Grid line structure, back contact solar cell and photovoltaic module

Abstract

The utility model relates to a grid line structure, a back contact solar cell and a photovoltaic module, the grid line structure is arranged on a substrate, and the grid line structure comprises first-polarity fine grid lines and second-polarity fine grid lines which continuously extend along a first direction and are alternately arranged at intervals in a second direction, the conductive parts of the first polarity and the conductive parts of the second polarity continuously extend in the second direction and are alternately arranged in the first direction at intervals; the first polarity is opposite to the second polarity, and the first direction is perpendicular to the second direction; wherein the thin grid lines are respectively overlapped with orthographic projection parts of the plurality of conductive parts on the substrate, the thin grid lines with different polarities and the conductive parts, which are positioned at projection overlapping positions, are insulated from each other, and the thin grid lines with the same polarity and the conductive parts, which are positioned at the projection overlapping positions, are electrically connected with each other. The thin grid lines are continuous thin grids, so that negative effects on filling factors of the solar cell can be avoided.

Description

Technical Field

[0001] The present application relates to the technical field of grid line structures of solar cells, and in particular to grid line structures, back-contact solar cells and photovoltaic modules. Background Art

[0002] In the field of solar cell technology, a common grid line structure is that thin grids of different polarities need to be disconnected at the contact points with the main grid or welding ribbon, which has a negative impact on the fill factor of the solar cell. Summary of the Invention

[0003] Based on this, it is necessary to provide a grid line structure, a back contact solar cell and a photovoltaic module that can prevent fine grids of different polarities from being disconnected from the main grid or welding ribbon in order to address the above technical problems.

[0004] In a first aspect, the present application provides a gate line structure, the gate line structure being provided on a substrate, the gate line structure comprising fine gate lines of a first polarity and a second polarity extending continuously along a first direction and alternately spaced in a second direction, and conductive members of the first polarity and the second polarity extending continuously along the second direction and alternately spaced in the first direction; the first polarity is opposite to the second polarity, and the first direction is perpendicular to the second direction;

[0005] The fine grid lines respectively overlap with the orthographic projections of the plurality of conductive elements on the substrate, the fine grid lines of different polarities and the conductive elements at the overlapping projections are insulated from each other, and the fine grid lines of the same polarity and the conductive elements at the overlapping projections are electrically connected.

[0006] In one embodiment, the gate line structure further includes an insulating dielectric layer, and the insulating dielectric layer is provided between the fine gate lines of different polarities and the conductive member to insulate the fine gate lines of different polarities and the conductive member from each other.

[0007] In one embodiment, the conductive member includes a soldering ribbon.

[0008] In one embodiment, the first groove and the second groove are provided on one side of the soldering strip of the first polarity and the second polarity facing the fine grid line, the insulating dielectric layer and the substrate; the first groove in the soldering strip of the first polarity corresponds to the fine grid line of the first polarity; the first groove in the soldering strip of the second polarity corresponds to the fine grid line of the second polarity, and the second groove corresponds to the insulating dielectric layer.

[0009] In one embodiment, the difference between the depth of the first groove and the thickness of the corresponding fine gate line is within a preset range, the dimensions of the first groove and the second groove in the first direction are less than or equal to the dimension of the insulating dielectric layer in the first direction; the difference between the depth of the second groove and the first thickness is within a preset range; the first thickness is the sum of the thicknesses of the corresponding fine gate line and the insulating dielectric layer.

[0010] In one embodiment, the conductive member includes a stacked solder strip and a main grid line, and the main grid line is provided between the solder strip and the corresponding fine grid line, the insulating dielectric layer and the substrate.

[0011] In one embodiment, a third groove is provided on a side of the soldering strip facing the main grid line; the third groove corresponds to a position where the orthographic projections of the thin grid lines of different polarities and the main grid line on the substrate overlap.

[0012] In one embodiment, the size of the third groove in the first direction is less than or equal to the size of the insulating dielectric layer in the first direction, and the difference between the depth of the third groove and the protrusion thickness is within a preset range; the protrusion thickness is the thickness difference between the position where the insulating dielectric layer is set and the position where the insulating dielectric layer is not set in the main gate line.

[0013] In one embodiment, a fourth groove is provided on a side of the conductive member facing the fine gate line and the substrate, and the fourth groove is used to correspond to the overlapping position of the projections between the fine gate lines of different polarities and the conductive member; the depth of the fourth groove is greater than the thickness of the fine gate line, and the size of the fourth groove in the second direction is greater than the size of the fine gate line in the second direction.

