Cleaning device and polishing machine table

Abstract

The embodiment of the utility model discloses a cleaning device and a polishing machine table. The cleaning device comprises a bearing disc and a cleaning device, the bracket is located on the bearing disc; the bracket is used for bearing a wafer; the bracket comprises an annular outer frame and a plurality of supporting ribs; one end of each supporting rib is fixedly connected with the annular outer frame, and the multiple supporting ribs are distributed on the inner side of the annular outer frame in the circumferential direction of the annular outer frame at intervals; one side, far away from the bearing disc, of the supporting rib is provided with a ridge facing the wafer, the ridge is provided with two side walls, and the ends, far away from the bearing disc, of the two side walls intersect to form a supporting part used for supporting or facing the wafer; and the spray head is arranged on the bearing disc, and the spray head is configured to spray cleaning liquid to the wafer.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the field of semiconductor technology, and more particularly to a cleaning device and a polishing machine. Background Art

[0002] Chemical Mechanical Polishing (CMP) is a key process for wafer surface planarization during integrated circuit manufacturing. Unlike some purely mechanical polishing and lapping processes, CMP combines surface chemistry with mechanical lapping to remove micron / nanometer-scale material from the wafer surface, achieving minimal surface removal and a higher surface flatness.

[0003] The main working principle of the CMP process is that under a certain pressure and in the presence of a slurry, the wafer being polished moves relative to the polishing pad. With the help of the highly organic combination of the mechanical grinding action of the nanoabrasive and the chemical action of various chemical reagents, the surface of the polished wafer is highly flattened, meeting the process requirements of low surface roughness and low defects. When performing the CMP process, the wafer is adsorbed by the grinding head, and the grinding head also applies vertical downward pressure to the wafer to make the wafer close to the surface of the polishing pad, and drives the wafer to rotate so that the wafer and the polishing pad are rubbed under the wetting of the polishing liquid, thereby grinding and polishing the wafer surface. When the wafer undergoes the CMP process, a cleaning device is needed to clean or wet the wafer. Excessive cleaning liquid remaining on the cleaning device may react with some film layers on the wafer surface to cause defects, reducing the CMP yield. There is still some room for improvement in the cleaning device adapted to the CMP machine. Utility Model Content

[0004] According to some aspects of the embodiments of the present disclosure, there is provided a cleaning device, comprising:

[0005] A carrier plate; a bracket located on the carrier plate; the bracket is used to carry a wafer; the bracket includes an annular outer frame and a plurality of support ribs; one end of the support rib is fixedly connected to the annular outer frame, and a plurality of the support ribs are spaced apart on the inner side of the annular outer frame along the circumferential direction of the annular outer frame; the support rib has a ridge facing the wafer on the side away from the carrier plate, and the ridge is provided with two side walls, and the two side walls intersect at the end away from the carrier plate to form a support portion for supporting or facing the wafer; a nozzle is provided on the carrier plate, and the nozzle is configured to spray a cleaning liquid onto the wafer.

[0006] In some embodiments, the bracket further includes: a connecting portion, the end of the support rib away from the annular outer frame is fixedly connected to the connecting portion; the cross-sectional shape of the ridge in the plane intersecting with the surface of the supporting plate includes: a triangle, and the angle of the triangle toward the wafer is greater than 90 degrees.

[0007] In some embodiments, the height of the annular outer frame protruding from the surface of the carrier plate is greater than the height of the connecting portion protruding from the surface of the carrier plate; the height of the supporting rib protruding from the carrier plate gradually decreases in the direction from the annular outer frame to the connecting portion.

[0008] In some embodiments, an extension direction of the support ribs away from the annular outer frame forms an angle with the surface of the carrier plate, and the angle is greater than 0 degrees and less than 90 degrees.

[0009] In some embodiments, the end of the support rib away from the annular outer frame is fixedly connected to the connecting part, and the cleaning device also includes: a hollow protrusion, located at the end of the support rib away from the connecting part, and the protrusion is used to support the wafer; the protrusion protrudes away from the supporting plate relative to the annular outer frame, and the end of the protrusion away from the annular outer frame has a water outlet; a water pressure sensor is arranged inside the protrusion; the water pressure sensor is configured to: detect the water outlet pressure of the protrusion.

[0010] In some embodiments, the supporting rib includes a hollow tube, and the hollow tube is connected to the protrusion.

[0011] In some embodiments, the support rib includes: a first part and a second part that are fixedly connected, the first part is located on the side of the second part away from the supporting plate; the first part includes the ridge and the hollow pipe, the hollow pipe is embedded in the second part, and the ridge is located on the side of the hollow pipe away from the supporting plate.

[0012] In some embodiments, the connecting portion is a hollow cavity, and the connecting portion is connected to the hollow pipe inside the supporting rib; the connecting portion is connected to the liquid supply pipe.

[0013] In some embodiments, the cleaning device is configured to align with the grinding head in a direction perpendicular to the surface of the carrier plate and clean the grinding head, the grinding head is provided with a diaphragm and a retaining ring located at the edge of the diaphragm and surrounding the diaphragm, and there is a gap between the diaphragm and the retaining ring; the nozzle is embedded in the carrier plate, and the nozzle is exposed on the side surface of the carrier plate close to the wafer, and the nozzle includes: a first nozzle, corresponding to the retaining ring; a second nozzle, corresponding to the gap; a third nozzle, corresponding to the diaphragm; wherein the second nozzle is configured to: spray columnar cleaning liquid and adjust the spray angle.

[0014] According to some aspects of the embodiments of the present disclosure, a polishing machine is provided, comprising: the cleaning device described above; the polishing machine also comprising: a grinding table for carrying a polishing pad; a grinding head; the grinding head is used to adsorb a wafer and apply pressure to the wafer so that the wafer is close to the polishing pad, and the grinding head drives the wafer to rotate on the polishing pad; a dressing assembly, comprising a dressing arm and a dressing head; the dressing arm drives the dressing head to be close to the polishing pad and swing horizontally on the polishing pad, and the dressing head rotates; a liquid supply assembly, for providing grinding liquid to the surface of the polishing pad.

