Power device structure suitable for being welded with radiator and electronic equipment using same

Abstract

The utility model discloses a power device structure suitable for being welded with a radiator and an electronic device using the same, the power device structure comprises a discrete device and a heat radiation structure, the discrete device comprises a chip, a bonding wire, a pin and a plastic package housing, the heat radiation structure comprises a heat radiation substrate and a radiator, the heat radiation substrate is divided into three layers, and the heat radiation substrate is arranged on the chip. The upper metal layer, the middle insulation heat conduction layer and the lower metal layer are sequentially arranged from top to bottom, and the chip, the bonding wires, the heat dissipation substrate and part of the pins are plastically packaged into a whole by the plastic package shell. The scheme aims to solve the problems that when an existing power device structure is connected with a heat dissipation structure, the process is complex, the assembly time and cost are increased, the heat dissipation efficiency is limited, and the device size is increased. The power device structure suitable for being welded with the radiator and the electronic equipment using the power device structure suitable for being welded with the radiator are innovatively researched and developed, so that the heat dissipation structure is greatly simplified, the integration degree of the device is improved, and the heat dissipation effect is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor device production, in particular to a power device structure suitable for welding with a radiator and electronic equipment using the same. Background Art

[0002] Power devices generate a lot of heat during operation, and their heat dissipation performance directly affects the output capacity and service life of the device. Figure 2 、 Figure 3 As shown, the power device adopts a standard package such as TO-247, and a copper frame 912 is provided at the bottom thereof for supporting the chip 911 and dissipating heat.

[0003] In practical applications, such as Figure 1 As shown, in order to achieve insulation between the heat sink 92 and the copper frame 912 at the bottom of the device, a ceramic substrate 93 is usually added between the discrete device 91 and the heat sink 92. It has excellent insulation and thermal conductivity. In addition, in order to fit the heat sink 92, the ceramic substrate 93, and the copper frame 912 at the back of the device and reduce the contact heat between them, thermal conductive silicone grease 94 needs to be applied on the contact surface. Figure 1 As shown, the power device chip 911 is connected to the copper frame 912 via solder 914 and encapsulated in an insulating housing 913, with the bottom of the copper frame 912 exposed to the outside. A ceramic substrate 93 is placed between the copper frame 912 and the heat sink 92. Both sides of the ceramic substrate 93 are coated with thermal grease 94 to ensure good heat conduction.

[0004] However, this packaging structure has some problems. First, thermal grease 94 needs to be coated on both the front and back sides of the ceramic substrate 93, which is a complex process and increases assembly time and cost. Second, the thermal conductivity of thermal grease 94 is low, generally between 1-8 W / (m·℃), which limits the heat dissipation efficiency and makes it difficult to meet the heat dissipation requirements of high-power devices. In addition, the power devices are fixed in the engineering by means of screws, etc., and the assembly process is cumbersome. The devices cannot be accurately matched with the heat sink 92, which affects production efficiency.

[0005] Furthermore, the additional ceramic substrate 93 and thermal grease 94 increase the thermal resistance in the heat dissipation path, affecting heat conduction efficiency. This also increases the overall device size, hindering the miniaturization and high-density integration of power devices. As electronic devices evolve towards higher power and smaller sizes, existing heat dissipation and insulation structures are no longer able to meet application requirements.

[0006] In view of this, how to solve the problems of complex process, increased assembly time and cost, limited heat dissipation efficiency, and increased device size when connecting the existing power device structure to the heat dissipation structure has become the subject to be studied and solved by the present invention. Utility Model Content

[0007] The purpose of the utility model is to provide a power device structure suitable for welding with a radiator and an electronic device using the same.

[0008] To achieve the above-mentioned purpose, the technical solution adopted in the first aspect of the present invention is: proposing a power device structure suitable for welding with a heat sink, wherein the power device structure includes a discrete device and a heat dissipation structure.

[0009] The discrete device includes a chip, bonding wires, pins and a plastic package shell, and the chip is electrically connected to the pins through the bonding wires.

