Plasma processing apparatus

Abstract

The embodiment of the utility model provides a plasma processing device, relates to the technical field of semiconductors, and aims to solve the problem of poor etching uniformity caused by consumption of a focusing ring in a plasma processing device in the prior art. The plasma processing device comprises a shell, a chuck, a focusing ring and a wire. The shell comprises a top plate, a bottom plate and a first side plate, and the first side plate is circumferentially arranged around the top plate and the bottom plate to form a treatment cavity. The chuck is arranged in the processing cavity, and the chuck is configured to bear a substrate to be processed. The focusing ring is arranged around the chuck in the circumferential direction. The wire is arranged in the processing cavity and located on the side, away from the chuck, of the focusing ring, the extending direction of the wire is perpendicular to the plane where the surface of the focusing ring and the surface of the chuck are located, and the wire is configured to transmit current pointing to the bottom plate from the top plate under the condition that the lowest surface of the focusing ring is lower than the highest surface of the substrate to be processed. The plasma processing device is used for carrying out etching processing on the substrate to be processed.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a plasma processing device. Background Art

[0002] Plasma etching is a common process in semiconductor integrated circuit manufacturing. The sheath is a key factor influencing the plasma's trajectory. However, in plasma etching equipment, the plasma sheath at the wafer edge is discontinuous, causing the plasma's trajectory to shift. The focusing ring is crucial for optimizing the sheath profile at the wafer edge.

[0003] However, as the etching process time increases, the plasma etches the focusing ring while etching the substrate to be processed, causing the focusing ring to be consumed, and then affecting the uniform distribution of the sheath profile above the focusing ring, causing the plasma movement trajectory to shift, thereby reducing the uniformity of the etching process. Utility Model Content

[0004] The present disclosure provides a plasma processing device for etching a substrate to be processed, so as to solve the problem in the related art that the focus ring in the plasma processing device is consumed, resulting in poor etching uniformity.

[0005] In some embodiments, a plasma processing apparatus includes a housing, a chuck, a focus ring, and a conductive wire. The housing includes a top plate, a bottom plate, and a first side plate, wherein the first side plate is circumferentially disposed around the top plate and the bottom plate to form a processing chamber. The chuck is disposed within the processing chamber and is configured to support a substrate to be processed. The focus ring is circumferentially disposed around the chuck. At least one conductive wire is disposed within the processing chamber and is located on a side of the focus ring away from the chuck, with the conductive wire extending perpendicular to the plane of the focus ring and the chuck.

[0006] In this case, the wire is configured to transmit current in the direction from the top plate to the bottom plate when the lowest surface of the focusing ring is lower than the highest surface of the substrate to be processed. When the lowest surface of the focusing ring is lower than the highest surface of the substrate to be processed, the wire transmits current in the direction from the top plate to the bottom plate, which will generate a circular magnetic field in the processing chamber. Under the action of the electric field and the magnetic field, the moving plasma will be affected by the Lorentz force, causing the motion trajectory of the plasma to change from the first direction to the second direction, that is, the motion trajectory of the plasma can be made roughly the same as the motion trajectory of the plasma when the focusing ring is not consumed, thereby making the etching rate of the edge area and the center area of ​​the substrate to be processed roughly the same, thereby improving the uniformity of the etching process.

[0007] In some embodiments, the plasma processing apparatus further includes a DC power supply and a processing module. The DC power supply is disposed outside the housing and includes a positive electrode and a negative electrode, with the positive electrode connected to one end of the wire and the negative electrode connected to the other end of the wire. The processing module is connected to the DC power supply and disposed outside the housing. The processing module is configured to control the DC power supply to transmit current to the wire when the lowest surface of the focus ring is lower than the highest surface of the substrate to be processed.

[0008] In some embodiments, the plasma processing apparatus further includes a detection module, the detection module being connected to the processing module and disposed within the processing chamber. The orthographic projection of the focus ring on the base plate overlaps with the orthographic projection of the detection module on the base plate. The detection module is configured to detect the distance between the detection module and the focus ring, and the processing module is specifically configured to control the DC power supply to transmit current to the conductive wire when the distance between the detection module and the focus ring is less than a preset value.

[0009] In some embodiments, the focus ring has multiple target detection areas, and the detection module includes multiple detection probes spaced apart along the circumference of the chuck. Each detection probe is configured to detect the distance between the detection probe and a target detection area of ​​the focus ring. The plasma processing apparatus includes multiple wires, with at least one wire being disposed on a side of a target detection area of ​​the focus ring away from the chuck.

