Semiconductor vacuum transmission system

Abstract

The utility model discloses a semiconductor vacuum transmission system, which comprises a loading lock module, the loading lock module comprises a loading lock chamber and a wafer placement table arranged in the loading lock chamber, at least one laser sensor is arranged in the loading lock chamber, the laser sensor is used for emitting detection laser, and the detection laser is used for detecting the wafer placement table. The size of a linear spot formed by the detection laser on the plane where the wafer is located is larger than or equal to the diameter of the wafer. In the semiconductor vacuum transmission system, the laser sensor can perform integrity detection on the wafer before and after processing, the detection is convenient and fast, and the transmission efficiency of the semiconductor machine table is not influenced, so that the WPH is ensured to meet the requirement.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor vacuum transmission system. Background Art

[0002] In the semiconductor manufacturing process, in order to detect the integrity of the wafer, each wafer must pass through an alignment device (Aligner) before entering the reaction chamber of the semiconductor machine to ensure that the pattern on the wafer is accurately aligned with the design pattern. However, after the wafer is processed in the reaction chamber, the edge of the wafer may also be damaged. Existing semiconductor machines usually only detect the wafers before entering the reaction chamber. If an alignment step is added to the wafer return process to detect the integrity of the wafer after processing, the transmission efficiency will be reduced, which will affect the number of wafers processed per hour (WPH) of the machine. Utility Model Content

[0003] The present application discloses a semiconductor vacuum transfer system for detecting the integrity of wafers without affecting WPH.

[0004] To achieve the above objectives, this application provides the following technical solutions:

[0005] In the first aspect, the present application provides a semiconductor vacuum transfer system, including a loading lock module, the loading lock module including a loading lock chamber and a wafer placement table arranged in the loading lock chamber, at least one laser sensor is provided in the loading lock chamber, the laser sensor is used to emit a detection laser, and the size of the linear spot formed by the detection laser on the plane where the wafer is located is greater than or equal to the diameter of the wafer.

[0006] In the semiconductor vacuum transfer system of this application, the size of the linear spot formed by the detection laser on the plane of the wafer is greater than or equal to the diameter of the wafer, thereby ensuring that the linear spot covers the entire diameter of the wafer, thereby enabling the detection laser to detect the integrity of the entire area of ​​the wafer surface. In addition, the laser sensor is located in the load lock chamber. The wafer passes through the load lock chamber before entering the reaction chamber and when returning from the reaction chamber. Therefore, the laser sensor can perform integrity inspection on the wafer before and after processing. It is convenient and fast, and will not affect the transmission efficiency of the semiconductor machine, thus ensuring that the WPH meets the requirements.

[0007] In some embodiments, the number of the laser sensor is one, the wafer placement table includes a carrying surface for carrying the wafer, and the orthographic projection of the detection laser on the carrying surface passes through the center of the carrying surface.

[0008] In some embodiments, the wafer placement platform includes a carrying groove, and the bottom surface of the carrying groove is a carrying surface.

[0009] In some embodiments, a plurality of support columns are provided at intervals along the circumference of the supporting groove, with the end of the support column away from the side wall facing the center of the supporting groove. The support columns are used to support the wafer, and the detection laser's orthographic projection on the bottom surface of the supporting groove and the support column's orthographic projection on the bottom surface of the supporting groove do not overlap.

[0010] In some embodiments, the load lock chamber includes an atmospheric side door and a vacuum side door, and the laser sensor includes a first sensor and a second sensor, the first sensor is arranged between the wafer placement table and the vacuum side door, and the second sensor is arranged between the wafer placement table and the atmospheric side door.

[0011] In some embodiments, the load lock chamber includes a top wall and a bottom wall arranged opposite to each other, and the laser sensor includes an emitting end for emitting a detection laser, and the emitting end is located on a side of the wafer facing the bottom wall or the top wall.

[0012] In some embodiments, the laser sensor further includes a receiving end, the receiving end being used to receive the laser signal that is not blocked by the wafer; and / or, the emission direction of the detection laser is perpendicular to the surface of the wafer.

[0013] In some embodiments, the transmitting end is located on a side of the wafer facing the bottom wall, and the receiving end is located on a side of the wafer facing the top wall.

[0014] In some embodiments, the semiconductor vacuum transmission system further includes a collection module, the receiving end is signal-connected to the collection module, and transmits the laser signal to the collection module.

