Bulk acoustic wave resonator assembly
By providing a conductor layer and an insulating layer in the bulk acoustic wave resonator component, the problems of parasitic oscillation and poor heat dissipation are solved, more efficient heat dissipation and smaller device size are achieved, and integration is facilitated.
Patent Information
- Application Number
- CN202422589073.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-25
- Publication Date
- 2025-09-09
- Estimated Expiration
- 2034-10-25
AI Technical Summary
Existing BAW resonators have problems such as parasitic oscillation, poor heat dissipation and large device size.
By arranging a first conductor layer and a second conductor layer on the surface of the substrate, the top electrode of the first resonator and the bottom electrode of the second resonator are connected to each other, avoiding direct connection or wiring connection, increasing the thickness of the connection to reduce resistance, and realizing the connection below the effective resonance area, and arranging an insulating layer and a thermal conductive material to improve heat dissipation efficiency.
It reduces parasitic oscillation, improves heat dissipation efficiency, reduces power loss, reduces device size, and facilitates integration.
Smart Images
Figure CN223322059U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, and mainly relates to a bulk acoustic wave resonator component. Background Art
[0002] The FBAR's structure consists of a "sandwich" of electrodes, piezoelectric film, and electrodes—a layer of piezoelectric material sandwiched between two metal electrode layers. By applying a sinusoidal signal between the two electrodes, the FBAR uses the inverse piezoelectric effect to convert the input electrical signal into mechanical resonance, and then uses the piezoelectric effect to convert the mechanical resonance into an electrical output signal.
[0003] For ease of use, multiple BAW resonators are usually fabricated on the same substrate to form a BAW resonator assembly.
[0004] Existing resonator components have electrode connection ends, and the electrode connection ends extend outward. Outside the effective area, the three-layer overlap of the top electrode, piezoelectric layer and bottom electrode will produce parasitic oscillations, thereby affecting the performance of the device. The double-layer overlap of the bottom electrode / top electrode and the piezoelectric layer outside the effective resonance area will also produce a certain degree of parasitic oscillations, resulting in the leakage of acoustic energy and reducing the Q value. In addition, the resonator will generate heat when working. Since the effective resonance area of the cavity resonator is surrounded by air above and below, its heat dissipation performance is poor, and the accumulation of heat has a negative impact on the performance of the resonator. The resonators are connected by wiring. Longer wiring extends the transmission path. In particular, the electrode thickness is thinner at high frequencies, which further aggravates the electrical loss and reduces the Q value. On the other hand, since a certain space is reserved between devices for connection when the resonators are connected, especially when multiple resonators are connected to each other, as the number of connection points increases, the overall size of the device gradually increases. Devices with larger areas are not conducive to later integration and other operations, and will further degrade device performance. Utility Model Content
[0005] In view of the above situation, in order to overcome the defects of the prior art, the purpose of the present invention is to provide a bulk acoustic wave resonator assembly to solve the problems of parasitic resonance, poor heat dissipation and large device size in the prior art bulk acoustic wave resonator.
[0006] In order to achieve the above-mentioned object, the first aspect of the present invention discloses a bulk acoustic wave resonator assembly, comprising:
[0007] substrate;
[0008] The first resonator is located on the upper surface of the substrate and includes a first cavity, a first bottom electrode, a first piezoelectric layer and a first top electrode that are stacked;
[0009] A second resonator is disposed adjacent to the first resonator and includes a second cavity, a second bottom electrode, a second piezoelectric layer, and a second top electrode that are stacked;
[0010] A first conductor layer is provided between the first cavity and the substrate, a second conductor layer is provided between the second cavity and the substrate, the first conductor layer and the second conductor layer are insulated, and the first cavity and the second cavity are connected to each other; at least one side of the first top electrode is electrically connected to the first conductor layer, and at least one end of the first conductor layer extends from the first cavity to the second cavity and is electrically connected to at least one side of the second bottom electrode.
