Vapor deposition equipment for thin film preparation

Abstract

The utility model relates to the technical field of thin film preparation, in particular to vapor deposition equipment for thin film preparation, which comprises a vacuum chamber, a deposition chamber is arranged at the top end of the vacuum chamber, a deposition mechanism is arranged in the deposition chamber, and a water cooling mechanism is arranged in the vacuum chamber. And the deposition condition can be observed through the boron glass observation window arranged in the middle of the top sealing cover, and compared with a traditional shielding type sealing mode, the design can bring convenience to experimenters to visually understand the experiment process. Through a water inlet pipe, a water outlet pipe, a temperature probe and a temperature sensor which are arranged on the water cooling mechanism, the temperature change of the evaporation conductor can be observed in real time, and because the evaporation conductor also has a melting point, the temperature of the evaporation conductor needs to be controlled to prevent the evaporation conductor from reaching the melting point to damage equipment; and the water valve is opened for water cooling, so that the evaporation conductor is cooled.

Description

Technical Field

[0001] The utility model relates to the technical field of thin film preparation, in particular to a vapor deposition device for thin film preparation. Background Art

[0002] Chemical vapor deposition (CVD) is a chemical technology that primarily utilizes one or more vapor-phase compounds or elements containing the thin film element to chemically react on a substrate surface to form a thin film. CVD is a new technology for preparing inorganic materials developed in recent decades. CVD has been widely used to purify substances, develop new crystals, and deposit a variety of single-crystal, polycrystalline, or glassy inorganic thin film materials. These materials can be oxides, sulfides, nitrides, carbides, or binary or multi-element compounds within Groups III-V, II-IV, and IV-VI. Their physical functions can be precisely controlled through the vapor-phase doping deposition process. CVD has become a new field in inorganic synthetic chemistry.

[0003] For example, a gas component of a vapor deposition device and a vapor deposition device disclosed in the authorization announcement number CN218756027U. The gas component of the vapor deposition device of the utility model includes: a first chamber, a carrier gas chamber and a second chamber. The first gas inlet is arranged at the top of the first chamber, and a sieve plate is arranged in the first chamber, which can help the second and / or third group source gases that are not easy to diffuse to be evenly distributed in the first chamber. At the same time, the aperture of the sieve holes at the edge of the sieve plate is larger than the aperture of the central sieve hole, which can further help the uniform diffusion of the second and / or third group source gases; the carrier gas inlet and the second gas inlet are respectively annular openings arranged on the upper part of the side walls of the carrier gas chamber and the second chamber, which can allow the carrier gas and the fourth, fifth and sixth group source gases entering the second chamber to enter the chamber evenly from all sides of their respective gas chambers, thereby improving the uniformity of the gas in the chamber. However, this utility model lacks temperature control measures for the evaporation equipment, which is not convenient for ensuring the integrity of the evaporation boat that supports the evaporation material during the evaporation process. When the temperature is too high, the evaporation boat may melt and cause damage to the equipment. For this reason, we propose a vapor deposition equipment for thin film preparation, which solves the temperature control problem of the evaporation boat of this utility model and improves the practical effect of this utility model. Utility Model Content

[0004] The purpose of the present invention is to provide a vapor deposition device for thin film preparation to solve the problems raised in the above background technology.

[0005] To achieve the above objectives, the present invention provides the following technical solutions:

[0006] A vapor deposition apparatus for thin film preparation, comprising a vacuum chamber, a deposition chamber disposed at the top of the vacuum chamber, a deposition mechanism disposed within the deposition chamber, a water cooling mechanism disposed within the vacuum chamber, and the vacuum chamber being in communication with the deposition chamber;

[0007] The deposition mechanism includes an evaporation conductor, an evaporation boat is fixedly installed on the upper part of the evaporation conductor, the evaporation conductor is connected to the water cooling mechanism, a top sealing cover is provided on the top of the deposition chamber, and a boron glass observation window is provided in the middle of the top sealing cover;

[0008] The water cooling mechanism includes a water inlet pipe and a water outlet pipe. The water inlet pipe and the water outlet pipe are connected to each other. The tops of the water inlet pipe and the water outlet pipe are fixedly connected to the evaporation conductor. The water inlet pipe is provided with a water valve.

[0009] Preferably, the deposition mechanism further includes a crystal oscillator, and the crystal oscillator is arranged inside the deposition chamber.

[0010] Preferably, a temperature measuring probe is fixedly connected to one side of the evaporation conductor, and one end of the temperature measuring probe is electrically connected to a temperature sensor.