[0015] In some embodiments, the semiconductor vacuum transmission system further includes a processor, and the acquisition module is signal-connected to the processor. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A schematic structural diagram of a load lock module in a semiconductor vacuum transfer system provided in an embodiment of the present application;

[0017] Figure 2 A schematic structural diagram of a load lock module in a semiconductor vacuum transfer system provided in an embodiment of the present application;

[0018] Figure 3 A schematic structural diagram of a semiconductor vacuum transmission system provided in an embodiment of the present application;

[0019] Figure 4 A schematic structural diagram of a semiconductor vacuum transmission system provided in an embodiment of the present application;

[0020] Figure 5 The transmission distance L of a wafer provided in the embodiment of the present application is CD Chord length LAB The relationship curve diagram;

[0021] Figure 6 The transmission distance L of a wafer provided in the embodiment of the present application is CD Chord length L AB relationship curve diagram.

[0022] Icons: 100 - load lock chamber; 101 - top wall; 102 - bottom wall; 110 - wafer placement platform; 111 - support column; 120 - atmospheric side door; 130 - vacuum side door; 200 - laser sensor; 210 - transmitter; 220 - receiver; 201 - first sensor; 202 - second sensor; 300 - wafer; 400 - acquisition module; 500 - processor;

[0023] 01- bearing slot; 02- center of bearing slot. DETAILED DESCRIPTION

[0024] The following will clearly and completely describe the technical solutions in the embodiments of the present application in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application. Among them, in the description of the embodiments of the present application, unless otherwise specified, " / " means or, for example, A / B can mean A or B; "and / or" in the text is only a description of the association relationship of associated objects, indicating that there can be three relationships, for example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. In addition, in the description of the embodiments of the present application, "multiple" refers to two or more than two.

[0025] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to imply or suggest relative importance or implicitly indicate the number of the technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of this application, unless otherwise specified, "plurality" means two or more.

[0026] The embodiments of the present application provide a semiconductor vacuum transfer system to detect the integrity of wafers without affecting the WPH.

[0027] Figure 1 This is a schematic structural diagram of a load lock module in a semiconductor vacuum transfer system provided in an embodiment of the present application. Figure 2 A schematic diagram of the structure of a load lock module in a semiconductor vacuum transfer system provided in an embodiment of the present application, referring to Figure 1and Figure 2 The semiconductor vacuum transfer system includes a load lock module, which includes a load lock chamber 100 and a wafer placement table 110 provided in the load lock chamber 100. At least one laser sensor 200 is provided in the load lock chamber 100. The laser sensor 200 is used to emit a detection laser. The size of the linear spot formed by the detection laser on the plane where the wafer is located is greater than or equal to the diameter of the wafer, thereby ensuring that the linear spot covers the entire diameter of the wafer 300, thereby enabling the detection laser to detect the integrity of the entire area of ​​the wafer surface.

[0028] The laser sensor 200 in this application is a linear laser sensor 200 .

[0029] It will be understood that wafer placement platform 110 is used to support wafers, and the specific structure of wafer placement platform 110 is not limited in this application. Wafer placement platform 110 includes a support surface for supporting wafers. Wafer placement platform 110 can be a groove, in which case the support surface is the bottom surface of the groove. Alternatively, if wafer placement platform 110 is a raised platform, the support surface is the surface of the raised platform.

[0030] The number of laser sensors 200 is related to the locations where the laser sensors 200 are set, which will be described in detail below with reference to the accompanying drawings.

[0031] In a possible implementation, when there is only one laser sensor 200 , the orthographic projection of the detection laser emitted by the laser sensor 200 on the bearing surface passes through the center of the bearing surface, and it is ensured that other components cannot block the detection laser.

[0032] like Figure 1 As shown, the wafer placement platform 110 includes a loading slot 01, and the loading surface is the bottom surface of the loading slot 01. Along the circumference of the loading slot 01, a plurality of support columns 111 are spaced apart on the sidewalls of the loading slot 01. The ends of the support columns 111 away from the sidewalls face the center 02 of the loading slot. The support columns 111 are used to support the wafer. When there is only one laser sensor 200, the orthographic projection of the detection laser emitted by the laser sensor 200 on the bottom surface of the loading slot 01 passes through the center 02 of the loading slot, so that the detection laser can scan the entire outline of the wafer 0.

[0033] Of course, in order to increase the accuracy of detection or the diversity of collected data, the number of laser sensors 200 can also be two or more, and the direct projection of the detection laser emitted by the above-mentioned laser sensor 200 on the bottom surface of the supporting groove 01 passes through the center 02 of the supporting groove.

[0034] Among them, the orthographic projection of the detection laser on the bottom surface of the supporting groove 01 and the orthographic projection of the support column 111 on the bottom surface of the supporting groove 01 do not overlap, thereby avoiding the support column 111 blocking the detection laser and causing the detection laser to be unable to completely scan the outer edge contour of the wafer.

