SC1 (StandardClean 1) alkaline mixed solution composed of ammonium hydroxide, hydrogen peroxide, and deionized water, or APM (Ammonia Peroxide Mixture). Flushing with this alkaline third cleaning solution effectively removes contaminants such as particles, metal ions, and organic matter from the wafer surface, ensuring the performance and reliability of semiconductor devices.

[0070] During the process of rinsing the wafers with the second, third, and fourth cleaning liquids, the recovery bin within the rinsing module 30 rises accordingly, surrounding the wafers and the area below them. The third rotating assembly drives the wafers to rotate while the upper rinsing nozzle 31 sprays the corresponding second, third, or fourth cleaning liquid. One of the cleaning liquids adheres to the wafer surface and is rapidly ejected by centrifugal force, where it is collected and sorted by the recovery bin for recycling.

[0071] In some embodiments, as Figure 1 and Figure 3 As shown, the drying module 50 is integrated with the rinsing module 30 .

[0072] By integrating the drying module 50 with the rinsing module 30 , it is possible to avoid the wafers that have been rinsed from being re-contaminated during the process of moving and drying, which is beneficial to improving the cleanliness of the wafers.

[0073] Alternatively, the drying module 50 and the rinsing module 30 may be configured as a split structure, and it is only necessary to provide a closed transmission channel and a robot in the rinsing module 30 and the drying module 50 , and this is not limited to this.

[0074] Exemplarily, the drying module 50 includes a drying nozzle. The drying nozzle is used to spray a replacement fluid, such as an isopropyl alcohol solution, onto the wafer. The drying module 50 then continuously blows nitrogen gas to dry the replacement fluid, such as the isopropyl alcohol, from the wafer surface, thereby maintaining the wafer in a dry state.

[0075] Isopropyl alcohol is a polar solvent that effectively dissolves moisture on the wafer surface, reducing surface tension, minimizing water marks and particles, and improving drying efficiency while being environmentally friendly. Using nitrogen to air-dry the isopropyl alcohol solution over the wafer surface prevents water stains during the drying process, further improving wafer surface cleanliness.

[0076] On the other hand, the present application also provides a polishing and cleaning method, such as Figure 4 As shown, the polishing cleaning method includes:

[0077] Step S110: placing the wafer in a flushing module for flushing and cleaning, and ensuring that the surface of the wafer is completely covered by a liquid film of the first cleaning liquid.

[0078] Step S210: using a transfer module to move the wafer to a rinsing module for rinsing, and ensuring that the wafer is completely covered by the liquid film during the process of moving to the rinsing module.

[0079] Since the above-mentioned polishing and cleaning method is applicable to the polishing and cleaning equipment in the previous aspect, that is, the polishing and cleaning method is a method-side solution corresponding to the polishing and cleaning equipment in the previous aspect, the polishing and cleaning method has all the beneficial effects of the above-mentioned polishing and cleaning equipment, which will not be repeated here.

[0080] In some other embodiments, such as Figure 5 As shown, the polishing cleaning method specifically includes:

[0081] Step S111: placing the polished wafer into the roller brush unit for flushing, and controlling the second nozzle to spray the first cleaning liquid onto the wafer after flushing, so that the surface of the wafer is completely covered by the liquid film.

[0082] Step S112: controlling the second robot to move the wafer from the roller brush unit to the brush unit, and ensuring that the wafer is completely covered by the liquid film during the movement.

[0083] Step S113: controlling the wafer to be flushed in the brush unit, and controlling the first nozzle to spray the first cleaning liquid onto the wafer after flushing, so that the wafer is kept completely covered by the liquid film.

[0084] Step S211: controlling the first robot to move the wafer from the brush unit to the rinsing module, and ensuring that the wafer is completely covered by the liquid film during the movement.

[0085] Step S310: controlling the rinsing module to rinse the wafer multiple times, and drying the wafer in the composite integrated drying module.

[0086] In step S112 and step S210, at least the wafer needs to be completely covered by the polishing liquid film during step S210. During the wafer movement in step S112, maintaining complete coverage of the liquid film is beneficial to improving the flushing and cleaning effect of the brush unit.

[0087] Furthermore, in steps S112 and S210, the wafer can be controlled to maintain complete coverage of the liquid film by controlling the movement speed and acceleration of the robot, as well as the position angle of the wafer during movement. Furthermore, while the robot is moving the wafer, the first cleaning liquid can be continuously sprayed on the wafer by using a large-angle spraying method of the nozzle 20 or by using multiple nozzles 20, thereby also maintaining complete coverage of the liquid film on the wafer surface.

[0088] Although the embodiments of the present application have been described with reference to the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the present application, and such modifications and variations shall fall within the scope defined by the appended claims.

Claims

1. A polishing and cleaning device, characterized in that: include: A flushing module, used for flushing wafers; a nozzle, installed at least at the flushing module; a rinsing module, used for rinsing the wafer; and a transfer module, the transfer module being used to move the wafer from the flushing module to the rinsing module; The nozzle is used to spray the first cleaning liquid onto the wafer, so that the surface of the wafer is completely covered by the liquid film of the first cleaning liquid during the process of the wafer moving from the flushing module to the rinsing module.

2. The polishing and cleaning equipment according to claim 1, characterized in that: The transfer module controls the wafer to move between the flushing module and the rinsing module at a speed less than or equal to 2 m / s.

3. The polishing and cleaning equipment according to claim 1, characterized in that: The transfer module controls the maximum movement acceleration of the wafer between the flushing module and the rinsing module to be 0.2-2 m / s 2 between.

4. The polishing and cleaning equipment according to claim 1, characterized in that: The transfer module includes: A first robot is used to move the wafer between the flushing module and the rinsing module.

5. The polishing and cleaning equipment according to claim 4, characterized in that: The flushing module includes: a rolling brush unit, through which at least one side of the wafer is flushed and cleaned; and / or a brush unit, the polishing side of the wafer is flushed and cleaned by the brush unit.

6. The polishing and cleaning equipment according to claim 4, characterized in that: The flushing module includes a roller brush unit and a brush unit, and at least the brush unit is provided with the nozzle; The transfer module includes: A second robot is used to move the wafer from the roller brush unit to the brush unit.

7. The polishing and cleaning equipment according to claim 6, characterized in that: The nozzle comprises: A first nozzle, the brush unit is provided with the first nozzle; and a second nozzle, the roller brush unit is provided with the second nozzle, so that when the wafer is moved from the roller brush unit to the brush unit, the surface of the wafer is completely covered by the liquid film of the first cleaning liquid.

8. The polishing and cleaning equipment according to claim 5, characterized in that: The rinsing module is provided with a rinsing nozzle, which is used to spray the second cleaning liquid, the third cleaning liquid and the fourth cleaning liquid onto the wafer in sequence; The second cleaning liquid is a strong oxidizing solution, the third cleaning liquid is an acidic solution, and the fourth cleaning liquid is an alkaline solution.

9. The polishing and cleaning equipment according to any one of claims 1 to 8, characterized in that: The polishing and cleaning equipment further comprises a drying module, which is used to dry the rinsed wafers.

10. The polishing and cleaning equipment according to claim 9, characterized in that: The drying module and the rinsing module are integrated.

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