Cavity structure for uniform film deposition of CVD (Chemical Vapor Deposition) equipment

Abstract

The utility model discloses a chamber structure for uniform film deposition of CVD (chemical vapor deposition) equipment, which is characterized in that a gas inlet pipe is arranged on one side of a reaction chamber at the same horizontal height as a graphite disc, an exhaust device is arranged on the other side of the reaction chamber at the same horizontal height as the graphite disc, and the gas inlet pipe, a substrate on the graphite disc and the exhaust device are positioned on the same horizontal plane; reaction gas enters the reaction cavity through the gas inlet pipe and is transversely blown to the wafer substrate at the top of the graphite disc to complete thin film deposition, gas flow is parallel to the surface of the substrate for deposition, the problem that the deposition thickness is not uniform due to the deposition mode perpendicular to the surface of the substrate is solved, and the uniformity of the thin film deposition thickness is improved; the pressing gas enters the pressing gas cavity through the pressing gas pipe and then is vertically discharged into the reaction cavity through the gas hole plate, the pressing gas is preferably nitrogen, and the pressing gas downwards presses the horizontally flowing reaction gas, so that a larger amount of reaction gas is deposited on the surface of the substrate, and the deposition speed is increased.

Description

Technical Field

[0001] The utility model relates to the technical field of chemical vapor deposition, in particular to a chamber structure for uniform thin film deposition of CVD equipment. Background Art

[0002] In semiconductor manufacturing, to produce discrete devices and integrated circuits, it is necessary to deposit various thin films on the wafer substrate. Among the methods for depositing thin films, chemical vapor deposition (CVD) is a commonly used method. CVD methods include low-pressure CVD, high-pressure CVD, plasma-enhanced CVD, and other CVD methods used in various semiconductor manufacturing processes.

[0003] CVD equipment is a device that can produce nano-scale thin films under high temperature and high vacuum. As one of the most important components of CVD equipment, the chamber structure determines the film quality and growth rate of the CVD equipment. The direction of fluid inlet and exhaust, heating temperature uniformity and other aspects need to be considered in the chamber.

[0004] In related technologies, a wafer substrate is placed in a chamber. Reactive gases are typically blown vertically onto the substrate surface, then flow outward along the substrate surface before being exhausted from the chamber by a vacuum pump. Thin films are deposited on the substrate surface under the action of the reactive gases. However, due to poor gas flow at the center of the substrate, the film thickness at the center is greater than that at the periphery of the substrate, resulting in uneven film thickness across the substrate surface. Utility Model Content

[0005] In response to the problems in the related art, the present application discloses a chamber structure for uniform thin film deposition in a CVD device, which solves the problem of uneven film deposition thickness caused by vertical blowing of reaction gas toward the substrate in the related art.

[0006] To achieve the above objectives, this application provides the following technical solutions:

[0007] A chamber structure for uniform thin film deposition in a CVD device comprises a chamber body and a chamber cover structure, wherein the chamber body and the chamber cover structure are openably and closably connected, the chamber body comprising a heating chamber and a reaction chamber, the heating chamber and the reaction chamber being heat-conductively insulated, a heater being provided inside the heating chamber for heating the reaction chamber, a graphite disk for placing a wafer substrate being provided inside the reaction chamber, a first air intake pipe and a second air intake pipe being provided on one side of the reaction chamber at the same level as the graphite disk, and an exhaust device being provided on the other side of the reaction chamber at the same level as the graphite disk, reaction gas entering the reaction chamber through the first air intake pipe and the second air intake pipe and being blown laterally toward the wafer substrate on top of the graphite disk to complete thin film deposition, and the reaction gas being discharged from the reaction chamber through the exhaust device.

[0008] As a further solution of the present application: the first air intake pipe and the second air intake pipe are connected at the air inlet to form an air intake cavity, and the air intake cavity is provided with a plurality of evenly arranged air intake holes on the exhaust side. The reaction gas enters the air intake cavity through the first air intake pipe and the second air intake pipe respectively and is evenly discharged into the reaction chamber through the air intake holes.

[0009] As a further solution of the present application: the air intake cavities respectively connected to the first air intake pipe and the second air intake pipe are arranged in parallel up and down.