[0014] In a second aspect, the present application provides a back-contact solar cell comprising the grid line structure as described above.

[0015] In a third aspect, the present application provides a photovoltaic module comprising at least one cell string, wherein the cell string comprises at least two solar cells; at least one of the solar cells is the above-mentioned back-contact solar cell, or at least one of the solar cells comprises the above-mentioned grid line structure.

[0016] The above-mentioned grid line structure, back contact solar cell and photovoltaic module, the grid line structure is arranged on the substrate, the grid line structure includes fine grid lines of the first polarity and the second polarity that extend continuously along the first direction and are alternately spaced in the second direction, and the conductive members of the first polarity and the second polarity that extend continuously along the second direction and are alternately spaced in the first direction; the first polarity is opposite to the second polarity, and the first direction is perpendicular to the second direction; wherein the fine grid lines respectively overlap with the positive projections of multiple conductive members on the substrate, the fine grid lines of different polarities and the conductive members located at the overlapping projections are insulated from each other, and the fine grid lines of the same polarity and the conductive members located at the overlapping projections are electrically connected. The fine grid lines in the present application are all continuous fine grids, which can avoid negative impacts on the fill factor of the solar cell. In addition, since the fine grid lines are continuously arranged, when increasing the number of conductive members or changing the position of the conductive members, there is no need to consider the position of the fine grid lines. It is only necessary to ensure that the fine grid lines of different polarities and the conductive members are insulated from each other, thereby improving the flexibility of the conductive member arrangement. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following briefly introduces the drawings required for use in the embodiments of the present application or related technical descriptions. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying any creative work.

[0018] Figure 1 This is one of the structural schematic diagrams of a welding strip of the first polarity in one embodiment of the present application;

[0019] Figure 2 This is a second structural diagram of a welding strip of the first polarity in one embodiment of the present application;

[0020] Figure 3 This is a second structural diagram of the gate line structure in one embodiment of the present application;

[0021] Figure 4 This is a third structural diagram of the gate line structure in one embodiment of the present application;

[0022] Figure 5 This is the third structural schematic diagram of the welding strip of the first polarity in one embodiment of the present application. DETAILED DESCRIPTION

[0023] To make the above-mentioned objects, features, and advantages of the present application more clearly understood, the specific embodiments of the present application are described in detail below with reference to the accompanying drawings. The following description sets forth many specific details to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways than those described herein, and those skilled in the art can make similar improvements without violating the scope of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0024] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0025] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. Throughout the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0026] In this application, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two elements or interaction between two elements, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in this application based on specific circumstances.

[0027] The current mainstream busbar and string welding method for full back electrode cells in solar cells requires that the fine grid lines of different polarities be disconnected at the busbar. Therefore, the position and number of the busbars need to be coordinated with the fine grid line design. Therefore, changes in the position and number of the busbars will require changes in the fine grid line design, which greatly limits the flexibility of the busbar design. In order to reduce edge collapse, the battery edge or welding strip busbar needs to be a certain distance away from the battery edge, resulting in high complexity of the fine grid lines at the battery edge of the back junction battery and prone to leakage. The design of disconnecting fine grid lines of different polarities at the busbar position will have a negative impact on the filling of batteries and components. The more busbars there are, the more obvious the negative impact is, which restricts the introduction of multi-busbar and busbar-free designs.

[0028] In one embodiment, see the attached Figure 1 , attached Figure 1 One of the structural schematic diagrams of the gate line structure in an embodiment of the present application is shown, and the gate line structure in this embodiment is arranged on a substrate 210. The gate line structure includes fine gate lines 110 of a first polarity and fine gate lines 120 of a second polarity that extend continuously along a first direction and are alternately spaced in a second direction, and conductive members 130 of a first polarity and conductive members 140 of a second polarity that extend continuously along a second direction and are alternately spaced in the first direction; the first polarity is opposite to the second polarity, and the first direction is perpendicular to the second direction; wherein the fine gate lines respectively overlap with the orthographic projections of multiple conductive members on the substrate 210, the fine gate lines and conductive members of different polarities located at the overlapping projections are insulated from each other, and the fine gate lines and conductive members of the same polarity located at the overlapping projections are electrically connected.