[0010] The heat dissipation structure includes a heat dissipation substrate and a heat sink. The heat dissipation substrate is divided into three layers, namely, an upper metal layer, an intermediate insulating heat-conducting layer, and a lower metal layer from top to bottom. The upper surface of the upper metal layer has a first welding area, and the lower surface of the chip is welded to the first welding area of ​​the upper metal layer.

[0011] The heat sink comprises a base and heat dissipation fins. The upper surface of the base has a second welding area, and the lower surface of the lower metal layer is welded to the second welding area of ​​the base.

[0012] The chip, bonding wires, heat dissipation substrate and some pins are plastic-sealed into one body by the plastic-sealed shell.

[0013] To achieve the above-mentioned purpose, the technical solution adopted in the second aspect of the present invention is: to provide an electronic device, which uses the power device structure suitable for welding to the heat sink as described in the first aspect of the present invention.

[0014] The relevant contents of this utility model are explained as follows:

[0015] 1. The implementation of the above-mentioned technical solution of the present invention addresses the problems of complex process, increased assembly time and cost, limited heat dissipation efficiency, and increased device volume when the current existing power device structure is connected to the heat dissipation structure. An innovative power device structure suitable for welding to a heat sink and an electronic device using the power device structure suitable for welding to a heat sink have been developed, thereby greatly simplifying the heat dissipation structure, improving the integration of the device, and enhancing the heat dissipation effect. This power device structure includes a discrete device and a heat sink structure. The discrete device includes a chip, bonding wires, pins, and a plastic package. The heat sink structure includes a heat sink substrate and a heat sink. The chip is soldered to the upper metal layer of the heat sink substrate, and the lower metal layer of the heat sink substrate is soldered to the base of the heat sink. Compared with the existing method of coating both sides of the ceramic substrate with thermal grease, this structure can be soldered in a single furnace, eliminating the need for coating both sides with grease and simplifying the process. Compared with thermal grease, the soldering method has higher thermal conductivity, more efficient heat transfer, and lower thermal resistance. It also forms a strong mechanical connection, enhancing structural strength and long-term reliability, reducing the number of interface layers, simplifying the assembly process, and facilitating device miniaturization and high power density design. The layered design of the heat sink substrate and the connection method between the heat sink substrate, chip, and heat sink provide better thermal matching performance than the original method of connecting the copper frame to the ceramic substrate and the ceramic substrate to the heat sink through thermal grease. This reduces mechanical stress caused by differences in thermal expansion coefficients and improves device reliability under thermal cycling and mechanical vibration.

[0016] 2. In the above technical solution, the intermediate insulating and heat-conducting layer is a ceramic layer, thereby providing good thermal conductivity and good insulation performance.

[0017] 3. In the above technical solution, the upper and lower metal layers are copper layers, and the intermediate insulating and thermally conductive layer is made of alumina to form a ceramic layer. The ceramic layer made of alumina provides excellent electrical insulation performance and a thermal expansion coefficient similar to that of the chip, reducing thermal stress and extending the life of the device. The upper and lower metal layers are copper layers, which provide good electrical and thermal conductivity, as well as good bonding between the copper layer and the ceramic substrate.

[0018] 4. In this technical solution, the upper metal layer is bonded to the intermediate insulating and thermally conductive layer via high-temperature oxidation welding, and the lower metal layer is bonded to the intermediate insulating and thermally conductive layer and the lower metal layer via high-temperature oxidation welding. This provides better thermal matching than the conventional method of connecting the copper frame and ceramic substrate, and the ceramic substrate and heat sink, using thermal grease. This reduces mechanical stress caused by differences in thermal expansion coefficients and improves device reliability under thermal cycling and mechanical vibration.

[0019] 5. In the above technical solution, the upper metal layer of the heat dissipation substrate and the lower surface of the chip are connected by brazing, and the lower metal layer of the heat dissipation substrate and the heat sink are connected by brazing. The welding operation can be completed in one furnace, thereby omitting the operation of coating silicone grease on both sides.