[0010] As a further solution of the present application: the exhaust device includes a gas collecting chamber, a plurality of gas collecting holes are evenly arranged on one side of the gas collecting chamber, a vacuum tube is connected to the other side of the gas collecting chamber, and the vacuum tube is connected to the vacuum pump, and the vacuum pump completes the extraction of reaction gas through the gas collecting holes, the gas collecting chamber and the vacuum tube.

[0011] As a further solution of the present application: a compressed air cavity is provided inside the cavity cover structure, the outside of the compressed air cavity is connected to the compressed gas through a compressed air pipe, an air hole plate is provided inside the compressed air cavity, and a plurality of air holes are evenly provided on the air hole plate. The compressed gas enters the compressed air cavity through the compressed air pipe and is then vertically discharged into the reaction chamber through the air hole plate. The compressed gas presses the horizontally flowing reaction gas downward.

[0012] As a further solution of the present application: the graphite disk is arranged at the bottom of the reaction chamber, and the heating chamber is provided below the outside of the reaction chamber.

[0013] As a further solution of the present application: insulating panels are provided around the outside of the heater, and the insulating panels can prevent the reaction gas from contaminating the inside of the heating chamber.

[0014] As a further solution of the present application: a reflective plate is provided at the lower portion of the heater, and the reflective plate can reflect heat to the desired heating position.

[0015] As a further solution of the present application: a temperature sensor is provided at the bottom of the graphite disk, and the temperature sensor can monitor the temperature of the bottom of the graphite disk.

[0016] In summary, the beneficial effects of this application are:

[0017] 1. An air inlet pipe is provided on one side of the reaction chamber at the same level as the graphite disk, and an exhaust device is provided on the other side of the reaction chamber at the same level as the graphite disk. The air inlet pipe, the substrate on the graphite disk and the exhaust device are approximately at the same horizontal plane, so that the reaction gas enters the reaction chamber from the air inlet pipe and blows horizontally toward the wafer substrate on the top of the graphite disk to complete the thin film deposition. The gas flow is parallel to the substrate surface for deposition, which solves the problem of uneven deposition thickness caused by deposition perpendicular to the substrate surface and improves the uniformity of film deposition thickness.

[0018] 2. The compression gas enters the compression gas cavity through the compression gas pipe and is then vertically discharged into the reaction chamber through the air hole plate. Nitrogen is the preferred compression gas. The compression gas presses the horizontally flowing reaction gas downward, so that a larger amount of reaction gas is deposited on the substrate surface, thereby increasing the deposition rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The accompanying drawings are used to provide further understanding of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the present application and do not constitute a limitation of the present application.

[0020] In the attached figure:

[0021] Figure 1 This is a schematic diagram of the FF direction cross-sectional structure of this application.

[0022] Figure 2 This is a schematic diagram of the top view of the structure of this application.

[0023] Notes on reference numerals:

[0024] 1. Chamber body; 2. Chamber cover structure; 3. Reaction chamber; 4. Heating chamber; 21. Suppressed air pipe; 22. Suppressed air chamber; 23. Air hole plate; 31. First air inlet pipe; 32. Second air inlet pipe; 33. Air inlet chamber; 34. Graphite disk; 35. Gas collecting chamber; 36. Vacuum tube; 41. Heater; 42. Isolation panel; 43. Reflector; 44. Temperature sensor; DETAILED DESCRIPTION

[0025] Exemplary embodiments will be described in detail herein, with examples illustrated in the accompanying drawings. In the following description, when referring to the drawings, identical numerals in different figures represent identical or similar elements, unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all embodiments consistent with the present application. Rather, they are merely examples of apparatuses and methods consistent with certain aspects of the present disclosure, as detailed in the appended claims.

[0026] It should be noted that all directional indications in the embodiments (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the various components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0027] In addition, the descriptions of "first" and "second" in the embodiments are only for descriptive purposes and do not specifically refer to the order or ranking, nor are they used to limit the present application. They are only used to distinguish components or operations described with the same technical terms, and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in this field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0028] In order to further understand the content, features and effects of the present application, the following embodiments are given as examples and described in detail with reference to the accompanying drawings:

[0029] like Figure 1-2 As shown:

[0030] The chamber structure of the CVD equipment for uniform thin film deposition includes a chamber body 1 and a chamber cover structure 2.

[0031] The chamber body 1 and the chamber cover structure 2 are connected in an openable and closable manner. The chamber cover structure 2 can be opened to facilitate taking and placing the substrate.