[0015] The embodiment of the present disclosure provides a cleaning device including: a carrier plate and a bracket arranged on the carrier plate, the bracket is used to face or carry the wafer, the bracket includes an annular outer frame, a plurality of supporting ribs, one end of the supporting rib is fixedly connected to the annular outer frame, and the plurality of supporting ribs are spaced apart on the inner side of the annular outer frame along the circumferential direction of the annular outer frame; the supporting rib has a ridge facing the wafer on the side away from the carrier plate, the ridge is provided with two side walls, and the two side walls intersect at the end away from the carrier plate to form a supporting portion for supporting or facing the wafer; a nozzle is arranged on the carrier plate, the nozzle is configured to spray cleaning liquid to clean the wafer or the grinding head; the supporting portion of the ridge can reduce the residue of cleaning liquid, reduce the contact between the wafer surface and the residual liquid on the supporting ribs, reduce the surface defects of the wafer, and improve the CMP yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a schematic structural diagram of an exemplary polishing machine according to an embodiment of the present disclosure;

[0017] Figure 2 is a schematic structural diagram of an exemplary grinding head according to an embodiment of the present disclosure;

[0018] Figures 3 to 6 This is a schematic diagram of the structure of an exemplary cleaning device according to an embodiment of the present disclosure. Figure 1 ;

[0019] Figure 7 is a schematic diagram showing an exemplary wafer defect distribution according to an embodiment of the present disclosure;

[0020] Figures 8 to 13 This is a schematic diagram of the structure of an exemplary cleaning device according to an embodiment of the present disclosure. Figure 2 . DETAILED DESCRIPTION

[0021] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments described herein. Instead, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0022] In the following description, numerous specific details are provided to provide a more thorough understanding of the present disclosure. However, it will be apparent to those skilled in the art that the present disclosure can be practiced without one or more of these details. In other instances, certain technical features known in the art are not described to avoid confusion with the present disclosure; that is, all features of actual embodiments are not described herein, nor are well-known functions and structures described in detail.

[0023] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to, or coupled to" another element or layer, it may be directly on, adjacent to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on, directly adjacent to, directly connected to, or directly coupled to" another element or layer, there may be no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part. However, when the second element, component, region, layer, or part is discussed, it does not necessarily mean that the first element, component, region, layer, or part exists in the present disclosure.

[0024] It should be understood that “some embodiments” or “an embodiment” mentioned throughout the specification means that specific features, structures or characteristics related to the embodiments are included in at least one embodiment of the present disclosure. Therefore, “in some embodiments” or “in an embodiment” appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in the various embodiments of the present disclosure, the size of the sequence numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present disclosure.

[0025] According to some aspects of the embodiments of the present disclosure, Figure 1 An exemplary polishing machine 100 is provided. The polishing machine 100 may be a CMP machine. The polishing machine 100 may include:

[0026] A grinding table 101 for carrying a polishing pad 102;

[0027] The grinding head 103 is used to absorb the wafer (eg, Figure 5 The polishing head 103 drives the wafer 200 to rotate on the polishing pad 102;

[0028] The cleaning device 110 is located on one side of the grinding table 101 in the horizontal direction, such as on one side of the grinding table 101 in the x direction. The cleaning device 110 includes a plurality of nozzles 113. The plurality of nozzles 113 are connected to a liquid supply pipe to spray cleaning liquid. The plurality of nozzles 113 spray cleaning liquid to clean the wafer 200 or the grinding head 103 above the nozzles 113, reduce the adhesion of the grinding liquid and grinding byproducts, or wet the wafer 200 or the grinding head 103.

[0029] The dressing assembly 104 includes a dressing arm and a dressing head. The dressing arm drives the dressing head to closely contact the polishing pad 102 and swing horizontally on the polishing pad 102. The dressing head can rotate to clean the polishing slurry accumulated on the polishing pad 102 and keep the polishing pad 102 flat.

[0030] The liquid supply component 105 is used to provide polishing liquid to the surface of the polishing pad 102; the liquid supply component 105 can be connected to the polishing liquid storage device of the machine, or connected to the liquid distribution device of the factory system.

[0031] In some embodiments, reference Figure 1As shown, the grinding table 101 can be set on the supporting seat, and the polishing pad 102 is fixed to the surface of the grinding table 101. The fixing method can be adhesive bonding. The polishing pad 102 is a replaceable consumable. The grinding head 103 can be set on the grinding table 101. The grinding head 103 can have a flexible chamber to absorb and fix the wafer 200. Figure 2 The flexible buffer diaphragm 1031 and the retaining ring 1032 surrounding the edge of the diaphragm 1031 are shown. The diaphragm 1031 may include a flexible material such as rubber, polyurethane, etc. that can produce elastic deformation under external force. The retaining ring 1032 can protrude toward the grinding table 101. The retaining ring 1032 and the diaphragm 1031 form a chamber to fix and accommodate the wafer 200. The grinding head 103 is aligned with the wafer support table located on the horizontal side of the grinding table 101 and moves downward to contact the wafer 200 placed on the wafer support table. The wafer 200 is inserted into the retaining ring 1032. The deformation of the diaphragm 1031 squeezes out the internal air to generate a vacuum adsorption force or holding force to fix the wafer 200.