[0029] The above-mentioned substrate 210 can be other structures in the solar cell except the grid line structure. The conductive member can be a main grid line and a welding strip, or it can be a welding strip. The welding strip refers to a component that can transmit the electric energy output by the solar cell. When the conductive member is only a welding strip, the grid line structure in this embodiment is a main grid line-free structure, and the electric energy transmitted by the fine grid line is transmitted to the outside through the welding strip of the first polarity and the welding strip of the second polarity. When the conductive member includes a main grid line and a welding strip, the main grid line is respectively arranged on the surface of the substrate 210 and the fine grid line, and the welding strip is arranged on the surface of the main grid line, and the welding strip is electrically connected to the main grid line to transmit the electric energy to the outside.

[0030] In addition, when preparing the gate line structure in this embodiment, the following steps may be included: Step 1, depositing the fine gate lines 120 of the first polarity and the second polarity on the surface of the substrate 210 in sequence, wherein the fine gate lines 120 of the first polarity and the second polarity extend continuously along the first direction, and the fine gate lines 110 of the first polarity and the fine gate lines 120 of the second polarity are alternately spaced in the second direction. Insulation treatment is performed on the target positions of the fine gate lines 110 of the first polarity and the fine gate lines 120 of the second polarity. The target position corresponds to the position where the orthographic projections of the fine gate lines of different polarities and the conductive member on the substrate 210 overlap. For example, the attached Figure 1 The figure shows the case where an insulating dielectric layer 150 is deposited at the target position for insulation treatment. By setting the insulating dielectric layer 150 at the target position of the fine grid line, it is possible to ensure that the fine grid lines and the conductive parts of different polarities are insulated from each other. As another example, without setting the insulating dielectric layer 150, a groove can be set at the target position of the side of the conductive part facing the fine grid line and the substrate. By setting the size of the groove to be larger than the size of the fine grid line, the conductive part is physically isolated from the fine grid line, thereby achieving insulation. Not limited to this. Since the fine grid line in this embodiment does not need to be disconnected, the difficulty of preparation is reduced and the efficiency of preparation is improved.

[0031] The grid line structure in this embodiment includes continuous fine grid lines, which respectively overlap with the orthographic projections of multiple conductive members on the substrate 210. The fine grid lines and conductive members of different polarities located at the overlapping projections are insulated from each other, and the fine grid lines and conductive members of the same polarity located at the overlapping projections are electrically connected, thereby avoiding the disconnection of the fine grid lines and the negative impact on the fill factor of the solar cell. In addition, since the fine grid lines are arranged continuously, when increasing the number of conductive members or changing the position of the conductive members, there is no need to consider the position of the fine grid lines. It is only necessary to ensure that the fine grid lines and conductive members of different polarities are insulated from each other, thereby improving the flexibility of the conductive member arrangement.

[0032] In one embodiment, see the attached Figure 1 The gate line structure in this embodiment further includes an insulating dielectric layer 150, which is provided between the fine gate lines of different polarities and the conductive members so that the fine gate lines of different polarities and the conductive members (i.e., the attached Figure 1 The thin gate lines 110 of the first polarity and the conductive members 140 of the second polarity, as well as the thin gate lines 120 of the second polarity and the conductive members 130 of the first polarity, are insulated from each other.

[0033] The size of the insulating dielectric layer 150 in the first direction may be greater than or equal to the size of the thin gate lines in the first direction, thereby ensuring stable insulation between the thin gate lines of different polarities and the conductive members.

[0034] In this embodiment, by providing an insulating dielectric layer 150 between fine grid lines of different polarities and the conductive elements, effective and stable insulation conditions are provided, ensuring mutual insulation between the fine grid lines of different polarities and the conductive elements, thereby preventing leakage in the solar cell. In this case, when the number and position of the conductive elements need to be changed, only the position and pattern of the insulating dielectric layer 150 and the conductive elements need to be adjusted, without having to re-set the fine grid line pattern. This increases the design flexibility of the grid line structure and reduces the cost of change.

[0035] In one embodiment, the conductive member comprises a solder ribbon.

[0036] In this embodiment, the conductive member is configured as a welding strip, which can form a grid line structure without a main grid. Since the fine grid lines will not be disconnected in the welding strip, it is possible to avoid the negative impact of the disconnection of the fine grid lines on the fill factor of the solar cell. Therefore, even if the grid line structure is configured as a grid line structure without a main grid, the transmission of electrical energy through the welding strip will not affect the photoelectric conversion efficiency of the solar cell. Specifically, a welding strip of a first polarity and a welding strip of a second polarity can be provided, so that the grid line structure in this embodiment can further transmit the electrical energy transmitted by the fine grid lines to the outside through the welding strips of the first polarity and the second polarity, respectively.

