Gas mixing device

Abstract

The utility model provides a gas mixing device, which relates to the technical field of semiconductor manufacturing and comprises a gas inlet pipe, an outer chamber and an inner chamber, the inner chamber is arranged in the outer chamber and communicated with the outer chamber, and the inner chamber and the outer chamber are both used for gas mixing; the gas inlet pipe penetrates through the outer cavity, is connected with the inner cavity and is used for introducing the gas into the inner cavity; a guide plate is arranged at the connecting position of the air inlet pipe and the inner cavity, a plurality of guide through holes are evenly formed in the guide plate, and the sections of the guide through holes are gradually increased in the direction towards the inner cavity. The gas can be fully mixed, and the uniformity of a subsequent etched wafer is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a gas mixing device. Background Art

[0002] In the development of wafer manufacturing, etching equipment plays an irreplaceable role. As semiconductor processes become more and more highly integrated, the performance of chips is gradually improving. This is mainly because the number of devices in a limited area increases exponentially. Therefore, this requires the critical dimensions of the devices to be gradually reduced. As the critical dimensions gradually decrease, the difficulty of ensuring uniformity will gradually increase. Therefore, ensuring the uniformity of the critical dimensions of all devices on the wafer is increasingly important for improving the yield of the devices. During the etching process, the gas is generally introduced into the reaction chamber through an inlet pipe. Factors such as the aperture size of the inlet pipe, the flow rate of the gas, and the mixing uniformity between the gases will also affect the mixing uniformity of the gas after entering the cavity. Therefore, this will also affect the uniformity of the critical dimensions of the etched structure during the etching process.

[0003] Existing devices for improving gas mixing uniformity optimize the gas mixing uniformity in a certain area by adjusting parameters such as the temperature, energy, and pressure of the equipment. Therefore, the gas mixing uniformity is not high, resulting in low uniformity of the etched wafer, and its improvement effect will be further limited at higher process nodes. Summary of the Invention

[0004] The present invention mainly provides a gas mixing device to solve the technical problems raised in the above background technology, such as low uniformity of gas mixing and low uniformity of etching wafers.

[0005] The technical solution adopted by the present invention to solve the above technical problems is:

[0006] A gas mixing device comprises an air inlet pipe, an outer chamber, and an inner chamber; the inner chamber is arranged in the outer chamber and communicates with the outer chamber, and the inner chamber and the outer chamber are both used for gas mixing; the air inlet pipe passes through the outer chamber and is connected to the inner chamber, and is used to pass the gas into the inner chamber; a guide plate is provided at the connection between the air inlet pipe and the inner chamber, and a plurality of guide through holes are evenly opened on the guide plate, and the cross-section of the guide through holes is gradually increased in the direction toward the inner chamber.

[0007] Optionally, the axial direction of the guide through hole forms an angle of 30° to 60° with the axial direction of the air intake pipe.

[0008] Optionally, the plurality of guide through holes are arranged close to each other in pairs, and the axial directions of the corresponding guide through holes intersect.

[0009] Optionally, the inner chamber is rotatably connected to the air inlet pipe, and when the air inlet pipe introduces the gas into the inner chamber, the inner chamber rotates.

[0010] Optionally, a plurality of evenly distributed connecting through holes are provided on the side walls and the bottom surface of the inner chamber, and the inner chamber is connected with the outer chamber through the plurality of connecting through holes.

[0011] Optionally, the cross-section of the connecting through hole is gradually increased in the direction toward the outer chamber.

[0012] Optionally, the plurality of connecting through holes are arranged close to each other in pairs, and the axial directions of the corresponding connecting through holes intersect.

[0013] Optionally, a heating resistance wire is provided on the side wall of the inner chamber for heating the gas.

[0014] Optionally, a plurality of air outlet holes are evenly provided at the bottom of the outer chamber, and the cross-sections of the air outlet holes are gradually increased in a direction toward the outside of the outer chamber.

[0015] Optionally, each of the air outlet holes is provided with a one-way air pressure valve.

