Plasma activation device

Abstract

The utility model relates to a plasma activation device, belongs to the technical field of semiconductor packaging, and solves the problems that plasma of an existing device acts on an exposed blue film, so that the blue film is possibly damaged, and / or the plasma acts on an adhesion layer of the blue film, so that a large number of particles are generated, and the surface of a chip is seriously polluted. The plasma activation device comprises a chamber, and a vacuum chuck, a plasma source and a mask which are arranged in the chamber, the mask plate is located above the vacuum suction cup, and a plurality of holes corresponding to the chips are formed in the mask plate. The mask effectively shields the exposed blue film outside the chip, and the plasma is prevented from directly acting on the blue film in the activation process, so that the damage of the plasma to the blue film is reduced, and the generation of particles on the adhesion layer of the blue film is reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor packaging, in particular to a plasma activation device. Background Art

[0002] Die to wafer (D2W) hybrid bonding is a new bonding method that bonds cut chips to wafers. This method can screen known good chips and freely mount chips of different types and sizes. It has high flexibility and is considered to be an ideal solution for achieving three-dimensional high-density interconnection integration of chips in the future. D2W hybrid bonding is divided into two technical routes. One is the carrier collaborative method: all chips are placed on the carrier for activation and bonding, and the other is direct bonding: the cut chips are placed on a blue film iron ring (such as Figure 2 As shown, the corresponding chip is picked up and bonded as needed. Direct bonding is highly flexible and can support chips of various sizes and functions, making it an important research direction for the future. After the blue film chip undergoes plasma activation, cleaning, pre-bonding, and annealing, the chip and wafer are bonded. Unlike wafer-to-wafer (W2W), D2W requires very strict particle control during the process, especially during the plasma activation process, due to the small chip area and difficult operation.

[0003] Existing plasma activation devices are all wafer-level oriented and can only support plasma activation on the wafer surface. They cannot meet the surface activation requirements of chips attached to blue film. The main problems are: (1) Plasma acts from above the chamber, not only on the chip surface, but also on the exposed blue film, which may damage the blue film and lose its ability to carry the chip; (2) Plasma acting on the blue film adhesion layer will produce a large number of particles, seriously contaminating the chip surface and possibly damaging the activation device. Utility Model Content

[0004] In view of the above analysis, the present invention aims to provide a plasma activation device to solve at least one of the following problems existing in existing plasma activation devices: (1) Plasma acting on the exposed blue film may cause damage to the blue film; (2) Plasma acting on the blue film adhesion layer will produce a large number of particles, seriously contaminating the chip surface.

[0005] The utility model provides a plasma activation device, which includes a chamber, a vacuum chuck, a plasma source and a mask arranged in the chamber;

[0006] The mask is located above the vacuum chuck, and a plurality of apertures corresponding to the chips are arranged on the mask.

[0007] Preferably, exemplarily, the mask plate includes a plurality of mask sheets, each mask sheet is provided with apertures of different shapes, and the apertures formed by superimposing the plurality of different mask sheets correspond to chips of different shapes.

[0008] Preferably, the pores are one of circular, square and rectangular.

[0009] Preferably, a vacuum pipeline is provided under the vacuum suction cup.

[0010] Preferably, the diameter of the vacuum suction cup is not less than 400 mm.

[0011] Preferably, the vacuum suction cup is provided with a plurality of pressure control areas arranged in sequence from the center to the circumference, each pressure control area is provided with an air hole, and the air hole is connected to the vacuum pipeline.

[0012] Preferably, six pressure control zones are provided on the vacuum suction cup, and the six pressure control zones include a circular pressure control zone located in the center and a plurality of annular pressure control zones arranged sequentially from the circular pressure control zone toward the circumference.

[0013] Preferably, the mask is fixed on the surface of the iron ring by magnetic attraction.

[0014] Preferably, a cooling system is provided on the lower surface of the vacuum suction cup.

[0015] Preferably, the cooling system includes a cooling medium flow channel arranged on the lower surface of the vacuum suction cup, and the cooling medium flow channel is arranged in a "U" shape.

[0016] Compared with the prior art, the present invention can achieve at least one of the following beneficial effects:

[0017] 1. The utility model sets a mask plate above the vacuum suction cup. During implementation, the blue film carrying the chip is placed on the vacuum suction cup, and then the mask plate is covered on the blue film, and the chip is exposed through the pores of the mask plate. The mask plate effectively blocks the exposed blue film outside the chip, preventing the plasma from directly acting on the blue film during the activation process, thereby reducing the damage of the plasma to the blue film and reducing the generation of particles on the adhesion layer of the blue film.