[0020] 6. In the above technical solution, a first solder paste layer is coated on the first soldering area of ​​the upper metal layer, and a second solder paste layer is coated on the second soldering area of ​​the base, which has higher thermal conductivity, can conduct heat more efficiently, and reduce thermal resistance.

[0021] 7. In the above technical solution, the upper metal layer and the lower metal layer of the heat dissipation substrate have the same surface area and the same shape; the shape of the intermediate insulating thermal conductive layer is the same as that of the upper metal layer and the lower metal layer, and the surface area of ​​the intermediate insulating thermal conductive layer is larger than that of the upper metal layer and the lower metal layer, thereby enhancing the electrical insulation performance.

[0022] 8. In the above technical solution, the thickness of the upper and lower metal layers ranges from 0.3 to 0.4 mm, and the thickness of the intermediate insulating and heat-conducting layer ranges from 0.32 to 0.63 mm. Proper thickness setting can improve thermal conductivity. The thickness of the upper and lower metal layers is preferably 0.4 mm, but can also be 0.3 mm, 0.35 mm, etc.; the thickness of the intermediate insulating and heat-conducting layer is preferably 0.5 mm, but can also be 0.32 mm, 0.63 mm, etc.

[0023] 9. In this utility model, unless otherwise expressly specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; they can refer to mechanical connection, direct connection, or indirect connection through an intermediate medium; they can refer to internal communication between two elements or interaction between two elements, unless otherwise expressly specified. Those skilled in the art will understand the specific meanings of the above terms in this application based on the specific circumstances.

[0024] 10. In the present invention, the terms "upper" and "lower" indicate the direction in which the discrete device is located when it is soldered to the heat sink. In addition, the terms "center", "upper", "lower", "bottom", "inside", "outside", etc. indicate orientations or positional relationships based on the orientations or positional assembly relationships shown in the accompanying drawings. They are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they should not be understood as limitations on the present application.

[0025] 11. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referenced. Thus, a feature specified as "first" or "second" may explicitly or implicitly include at least one such feature. Throughout the description of this application, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0026] Due to the application of the above technical solution, the utility model has the following advantages compared with the prior art:

[0027] The present invention comprises a discrete device and a heat dissipation structure. The discrete device comprises a chip, bonding wires, pins, and a plastic package. The heat dissipation structure comprises a heat dissipation substrate and a heat sink. The chip is soldered to the upper metal layer of the heat dissipation substrate, and the lower metal layer of the heat dissipation substrate is soldered to the base of the heat sink. Compared with the existing method of coating both sides of the ceramic substrate with thermal grease, this structure can be completed in a single furnace, thereby eliminating the need for coating both sides with grease and simplifying the process. Compared with thermal grease, the welding method not only has higher thermal conductivity and more efficient heat transfer, but also reduces thermal resistance. It also forms a strong mechanical connection, enhances structural strength and long-term reliability, reduces the number of interface layers, simplifies the assembly process, and facilitates device miniaturization and high power density design. The layered design of the heat dissipation substrate and the design of the connection between the heat dissipation substrate, the chip, and the heat sink provide better thermal matching performance than the conventional method of connecting the copper frame to the ceramic substrate and the ceramic substrate to the heat sink through thermal grease. This can reduce mechanical stress caused by differences in thermal expansion coefficients and improve device reliability under thermal cycling and mechanical vibration.

[0028] 2. In response to the problems of complex process, increased assembly time and cost, limited heat dissipation efficiency, and increased device volume in the current power device structure when connected to the heat dissipation structure, the utility model innovatively develops a power device structure suitable for welding with a heat sink and an electronic device using the power device structure suitable for welding with a heat sink, thereby greatly simplifying the heat dissipation structure, improving the integration of the device, and enhancing the heat dissipation effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 This is a schematic diagram of the heat dissipation structure suitable for existing standard TO-247 package discrete devices;

[0030] Figure 2 Schematic diagram of the internal structure of existing discrete devices that fit into the standard TO-247 package (viewpoint one);

[0031] Figure 3 Schematic diagram of the internal structure of existing discrete devices that fit into the standard TO-247 package (viewpoint 2);

[0032] Figure 4 This is an overall schematic diagram of a power device structure suitable for welding to a heat sink according to an embodiment of the present utility model;

[0033] Figure 5 This is a schematic diagram of the various parts of the power device structure suitable for welding to the heat sink according to the embodiment of the utility model;

[0034] Figure 6 Schematic diagram of the heat dissipation substrate in an embodiment of the present invention.

