Chemical mechanical polishing equipment

By designing a height difference between the first and second pipelines in the chemical mechanical polishing equipment, the fluid is reflected on the inner wall of the first outlet, which solves the problem of insufficient cleaning of the polishing pad groove and achieves a wider cleaning effect.

CN223326128UActive Publication Date: 2025-09-12WUHAN CHUXING TECH CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202422699336.3
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-11-05
Publication Date
2025-09-12
Estimated Expiration
2034-11-05

AI Technical Summary

Technical Problem

Existing chemical mechanical polishing equipment has insufficient cleaning ability when cleaning the grooves of the polishing pad, resulting in residual by-products and affecting the cleaning effect.

Method used

A chemical mechanical polishing device is designed. By setting a surrounding first pipeline outside the second pipeline, the fluid is reflected multiple times on the inner wall of the first outlet, thereby being sprayed onto the polishing pad at more angles, thereby enhancing the cleaning effect of the groove.

Benefits of technology

The cleaning effect on the polishing pad is improved, and the fluid can be sprayed more widely into different types of grooves, thereby enhancing the cleaning ability.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN223326128U_ABST
    Figure CN223326128U_ABST
Patent Text Reader

Abstract

The utility model provides chemical mechanical polishing equipment. The equipment comprises a grinding pad, a first pipeline and a second pipeline located in the first pipeline. The second pipeline is used for transporting at least one fluid to the grinding pad; a first outlet of the first pipeline is close to the grinding pad; a second outlet of the second pipeline is close to the grinding pad; the first height from the first outlet to the polishing pad is smaller than the second height from the second outlet to the polishing pad. In a word, the surrounding first pipeline is arranged outside the second pipeline, the first height is low, and the second height is high, so that when fluid is sprayed to the grinding pad from the second outlet to clean the grinding pad, the fluid can be reflected on the inner side wall of the first outlet of the first pipeline for multiple times; therefore, the fluid can be sprayed to the grinding pad at more angles, the fluid can be sprayed into the groove more divergently, and the cleaning effect on the grinding pad is enhanced.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a chemical mechanical polishing device. Background Art

[0002] In the chemical mechanical polishing (CMP) process, a chemical mechanical polishing device is used for processing. The device includes a grinding pad with grooves on the surface of the grinding pad. During the grinding process, the wafer is placed on the grinding pad and the surface of the wafer is ground with a grinding liquid. However, some by-products produced by the wafer and particles in the grinding liquid will remain in the grooves on the surface of the grinding pad. In the related art, the surface of the grinding pad can be rinsed with high-pressure ultrapure water in order to achieve a cleaning effect on the grinding pad. However, due to the water supply pressure and the groove design of the grinding pad, as well as the limitations of the component materials, its cleaning ability will be reduced, and by-products are likely to remain inside the grooves, which has a poor cleaning effect on the grinding pad. Utility Model Content

[0003] In view of this, the purpose of this application is to provide a chemical mechanical polishing device, which enables the fluid to be sprayed onto the polishing pad at more angles and the fluid to be sprayed more divergently into the grooves, thereby enhancing the cleaning effect of the polishing pad. The specific solution is as follows:

[0004] The present application provides a chemical mechanical polishing device, comprising:

[0005] A polishing pad, a first pipeline, and a second pipeline located within the first pipeline; the second pipeline is used to transport at least one fluid to the polishing pad;

[0006] The first outlet of the first pipeline is close to the polishing pad, and the second outlet of the second pipeline is close to the polishing pad; a first height from the first outlet to the polishing pad is less than a second height from the second outlet to the polishing pad.

[0007] In a possible implementation, the first pipeline includes a first portion close to the polishing pad, and the size of the opening of the first portion increases gradually in a target direction where the first portion points to the polishing pad.

[0008] In a possible implementation, the first pipeline further includes a second portion; the second portion is located between the first portion and the polishing pad, and the caliber of the second portion remains unchanged in the target direction.

[0009] In a possible implementation, a recovery device is further included;

[0010] The first inlet of the first pipeline is connected to the recovery device; the recovery device is used to generate negative pressure in the first pipeline.