[0011] By arranging a first conductor layer and a second conductor layer on the surface of the substrate to connect the top electrode of the first resonator and the bottom electrode of the second resonator to each other, the connection between the two resonators can be achieved below the effective resonance area, avoiding the increase in connection sites caused by the connection between the resonators or the external wiring connection in the prior art, achieving size reduction and facilitating integration. In addition, reducing the external connection end can avoid the overlap of the electrode and the piezoelectric layer in the non-effective resonance area, thereby reducing the parasitic resonance at the edge of the effective resonance area; the conductor layer occupies most of the bottom surface of the cavity, achieving the maximum contact area with the substrate, and effectively improving the heat dissipation efficiency of the device.
[0012] Preferably, the surfaces of the first and second conductor layers on the sides closest to the substrate are roughened, with the surface roughness of the first and second conductor layers on the sides closest to the substrate being greater than the surface roughness of the sides farther from the substrate. By increasing the roughness of the first and second conductor layers near the substrate, the contact area between the conductor layers and the substrate is further increased, further improving heat dissipation efficiency.
[0013] Preferably, an intermediate layer is provided between the first conductor layer and / or the second conductor layer and the substrate to enhance adhesion. Providing the intermediate layer can enhance adhesion between the conductor layer and the substrate, thereby preventing the conductor layer and the substrate from peeling off due to the conductor layer being too rough.
[0014] Preferably, the first bottom electrode has at least one first bottom electrode connection terminal connected to the outside; and the second top electrode has at least one second top electrode connection terminal connected to the outside.
[0015] Preferably, in a direction perpendicular to the plane of the substrate, the overlapping region of the projections of the first cavity, the first bottom electrode, the first piezoelectric layer, and the first top electrode is a first effective resonant region, and the first bottom electrode is provided with an insulating layer outside the first effective resonant region, the insulating layer being provided at least on the side of the first top electrode electrically connected to the first conductor layer. By providing the insulating layer, not only can parasitic resonance caused by the overlapping of the top electrode, the piezoelectric layer, and the bottom electrode at the edge of the first effective resonant region be avoided, but the first conductor layer and the first bottom electrode can also be isolated, preventing contact and connection between the two, which would cause the resonator assembly to fail to operate. The insulating layer is an insulating thermally conductive material, and the heat generated by the device can be transferred from the insulating layer to the substrate through the first conductor layer for heat dissipation, thereby improving the heat dissipation efficiency of the device.
[0016] Preferably, at least one side of the second top electrode is electrically connected to the second conductor layer, and at least one end of the second conductor layer extends from the second cavity to the first cavity and is electrically connected to at least one side of the first bottom electrode.
[0017] Preferably, in a direction perpendicular to the plane of the substrate, the overlapping region of the projections of the second cavity, the second bottom electrode, the second piezoelectric layer, and the second top electrode constitutes a second effective resonant region. An insulating layer is provided outside the second effective resonant region of the second bottom electrode, with the insulating layer being provided at least on the side of the second top electrode electrically connected to the second conductor layer. Providing the insulating layer not only prevents parasitic resonance caused by the overlapping of the bottom electrode, the piezoelectric layer, and the bottom electrode near the edge of the second effective resonant region, but also isolates the second conductor layer from the second bottom electrode, preventing contact between the two and rendering the device inoperable.
[0018] Preferably, the first resonator is provided with a first external connection terminal, and the second resonator is provided with a second external connection terminal, and the first external connection terminal is provided on the first bottom electrode layer, and the second external connection terminal is provided on the second bottom electrode layer, or the first external connection terminal is provided on the first top electrode layer, and the second external connection terminal is provided on the second top electrode layer. This reduces the difficulty of process manufacturing and facilitates integration operations.
[0019] Preferably, an isolation layer is provided between the first resonator and the second resonator, and the isolation layer is made of an insulating and heat-conducting material, which can isolate the first resonator from the second resonator and can also conduct heat energy in the effective resonance area to achieve the purpose of heat dissipation.