[0037] In one embodiment, see the attached Figure 2 , attached Figure 2 A cross-sectional view of a first-polarity soldering ribbon 131 in one embodiment of the present application is shown, wherein the second-polarity soldering ribbon has the same structure as the first-polarity soldering ribbon. Both the first-polarity and second-polarity soldering ribbons have first and second grooves on the sides facing the fine grid lines, the insulating dielectric layer, and the substrate. The first grooves 1311 in the first-polarity soldering ribbon 131 correspond to the first-polarity fine grid lines; the first grooves in the second-polarity soldering ribbon correspond to the second-polarity fine grid lines, and the second grooves in both the first-polarity and second-polarity soldering ribbons correspond to the insulating dielectric layer.

[0038] In this embodiment, the Figure 2 Taking the first polarity solder strip 131 as an example, the first groove 1311 is used to fit the first polarity fine grid lines, so the first groove 1311 in the first polarity solder strip 131 corresponds to the first polarity fine grid lines. The second groove 1312 is used to fit the fine grid lines and the insulating dielectric layer, so the second groove in the second polarity solder strip corresponds to the insulating dielectric layer. This can achieve self-alignment between the solder strip and the fine grid lines in the second direction, reduce solder strip failure due to sliding in the second direction, improve welding yield, and further ensure the stability of the grid line structure.

[0039] In one embodiment, the difference between the depth of the first groove and the thickness of the corresponding fine gate line is within a preset range, and the dimensions of the first groove and the second groove in the first direction are less than or equal to the dimensions of the insulating dielectric layer in the first direction; the difference between the depth of the second groove and the first thickness is within a preset range; and the first thickness is the sum of the thicknesses of the corresponding fine gate line and the insulating dielectric layer.

[0040] The thickness of the insulating dielectric layer refers to the dimension in the deposition direction of the insulating dielectric layer, that is, the dimension in the direction perpendicular to the fine gate lines.

[0041] In this embodiment, the difference between the depth of the first groove and the thickness of the corresponding fine grid line is within a preset range, which can be understood as the depth of the first groove being almost the same as the thickness of the fine grid line, so that a stable electrical connection can be established between the welding strip and the fine grid line of the same polarity. Since the grid line structure in this embodiment is arranged in the insulating dielectric layer, the insulating dielectric layer can ensure the insulation between the fine grid lines and the welding strips of different polarities. Therefore, when setting the dimensions of the first groove and the second groove, there is no need to consider insulation through physical isolation. The difference between the depth of the second groove and the first thickness is within a preset range, which can be understood as the depth of the second groove being almost the same as the thickness of the fine grid line and the insulating dielectric layer, avoiding the gap between the welding strip and the fine grid line / insulating dielectric layer due to excessive groove depth, which is easily damaged under the influence of external force, thereby ensuring the stability of the grid line structure. In addition, setting the dimensions of the first groove and the second groove in the first direction to be less than or equal to the dimensions of the insulating dielectric layer in the first direction can ensure that the insulating dielectric layer can separate the welding strip and the fine grid line of different polarities, thereby ensuring insulation between the two.

[0042] In one embodiment, see the attached Figure 3 and attached Figure 4 , attached Figure 3 The second schematic diagram of the structure of the gate line structure in an embodiment of the present application is shown. Figure 4 The third schematic diagram of the structure of the grid line structure in an embodiment of the present application is shown. In order to more clearly illustrate the grid line structure in this embodiment, the color version and the black and white version of the grid line structure schematic diagram are shown in this embodiment respectively. Figure 3 A color diagram of the grid line structure is attached. Figure 4 It is a black and white schematic diagram of the grid line structure. Figure 3 and attached Figure 4 FIG. (1) shows a gate line structure when the main gate line 142 of the second polarity is provided on the substrate 210, the fine gate lines (including the fine gate lines 110 of the first polarity and the fine gate lines 120 of the second polarity) and the surface of the insulating dielectric layer 150. Figure 3 and attached Figure 4Figure (2) shows the grid line structure when the second polarity welding strip 141 covers the second polarity main grid line 142. The conductive member in this embodiment includes a stacked welding strip and a main grid line, and the main grid line is provided between the welding strip and the corresponding fine grid line, the insulating dielectric layer 150 and the substrate 210.