[0011] In a possible implementation, a gas-liquid separation device is further included; the gas-liquid separation device is used to separate the gas and liquid recovered by the recovery device.

[0012] In a possible implementation, the second pipeline includes a first sub-pipeline and a second sub-pipeline;

[0013] The outlet of the first sub-pipeline serves as the second outlet of the second pipeline, and the inlet of the first sub-pipeline is used for allowing the first fluid to enter;

[0014] The inlet of the second sub-pipeline is used for allowing the second fluid to enter, and the outlet of the second sub-pipeline is communicated with the first sub-pipeline.

[0015] In a possible implementation, an outlet cleaning device is further included; the opening of the outlet cleaning device faces the first outlet and is used to clean the first outlet and the second outlet.

[0016] In a possible implementation manner, the multiple openings of the outlet cleaning device have different angles toward the first outlet.

[0017] In a possible implementation, it further includes a robotic arm;

[0018] The first pipeline is connected to the robotic arm, and the robotic arm is used to control the movement of the first pipeline.

[0019] In a possible implementation, a trimmer is further included;

[0020] The first pipeline is arranged on the periphery of the trimmer, and the trimmer is connected to the robotic arm.

[0021] An embodiment of the present application provides a chemical mechanical polishing device, which includes a polishing pad, a first pipeline, and a second pipeline located within the first pipeline; the second pipeline is used to transport at least one fluid to the polishing pad; a first outlet of the first pipeline is close to the polishing pad, and a second outlet of the second pipeline is close to the polishing pad; a first height of the first outlet from the polishing pad is less than a second height of the second outlet from the polishing pad. In short, by providing a surrounding first pipeline outside the second pipeline, with a low first height and a high second height, when the second outlet sprays fluid onto the polishing pad to clean the polishing pad, the fluid can be reflected multiple times on the inner side wall of the first outlet of the first pipeline, so that the fluid can be sprayed onto the polishing pad at more angles and the fluid can be sprayed more divergently into the groove, thereby enhancing the cleaning effect on the polishing pad. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0023] Figure 1 A schematic structural diagram of a chemical mechanical polishing device provided in an embodiment of the present application is shown;

[0024] Figure 2 A schematic structural diagram of another chemical mechanical polishing device provided in an embodiment of the present application is shown;

[0025] Figure 3 A schematic structural diagram of another chemical mechanical polishing device provided in an embodiment of the present application is shown;

[0026] Figure 4 A structural schematic diagram of another chemical mechanical polishing device provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0027] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below with reference to the accompanying drawings.

[0028] In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application may also be implemented in other ways different from those described herein. Those skilled in the art may make similar generalizations without violating the connotation of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0029] Secondly, this application is described in detail with reference to schematic diagrams. When describing the embodiments of this application, for ease of explanation, cross-sectional views of device structures may be partially enlarged and not to scale. Furthermore, these schematic diagrams are merely illustrative and should not limit the scope of protection of this application. Furthermore, in actual production, three-dimensional dimensions, including length, width, and depth, should be included.

[0030] As described in the background technology, in the related art, high-pressure ultrapure water can be used to rinse the surface of the polishing pad in order to clean the polishing pad. However, due to the limitations of the water supply pressure and the groove design of the polishing pad, as well as the limitations of the component materials, its cleaning ability will be reduced, and by-products are likely to remain inside the groove, which has a poor cleaning effect on the polishing pad.

[0031] Based on the above technical problems, an embodiment of the present application provides a chemical mechanical polishing device, which includes a polishing pad, a first pipeline, and a second pipeline located in the first pipeline; the second pipeline is used to transport at least one fluid to the polishing pad; the first outlet of the first pipeline is close to the polishing pad, and the second outlet of the second pipeline is close to the polishing pad; the first height of the first outlet from the polishing pad is less than the second height of the second outlet from the polishing pad. In short, by setting a surrounding first pipeline outside the second pipeline, with the first height being low and the second height being high, when the second outlet sprays fluid to the polishing pad to clean the polishing pad, the fluid can be reflected multiple times on the inner side wall of the first outlet of the first pipeline, so that the fluid can be sprayed onto the polishing pad at more angles, and the fluid can be sprayed more divergently into the groove, thereby enhancing the cleaning effect on the polishing pad.

