Electronic package
By setting semiconductors and optoelectronic components on the load-bearing structure, and covering the shielding layer on the optoelectronic components and removing them to expose the optical action surface, the problem of cumbersome co-packaging optical module process is solved, and cost reduction and yield improvement are achieved.
Patent Information
- Application Number
- CN202422017688.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Priority Date
- 2024-08-12
- Filing Date
- 2024-08-20
- Publication Date
- 2025-08-26
- Estimated Expiration
- 2034-08-20
AI Technical Summary
The existing co-packaged optical modules have cumbersome processes, resulting in slow process speed, difficult to improve yield and high cost.
The semiconductor element and the photoelectric element are arranged on the bearing structure, and the shielding layer is covered on the optical action surface of the photoelectric element. After forming a cladding layer, the shielding layer is removed to expose the optical action surface, simplifying the packaging process.
This reduces process costs and improves process yields, and simplifies the process flow of co-packaged optical modules.
Smart Images
Figure CN223273271U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to a semiconductor device, and more particularly to an electronic package having a photoelectric component. Background Art
[0002] With the booming electronics industry, electronic products are increasingly becoming more multifunctional and high-performance. The application of fifth-generation (5G) communication technology has expanded to various fields, including the Internet of Things (IoT), Industrial Internet of Things (IIoT), cloud computing, artificial intelligence (AI), autonomous vehicles, and healthcare. This expansion in applications generates massive amounts of data, requiring efficient transmission, computing, and storage. The surge in demand for data transmission in particular has led to the industry shifting from electricity to light as a data transmission medium, increasing transmission capacity, efficiency, and distance while reducing energy consumption. Against this backdrop, silicon photonics components, their application products, and co-packaged optical modules have become a key development trend in semiconductor and packaging technologies.
[0003] Co-packaged optical modules primarily integrate electronic integrated circuit (EIC) components and photonic integrated circuit (PIC) components into a single package. While the EIC's packaging design is similar to that of traditional logic chips, allowing for direct encapsulation with a colloid, PICs transmit optical signals and require connection via external optical devices. This requires special considerations for packaging design, making the co-packaged optical module manufacturing process overly complex. This not only slows down the manufacturing process but also makes it difficult to maintain or improve yield, ultimately preventing manufacturing costs from being reduced.
[0004] Therefore, how to overcome the above-mentioned problems of the prior art has become a topic that needs to be solved urgently. Utility Model Content
[0005] In view of the various deficiencies of the above-mentioned prior art, the present application provides an electronic package, comprising: a supporting structure; a semiconductor element, disposed on the supporting structure and electrically connected to the supporting structure, wherein the semiconductor element has a relative active surface and an inactive surface, and is disposed on the supporting structure with the active surface; a photoelectric element, disposed on the supporting structure and electrically connected to the supporting structure, wherein the photoelectric element has a relative optical active surface and a connecting surface, and is disposed on the supporting structure with the connecting surface; and a coating layer, formed on the supporting structure to coat the semiconductor element and the photoelectric element, and to expose the optical active surface outside the coating layer, wherein the upper surface of the coating layer has a height difference with the optical active surface of the photoelectric element.
[0006] The present application also provides a method for manufacturing an electronic package, comprising: arranging a semiconductor element and a photoelectric element on a first side of a supporting structure, wherein the semiconductor element has an active surface and an inactive surface relative to each other, and the active surface is arranged on the supporting structure, and the photoelectric element has an optically active surface and a connecting surface relative to each other, and the connecting surface is arranged on the supporting structure; arranging a shielding layer on the optically active surface; forming a coating layer on the supporting structure to cover the semiconductor element, the photoelectric element and the shielding layer, and exposing the coating layer; and removing the shielding layer to expose the optically active surface of the photoelectric element, and making the upper surface of the coating layer have a height difference with the optically active surface of the photoelectric element.
[0007] In the aforementioned electronic package and its manufacturing method, the semiconductor element is an electronic integrated circuit.
[0008] In the aforementioned electronic package and its manufacturing method, the optoelectronic element is a photonic integrated circuit.
[0009] The aforementioned electronic package and its manufacturing method further include an electronic component disposed on the supporting structure and electrically connected to the supporting structure.
[0010] In the aforementioned electronic package and its manufacturing method, the non-active surface of the semiconductor element exposes the coating layer.
[0011] In the aforementioned electronic package and its manufacturing method, the upper surface of the coating layer is flush with the inactive surface of the semiconductor element.
[0012] In the aforementioned electronic package and its manufacturing method, the height difference is 10-20 μm.