[0035] In another possible implementation, Figure 2 As shown, the load lock chamber 100 includes an atmospheric side door 120 and a vacuum side door 130. The atmospheric side door 120 is used to isolate the load lock chamber 100 from the atmospheric environment, and the vacuum side door 130 is used to isolate the load lock chamber 100 from the vacuum chamber. The laser sensor 200 includes a first sensor 201 and a second sensor 202. The first sensor 201 is disposed between the wafer placement table 110 and the vacuum side door 130. The first sensor 201 is used to detect the outline of the wafer when the robot arm transfers the wafer from the vacuum chamber to the load lock chamber 100, or when the robot arm transfers the wafer from the load lock chamber 100 to the vacuum chamber. The second sensor 202 is disposed between the wafer placement table 110 and the atmospheric side door 120. The second sensor 202 is used to detect the outline of the wafer when the robot arm transfers the wafer from the atmospheric environment to the load lock chamber 100, or when the robot arm transfers the wafer from the load lock chamber 100 to the atmospheric environment.

[0036] It should be noted that when the robotic arm transfers the wafer between the atmospheric environment and the load lock chamber 100, and between the vacuum chamber and the load lock chamber 100, the robotic arm blocks the light source of the laser sensor 200, resulting in an inability to fully detect the wafer's outline. The semiconductor vacuum transfer system in this application integrates the detection data from the two laser sensors 200 by providing a first sensor 201 and a second sensor 202, thereby obtaining detection data of the wafer's complete outline.

[0037] Figure 3 This is a schematic diagram of the structure of a semiconductor vacuum transmission system provided in an embodiment of the present application. Figure 4 A schematic diagram of a semiconductor vacuum transmission system provided in an embodiment of the present application, referring to Figure 3 and Figure 4 The load lock chamber 100 includes a top wall 101 and a bottom wall 102 disposed opposite each other. The laser sensor 200 includes an emitting end 210 for emitting a detection laser. The emitting end 210 is located on the side of the wafer 300 facing the bottom wall 102 or the side facing the top wall 101. The emitting end 210 can be directly fixed to the top wall 101 or the bottom wall 102, or can be disposed on other structural components within the load lock chamber 100.

[0038] In one possible implementation, the emission direction of the detection laser is perpendicular to the surface of the wafer 300 , which makes it easier to calculate the scanning cross section of the detection laser. In addition, the installation and adjustment of the receiving end are more convenient, and laser coupling is easier.

[0039] Continue to refer to Figure 3 and Figure 4 The laser sensor 200 further includes a receiving end 220 for receiving laser signals not blocked by the wafer 300. The receiving end 220 is positioned opposite the transmitting end 210 along the height of the load lock chamber 100. For example, when the transmitting end 210 is fixed to the top wall 101, the receiving end 220 is fixed to the bottom wall 102. Alternatively, when the transmitting end 210 is fixed to the bottom wall 102, the receiving end 220 is fixed to the top wall 101.

[0040] When the orthographic projection of the detection laser on the bottom surface of the support tank 01 passes through the center 02 of the support tank, the transmitting end 210 can be disposed on the bottom surface of the support tank 01, and the receiving end 220 can be disposed on the side of the wafer 300 facing away from the support tank 01, such as the top wall 101. Alternatively, the transmitting end 210 can be fixedly mounted on the side of the wafer 300 facing away from the support tank 01, such as the top wall 101, and correspondingly, the receiving end 220 can be disposed on the bottom surface of the support tank 01.

[0041] like Figure 3 As shown, the working principle of the laser sensor 200 in this application is described by taking the example of the transmitting end 210 being arranged on the top wall 101 of the load lock chamber 100 and the receiving end 220 being arranged on the bottom wall 102 of the load lock chamber 100. The radius of the wafer 300 is r. When the wafer 300 moves from the starting point D to the point C, the line spot of the detection laser emitted by the laser sensor 200 on the wafer 300 coincides with the chord AB of the wafer 300. The movement distance of the wafer 300 is L. CD , the length of the chord AB of the wafer 300 is L AB , then the chord length L of the wafer 300 AB and L CD Satisfies the following relationship:

[0042]

[0043] Therefore, the wafer 300 can be transported over a distance L CD The chord length L of the wafer 300 is obtained by combining the radius r of the wafer 300 and the AB At the same time, because the wafer 300 can block the detection laser, the length of the laser signal received by the receiving end 220 of the laser sensor 200 is the actual size of the chord AB of the wafer 300. AB By performing a comparison, it can be determined whether the wafer 300 is missing or damaged.

[0044] Figure 5 The transmission distance L of a wafer provided in the embodiment of the present application is CD Chord length L AB The relationship curve diagram, refer to Figure 5 During the installation phase, the first sensor 201 records the transport distance L of the wafer 300. CD Chord length L AB relationship curve diagram. Figure 6 The transmission distance L of a wafer provided in the embodiment of the present application is CD Chord length L AB The relationship curve diagram, refer to Figure 6 During the installation phase, the second sensor 202 records the transport distance L of the wafer 300. CD Chord length L AB relationship curve diagram.

