Rotating shaft device of wafer stage of ion beam etching machine

Abstract

The utility model provides a rotating shaft device of a wafer carrying table of an ion beam etching machine, which comprises a carrying table plate, a rotating arm is fixedly arranged on the carrying table plate, the rotating arm is used for being connected with an external rotation driving structure, an output end of a first servo motor is connected with a speed reducer, magnetic fluid is fixed on a connecting sleeve, and the magnetic fluid is connected with a second servo motor. One end of a shaft sleeved with the magnetic fluid penetrates through one side wall of an etching chamber of the ion beam etching machine to be connected with the carrying table plate, the end, away from the etching chamber of the ion beam etching machine, of the connecting sleeve is fixedly connected with a mounting frame in a sleeved mode, and the other end of the shaft sleeved with the magnetic fluid is sequentially connected with the speed reducer and the mounting frame in a sleeved mode. A stop block set is arranged at the end of the shaft sleeved with the magnetic fluid and far away from the etching chamber of the ion beam etching machine, a plurality of buffer devices are arranged on the same side of the mounting frame and stop blocks, and the rotation angle of the shaft sleeved with the magnetic fluid is limited through cooperation of the buffer devices and the stop blocks. Therefore, the rotation angle of the carrying table plate is limited in an auxiliary mode.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing equipment, and more specifically to a rotating axis device of a wafer carrier of an ion beam etching machine. Background Art

[0002] In the field of semiconductor processing or micro-electromechanical systems, the use of ion beam etching for patterning is a very common anisotropic etching method. Due to the high compatibility of IBE with etching materials, it can etch metals, ceramics, various compounds and other materials that are difficult to handle with micro-processing processes. It plays an important complementary role in addition to wet etching and chemical reactive ion etching.

[0003] The existing patent publication number: CN118588529A, discloses an IBE ion beam etching device, including: a vacuum chamber, a vacuum pump assembly is installed above the vacuum chamber, an ion beam generating device is installed on the rear wall of the vacuum chamber, a rotary drive structure is installed on the left side of the vacuum chamber, an etching carrier is rotatably arranged inside the vacuum chamber, the rotary drive structure drives and connects the etching carrier, a wafer feed port is opened on the right wall of the vacuum chamber, the etching carrier includes a carrier plate, the carrier plate and the space inside the sealed box are fixedly provided with a rotary drive assembly, a wafer lifting and clamping assembly, a baffle drive cylinder and an induction device, the above components are fixedly connected to the carrier plate, and the connection is sealed. The present invention enables the wafer to be in an angle-adjustable state during the etching process, and can complete more precise and complex etching, greatly improving the etching stability and yield rate, with a high degree of automation and improved etching efficiency.

[0004] However, how to make the rotation angle range of the etching stage more accurate during the wafer etching process is a problem that needs to be solved. Utility Model Content

[0005] In view of this, in order to solve the above problems, the present invention proposes a rotating axis device for a wafer carrier of an ion beam etching machine, comprising a carrier plate 1, a rotating arm 11 fixedly mounted on the carrier plate 1, the rotating arm 11 is used to connect with an external rotary drive structure 20, and rotates through the external rotary drive structure 20, so that the etching of the wafer is more uniform, the rotary drive structure 20 includes a first servo motor 21, the output end of the first servo motor 21 is connected to a reducer 22, a magnetic fluid 23 is fixed on a connecting sleeve 90, and the connecting sleeve 90 is fixedly connected to a side wall of the etching chamber of the ion beam etching machine, one end of the shaft 24 sleeved in the magnetic fluid 23 passes through a side wall of the etching chamber of the ion beam etching machine and is connected to the carrier plate 1, and is rotated by the first servo motor 2 1 and the reducer 22 rotate the shaft 24 of the magnetic fluid 23, thereby driving the carrier plate 1 to rotate, and is characterized in that: the end of the connecting sleeve 90 away from the etching chamber of the ion beam etcher is fixedly sleeved with a mounting bracket 30, and the other end of the shaft 24 sleeved in the magnetic fluid 23 is sleeved with the reducer 22 and the mounting bracket 30 in sequence, and a group of blocking blocks are provided at the end of the shaft 24 sleeved in the magnetic fluid 23 away from the etching chamber of the ion beam etcher, and the blocking block group is composed of two blocking blocks arranged at intervals, and a plurality of buffer devices 50 are provided on the same side of the mounting bracket 30 and the blocking block 40, and the buffer device 50 cooperates with the blocking block 40 to limit the rotation angle of the shaft 24 sleeved in the magnetic fluid 23, so as to assist in limiting the rotation angle of the carrier plate 1.