[0016] The present application provides a device, in which an inner chamber is arranged in an outer chamber, and an air inlet pipe is connected to the inner chamber to introduce gas into the inner chamber. A guide plate is further arranged at one end of the air inlet pipe close to the inner chamber, and guide holes are evenly opened on the guide plate. The cross-section of the guide holes is set to increase along the flow direction of the gas, so that when the gas enters the inner chamber from the air inlet pipe, the flow speed of the gas is slowed down, the gas can be fully mixed, and the uniformity of subsequent wafer etching is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solution of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0018] Figure 1 Schematic diagram of the structure of the gas mixing device of this application Figure 1 ;

[0019] Figure 2 This is a schematic diagram of the structure of the intake pipe and the inner chamber of this application;

[0020] Figure 3 This is a schematic diagram of the structure of the heating resistance wire of this application;

[0021] Figure 4This is a schematic diagram of the structure of the intake pipe of this application;

[0022] Figure 5 Schematic diagram of the structure of the gas mixing device of this application Figure 2 .

[0023] Icon: 100-outer chamber; 110-air outlet hole; 200-inner chamber; 210-connecting hole; 220-heating resistance wire; 300-inlet pipe; 310-guide plate; 311-guide hole.

[0024] The realization of the objectives, functional features and advantages of this application will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0025] To make the objectives, technical solutions, and advantages of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0026] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative position relationship, movement status, etc. between the various components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0027] In this application, unless otherwise specified or limited, the terms "connection" and "fixation" should be understood in a broad sense. For example, "fixation" can mean fixed connection, detachable connection, or integration; it can mean mechanical connection or electrical connection; it can mean direct connection or indirect connection through an intermediate medium; it can mean internal communication between two elements or interaction between two elements, unless otherwise specified. For those skilled in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0028] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present application, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or suggesting their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of such features. In addition, the meaning of "and / or" appearing throughout the text includes three parallel schemes. Taking "A and / or B" as an example, it includes scheme A, or scheme B, or a scheme in which A and B are satisfied at the same time. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement it. When the combination of technical solutions is mutually contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0029] Existing devices for improving gas mixing uniformity optimize the gas mixing uniformity in a specific area by adjusting parameters such as the device's temperature, energy, and pressure. Consequently, the gas mixing uniformity is not high, resulting in low uniformity in the etched wafers. To address the above issues, the embodiments of this application provide the following technical solutions to overcome them.

[0030] Please refer to Figures 1 to 4 , an embodiment of the present application provides a gas mixing device, including an air inlet pipe 300, an outer chamber 100, and an inner chamber 200; the inner chamber 200 is arranged in the outer chamber 100 and communicates with the outer chamber 100, and the inner chamber 200 and the outer chamber 100 are both used for gas mixing; the air inlet pipe 300 passes through the outer chamber 100 and is connected to the inner chamber 200, and is used to pass the gas into the inner chamber 200; a guide plate 310 is provided at the connection between the air inlet pipe 300 and the inner chamber 200, and a plurality of guide through holes 311 are evenly opened on the guide plate 310, and the cross-section of the guide through holes 311 is gradually increased in the direction toward the inner chamber 200.

[0031] Specifically, the air inlet pipe 300 is a passage for gas to enter the inner chamber 200. The inner chamber 200 is disposed within and communicates with the outer chamber 100. After the gas enters the inner chamber 200 from the air inlet pipe 300 and mixes, it enters the outer chamber 100 from the inner chamber 200 for further mixing. A guide plate 310 is provided at one end of the air inlet pipe 300 connected to the inner chamber 200. A guide hole 311 is provided on the guide plate 310 for gas to pass through. It should be noted that the cross-section of the guide hole 311 is gradually increased along the direction from the air inlet pipe 300 to the inner chamber 200. It is understandable that the cross-section of the guide hole 311 gradually increases along the direction of gas flow. This arrangement is conducive to slowing down the gas flow rate when the gas enters the inner chamber 200, increasing the gas mixing time and further improving the gas mixing degree.

[0032] Furthermore, the air intake pipe 300 is made of stainless steel or other corrosion-resistant and high-temperature-resistant materials to ensure stability and durability in various gas environments.