[0032] The chamber body 1 includes a heating chamber 4 and a reaction chamber 3 . The heating chamber 4 and the reaction chamber 3 can be thermally isolated. A heater 41 is provided inside the heating chamber 4 to heat the reaction chamber 3 .

[0033] Among them, a graphite disk 34 for placing a wafer substrate is provided at the bottom of the reaction chamber 3. An air inlet pipe 31 and an air inlet pipe 32 are provided on one side of the reaction chamber 3 at the same level as the graphite disk 34. An exhaust device is provided on the other side of the reaction chamber 3 at the same level as the graphite disk 34. The reaction gas enters the reaction chamber 3 through the air inlet pipe 31 and the air inlet pipe 32 and is blown horizontally toward the wafer substrate on the top of the graphite disk 34 to complete the thin film deposition. The reaction gas is discharged from the reaction chamber 3 through the exhaust device.

[0034] An air inlet pipe is provided on one side of the reaction chamber 3 at the same level as the graphite disk 34, and an exhaust device is provided on the other side of the reaction chamber 3 at the same level as the graphite disk 34. The air inlet pipe, the substrate on the graphite disk 34 and the exhaust device are approximately at the same horizontal plane, so that the reaction gas enters the reaction chamber 3 from the air inlet pipe and is blown horizontally toward the wafer substrate on the top of the graphite disk 34 to complete the thin film deposition. The gas flow is parallel to the substrate surface for deposition, which solves the problem of uneven deposition thickness caused by the deposition method perpendicular to the substrate surface and improves the uniformity of the thin film deposition thickness.

[0035] The first and second air inlet tubes 31, 32 are connected at the air inlet port to form an air inlet cavity 33. The air inlet cavity 33 has multiple evenly spaced air inlet holes on the exhaust side. The reactant gas enters the air inlet cavity 33 through the first and second air inlet tubes 31, 32, respectively, and is evenly discharged into the reaction chamber 3 through the air inlet holes. The air inlet cavities 33, which are connected to the first and second air inlet tubes 31, 32, are arranged parallel to each other.

[0036] The air inlet cavity 33 and the air inlet holes improve the mixing uniformity of the reaction gases.

[0037] The exhaust device includes a gas collecting chamber 35, and a plurality of gas collecting holes are evenly arranged on one side of the gas collecting chamber 35. A vacuum tube 36 is connected to the other side of the gas collecting chamber 35. The vacuum tube 36 is connected to the vacuum pump, and the vacuum pump completes the exhaust of the reaction gas through the gas collecting holes, the gas collecting chamber 35 and the vacuum tube 36.

[0038] The gas collecting cavity 35 and the gas collecting holes enable the vacuum pump to evenly extract the gas through the vacuum suction force.

[0039] Preferably, a pressing air cavity 22 is provided inside the cavity cover structure 2, and the outer side of the pressing air cavity 22 is connected to the pressing gas through a pressing air pipe 21. A pore plate 23 is provided on the inner side of the pressing air cavity 22, and a plurality of vents are evenly provided on the pore plate 23. The pressing gas enters the pressing air cavity 22 through the pressing air pipe 21 and is then vertically discharged into the reaction chamber 3 through the pore plate 23. The pressing gas presses the horizontally flowing reaction gas downward.

[0040] The pressing gas enters the pressing gas cavity 22 through the pressing gas pipe 21 and is then vertically discharged into the reaction cavity 3 through the air hole plate 23. Nitrogen is the preferred pressing gas. The pressing gas presses the horizontally flowing reaction gas downward, so that a larger amount of reaction gas is deposited on the substrate surface, thereby increasing the deposition rate.

[0041] The graphite disk 34 is arranged at the bottom of the reaction chamber 3. A heating chamber 4 is arranged outside the reaction chamber 3 and below. An insulating plate 42 is arranged around the outside of the heater 41. The insulating plate 42 can prevent the reaction gas from polluting the inside of the heating chamber 4.

[0042] The heater 41 is preferably a resistance wire, which is evenly distributed outward in the circumferential direction to ensure the consistency of heating density. In addition, the design of the resistance wire is also a low-maintenance cost solution.

[0043] The isolation plate 42 is preferably a quartz plate, and its main purpose is to isolate the heater 41 from the reaction gas and reduce the damage to the heater 41 caused by the gas reaction.

[0044] A reflective plate 43 is provided at the lower portion of the heater 41 , and the reflective plate 43 can reflect heat to a desired heating location.