[0006] A rotating axis device for a wafer carrier of an ion beam etching machine comprises a carrier plate 1, a rotating arm 11 is fixedly installed on the carrier plate 1, the rotating arm 11 is used to connect with an external rotary drive structure 20, and is rotated by the external rotary drive structure 20, so that the etching of the wafer is more uniform, the rotary drive structure 20 comprises a first servo motor 21, the output end of the first servo motor 21 is connected to a reducer 22, a magnetic fluid 23 is fixed on a connecting sleeve 90, the connecting sleeve 90 is fixedly connected to a side wall of the etching chamber of the ion beam etching machine, one end of a shaft 24 sleeved in the magnetic fluid 23 passes through a side wall of the etching chamber of the ion beam etching machine and is connected to the carrier plate 1, and the magnetic fluid is rotated by the first servo motor 21 and the reducer 22. The shaft 24 of the body 23 drives the carrier plate 1 to rotate, and is characterized in that: the end of the connecting sleeve 90 away from the etching chamber of the ion beam etcher is fixedly sleeved with a mounting bracket 30, and the other end of the shaft 24 sleeved in the magnetic fluid 23 is sleeved with the reducer 22 and the mounting bracket 30 in sequence, and a group of blocking blocks are provided at the end of the shaft 24 sleeved in the magnetic fluid 23 away from the etching chamber of the ion beam etcher, and the blocking block group is composed of two blocking blocks arranged at intervals, and a plurality of buffer devices 50 are provided on the same side of the mounting bracket 30 and the blocking block 40, and the buffer device 50 cooperates with the blocking block 40 to assist in limiting the rotation angle of the shaft 24 sleeved in the magnetic fluid 23, thereby limiting the rotation angle of the carrier plate 1.

[0007] Furthermore, the buffer device 50 is a hydraulic buffer.

[0008] In some embodiments, the buffer device 50 is adjustable and disposed on one side of the mounting bracket 30 according to the required rotation angle of the stage plate 1 .

[0009] Furthermore, the buffer device 50 is installed on one side of the mounting frame 30 through a buffer bracket 51 . The buffer bracket 51 is provided with a first waist-shaped hole 52 for fine-tuning the installation position of the buffer device 50 .

[0010] In some embodiments, a sensing block 60 is further provided between the two blocking blocks 40 , and a position sensor 70 is provided on the same side of the mounting frame 30 and the sensing block 60 . When the sensing block 60 reaches the position sensor 70 , it stops rotating to assist in limiting the rotation position of the carrier plate 1 .

[0011] Furthermore, the position sensor 70 is mounted on one side of the mounting bracket 30 via a position sensor bracket 71 . The position sensor bracket 71 is provided with a second waist-shaped hole 72 for fine-tuning the mounting position of the position sensor 70 .

[0012] In some embodiments, a position sensor 70 and a buffer device 50 are provided at the same limited angle to double-limit the rotation position of the carrier plate 1, so that the carrier plate 1 can reach the auxiliary limited rotation position more accurately.

[0013] Furthermore, the distribution of the position sensor 70 and / or the buffer device 50 can enable the rotation position of the carrier plate 1 to stay at four positions: 90°, 45°, 135°, and 0°. When the rotation position of the carrier plate 1 is 0°, it is used to install or remove the wafer. When the rotation position of the carrier plate 1 is 90°, the ion beam of the ion source can bombard the crystal source head-on. When the rotation position of the carrier plate 1 is 45° or 135°, the ion beam of the ion source can bombard the edge of the crystal source.

[0014] In some embodiments, the shaft 24 of the magnetic fluid 23 is a hollow structure, and a wire tube 80 is set in the shaft 24 of the magnetic fluid 23. One end of the wire tube 80 is fixedly connected to the mounting bracket 30. The wire tube 80 is connected to the rotating arm 11, providing the rotating arm 11 with the necessary air pipe and wire passages to ensure that the vacuum in the etching chamber of the ion beam etching machine is leak-proof.

