Test circuit of insulated gate bipolar transistor
By designing an insulated gate bipolar transistor test circuit, automatically collecting temperature and adjusting current, the problem of low efficiency of manual testing is solved, and the maximum operating current value is determined quickly and accurately, and device protection is achieved.
Patent Information
- Application Number
- CN202422075800.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-26
- Publication Date
- 2025-09-16
- Estimated Expiration
- 2034-08-26
AI Technical Summary
In the prior art, manually testing the maximum operating current value of an insulated gate bipolar transistor is inefficient.
A test circuit for insulated gate bipolar transistors (IGBTs) was designed, which included a temperature acquisition module, a control module, and a current source module. The temperature was collected and current signals were provided in an automated manner. The control module adjusted the current value according to the feedback signal to determine the maximum operating current value.
The test efficiency is improved, and the maximum operating current value of the insulated gate bipolar transistor can be determined quickly and accurately, reducing manual intervention and protecting the device from over-temperature damage.
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Figure CN223346993U_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the technical field of insulated gate bipolar transistor testing, and in particular relates to a testing circuit for an insulated gate bipolar transistor. Background Art
[0002] In order to select an insulated-gate bipolar transistor (IGBT), it is necessary to know the maximum operating current value of the IGBT, that is, the effective current value of the IGBT when the temperature of the IGBT reaches a preset temperature threshold. It should be noted that the effective current value of the IGBT is positively correlated with the temperature of the IGBT.
[0003] In the prior art, workers manually test the maximum operating current value of the insulated gate bipolar transistor to obtain the maximum operating current value of the insulated gate bipolar transistor.
[0004] The prior art has at least the following problems: since workers use a manual method to test the maximum operating current value of the insulated gate bipolar transistor, the working efficiency is low. Utility Model Content
[0005] The present application aims to provide a test circuit for an insulated gate bipolar transistor, which at least solves the problem of low work efficiency in the prior art due to the manual testing of the maximum operating current value of the insulated gate bipolar transistor by the staff.
[0006] In order to solve the above technical problems, this application is implemented as follows:
[0007] The embodiment of the present application provides a test circuit for an insulated gate bipolar transistor, comprising: a temperature acquisition module, a control module, and a current source module;
[0008] The current source module is configured to be electrically connected to the insulated gate bipolar transistor and provide a preset current signal of a preset current value to the insulated gate bipolar transistor;
[0009] The temperature acquisition module is electrically connected to the control module, and the temperature acquisition module is arranged in a preset area where the insulated gate bipolar transistor is located, collects the operating temperature of the insulated gate bipolar transistor, and generates a first feedback signal of the operating temperature;
[0010] The control module is used to be electrically connected to the insulated gate bipolar transistor, drive the insulated gate bipolar transistor to operate, obtain the operating temperature according to the first feedback signal, and increase the effective current value of the insulated gate bipolar transistor when the operating temperature is less than a preset temperature threshold.
[0011] In an embodiment of the present application, a preset current signal of a preset current value is provided to the insulated gate bipolar transistor through a current source module, and then the operating temperature of the insulated gate bipolar transistor is collected through a temperature acquisition module, and a first feedback signal of the operating temperature is generated, and then the insulated gate bipolar transistor is driven to work through a control module, and the operating temperature is obtained according to the first feedback signal, and when the operating temperature is less than a preset temperature threshold, the effective current value of the insulated gate bipolar transistor is increased, so that when the operating temperature of the insulated gate bipolar transistor reaches the preset temperature threshold, the staff can determine that the effective current value of the insulated gate bipolar transistor at this time is the maximum operating current value of the insulated gate bipolar transistor, and no manual processing is required in this process, thereby improving work efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0012] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments of the present application. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.
[0013] Figure 1 is a schematic diagram of a test circuit for an insulated gate bipolar transistor provided in an embodiment of the present application;
[0014] Figure 2 This is a specific schematic diagram of a test circuit for an insulated gate bipolar transistor provided in an embodiment of the present application;
[0015] Figure 3 This is a specific schematic diagram of another insulated gate bipolar transistor test circuit provided in an embodiment of the present application.
[0016] Reference numerals:
[0017] 10-temperature acquisition module; 20-control module; 21-micro control unit; 22-driving submodule; 30-current source module; 40-insulated gate bipolar transistor; 50-overcurrent protection module; 51-amplifier submodule; 52-comparison submodule; RS-acquisition resistor. DETAILED DESCRIPTION
[0018] The following will be combined with the accompanying drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments of this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.
[0019] The terms "first," "second," and the like in the specification and claims of this application are used to distinguish similar objects, and are not used to describe a specific order or precedence. It should be understood that the terms used in this manner are interchangeable where appropriate, so that the embodiments of this application can be implemented in an order other than that illustrated or described herein, and that the objects distinguished by "first," "second," and the like are generally of the same type, and do not limit the number of objects; for example, the first object can be one or more. In addition, the term "and / or" in the specification and claims refers to at least one of the connected objects, and the character " / " generally indicates that the objects connected are in an "or" relationship.
[0020] Reference Figure 1 An embodiment of the present application provides a test circuit for an insulated gate bipolar transistor 40, comprising: a temperature acquisition module 10, a control module 20, and a current source module 30; the current source module 30 is used to be electrically connected to the insulated gate bipolar transistor 40 and provide a preset current signal of a preset current value to the insulated gate bipolar transistor 40; the temperature acquisition module 10 is electrically connected to the control module 20, and the temperature acquisition module 10 is arranged in a preset area where the insulated gate bipolar transistor 40 is located, collects the operating temperature of the insulated gate bipolar transistor 40, and generates a first feedback signal of the operating temperature; the control module 20 is used to be electrically connected to the insulated gate bipolar transistor 40, drives the insulated gate bipolar transistor 40 to operate, and obtains the operating temperature according to the first feedback signal, and increases the effective current value of the insulated gate bipolar transistor 40 when the operating temperature is less than a preset temperature threshold.
[0021] It should be noted that the current value of the preset current signal provided by the current source module 30 to the insulated gate bipolar transistor 40 can be pre-set. The staff can first set the preset current value as the initial value, and then obtain the operating temperature of the insulated gate bipolar transistor 40 from the control module 20. When the operating temperature of the insulated gate bipolar transistor 40 is lower than the preset temperature threshold, the staff will increase the preset current value to increase the operating temperature of the insulated gate bipolar transistor 40. When the operating temperature of the insulated gate bipolar transistor 40 reaches the preset temperature threshold, it is determined that the effective current value (root mean square value, RMS) of the insulated gate bipolar transistor 40 at this time is the maximum operating current value of the insulated gate bipolar transistor 40.