[0010] In some embodiments, the plasma processing apparatus further includes a second side plate disposed within the processing chamber. The second side plate is disposed around the focus ring, with one end abutting the top plate and the other end abutting the bottom plate. Furthermore, the second side plate has a through hole extending from the top plate toward the bottom plate, extending through the second side plate; a wire is disposed within the through hole.

[0011] In some embodiments, the material of the second side plate includes a diamagnetic material.

[0012] In some embodiments, the diamagnetic material includes quartz.

[0013] In some embodiments, the plasma processing apparatus further includes a susceptor, the chuck is disposed on the susceptor, and the susceptor is electrically connected to the chuck.

[0014] In some embodiments, the plasma processing apparatus further includes an injection module connected to the top plate and disposed in the processing chamber. The injection module has a nozzle disposed toward the chuck.

[0015] In some embodiments, the plasma processing apparatus further includes a first electrode and a second electrode. The first electrode is connected to the top plate and disposed within the processing chamber. The second electrode is connected to the bottom plate and disposed within the processing chamber. The first electrode and the second electrode are at least partially opposed to each other.

[0016] It should be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] To more clearly illustrate the technical solutions of the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and are not intended to limit the actual dimensions of the products, actual processes of the methods, etc. involved in the embodiments of the present disclosure.

[0018] Figure 1 A structural diagram of a plasma processing device having a non-consumable focusing ring according to some embodiments;

[0019] Figure 2 A structural diagram of a plasma processing device having a consumed focus ring according to some embodiments;

[0020] Figure 3 for Figure 2 A sectional view along section line AA;

[0021] Figure 4 is a schematic diagram of a motion trajectory of plasma according to some embodiments;

[0022] Figure 5 FIG. 4 is a graph showing the relationship between power consumption and current intensity according to some embodiments.

[0023] In the figure, 100 is a plasma processing device; 200 is a substrate to be processed; 10 is a shell; 11 is a top plate; 12 is a bottom plate; 13 is a first side plate; 14 is a processing chamber; 20 is a chuck; 21 is a base; 22 is a radio frequency power supply; 23 is a second electrode; 30 is a focusing ring; 31 is a target detection area; 40 is an injection module; 41 is a nozzle; 42 is a first electrode; 50 is a wire; 60 is a DC power supply; 61 is a positive electrode; 62 is a negative electrode; 70 is a processing module; 80 is a detection module; 81 is a detection probe; 90 is a second side plate; 91 is a through hole. DETAILED DESCRIPTION

[0024] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the embodiments described are only some of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

[0025] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and its other forms, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open and inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to indicate that the specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0026] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0027] When describing some embodiments, the word "connected" and its derivatives may be used. The term "connected" should be understood broadly. For example, "connected" can mean mechanical or electrical connection; fixed or removable connection; or integral connection; direct connection or indirect connection through an intermediary; or internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in this document based on the specific circumstances.

[0028] “At least one of A, B and C” has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.

[0029] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0030] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0031] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, that the difference between the two equals is less than or equal to 5% of either one.

[0032] In this disclosure, terms such as "lower," "below," "above," and "upper," and similar terms are used to explain the relationships between components shown in the drawings. These terms may be relative and described based on directions shown in the drawings, or based on the order in which process steps are formed, but are not limited thereto.

[0033] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0034] like Figure 1As shown, some embodiments of the present disclosure provide a plasma processing apparatus 100 for etching a substrate 200 to be processed. The plasma processing apparatus 100 includes a housing 10 and a chuck 20. The housing 10 includes a top plate 11, a bottom plate 12, and a first side plate 13. The top plate 11 and the bottom plate 12 are disposed opposite each other, and the first side plate 13 is disposed circumferentially around the top plate 11 and the bottom plate 12 to form a processing chamber 14. The chuck 20 is disposed within the processing chamber 14 and is configured to support the substrate 200 to be processed.

[0035] In some examples, such as Figure 1 As shown, the plasma processing apparatus 100 further includes a susceptor 21 and an RF power supply 22. The susceptor 21 and the RF power supply 22 are electrically connected, providing a low-frequency RF signal to the susceptor 21. A chuck 20 is disposed on the susceptor 21 and electrically connected to the chuck 20. This allows the substrate 200 to be electrostatically attracted to the chuck 20, thereby improving the stability of the substrate 200 during etching.