[0045] Among them, during normal delivery, the wafer 300 will block the light source of the laser sensor 200 during the transmission process of the load lock chamber 100. By recording the actual size curve of the chord AB of the wafer 300 and comparing it with the transmission distance L of the wafer 300 stored during the installation stage, the laser sensor 200 can be used to calculate the actual size of the chord AB of the wafer 300. CD Chord length L AB , so as to judge the overall integrity of the wafer 300.

[0046] In a preferred implementation, the transmitting end 210 is located on the side of the wafer 300 facing the top wall 101, and the receiving end 220 is located on the side of the wafer 300 facing the bottom wall 102, thereby avoiding interference of other light sources on the laser sensor 200. Figure 4 As shown, the transmitting end 210 is disposed on the bottom wall 102 of the load lock chamber 100 , and the receiving end 220 is located on the top wall 101 of the load lock chamber 100 , which can prevent other light sources on the top from interfering with the detection laser.

[0047] You can continue to refer to Figure 3 and Figure 4 The semiconductor vacuum transmission system further includes a collection module 400. The receiving end 220 is signal-connected to the collection module 400 and transmits the laser signal to the collection module 400. The collection module 400 can process the laser signal to convert it into target data.

[0048] In one possible implementation, the semiconductor vacuum transfer system further includes a processor 500, and the acquisition module 400 is signal-connected to the processor 500. The acquisition module 400 transmits the target data to the processor 500, which can further process and display the data to facilitate an operator's intuitive assessment of the integrity of the wafer 300's profile. The processor 500 can be a computer equipped with a user interface (UI), such as a display screen, to facilitate an operator's access to data or control of the wafer 300's processing technology.

[0049] Obviously, those skilled in the art may make various changes and modifications to the embodiments of the present application without departing from the spirit and scope of the present application. Thus, if such modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is intended to include such modifications and variations.

Claims

1. A semiconductor vacuum transmission system, characterized in that: It includes a loading lock module, which includes a loading lock chamber and a wafer placement table arranged in the loading lock chamber. At least one laser sensor is provided in the loading lock chamber, and the laser sensor is used to emit a detection laser. The size of the linear spot formed by the detection laser on the plane where the wafer is located is greater than or equal to the diameter of the wafer.

2. The semiconductor vacuum transfer system according to claim 1, wherein: The number of the laser sensor is one, the wafer placement platform includes a carrying surface for carrying the wafer, and the orthographic projection of the detection laser on the carrying surface passes through the center of the carrying surface.

3. The semiconductor vacuum transfer system according to claim 2, characterized in that: The wafer placement platform includes a carrying groove, and the bottom surface of the carrying groove is the carrying surface.

4. The semiconductor vacuum transport system according to claim 3, characterized in that: Along the circumference of the supporting groove, a plurality of support columns are provided at intervals on the side walls of the supporting groove, with one end of the support column away from the side wall facing the center of the supporting groove. The support columns are used to support the wafer, and the orthographic projection of the detection laser on the bottom surface of the supporting groove and the orthographic projection of the support column on the bottom surface of the supporting groove do not overlap.

5. The semiconductor vacuum transfer system according to claim 1, wherein: The load lock chamber includes an atmospheric side door and a vacuum side door, and the laser sensor includes a first sensor and a second sensor, wherein the first sensor is arranged between the wafer placement table and the vacuum side door, and the second sensor is arranged between the wafer placement table and the atmospheric side door.

6. The semiconductor vacuum transport system according to any one of claims 1 to 5, characterized in that: The laser sensor includes an emitting end, which is used to emit the detection laser. The load lock chamber includes a top wall and a bottom wall arranged opposite to each other. The emitting end is located on the side of the wafer facing the bottom wall or the side facing the top wall.

7. The semiconductor vacuum transport system according to claim 6, characterized in that: The laser sensor includes a receiving end, and the receiving end is used to receive the laser signal that is not blocked by the wafer; and / or, The emission direction of the detection laser is perpendicular to the surface of the wafer.

8. The semiconductor vacuum transport system according to claim 7, characterized in that: The transmitting end is located on a side of the wafer facing the bottom wall, and the receiving end is located on a side of the wafer facing the top wall.

9. The semiconductor vacuum transport system according to claim 7, wherein: The semiconductor vacuum transmission system further includes a collection module. The receiving end is signal-connected to the collection module and transmits the laser signal to the collection module.

10. The semiconductor vacuum transport system according to claim 9, characterized in that: The semiconductor vacuum transmission system further includes a processor, and the acquisition module is signal-connected to the processor.

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