[0015] Beneficial effects of the present invention: The present invention proposes a rotating axis device for a wafer carrier of an ion beam etching machine, comprising a carrier plate 1, a rotating arm 11 fixedly mounted on the carrier plate 1, the rotating arm 11 being used to connect with an external rotating drive structure 20, and rotating through the external rotating drive structure 20, so that the etching of the wafer is more uniform, the rotating drive structure 20 comprises a first servo motor 21, the output end of the first servo motor 21 is connected to a reducer 22, a magnetic fluid 23 is fixed on a connecting sleeve 90, the connecting sleeve 90 is fixedly connected to a side wall of the etching chamber of the ion beam etching machine, one end of the shaft 24 sleeved in the magnetic fluid 23 passes through a side wall of the etching chamber of the ion beam etching machine and is connected to the carrier plate 1, and is connected to the carrier plate 1 through the first servo motor 21 and The reducer 22 rotates the shaft 24 of the magnetic fluid 23, thereby driving the carrier plate 1 to rotate, and is characterized in that: the end of the connecting sleeve 90 away from the etching chamber of the ion beam etcher is fixedly sleeved with a mounting bracket 30, and the other end of the shaft 24 sleeved in the magnetic fluid 23 is sleeved with the reducer 22 and the mounting bracket 30 in sequence, and a group of blocking blocks is provided at the end of the shaft 24 sleeved in the magnetic fluid 23 away from the etching chamber of the ion beam etcher, and the blocking block group is composed of two blocking blocks arranged at intervals. A plurality of buffer devices 50 are provided on the same side of the mounting bracket 30 and the blocking block 40, and the buffer device 50 cooperates with the blocking block 40 to limit the rotation angle of the shaft 24 sleeved in the magnetic fluid 23, thereby assisting in limiting the rotation angle of the carrier plate 1. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1This is a diagram showing the installation structure of the rotating axis device of the wafer carrier of the ion beam etching machine of the present invention.

[0017] Figure 2 This is an overall structural diagram of the rotating axis device of the wafer carrier of the ion beam etching machine of the present invention.

[0018] Figure 3 It is a partial cross-sectional view of the rotating axis device of the wafer carrier of the ion beam etching machine of the present invention.

[0019] Description of main component symbols

[0020] The carrier plate 1, the rotating arm 11, the rotating drive structure 20, the first servo motor 21, the reducer 22, the magnetic fluid 23, the shaft 24, the mounting frame 30, the blocking block 40, the buffer device 50, the buffer bracket 51, the first waist-shaped hole 52, the sensing block 60, the position sensor 70, the position sensor bracket 71, the second waist-shaped hole 72, the wire tube 80, and the connecting sleeve 90.

[0021] The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION Example 1:

[0022] like Figure 1 As shown, a rotating axis device of a wafer carrier of an ion beam etching machine includes a carrier plate 1, on which a rotating arm 11 is fixedly mounted. The rotating arm 11 is used to be connected to an external rotating drive structure 20 and rotated by the external rotating drive structure 20, so that the etching of the wafer is more uniform.

[0023] like Figure 2As shown, the rotary drive structure 20 includes a first servo motor 21, the output end of the first servo motor 21 is connected to the reducer 22, the magnetic fluid 23 is fixed on the connecting sleeve 90, the connecting sleeve 90 is fixedly connected to a side wall of the etching chamber of the ion beam etcher, one end of the shaft 24 sleeved in the magnetic fluid 23 passes through a side wall of the etching chamber of the ion beam etcher and is connected to the carrier plate 1, the shaft 24 of the magnetic fluid 23 is rotated by the first servo motor 21 and the reducer 22, thereby driving the carrier plate 1 to rotate, the end of the connecting sleeve 90 away from the etching chamber of the ion beam etcher is fixedly sleeved with a mounting bracket 30, the other end of the shaft 24 sleeved in the magnetic fluid 23 is sequentially sleeved with the reducer 22 and the mounting bracket 30, the etching chamber away from the ion beam etcher. A group of blocking blocks is provided at the end of the shaft 24 sleeved in the magnetic fluid 23, and the blocking block group is composed of two blocking blocks arranged at intervals. A plurality of buffer devices 50 are provided on the same side of the mounting frame 30 and the blocking block 40. The buffer device 50 cooperates with the blocking block 40 to assist in limiting the rotation angle of the shaft 24 sleeved in the magnetic fluid 23, thereby limiting the rotation angle of the carrier plate 1. The buffer device 50 is an oil pressure buffer. The buffer device 50 is adjustable on one side of the mounting frame 30 according to the required rotation angle of the carrier plate 1. The buffer device 50 is installed on one side of the mounting frame 30 through a buffer bracket 51. The buffer bracket 51 is provided with a first waist-shaped hole 52 for fine-tuning the installation position of the buffer device 50.