[0022] In order to collect the operating temperature of the IGBT 40 , the temperature collection module 10 needs to be set in a preset area where the IGBT 40 is located. Specifically, the preset area can be a circular area with the IGBT 40 as the center and a preset radius.
[0023] The control module 20 drives the insulated gate bipolar transistor 40 to operate, that is, controls the insulated gate bipolar transistor 40 to be periodically turned on and off according to the generated pulse width modulation (PWM) signal; the first feedback signal of the operating temperature can be a digital signal, and the control module 20 obtains a binary code by analyzing the first feedback signal of the operating temperature, and then obtains the operating temperature represented by the binary code.
[0024] The IGBT 40 includes an N (Negative Electricity) channel IGBT and a P (Positive Electricity) channel IGBT.
[0025] The insulated gate bipolar transistor 40 is a semiconductor device commonly used in power electronics. It combines the high input impedance of a metal-oxide-semiconductor field-effect transistor (MOSFET) with the low on-state voltage drop of a bipolar junction transistor (BJT). The insulated gate bipolar transistor 40 is widely used in applications requiring high power and high efficiency, such as motor drives, power management, solar inverters, and electric vehicles.
[0026] In the application of the insulated gate bipolar transistor 40, since the insulated gate bipolar transistor 40 is in a key position for power exchange control and needs to withstand the current from the circuit, there is a temperature increase when the insulated gate bipolar transistor 40 is in the working state, which causes the performance of the insulated gate bipolar transistor 40 to change. During the use of the insulated gate bipolar transistor 40, overcurrent damage is prone to occur. Therefore, in actual applications, the limiting current value of the I insulated gate bipolar transistor 40 device during normal operation (that is, the maximum operating current value of the insulated gate bipolar transistor 40) needs to be strictly verified.
[0027] Therefore, it is particularly important to conduct a limit test on the operating current of the insulated gate bipolar transistor 40. Through the embodiments of the present application, it is possible to obtain the maximum operating current value of the insulated gate bipolar transistor 40, which is convenient for faster and more appropriate recommendation of the insulated gate bipolar transistor 40 and related devices suitable for users during promotion and application; in addition, obtaining the maximum operating current value of the insulated gate bipolar transistor 40 is conducive to the staff's clear understanding of the capabilities and defects of the insulated gate bipolar transistor 40, thereby improving the reliability and design capabilities of the insulated gate bipolar transistor 40.
[0028] In the embodiment of the present application, a preset current signal of a preset current value is provided to the insulated gate bipolar transistor 40 through the current source module 30, and then the operating temperature of the insulated gate bipolar transistor 40 is collected through the temperature acquisition module 10, and a first feedback signal of the operating temperature is generated. Then, the insulated gate bipolar transistor 40 is driven to work through the control module 20, and the operating temperature is obtained according to the first feedback signal. When the operating temperature is less than the preset temperature threshold, the effective current value of the insulated gate bipolar transistor is increased, so that when the operating temperature of the insulated gate bipolar transistor 40 reaches the preset temperature threshold, the staff can determine that the effective current value of the insulated gate bipolar transistor 40 at this time is the maximum operating current value of the insulated gate bipolar transistor 40, and no manual processing is required in this process, thereby improving work efficiency.
[0029] Optionally, in some embodiments, the control module 20 is further configured to reduce the effective current value or control the insulated gate bipolar transistor 40 to be turned off when the operating temperature is greater than the preset temperature threshold.
[0030] It should be noted that the preset temperature threshold is the temperature limit of the IGBT 40 . When the operating temperature of the IGBT 40 is greater than the preset temperature threshold and lasts for a period of time, the IGBT 40 is damaged.
[0031] In an embodiment of the present application, when the operating temperature is greater than a preset temperature threshold, the control module 20 reduces the effective current value of the insulated gate bipolar transistor 40 to lower the temperature of the insulated gate bipolar transistor 40 and protect the insulated gate bipolar transistor 40 from over-temperature damage; or when the operating temperature is greater than a preset temperature threshold, the control module 20 controls the insulated gate bipolar transistor 40 to be turned off, so that the insulated gate bipolar transistor 40 stops working, thereby lowering the temperature of the insulated gate bipolar transistor 40 and protecting the insulated gate bipolar transistor 40 from over-temperature damage.
[0032] Optionally, in some embodiments, the control module 20 is specifically used to drive the insulated gate bipolar transistor 40 to operate using a pulse width modulation signal; the control module 20 is also specifically used to increase the duty cycle of the pulse width modulation signal to increase the effective current value when the insulated gate bipolar transistor 40 is an N-channel insulated gate bipolar transistor and the operating temperature is less than a preset temperature threshold, and to reduce the duty cycle to reduce the effective current value when the insulated gate bipolar transistor 40 is an N-channel insulated gate bipolar transistor and the operating temperature is greater than the preset temperature threshold; the control module 20 is also specifically used to reduce the duty cycle to increase the effective current value when the insulated gate bipolar transistor 40 is a P-channel insulated gate bipolar transistor and the operating temperature is less than the preset temperature threshold, and to increase the duty cycle to reduce the effective current value when the insulated gate bipolar transistor 40 is a P-channel insulated gate bipolar transistor and the operating temperature is greater than the preset temperature threshold.
[0033] Specifically, in some embodiments, the insulated gate bipolar transistor 40 is an N-channel insulated gate bipolar transistor, and the control module 20 is further used to generate a pulse width modulation signal and control the insulated gate bipolar transistor 40 to be periodically turned on and off through the pulse width modulation signal; the control module 20 is also used to increase the duty cycle of the pulse width modulation signal when the operating temperature of the insulated gate bipolar transistor 40 is lower than a preset temperature threshold, so that the effective current value of the insulated gate bipolar transistor 40 increases, thereby increasing the operating temperature of the insulated gate bipolar transistor 40; and when the operating temperature of the insulated gate bipolar transistor 40 is higher than the preset temperature threshold, reduce the duty cycle of the pulse width modulation signal, so that the effective current value of the insulated gate bipolar transistor 40 decreases, thereby reducing the operating temperature of the insulated gate bipolar transistor 40.