[0032] For ease of understanding, a chemical mechanical polishing device provided in an embodiment of the present application is described in detail below with reference to the accompanying drawings.

[0033] refer to Figure 1 , which is a schematic structural diagram of a chemical mechanical polishing device provided in an embodiment of the present application, the device includes a polishing pad 100 , a first pipeline 101 , and a second pipeline 102 located in the first pipeline 101 .

[0034] The surface of the polishing pad 100 has a large number of grooves, for example, a circle of circular grooves. The first pipeline 101 surrounds the second pipeline 102, and the second pipeline 102 is used to transport at least one fluid to the polishing pad 100. The first outlet 103 of the first pipeline 101 is close to the polishing pad 100, and the second outlet 104 of the second pipeline 102 is close to the polishing pad 100.

[0035] That is, the fluid can flow in the second pipe 102, and the fluid can flow into the second pipe 102 from the inlet and flow out through the second outlet 104 of the second pipe 102, that is, flow to the polishing pad 100 through the second outlet 104 of the second pipe 102, so as to clean the surface of the polishing pad 100. As an example, the fluid can be a gas or a liquid, such as water, carbon dioxide, air, etc.

[0036] The first outlet 103 is at a first height h1 from the polishing pad 100, which is less than the second height h2 from the second outlet 104. The distance between the first outlet 103 of the first conduit 101 and the surface of the polishing pad 100 is the first height h1, and the distance between the second outlet 104 of the second conduit 102 and the surface of the polishing pad 100 is the second height h2. The first height h1 is less than the second height h2, meaning that the second outlet 104 is further away from the surface of the polishing pad 100 than the first outlet 103.

[0037] In this way, by setting up a surrounding first pipeline 101 outside the second pipeline 102, with a low first height h1 and a high second height h2, the outside is high and the inside is low, so that when the second outlet 104 sprays fluid to the polishing pad 100 to clean the polishing pad 100, the fluid can be reflected multiple times on the inner wall of the first outlet 103 of the first pipeline 101, so that the fluid can be sprayed onto the polishing pad 100 at more angles, and the fluid can be sprayed more divergently into the groove, thereby enhancing the cleaning effect of the polishing pad 100, and can be more widely applicable to polishing pad structures with different groove types.

[0038] In a possible implementation, the first pipeline 101 includes a first portion 1011 close to the polishing pad 100 . When the first portion 1011 points in a target direction of the polishing pad 100 , the size of the opening of the first portion 1011 increases gradually.

[0039] Specifically, a portion of the first pipeline 101 close to the polishing pad 100 can be recorded as the first portion 1011. As an example, if the first pipeline 101 includes a connected horizontal portion and a vertical portion, and the vertical portion is closer to the polishing pad 100, the vertical portion can be recorded as the first portion 1011. Of course, a portion of the vertical portion can also be recorded as the first portion 1011, for example, a portion of the vertical portion closer to the polishing pad 100 can be recorded as the first portion 1011.

[0040] The first portion 1011 points to the target direction of the polishing pad 100, that is, the vertically downward direction. That is, in the vertically downward direction, the diameter of the first portion 1011 can gradually become larger. Figure 1 As shown, the first portion 1011 is designed like a bell mouth, and the diameter of the first outlet 103 gradually becomes larger. As an example, the entire vertical portion can be designed like a bell mouth.

[0041] By designing the first portion 1011 of the first pipeline 101 to have a gradually larger diameter, the fluid can be more reflected on the inner wall of the first portion 1011, further increasing the incident angle of the fluid entering the polishing pad 100 and enhancing the cleaning effect.

[0042] In a possible implementation, the first pipeline 101 further includes a second portion 1012 . The second portion 1012 is located between the first portion 1011 and the polishing pad 100 . In the target direction, the size of the aperture of the second portion 1012 remains unchanged.

[0043] That is, reference Figure 2As shown, for the first pipeline 101, it can include not only a first part 1011 with a gradually increasing diameter, but also a second part 1012 with a constant diameter, and the second part 1012 is closer to the polishing pad 100 than the first part 1011, so that the second part 1012 can have a certain gathering effect on the fluid, so that the fluid is reflected multiple times within the diameter range of the first outlet 103.