[0033] It is understandable that there are many ways to set the guide plate 310 on one end of the intake pipe 300, and no specific restrictions are made here. It is only necessary that the guide plate 310 is fixed to the end of the intake pipe 300 facing the inner chamber 200. In the embodiment of the present application, a thread can be designed at the end of the intake pipe 300 facing the inner chamber 200 to make the guide plate 310 threadedly connected to the intake pipe 300, and a flange can also be designed at the end of the guide pipe facing the inner chamber 200 for connecting the guide plate 310, thereby realizing a detachable connection of the guide plate 310, improving the replaceability of the guide plate 310, facilitating the replacement of the guide plate 310 when it is damaged, and saving the maintenance cost of the device.

[0034] It should be noted that, in this embodiment, the inner chamber 200 is disposed within the outer chamber 100, typically located at the center of the outer chamber 100, to ensure uniform gas flow between the inner and outer chambers 100. The shape of the inner chamber 200 may be spherical, elliptical, or cylindrical, and in this embodiment, is preferably cylindrical. The shape of the outer chamber 100 is also preferably cylindrical, and the diameter of the outer chamber 100 is the same as that of the wafer to be etched, which can improve the etching efficiency of the wafer.

[0035] The present application provides a gas mixing device, which is arranged in an outer chamber 100 through an inner chamber 200, and an air inlet pipe 300 is connected to the inner chamber 200 to introduce gas into the inner chamber 200. A guide plate 310 is further provided at one end of the air inlet pipe 300 close to the inner chamber 200, and guide holes 311 are evenly opened on the guide plate 310. The cross-section of the guide holes 311 is increased along the flow direction of the gas, so that when the gas enters the inner chamber 200 from the air inlet pipe 300, the gas flow speed is slowed down, the gas can be fully mixed, and the uniformity of subsequent wafer etching is improved.

[0036] In the embodiment of the present application, the axial direction of the guide through hole 311 and the axial direction of the air intake pipe 300 form an angle of 30° to 60°.

[0037] Specifically, the axial direction of the guide hole 311 and the axial direction of the intake pipe 300 need to have a certain angle to generate vortexes after the gas enters the inner chamber 200, thereby increasing the chance of collisions between gas molecules within the inner chamber 200. The axial direction of the guide hole 311 and the axial direction of the intake pipe 300 are designed to form an angle of 30° to 60°. An angle within this range can balance the stability of the gas flow, the gas flow range, and the mixing efficiency. A smaller angle may result in a shorter gas flow range and lower mixing efficiency; while a larger angle may cause the gas flow to affect the stability of the device.

[0038] In practice, the performance of the gas mixing device can be optimized by adjusting the angle of the guide holes 311. For example, if the gas mixing efficiency is insufficient, the angle can be increased to 50° or 60° to enhance the swirl effect of the gas flow. Conversely, if the device stability is affected, the angle can be reduced to 30° or 40° to reduce the turbulence of the gas flow.

[0039] Through the above-mentioned design, the gas mixing device can adapt to different gas mixing requirements and provide an efficient and uniform gas mixing solution for the semiconductor manufacturing process.

[0040] In the embodiment of the present application, the plurality of guide through holes 311 are arranged close to each other in pairs, and the axial directions of the corresponding guide through holes 311 intersect with each other.

[0041] Specifically, the guide holes 311 are arranged close to each other in pairs, and the corresponding guide holes 311 intersect axially, which optimizes the gas flow path and improves the mixing efficiency of the gas in the inner chamber 200. The corresponding guide holes 311 intersect axially, so that the gases entering from the corresponding guide holes 311 intersect on the gas flow path, further allowing the gas molecules to fully collide and mix.

[0042] The guide holes 311 are arranged in the above-mentioned manner, which can enable the gas molecules to fully collide and mix, adapt to different gas mixing requirements, and provide an efficient and uniform gas mixing solution for the semiconductor manufacturing process.

[0043] In an embodiment of the present application, the inner chamber 200 is rotatably connected to the air inlet pipe 300 , and when the air inlet pipe 300 introduces the gas into the inner chamber 200 , the inner chamber 200 rotates.

[0044] Specifically, the rotational connection between the inner chamber 200 and the intake pipe 300 can be achieved in a variety of ways, such as using a rotary joint, a universal joint or a flexible connector. These connection methods allow the inner chamber 200 to rotate freely when the intake pipe 300 is fixed. The rotation of the inner chamber 200 is achieved by a drive mechanism, which can be an electric motor, a pneumatic motor or a hydraulic motor. The rotation speed of the inner chamber 200 can be adjusted according to the requirements of gas mixing. For example, the motor can be equipped with a frequency converter or a continuously variable transmission to adjust the rotation speed. The rotation speed may range from tens to thousands of revolutions per minute.