[0018] 2. The vacuum chuck of the present invention is provided with multiple pressure control zones to accommodate wafers and blue film chips of various sizes.

[0019] 3. The lower surface of the vacuum chuck of the present invention is provided with a cooling system to prevent the high-temperature plasma from destroying the blue film adhesion layer and causing a large amount of particles to overflow, thereby reducing the pollution to the chip sample and the plasma activation chamber environment.

[0020] 4. The plasma activation device of the present invention is used to activate the blue film chip. Compared with before activation, the number of particles with a diameter of less than 300 nm on the blue film adhesion layer after activation increases by ≤20.

[0021] In the present invention, the above-mentioned technical solutions can be combined with each other to achieve more preferred combinations. Other features and advantages of the present invention will be described in the following content, and some advantages will become apparent from the description or be understood through practice of the present invention. The objectives and other advantages of the present invention can be realized and obtained through the contents particularly pointed out in the text and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The accompanying drawings are only used for the purpose of illustrating specific embodiments and are not to be considered as limiting the present invention. Throughout the accompanying drawings, the same reference symbols denote the same components.

[0023] Figure 1 It is the plasma activation device of the utility model;

[0024] Figure 2 This is a schematic diagram of placing the chip on the blue film after dicing the wafer;

[0025] Figure 3 This is a schematic diagram of the distribution of pressure control areas on the vacuum suction cup of the present invention.

[0026] Reference numerals:

[0027] 1-chamber; 2-vacuum chuck; 3-plasma source; 4-mask; 5-aperture; 6-chip; 7-vacuum pipeline; 8-cooling system; 9-blue film; 10-iron ring; 11-blade; 12-pressure control area. DETAILED DESCRIPTION

[0028] The preferred embodiments of the present invention are described in detail below in conjunction with the accompanying drawings, wherein the accompanying drawings constitute a part of this application and are used together with the embodiments of the present invention to illustrate the principles of the present invention, and are not used to limit the scope of the present invention.

[0029] The utility model provides a plasma activation device, which includes a chamber 1, a vacuum chuck 2, a plasma source 3 and a mask 4 arranged in the chamber;

[0030] The mask 4 is located above the vacuum chuck 2 , and a plurality of apertures 5 corresponding to the chips 6 are provided on the mask 4 .

[0031] During implementation, the blue film 9 carrying the chip 6 (an iron ring 10 is provided on the periphery of the blue film 9 to support the blue film) is placed on the vacuum suction cup 2, and then the mask plate 4 is covered on the blue film 9, the chip 6 is exposed through the pore 5, and the plasma source 3 provides plasma from above to activate the exposed chip 6.

[0032] Compared with the existing technology, the utility model sets a mask plate above the vacuum suction cup, which covers the blue film outside the chip, preventing the plasma from directly acting on the blue film outside the chip during the activation process, thereby reducing the damage of the plasma to the blue film and reducing the generation of particles on the blue film adhesion layer.

[0033] Exemplarily, the mask plate 4 includes a plurality of mask sheets, each of which is provided with apertures of different shapes, and the apertures formed by stacking the plurality of different mask sheets correspond to chips of different shapes.

[0034] Exemplarily, the pores 6 are in the shape of a circle, a square, or a rectangle, as long as they correspond to the shape of the chip.

[0035] Exemplarily, the thickness of the mask 4 is 100-2000 microns.

[0036] In the present invention, the function of the vacuum chuck 2 is to adsorb the wafer or blue film chip on the upper surface of the vacuum chuck 2 through vacuum adsorption.

[0037] For example, a vacuum line 7 is provided below the vacuum suction cup 2 .

[0038] like Figure 2 As shown, after the wafer is cut and expanded, the chip spacing increases, and an iron ring is required as a carrier. Therefore, the size of the blue film that carries the chip is larger than the wafer size. For example, after a 12-inch wafer is cut into chips, the chips are placed on the blue film. The diameter of the blue film iron ring is 400mm. Compared with the 12-inch wafer (diameter is 300mm), the diameter has become larger. The size of the vacuum suction cup of the ordinary wafer activation device cannot meet the requirements of the blue film chip.

[0039] Therefore, the diameter of the vacuum chuck 2 of the present invention is not less than 400 mm, so that the plasma activation device of the present invention is not only suitable for plasma activation of wafers smaller than 12 inches, but also for plasma activation of blue film chips after wafer dicing and expansion smaller than 12 inches.