[0024] A sensing block 60 is also provided between the two blocking blocks 40. A position sensor 70 is provided on the same side of the mounting frame 30 and the sensing block 60. When the sensing block 60 reaches the position sensor 70, it stops rotating to assist in limiting the rotation position of the carrier plate 1. The position sensor 70 is installed on one side of the mounting frame 30 through a position sensor bracket 71. The position sensor bracket 71 is provided with a second waist-shaped hole 72 for fine-tuning the installation position of the position sensor 70.

[0025] At the same limited angle, a position sensor 70 and a buffer device 50 are provided at the same time to perform doubly limiting the rotation position of the carrier plate 1, so that the carrier plate 1 can reach the auxiliary limited rotation position more accurately. The distribution of the position sensor 70 and / or the buffer device 50 can make the rotation position of the carrier plate 1 stay at the four positions of 90°, 45°, 135°, and 0°. When the rotation position of the carrier plate 1 is 0°, it is used to install or remove the wafer. When the rotation position of the carrier plate 1 is 90°, the ion beam of the ion source can bombard the crystal source head-on. When the rotation position of the carrier plate 1 is 45° or 135°, the ion beam of the ion source can bombard the edge of the crystal source.

[0026] like Figure 3As shown, the shaft 24 of the magnetic fluid 23 is a hollow structure, and a wire tube 80 is set in the shaft 24 of the magnetic fluid 23. One end of the wire tube 80 is fixedly connected to the mounting frame 30. The wire tube 80 is connected to the rotating arm 11, providing the rotating arm 11 with the necessary air pipe and wire passages, so as to ensure that the vacuum in the etching chamber of the ion beam etching machine is leak-proof.

[0027] Beneficial effects of the present invention: The present invention proposes a rotating axis device for a wafer carrier of an ion beam etching machine, comprising a carrier plate 1, a rotating arm 11 fixedly mounted on the carrier plate 1, the rotating arm 11 being used to connect with an external rotating drive structure 20, and rotating through the external rotating drive structure 20, so that the etching of the wafer is more uniform, the rotating drive structure 20 comprises a first servo motor 21, the output end of the first servo motor 21 is connected to a reducer 22, a magnetic fluid 23 is fixed on a connecting sleeve 90, the connecting sleeve 90 is fixedly connected to a side wall of the etching chamber of the ion beam etching machine, one end of the shaft 24 sleeved in the magnetic fluid 23 passes through a side wall of the etching chamber of the ion beam etching machine and is connected to the carrier plate 1, and is connected to the carrier plate 1 through the first servo motor 21 and The reducer 22 rotates the shaft 24 of the magnetic fluid 23, thereby driving the carrier plate 1 to rotate, and is characterized in that: the end of the connecting sleeve 90 away from the etching chamber of the ion beam etcher is fixedly sleeved with a mounting bracket 30, and the other end of the shaft 24 sleeved in the magnetic fluid 23 is sleeved with the reducer 22 and the mounting bracket 30 in sequence, and a group of blocking blocks is provided at the end of the shaft 24 sleeved in the magnetic fluid 23 away from the etching chamber of the ion beam etcher, and the blocking block group is composed of two blocking blocks arranged at intervals. A plurality of buffer devices 50 are provided on the same side of the mounting bracket 30 and the blocking block 40, and the buffer device 50 cooperates with the blocking block 40 to limit the rotation angle of the shaft 24 sleeved in the magnetic fluid 23, thereby assisting in limiting the rotation angle of the carrier plate 1.