[0035] The following is a schematic diagram of the components in the accompanying drawings:

[0036] 1. Discrete devices;

[0037] 11. Chip; 12. Bonding wire; 13. Pin; 14. Plastic casing;

[0038] 2. Heat dissipation structure;

[0039] 21, heat dissipation substrate; 211, upper metal layer; 2110, first welding area; 2111, first solder paste layer; 212, middle insulating thermal conductive layer; 213, lower metal layer;

[0040] 22, radiator; 221, base; 2210, second welding area; 2211, second solder paste layer; 222, heat sink fin;

[0041] 91. Discrete device; 911. Chip; 912. Copper frame; 913. Insulating shell; 914. Solder;

[0042] 92. Radiator; 93. Ceramic substrate; 94. Thermal grease. DETAILED DESCRIPTION

[0043] To make the above-mentioned objects, features, and advantages of the present application more clearly understood, the specific embodiments of the present application are described in detail below with reference to the accompanying drawings. The following description sets forth many specific details to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways than those described herein, and those skilled in the art can make similar improvements without violating the scope of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0044] The present utility model aims to solve the problems existing in the existing power device structure when connected to the heat dissipation structure 2, such as complex process, increased assembly time and cost, limited heat dissipation efficiency, and increased device volume, so as to provide an innovatively designed power device structure suitable for welding to a radiator and an electronic device using the power device structure suitable for welding to a radiator, thereby greatly simplifying the heat dissipation structure 2, improving the integration of the device, and enhancing the heat dissipation effect.

[0045] like Figures 4 to 6 As shown, the first embodiment of the present invention proposes a power device structure suitable for welding with a heat sink, and the power device structure includes a discrete device 1 and a heat dissipation structure 2.

[0046] The discrete device 1 includes a chip 11, bonding wires 12, pins 13 and a plastic package 14. The chip 11 is electrically connected to the pins 13 via the bonding wires 12 (see FIG. Figure 5 ).

[0047] The heat dissipation structure 2 includes a heat dissipation substrate 21 and a heat sink 22. The heat dissipation substrate 21 is divided into three layers, which are an upper metal layer 211, an intermediate insulating heat conducting layer 212, and a lower metal layer 213 (see FIG. Figure 6 ), the upper surface of the upper metal layer 211 has a first welding area 2110, and the lower surface of the chip 11 is welded to the first welding area 2110 of the upper metal layer 211.

[0048] The heat sink 22 includes a base 221 and heat dissipation fins 222 (see Figure 5 ), the upper surface of the base 221 has a second welding area 2210, and the lower surface of the lower metal layer 213 is welded to the second welding area 2210 of the base 221.

[0049] The chip 11, bonding wires 12, heat dissipation substrate 21 and part of the pins 13 are sealed together by the plastic shell 14 (see Figure 4 ).

[0050] Through the implementation of the first embodiment of the present invention, compared with the existing method of coating both sides of the ceramic substrate with thermal grease, this structure can complete the welding operation in a single furnace, thereby omitting the operation of coating both sides with grease and simplifying the process flow. Compared with thermal grease, the welding method has higher thermal conductivity, more efficient heat conduction, and lower thermal resistance. In addition, welding forms a strong mechanical connection, enhances structural strength and long-term reliability, reduces the number of interface layers, simplifies the assembly process, and is conducive to the miniaturization and high power density design of the device. In addition, the layered design of the heat dissipation substrate 21 and the design of the connection method of the heat dissipation substrate 21 to the chip 11 and the heat sink 22 have better thermal matching performance than the original method of connecting the copper frame to the ceramic substrate and the ceramic substrate to the heat sink 22 through thermal grease. This can reduce the mechanical stress caused by the difference in thermal expansion coefficient and improve the reliability of the device under thermal cycling and mechanical vibration.