[0034] In other embodiments, the insulated gate bipolar transistor 40 is a P-channel insulated gate bipolar transistor, and the control module 20 is further used to generate a pulse width modulation signal and control the insulated gate bipolar transistor 40 to be periodically turned on and off through the pulse width modulation signal; the control module 20 is also used to reduce the duty cycle of the pulse width modulation signal when the operating temperature of the insulated gate bipolar transistor 40 is lower than a preset temperature threshold, so that the effective current value of the insulated gate bipolar transistor 40 increases, thereby increasing the operating temperature of the insulated gate bipolar transistor 40; and when the operating temperature of the insulated gate bipolar transistor 40 is higher than the preset temperature threshold, increase the duty cycle of the pulse width modulation signal, so that the effective current value of the insulated gate bipolar transistor 40 decreases, thereby reducing the operating temperature of the insulated gate bipolar transistor 40.
[0035] It should be noted that the duty cycle of the pulse width modulation signal is the ratio of the duration that the pulse width modulation signal is at a high level to the duration of the entire period within the period of the pulse width modulation signal.
[0036] Optional, see Figure 2 In some embodiments, the test circuit of the insulated gate bipolar transistor 40 further includes an overcurrent protection module 50; the overcurrent protection module 50 is electrically connected to the control module 20, and the overcurrent protection module 50 is used to be electrically connected to the insulated gate bipolar transistor 40, collect the current signal of the insulated gate bipolar transistor 40, and generate a second feedback signal when the current value of the current signal is greater than a preset current threshold; the control module 20 is also used to control the insulated gate bipolar transistor 40 to be turned off when the second feedback signal is obtained.
[0037] It should be noted that the preset current threshold is the maximum current value allowed to pass through the IGBT 40 , and the preset current threshold is greater than or equal to the maximum operating current value of the IGBT 40 .
[0038] In an embodiment of the present application, the current signal of the insulated gate bipolar transistor 40 is collected by the overcurrent protection module 50, and a second feedback signal is generated when the current value of the current signal is greater than a preset current threshold. Then, the control module 20 controls the insulated gate bipolar transistor 40 to be turned off when the second feedback signal is obtained, so that the insulated gate bipolar transistor 40 stops working to protect the insulated gate bipolar transistor 40 from being damaged by overcurrent.
[0039] Specifically, in some embodiments, the second feedback signal is at a high level.
[0040] Optionally, in some embodiments, the overcurrent protection module 50 includes a collection resistor RS, an amplifier module 51, and a comparison submodule 52; the first end of the collection resistor RS is electrically connected to the first end of the insulated gate bipolar transistor 40, and the second end of the collection resistor RS is electrically connected to the first input end of the amplifier module 51; the second input end of the amplifier module 51 is electrically connected to the first end of the collection resistor RS, and the output end of the amplifier module 51 is electrically connected to the first input end of the comparison submodule 52; the second input end of the comparison submodule 52 is electrically connected to the first power supply, and the output end of the comparison submodule 52 is electrically connected to the second input end of the control module 20.
[0041] It should be noted that the acquisition resistor RS is used to collect the current signal of the insulated gate bipolar transistor 40, the amplification sub-module 51 is used to convert the current signal of the insulated gate bipolar transistor 40 into a voltage signal and amplify it, and the comparison sub-module 52 is used to compare the voltage signal with the reference voltage signal. When the voltage value of the voltage signal is greater than the reference voltage value of the reference voltage signal, it is determined that the current value of the current signal is greater than the preset current threshold, and a second feedback signal is generated and output.
[0042] In an embodiment of the present application, the current signal of the insulated gate bipolar transistor 40 is collected by the collection resistor RS, and then the current signal of the insulated gate bipolar transistor 40 is converted into a voltage signal and amplified by the amplification sub-module 51. Then, the voltage signal is compared with the reference voltage signal by the comparison sub-module 52. When the voltage value of the voltage signal is greater than the reference voltage value of the reference voltage signal, it is determined that the current value of the current signal is greater than the preset current threshold, and a second feedback signal is generated and output, so that the control module 20 controls the insulated gate bipolar transistor 40 to turn off when the second feedback signal is obtained, so that the insulated gate bipolar transistor 40 stops working to protect the insulated gate bipolar transistor 40 from overcurrent damage.
[0043] Optional, see Figure 3 In some embodiments, the amplification submodule 51 includes a first operational amplifier U2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, and a first diode D1; a first end of the third resistor R3 is electrically connected to the second end of the acquisition resistor RS, and a second end of the third resistor R3 is electrically connected to the inverting input terminal of the first operational amplifier U2; a first end of the fourth resistor R4 is electrically connected to the first end of the acquisition resistor RS, and a second end of the fourth resistor R4 is electrically connected to the non-inverting input terminal of the first operational amplifier U2; an output terminal of the first operational amplifier U2 is electrically connected to the first input terminal of the comparison submodule 52; a first end of the fifth resistor R5 is electrically connected to the inverting input terminal of the first operational amplifier U2, and a second end of the fifth resistor R5 is electrically connected to the output terminal of the first operational amplifier U2; an anode of the first diode D1 is grounded, and a cathode of the first diode D1 is electrically connected to the second end of the fourth resistor R4.
[0044] It should be noted that the first end of the third resistor R3 is the first input end of the amplifier module 51, the first end of the fourth resistor R4 is the second input end of the amplifier module 51, and the output end of the first operational amplifier U2 is the output end of the amplifier module 51.
[0045] Specifically, the first end of the acquisition resistor RS is electrically connected to the first end of the insulated gate bipolar transistor 40, and the second end of the acquisition resistor RS is electrically connected to the first end of the third resistor R3; the first end of the fourth resistor R4 is electrically connected to the first end of the acquisition resistor RS, the output end of the first operational amplifier U2 is electrically connected to the first input end of the comparison submodule 52; the second input end of the comparison submodule 52 is electrically connected to the first power supply, and the output end of the comparison submodule 52 is electrically connected to the second input end of the control module 20.
[0046] The positive electrode of the first operational amplifier U2 is electrically connected to the first power supply, and the negative electrode of the first operational amplifier U2 is grounded.
[0047] In the embodiment of the present application, the third resistor R3 and the fourth resistor R4 are both input resistors, the fifth resistor R5 is a negative feedback resistor, and the first diode D1 is used to clamp the non-inverting input terminal of the first operational amplifier U2. The current signal of the insulated gate bipolar transistor 40 is converted into a voltage signal and amplified through the first operational amplifier U2.