[0032] Alternatively, a wafer 200 that has not undergone CMP can be placed on the cleaning device 110. The nozzle 113 of the cleaning device 110 sprays cleaning liquid to clean or wet the wafer 200. The grinding head 103 moves to the cleaning device 110 to pick up the wafer 200. The grinding head 103 absorbs the wafer 200 and moves horizontally to the grinding table 101. It moves downward in the z direction (vertical direction) to contact the polishing pad 102 and applies pressure to the wafer 200 so that the wafer 200 is close to the polishing pad 102. The grinding head 103 can also drive the wafer 200 to rotate horizontally and grind on the polishing pad 102 to perform the CMP process. After the CMP process is completed, the wafer 200 can be carried to the cleaning device 110, desorbed and placed on the cleaning device 110. After the cleaning device 110 cleans the wafer 200, the robotic arm transfers the wafer 200 to the next process. The cleaning device 110 can clean the polishing head 103 that has not absorbed the wafer 200 , so as to reduce the residual polishing liquid and polishing by-products in the polishing head 103 , and reduce wafer 200 breakage and wafer 200 defects.

[0033] In some embodiments, reference Figure 2As shown, the retaining ring 1032 can protrude from the wafer 200 to prevent the wafer 200 from shifting when the wafer 200 contacts the polishing pad 102 for grinding. The retaining ring 1032 can also contact the polishing pad 102. The retaining ring 1032 is more wear-resistant than the wafer 200. The retaining ring 1032 has a lower grinding rate or is essentially unworn on the surface of the polishing pad 102. The retaining ring 1032 and the diaphragm 1031 are replaceable consumable parts. The end of the retaining ring 1032 protruding from the wafer 200 and pointing toward the polishing pad 102 can have a groove 1034 for conducting the polishing liquid and reducing splashing of the polishing liquid. Adapting to the shape of the wafer 200, the grinding head 103, the diaphragm 1031, and the retaining ring 1032 can be circular to adapt to the shape and size of the wafer 200.

[0034] The grinding table 101 can be stationary or rotate relative to the grinding head 103 in the opposite direction of rotation. The dressing assembly 104 can include a dressing arm and a dressing head, which can be set on one side of the grinding table 101. The dressing arm can drive the rotating dressing head to swing to dress and clean the surface of the polishing pad 102, making the polishing pad 102 smooth and wrinkle-free, and can also remove the grinding liquid and grinding by-products on the polishing pad 102. The liquid supply assembly 105 provides grinding liquid to the surface of the polishing pad 102. The grinding liquid may include components such as aluminum oxide, silicon dioxide, polyurethane, water, surfactants, or various small-sized microspheres formed from the above-mentioned aluminum oxide, silicon dioxide, polyurethane and other materials. The liquid supply assembly 105 can be connected to the liquid storage tank or mixing system of the machine through a pipeline to obtain the grinding liquid and supply it to the surface of the polishing pad 102.

[0035] During the CMP process, the chemical components in the grinding liquid can react chemically with the materials to be removed from the surface of the wafer 200, softening these materials or converting them into easily soluble substances. This step helps to reduce the hardness of the material surface, making it easier to remove mechanically. Through the relative movement between the polishing pad 102 and the wafer 200, and the applied pressure, the abrasive in the grinding liquid and the polishing pad 102 physically remove the surface of the wafer 200. This mechanical action effectively removes the softened material, thereby achieving the flattening of the material surface. The combined use of chemical and mechanical actions can avoid processing damage caused by relying solely on mechanical polishing, as well as the problems of low polishing efficiency and poor surface flatness caused by using only chemical polishing.

[0036] In some embodiments, the polishing pad 102 may have strip-shaped or annular grooves on its surface. The grooves can increase the surface roughness of the polishing pad 102, distribute the polishing liquid more evenly on the surface of the polishing pad 102, and discharge byproducts produced by polishing the wafers 200. As the polishing pad 102 is used over time, it will be consumed and the depth of the grooves on the surface of the polishing pad 102 will decrease. When the polishing time or the number of wafers 200 polished by the polishing pad 102 reaches a certain set value, the polishing pad 102 needs to be replaced.

[0037] In some embodiments, reference Figure 2 As shown, a diaphragm 1031 and a retaining ring 1032 located at the edge of the diaphragm 1031 and surrounding the diaphragm 1031 are provided on one side of the grinding head 103 that adsorbs the wafer 200. A gas flow channel or chamber can be provided on the back side of the diaphragm 1031 that does not contact the wafer 200, or on the side away from the wafer 200. Air can be pumped on the back side of the diaphragm 1031 that does not contact the wafer 200 to deform the diaphragm 1031 and adsorb the wafer 200. After the wafer 200 contacts the polishing pad 102, air can be ventilated on the back side of the diaphragm 1031 so that the diaphragm 1031 presses the wafer 200 and the wafer 200 is close to the polishing pad 102, thereby increasing friction and improving grinding efficiency. In some other embodiments, the grinding head 103 may be provided with an air guide channel or an air guide groove on the back side of the diaphragm 1031, and the diaphragm 1031 may be provided with air holes connected to the air guide channel. The air guide channel adsorbs the wafer 200 when vacuuming, and presses the wafer 200 or adsorbs and releases the wafer 200 when jetting air; or the air guide channel is connected to the gap 1033 between the diaphragm 1031 and the retaining ring 1032 to achieve vacuum adsorption of the wafer 200.

[0038] In some embodiments, reference Figure 3 As shown, the grinding head 103 can move to the top of the cleaning device 110 and align with the cleaning device 110. The multiple nozzles 113 of the cleaning device 110 spray cleaning liquid to clean the grinding head 103. The grinding head 103 can attract the wafer 200 and align it with the cleaning device 110, and place the wafer 200 on the cleaning device 110 for cleaning, or the grinding head 103 can pick up the wafer 200 on the cleaning device 110 and move it to the grinding table 101 for grinding and polishing. Figure 3The cleaning device 110 includes a plurality of nozzles 113 and a bump 114 that contacts the wafer 200 when carrying the wafer 200. A water pressure sensor can be provided in the hollow cavity inside the bump 114. The bump 114 has a water outlet. The water pressure sensor is configured to detect the water pressure at the water outlet of the bump 114. By detecting the change in water pressure of the water pressure sensor, it can be detected whether the wafer 200 is carried on the bump 114. For example, when the wafer 200 contacts the bump 114, the water outlet covering the top of the bump 114 will increase the water pressure at the water outlet. At this time, it can be detected that the wafer 200 has reached the carrying position; if the pressure of the water pressure sensor does not increase, it can be indicated that the wafer 200 has not reached the carrying position. A water outlet can also be provided on the side wall of the bump 114.

