Reactor and semiconductor material growth equipment

Abstract

The utility model relates to the technical field of semiconductor processing, and discloses a reactor and semiconductor material growth equipment. The reactor comprises a shell, a lifting device, a heating device and a spraying device. The shell is provided with a reaction cavity; the lifting device comprises a lifting driving part and a carrying disc, the lifting driving part is arranged at the cavity bottom of the reaction cavity, and the lifting driving part is in driving connection with the carrying disc, so that the carrying disc moves up and down between the first reaction area and the second reaction area; the heating device comprises a first heating piece and a second heating piece, and the first heating piece is used for heating the first reaction area to a first preset temperature; the second heating element is used for heating the second reaction area to a second preset temperature; the first reaction zone is higher than the second reaction zone, and the first preset temperature is lower than the second preset temperature; the spraying device is arranged at the top of the reaction cavity and is used for spraying reactants. According to the utility model, growth of a drift layer and a polarization layer is carried out in one reactor, the migration rate of two-dimensional electron gas is higher, and the pressure resistance is better.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing, in particular to a reactor and semiconductor material growth equipment. Background Art

[0002] The third generation of semiconductors are wide bandgap semiconductor materials based on drift layers and polarization layers. The bandgap width of the drift layer is relatively large and can withstand high voltage. The material of the polarization layer needs to have strong spontaneous polarization, and nitride is often used. The two-dimensional electron gas of the polarization layer is relatively strong. The combination of the two has the characteristics of high breakdown electric field, high saturation electron velocity, high thermal conductivity, high electron density, high mobility, and the ability to withstand high power.

[0003] However, the growth system of each layer of material is completely different, and the existing reaction chamber structure is not compatible with the growth of two material systems. If two reaction chambers are used, impurities between the two material systems will cause leakage during the growth process, reducing the mobility and withstand voltage of the third-generation semiconductor.

[0004] Based on this, there is an urgent need for a reactor and semiconductor material growth equipment to solve the above-mentioned problems. Utility Model Content

[0005] Based on the above, the purpose of the present invention is to provide a reactor and semiconductor material growth equipment, which realizes the growth of drift layer and polarization layer in one reactor without replacing the reaction chamber. The mobility of the two-dimensional electron gas is higher, the pressure resistance is better, and the product quality is improved.

[0006] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0007] In one aspect, a reactor is provided, comprising:

[0008] a housing provided with a reaction chamber;

[0009] a lifting device comprising a lifting drive and a carrier plate, wherein the lifting drive is disposed at the bottom of the reaction chamber and is drivably connected to the carrier plate to move the carrier plate upward and downward between the first reaction zone and the second reaction zone;

[0010] The heating device comprises a first heating element and a second heating element, wherein the first heating element is used to heat the first reaction zone to a first preset temperature; and the second heating element is used to heat the second reaction zone to a second preset temperature; the first reaction zone is higher than the second reaction zone, and the first preset temperature is lower than the second preset temperature;

[0011] A spray device is arranged at the top of the reaction chamber and is used for spraying reactants.

[0012] As an optimal technical solution for a reactor, the spray device includes a spray head, a plurality of air vents are evenly arranged on the spray head, a pipeline is arranged in the air vent, a first gas channel is formed between the pipeline and the inner wall of the air vent, and a second gas channel is arranged in the pipeline. The first gas channel is used to spray the first reaction gas, and the second gas channel is used to spray the second reaction gas.

[0013] As a preferred technical solution for a reactor, the diameter of the pipeline is adjustable to adjust the ratio of the cross-sectional areas of the first gas channel and the second gas channel.

[0014] As a preferred technical solution for a reactor, the diameter of the second gas channel is D, the distance between the carrier plate and the spray device is A, and the ratio of D to A is in the range of 0.001-0.05.

[0015] As a preferred technical solution for a reactor, the lifting drive member is a lifting motor or a hydraulic cylinder.

[0016] As a preferred technical solution for a reactor, both the first heating element and the second heating element are heated by induction coils.

[0017] As a preferred technical solution of a reactor, the heating temperature range of the first heating element is 1000°C-1300°C; and / or

[0018] The heating temperature of the second heating element ranges from 1300°C to 1650°C.