[0051] In the first embodiment of the present invention, the intermediate insulating heat-conducting layer 212 is a ceramic layer, thereby providing good thermal conductivity and good insulation performance.

[0052] In Example 1 of the present invention, the upper metal layer 211 and the lower metal layer 213 are copper layers, and the intermediate insulating and thermally conductive layer 212 is prepared as a ceramic layer using aluminum oxide. The ceramic layer prepared using aluminum oxide provides excellent electrical insulation performance and a thermal expansion coefficient similar to that of the chip 11, reduces thermal stress, and extends the life of the device. The upper metal layer 211 and the lower metal layer 213 are copper layers, which provide good electrical and thermal conductivity, as well as good bonding ability between the copper layer and the ceramic substrate.

[0053] In the first embodiment of the present invention, the upper metal layer 211 is bonded to the intermediate insulating and thermally conductive layer 212 via high-temperature oxidation welding, and the lower metal layer 213 is bonded to the intermediate insulating and thermally conductive layer 212 and the lower metal layer 213 via high-temperature oxidation welding. This provides better thermal matching performance than the conventional method of connecting the copper frame and the ceramic substrate, and the ceramic substrate and the heat sink 22, via thermal grease. This reduces mechanical stress caused by differences in thermal expansion coefficients and improves device reliability under thermal cycling and mechanical vibration.

[0054] In the first embodiment of the present invention, the upper metal layer 211 of the heat dissipation substrate 21 and the lower surface of the chip 11 are connected by brazing, and the lower metal layer 213 of the heat dissipation substrate 21 and the heat sink 22 are connected by brazing. The welding operation can be completed in one furnace, thereby omitting the operation of coating silicone grease on both sides.

[0055] In embodiment 1 of the present invention, a first solder paste layer 2111 is coated on the first soldering area 2110 of the upper metal layer 211, and a second solder paste layer 2211 is coated on the second soldering area 2210 of the base 221. The thermal conductivity is higher, heat can be conducted more efficiently, and thermal resistance can be reduced.

[0056] In embodiment 1 of the present invention, the upper metal layer 211 and the lower metal layer 213 of the heat dissipation substrate 21 have the same surface area and the same shape; the shape of the intermediate insulating heat-conducting layer 212 is the same as that of the upper metal layer 211 and the lower metal layer 213, and the surface area of ​​the intermediate insulating heat-conducting layer 212 is larger than that of the upper metal layer 211 and the lower metal layer 213, so as to enhance the electrical insulation performance.

[0057] In the first embodiment of the present invention, the thickness of the upper metal layer 211 and the lower metal layer 213 ranges from 0.3 to 0.4 mm, and the thickness of the intermediate insulating heat-conducting layer 212 ranges from 0.32 to 0.63 mm. The scientific and reasonable thickness size setting method can improve thermal conductivity.

[0058] Embodiment 2: Embodiment 2 of the present invention proposes an electronic device, which uses the power device structure suitable for welding with a heat sink described in the present invention. Its specific structure can refer to the content described in the first embodiment and will not be repeated here.

[0059] In addition, the technical solution of the present invention is introduced with one of the detailed embodiments.

[0060] This detailed embodiment proposes a power device structure suitable for soldering to a heat sink, comprising a discrete device 1 and a heat dissipation structure 2. Discrete device 1 includes a chip 11, bonding wires 12, pins 13, and a plastic housing 14. Chip 11 is electrically connected to pins 13 via bonding wires 12, and plastic housing 14 is molded using a flame-retardant epoxy resin. Heat dissipation structure 2 includes a heat dissipation substrate 21 and a heat sink 22. Heat dissipation substrate 21 is a DBC substrate. The power semiconductor device in this detailed embodiment is suitable for discrete device 1 in a TO-247 package. Compared to a standard TO-247 package, this package only lacks a back copper frame. The relative positions of some external pins 13, chip 11, and bonding wires 12 remain unchanged, all encapsulated within the plastic housing 14.