[0039] In some embodiments, Figure 3 and Figure 4 A schematic diagram of a cleaning device 110 in the xoy plane is provided. The cleaning device 110 may include: a carrier plate 111; a bracket 121 located on the carrier plate 111; the bracket 121 is used to face or support the wafer 200; the bracket 121 includes an annular outer frame 122, a plurality of support ribs 123, and a connecting portion 124; one end of the support rib 123 is fixedly connected to the annular outer frame 122, and the other end of the support rib 123 is fixedly connected to the connecting portion 124;

[0040] The nozzle 113 is embedded in the carrier plate 111 . The nozzle 113 is exposed on the surface of the carrier plate 111 close to the wafer 200 . The nozzle 113 is configured to spray cleaning liquid. The nozzle 113 may include a first nozzle 1131 , a second nozzle 1132 and a third nozzle 1133 .

[0041] The carrier plate 111 can be adapted to the circular shape of the wafer 200. A liquid supply pipe and a liquid drain pipe can be set inside the carrier plate 111. The liquid supply pipe is connected to the multiple nozzles 113 to supply the cleaning liquid. The liquid drain pipe can be connected to the drainage hole on the upper surface of the carrier plate 111. The liquid drain pipe can collect the cleaning liquid and discharge it to the sewage treatment device of the machine or the factory for collection. The liquid supply pipe of the machine can be connected to the liquid infusion pipe of the factory, or to the liquid mixing device or liquid storage device of the machine. The cleaning liquid may include but is not limited to: deionized water, ultrapure water or weak acid, weak alkaline cleaning liquid including surfactant. The grinding head 103 can provide impact force when rotating to improve the cleaning efficiency. The carrier plate 111 can be located in a cavity with an upper end opening. The side wall of the cavity surrounds the carrier plate to provide protection for the carrier plate 111 and prevent the cleaning liquid from splashing. A drain outlet can be set at the bottom of the cavity, which is connected to the waste liquid collection device of the machine. The drain outlet is used to discharge the cleaning liquid. The side of the carrier plate where the nozzle is set is exposed from the opening of the cavity, and is aligned with the grinding head 103 and faces the grinding head 103.

[0042] The bracket 121 can be a wheel structure, the annular outer frame 122 can be adapted to the circular shape of the wafer 200, and the support ribs 123 can be a strip structure, one end of which is fixedly connected to the outer frame and the other end is connected to the connecting portion 124; the connecting portion 124 can be located at the center of the annular outer frame 122, or near the center of the circle, or offset from the center of the circle. For example, multiple support ribs 123 can divide the annular outer frame 122 equally, and the angles between two adjacent support ribs 123 can be equal, such as three support ribs 123 divide the outer frame equally, and the angle between each two support ribs 123 is 120 degrees. The nozzle 113 can be set in the exposed area between the two support ribs 123, or in the edge area of ​​the annular outer frame 122, or through the mounting hole of the annular outer frame 122 corresponding to the nozzle 113. The nozzle 113 is embedded in the side of the carrier plate 111 facing the wafer 200 and is exposed.

[0043] The support ribs 123 and the annular outer frame 122 can be an integrally formed structure. The interior of the support ribs 123 can be a hollow structure to provide a hollow channel 1233 that communicates with the bump 114 for liquid supply. The interior of the connecting portion 124 can be a hollow cavity that communicates with the hollow channel 1233 inside the support ribs 123. The connecting portion 124 is connected to the liquid supply pipeline of the machine. The cleaning liquid provided by the liquid supply pipeline can pass through the connecting portion 124 and the hollow channel 1233 inside the support ribs 123 to reach the bump 114, allowing the water pressure sensor to detect whether the wafer 200 is on the bump 114. The interior of the annular outer frame 122 can include an annular hollow channel that communicates with the bump 114 and the hollow channel 1233 inside the support ribs 123.

[0044] In some embodiments, the cleaning liquid sprayed by the nozzle 113 may remain on the support rib 123, and the cleaning liquid flowing out of the outlet of the protrusion 114 may also flow along the extension direction of the support rib 123 and remain on the support rib 123. Figure 5The cross-sectional schematic diagram of the support rib 123 in the xoz plane is shown as an example. The bump 114 protrudes upward to a certain height relative to the support rib 123. When the wafer 200 is carried on the bump 114, the wafer 200 is at a certain distance from the top surface of the support rib 123 without direct contact, such as 5 mm. The support rib 123 may include a first part 1232 and a second part 1234. The first part 1232 has a hollow pipe 1233, and the upper surface of the top of the support rib 123 is a planar structure. The part of the support rib 123 with the hollow pipe 1233 is embedded in the second part 1234, and the second part 1234 is fixedly connected to the first part 1232. The first part 1232 is used for liquid supply and facing the wafer 200. The second part 1234 is used to support and protect the first part 1232, and provide an installation position for fixed installation with structures such as the carrier plate 111. The first portion 1232 of the support rib 123 may be made of a polymer material such as plastic, such as polytetrafluoroethylene, polypropylene, etc., and the second portion 1234 may be made of a metal material, such as aluminum or aluminum alloy.