[0028] The above-described embodiments merely represent several implementation methods of the present invention. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art would be able to make various modifications and improvements without departing from the concept of the present invention, and these modifications and improvements fall within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

Claims

1. A rotating shaft device for a wafer carrier of an ion beam etching machine, comprising a carrier plate (1), a rotating arm (11) fixedly mounted on the carrier plate (1), the rotating arm (11) being used to connect with an external rotating drive structure (20), and being rotated by the external rotating drive structure (20), so that the etching of the wafer is more uniform, the rotating drive structure (20) comprising a first servo motor (21), the output end of the first servo motor (21) being connected to a reducer (22), a magnetic fluid (23) being fixed on a connecting sleeve (90), the connecting sleeve (90) being fixedly connected to a side wall of an etching chamber of the ion beam etching machine, one end of a shaft (24) sleeved in the magnetic fluid (23) passing through a side wall of the etching chamber of the ion beam etching machine and connected to the carrier plate (1), the shaft (24) of the magnetic fluid (23) being rotated by the first servo motor (21) and the reducer (22), thereby driving the carrier plate (1) to rotate, characterized in that: One end of the connecting sleeve (90) away from the etching chamber of the ion beam etching machine is fixedly sleeved with a mounting frame (30), and the other end of the shaft (24) sleeved in the magnetic fluid (23) is sleeved with the reducer (22) and the mounting frame (30) in sequence. A group of blocking blocks is provided at the end of the shaft (24) sleeved in the magnetic fluid (23) away from the etching chamber of the ion beam etching machine, and the blocking block group is composed of two blocking blocks arranged at intervals. A plurality of buffer devices (50) are provided on the same side of the mounting frame (30) and the blocking block (40). The buffer devices (50) cooperate with the blocking block (40) to assist in limiting the rotation angle of the shaft (24) sleeved in the magnetic fluid (23), thereby limiting the rotation angle of the carrier plate (1).

2. The rotation axis device of the wafer stage of the ion beam etching machine according to claim 1, characterized in that: The buffer device (50) is an oil pressure buffer.

3. The rotation axis device of the wafer stage of the ion beam etching machine according to claim 1, characterized in that: The buffer device (50) is adjustable and arranged on one side of the mounting frame (30) according to the required rotation angle of the platform plate (1).

4. The rotation axis device of the wafer stage of the ion beam etching machine according to claim 1, characterized in that: The buffer device (50) is mounted on one side of the mounting frame (30) via a buffer bracket (51); a first waist-shaped hole (52) is provided on the buffer bracket (51) for fine-tuning the mounting position of the buffer device (50).

5. The rotation axis device of the wafer stage of the ion beam etching machine according to claim 1, characterized in that: A sensing block (60) is further provided between the two blocking blocks (40), and a position sensor (70) is provided on the same side of the mounting frame (30) and the sensing block (60). When the sensing block (60) reaches the position sensor (70), it stops rotating, thereby assisting in limiting the rotational position of the carrier plate (1).

6. The rotation axis device of the wafer stage of the ion beam etching machine according to claim 5, characterized in that: The position sensor (70) is mounted on one side of the mounting frame (30) via a position sensor bracket (71); a second waist-shaped hole (72) is provided on the position sensor bracket (71) for fine-tuning the mounting position of the position sensor (70).

7. The rotation axis device of the wafer stage of the ion beam etching machine according to claim 1, characterized in that: At the same limited angle, a position sensor (70) and a buffer device (50) are provided simultaneously to perform a double limit on the rotation position of the carrier plate (1), thereby making the carrier plate (1) reach the auxiliary limited rotation position more accurately.

8. The rotation axis device of the wafer stage of the ion beam etching machine according to claim 5, characterized in that: The distribution of the position sensor (70) and / or the buffer device (50) can enable the rotation position of the carrier plate (1) to stay at four positions: 90°, 45°, 135°, and 0°. When the rotation position of the carrier plate (1) is 0°, it is used to install or remove the wafer. When the rotation position of the carrier plate (1) is 90°, the ion beam of the ion source can bombard the crystal source head-on. When the rotation position of the carrier plate (1) is 45° or 135°, the ion beam of the ion source can bombard the edge of the crystal source.

9. The rotation axis device of the wafer stage of the ion beam etching machine according to claim 1, characterized in that: The shaft (24) of the magnetic fluid (23) is a hollow structure. A wire tube (80) is arranged in the shaft (24) of the magnetic fluid (23). One end of the wire tube (80) is fixedly connected to the mounting frame (30). The wire tube (80) is connected to the rotating arm (11) to provide the rotating arm (11) with the required air pipe and wire passage, thereby ensuring that the vacuum in the etching chamber of the ion beam etching machine does not leak.

Images