[0013] In the aforementioned electronic package and its manufacturing method, the covering layer is formed with an opening to expose the optically active surface, and the plane size of the opening can be selected to be larger or smaller than the plane size of the optoelectronic element.
[0014] In the aforementioned electronic package and its manufacturing method, the center position of the opening of the covering layer is offset from the center position of the photoelectric element by a distance.
[0015] The aforementioned electronic package and its manufacturing method further include an optical device disposed on the photoelectric element. The optical device is an optical fiber array unit connected to the optical fiber.
[0016] In the aforementioned electronic package and its manufacturing method, the supporting structure has a first side and a second side opposite to each other. The semiconductor element and the optoelectronic element are disposed on the first side, and a plurality of conductive elements are connected to the second side.
[0017] As can be seen from the above, the electronic package and its manufacturing method of the present application are mainly achieved by arranging semiconductor elements and optoelectronic elements on a supporting structure, covering the optical active surface of the optoelectronic element with a shielding layer, then forming a coating layer covering the semiconductor element and the optoelectronic element, and removing the shielding layer to expose the optical active surface for subsequent connection to an optical device (optical fiber). Thus, the coating layer covering the semiconductor element and the optoelectronic element can be formed by a traditional packaging colloid, and at the same time, by removing the shielding layer pre-arranged on the optoelectronic element, the coating layer is formed with an opening exposing the optical active surface, so that it can be connected to an external optical device, thereby simplifying the co-encapsulation optical module process, thereby reducing the process cost and improving the process yield. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Figures 1A to 1D It is a cross-sectional schematic diagram of the manufacturing method of the electronic package of the present application.
[0019] Figure 1E This is a top view schematic diagram of the electronic package of the present application.
[0020] Figure 2 FIG. 1 is a cross-sectional diagram of a second embodiment of the electronic package of the present application.
[0021] Figure 3A and Figure 3B 1 is a schematic cross-sectional view and a schematic top view of a third embodiment of the electronic package of the present application.
[0022] Figure 4 2 is a schematic cross-sectional view of a fourth embodiment of the electronic package of the present application.
[0023] Main component symbols
[0024] 1,2,3,4 Electronic packaging
[0025] 10 Load-bearing structure
[0026] 10a First side
[0027] 10b Second side
[0028] 100 Insulation
[0029] 101 Circuit Layer
[0030] 11 Semiconductor components
[0031] 11a Active surface
[0032] 11b Non-active surface
[0033] 12 Photoelectric components
[0034] 12a Optical action surface
[0035] 12b Connecting surface
[0036] 13 Electronic components
[0037] 14 Shielding layer
[0038] 15 cladding
[0039] 150 Opening
[0040] 16 Conductive elements
[0041] 17 Optical Devices
[0042] 40 Adhesive layer
[0043] D Height difference
[0044] L fiber optic. DETAILED DESCRIPTION
[0045] The following describes the implementation of the present application through specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification.
[0046] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings attached to this specification are only used to match the contents disclosed in the specification for the understanding and reading of those skilled in the art, and are not used to limit the limiting conditions for the implementation of this application. Therefore, they have no substantial technical significance. Any modification of the structure, change in the proportional relationship, or adjustment of the size should still fall within the scope of the technical content disclosed in this application without affecting the efficacy and purpose that can be achieved by this application. At the same time, terms such as "upper", "first", "second", "third", "one", etc. quoted in this specification are only for the convenience of description and are not used to limit the scope of the implementation of this application. Changes or adjustments in their relative relationships should also be regarded as the scope of the implementation of this application without substantially changing the technical content.
[0047] Figures 1A to 1D It is a cross-sectional schematic diagram of a method for manufacturing the electronic package 1 of the present application.
[0048] like Figure 1AAs shown, a supporting structure 10 is first provided, and the supporting structure has a first side 10a and a second side 10b opposite to each other.
[0049] The carrier structure 10 can be a redistribution layer (RDL) structure or a semiconductor package substrate. In this embodiment, the carrier structure 10 is a semiconductor package substrate, comprising at least one insulating layer 100 and at least one wiring layer 101 bonded to the insulating layer 100. It should be understood that the carrier structure 10 can also be other substrates, such as a lead frame, an interposer, a wafer, or other substrates with metal routing, and is not limited to the above.
[0050] Then, a semiconductor element 11 , an optoelectronic element 12 , and an electronic element 13 are disposed on the first side 10 a of the carrier structure 10 , and the semiconductor element 11 , the optoelectronic element 12 , and the electronic element 13 are electrically connected to the carrier structure 10 .