[0020] Preferably, the projected edges of the first and second conductor layers on the substrate surface are irregularly shaped. Providing the first and second conductor layers with irregular edge shapes can scatter transverse mode stray waves at the edges of the resonator, helping to suppress transverse mode stray waves.
[0021] Compared with the prior art, the beneficial effects of the present invention are:
[0022] (1) A first conductor layer and a second conductor layer are provided, and the two conductor layers are insulated from each other, so that the connection between the two resonators can be realized below the effective resonance area, thereby avoiding the increase in connection sites caused by the connection between the resonators or the external wiring connection in the prior art, achieving size reduction and facilitating integration. In addition, the reduction of external connection terminals can avoid the overlap of the electrode and the piezoelectric layer in the non-effective resonance area, thereby reducing the parasitic resonance at the edge of the effective resonance area;
[0023] (2) The first conductor layer and the second conductor layer occupy most of the bottom surface of the cavity, achieving the maximum contact area with the substrate, which can effectively improve the heat dissipation efficiency of the device. The surface roughness of the first conductor layer and the second conductor layer close to the substrate is relatively large, which further increases the contact area between the two and dissipates heat faster. In addition, the intermediate layer provided between the two can improve the adhesion and avoid the phenomenon of peeling between layers.
[0024] (3) The first resonator and the second resonator can be connected in reverse parallel. The vibration directions of the two resonators are opposite, which can effectively offset the nonlinear effect between the two and improve the performance of the device. In addition, the external connection ends of the resonator components can be set on the same layer, simplifying the process and facilitating integration.
[0025] (4) An insulating layer with thermal conductivity is set at the edge of part of the effective resonance area, which improves the heat dissipation efficiency and can further reduce the overlapping area between the electrode and the piezoelectric layer, thereby reducing the parasitic resonance caused by the overlap between the two. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] The accompanying drawings are included to provide a further understanding of the embodiments and are incorporated into and constitute a part of this specification. The accompanying drawings illustrate the embodiments and, together with the description, serve to explain the principles of the present invention. Other embodiments and many of the expected advantages of the embodiments will be readily apparent as they become better understood by reference to the following detailed description. The elements of the drawings are not necessarily to scale with respect to each other. Like reference numerals designate corresponding similar parts.
[0027] Figure 1 A schematic diagram of a connection method of an existing resonator component;
[0028] Figure 2 A top view of the bulk acoustic wave resonator assembly provided in Example 1 of the present utility model;
[0029] Figure 3 For the Figure 2 A cross-sectional view of the BAW resonator component taken along line A-A';
[0030] Figure 4 For the Figure 2 Cross-sectional view of the BAW resonator component with B-B' segmentation;
[0031] Figure 5 For the Figure 2 Cross-sectional view of the BAW resonator component with C-C' split;
[0032] Figure 6 For the Figure 2 Cross-sectional view of the BAW resonator component along the D-D' section;
[0033] Figure 7 For the Figure 2 The cross-sectional deformation diagram of the BAW resonator component divided by A-A';
[0034] Figure 8 A schematic diagram of the edge shape of the conductor layer of the bulk acoustic wave resonator assembly provided in Example 1 of the present utility model;
[0035] Figure 9 For the Figure 2 Deformation diagram of the cross section of the BAW resonator component with C-C' split;
[0036] Markings in the figure: 1-substrate, 2-first bottom electrode, 3-first piezoelectric layer, 4-first top electrode, 5-second bottom electrode, 6-second piezoelectric layer, 7-second top electrode, 81-first conductor layer, 82-second conductor layer, 9-cavity, 10-insulating layer, 11-isolation layer, 12-middle layer, 13-gap, first through hole 14, second through hole 15. DETAILED DESCRIPTION