[0045] It will be appreciated that the inner chamber 200 can be designed to rotate clockwise, counterclockwise, or both. Changing the direction of rotation can help further mix the gases, as different rotation directions may affect the gas flow pattern. Safety and sealing must be considered when designing rotary joints. The rotary joint must be able to withstand a certain pressure and prevent gas leakage.

[0046] The rotation of the inner chamber 200 significantly improves the efficiency of gas mixing. The rotation increases the chances of gas molecules colliding within the inner chamber 200, accelerating the mixing process. Furthermore, the rotation helps eliminate dead spots in gas flow, ensuring uniform mixing of gases throughout the inner chamber 200. This is crucial for improving wafer etching uniformity during semiconductor manufacturing.

[0047] In practice, the performance of the gas mixing device can be optimized by adjusting the motor speed and direction of rotation. For example, if the gas mixing efficiency is insufficient, you can try increasing the speed or changing the direction of rotation. Conversely, if the device stability is affected, you can try reducing the speed or changing the direction of rotation.

[0048] With this design, the gas mixing device can adapt to different gas mixing requirements and provide an efficient and uniform gas mixing solution for the semiconductor manufacturing process.

[0049] In the embodiment of the present application, a plurality of evenly distributed connecting through holes 210 are provided on the sidewall and bottom surface of the inner chamber 200 , and the inner chamber 200 is connected to the outer chamber 100 through the plurality of connecting through holes 210 .

[0050] Specifically, multiple connecting holes 210 are evenly distributed on the sidewalls and bottom surface of the inner chamber 200. The number of connecting holes 210 can be designed based on the requirements of gas flow rate and mixing efficiency. 12, 24, or even more connecting holes 210 can be designed to ensure uniform distribution of gas between the inner and outer chambers 100. The cross-section of the connecting holes 210 can be circular, elliptical, or rectangular, and its size is designed based on the required gas flow rate. When the inner chamber 200 rotates, the gas flowing from the connecting holes 210 to the outer chamber 100 can be better mixed, further increasing the probability of gas molecule collisions.

[0051] In the embodiment of the present application, the cross-section of the connecting through hole 210 is gradually increased in the direction toward the outer chamber 100 .

[0052] Specifically, the connecting hole 210 has a smaller cross-section at the end closest to the inner chamber 200, while the cross-section gradually increases at the end closest to the outer chamber 100. This design, similar to a nozzle or diffuser, reduces pressure loss during gas flow, slows the gas flow rate, and increases the uniformity of gas mixing. The increase in the cross-section of the connecting hole 210 needs to be designed based on the required gas flow rate and mixing efficiency. The increase should not be too large to avoid excessive gas flow and inadequate mixing, nor too small to avoid unnecessary pressure loss.

[0053] In practice, the performance of the gas mixing device can be optimized by adjusting the expansion ratio and shape of the connecting through-holes 210. For example, if gas mixing efficiency is insufficient, the expansion ratio can be increased or the cross-sectional shape can be modified. Conversely, if device stability is affected, the expansion ratio can be reduced or the cross-sectional shape can be adjusted. This design allows the gas mixing device to adapt to varying gas mixing requirements, providing an efficient and uniform gas mixing solution for semiconductor manufacturing processes.

[0054] In the embodiment of the present application, the plurality of connecting through holes 210 are arranged close to each other in pairs, and the axial directions of the corresponding connecting through holes 210 intersect with each other.

[0055] Specifically, the plurality of connecting through holes 210 are arranged close to each other, and the axial directions of the corresponding connecting through holes 210 intersect. This design helps promote mixing of gases between the inner and outer chambers 100, because the intersecting axial directions can increase the complexity of gas flow, thereby increasing the chance of collision between gas molecules.

[0056] In an embodiment of the present application, a heating resistance wire 220 is provided on the side wall of the inner chamber 200 for heating the gas.