[0061] In this detailed embodiment, the heat dissipation structure 2 includes a heat dissipation substrate 21 (DBC substrate) and a heat sink 22. The heat dissipation substrate 21 is divided into three layers, namely, an upper metal layer 211, an intermediate insulating heat-conducting layer 212, and a lower metal layer 213 from top to bottom. The upper surface of the upper metal layer 211 has a first welding area 2110, and the lower surface of the chip 11 is welded to the first welding area 2110 of the upper metal layer 211; the heat sink 22 includes a base 221 and heat dissipation fins 222. The upper surface of the base 221 has a second welding area 2210, and the lower surface of the lower metal layer 213 is welded to the second welding area 2210 of the base 221; the chip 11, the bonding wire 12, the heat dissipation substrate 21 and some pins 13 are plastic-encapsulated as a whole by the plastic package shell 14.

[0062] In this detailed embodiment, the heat sink substrate 21 comprises copper for its upper and lower metal layers 211 and 213, respectively. The intermediate insulating and thermally conductive layer 212 (intermediate ceramic layer) is made of Al2O3. The upper and lower metal layers are electrically insulated. Compared to a conventional copper frame, the heat sink substrate 21 directly bonds the copper layer to a highly thermally conductive ceramic layer, allowing heat generated by the chip 11 to be more efficiently transferred to the heat sink 22. The thickness of the upper and lower metal layers 211 and 213 is 0.4 mm. In practical applications, this effectively reduces thermal resistance by approximately 20% to 30%, improving heat dissipation efficiency. Furthermore, the ceramic layer provides excellent electrical insulation and a thermal expansion coefficient similar to that of the chip 11, reducing thermal stress and extending device life. The heat sink 22 consists of a base 221 and heat dissipation fins 222. The heat sink 22 is connected to the base 221 and the lower metal layer 213 of the heat sink substrate 21 by brazing.

[0063] In this detailed embodiment, a heat dissipation substrate 21 is used to replace the original copper frame structure and ceramic substrate, and the heat dissipation substrate 21 and the chip 11 bonding wire 12 are encapsulated together in a plastic package, thereby improving the integration of the entire heat dissipation device and reducing the overall volume of the device; simplifying the process flow, reducing the use of silicone grease and lowering costs; shortening the heat transfer path, optimizing the heat dissipation path, and improving the heat dissipation performance.

[0064] In this detailed embodiment, the heat sink substrate 21 directly bonds the copper and ceramic layers via high-temperature oxidation. This provides improved thermal matching compared to conventional methods that use thermal grease to connect the copper frame to the ceramic substrate, and vice versa. This reduces mechanical stress caused by differences in thermal expansion coefficients, improving device reliability under thermal cycling and mechanical vibration. Furthermore, the middle ceramic layer of the heat sink substrate 21 is 0.5 mm thick, providing excellent thermal conductivity. The upper and lower metal layers are smaller than the middle ceramic layer, enhancing electrical insulation.

[0065] In this detailed embodiment, the upper metal layer 211 of the heat sink substrate 21 and the lower surface of the chip 11, as well as the lower metal layer 213 of the heat sink substrate 21 and the surface of the base 221 of the heat sink 22, are connected by brazing. This allows the soldering operation to be completed in a single furnace, eliminating the need for coating both sides with silicone grease and simplifying the process. The solder, made of a tin-silver-copper alloy, has a thermal conductivity of approximately 50 W / (m·K), significantly higher than the 1-8 W / (m·K) of thermal grease. This allows for more efficient heat transfer and reduces thermal resistance. Furthermore, the soldering creates a strong mechanical connection, enhancing structural strength and long-term reliability, reducing the number of interface layers, and simplifying the assembly process, facilitating device miniaturization and high-power density design.