[0044] In a possible implementation, the device may further include a recovery device 105 , and the first inlet of the first pipeline 101 is connected to the recovery device 105 ; the recovery device 105 is used to generate negative pressure in the first pipeline 101 .

[0045] Specifically, the opening of the first pipeline 101 away from the polishing pad 100 can be recorded as the first inlet, and the first inlet can be connected to the recovery device 105, such as Figure 3 As shown, the recovery device 105 generates negative pressure in the first pipeline 101, so that the fluid can be absorbed into the recovery device 105 after cleaning the polishing pad 100, thereby realizing the recovery of the fluid, thereby preventing the fluid from spraying the residue on the polishing pad 100 to other places during the cleaning process, causing secondary pollution, and realizing timely adsorption and discharge of the residue.

[0046] In a possible implementation, the device may further include a gas-liquid separation device, which is used to separate the gas and liquid recovered by the recovery device 105.

[0047] Specifically, the fluid recovered by the recovery device 105 may include gas and liquid. The gas-liquid separation device may separate the gas and liquid, thereby facilitating their separate recycling. As an example, the gas-liquid separation device may be located inside the recovery device 105 .

[0048] In one possible implementation, the second pipeline 102 may include a first sub-pipeline 1021 and a second sub-pipeline 1022, the outlet of the first sub-pipeline 1021 serves as the second outlet 104 of the second pipeline 102, the inlet of the first sub-pipeline 1021 is used to allow the first fluid to enter; the inlet of the second sub-pipeline 1022 is used to allow the second fluid to enter, and the outlet of the second sub-pipeline 1022 is connected to the first sub-pipeline 1021.

[0049] refer to Figure 3As shown, the first sub-pipeline 1021 is used to circulate a first fluid, which flows into the first sub-pipeline 1021 from its inlet and flows out from its outlet. In other words, the outlet of the first sub-pipeline 1021 is the outlet of the second pipe 102. The second sub-pipeline 1022 is used to circulate a second fluid, which flows into the second sub-pipeline 1022 from its inlet and flows into the first sub-pipeline 1021 through its outlet, where it mixes with the first fluid and then flows out through the outlet of the first sub-pipeline 1021.

[0050] By using two sub-pipelines to transport two fluids, the cleaning effect on the polishing pad 100 can be enhanced. For example, the first fluid is water, and the second fluid is carbon dioxide. When the two fluids mix, they produce oxalic acid, which has a better cleaning effect on the polishing pad 100. In addition, the fluid pressure can be adjusted at the inlet of each sub-pipeline to meet actual process requirements.

[0051] In a possible implementation, the device may further include an outlet cleaning device 106 , the opening of which faces the first outlet 103 and is used to clean the first outlet 103 and the second outlet 104 .

[0052] refer to Figure 4 As shown, the outlet cleaning device 106 can clean the first outlet 103 and the second outlet 104 of the first pipeline 101 to achieve a fan-shaped fluid injection angle. It can be performed before cleaning the polishing pad 100 or after cleaning the polishing pad 100, thereby making the inner walls of the first outlet 103 and the second outlet 104 cleaner and ensuring a better cleaning effect on the polishing pad 100.

[0053] In one possible implementation, the outlet cleaning device 106 may have multiple openings, all of which face the first outlet 103. However, the multiple openings of the outlet cleaning device 106 face the first outlet 103 at different angles, thereby enabling the entire inner wall of the first outlet 103 and the second outlet 104 to be completely cleaned, avoiding missing corners and achieving a better cleaning effect on the first outlet 103 and the second outlet 104. Figure 4 As shown, the outlet cleaning device 106 has three openings, and the three openings face at different angles.

[0054] In one possible implementation, the device may also include a robotic arm, and the first pipeline 101 is connected to the robotic arm. The robotic arm is used to control the movement of the first pipeline 101, thereby controlling the cleaning of different areas of the polishing pad 100 to achieve comprehensive cleaning of the surface of the polishing pad 100.

