Device structure including silicon interior die and device structure including interposer

By introducing a metallic shielding structure into the silicon-connected wired die, the problem of signal fidelity deterioration caused by electromagnetic coupling in high-frequency signal transmission is solved, the signal miscellaneous ratio is improved, and the stability of signal transmission is enhanced.

CN223308990UActive Publication Date: 2025-09-05TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
CN202421696558.3
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Priority Date
2023-08-16
Filing Date
2024-07-17
Publication Date
2025-09-05
Estimated Expiration
2034-07-17

AI Technical Summary

Technical Problem

In high-frequency signal transmission, electromagnetic coupling between adjacent substrate perforated structures of the wired die in silicon leads to deterioration of signal fidelity and reduces the signal miscellaneous ratio.

Method used

The metallic shielding structure is used to reduce electromagnetic coupling between adjacent substrate perforated structures in the silicon inner wire die, and the front metallic shielding layer and the back side metallic shielding layer are formed on the silicon substrate, and combined with the insulating spacer layer, the substrate perforated structure is formed to enhance the signal transmission ratio.

Benefits of technology

It effectively reduces the electromagnetic coupling between the perforated structures of adjacent substrates, improves the messaging ratio of the silicon-connected die, and improves the fidelity of high-frequency signal transmission.

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Abstract

The utility model provides a device structure comprising a silicon interconnect die and a device structure comprising an interposer, the silicon interconnect die comprising: a through substrate via (TSV) structure extending through a silicon substrate; an insulating spacer layer including a horizontally extending portion overlying a top surface of the silicon substrate and a plurality of tubular insulating material portions laterally surrounding a respective one of the TSV structures; and a front metallic shielding layer including a horizontally extending metallic shielding portion and at least one tubular metallic shielding portion laterally surrounding a respective one of the plurality of tubular insulating material portions.
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