[0036] In some examples, such as Figure 1 As shown, the plasma processing apparatus 100 further includes an injection module 40, which is connected to the top plate 11 and disposed in the processing chamber 14. The injection module 40 has a nozzle 41, which is disposed toward the chuck 20. The injection module 40 is used to inject etching gas.

[0037] In addition, if Figure 1 As shown, the injection module 40 is also connected to the RF power supply 22, so that the RF power supply 22 provides a high-frequency RF signal to the injection module 40 to generate plasma. At the same time, the RF power supply 22 provides a low-frequency RF signal to the base 21 to provide energy for the plasma and configure the incident angle of the plasma.

[0038] Exemplarily, the etching gas is one of carbon tetrafluoride (CF4), octafluorocyclobutane (C4F8), and oxygen (O2).

[0039] In other examples, such as Figure 1 As shown, the plasma processing apparatus 100 further includes a first electrode 42 and a second electrode 23. The first electrode 42 is connected to the top plate 11 and disposed within the processing chamber 14. The second electrode 23 is connected to the bottom plate 12 and disposed within the processing chamber 14, with the first electrode 42 and the second electrode 23 at least partially facing each other. Furthermore, the first electrode 42 and the second electrode 23 are each connected to an RF power supply 22. The RF power supply 22 can provide an RF signal to one of the first electrode 42 and the second electrode 23 while grounding the other. Alternatively, the RF power supply 22 can provide different RF signals to the first electrode 42 and the second electrode 23, respectively, thereby generating an electric field between the first electrode 42 and the second electrode 23.

[0040] In this case, after the nozzle 41 ejects the etching gas into the processing chamber 14, the electric field between the first electrode 42 and the second electrode 23 causes the etching gas to be ionized and excited, thereby generating plasma. Under the action of the electric field, the plasma is accelerated toward the second electrode 23, bombarding the surface of the substrate 200 to be processed, causing its material to be sputtered and / or combining with neutral particles in the substrate 200 to be processed to form volatile gas products, thereby completing the etching process on the substrate 200 to be processed.

[0041] In some embodiments, as Figure 1 As shown, the plasma processing apparatus 100 further includes a focus ring 30, which is disposed circumferentially around the chuck 20 and is configured to improve the distribution and morphology of the plasma sheath at the edge of the substrate 200 to be processed, thereby ensuring uniformity of the etching process at the edge of the substrate 200 to be processed. The focus ring 30 is made of silicon or silicon carbide.

[0042] like Figure 2 As shown, as the etching process time accumulates, the surface of the focusing ring 30 will also be consumed by plasma etching, and the surface height of the focusing ring 30 will decrease, causing the plasma sheath above the focusing ring 30 to move downward and the movement trajectory of the plasma to shift, which will cause the etching rate of the edge area of ​​the substrate 200 to be processed to become faster, reducing the uniformity of the etching process.

[0043] Based on this, see Figure 1 、 Figure 2 、 Figure 3 and Figure 4 The plasma processing apparatus 100 provided by some embodiments of the present disclosure further includes a wire 50, which is disposed within the processing chamber 14 and located on a side of the focus ring 30 away from the chuck 20. The wire 50 extends perpendicular to the plane in which the surfaces of the focus ring 30 and the chuck 20 lie. The wire 50 is configured to transmit current in a direction from the top plate 11 to the bottom plate 12 when the lowest surface of the focus ring 30 is lower than the highest surface of the substrate 200 to be processed.

[0044] In this case, when the lowest surface of the focus ring 30 is lower than the highest surface of the substrate 200 to be processed, the wire 50 transmits current in a direction from the top plate 11 to the bottom plate 12, which will generate a circular magnetic field B in the processing chamber 14 (the direction of the generated magnetic field B is as shown in FIG. Figure 3 and Figure 4 As shown), the moving plasma will be affected by the Lorentz force F under the action of the electric field and magnetic field (the direction of the Lorentz force F is as shown in Figure 3 As shown in FIG), the motion trajectory of the plasma changes from the first direction v1 to the second direction v2 (the first direction v1 and the second direction v2 are as shown in FIG). Figure 3 As shown), the motion trajectory of the plasma can be made roughly the same as the motion trajectory of the plasma when the focusing ring 30 is not consumed, thereby making the etching rate of the edge area and the central area of ​​the substrate 200 to be processed roughly the same, thereby improving the uniformity of the etching process.