[0045] In some embodiments, as Figure 6 In the example shown, the top of the support rib 123 can be a plane, and a bump 114 can be provided at the contact point between one end of the support rib 123 and the annular outer frame 122; the plane on the top of the support rib 123 is prone to accumulation and residual cleaning liquid, and when the wafer 200 is placed on the bump 114, it can react with the residual cleaning liquid to form Figure 7 The defect distribution shown in the figure corresponds to the location of the support ribs 123. If water remains on the top surface of the support ribs 123, the silicon or silicon oxide on the surface of the wafer 200 may react with water to produce a hydration reaction. Figure 7 The defect distribution shown reduces CMP yield.

[0046] In view of this, the embodiment of the present disclosure provides a cleaning device 110, which sets the top surface of the support rib 123 to a sharp-angled ridge structure to reduce the residue of the cleaning liquid and reduce the defects of the wafer 200. According to some aspects of the embodiment of the present disclosure, Figure 8 A cleaning device 110 is provided, comprising:

[0047] A carrier plate 111; a bracket 121, located on the carrier plate 111; the bracket 121 is used to face or carry the wafer 200; the bracket 121 includes an annular outer frame 122, and a plurality of support ribs 123; one end of the support rib 123 is fixedly connected to the annular outer frame 122, and the plurality of support ribs 123 are spaced apart on the inner side of the annular outer frame 122 along the circumferential direction of the annular outer frame 122; the support rib 123 has a ridge 1231 facing the wafer 200 on the side away from the carrier plate 111, and the ridge 1231 is provided with two side walls, and the two side walls intersect at the end away from the carrier plate 111 to form a support portion for supporting or facing the wafer 200; a nozzle 113, provided on the carrier plate 111, and the nozzle 113 is configured to spray cleaning liquid toward the wafer 200.

[0048] The ridge 1231 may be composed of two side walls; the two side walls form an angle, and the tip of the angle faces the wafer 200; the tip of the sharp angle may serve as a support portion for supporting or facing the wafer 200. The support portion of the ridge 1231 may be in contact with the wafer 200 for supporting the wafer 200. The support portion is in the shape of a sharp angle, which may reduce the accumulation of the cleaning liquid and the contact area with the wafer 200, such as achieving line contact between the support portion and the wafer 200, thereby reducing defects on the surface of the wafer 200. Alternatively, the bracket 121 may be provided with other support components that contact with the wafer 200 to support the wafer 200, and the support components protrude relative to the ridge 1231 toward the wafer 200, and the support portion of the ridge 1231 faces the wafer and does not contact the wafer 200; such as the support components may be as Figure 8 The bump 114 shown in the example may be a part of the bracket 121 or not. The bump 114 protrudes toward the wafer 200 relative to the ridge 1231. There is a certain distance between the wafer 200 and the ridge 1231 without direct contact, which reduces the residual cleaning liquid on the ridge 1231 from forming defects on the wafer 200.

[0049] The nozzle 113 may be embedded in the carrier plate 111 and exposed on a surface of the carrier plate 111 near the wafer 200 . The nozzle 113 is configured to spray a cleaning solution. The nozzle 113 may include a first nozzle 1131 , a second nozzle 1132 , and a third nozzle 1133 .

[0050] Figure 9 A schematic cross-sectional view of a support rib 123 taken along the xoz plane is shown. One end of the support rib 123 is fixedly connected to the annular outer frame 122, and the other end is fixedly connected to the connection portion 124. Multiple support ribs 123 are arranged on the inner side of the annular outer frame, spaced apart along the circumference of the annular outer frame 122. The support rib 123 has a ridge 1231 extending from the outer frame toward the connection portion 124, away from the carrier plate 111. Figure 9In the figure, the support rib 123 is used to form a ridge 1231 with two side walls facing the top of the wafer 200, and the angle α formed between the two side walls. The tip of the angle can serve as a support part of the ridge 1231 facing or supporting the wafer 200; the two side walls provide an inclined slope, so that the cleaning liquid flows downward from the support rib 123, reducing the residue of the cleaning liquid and reducing defects in the wafer 200. Figure 10 A schematic diagram of the bracket 121 in the xoy plane is shown, which may include three support ribs 123, each with a ridge 1231 on the top. A protrusion 114 may be provided at the connection between one end of the support rib 123 and the annular outer frame 122, a water pressure sensor is provided inside the protrusion 114, and the protrusion 114 is connected to a hollow pipe 1233 inside the support rib 123. Figure 11 A schematic diagram of the three-dimensional structure of an exemplary support rib 123 is shown.

[0051] In some embodiments, reference Figure 9 As shown, the cross-sectional shape of the ridge 1231 in the plane intersecting with the surface of the carrier plate 111 includes a triangle, and the angle α of the triangle toward the wafer 200 is greater than 90 degrees. Figure 8 The surface of the carrier plate 111 in the embodiment may extend in the xoy plane, or the surface of the carrier plate 111 may be parallel to the xoy plane. Figure 9 The cross-sectional diagram of the support rib 123 shown in the figure is a cross-sectional diagram on the xoz plane perpendicular to the xoy plane. In some other embodiments, the cross-section of the ridge 1231 on a plane having a certain angle with the xoz plane may include a triangle. The triangle mentioned in this embodiment is a part of the cross-sectional figure of the support rib 123. The two sides of the triangle include two side walls of the support rib 123 facing the wafer 200 and located at the top. The two side walls are inclined and have an angle α. The cross-sectional figure of the support rib 123 does not only include triangles, such as a combination of a triangle and a rectangle, and the rectangle is connected to the bottom side of the triangle and has no physical boundary. In some embodiments, the two side walls are inclined and have a certain angle, which can reduce the height of the ridge 1231 of the support rib 123, and when the wafer 200 is placed on the protrusion 114 of the cleaning device 110 or the bracket 121, the surface distance of the wafer 200 toward the support rib 123 is increased, such as 8 mm.