[0048] Optionally, in some embodiments, the comparison submodule 52 includes a second operational amplifier U3, a sixth resistor R6, a seventh resistor R7, and an eighth resistor R8; the first end of the sixth resistor R6 is electrically connected to the first power supply, and the second end of the sixth resistor R6 is electrically connected to the inverting input terminal of the second operational amplifier U3; the first end of the seventh resistor R7 is electrically connected to the second end of the sixth resistor R6, and the second end of the seventh resistor R7 is grounded; the first end of the eighth resistor R8 is electrically connected to the output terminal of the amplification submodule 51, and the second end of the eighth resistor R8 is electrically connected to the non-inverting input terminal of the second operational amplifier U3; the output terminal of the second operational amplifier U3 is electrically connected to the second input terminal of the control module 20.
[0049] It should be noted that the first end of the eighth resistor R8 is the first input end of the comparison submodule 52, the first end of the sixth resistor R6 is the second input end of the comparison submodule 52, and the output end of the second operational amplifier U3 is the output end of the comparison submodule 52.
[0050] Specifically, the first end of the acquisition resistor RS is electrically connected to the first end of the insulated gate bipolar transistor 40, and the second end of the acquisition resistor RS is electrically connected to the first end of the third resistor R3; the first end of the fourth resistor R4 is electrically connected to the first end of the acquisition resistor RS, and the output end of the first operational amplifier U2 is electrically connected to the first end of the eighth resistor R8; the first end of the sixth resistor R6 is electrically connected to the first power supply, and the output end of the second operational amplifier U3 is electrically connected to the second input end of the control module 20.
[0051] Specifically, in some embodiments, the first power supply may be 3.3 volts.
[0052] In an embodiment of the present application, the sixth resistor R6 and the seventh resistor R7 are voltage divider resistors, and the eighth resistor R8 is an input resistor. The voltage signal is compared with the reference voltage signal through the second operational amplifier U3. When the voltage value of the voltage signal is greater than the reference voltage value of the reference voltage signal, a second feedback signal is generated and output.
[0053] Optionally, in some embodiments, the comparison submodule 52 further includes a first capacitor C1 and a second capacitor C2; the first end of the first capacitor C1 is electrically connected to the inverting input terminal of the second operational amplifier U3, and the second end of the first capacitor C1 is grounded; the first end of the second capacitor C2 is electrically connected to the non-inverting input terminal of the second operational amplifier U3, and the second end of the second capacitor C2 is grounded.
[0054] In the embodiment of the present application, the first capacitor C1 is a filter capacitor at the inverting input terminal of the second operational amplifier U3 , and the second capacitor C2 is a filter capacitor at the non-inverting input terminal of the second operational amplifier U3 .
[0055] Optionally, in some embodiments, the control module 20 includes a microcontroller unit 21 and a driving submodule 22; the first input terminal b4 of the microcontroller unit 21 is electrically connected to the output terminal of the temperature acquisition module 10, and the output terminal b5 of the microcontroller unit 21 is electrically connected to the input terminal of the driving submodule 22, and the microcontroller unit 21 is used to generate a driving signal and obtain the operating temperature according to the first feedback signal; the output terminal of the driving submodule 22 is electrically connected to the gate of the insulated gate bipolar transistor 40, and the driving submodule 22 is used to drive the insulated gate bipolar transistor 40 to operate according to the driving signal; the first terminal of the insulated gate bipolar transistor 40 is electrically connected to the output terminal of the current source module 30, and the second terminal of the insulated gate bipolar transistor 40 is grounded.
[0056] It should be noted that the driving signal may be a pulse width modulation signal; the second input terminal of the control module 20 is the second input terminal b3 of the micro control unit 21 .
[0057] Specifically, the first end of the acquisition resistor RS is electrically connected to the first end of the insulated gate bipolar transistor 40, and the second end of the acquisition resistor RS is electrically connected to the first end of the third resistor R3; the first end of the fourth resistor R4 is electrically connected to the first end of the acquisition resistor RS, and the output end of the first operational amplifier U2 is electrically connected to the first end of the eighth resistor R8; the first end of the sixth resistor R6 is electrically connected to the first power supply, and the output end of the second operational amplifier U3 is electrically connected to the second input end b3 of the micro control unit 21.
[0058] The power supply terminal b1 of the micro control unit 21 is used to be electrically connected to the first power supply, the ground terminal b2 of the micro control unit 21 is grounded, and the second input terminal b3 of the micro control unit 21 is electrically connected to the output terminal of the overcurrent protection module 50 (that is, the output terminal of the comparison submodule 52, that is, the output terminal of the second operational amplifier U3).
[0059] Specifically, in some embodiments, the micro control unit (MCU) 21 may be connected to a display device (eg, a display screen) to display the operating temperature of the insulated gate bipolar transistor 40 via the display device.
[0060] In the embodiment of the present application, the micro control unit 21 generates a driving signal, obtains the operating temperature according to the first feedback signal, and then drives the insulated gate bipolar transistor 40 to operate according to the driving signal through the driving submodule 22.
[0061] Optionally, in some embodiments, the driving submodule 22 includes a driving chip U4, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a second diode D2, and a third diode D3; the first end of the ninth resistor R9 is electrically connected to the output end b5 of the micro control unit 21, and the second end of the ninth resistor R9 is electrically connected to the high-side input end c1 of the driving chip U4; the common end c2 of the driving chip U4 is grounded, and the output end c3 of the driving chip U4 is electrically connected to the positive electrode of the second diode D2 and the negative electrode of the third diode D3, respectively; the negative electrode of the second diode D2 is electrically connected to the first end of the tenth resistor R10; the positive electrode of the third diode D3 is electrically connected to the first end of the eleventh resistor R11; the second end of the tenth resistor R10 is electrically connected to the gate of the insulated gate bipolar transistor 40; the second end of the eleventh resistor R11 is electrically connected to the gate of the insulated gate bipolar transistor 40.
[0062] It should be noted that the power terminal c4 of the driving chip U4 is electrically connected to the first power supply.
[0063] In the embodiment of the present application, the ninth resistor R9 is an input resistor, the tenth resistor R10 is a current limiting resistor, and the eleventh resistor R11 is a current limiting resistor. Through the cooperation of the second diode D2 and the third diode D3, when the insulated gate bipolar transistor 40 is turned on, the tenth resistor R10 is energized and the eleventh resistor R11R1 is de-energized. When the insulated gate bipolar transistor 40 is turned off, the eleventh resistor R11 is energized and the tenth resistor R10 is de-energized; the insulated gate bipolar transistor 40 is driven to work according to the driving signal by the driving chip U4.