[0019] As a preferred technical solution of a reactor, when the carrier plate is located in the first reaction zone, the distance between the carrier plate and the spray device is 30 mm to 80 mm; and / or

[0020] When the carrier plate is located in the second reaction zone, the distance between the carrier plate and the spray device is 150 mm to 200 mm.

[0021] On the other hand, a semiconductor material growth device is provided, comprising the reactor described in any of the above schemes.

[0022] The beneficial effects of the utility model are:

[0023] The present invention provides a reactor and semiconductor material growth equipment. During processing, a substrate is placed on a carrier; the carrier moves to a second reaction zone, a spray device sprays reactants, a second heating element heats the second reaction zone to a second preset temperature, and the reactants are deposited on the surface of the substrate to form a drift layer, thereby meeting the requirements that the drift layer requires a relatively high temperature and a relatively large reaction chamber height; then, the carrier moves to a first reaction zone, a spray device sprays reactants, the first heating element heats the first reaction zone to a first preset temperature, and the reactants are deposited on the surface of the drift layer to form a polarization layer, thereby meeting the requirements that the polarization layer requires a relatively low temperature and a relatively small reaction chamber height. The present invention realizes the growth of a drift layer and a polarization layer in one reactor without the need to replace the reaction chamber, reduces interface contamination and defects during the growth process, avoids impurities and contaminants that may be introduced due to the replacement of the reaction chamber during material conversion, and thus ensures a high-quality interface between the drift layer and the polarization layer. The high-quality interface reduces the scattering and energy loss of electrons during transmission, thereby improving the mobility of the two-dimensional electron gas. The integrated growth also optimizes the stress distribution inside the material, allowing the polarization layer to more effectively exert its electrical properties, such as enhancing electric field shielding and increasing carrier concentration, all of which help to improve the voltage resistance of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following is a brief introduction to the drawings required for use in the description of the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the contents of the embodiments of the present invention and these drawings without paying any creative work.

[0025] Figure 1 It is a structural schematic diagram of a reactor provided in a specific embodiment of the utility model;

[0026] Figure 2 It is a structural schematic diagram of a spray device provided in a specific embodiment of the present utility model.

[0027] The following are marked in the figure:

[0028] 1. Shell; 11. Reaction chamber; 12. First reaction zone; 13. Second reaction zone;

[0029] 2. Lifting device; 21. Carrying plate;

[0030] 3. Heating device; 31. First heating element; 32. Second heating element;

[0031] 4. Spraying device; 41. Spraying head; 42. Pipeline; 43. First gas channel; 44. Second gas channel. DETAILED DESCRIPTION

[0032] The present invention will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are intended only to illustrate the present invention and are not intended to limit the present invention. It should also be noted that, for ease of description, the accompanying drawings only illustrate portions relevant to the present invention, not all of its components.

[0033] In the description of this utility model, unless otherwise specified or limited, the terms "connected," "connect," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0034] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0035] In the description of this embodiment, terms such as "upper," "lower," "left," and "right" are used to refer to positions or locations based on the positions or locations shown in the accompanying drawings. These terms are intended solely to facilitate description and simplify operation, and are not intended to indicate or imply that the devices or components referred to must have, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this invention. Furthermore, the terms "first" and "second" are used solely for descriptive purposes and have no special meaning.

[0036] like Figure 1As shown, this embodiment provides a semiconductor material growth device, including a reactor, which includes a shell 1, a lifting device 2, a heating device 3 and a spray device 4. Specifically, the shell 1 is provided with a reaction chamber 11; the lifting device 2 includes a lifting drive (not shown) and a carrier 21, the lifting drive is provided at the bottom of the reaction chamber 11, and the lifting drive is driven and connected to the carrier 21 so that the carrier 21 can be lifted and moved between the first reaction zone 12 and the second reaction zone 13; the heating device 3 includes a first heating element 31 and a second heating element 32, the first heating element 31 is used to heat the first reaction zone 12 to a first preset temperature; the second heating element 32 is used to heat the second reaction zone 13 to a second preset temperature; the first reaction zone 12 is higher than the second reaction zone 13, and the first preset temperature is lower than the second preset temperature; the spray device 4 is provided at the top of the reaction chamber 11, and the spray device 4 is used to spray reactants.