[0011] Preferably, a vacuum connection pipe is fixedly provided on one side of the vacuum chamber, a connection flange is provided at one end of the vacuum connection pipe, and the connection flange is fixedly connected to an external vacuum pump.

[0012] Preferably, a bottom sealing cover is fixedly connected to the bottom end of the vacuum chamber, and a first sealing ring is provided between the vacuum chamber and the bottom sealing cover.

[0013] Preferably, a second sealing ring is provided between the vacuum chamber and the deposition chamber, and a third sealing ring is provided between the deposition chamber and the top sealing cover.

[0014] Preferably, the water inlet pipe, the water outlet pipe and the evaporation conductor are all made of copper, and the evaporation boat is made of tungsten, tantalum or graphite.

[0015] Compared with the prior art, the beneficial effects of the present invention are:

[0016] 1. This thin film preparation vapor deposition equipment has a top sealed cover set at the top of the deposition chamber. When the vapor deposition operation is in progress, the deposition situation can be observed through a borosilicate glass observation window set in the middle of the top sealed cover. Compared with the traditional shielding sealing method, this design can facilitate the experimenter's intuitive understanding of the experimental process.

[0017] 2. This vapor deposition equipment for thin film preparation can observe the temperature changes of the evaporating conductor in real time through the water inlet pipe, water outlet pipe, temperature probe and temperature sensor set by the water cooling mechanism. Since the evaporating conductor also has a melting point, it is necessary to control the temperature of the evaporating conductor itself to prevent it from reaching the melting point and damaging the equipment. When the evaporating conductor reaches the critical melting point temperature, the water valve is opened to cool the evaporating conductor with water, so that the evaporating conductor can be cooled. In actual use, this water cooling method is simple in design, easy to operate and highly practical. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram of the overall structure of the utility model;

[0019] Figure 2 This is a front view structural diagram of the utility model;

[0020] Figure 3 This is a schematic diagram of the partial structure of the water cooling mechanism of the utility model;

[0021] Figure 4 It is a schematic diagram of the partial structure of the deposition mechanism of the present utility model.

[0022] In the figure: 100, vacuum chamber; 101, deposition chamber; 102, vacuum connection pipe; 103, connecting flange; 104, bottom sealing cover; 105, first sealing ring; 106, second sealing ring; 107, third sealing ring; 200, evaporation conductor; 201, evaporation boat; 202, top sealing cover; 203, borosilicate glass observation window; 204, crystal oscillator; 300, water inlet pipe; 301, water outlet pipe; 302, water valve; 303, temperature probe; 304, temperature sensor. DETAILED DESCRIPTION

[0023] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0024] See also Figures 1-4 As shown, the utility model provides a technical solution:

[0025] A vapor deposition apparatus for thin film preparation includes a vacuum chamber 100, a deposition chamber 101 disposed at the top of the vacuum chamber 100, a deposition mechanism disposed within the deposition chamber 101, a water cooling mechanism disposed within the vacuum chamber 100, and the vacuum chamber 100 is in communication with the deposition chamber 101;

[0026] The deposition mechanism includes an evaporation conductor 200, an evaporation boat 201 is fixedly mounted on the upper portion of the evaporation conductor 200, and the evaporation conductor 200 is interconnected with a water cooling mechanism. A top sealing cover 202 is provided at the top of the deposition chamber 101, and a boron glass observation window 203 is provided in the middle of the top sealing cover 202;

[0027] The water cooling mechanism includes a water inlet pipe 300 and a water outlet pipe 301 . The water inlet pipe 300 and the water outlet pipe 301 are connected to each other. The tops of the water inlet pipe 300 and the water outlet pipe 301 are fixedly connected to the evaporation conductor 200 . The water inlet pipe 300 is provided with a water valve 302 .

[0028] In this embodiment, preferably, the deposition mechanism further includes a crystal oscillator 204 , and the crystal oscillator 204 is disposed inside the deposition chamber 101 .

[0029] In this embodiment, preferably, a temperature measuring needle 303 is fixedly connected to one side of the evaporation conductor 200 , and one end of the temperature measuring needle 303 is electrically connected to a temperature sensor 304 .

[0030] In this embodiment, preferably, a vacuum connection pipe 102 is fixedly provided on one side of the vacuum chamber 100 , and a connection flange 103 is provided at one end of the vacuum connection pipe 102 , and the connection flange 103 is fixedly connected to an external vacuum pump.