[0064] Optionally, in some embodiments, the driving submodule 22 also includes a third capacitor C3, a fourth capacitor C4, a twelfth resistor R12, and a thirteenth resistor R13; the first end of the third capacitor C3 is electrically connected to the second end of the ninth resistor R9, and the second end of the third capacitor C3 is grounded; the first end of the twelfth resistor R12 is electrically connected to the second end of the ninth resistor R9, and the second end of the twelfth resistor R12 is grounded; the first end of the fourth capacitor C4 is electrically connected to the gate of the insulated gate bipolar transistor 40, and the second end of the fourth capacitor C4 is grounded; the first end of the thirteenth resistor R13 is electrically connected to the gate of the insulated gate bipolar transistor 40, and the second end of the thirteenth resistor R13 is grounded.
[0065] In the embodiment of the present application, the third capacitor C3 and the fourth capacitor C4 are both filter capacitors, and the twelfth resistor R12 and the thirteenth resistor R13 are both pull-down resistors.
[0066] Optionally, in some embodiments, the temperature acquisition module 10 includes a thermistor NTC, a first resistor R1, a second resistor R2, and an analog-to-digital converter U1; the first end of the first resistor R1 is used to be electrically connected to a first power supply, and the second end of the first resistor R1 is electrically connected to the first end of the thermistor NTC; the second end of the thermistor NTC is grounded; the first end of the second resistor R2 is electrically connected to the second end of the first resistor R1, and the second end of the second resistor R2 is electrically connected to the input end a1 of the analog-to-digital converter U1; the power input end a2 of the analog-to-digital converter U1 is electrically connected to the first power supply, and the output end a3 of the analog-to-digital converter U1 is electrically connected to the first input end of the control module 20.
[0067] It should be noted that the first input terminal of the control module 20 is the first input terminal b4 of the micro-control unit 21, and the output terminal a3 of the analog-to-digital converter U1 is the output terminal of the temperature acquisition module 10. Specifically, the power input terminal a2 of the analog-to-digital converter U1 is electrically connected to the first power supply, and the output terminal a3 of the analog-to-digital converter U1 is electrically connected to the first input terminal b4 of the micro-control unit 21.
[0068] Specifically, in some embodiments, the insulated gate bipolar transistor 40 is usually mounted closely on a printed circuit board (PCB). The insulated gate bipolar transistor 40 generates heat during operation, causing the temperature of a preset area where the insulated gate bipolar transistor 40 is located to rise. The thermistor NTC is set in the preset area where the insulated gate bipolar transistor 40 is located, and can collect the operating temperature of the insulated gate bipolar transistor 40, wherein the resistance value of the thermistor NTC is negatively correlated with the operating temperature of the insulated gate bipolar transistor 40.
[0069] The analog-to-digital converter U1 (ADC) is used to convert analog signals into digital signals.
[0070] In an embodiment of the present application, the first resistor R1 is a pull-up resistor, the second resistor R2 is an input resistor, and the operating temperature of the insulated gate bipolar transistor 40 is collected through the thermistor NTC. Specifically, when the operating temperature of the insulated gate bipolar transistor 40 increases, the resistance value of the thermistor NTC decreases, so that the voltage value of the thermistor NTC decreases, and then the voltage of the input terminal a1 of the analog-to-digital converter U1 decreases. The analog-to-digital converter U1 generates a first feedback signal (digital signal) of the operating temperature based on the voltage analog signal of the input terminal a1 of the analog-to-digital converter U1.
[0071] Optionally, in some embodiments, the current source module 30 is an electronic load; the input end of the current source module 30 is electrically connected to the second power supply, and the output end of the current source module 30 is electrically connected to the first end of the insulated gate bipolar transistor 40; the gate of the insulated gate bipolar transistor 40 is electrically connected to the output end of the control module 20, and the second end of the insulated gate bipolar transistor 40 is grounded.
[0072] It should be noted that the current source module 30 operates in a constant current mode (CC), that is, the current source module 30 is configured to output a current signal with a stable current value.
[0073] In the embodiment of the present application, the energized current source module 30 provides a preset current signal with a stable preset current value to the insulated gate bipolar transistor 40 .
[0074] Specifically, in some embodiments, the insulated gate bipolar transistor 40 is an N-channel insulated gate bipolar transistor, the first end of the insulated gate bipolar transistor 40 is the collector of the insulated gate bipolar transistor 40, and the second end of the insulated gate bipolar transistor 40 is the emitter of the insulated gate bipolar transistor 40; the first end of the first resistor R1 is used to be electrically connected to the first power supply, the second end of the first resistor R1 is electrically connected to the first end of the thermistor NTC, the second end of the thermistor NTC is grounded, the first end of the second resistor R2 is electrically connected to the second end of the first resistor R1, and the second end of the second resistor R2 is electrically connected to the input end a1 of the analog-to-digital converter U1; the power input end a2 of the analog-to-digital converter U1 is electrically connected to the first power supply, and the output end a3 of the analog-to-digital converter U1 is electrically connected to the first input end b4 of the micro control unit 21. The first end of the third resistor R3 is electrically connected to the second end of the acquisition resistor RS, and the second end of the third resistor R3 is electrically connected to the inverting input terminal of the first operational amplifier U2; the first end of the fourth resistor R4 is electrically connected to the first end of the acquisition resistor RS, and the second end of the fourth resistor R4 is electrically connected to the non-inverting input terminal of the first operational amplifier U2; the output terminal of the first operational amplifier U2 is electrically connected to the first end of the eighth resistor R8; the first end of the fifth resistor R5 is electrically connected to the inverting input terminal of the first operational amplifier U2, and the second end of the fifth resistor R5 is electrically connected to the output terminal of the first operational amplifier U2; the anode of the first diode D1 is grounded, and the cathode of the first diode D1 is electrically connected to the second end of the fourth resistor R4; the first end of the acquisition resistor RS is electrically connected to the emitter of the insulated gate bipolar transistor 40;
[0075] The first end of the sixth resistor R6 is electrically connected to the first power supply, and the second end of the sixth resistor R6 is electrically connected to the inverting input terminal of the second operational amplifier U3; the first end of the seventh resistor R7 is electrically connected to the second end of the sixth resistor R6, and the second end of the seventh resistor R7 is grounded; the second end of the eighth resistor R8 is electrically connected to the non-inverting input terminal of the second operational amplifier U3; the output terminal of the second operational amplifier U3 is electrically connected to the second input terminal b3 of the micro control unit 21; the first end of the first capacitor C1 is electrically connected to the inverting input terminal of the second operational amplifier U3, and the second end of the first capacitor C1 is grounded; the first end of the second capacitor C2 is electrically connected to the non-inverting input terminal of the second operational amplifier U3, and the output terminal of the second capacitor C2 is electrically connected to the inverting input terminal of the second operational amplifier U3. The second end is grounded; a first end of a ninth resistor R9 is electrically connected to the output end b5 of the microcontroller unit 21, and a second end of the ninth resistor R9 is electrically connected to the high-side input end c1 of the driver chip U4; a common end c2 of the driver chip U4 is grounded, and an output end c3 of the driver chip U4 is electrically connected to the anode of the second diode D2 and the cathode of the third diode D3, respectively; the cathode of the second diode D2 is electrically connected to the first end of the tenth resistor R10; the anode of the third diode D3 is electrically connected to the first end of the eleventh resistor R11; the second end of the tenth resistor R10 is electrically connected to the gate of the insulated gate bipolar transistor 40; and the second end of the eleventh resistor R11 is electrically connected to the gate of the insulated gate bipolar transistor 40.