[0037] Figure 1 This is a schematic diagram of the connection method of an existing resonator component, including a first resonator and a second resonator adjacently arranged on the surface of a substrate 1'. The first resonator includes a first cavity 2', a first bottom electrode 3', a first piezoelectric layer 4', and a first top electrode 5' sequentially arranged on the surface of the substrate 1'. The second resonator includes a second cavity 6', a second bottom electrode 7', a second piezoelectric layer 8', and a second top electrode 9' sequentially arranged on the surface of the substrate 1'. The four-layer overlapping area of the first bottom electrode 3', the first piezoelectric layer 4', the first top electrode 5', and the first cavity 2' of the first resonator forms a first effective resonance area. The four-layer overlapping area of the second bottom electrode 7', the second piezoelectric layer 8', the second top electrode 9', and the second cavity 6' of the second resonator forms a second effective resonance area. Figure 1 It can be seen that the connection method between the first resonator and the second resonator includes the following Figure 1 The top electrodes shown in a are connected to each other to form a resonator component, or as shown in Figure 1 b. Bottom electrodes are connected to each other to form a resonator component, or Figure 1c The top electrode and the bottom electrode are interconnected to form a resonator component, but no matter which of the above methods is used, there must be connection ports between the electrodes, and the electrode external connection ends extending outward for connecting to other external components, and there is a certain degree of overlap between the electrode external connection ends and the piezoelectric layer, which in turn generates parasitic resonance at the edge of the resonance area, thereby affecting the performance of the resonator and the resonator component; in addition, the wiring of the electrode external connection ends is long, especially in high-frequency conditions, the electrode thickness is thin, the resistance at the connection is large, there is a large electrical loss, which affects the device performance, on the other hand, the increase in resistance will also lead to increased heat generation of the device, but the heat dissipation capacity of the device is limited, and an overheated environment will have a negative impact on the device performance, and the heat dissipation capacity of the device needs to be further improved; it should be noted that the connection positions between the devices will also occupy a certain space. If there are multiple connection positions, it will further lead to an increase in the size of the device, which will ultimately affect the device performance.
[0038] Therefore, the embodiments of the present invention provide a bulk acoustic wave resonator assembly that can solve at least one of the above-mentioned problems. The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.
[0039] In this application, the terms "comprises," "comprising," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not preclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.
[0040] Example 1
[0041] Figure 2 This is a top view of the bulk acoustic wave resonator assembly provided in Example 1 of the present utility model. Figure 3 For the Figure 2 The cross-sectional view of the BAW resonator component divided by A-A' is shown in FIG. Figure 3 As shown, the BAW resonator assembly includes a substrate 1;
[0042] The first resonator is located on the upper surface of the substrate 1 and includes a first cavity, a first bottom electrode 2, a first piezoelectric layer 3 and a first top electrode 4 that are stacked;
[0043] The second resonator is arranged adjacent to the first resonator and includes a second cavity, a second bottom electrode 5, a second piezoelectric layer 6 and a second top electrode 7 which are stacked;
[0044] The first cavity and the second cavity are interconnected, that is, the first resonator and the second resonator share a cavity 9. Hereinafter, the cavity 9 is referred to as the first cavity or the second cavity. The cavity 9 includes an underground cavity embedded in the substrate 1, or an above-ground cavity above the surface of the substrate 1. A first conductor layer 81 is provided between the first cavity and the substrate 1, a second conductor layer 82 is provided between the second cavity and the substrate 1, and a gap 13 (such as Figure 2 、 Figure 4 、 Figure 6 and Figure 8 As shown), the first conductor layer 81 and the second conductor layer 82 are not in contact, that is, the two are insulated. The first conductor layer 81 and the second conductor layer 82 are isolated by setting a gap 13 so that the device can work normally. The gap 13 can be air or filled with insulating material.
[0045] In this embodiment, at least one side of the first top electrode 4 is electrically connected to the first conductor layer 81 . At least one end of the first conductor layer 81 extends from the first cavity to the second cavity and is electrically connected to at least one side of the second bottom electrode 5 .