[0031] In this embodiment, preferably, a bottom sealing cover 104 is fixedly connected to the bottom end of the vacuum chamber 100 , and a first sealing ring 105 is provided between the vacuum chamber 100 and the bottom sealing cover 104 .

[0032] In this embodiment, preferably, a second sealing ring 106 is provided between the vacuum chamber 100 and the deposition chamber 101 , and a third sealing ring 107 is provided between the deposition chamber 101 and the top sealing cover.

[0033] In this embodiment, preferably, the water inlet pipe 300 , the water outlet pipe 301 and the evaporation conductor 200 are all made of copper, and the evaporation boat 201 is made of tungsten, tantalum or graphite.

[0034] During use, the vapor deposition apparatus for thin film deposition of this embodiment utilizes a top sealing cover 202 disposed at the top of the deposition chamber 101. During vapor deposition, the deposition process can be observed through a borosilicate glass observation window 203 located in the middle of the top sealing cover 202. Compared to conventional shielded sealing methods, this design facilitates intuitive observation of the experimental process by the experimenter. The water cooling mechanism, comprising a water inlet pipe 300, a water outlet pipe 301, a temperature probe, and a temperature sensor 304, allows for real-time observation of the temperature changes of the evaporated conductor 200. Because the evaporated conductor 200 also has a melting point, the temperature of the evaporated conductor 200 must be controlled to prevent it from reaching its melting point and damaging the apparatus. When the evaporated conductor 200 reaches the critical melting point, the water valve 302 is opened to cool the evaporated conductor 200. In actual use, this water cooling method is simple in design, easy to operate, and highly practical.

[0035] The above shows and describes the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are merely preferred examples of the present invention and are not intended to limit the present invention. Various changes and improvements may be made to the present invention without departing from the spirit and scope of the present invention, and such changes and improvements fall within the scope of the present invention. The scope of protection claimed in the present invention is defined by the appended claims and their equivalents.

Claims

1. A vapor deposition apparatus for thin film preparation, comprising a vacuum chamber (100), characterized in that: A deposition chamber (101) is provided at the top of the vacuum chamber (100), a deposition mechanism is provided inside the deposition chamber (101), a water cooling mechanism is provided inside the vacuum chamber (100), and the vacuum chamber (100) is in communication with the deposition chamber (101); The deposition mechanism comprises an evaporation conductor (200), an evaporation boat (201) is fixedly mounted on the upper portion of the evaporation conductor (200), the evaporation conductor (200) is connected to a water cooling mechanism, a top sealing cover (202) is provided at the top of the deposition chamber (101), and a boron glass observation window (203) is provided in the middle portion of the top sealing cover (202); The water cooling mechanism comprises a water inlet pipe (300) and a water outlet pipe (301); the water inlet pipe (300) and the water outlet pipe (301) are connected to each other; the tops of the water inlet pipe (300) and the water outlet pipe (301) are fixedly connected to the evaporation conductor (200); and the water inlet pipe (300) is provided with a water valve (302).

2. The vapor deposition apparatus for thin film preparation according to claim 1, characterized in that: The deposition mechanism further comprises a crystal oscillator (204), and the crystal oscillator (204) is arranged inside the deposition chamber (101).

3. The vapor deposition apparatus for thin film preparation according to claim 1, characterized in that: A temperature measuring needle (303) is fixedly connected to one side of the evaporation conductor (200), and one end of the temperature measuring needle (303) is electrically connected to a temperature sensor (304).

4. The vapor deposition apparatus for thin film preparation according to claim 1, characterized in that: A vacuum connection pipe (102) is fixedly provided on one side of the vacuum chamber (100), a connection flange (103) is provided at one end of the vacuum connection pipe (102), and the connection flange (103) is fixedly connected to an external vacuum pump.

5. The vapor deposition apparatus for thin film preparation according to claim 4, characterized in that: The bottom end of the vacuum chamber (100) is fixedly connected to a bottom sealing cover (104), and a first sealing ring (105) is provided between the vacuum chamber (100) and the bottom sealing cover (104).

6. The vapor deposition apparatus for thin film preparation according to claim 1, characterized in that: A second sealing ring (106) is provided between the vacuum chamber (100) and the deposition chamber (101), and a third sealing ring (107) is provided between the deposition chamber (101) and the top sealing cover.

7. The vapor deposition apparatus for thin film preparation according to claim 1, characterized in that: The water inlet pipe (300), the water outlet pipe (301) and the evaporation conductor (200) are all made of copper, and the evaporation boat (201) is made of tungsten, tantalum or graphite.

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