[0037] During processing, the substrate is placed on the carrier 21; the carrier 21 moves to the second reaction zone 13, the spray device 4 sprays reactants, and the second heating element 32 heats the second reaction zone 13 to a second preset temperature. The reactants are deposited on the substrate surface to form a drift layer, meeting the requirements of the drift layer requiring a relatively high temperature and a relatively large reaction chamber 11 height. The carrier 21 then moves to the first reaction zone 12, the spray device 4 sprays reactants, and the first heating element 31 heats the first reaction zone 12 to a first preset temperature. The reactants are deposited on the surface of the drift layer to form a polarization layer, meeting the requirements of the polarization layer requiring a relatively low temperature and a relatively small reaction chamber 11 height. This embodiment achieves the growth of the drift layer and the polarization layer in a single reactor without having to replace the reaction chamber 11. This results in higher mobility of the two-dimensional electron gas and better voltage resistance, thereby improving product quality.

[0038] Preferably, if Figure 1 and Figure 2 As shown, the spray device 4 includes a spray head 41, which is evenly distributed with multiple vents. A pipe 42 is disposed within the vents. A first gas channel 43 is formed between the pipe 42 and the inner wall of the vent. A second gas channel 44 is disposed within the pipe 42. The first gas channel 43 is used to inject a first reactant gas, and the second gas channel 44 is used to inject a second reactant gas. The first gas channel 43 is arranged around the second gas channel 44. When the first gas channel 43 injects the first reactant gas and the second gas channel 44 injects the second reactant gas, the first reactant gas and the second reactant gas are mixed, improving the uniformity of the reactant mixing and, in turn, the molding quality of the product.

[0039] Since the heights of the carrier plate 21 in the first reaction zone 12 and the second reaction zone 13 are different, in order to ensure that the mixing position of the first reaction gas and the second reaction gas is located on the carrier plate 21, in this embodiment, the diameter of the pipeline 42 is adjustable to adjust the ratio of the first gas channel 43 and the second gas channel 44, thereby adjusting the mixing ratio of the first reaction gas and the second reaction gas on the carrier plate 21. In this embodiment, by adjusting the ratio of the cross-sectional areas of the first gas channel 43 and the second gas channel 44, the mixed concentration ratio of the reaction gases on the surface of the growth carrier plate 21 is adjusted. Different concentration ratios determine different properties of the grown material. For example, when growing a drift layer, the first reaction gas is SiH4 and the second reaction gas is CH4. By adjusting the diameter of the pipeline 42, the cross-sectional area ratio of the first gas channel 43 and the second gas channel 44 is 0.05, so that the concentration ratio of the first reaction gas and the second reaction gas is 1:1. When generating the polarization layer, the first reaction gas is TMGa (Trimethyl Gallium) and TMAl (Trimethylaluminium), and the second reaction gas is NH3. The diameter of the pipeline 42 is adjusted, and the ratio of the cross-sectional area of ​​the first gas channel 43 and the second gas channel 44 is 0.005, so that the proportion of NH3 in the mixed gas is greater than 95%. Therefore, by adjusting the diameter of the pipeline 42, the ratio of the first gas channel 43 and the second gas channel 44 is adjusted, and then the concentration ratio of the first reaction gas and the second reaction gas is adjusted to ensure that the above-mentioned concentration ratio requirements are met when generating the polarization layer and the drift layer.

[0040] Furthermore, when generating the drift layer, the background impurity concentration of the first reaction gas and the second reaction gas needs to be low, ensuring that the background impurity concentration is less than 1E15cm -3 Therefore, the mixing length of the first gas channel 43 and the second gas channel 44 needs to be as short as possible to reduce the introduction of impurities. In this embodiment, when the drift layer is generated, the carrier plate 21 is located in the first reaction zone 12. The mixing length of the first reaction gas and the second reaction gas is shortened to reduce the background impurity concentration in the mixed gas. The diameter of the pipeline 42 is increased, and the gas flow rate of the second reaction gas is reduced to ensure that the first reaction gas and the second reaction gas are completely mixed at the carrier plate 21 in the first reaction zone 12.