[0051] The semiconductor element 11 can be various active elements or passive elements. In this embodiment, it is an electronic integrated circuit (EIC), but the present invention is not limited thereto.
[0052] The semiconductor device 11 has an active surface 11 a and an inactive surface 11 b opposite to each other, and the semiconductor device 11 is mounted on the supporting structure 10 via the active surface 11 a .
[0053] The optoelectronic element 12 may be a photoelectric converter, an optical signal receiver, an optical signal transmitter, or a photonic integrated circuit (PIC) that meets the functional requirements. In this embodiment, the photonic integrated circuit is used, but the present invention is not limited thereto.
[0054] The photoelectric element 12 has an opposing optically active surface 12a and a mounting surface 12b, with the mounting surface 12b disposed on the supporting structure 10. A shielding layer 14 is disposed on the optically active surface 12a to cover at least a portion of the optically active surface 12a. The shielding layer 14 is a polymeric organosilicon compound, such as PDMS (polydimethylsiloxane).
[0055] The electronic component 13 can be an active component such as a switch chip, a High Bandwidth Memory (HBM) chip, or other functional chip, or a passive component such as a resistor, capacitor, or inductor. This embodiment does not limit the type of component as long as it meets the functional requirements of the design.
[0056] like Figure 1B As shown, a coating layer 15 is formed on the supporting structure 10 to cover the semiconductor element 11, the optoelectronic element 12, the electronic element 13 and the shielding layer 14. The coating layer 15 is, for example, an encapsulant.
[0057] like Figure 1C As shown, a thinning process is performed, such as by polishing, to remove a portion of the cladding layer 15 (or even a portion of the shielding layer 14), so that the inactive surface 11b of the semiconductor element 11 and the shielding layer 14 are exposed to the cladding layer 15. The inactive surface 11b is flush (coplanar) with the upper surface of the cladding layer 15. Exposing the inactive surface 11b of the semiconductor element 11 to the cladding layer 15 can improve the heat dissipation effect of the semiconductor element 11.
[0058] like Figure 1D As shown, the masking layer 14 is removed by, for example, tape bonding to expose at least a portion of the optically active surface 12a of the optoelectronic element 12 for subsequent connection to an optical device (not shown), and a plurality of conductive elements 16 are arranged on the second side 10b of the supporting structure 10 to obtain the electronic package 1 of the present application.
[0059] Due to the removal of the shielding layer 14, a height difference D exists between the upper surface of the cladding layer 15 and the optically active surface 12a of the optoelectronic device 12. That is, the upper surface of the cladding layer 15 and the optically active surface 12a of the optoelectronic device 12 are not flush (coplanar), thereby reducing damage to the optically active surface 12a. Furthermore, the height difference D between the upper surface of the cladding layer 15 and the optically active surface 12a of the optoelectronic device 12 is 10 to 20 μm, which can prevent alignment issues in the subsequent optical device.
[0060] Please refer to Figure 1E As the shielding layer 14 is removed, an opening 150 is formed in the cladding layer 15 , wherein the planar size of the opening 150 is smaller than the planar size of the photoelectric element 12 (optically active surface 12 a ).
[0061] Through the above-mentioned manufacturing method, the electronic package 1 of the present application includes: a supporting structure 10; a semiconductor element 11, which is arranged on the supporting structure 10 and electrically connected to the supporting structure 10; a photoelectric element 12, which is arranged on the supporting structure 10 and electrically connected to the supporting structure 10, wherein the photoelectric element 12 has a relative optical active surface 12a and a connecting surface 12b, and is arranged on the supporting structure 10 through the connecting surface 12b; and a coating layer 15, which is formed on the supporting structure 10 to cover the semiconductor element 11 and the photoelectric element 12, and the optical active surface 12a is exposed outside the coating layer 15, wherein the upper surface of the coating layer has a height difference with the optical active surface of the photoelectric element.
[0062] Please refer to Figure 2 , is a cross-sectional schematic diagram of the second embodiment of the electronic package 2 of the present application.
[0063] This embodiment is substantially the same as the aforementioned embodiment, with the main difference being that the planar size of the shielding layer 14 covering the photoelectric element 12 is larger than the planar size of the photoelectric element 12. Therefore, when the encapsulation layer 15 is subsequently formed and the shielding layer 14 is removed, the planar size of the opening 150 of the encapsulation layer 15 is larger than the planar size of the photoelectric element 12 (optically active surface 12a).