[0043] There are two situations in which the busbars are arranged between the welding strips and the corresponding fine grid lines, the insulating dielectric layer 150, and the substrate 210. First, the busbars of the first polarity are arranged between the welding strips of the first polarity and the fine grid lines of the first polarity, the fine grid lines of the second polarity, the insulating dielectric layer 150, and the substrate 210. Second, the busbars of the second polarity 142 are arranged between the welding strips of the second polarity 141 and the fine grid lines of the first polarity 110, the fine grid lines of the second polarity 120, the insulating dielectric layer 150, and the substrate 210. The fine grid lines and welding strips of the first polarity and the second polarity have the same features except for the different polarities. In this embodiment, the main grid line 142 of the second polarity and the welding strip 141 of the second polarity are used as examples. The main grid line 142 of the second polarity is deposited on the insulating dielectric layer 150 on the surface of the substrate 210, the second polarity fine grid 120 and the first polarity fine grid 110. The welding strip 141 of the second polarity is arranged on the surface of the main grid line 142 of the second polarity, and is used to further transmit the electrical energy transmitted by the main grid line 142 of the second polarity and the fine grid line 120 of the second polarity to the outside.

[0044] In addition, the welding strip can also be used to optimize the grid line structure and improve the stability and service life of the grid line structure. For example, due to the setting of the insulating dielectric layer 150, when depositing the main grid line 142 of the second polarity, the position where the insulating dielectric layer 150 is deposited may have a bulge relative to the position where the insulating dielectric layer 150 is not deposited. Therefore, when setting the welding strip 141 of the second polarity, a groove can be set on the side facing the main grid line 142 of the second polarity. The groove is used to balance the height difference caused by the uneven deposition of the insulating dielectric layer 150 or the main grid line 142 of the second polarity, ensuring that the welding strip 142 of the second polarity is tightly fitted with the second polarity main grid 142. In addition, it is ensured that the surface of the entire grid line structure is horizontal, which is conducive to the subsequent preparation of other functional film layers and improves the stability of the entire solar cell structure.

[0045] In one embodiment, see the attached Figure 5 , attached Figure 5 The third structural diagram of the first polarity welding strip 131 in one embodiment of the present application is shown, wherein the structure of the second polarity welding strip is the same as that of the first polarity welding strip. Figure 5 The third groove 1313 in the first polarity solder strip 131); the third groove corresponds to the overlap of the orthographic projections of the fine grid lines and the main grid lines of different polarities on the substrate.

[0046] In this embodiment, the Figure 5 Taking the third groove 1313 in the first polarity solder strip 131 as an example, the third groove 1313 is provided to balance the height difference on the main grid line surface caused by the provision of the insulating dielectric layer or the uneven deposition of the main grid line. Therefore, the third groove 1313 is provided to correspond to the overlap of the orthographic projections of the thin grid lines of different polarities and the main grid line on the substrate. On the one hand, the third groove 1313 can balance the height difference of the main grid line when the insulating dielectric layer is provided and when the insulating dielectric layer is not provided, ensuring the stability of the grid line structure. On the other hand, it can enable the solder strip to achieve self-alignment in the second direction, reduce the failure of the solder strip due to sliding in the second direction, and improve the welding yield.

[0047] In one embodiment, the size of the third groove in the first direction is less than or equal to the size of the insulating dielectric layer in the first direction, and the difference between the depth of the third groove and the thickness of the protrusion is within a preset range; the thickness of the protrusion is the difference in thickness between the position where the insulating dielectric layer is set and the position where the insulating dielectric layer is not set in the main gate line.

[0048] Among them, the protrusion thickness may be caused by the setting of the insulating dielectric layer, or may be caused by the setting of the insulating dielectric layer and the uneven deposition of the main grid line. The size of the third groove in the present embodiment in the first direction is less than or equal to the size of the insulating dielectric layer in the first direction, which can avoid the electrical connection between the welding strip and the fine grid lines of different polarities, thereby preventing leakage, ensuring the insulation between the conductive parts of different polarities and the fine grid lines, and improving the performance of the grid line structure. The difference between the depth of the third groove and the protrusion thickness is within a preset range, which can be understood as the depth of the third groove being approximately equal to the thickness of the insulating dielectric layer, thereby ensuring the electrical connection between the welding strip and the main grid line and the stability of the grid line structure.

[0049] In one embodiment, a fourth groove is provided on a side of the conductive member facing the fine gate line and the substrate, and the fourth groove is used to correspond to the overlapping position of the projections between the fine gate lines and the conductive member of different polarities; the depth of the fourth groove is greater than the thickness of the fine gate line, and the size of the fourth groove in the second direction is greater than the size of the fine gate line in the second direction.