[0057] Specifically, the heating resistance wire 220 is usually made of nickel-chromium alloy or other materials with high resistivity and good temperature resistance. These materials can generate heat quickly after being energized and can withstand long-term high-temperature working conditions. The heating resistance wire 220 can be spiral, linear or other shapes, and is designed according to the size and shape of the inner chamber 200. Spiral resistance wire usually has a larger surface area, which is conducive to more efficient heat transfer. The heating resistance wire 220 is arranged on the side wall or bottom surface of the inner chamber 200 to ensure that the gas can fully contact the heating element when passing through the inner chamber 200 to achieve uniform heating. The power of the heating resistance wire 220 is designed according to the gas flow rate, the required heating temperature and the mixing efficiency requirements. The power of the heating resistance wire 220 can be accurately controlled by a frequency converter or a temperature controller to adjust the heating temperature.

[0058] It is understandable that heating the gas can change the flow characteristics of the gas, reduce the dead zone of the gas flow, and improve the uniformity of gas mixing.

[0059] Please refer to Figures 1 to 5 In an embodiment of the present application, a plurality of air outlet holes 110 are evenly provided at the bottom of the outer chamber 100 , and the cross-section of the air outlet holes 110 is gradually increased along the direction toward the outside of the outer chamber 100 .

[0060] Specifically, the gas outlet hole 110 has a smaller cross-section at one end near the inner side of the outer chamber 100, while the cross-section gradually increases at the end near the outer side of the outer chamber 100. This design is similar to a nozzle or diffuser, which slows down the flow of gas and enables the gas to better etch the wafer.

[0061] In the embodiment of the present application, each of the air outlet holes 110 is provided with a one-way air pressure valve.

[0062] Specifically, the one-way pressure valve provided on the gas outlet hole 110 is designed to ensure controllable gas flow direction, prevent gas backflow, and maintain stable and uniform gas mixing. This ensures that gas flows out of the outer chamber 100 and etches the wafer. The one-way pressure valve is normally closed. When the pressure in the outer chamber 100 reaches a certain level, the valve opens and gas flows out, ensuring a stable mixing time and degree of gas mixing within the outer chamber 100.

[0063] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A gas mixing device, characterized in that: It includes an air intake pipe, an outer chamber, and an inner chamber; The inner chamber is arranged in the outer chamber and communicates with the outer chamber, and both the inner chamber and the outer chamber are used for gas mixing; The air inlet pipe passes through the outer chamber and is connected to the inner chamber, and is used to introduce the gas into the inner chamber; A guide plate is provided at the connection between the air inlet pipe and the inner chamber. A plurality of guide through holes are evenly provided on the guide plate, and the cross-sections of the guide through holes are gradually increased along the direction toward the inner chamber.

2. The gas mixing device according to claim 1, characterized in that: The axial direction of the guide through hole forms an angle of 30° to 60° with the axial direction of the air intake pipe.

3. The gas mixing device according to claim 2, characterized in that: The plurality of guide through holes are arranged close to each other in pairs, and the axial directions of the corresponding guide through holes intersect.

4. The gas mixing device according to claim 3, characterized in that: The inner chamber is rotatably connected to the air inlet pipe. When the air inlet pipe introduces the gas into the inner chamber, the inner chamber rotates.

5. The gas mixing device according to claim 4, characterized in that: A plurality of evenly distributed connecting through holes are provided on the side wall and the bottom surface of the inner chamber, and the inner chamber is connected with the outer chamber through the plurality of connecting through holes.

6. The gas mixing device according to claim 5, characterized in that: Along the direction toward the outer chamber, the cross section of the connecting through hole is gradually increased.

7. The gas mixing device according to claim 6, characterized in that: The plurality of connecting through holes are arranged close to each other in pairs, and the axial directions of the corresponding connecting through holes intersect with each other.

8. The gas mixing device according to claim 7, characterized in that: A heating resistance wire is provided on the side wall of the inner chamber for heating the gas.

9. The gas mixing device according to any one of claims 1 to 8, characterized in that: A plurality of air outlet holes are evenly arranged on the bottom of the outer chamber, and the cross-sections of the air outlet holes are gradually increased in the direction toward the outside of the outer chamber.

10. The gas mixing device according to claim 9, characterized in that: Each of the air outlet holes is provided with a one-way air pressure valve.

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