[0076] The first end of the third capacitor C3 is electrically connected to the second end of the ninth resistor R9, and the second end of the third capacitor C3 is grounded; the first end of the twelfth resistor R12 is electrically connected to the second end of the ninth resistor R9, and the second end of the twelfth resistor R12 is grounded; the first end of the fourth capacitor C4 is electrically connected to the gate of the insulated gate bipolar transistor 40, and the second end of the fourth capacitor C4 is grounded; the first end of the thirteenth resistor R13 is electrically connected to the gate of the insulated gate bipolar transistor 40, and the second end of the thirteenth resistor R13 is grounded; the input end of the current source module 30 is electrically connected to the second power supply, and the output end of the current source module 30 is electrically connected to the collector of the insulated gate bipolar transistor 40.
[0077] In other embodiments, the insulated gate bipolar transistor 40 is a P-channel insulated gate bipolar transistor, the first end of the insulated gate bipolar transistor 40 is the emitter of the insulated gate bipolar transistor 40, and the second end of the insulated gate bipolar transistor 40 is the collector of the insulated gate bipolar transistor 40; the first end of the first resistor R1 is used to be electrically connected to the first power supply, the second end of the first resistor R1 is electrically connected to the first end of the thermistor NTC, the second end of the thermistor NTC is grounded, the first end of the second resistor R2 is electrically connected to the second end of the first resistor R1, and the second end of the second resistor R2 is electrically connected to the input end a1 of the analog-to-digital converter U1; the power input end a2 of the analog-to-digital converter U1 is electrically connected to the first power supply, and the output end a3 of the analog-to-digital converter U1 is electrically connected to the first input end b4 of the micro control unit 21 A first end of the third resistor R3 is electrically connected to the second end of the acquisition resistor RS, and the second end of the third resistor R3 is electrically connected to the inverting input terminal of the first operational amplifier U2; a first end of the fourth resistor R4 is electrically connected to the first end of the acquisition resistor RS, and the second end of the fourth resistor R4 is electrically connected to the non-inverting input terminal of the first operational amplifier U2; the output terminal of the first operational amplifier U2 is electrically connected to the first end of the eighth resistor R8; a first end of the fifth resistor R5 is electrically connected to the inverting input terminal of the first operational amplifier U2, and the second end of the fifth resistor R5 is electrically connected to the output terminal of the first operational amplifier U2; an anode of the first diode D1 is grounded, and a cathode of the first diode D1 is electrically connected to the second end of the fourth resistor R4; a first end of the acquisition resistor RS is electrically connected to the collector of the insulated gate bipolar transistor 40;
[0078] The first end of the sixth resistor R6 is electrically connected to the first power supply, and the second end of the sixth resistor R6 is electrically connected to the inverting input terminal of the second operational amplifier U3; the first end of the seventh resistor R7 is electrically connected to the second end of the sixth resistor R6, and the second end of the seventh resistor R7 is grounded; the second end of the eighth resistor R8 is electrically connected to the non-inverting input terminal of the second operational amplifier U3; the output terminal of the second operational amplifier U3 is electrically connected to the second input terminal b3 of the micro control unit 21; the first end of the first capacitor C1 is electrically connected to the inverting input terminal of the second operational amplifier U3, and the second end of the first capacitor C1 is grounded; the first end of the second capacitor C2 is electrically connected to the non-inverting input terminal of the second operational amplifier U3, and the output terminal of the second capacitor C2 is electrically connected to the inverting input terminal of the second operational amplifier U3. The second end is grounded; a first end of a ninth resistor R9 is electrically connected to the output end b5 of the microcontroller unit 21, and a second end of the ninth resistor R9 is electrically connected to the high-side input end c1 of the driver chip U4; a common end c2 of the driver chip U4 is grounded, and an output end c3 of the driver chip U4 is electrically connected to the anode of the second diode D2 and the cathode of the third diode D3, respectively; the cathode of the second diode D2 is electrically connected to the first end of the tenth resistor R10; the anode of the third diode D3 is electrically connected to the first end of the eleventh resistor R11; the second end of the tenth resistor R10 is electrically connected to the gate of the insulated gate bipolar transistor 40; and the second end of the eleventh resistor R11 is electrically connected to the gate of the insulated gate bipolar transistor 40.
[0079] The first end of the third capacitor C3 is electrically connected to the second end of the ninth resistor R9, and the second end of the third capacitor C3 is grounded; the first end of the twelfth resistor R12 is electrically connected to the second end of the ninth resistor R9, and the second end of the twelfth resistor R12 is grounded; the first end of the fourth capacitor C4 is electrically connected to the gate of the insulated gate bipolar transistor 40, and the second end of the fourth capacitor C4 is grounded; the first end of the thirteenth resistor R13 is electrically connected to the gate of the insulated gate bipolar transistor 40, and the second end of the thirteenth resistor R13 is grounded; the input end of the current source module 30 is electrically connected to the second power supply, and the output end of the current source module 30 is electrically connected to the emitter of the insulated gate bipolar transistor 40.