[0050] This embodiment provides an implementation method for insulating fine grid lines and conductive members of different polarities when an insulating dielectric layer is not provided. A fourth groove is provided on the side of the conductive member facing the fine grid lines and the substrate. The size of the fourth groove is set to be larger than the size of the fine grid lines, that is, the depth of the fourth groove is greater than the thickness of the fine grid lines on the substrate. The size of the fourth groove in the second direction is greater than the width of the fine grid lines in the second direction (which can be understood as the width of the fine grid lines). This ensures that the fine grid lines and conductive members of different polarities located at the overlapping projections are insulated from each other. In one embodiment, the present application also provides a back-contact solar cell, including the grid line structure of any of the above embodiments.

[0051] It can be understood that since the back-contact solar cell is provided with the grid line structure of any of the above embodiments, when the grid line structure has a significantly outstanding technical effect, the back-contact solar cell also has a correspondingly significantly outstanding technical effect.

[0052] In one embodiment, the present application also provides a photovoltaic assembly comprising at least one cell string, the cell string comprising at least two solar cells; at least one solar cell is a back-contact solar cell in the above embodiment, or at least one solar cell comprises a grid line structure in any of the above embodiments.

[0053] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0054] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present application. It should be noted that a person skilled in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A gate line structure, characterized in that: The gate line structure is provided on a substrate, and includes fine gate lines of a first polarity and a second polarity that extend continuously along a first direction and are alternately spaced in a second direction, and conductive members of the first polarity and the second polarity that extend continuously along the second direction and are alternately spaced in the first direction; the first polarity is opposite to the second polarity, and the first direction is perpendicular to the second direction; The fine grid lines respectively overlap with the orthographic projections of the plurality of conductive elements on the substrate, the fine grid lines of different polarities and the conductive elements at the overlapping projections are insulated from each other, and the fine grid lines of the same polarity and the conductive elements at the overlapping projections are electrically connected.

2. The gate line structure according to claim 1, wherein: The gate line structure further includes an insulating dielectric layer, which is provided between the thin gate lines of different polarities and the conductive member to insulate the thin gate lines of different polarities and the conductive member from each other.

3. The gate line structure according to claim 2, wherein: The conductive member includes a welding strip.

4. The gate line structure according to claim 3, wherein: The first and second polarities of the soldering strips are provided with a first groove and a second groove on one side facing the fine grid line, the insulating dielectric layer and the substrate; the first groove in the soldering strip of the first polarity corresponds to the fine grid line of the first polarity; the first groove in the soldering strip of the second polarity corresponds to the fine grid line of the second polarity, and the second groove corresponds to the insulating dielectric layer.

5. The gate line structure according to claim 4, wherein: The difference between the depth of the first groove and the thickness of the corresponding fine gate line is within a preset range, and the dimensions of the first groove and the second groove in the first direction are less than or equal to the dimension of the insulating dielectric layer in the first direction; the difference between the depth of the second groove and the first thickness is within a preset range; the first thickness is the sum of the thicknesses of the corresponding fine gate line and the insulating dielectric layer.

6. The gate line structure according to claim 2, wherein: The conductive member includes a stacked welding strip and a main grid line, and the main grid line is arranged between the welding strip and the corresponding fine grid line, the insulating medium layer and the substrate.

7. The gate line structure according to claim 6, wherein: A third groove is provided on a side of the welding strip facing the main grid line; the third groove corresponds to a position where the orthographic projections of the thin grid lines of different polarities and the main grid line on the substrate overlap.

8. The gate line structure according to claim 7, wherein: The size of the third groove in the first direction is less than or equal to the size of the insulating dielectric layer in the first direction, and the difference between the depth of the third groove and the protrusion thickness is within a preset range; the protrusion thickness is the thickness difference between the position where the insulating dielectric layer is set and the position where the insulating dielectric layer is not set in the main gate line.

9. The gate line structure according to claim 1, wherein: A fourth groove is provided on the side of the conductive member facing the fine gate line and the substrate, and the fourth groove is used to correspond to the overlapping position of the projection between the fine gate line and the conductive member of different polarities; the depth of the fourth groove is greater than the thickness of the fine gate line, and the size of the fourth groove in the second direction is greater than the size of the fine gate line in the second direction.

10. A back contact solar cell, characterized in that: The gate line structure comprises the gate line structure according to any one of claims 1 to 9.

11. A photovoltaic module, characterized in that: The invention comprises at least one cell string, wherein the cell string comprises at least two solar cells; at least one of the solar cells is the back-contact solar cell according to claim 10, or at least one of the solar cells comprises the grid line structure according to any one of claims 1 to 9.

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