[0066] Through the implementation of the above embodiments, the problems existing in the existing power device structure when connecting the heat dissipation structure 2, such as complex process, increased assembly time and cost, limited heat dissipation efficiency, and increased device volume, are solved, thereby achieving the purpose of the present utility model.

[0067] The above embodiments are intended only to illustrate the technical concepts and features of the present invention. Their purpose is to enable those familiar with the art to understand the contents of the present invention and implement them accordingly. They are not intended to limit the scope of protection of the present invention. Any equivalent changes or modifications based on the spirit of the present invention are intended to be included in the scope of protection of the present invention.

Claims

1. A power device structure suitable for welding to a heat sink, characterized by: The power device structure includes a discrete device (1) and a heat dissipation structure (2); The discrete device (1) comprises a chip (11), a bonding wire (12), a pin (13) and a plastic package shell (14), wherein the chip (11) is electrically connected to the pin (13) via the bonding wire (12); The heat dissipation structure (2) comprises a heat dissipation substrate (21) and a heat sink (22); the heat dissipation substrate (21) is divided into three layers, which are, from top to bottom, an upper metal layer (211), an intermediate insulating heat-conducting layer (212), and a lower metal layer (213); the upper surface of the upper metal layer (211) has a first welding area (2110); and the lower surface of the chip (11) is welded to the first welding area (2110) of the upper metal layer (211); The heat sink (22) comprises a base (221) and heat dissipation fins (222); the upper surface of the base (221) has a second welding area (2210); and the lower surface of the lower metal layer (213) is welded to the second welding area (2210) of the base (221); The chip (11), the bonding wire (12), the heat dissipation substrate (21) and part of the pins (13) are plastic-sealed as a whole by the plastic-sealed housing (14).

2. A power device structure suitable for welding to a heat sink according to claim 1, characterized in that: The intermediate insulating heat-conducting layer (212) is a ceramic layer.

3. The power device structure suitable for welding to a heat sink according to claim 2, characterized in that: The upper metal layer (211) and the lower metal layer (213) are copper layers, and the intermediate insulating heat-conducting layer (212) is a ceramic layer made of aluminum oxide.

4. A power device structure suitable for welding to a heat sink according to any one of claims 1 to 3, characterized in that: The upper metal layer (211) and the middle insulating heat-conducting layer (212) are bonded by high-temperature oxidation welding, and the lower metal layer (213) and the middle insulating heat-conducting layer (212) and the lower metal layer (213) are bonded by high-temperature oxidation welding.

5. The power device structure suitable for welding to a heat sink according to claim 4, characterized in that: The upper metal layer (211) of the heat dissipation substrate (21) and the lower surface of the chip (11) are connected by brazing, and the lower metal layer (213) of the heat dissipation substrate (21) and the heat sink (22) are connected by brazing.

6. The power device structure suitable for welding to a heat sink according to claim 5, characterized in that: A first solder paste layer (2111) is coated on the first soldering area (2110) of the upper metal layer (211), and a second solder paste layer (2211) is coated on the second soldering area (2210) of the base (221).

7. The power device structure suitable for welding to a heat sink according to claim 6, characterized in that: The upper metal layer (211) and the lower metal layer (213) of the heat dissipation substrate (21) have the same surface area and the same shape; the shape of the intermediate insulating heat-conducting layer (212) is the same as that of the upper metal layer (211) and the lower metal layer (213); and the surface area of ​​the intermediate insulating heat-conducting layer (212) is greater than that of the upper metal layer (211) and the lower metal layer (213).

8. The power device structure suitable for welding to a heat sink according to claim 4, characterized in that: The thickness of the upper metal layer (211) and the lower metal layer (213) ranges from 0.3 to 0.4 mm, and the thickness of the intermediate insulating heat-conducting layer (212) ranges from 0.32 to 0.63 mm.

9. An electronic device, characterized in that: The electronic device uses the power device structure suitable for welding to a heat sink as described in any one of claims 1 to 8.

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