[0052] In some embodiments, the bracket 121 further comprises: a connecting portion 124 located on the inner side of the annular outer frame 122, and an end of the support rib 123 away from the annular outer frame 122 is fixedly connected to the connecting portion 124; the height of the annular outer frame 122 protruding from the surface of the carrier plate 111 is greater than the height of the connecting portion 124 protruding from the surface of the carrier plate 111; the height of the support rib 123 protruding from the carrier plate 111 gradually decreases in the direction from the annular outer frame 122 to the connecting portion 124. The support rib 123 is arranged according to a certain slope, with the end of the support rib 123 connected to the annular outer frame 122 having a higher height than the surface of the carrier plate 111, and the end of the support rib 123 connected to the connecting portion 124 having a lower height than the surface of the carrier plate 111. The protrusion height of the annular outer frame 122 relative to the surface of the carrier plate 111 is greater than the height of the connecting portion 124 protruding from the surface of the carrier plate 111. The support ribs 123 are not parallel to the surface of the carrier plate 111. There is a certain angle between the support ribs 123 and the surface of the carrier plate 111 so that the cleaning liquid flowing toward the support ribs 123 can flow down from the support ribs 123, reducing the cleaning liquid residue on the support ribs 123.

[0053] In some embodiments, the extension direction of the support rib 123 away from the annular outer frame 122 has an angle with the surface of the carrier plate 111; or, the extension direction of the support rib 123 from the annular outer frame 122 toward the connecting portion 124 has an angle with the surface of the carrier plate 111, and the angle is greater than 0 degrees and less than 90 degrees, for example, 0 to 10 degrees.

[0054] In some embodiments, reference Figure 8 and Figure 10 As shown, the end of the support rib 123 away from the annular outer frame 122 is fixedly connected to the connecting portion 124, and the cleaning device 110 also includes: a hollow protrusion 114, located at the end of the support rib 123 away from the connecting portion 124, and the protrusion 114 is used to support the wafer 200; the protrusion 114 protrudes away from the supporting plate 111 relative to the annular outer frame 122, and the end of the protrusion 114 away from the annular outer frame 122 has a water outlet; a water pressure sensor is arranged inside the protrusion 114; the water pressure sensor is configured to: detect the water outlet pressure of the protrusion 114.

[0055] In some embodiments, reference Figure 9 As shown, the support rib 123 includes a hollow pipe 1233, which is connected to the protrusion 114. In some embodiments, the connecting portion 124 is a hollow cavity, which is connected to the hollow pipe 1233 inside the support rib 123; the connecting portion 124 is connected to the liquid supply pipe.

[0056] Reference Figure 8 As shown, the protrusion 114 can be arranged on a side of the annular outer frame 122 away from the connecting portion 124, that is, arranged on the outside of the annular outer frame 122; Figure 10 As shown, the bump 114 can be disposed on the annular outer frame 122; the bump 114 is a hollow cavity with a water outlet. The water outlet can be located on the top of the bump 114 facing the wafer 200, on the sidewall of the bump 114, or at the contact point between the bump 114 and the outer frame. A water pressure sensor is disposed within the bump 114. The water pressure sensor is configured to detect the water pressure at the water outlet of the bump 114. By detecting the change in water pressure at the water pressure sensor, it can be detected whether the wafer 200 is supported on the bump 114. For example, when the wafer 200 contacts the bump 114, the water outlet covering the top of the bump 114 will increase the water pressure at the water outlet, which can detect that the wafer 200 has reached the supporting position. If the pressure at the water pressure sensor does not increase, it can indicate that the wafer 200 has not reached the supporting position. Alternatively, the pressure difference between multiple water pressure sensors can be compared to detect whether the wafer 200 is placed horizontally.

[0057] The interior of the support ribs 123 may be hollow, providing a hollow conduit 1233 that connects to the bump 114 for liquid supply. The interior of the connecting portion 124 may be a hollow cavity that connects to the hollow conduit 1233 within the support ribs 123. The connecting portion 124 is also connected to the liquid supply conduit of the machine. Cleaning liquid provided by the liquid supply conduit can pass through the connecting portion 124 and the hollow conduit 1233 within the support ribs 123 to reach the bump 114, allowing the water pressure sensor to detect whether the wafer 200 is on the bump 114. The interior of the annular outer frame 122 may include an annular hollow conduit that connects to the bump 114 and the hollow conduit 1233 within the support ribs 123. Portions of the annular outer frame 122, portions of the support ribs 123, and portions of the connecting block may be integrally formed. The connecting portion 124 may be provided with a mounting hole for mounting the bracket 121 on the carrier plate 111. The support rib 123 has a ridge 1231 facing the top of the wafer 200 to reduce liquid residue on the top of the support rib 123. The support rib 123 is arranged in a slope from the annular outer frame 122 toward the connecting portion 124. The closer the support rib 123 is to the connecting portion 124, the lower the height is, so that the liquid flowing out of the water outlet of the bump 114 or the liquid from other sources will be separated from the support rib 123, reducing liquid residue on the support rib 123 and reducing defects caused by liquid accumulation on the surface of the wafer 200.

[0058] In some embodiments, reference Figure 9 and Figure 11As shown, the support rib 123 includes: a first part 1232 and a second part 1234 fixedly connected, the first part 1232 is located on the side of the second part 1234 away from the carrier plate 111; the first part 1232 includes a ridge 1231 facing the wafer 200 and a hollow pipe 1233, the hollow pipe 1233 is embedded in the second part 1234, and the ridge 1231 is located on the side of the hollow pipe 1233 away from the carrier plate 111. The first portion 1232 is positioned above the second portion 1234. The first portion 1232 has a hollow channel 1233 and a ridge 1231 located above the hollow channel 1233. The portion of the ridge 1231 facing the wafer 200 serves as a support portion (or, a sharp corner) to reduce liquid residue. The hollow channel 1233 of the first portion 1232 is partially embedded within the second portion 1234. The first portion 1232 is used to supply liquid and face the wafer 200. The second portion 1234 supports and protects the first portion 1232, and provides a mounting location for secure installation with structures such as the carrier plate 111. The first portion 1232 of the support rib 123 can be made of a polymer material such as plastic, such as polytetrafluoroethylene or polypropylene, while the second portion 1234 can be made of a metal material such as aluminum or an aluminum alloy.