[0064] In an embodiment of the present application, the planar size of the opening 150 of the cladding layer 15 can be selected to be larger or smaller than the planar size of the optoelectronic element 12, which can be determined according to the size of the optical device (not shown) to be coupled. For example, in one embodiment, if the opening 150 is larger, the coupling effect between the optical device and the optoelectronic element 12 is better. In another embodiment, if the opening 150 is small, the optical device is easier to align with the optoelectronic element 12.
[0065] Please refer to Figure 3A and Figure 3B , which are a cross-sectional schematic diagram and a plan schematic diagram of the third embodiment of the electronic package 3 of the present application.
[0066] This embodiment is substantially the same as the aforementioned embodiment, with the main difference being that the center position of the shielding layer 14 previously covering the photoelectric element 12 can be offset from the center position of the photoelectric element 12 by a certain distance. Therefore, when the cladding layer 15 is subsequently formed and the shielding layer 14 is removed, the center position of the opening 150 of the cladding layer 15 can be offset from the center position of the photoelectric element 12 by a certain distance, so as to connect the desired optical device according to actual conditions.
[0067] Please refer to Figure 4 , is a cross-sectional schematic diagram of the fourth embodiment of the electronic package 4 of the present application.
[0068] This embodiment is substantially the same as the aforementioned embodiment, with the main difference being that the electronic package 4 further includes an optical device 17 disposed on the optoelectronic element 12 , such as a fiber array unit (FAU) connected to an optical fiber L, and the optical fiber L can be disposed on the cladding layer 15 via an adhesive layer 40 .
[0069] In summary, the electronic package and its manufacturing method of the present application are mainly achieved by arranging semiconductor elements and optoelectronic elements on a supporting structure, covering the optical active surface of the optoelectronic element with a shielding layer, then forming a coating layer covering the semiconductor element and the optoelectronic element, and removing the shielding layer to expose the optical active surface for subsequent connection to an optical device (optical fiber). Thus, the coating layer covering the semiconductor element and the optoelectronic element can be formed by a traditional packaging colloid, and at the same time, by removing the shielding layer pre-arranged on the optoelectronic element, the coating layer is formed with an opening exposing the optical active surface, so that it can be connected to an external optical device, thereby simplifying the co-encapsulation optical module manufacturing process, thereby reducing the process cost and improving the process yield.
[0070] The above embodiments are intended only to illustrate the principles and effects of this application and are not intended to limit this application. Those skilled in the art may modify the above embodiments without departing from the spirit and scope of this application. Therefore, the scope of protection of this application shall be as set forth in the claims.
Claims
1. An electronic package, characterized in that: include: load-bearing structure; A semiconductor element having an active surface and an inactive surface opposite to each other, wherein the active surface is disposed on the supporting structure and electrically connected to the supporting structure; The photoelectric element has an optically active surface and a mounting surface opposite to each other, and the mounting surface is disposed on the supporting structure and electrically connected to the supporting structure; as well as A cladding layer is formed on the supporting structure to cover the semiconductor element and the optoelectronic element, and the optical active surface is exposed to the cladding layer. There is a height difference between the upper surface of the cladding layer and the optical active surface of the optoelectronic element.
2. The electronic package according to claim 1, wherein: The semiconductor component is an electronic integrated circuit.
3. The electronic package according to claim 1, wherein: The optoelectronic component is a photonic integrated circuit.
4. The electronic package according to claim 1, wherein: The electronic package also includes an electronic component which is arranged on the supporting structure and electrically connected to the supporting structure.
5. The electronic package according to claim 1, wherein: The cladding layer is exposed outside the inactive surface of the semiconductor element.
6. The electronic package according to claim 1, wherein: The upper surface of the cladding layer is flush with the inactive surface of the semiconductor element.
7. The electronic package according to claim 1, wherein: The height difference is 10 to 20 μm.
8. The electronic package according to claim 1, wherein: The cladding layer is formed with an opening to expose the optically active surface, and the plane size of the opening can be selected to be larger or smaller than the plane size of the photoelectric element.
9. The electronic package according to claim 8, wherein: The center position of the opening of the cladding layer is offset from the center position of the photoelectric element by a distance.
10. The electronic package according to claim 1, wherein The electronic package also includes an optical device arranged on the photoelectric element.
11. The electronic package according to claim 10, wherein: The optical device is an optical fiber array unit connected to optical fibers.
12. The electronic package according to claim 1, wherein The supporting structure has a first side and a second side opposite to each other. The semiconductor element and the photoelectric element are disposed on the first side, and a plurality of conductive elements are connected to the second side.