[0045] In some embodiments, as Figure 1 、 Figure 2 and Figure 3 As shown, the plasma processing apparatus 100 further includes a DC power supply 60 and a processing module 70. The DC power supply 60 and the processing module 70 are disposed on the outside of the housing 10. The DC power supply 60 includes a positive electrode 61 and a negative electrode 62; the positive electrode 61 is connected to one end of the wire 50, and the negative electrode 62 is connected to the other end of the wire 50, so as to provide the wire 50 with a current whose direction is directed from the top plate 11 to the bottom plate 12. The processing module 70 is connected to the DC power supply 60, and the processing module 70 is configured to control the DC power supply 60 to transmit current to the wire 50 when the lowest surface of the focusing ring 30 is lower than the highest surface of the substrate 200 to be processed, so as to make the motion trajectory of the plasma substantially the same as the motion trajectory of the plasma when the focusing ring 30 is not consumed, thereby improving the uniformity of the etching process in the edge area of ​​the substrate 200 to be processed.

[0046] In some embodiments, as Figure 1 and Figure 2 As shown, the plasma processing apparatus 100 further includes a detection module 80. The detection module 80 is connected to the processing module 70 and is disposed within the processing chamber 14. The orthographic projection of the focus ring 30 on the base plate 12 overlaps with the orthographic projection of the detection module 80 on the base plate 12. The detection module 80 is configured to detect the distance between the detection module 80 and the focus ring 30. Furthermore, the processing module 70 is specifically configured to control the DC power supply 60 to transmit current to the wire 50 when the distance between the detection module 80 and the focus ring 30 is greater than a preset value, so as to automatically adjust the plasma motion trajectory of the edge region of the substrate 200 to be processed, thereby effectively improving the practicality of the plasma processing apparatus 100.

[0047] It should be noted that, during the process of plasma etching the surface of the substrate 200, the surface of the focus ring 30 will also be consumed. In this case, the distance between the detection module 80 and the initial surface of the focus ring 30 is defined as L (the distance L of the initial surface is as follows: Figure 2 As the etching process time accumulates, the surface of the focus ring 30 is consumed, which affects the etching effect of the edge area of ​​the substrate 200 to be processed. At this time, the surface consumption of the focus ring 30 is defined as ΔL (the consumption ΔL is shown in FIG. Figure 2The above-mentioned preset value refers to the distance L+ΔL between the detection module 80 and the surface of the focus ring 30 when the etching effect of the edge area of ​​the substrate 200 to be processed is affected.

[0048] In some embodiments, as Figure 5 As shown, the plasma etching rate of substrate 200 to be processed was tested under different surface consumption conditions of focus ring 30. A greater surface consumption leads to a greater deviation in the plasma trajectory, a greater Lorentz force required to correct its direction of motion, and, according to the formulas B = μI / 2πr and F = qvB, a greater current intensity transmitted by wire 50. This indicates a positive correlation between the surface consumption of focus ring 30 and the current intensity required to be transmitted by wire 50. This relationship curve is imported into processing module 70 to automatically adjust the plasma trajectory at the edge of substrate 200 to be processed.

[0049] In some embodiments, as Figure 1 、 Figure 2 and Figure 3 As shown, the focus ring 30 has multiple target detection areas 31. The detection module 80 includes multiple detection probes 81, which are spaced apart along the circumference of the chuck 20. Each detection probe 81 is configured to detect the distance between the detection probe 81 and a target detection area 31 of the focus ring 30. The plasma processing apparatus 100 includes multiple wires 50, with at least one wire 50 being provided on a side of each target detection area 31 of the focus ring 30 away from the chuck 20.

[0050] In this case, multiple detection probes 81 can detect the consumption of different target detection areas 31 of the focusing ring 30, and adjust the movement trajectory of the plasma above the target detection area 31 by transmitting currents of different magnitudes to the wire 50 on the side of the target detection area 31 away from the chuck 20. This ensures that when the consumption of different detection areas 31 of the focusing ring 30 is different, the movement trajectory of the plasma above the corresponding area can be effectively adjusted, thereby improving the flexibility of adjustment and the uniformity of the etching effect in the edge area of ​​the substrate 200 to be processed.

[0051] It should be noted that the multiple detection probes 81 are used to detect the distance between the detection probes 81 and multiple target points on the focus ring 30. The multiple target points divide the surface of the focus ring 30 into multiple sector-shaped areas, namely the above-mentioned target detection areas 31. Among them, one target detection area 31 includes one target point.