[0059] In some embodiments, the cleaning device 110 is configured to align with the polishing head 103 in a direction perpendicular to the surface of the carrier plate 111 and clean the polishing head 103. The polishing head 103 is provided with a diaphragm 1031 and a retaining ring 1032 located at the edge of the diaphragm 1031 and surrounding the diaphragm 1031, with a gap 1033 between the diaphragm 1031 and the retaining ring 1032. The nozzle 113 is embedded in the carrier plate 111 and exposed on the side of the carrier plate 111 close to the wafer 200. The nozzle 113 includes: Figure 4 and Figure 8 The first nozzle 1131 shown corresponds to the retaining ring 1032; the second nozzle 1132 corresponds to the gap 1033; and the third nozzle 1133 corresponds to the diaphragm 1031. The second nozzle 1132 is configured to spray columnar cleaning liquid and adjust the spray angle. Figure 2 As shown, there is a flexible buffer membrane 1031 and a retaining ring 1032 surrounding the edge of the membrane 1031; the retaining ring 1032 can protrude toward the polishing table 101, and the retaining ring 1032 and the membrane 1031 form a chamber to secure and accommodate the wafer 200. The gap 1033 between the retaining ring 1032 and the membrane 1031 is prone to retaining foreign matter such as polishing liquid crystals and polishing byproducts. If not cleaned properly, it can easily cause the polishing head 103 to fail in adhering to the wafer 200, causing the wafer 200 to fall and thus cause the wafer 200 to break.

[0060] Reference Figure 12, a schematic diagram of cleaning is shown when the grinding head 103 and the grinding head 103 cleaning device 110 are aligned in the z direction or aligned within a certain error range. The first nozzle 1131 is aligned with the retaining ring 1032 in the z direction, or is basically aligned with the retaining ring 1032 within a certain error range, the second nozzle 1132 is aligned with the gap 1033 in the z direction, and the third nozzle 1133 is aligned with the diaphragm 1031. Specifically, multiple third nozzles 1133 can be set to align with the edge area and the middle area of ​​the diaphragm 1031 from the outside to the inside. The second nozzle 1132 sprays high-pressure, columnar cleaning liquid, spraying it at a high pressure concentrated on the gap 1033 to rinse the residue on the gap 1033. During the cleaning process, the grinding head 103 can be rotated so that various areas of the grinding head 103 can be cleaned by the cleaning liquid. When the grinding head 103 that adsorbs the wafer 200 is cleaned, the second nozzle 1132 can clean the gap 1033 and the edge of the wafer 200, and the third nozzle 1133 can clean the middle of the wafer 200; when the wafer 200 is placed on the bracket 121 of the cleaning device 110, the second nozzle 1132 can clean the edge of the wafer 200, and the third nozzle 1133 can clean the middle of the wafer 200.

[0061] Reference Figure 13 The second nozzle 1132 can be adjusted in its spray angle, for example, by tilting along the z-direction or other directions to form an angle with the z-direction, such as -90 to 90 degrees, to change the spray angle of the second nozzle 1132 so that the sprayed cleaning liquid is directed toward the gap 1033. Exemplarily, the second nozzle 1132 can include a nozzle with an electrically or pneumatically adjustable spray angle, or a nozzle with a manually adjustable spray angle; the first nozzle 1131 and the third nozzle 1133 can also include nozzles 113 with adjustable spray angles.

[0062] The first nozzle 1131, the second nozzle 1132, and the third nozzle 1133 can be arranged on a concentrically arranged liquid supply pipeline. All nozzles 113 can be supplied with liquid in a unified manner, or the first nozzle 1131, the second nozzle 1132, and the third nozzle 1133 can be supplied with liquid independently to provide different water pressures. Regarding the arrangement of the first nozzle 1131, multiple first nozzles 1131 can be arranged in a circular manner, and the multiple first nozzles 1131 are connected to the first pipeline for liquid supply; multiple second nozzles 1132 can be arranged in a circular manner, and the multiple second nozzles 1132 are connected to the second pipeline for liquid supply; and multiple third nozzles 1133 can be arranged in a circular manner and connected to the third pipeline or the first pipeline. Because the area of ​​the diaphragm 1031 is large, multiple circles of third nozzles 1133 can be set, or they can be arranged in multiple areas to ensure that the cleaning liquid evenly covers the diaphragm 1031. The second pipeline is a high-pressure liquid supply pipeline, for example, with a water pressure of 30-35 psi, and the first pipeline and / or the third pipeline are low-pressure liquid supply pipelines, for example, with a water pressure of 0-30 psi. In some embodiments, the first nozzle 1131, the second nozzle 1132, and the third nozzle 1133 can be embedded in the carrier plate 111. The liquid spray port of the nozzle 113 faces the polishing head 103 and is exposed from the carrier plate 111. The nozzle 113 may or may not protrude from the surface of the carrier plate 111. A portion of the liquid supply pipeline of the nozzle 113 is disposed in the carrier plate 111.

[0063] According to some aspects of the embodiments of the present disclosure, there is provided a polishing machine 100, comprising: Figure 8 The cleaning device 110 shown; the polishing machine 100 also includes: Figure 1 The grinding table 101 shown in the example is used to carry the polishing pad 102; the grinding head 103; the grinding head 103 is used to absorb the wafer 200 and apply pressure to the wafer 200 so that the wafer 200 is close to the polishing pad 102, and the grinding head 103 drives the wafer 200 to rotate on the polishing pad 102; the dressing assembly 104 includes a dressing arm and a dressing head; the dressing arm drives the dressing head to be close to the polishing pad 102 and swing horizontally on the polishing pad 102, and the dressing head rotates; the liquid supply assembly 105 is used to provide grinding liquid to the surface of the polishing pad 102.