[0041] When generating the polarization layer, the first reaction gas and the second reaction gas have a pre-mixing process to fully eliminate defects such as vacancies in the material. Therefore, it is necessary to increase the mixing length of the first gas channel 43 and the second gas channel 44 for pre-mixing. In this embodiment, when generating the polarization layer, the carrier plate 21 is located in the second reaction zone 13, and the mixing length of the first reaction gas and the second reaction gas is increased to allow the first reaction gas and the second reaction gas to be fully pre-mixed to eliminate vacancy defects in the material. Reduce the diameter of the pipeline 42, and then increase the gas flow rate of the second reaction gas, to ensure that the mixing position of the first reaction gas and the second reaction gas is located on the carrier plate 21 in the second reaction zone 13.

[0042] In this embodiment, the conduit 42 can be formed by winding a sheet of a certain length. The more turns the sheet is wound, the smaller the diameter of the conduit 42. Conversely, the fewer turns the sheet is wound, the larger the diameter of the conduit 42, thereby achieving adjustable diameter of the conduit 42. Of course, in other embodiments, conduits 42 of different diameters can be directly replaced to adjust the ratio of the first gas channel 43 to the second gas channel 44.

[0043] In this embodiment, the diameter of the second gas channel 44 is D, the distance between the carrier plate 21 and the spray device 4 is A, and the ratio of D to A ranges from 0.001 to 0.05. In computational fluid dynamics (CFD), thermal diffusion and concentration diffusion between gases are key to understanding the multi-component gas mixing process. These two diffusion mechanisms act together in the gas mixture, driving the different gas components to migrate from high-concentration or high-temperature areas to low-concentration or low-temperature areas until equilibrium is reached. In this embodiment, the ratio of D to A ranges from 0.001 to 0.05. This ratio is derived through CFD simulation and experimental data inversion, mainly considering the thermal diffusion and concentration diffusion effects of the first reactant gas and the second reactant gas within the distance from the showerhead 41 to the carrier plate 21. By simulating the dynamic process of gas mixing under different D / A ratios, the diffusion behavior and mixing efficiency of the first reactant gas and the second reactant gas between the spray device 4 and the carrier plate 21 can be observed. When the ratio is within this range, the first and second reaction gases are completely mixed on the carrier plate 21, achieving effective coverage within the distance from the showerhead 41 to the carrier plate 21. If the ratio is too large, the complete mixing point of the first and second reaction gases is too short and cannot reach the carrier plate 21. If the ratio is too small, the complete mixing point will extend beyond the carrier plate 21, making it impossible to form high-quality materials on the carrier plate 21.

[0044] In the prior art, in addition to the different source gas supplies, the growth of drift layer materials requires relatively high temperatures. Moreover, to avoid pre-reaction of the showerhead at high temperatures, the reaction chamber height is relatively large; and to increase the growth rate of nitride materials, the reaction chamber height is generally relatively low.

[0045] Furthermore, both the first heating element 31 and the second heating element 32 are heated by induction coils. In this embodiment, when generating a polarization layer, the first heating element 31 is used for heating. The growth temperature of the nitride material in the polarization layer is relatively low, and the heating temperature range of the first heating element 31 is 1000°C-1300°C, meeting the low growth temperature requirement of the polarization layer; and / or when generating a drift layer, the second heating element 32 is used for heating. The growth temperature of the SiC or GaO material in the drift layer is relatively high, and the heating temperature range of the second heating element 32 is 1300°C-1650°C, meeting the higher growth temperature requirement of the SiC or GaO material in the drift layer. In this embodiment, the heating temperature of the first heating element 31 can be 1000℃, 1050℃, 1100℃, 1150℃, 1200℃, 1250℃ or 1300℃; the heating temperature of the second heating element 32 can be 1300℃, 1350℃, 1400℃, 1450℃, 1500℃, 1550℃, 1600℃ or 1650℃.