[0046] Furthermore, in a direction perpendicular to the plane of the substrate 1, the overlapping area of the projections of the first cavity, the first bottom electrode 2, the first piezoelectric layer 3 and the first top electrode 4 is defined as a first effective resonance area. Similarly, the overlapping area of the projections of the second cavity, the second bottom electrode 5, the second piezoelectric layer 6 and the second top electrode 7 of the second resonator in this direction is defined as a second effective resonance area. The first top electrode 4 extends beyond the edge of the first effective resonance area and is electrically connected to the first conductor layer 81 through a first through hole 14 penetrating the first piezoelectric layer 3 (e.g., Figure 3 shown), including but not limited to direct contact connection.
[0047] Specifically, an insulating layer 10 is provided at the edge of the first bottom electrode 2 corresponding to the connection between the first top electrode 4 and the first conductor layer 81. By providing the insulating layer 10, not only can the parasitic resonance phenomenon caused by the overlap of the top electrode, the piezoelectric layer and the bottom electrode at the edge of the first effective resonance area be avoided, but also the first conductor layer 81 and the first bottom electrode 2 can be isolated to avoid contact and connection between the two, which causes the resonator component to be unable to work. Moreover, the insulating layer 10 is an insulating thermally conductive material, and the heat generated by the device can be transferred from the insulating layer 10 to the substrate 1 through the first conductor layer 81 for dissipation, thereby improving the heat dissipation efficiency of the device.
[0048] Furthermore, the first bottom electrode 2 has at least one first bottom electrode 2 connection end connected to the outside; the second top electrode 7 has at least one second top electrode 7 connection end connected to the outside.
[0049] Specifically, the first bottom electrode 2 has a first bottom electrode 2 connection terminal (such as Figure 5 As shown), the connection end of the first bottom electrode 2 contacts the first conductor layer 81 at the corresponding position and extends outward from the edge of the first effective resonance region to connect to the outside. It should be noted that the insulating layer 10 can also be provided on other sides of the first bottom electrode 2 (such as Figure 4 As shown), it is sufficient to ensure that the insulating layer 10 is not provided at the edge of the connecting end of the first bottom electrode 2. Of course, the larger the contact area between the connecting end of the first bottom electrode 2 and the first conductor layer 81, the better the heat dissipation efficiency will be. Providing the insulating layer 10 on other sides can avoid the double-layer overlap of the electrode and the piezoelectric layer on the edge side of the effective resonance area, thereby reducing the parasitic resonance at the edge.
[0050] Compared with the prior art, by providing a first conductor layer 81 and a second conductor layer 82 on the surface of the substrate 1 to connect the first top electrode 4 of the first resonator and the second bottom electrode 5 of the second resonator to each other, it is avoided to provide a connection structure between the resonators or directly form a connection structure by wiring to the outside, thereby avoiding the increase in the size of the resonator assembly. The first conductor layer 81 / the second conductor layer 82 are connected to the corresponding electrodes and in contact with the substrate 1, thereby increasing the contact area between the connection end and the substrate 1, and greatly improving the heat dissipation efficiency of the device. In addition, since the first conductor layer 81 and the second conductor layer 82 are both made of metal materials, the introduction of the first conductor layer 81 and the second conductor layer 82 increases the thickness of the connection, reduces the resistance of the connection, and thus reduces the electrical loss of the device and improves the Q value. In addition, the provided insulating layer 10 can further reduce parasitic resonance at the edge of the device, avoid affecting the effective resonance area and causing acoustic energy loss, thereby affecting the performance of the device.
[0051] An isolation layer 11 (such as Figure 3-7 ), that is, an isolation layer 11 is provided between the first effective resonance region and the second effective resonance region. The isolation layer 11 is made of an insulating heat-conducting material, which can not only isolate the two resonators, but also conduct the heat energy of the effective resonance region to achieve the purpose of heat dissipation. It should be noted that the thickness of the isolation layer 11 can be consistent with the thickness of the effective resonance region, or it can be less than the thickness of the effective resonance region (such as Figure 7 shown).