[0045] A temperature sensor 44 is provided at the bottom of the graphite disk 34 . The temperature sensor 44 can monitor the temperature at the bottom of the graphite disk 34 , thereby facilitating accurate control of the reaction temperature.

[0046] Finally, it should be noted that the above disclosure is only a preferred embodiment of the present application and is not intended to limit the present application. Although the present application has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments or to replace some of the technical features therein with equivalents. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application. The scope of the present application is limited only by the appended claims.

Claims

1. A chamber structure for uniform thin film deposition in a CVD device, comprising a chamber body (1) and a chamber cover structure (2), wherein the chamber body (1) and the chamber cover structure (2) are connected in an openable and closable manner, and characterized in that: The chamber body (1) comprises a heating chamber (4) and a reaction chamber (3); the heating chamber (4) and the reaction chamber (3) can be arranged to be thermally insulated; a heater (41) is provided inside the heating chamber (4) to heat the reaction chamber (3); a graphite disk (34) is provided inside the reaction chamber (3) to place a wafer substrate; a first air inlet pipe (31) and a second air inlet pipe (32) are provided on one side of the reaction chamber (3) at the same level as the graphite disk (34); an exhaust device is provided on the other side of the reaction chamber (3) at the same level as the graphite disk (34); reaction gas enters the reaction chamber (3) through the first air inlet pipe (31) and the second air inlet pipe (32) and is blown laterally toward the wafer substrate on the top of the graphite disk (34) to complete thin film deposition; and the reaction gas is discharged from the reaction chamber (3) through the exhaust device.

2. The chamber structure for uniform thin film deposition of a CVD device according to claim 1, characterized in that: The first air inlet pipe (31) and the second air inlet pipe (32) are connected at the air inlet to form an air inlet cavity (33). The air inlet cavity (33) is provided with a plurality of evenly arranged air inlet holes on the exhaust side. The reaction gas enters the air inlet cavity (33) through the first air inlet pipe (31) and the second air inlet pipe (32) respectively and is evenly discharged into the reaction chamber (3) through the air inlet holes.

3. The chamber structure for uniform thin film deposition of a CVD device according to claim 2, characterized in that: The air intake chamber (33) which is in communication with the first air intake pipe (31) and the second air intake pipe (32) is arranged in parallel up and down.

4. The chamber structure for uniform thin film deposition of a CVD device according to claim 1, characterized in that: The exhaust device comprises a gas collecting chamber (35), a plurality of gas collecting holes are evenly arranged on one side of the gas collecting chamber (35), a vacuum tube (36) is connected to the other side of the gas collecting chamber (35), and the vacuum tube (36) is connected to a vacuum pump, and the vacuum pump completes the exhaust of the reaction gas through the gas collecting holes, the gas collecting chamber (35) and the vacuum tube (36).

5. The chamber structure for uniform thin film deposition of a CVD device according to claim 1, characterized in that: A pressing air cavity (22) is provided inside the cavity cover structure (2), the outside of the pressing air cavity (22) is connected to the pressing gas through a pressing air pipe (21), an air hole plate (23) is provided inside the pressing air cavity (22), and a plurality of vent holes are evenly provided on the air hole plate (23), the pressing gas enters the pressing air cavity (22) through the pressing air pipe (21) and then is vertically discharged into the reaction chamber (3) through the air hole plate (23), and the pressing gas presses the horizontally flowing reaction gas downward.

6. The chamber structure for uniform thin film deposition of a CVD device according to claim 1, characterized in that: The graphite disk (34) is arranged at the bottom of the reaction chamber (3), and the heating chamber (4) is arranged below the outside of the reaction chamber (3).

7. The chamber structure for uniform thin film deposition of a CVD device according to claim 6, characterized in that: The heater (41) is provided with an insulating enclosure (42) around its outer periphery. The insulating enclosure (42) can prevent the reaction gas from contaminating the interior of the heating chamber (4).

8. The chamber structure for uniform thin film deposition of a CVD device according to claim 7, characterized in that: A reflecting plate (43) is provided at the lower portion of the heater (41), and the reflecting plate (43) can reflect heat to a desired heating location.

9. The chamber structure for uniform thin film deposition of a CVD device according to claim 1, characterized in that: The bottom of the graphite disk (34) is connected to a temperature sensor (44), and the temperature sensor (44) can monitor the temperature of the bottom of the graphite disk (34).

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