[0040] For example, the vacuum chuck 2 is provided with a plurality of pressure control zones 12 arranged sequentially from the center toward the circumference. Each pressure control zone 12 is provided with an air hole, which is connected to the vacuum line 7. The vacuum line 7 draws air through the air hole, so that the wafer or blue film chip is adsorbed on the vacuum chuck 2.

[0041] Specifically, if Figure 3 As shown, six pressure control zones are provided on the vacuum suction cup 2, and the six pressure control zones include a circular pressure control zone in the center and a plurality of annular pressure control zones arranged in sequence from the circular pressure control zone to the circumference. These six pressure control zones correspond to the vacuum control of 4-inch wafers, 6-inch wafers, 8-inch wafers, 10-inch wafers, 12-inch wafers, and the iron ring placed on the blue film after the 12-inch wafer is diced and expanded, according to the radius from small to large. For example, when activating a 6-inch wafer, the vacuum adsorption of the pressure control zones corresponding to the 4-inch wafer and the 6-inch wafer is turned on; when activating the chip obtained after dicing and expanding the 12-inch wafer on the blue film, the vacuum adsorption of all six pressure control zones is turned on.

[0042] Exemplarily, the mask 4 is fixed on the surface of the iron ring by magnetic attraction.

[0043] It should be noted that the higher the coverage of the blue film 9 surface by the mask 4 and the chip 6 is, the better. However, there will inevitably be a gap between the aperture edge of the mask 4 and the edge of the chip. In practical applications, this gap should be minimized.

[0044] Exemplarily, the coverage rate of the mask 4 and the chip 6 on the surface of the blue film 9 is 90-110%.

[0045] Since the iron ring 10 has a thickness, the vertical distance between the mask 4 and the blue film 9 is 50-800 microns.

[0046] Exemplarily, a cooling system 8 is provided on the lower surface of the vacuum chuck 2 to prevent the high-temperature plasma from destroying the blue film adhesion layer and causing a large amount of particles to overflow, thereby reducing the contamination of the chip sample and the plasma activation chamber environment.

[0047] Illustratively, the cooling system 8 includes a cooling medium flow channel disposed on the lower surface of the vacuum chuck 2 in a U-shaped configuration. Coolant or air is circulated through the channel to remove heat generated by plasma activation, thereby reducing the temperature of the blue film chip caused by the plasma and preventing damage to the blue film and particle overflow caused by high temperatures.

[0048] The above is only a preferred specific implementation method of the present invention, but the protection scope of the present invention is not limited to this. Any changes or replacements that can be easily thought of by any technician familiar with this technical field within the technical scope disclosed in the present invention should be covered by the protection scope of the present invention.

Claims

1. A plasma activation device, characterized in that: The plasma activation device includes a chamber, a vacuum chuck, a plasma source and a mask arranged in the chamber; The mask is located above the vacuum chuck, and a plurality of apertures corresponding to the chips are arranged on the mask.

2. The plasma activation device according to claim 1, characterized in that The mask plate includes a plurality of mask sheets, each of which is provided with apertures of different shapes. The apertures formed by superimposing the plurality of different mask sheets correspond to chips of different shapes.

3. The plasma activation device according to claim 1, wherein: The pores are in the shape of a circle, a square and a rectangle.

4. The plasma activation device according to claim 1, wherein: A vacuum pipeline is arranged under the vacuum suction cup.

5. The plasma activation device according to claim 4, characterized in that The diameter of the vacuum suction cup is not less than 400 mm.

6. The plasma activation device according to claim 5, characterized in that The vacuum suction cup is provided with a plurality of pressure control areas arranged in sequence from the center to the circumference, each pressure control area is provided with an air hole, and the air hole is communicated with the vacuum pipeline.

7. The plasma activation device according to claim 6, characterized in that Six pressure control areas are provided on the vacuum suction cup, and the six pressure control areas include a circular pressure control area in the center and a plurality of annular pressure control areas arranged sequentially from the circular pressure control area to the circumference.

8. The plasma activation device according to claim 1, wherein: The mask is fixed on the surface of the iron ring by magnetic attraction.

9. The plasma activation device according to claim 1, wherein: The lower surface of the vacuum suction cup is provided with a cooling system.

10. The plasma activation device according to claim 9, characterized in that The cooling system includes a cooling medium flow channel arranged on the lower surface of the vacuum suction cup, and the cooling medium flow channel is arranged in a "U" shape.

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