[0080] The current source module 30 is powered by a second power supply, and the current source module 30 operates in a constant current mode. The current source module 30 then provides a preset current signal with a stable preset current value to the insulated gate bipolar transistor 40. At the same time, a drive signal (i.e., a pulse width modulation signal) is generated by the micro control unit 21, and the first feedback signal (digital signal) of the operating temperature is analyzed to obtain a binary code, and then the operating temperature represented by the binary code is obtained. The insulated gate bipolar transistor 40 is then driven to operate according to the drive signal by the driver chip U4. Specifically, when the insulated gate bipolar transistor 40 is an N-channel insulated gate bipolar transistor, the insulated gate bipolar transistor 40 is turned on when the drive signal is high, and the insulated gate bipolar transistor 40 is turned off when the drive signal is low; when the insulated gate bipolar transistor 40 is a P-channel insulated gate bipolar transistor, the insulated gate bipolar transistor 40 is turned off when the drive signal is high, and the insulated gate bipolar transistor 40 is turned on when the drive signal is low;
[0081] The current signal of the insulated gate bipolar transistor 40 is collected through the collection resistor RS, and then converted into a voltage signal and amplified by the first operational amplifier U2. The voltage signal is then compared with a reference voltage signal by the second operational amplifier U3. When the voltage value of the voltage signal is greater than the reference voltage value of the reference voltage signal, it is determined that the current value of the current signal is greater than a preset current threshold, and a second feedback signal is generated and output. Then, when the micro control unit 21 obtains the second feedback signal, it controls the insulated gate bipolar transistor 40 to turn off, so that the insulated gate bipolar transistor 40 stops working, thereby protecting the insulated gate bipolar transistor 40 from overcurrent damage.
[0082] At the same time, when the operating temperature of the insulated gate bipolar transistor 40 increases, the resistance value of the thermistor NTC decreases, causing the voltage value of the thermistor NTC to decrease, thereby causing the voltage at the input terminal a1 of the analog-to-digital converter U1 to decrease. The analog-to-digital converter U1 generates a first feedback signal (digital signal) of the operating temperature based on the voltage analog signal at the input terminal a1 of the analog-to-digital converter U1.
[0083] In addition, when the operating temperature is greater than a preset temperature threshold, the micro control unit 21 controls the IGBT 40 to turn off, so that the IGBT 40 stops working, thereby reducing the temperature of the IGBT 40 and protecting the IGBT 40 from overheating damage.
[0084] In some embodiments, the insulated gate bipolar transistor 40 is an N-channel insulated gate bipolar transistor. When the operating temperature of the insulated gate bipolar transistor 40 is lower than a preset temperature threshold, the microcontroller unit 21 increases the duty cycle of the pulse width modulation signal, thereby increasing the effective current value of the insulated gate bipolar transistor 40 and thereby increasing the operating temperature of the insulated gate bipolar transistor 40; and when the operating temperature of the insulated gate bipolar transistor 40 is higher than the preset temperature threshold, the microcontroller unit 21 reduces the duty cycle of the pulse width modulation signal, thereby reducing the effective current value of the insulated gate bipolar transistor 40 and thereby reducing the operating temperature of the insulated gate bipolar transistor 40, thereby achieving the adjustment of the operating temperature of the insulated gate bipolar transistor 40.
[0085] In other embodiments, the insulated gate bipolar transistor 40 is a P-channel insulated gate bipolar transistor. When the operating temperature of the insulated gate bipolar transistor 40 is lower than a preset temperature threshold, the microcontroller unit 21 reduces the duty cycle of the pulse width modulation signal, thereby increasing the effective current value of the insulated gate bipolar transistor 40 and thereby increasing the operating temperature of the insulated gate bipolar transistor 40; and when the operating temperature of the insulated gate bipolar transistor 40 is higher than the preset temperature threshold, the microcontroller unit 21 increases the duty cycle of the pulse width modulation signal, thereby reducing the effective current value of the insulated gate bipolar transistor 40 and thereby reducing the operating temperature of the insulated gate bipolar transistor 40, thereby achieving the adjustment of the operating temperature of the insulated gate bipolar transistor 40.
[0086] To sum up, in the embodiment of the present application, a preset current signal of a preset current value is provided to the insulated gate bipolar transistor 40 through the current source module 30, and then the operating temperature of the insulated gate bipolar transistor 40 is collected through the temperature acquisition module 10, and a first feedback signal of the operating temperature is generated. Then, the control module 20 drives the insulated gate bipolar transistor 40 to work, and obtains the operating temperature according to the first feedback signal, and increases the effective current value of the insulated gate bipolar transistor 40 when the operating temperature is lower than the preset temperature threshold, so that the staff can determine that the effective current value of the insulated gate bipolar transistor 40 at this time is the maximum operating current value of the insulated gate bipolar transistor 40 when the operating temperature of the insulated gate bipolar transistor 40 reaches the preset temperature threshold, and no manual processing is required in this process, thereby improving work efficiency.
[0087] It should be noted that, in this article, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the statement "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device comprising the element. In addition, it should be noted that the scope of the methods and devices in the embodiments of the present application is not limited to performing functions in the order shown or discussed, and may also include performing functions in a substantially simultaneous manner or in the opposite order according to the functions involved. For example, the described method may be performed in an order different from that described, and various steps may also be added, omitted, or combined. In addition, the features described with reference to certain examples may be combined in other examples.
[0088] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the purpose of this application and the scope of protection of the claims, all of which are within the protection of this application.
Claims
1. A test circuit for an insulated gate bipolar transistor, characterized in that: include: Temperature acquisition module, control module, current source module; The current source module is configured to be electrically connected to the insulated gate bipolar transistor and provide a preset current signal of a preset current value to the insulated gate bipolar transistor; The temperature acquisition module is electrically connected to the control module, and the temperature acquisition module is arranged in a preset area where the insulated gate bipolar transistor is located, collects the operating temperature of the insulated gate bipolar transistor, and generates a first feedback signal of the operating temperature; The control module is used to be electrically connected to the insulated gate bipolar transistor, drive the insulated gate bipolar transistor to operate, obtain the operating temperature according to the first feedback signal, and increase the effective current value of the insulated gate bipolar transistor when the operating temperature is less than a preset temperature threshold.
2. The test circuit for an insulated gate bipolar transistor according to claim 1, wherein: The temperature acquisition module includes a thermistor, a first resistor, a second resistor, and an analog-to-digital converter; The first end of the first resistor is used to be electrically connected to the first power supply, and the second end of the first resistor is electrically connected to the first end of the thermistor; The second end of the thermistor is grounded; The first end of the second resistor is electrically connected to the second end of the first resistor, and the second end of the second resistor is electrically connected to the input end of the analog-to-digital converter; The power input terminal of the analog-to-digital converter is electrically connected to the first power supply, and the output terminal of the analog-to-digital converter is electrically connected to the first input terminal of the control module.