[0055] In a possible implementation, the device may further include a trimmer, the first pipeline 101 is disposed on the periphery of the trimmer, and the trimmer is connected to a robotic arm, so that the first pipeline 101 can move along with the trimmer, simplifying the mechanical structure.

[0056] An embodiment of the present application provides a chemical mechanical polishing device, which includes a polishing pad, a first pipeline, and a second pipeline located within the first pipeline; the second pipeline is used to transport at least one fluid to the polishing pad; a first outlet of the first pipeline is close to the polishing pad, and a second outlet of the second pipeline is close to the polishing pad; a first height of the first outlet from the polishing pad is less than a second height of the second outlet from the polishing pad. In short, by providing a surrounding first pipeline outside the second pipeline, with a low first height and a high second height, when the second outlet sprays fluid onto the polishing pad to clean the polishing pad, the fluid can be reflected multiple times on the inner side wall of the first outlet of the first pipeline, so that the fluid can be sprayed onto the polishing pad at more angles and the fluid can be sprayed more divergently into the groove, thereby enhancing the cleaning effect on the polishing pad.

[0057] The various embodiments in this specification are described in a progressive manner. Similar portions between the various embodiments can be referenced to each other. Each embodiment focuses on the differences from the other embodiments. In particular, the method embodiments are described briefly because they are generally similar to the apparatus embodiments. For relevant portions, refer to the description of the apparatus embodiments.

[0058] The above is only a preferred embodiment of the present application. Although the present application has been disclosed as a preferred embodiment, it is not intended to limit the present application. Any technician familiar with the art can use the above-disclosed methods and technical contents to make many possible changes and modifications to the technical solution of the present application without departing from the scope of the technical solution of the present application, or modify it into an equivalent embodiment with equivalent changes. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application are still within the scope of protection of the technical solution of the present application.

Claims

1. A chemical mechanical polishing device, characterized in that: include: A polishing pad, a first pipeline, and a second pipeline located in the first pipeline; The second pipeline is used to transport at least one fluid to the polishing pad; The first outlet of the first pipe is close to the polishing pad, and the second outlet of the second pipe is close to the polishing pad; A first height between the first outlet and the polishing pad is smaller than a second height between the second outlet and the polishing pad.

2. The chemical mechanical polishing equipment according to claim 1, characterized in that The first pipeline includes a first portion close to the polishing pad. When the first portion points to a target direction of the polishing pad, the size of the opening of the first portion increases gradually.

3. The chemical mechanical polishing equipment according to claim 2, characterized in that The first pipeline further includes a second portion; the second portion is located between the first portion and the polishing pad, and the size of the aperture of the second portion remains unchanged in the target direction.

4. The chemical mechanical polishing equipment according to claim 1, characterized in that Also includes recovery devices; The first inlet of the first pipeline is connected to the recovery device; the recovery device is used to generate negative pressure in the first pipeline.

5. The chemical mechanical polishing equipment according to claim 4, characterized in that: It also includes a gas-liquid separation device; the gas-liquid separation device is used to separate the gas and liquid recovered by the recovery device.

6. The chemical mechanical polishing equipment according to claim 1, characterized in that The second pipeline includes a first sub-pipeline and a second sub-pipeline; The outlet of the first sub-pipeline serves as the second outlet of the second pipeline, and the inlet of the first sub-pipeline is used for allowing the first fluid to enter; The inlet of the second sub-pipeline is used for allowing the second fluid to enter, and the outlet of the second sub-pipeline is communicated with the first sub-pipeline.

7. The chemical mechanical polishing equipment according to claim 1, characterized in that An outlet cleaning device is also included; the opening of the outlet cleaning device faces the first outlet and is used for cleaning the first outlet and the second outlet.

8. The chemical mechanical polishing equipment according to claim 7, characterized in that: The plurality of openings of the outlet cleaning device are arranged at different angles toward the first outlet.

9. The chemical mechanical polishing equipment according to claim 1, characterized in that: Also includes a robotic arm; The first pipeline is connected to the robotic arm, and the robotic arm is used to control the movement of the first pipeline.

10. The chemical mechanical polishing equipment according to claim 9, characterized in that: Also includes trimmers; The first pipeline is arranged on the periphery of the trimmer, and the trimmer is connected to the robotic arm.