[0046] Furthermore, when generating the polarization layer, in order to improve the growth efficiency of the nitride material, the distance between the first reaction zone 12 and the spray device 4 is relatively small, so that the carrier 21 can accumulate a large amount of AlGaN (aluminum gallium nitride) based materials in a short time. In this embodiment, the carrier 21 is located in the first reaction zone 12, and the distance between the carrier 21 and the spray device 4 is 30mm-80mm, which improves the growth efficiency of the nitride material. If the distance between the carrier 21 and the spray device 4 is too large, it will cause excessive accumulation of TMAl and NH3 by-products on the carrier 21 located in the first reaction zone 12, and the growth efficiency will be too low; if the distance between the carrier 21 and the spray device 4 is too small, the first reaction gas and the second reaction gas will accumulate on the carrier 21 before they are completely mixed, affecting the molding quality.

[0047] During drift layer formation, to prevent the high temperature environment of the second reaction zone 13 from causing a pre-reaction of the gases within the spray device 4, the distance between the second reaction zone 13 and the spray device 4 is relatively large. In this embodiment, and / or when the carrier plate 21 is located in the second reaction zone 13, the distance between the carrier plate 21 and the spray device 4 is 150 mm to 200 mm. If the distance between the carrier plate 21 and the spray device 4 is too small, the high temperature environment of the second reaction zone 13 may cause the gases within the spray device to pre-react, resulting in defective products. If the distance between the carrier plate 21 and the spray device 4 is too large, excessive accumulation of SiH4 and CH4 growth byproducts on the carrier plate 21 may occur, resulting in low growth efficiency.

[0048] In this embodiment, when the carrier plate 21 is located in the first reaction zone 12, the distance between the carrier plate 21 and the spray device 4 can be set to 30 mm, 40 mm, 50 mm, 60 mm, 70 mm, or 80 mm. When the carrier plate 21 is located in the second reaction zone 13, the distance between the carrier plate 21 and the spray device 4 can be set to 150 mm, 160 mm, 170 mm, 180 mm, 190 mm, or 200 mm. In this embodiment, the lifting drive member is a lifting motor or a hydraulic cylinder.

[0049] like Figure 1 and Figure 2 As shown, this embodiment also provides a transistor processing process, using the above-mentioned reactor, the transistor processing process includes the following steps:

[0050] S1, placing the substrate on the carrier 21;

[0051] S2, the carrier plate 21 moves to the second reaction zone 13, the spray device 4 sprays the reactants, the second heating element 32 heats the second reaction zone 13 to a second preset temperature, and the reactants are deposited on the substrate surface to form a drift layer;

[0052] S3 , the carrier plate 21 moves to the first reaction zone 12 , the spray device 4 sprays reactants, the first heating element 31 heats the first reaction zone 12 to a first preset temperature, and the reactants are deposited on the surface of the drift layer to form a polarization layer.

[0053] This transistor processing technology realizes the growth of the drift layer and the polarization layer in one reactor without replacing the reaction chamber 11. The mobility of the two-dimensional electron gas is higher, the voltage resistance is better, and the product quality is improved.

[0054] In step S2, a SiC drift layer is used as the drift layer. The carrier 21 holding the substrate is moved to the second reaction zone 13. The distance between the carrier 21 and the spray device 4 is 180 mm. The second reaction zone 13 is heated to 1650°C, which is the optimal temperature for forming a SiC drift layer. The spray device 4 sprays reactants, forming a 50 μm thick SiC drift layer on the substrate surface. In other embodiments, the drift layer can also be made of GaO or SiN.

[0055] In step S3, the polarization layer includes a buffer layer, a channel layer, a barrier layer, and a cap layer in the direction away from the drift layer. In step S3, the buffer layer, channel layer, barrier layer, and cap layer are sequentially formed. In this embodiment, the buffer layer is an AlN buffer layer, the channel layer is a GaN channel layer, the barrier layer is an AlGaN barrier layer, and the cap layer is a GaN cap layer. During processing, the carrier 21 rises and moves to the first reaction zone 12. At this time, the distance between the carrier 21 and the spray device 4 is 60mm. The first reaction zone 12 is heated to 1300°C, which is the optimal condition for the formation of the polarization layer. The spray device 4 sprays reactants to grow an AlN buffer layer on the surface of the drift layer. The AlN buffer layer has a thickness of approximately 50nm. A 300nm GaN channel layer is grown on the surface of the AlN buffer layer. A 20nm AlGaN barrier layer with an Al component of 25% is grown on the surface of the GaN channel layer. Finally, a 5nm GaN cap layer is grown on the surface of the AlGaN barrier layer. In other embodiments, the polarization layer may also be nitride such as InN or AlN.