3. The test circuit for the insulated gate bipolar transistor according to claim 1, wherein: The test circuit of the insulated gate bipolar transistor also includes an overcurrent protection module; The overcurrent protection module is electrically connected to the control module, and is configured to be electrically connected to the insulated gate bipolar transistor, collect a current signal of the insulated gate bipolar transistor, and generate a second feedback signal when a current value of the current signal is greater than a preset current threshold; The control module is further configured to control the insulated gate bipolar transistor to be turned off when the second feedback signal is obtained.
4. The test circuit for the insulated gate bipolar transistor according to claim 3, wherein: The overcurrent protection module includes an acquisition resistor, an amplification submodule, and a comparison submodule; The first end of the acquisition resistor is electrically connected to the first end of the insulated gate bipolar transistor, and the second end of the acquisition resistor is electrically connected to the first input end of the amplifier module; The second input terminal of the amplifying submodule is electrically connected to the first terminal of the acquisition resistor, and the output terminal of the amplifying submodule is electrically connected to the first input terminal of the comparing submodule; The second input terminal of the comparison submodule is electrically connected to the first power supply, and the output terminal of the comparison submodule is electrically connected to the second input terminal of the control module.
5. The test circuit for the insulated gate bipolar transistor according to claim 4, wherein: The amplifying submodule includes a first operational amplifier, a third resistor, a fourth resistor, a fifth resistor, and a first diode; The first end of the third resistor is electrically connected to the second end of the acquisition resistor, and the second end of the third resistor is electrically connected to the inverting input terminal of the first operational amplifier; The first end of the fourth resistor is electrically connected to the first end of the acquisition resistor, and the second end of the fourth resistor is electrically connected to the non-inverting input terminal of the first operational amplifier; The output terminal of the first operational amplifier is electrically connected to the first input terminal of the comparison submodule; A first end of the fifth resistor is electrically connected to the inverting input terminal of the first operational amplifier, and a second end of the fifth resistor is electrically connected to the output terminal of the first operational amplifier; An anode of the first diode is grounded, and a cathode of the first diode is electrically connected to the second end of the fourth resistor.
6. The test circuit for the insulated gate bipolar transistor according to claim 4, wherein: The comparison submodule includes a second operational amplifier, a sixth resistor, a seventh resistor, and an eighth resistor; A first end of the sixth resistor is electrically connected to the first power supply, and a second end of the sixth resistor is electrically connected to the inverting input terminal of the second operational amplifier; The first end of the seventh resistor is electrically connected to the second end of the sixth resistor. The second end of is grounded; A first end of the eighth resistor is electrically connected to the output end of the amplifying submodule, and a second end of the eighth resistor is electrically connected to the non-inverting input end of the second operational amplifier; The output terminal of the second operational amplifier is electrically connected to the second input terminal of the control module.
7. The test circuit for the insulated gate bipolar transistor according to claim 6, wherein: The comparison submodule further includes a first capacitor and a second capacitor; A first end of the first capacitor is electrically connected to the inverting input terminal of the second operational amplifier, and a second end of the first capacitor is grounded; A first end of the second capacitor is electrically connected to the non-inverting input terminal of the second operational amplifier, and a second end of the second capacitor is grounded.
8. The test circuit for the insulated gate bipolar transistor according to claim 1, wherein: The control module includes a micro control unit and a driving submodule; The first input terminal of the microcontroller unit is electrically connected to the output terminal of the temperature acquisition module, and the output terminal of the microcontroller unit is electrically connected to the input terminal of the driving submodule. The microcontroller unit is used to generate a driving signal and obtain the operating temperature according to the first feedback signal; The output end of the driving submodule is electrically connected to the gate of the insulated gate bipolar transistor, and the driving submodule is used to drive the insulated gate bipolar transistor to operate according to the driving signal; A first terminal of the insulated gate bipolar transistor is electrically connected to the output terminal of the current source module, and a second terminal of the insulated gate bipolar transistor is grounded.
9. The test circuit for the insulated gate bipolar transistor according to claim 8, wherein: The driving submodule includes a driving chip, a ninth resistor, a tenth resistor, an eleventh resistor, a second diode, and a third diode; A first end of the ninth resistor is electrically connected to the output end of the micro control unit, and a second end of the ninth resistor is electrically connected to the high-side input end of the driver chip; The common terminal of the driving chip is grounded, and the output terminal of the driving chip is electrically connected to the anode of the second diode and the cathode of the third diode respectively; The cathode of the second diode is electrically connected to the first end of the tenth resistor; The anode of the third diode is electrically connected to the first end of the eleventh resistor; The second end of the tenth resistor is electrically connected to the gate of the insulated gate bipolar transistor; The second end of the eleventh resistor is electrically connected to the gate of the insulated gate bipolar transistor.
10. The test circuit for the insulated gate bipolar transistor according to claim 9, wherein: The driving submodule further includes a third capacitor, a fourth capacitor, a twelfth resistor, and a thirteenth resistor; The first end of the third capacitor is electrically connected to the second end of the ninth resistor, and the second end of the third capacitor is grounded; The first end of the twelfth resistor is electrically connected to the second end of the ninth resistor, and the second end of the twelfth resistor is grounded; A first end of the fourth capacitor is electrically connected to the gate of the insulated gate bipolar transistor, and a second end of the fourth capacitor is grounded; A first end of the thirteenth resistor is electrically connected to the gate of the insulated gate bipolar transistor, and a second end of the thirteenth resistor is grounded.
11. The test circuit of the insulated gate bipolar transistor according to claim 1, wherein: The current source module is an electronic load; The input end of the current source module is electrically connected to the second power supply, and the output end of the current source module is electrically connected to the first end of the insulated gate bipolar transistor; A gate of the insulated gate bipolar transistor is electrically connected to the output terminal of the control module, and a second terminal of the insulated gate bipolar transistor is grounded.
12. The insulated gate bipolar transistor test circuit according to claim 1, wherein: The control module is specifically configured to drive the insulated gate bipolar transistor to operate using a pulse width modulation signal; The control module is further configured to increase the duty cycle of the pulse width modulation signal to increase the effective current value when the insulated gate bipolar transistor is an N-channel insulated gate bipolar transistor and the operating temperature is lower than the preset temperature threshold; The control module is further configured to reduce the duty cycle to increase the effective current value when the insulated gate bipolar transistor is a P-channel insulated gate bipolar transistor and the operating temperature is lower than the preset temperature threshold.
13. The test circuit of the insulated gate bipolar transistor according to claim 1, wherein: The control module is further configured to reduce the effective current value or control the insulated gate bipolar transistor to be turned off when the operating temperature is greater than the preset temperature threshold.