[0052] Furthermore, the first and second conductor layers 81, 82 have a certain surface roughness on their sides close to the substrate 1, and the surface roughness of the first and second conductor layers 81, 82 on their sides close to the substrate 1 is greater than the surface roughness of the surfaces on their sides away from the substrate 1. By increasing the surface roughness of the first and second conductor layers 81, 82, the contact area with the substrate 1 is further increased, further improving heat dissipation efficiency. Furthermore, an intermediate layer 12 is provided between the first conductor layer 81 and the substrate 1. The material of the intermediate layer 12 is titanium, or other materials that can enhance the adhesion between the first conductor layer 81 and the substrate 1. The provision of the intermediate layer 12 enhances adhesion to the substrate 1 and prevents the first conductor layer 81 from peeling off from the substrate 1 due to excessive surface roughness. Similarly, an intermediate layer 12 can also be provided between the second conductor layer 82 and the substrate 1 to enhance adhesion between the second conductor layer 82 and the substrate 1 and prevent it from peeling off from the substrate 1 due to excessive surface roughness.
[0053] The top view of the first resonator and the second resonator shown in the present application is a rectangular shape, which can of course also be a polygon or other regular or irregular shapes, including but not limited to a quadrilateral, a pentagon, a hexagon, an ellipse, etc. Similarly, the projection of the first conductor layer 81 and the second conductor layer 82 on the substrate 1 can also be a polygon or other regular or irregular shape, and in the direction perpendicular to the plane of the substrate 1, the edges of the first conductor layer 81 and the second conductor layer 82 can be irregular concave and convex arc edge shapes (such as Figure 8 As shown in FIG5 , by providing the first conductor layer 81 and the second conductor layer 82 with irregular edge shapes, the transverse mode stray waves at the edge of the resonator can be scattered, helping to suppress the transverse mode stray waves.
[0054] Example 2
[0055] Figure 9 The C-C' cross-sectional deformation diagram of the bulk acoustic wave resonator component provided in Example 2 of the present utility model, the A-A', B-B' and D-D' cross-sectional schematic diagrams of this embodiment are the same as those in Example 1, except that: at least one end of the first bottom electrode 2 is electrically connected to the second conductor layer 82, including but not limited to direct contact connection, and at least one end of the second top electrode 7 extends beyond the edge of the second effective resonance region and is electrically connected to the second conductor layer 82, specifically, the second top electrode 7 can be electrically connected to the second conductor layer 82 by a second through hole 15 penetrating the second piezoelectric layer 6. At this time, the second bottom electrode 5 corresponding to the electrical connection is not electrically connected to the second conductor layer 82 to prevent the device from malfunctioning. An insulating layer 10 is provided at the edge of the second bottom electrode 5 corresponding to the electrical connection between the second top electrode 7 and the second conductor layer 82. As in Example 1, the insulating layer 10 can also be provided on other sides of the second bottom electrode 5 (such as Figure 4As shown), except when one side of the second bottom electrode 2 is used as an external connection end, the insulating layer 10 is not provided on this side, and the insulating layer 10 is also provided on the other sides to avoid the double-layer overlap of the electrode and the piezoelectric layer on the edge side of the effective resonance area, thereby reducing the parasitic resonance at the edge.