[0056] Preferably, the spray device 4 includes a plurality of first gas channels 43 and a plurality of second gas channels 44. The first gas channels 43 and the second gas channels 44 respectively spray different reaction gases toward the carrier 21. The second gas channels 44 are arranged around the first gas channels 43, and the diameter of the second gas channels 44 is adjustable. The diameter of the second gas channels 44 in step S2 is smaller than the diameter of the second gas channels 44 in step S3. In this embodiment, in step S2, the diameter of the second gas channels 44 is 1 mm, which increases the gas flow velocity of the reaction gases in the second gas channels 44 to ensure that the mixing point of the reaction gases is located in the second reaction zone 13. In step S3, the diameter of the second gas channels 44 is 2 mm, which reduces the gas flow velocity of the reaction gases in the second gas channels 44 to ensure that the mixing point of the reaction gases is located in the first reaction zone 12, thereby improving the processing quality of the transistor.

[0057] Note that the above are merely preferred embodiments of the present invention and the technical principles employed. Those skilled in the art will appreciate that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments, and substitutions are possible for those skilled in the art without departing from the scope of protection of the present invention. Therefore, while the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments and may include many other equivalent embodiments without departing from the scope of the present invention. The scope of the present invention is determined by the scope of the appended claims.

Claims

1. A reactor, characterized in that include: A housing (1) provided with a reaction chamber (11); A lifting device (2) comprising a lifting drive and a carrier plate (21), wherein the lifting drive is disposed at the bottom of the reaction chamber (11), and the lifting drive is driven and connected to the carrier plate (21) so as to enable the carrier plate (21) to move upward and downward between the first reaction zone (12) and the second reaction zone (13); A heating device (3), comprising a first heating element (31) and a second heating element (32), wherein the first heating element (31) is used to heat the first reaction zone (12) to a first preset temperature; and the second heating element (32) is used to heat the second reaction zone (13) to a second preset temperature; the first reaction zone (12) is higher than the second reaction zone (13), and the first preset temperature is lower than the second preset temperature; A spray device (4) is arranged at the top of the reaction chamber (11), and the spray device (4) is used for spraying reactants.

2. The reactor according to claim 1, characterized in that The spray device (4) comprises a spray head (41), a plurality of vents are evenly arranged on the spray head (41), a pipeline (42) is arranged in the vent, a first gas channel (43) is formed between the pipeline (42) and the inner wall of the vent, and a second gas channel (44) is provided in the pipeline (42), the first gas channel (43) is used to spray a first reaction gas, and the second gas channel (44) is used to spray a second reaction gas.

3. The reactor according to claim 2, characterized in that The diameter of the pipeline (42) is adjustable to adjust the ratio of the cross-sectional areas of the first gas channel (43) and the second gas channel (44).

4. The reactor according to claim 3, characterized in that The diameter of the second gas channel (44) is D, the distance between the carrier plate (21) and the spray device (4) is A, and the ratio of D to A is in the range of 0.001-0.

05.

5. The reactor according to claim 1, characterized in that The lifting drive component is a lifting motor or a hydraulic cylinder.

6. The reactor according to claim 1, characterized in that The first heating element (31) and the second heating element (32) are both heated by induction coils.

7. The reactor according to claim 1, characterized in that The heating temperature of the first heating element (31) ranges from 1000°C to 1300°C; and / or The heating temperature range of the second heating element (32) is 1300°C-1650°C.

8. The reactor according to any one of claims 1 to 7, characterized in that When the carrier plate (21) is located in the first reaction zone (12), the distance between the carrier plate (21) and the spray device (4) is 30 mm to 80 mm; and / or When the carrier plate (21) is located in the second reaction zone (13), the distance between the carrier plate (21) and the spray device (4) is 150 mm to 200 mm.

9. A semiconductor material growth device, characterized in that: The method comprises the reactor according to any one of claims 1 to 8.

Images