[0052] In some examples, the detection module 80 includes six detection probes 81. The detection probes 81 include electronic rangefinders. For example, the detection probes 81 are one of a laser rangefinder, an ultrasonic rangefinder, and an infrared rangefinder.

[0053] In some embodiments, as Figure 1 and Figure 2 As shown, the plasma processing apparatus 100 further includes a second side plate 90, which is disposed within the processing chamber 14. The second side plate 90 is disposed around the focus ring 30, with one end abutting against the top plate 11 and the other end abutting against the bottom plate 12, thereby forming a working chamber, allowing the plasma to etch the substrate 200 to be processed within the working chamber. Furthermore, the second side plate 90 is provided with a through hole 91 extending from the top plate 11 toward the bottom plate 12 and extending through the second side plate 90. The wire 50 is disposed within the through hole 91 to prevent the wire 50 from being consumed during the plasma etching process on the substrate 200 to be processed, thereby extending the service life of the wire 50.

[0054] The second side plate 90 is made of a diamagnetic material. The diamagnetic material does not change the functional characteristics of the magnetic field, thereby ensuring the stability of the magnetic field and improving the reliability of the plasma processing apparatus 100. Exemplarily, the diamagnetic material includes quartz. For example, the diamagnetic material is silicon dioxide (SiO2).

[0055] The above are only specific embodiments of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in this disclosure should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A plasma processing device for etching a substrate to be processed, characterized in that: include: A housing, comprising a top plate, a bottom plate and a first side plate; The first side plate is circumferentially arranged around the top plate and the bottom plate to form a processing chamber; A chuck is disposed in the processing chamber; the chuck is configured to carry the substrate to be processed; a focusing ring, arranged around the circumference of the chuck; At least one wire is disposed in the processing chamber and is located on a side of the focus ring away from the chuck; an extension direction of the wire is perpendicular to a plane where a surface of the focus ring and a surface of the chuck are located.

2. The plasma processing apparatus according to claim 1, wherein Also includes: A DC power supply is provided outside the housing; the DC power supply includes a positive electrode and a negative electrode; the positive electrode is connected to one end of the wire, and the negative electrode is connected to the other end of the wire; A processing module is connected to the DC power supply; the processing module is arranged on the outside of the shell; and the processing module is configured to control the DC power supply to transmit current to the wire when the lowest surface of the focusing ring is lower than the highest surface of the substrate to be processed.

3. The plasma processing apparatus according to claim 2, wherein: Also includes: A detection module connected to the processing module; the detection module is disposed in the processing chamber; The orthographic projection of the focusing ring on the base plate overlaps with the orthographic projection of the detection module on the base plate; the detection module is configured to detect the distance between the detection module and the focusing ring; and the processing module is specifically configured to control the DC power supply to transmit current to the wire when the distance between the detection module and the focusing ring is less than a preset value.

4. The plasma processing apparatus according to claim 3, wherein: The focus ring has a plurality of target detection areas; the detection module includes a plurality of detection probes, which are arranged at intervals along the circumference of the chuck; each of the detection probes is configured to detect the distance between the detection probe and one of the target detection areas of the focus ring; The plasma processing device includes a plurality of wires, and at least one of the wires is provided on a side of the target detection area of ​​the focus ring away from the chuck.

5. The plasma processing apparatus according to any one of claims 1 to 4, wherein: Also includes: A second side plate is arranged in the processing chamber; the second side plate is arranged around the focusing ring, and one end of the second side plate abuts against the top plate, and the other end abuts against the bottom plate; and the second side plate is provided with a through hole, which extends from the top plate to the bottom plate, and passes through the second side plate; the wire is arranged in the through hole.

6. The plasma processing apparatus according to claim 5, wherein: The material of the second side plate includes diamagnetic material.

7. The plasma processing apparatus according to claim 6, wherein: The diamagnetic material includes quartz.

8. The plasma processing apparatus according to claim 1, wherein Also includes: a base, on which the chuck is disposed; The base is electrically connected to the chuck.

9. The plasma processing apparatus according to claim 1, wherein: Also includes: an injection module connected to the top plate and disposed in the processing chamber; The injection module has a nozzle, and the nozzle is disposed toward the chuck.

10. The plasma processing apparatus according to claim 1, wherein Also includes: a first electrode connected to the top plate and disposed in the processing chamber; a second electrode connected to the bottom plate and disposed in the processing chamber; The first electrode and the second electrode are at least partially opposed to each other.

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