[0056] In addition, the first resonator and the second resonator in this embodiment both have external connection terminals. Unlike the above-mentioned embodiment, the external connection terminals in the embodiment of the present application include a first external connection terminal provided on the first top electrode 4 layer and a second external connection terminal provided on the second top electrode 7 layer, or a first external connection terminal provided on the first bottom electrode 2 layer and a second external connection terminal provided on the second bottom electrode 5 layer, that is, the two external connection terminals are either provided on the top electrode layer of the resonator to which they belong, or provided on the bottom electrode layer of the resonator to which they belong, so that each external connection terminal is located on the same layer, which reduces the difficulty of process manufacturing and facilitates integrated operation; In addition, the first bottom electrode 2 of the first resonator in this embodiment is connected to the first conductor via the first conductor. The layer 81 is connected to the second top electrode 7 of the second resonator, and the second bottom electrode 5 of the second resonator is connected to the first top electrode 4 of the first resonator through the second conductor layer 82, that is, the two resonators are connected in reverse parallel, so that the vibration directions of the first resonator and the second resonator are opposite, which can offset the nonlinear effect between the two and thus improve the performance of the resonator component; it should be noted that the connection between the first resonator and the second resonator is achieved through their respective first conductor layers 81 and second conductor layers 82, that is, the connection between the two can be achieved below the resonance area, and there is no need for a connection between the two or an external connection to achieve the connection between the resonators, which reduces the size of the resonant component to a certain extent and facilitates subsequent integration.
[0057] It should be noted that the top and bottom electrode materials in the above-mentioned embodiments 1 and 2 can be single metals or alloys such as Ti / Al / Cu / Au / Mo / Ru / Ni / W / Pt / TiN; the piezoelectric layer material can be AlN, PZT, ZnO, LiTaO3, LiNbO3, etc.; the substrate 1 material can be silicon (Si), silicon dioxide (SiO2), gallium arsenide (GaAs), glass or ceramic material; the materials of the first conductor layer 81 and the second conductor layer 82 are both metal materials with good thermal conductivity, including but not limited to copper, gold, silver, aluminum, etc.; the insulating layer 10 material is an insulating thermal conductive material, including but not limited to one of aluminum oxide, silicon oxide, boron nitride, silicon carbide or any combination thereof.
[0058] The utility model proposes a bulk acoustic wave resonator component, which achieves the following technical effects:
[0059] (1) A first conductor layer 81 and a second conductor layer 82 are provided, and the two conductor layers are insulated from each other, so that the connection between the two resonators can be realized below the effective resonance region, thereby avoiding the increase in connection sites caused by the connection between the resonators or the external wiring connection in the prior art, achieving size reduction and facilitating integration. In addition, the reduction of external connection terminals can avoid the overlap of the electrode and the piezoelectric layer in the non-effective resonance region, thereby reducing the parasitic resonance at the edge of the effective resonance region;
[0060] (2) The first conductor layer 81 and the second conductor layer 82 occupy most of the bottom surface of the cavity 9, achieving the maximum contact area with the substrate 1, which can effectively improve the heat dissipation efficiency of the device. The surface roughness of the first conductor layer 81 and the second conductor layer 82 near the substrate 1 is relatively large, which further increases the contact area between the two and dissipates heat faster. In addition, the intermediate layer 12 provided between the two can improve the adhesion and avoid the phenomenon of peeling between the layers.
[0061] (3) The first resonator and the second resonator can be connected in reverse parallel. The vibration directions of the two resonators are opposite, which can effectively offset the nonlinear effect between the two and improve the performance of the device. In addition, the external connection ends of the resonator components can be set on the same layer, simplifying the process and facilitating integration.
[0062] (4) An insulating layer 10 with thermal conductivity is provided at the edge of a portion of the effective resonance area, which improves the heat dissipation efficiency and can further reduce the overlapping area between the electrode and the piezoelectric layer, thereby reducing the parasitic resonance generated by the overlap between the two.
[0063] In this utility model, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection, electrical connection; direct connection, or indirect connection through an intermediate medium; internal communication between two components, or interaction between two components, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on specific circumstances.
[0064] In the description of the present utility model, it should be understood that the terms "upper", "lower", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. The word 'comprising' does not exclude the presence of elements or steps not listed in the claims. The word 'one' or 'an' preceding an element does not exclude the presence of multiple such elements. The simple fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used for improvement. Any reference signs in the claims should not be interpreted as limiting the scope.