[0064] The cleaning device 110 provided in the embodiment of the present disclosure can be used as a partial component of the polishing machine 100 or an independent cleaning device. The cleaning device 110 can be used to clean the grinding head 103 or clean the wafer 200. The wafer 200 is carried on the bracket 121 of the cleaning device 110, and can be specifically placed on the protrusion 114 of the bracket 121. The support rib 123 of the bracket 121 has a ridge 1231 facing the top of the wafer 200 to reduce liquid residue on the top of the support rib 123. The support rib 123 is arranged in a slope from the annular outer frame 122 toward the connecting portion 124. The closer the support rib 123 is to the connecting portion 124, the lower the height of the support rib 123 is, so that the liquid flowing out of the water outlet of the protrusion 114 or the liquid from other sources is separated from the support rib 123, thereby reducing the liquid residue on the support rib 123 and reducing defects caused by liquid accumulation on the surface of the wafer 200.

[0065] The cleaning device 110 provides a first nozzle 1131 corresponding to the retaining ring 1032, a second nozzle 1132 corresponding to the gap 1033, and a third nozzle 1133 corresponding to the diaphragm 1031, so as to achieve fine cleaning of different areas of the grinding head 103; the second nozzle 1132 can spray high-pressure, columnar cleaning liquid, and adjust the spray angle, so as to achieve focused cleaning of grinding liquid crystals, grinding by-products and other residues in the gap 1033, reduce the residual impurities inside the grinding head 103, improve the adsorption force of the grinding head 103 on the wafer 200, and reduce the risk of the wafer 200 slipping and fragmentation.

[0066] The above description is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of changes or replacements within the technical scope disclosed in the present disclosure, and they should all be covered by the protection scope of the present disclosure.

Claims

1. A cleaning device, characterized in that: include: Carrying tray; A bracket is located on the carrier plate; the bracket is used to carry the wafer; the bracket includes an annular outer frame and a plurality of supporting ribs; One end of the support rib is fixedly connected to the annular outer frame, and a plurality of the support ribs are spaced apart on the inner side of the annular outer frame along the circumferential direction of the annular outer frame; The supporting rib has a ridge facing the wafer on a side away from the carrier plate, and the ridge is provided with two side walls, and the two side walls intersect at an end away from the carrier plate to form a supporting portion for supporting or facing the wafer; A nozzle is provided on the carrier plate, and the nozzle is configured to spray a cleaning liquid toward the wafer.

2. The cleaning device according to claim 1, characterized in that The cross-sectional shape of the ridge in a plane intersecting the surface of the carrier plate includes: a triangle, and an angle of the triangle toward the wafer is greater than 90 degrees.

3. The cleaning device according to claim 1, characterized in that The bracket further comprises: The connecting portion is fixedly connected to the connecting portion at one end of the supporting rib away from the annular outer frame; the height of the annular outer frame protruding from the surface of the carrier disk is greater than the height of the connecting portion protruding from the surface of the carrier disk; the height of the supporting rib protruding from the carrier disk gradually decreases in the direction from the annular outer frame toward the connecting portion.

4. The cleaning device according to claim 1, characterized in that An extension direction of the support rib extending away from the annular outer frame forms an angle with the surface of the carrier plate, and the angle is greater than 0 degrees and less than 90 degrees.

5. The cleaning device according to claim 1, characterized in that One end of the support rib away from the annular outer frame is fixedly connected to the connecting portion, and the cleaning device further comprises: a hollow protrusion located at one end of the support rib away from the connecting portion, the protrusion being used to support the wafer; the protrusion protruding away from the supporting plate relative to the annular outer frame, the end of the protrusion away from the annular outer frame having a water outlet; The water pressure sensor is arranged inside the convex block; the water pressure sensor is configured to detect the water pressure of the convex block.

6. The cleaning device according to claim 5, characterized in that: The supporting rib includes a hollow pipe, and the hollow pipe is communicated with the protrusion.

7. The cleaning device according to claim 6, characterized in that The supporting ribs include: A first part and a second part are fixedly connected, wherein the first part is located on a side of the second part away from the supporting plate; the first part includes the ridge and the hollow pipe, the hollow pipe is embedded in the second part, and the ridge is located on a side of the hollow pipe away from the supporting plate.

8. The cleaning device according to claim 6, characterized in that The connecting portion is a hollow cavity, and the connecting portion is communicated with the hollow pipe inside the supporting rib; the connecting portion is communicated with the liquid supply pipe.

9. The cleaning device according to claim 1, characterized in that: The cleaning device is configured to align with the polishing head in a direction perpendicular to the surface of the carrier plate and clean the polishing head, the polishing head being provided with a diaphragm and a retaining ring located at the edge of the diaphragm and surrounding the diaphragm, with a gap between the diaphragm and the retaining ring; the nozzle is embedded in the carrier plate, the nozzle is exposed on a side surface of the carrier plate close to the wafer, and the nozzle includes: a first nozzle corresponding to the buckle; a second nozzle, corresponding to the gap; a third nozzle, corresponding to the diaphragm; Wherein, the second nozzle is configured to: spray columnar cleaning liquid and adjust the spray angle.

10. A polishing machine, characterized in that: include: The cleaning device according to any one of claims 1 to 9; The polishing machine also includes: A grinding table for carrying a polishing pad; A grinding head; the grinding head is used to absorb the wafer and apply pressure to the wafer so that the wafer is close to the polishing pad, and the grinding head drives the wafer to rotate on the polishing pad; A dressing assembly includes a dressing arm and a dressing head; the dressing arm drives the dressing head to be close to the polishing pad and swing horizontally on the polishing pad, and the dressing head rotates; The liquid supply component is used to provide abrasive liquid to the surface of the polishing pad.

Images