[0065] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.
[0066] Obviously, those skilled in the art can make various modifications and changes to the embodiments of the present invention without departing from the spirit and scope of the present invention. In this way, if these modifications and changes are within the scope of the claims of the present invention and their equivalents, the present invention is also intended to cover these modifications and changes. The word "comprising" does not exclude the presence of other elements or steps not listed in the claims. The simple fact that certain measures are recited in mutually different dependent claims does not indicate that the combination of these measures cannot be used to advantage. Any reference signs in the claims should not be considered as limiting the scope.
Claims
1. A bulk acoustic wave resonator component, characterized in that: include: substrate; A first resonator is located on the upper surface of the substrate and includes a first cavity, a first bottom electrode, a first piezoelectric layer and a first top electrode that are stacked; a second resonator, disposed adjacent to the first resonator, comprising a second cavity, a second bottom electrode, a second piezoelectric layer, and a second top electrode that are stacked; A first conductor layer is provided between the first cavity and the substrate, a second conductor layer is provided between the second cavity and the substrate, the first conductor layer and the second conductor layer are insulated, and the first cavity and the second cavity are connected to each other; at least one side of the first top electrode is electrically connected to the first conductor layer, and at least one end of the first conductor layer extends from the first cavity to the second cavity and is electrically connected to at least one side of the second bottom electrode.
2. The BAW resonator assembly according to claim 1, wherein: The surfaces of the first conductor layer and the second conductor layer close to the substrate are rough, and the surface roughness of the first conductor layer and the second conductor layer close to the substrate is greater than that of the first conductor layer and the second conductor layer away from the substrate.
3. The BAW resonator assembly according to claim 1, wherein: An intermediate layer is provided between the first conductor layer and / or the second conductor layer and the substrate, and the intermediate layer is used to enhance adhesion.
4. The BAW resonator assembly according to claim 1, wherein: The first bottom electrode has at least one first bottom electrode connection terminal connected to the outside; the second top electrode has at least one second top electrode connection terminal connected to the outside.
5. The BAW resonator assembly according to claim 1, wherein: In a direction perpendicular to the plane of the substrate, the overlapping area of the projections of the first cavity, the first bottom electrode, the first piezoelectric layer and the first top electrode is a first effective resonance area, and the first bottom electrode is provided with an insulating layer outside the first effective resonance area, and the insulating layer is provided at least on the side where the first top electrode is electrically connected to the first conductor layer.
6. The BAW resonator assembly according to claim 1, wherein: At least one side of the second top electrode is electrically connected to the second conductor layer. At least one end of the second conductor layer extends from the second cavity to the first cavity and is electrically connected to at least one side of the first bottom electrode.
7. The BAW resonator assembly according to claim 6, wherein: In a direction perpendicular to the plane of the substrate, the overlapping area of the projections of the second cavity, the second bottom electrode, the second piezoelectric layer and the second top electrode is a second effective resonance area, and the second bottom electrode is provided with an insulating layer outside the second effective resonance area, and the insulating layer is provided at least on the side where the second top electrode is electrically connected to the second conductor layer.
8. The BAW resonator assembly according to claim 6, wherein: The first resonator is provided with a first external connection end, and the second resonator is provided with a second external connection end, the first external connection end is provided on the first bottom electrode layer, and the second external connection end is provided on the second bottom electrode layer, or the first external connection end is provided on the first top electrode layer, and the second external connection end is provided on the second top electrode layer.
9. The BAW resonator assembly according to claim 1, wherein: An isolation layer is provided between the first resonator and the second resonator, and the isolation layer is made of an insulating heat-conducting material.
10. The BAW resonator assembly according to claim 1, wherein: The projected edges of the first conductor layer and the second conductor layer on the substrate surface are irregular concave-convex arcs.