Plasma process chamber for improving air inlet uniformity

By setting up electrode plates with air holes and insulating structures in the plasma process chamber, the problems of uneven air intake and local discharge are solved, and the uniform distribution and stable airflow of process gas in the product processing area are achieved, thereby improving the uniformity of product processing.

CN223363107UActive Publication Date: 2025-09-19KUNSHAN SUNCOLA ELECTROMECHANICAL TECH CO LTD
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Patent Information

Application Number
CN202422411943.5
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-10-08
Publication Date
2025-09-19
Estimated Expiration
2034-10-08

AI Technical Summary

Technical Problem

The gas inlet method of conventional plasma process chambers leads to uneven gas distribution, affecting product processing uniformity, and partial discharge will further aggravate this problem.

Method used

Electrode plates with pores are evenly distributed from top to bottom to form a product processing area. Process gas is evenly filled through these pores. Combined with electrode mounting plates, insulating sheaths and seals, uniform gas input is ensured.

Benefits of technology

It achieves uniform distribution of process gas in the product processing area, improves the uniformity of product processing, reduces local discharge, and stabilizes the plasma gas flow.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model relates to a plasma process chamber capable of improving air inlet uniformity, which comprises a process chamber main body, a plurality of electrode plates with air holes are arranged in the process chamber main body, the plurality of electrode plates with air holes are distributed from top to bottom, and an interlayer between adjacent electrode plates with air holes forms a product processing area; a plurality of air holes are formed in one side, facing the product treatment area, of the electrode plate and are uniformly distributed; and process gas uniformly fills the product processing area through the gas holes of the electrode plate with the gas holes, so that the plasma process chamber structure for improving the gas inlet uniformity is formed.
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Description

Technical Field

[0001] The utility model relates to a plasma vacuum processing technology and equipment for use thereof, and in particular to a plasma process chamber for improving air intake uniformity. Background Art

[0002] Conventional single-layer or multi-layer plasma process chambers usually have the following gas inlet methods:

[0003] Arrange an air pipe at the front door of the chamber, and punch holes in the air pipe to allow process gas to enter the plasma chamber;

[0004] Or arrange an air pipe at the front end of the cavity and make a hole in the air pipe to connect the process chamber to the cavity;

[0005] Both air intake methods involve opening holes in the corresponding processing space to ensure that process gas can enter each layer. This structure usually uses the method of front air intake and rear exhaust to achieve gas circulation. However, in actual applications, the gas concentration at the air intake end and the vacuum pipeline is usually high, which can easily lead to uneven plasma distribution, thus affecting the uniformity of product processing.

[0006] To achieve gas uniformity, gas pipes are usually arranged around the electrodes in the chamber. Although this method can further improve gas uniformity and thus plasma uniformity, in actual applications, local discharges often occur between the gas pipes themselves and the gas vents and the electrodes. Local discharges can cause strong discharges in some areas of the chamber, which can also affect the uniformity of product processing.

[0007] Therefore, it is necessary to provide a plasma process chamber with improved gas intake uniformity to solve the above problems. Utility Model Content

[0008] The utility model aims to provide a plasma process chamber with improved air intake uniformity.

[0009] The utility model achieves the above-mentioned purpose through the following technical solutions:

[0010] A plasma process chamber for improving gas intake uniformity includes a process chamber body, wherein a plurality of electrode plates with air holes are arranged in the process chamber body, wherein the plurality of electrode plates with air holes are distributed from top to bottom, and the interlayer between adjacent electrode plates with air holes forms a product processing area;

[0011] The electrode plate with air holes has a number of air holes, which are arranged on the side of the electrode plate facing the product processing area and are evenly distributed;

[0012] The process gas passes through the pores of the electrode plate with pores and evenly fills the product processing area, forming a plasma process chamber structure that improves the uniformity of gas intake.

[0013] Furthermore, an electrode mounting plate is provided in the main body of the process chamber, and the electrode mounting plate is used to load the electrode plate with air holes.

[0014] Furthermore, an electrode insulating sheath is provided on the electrode plate with air holes.

[0015] Furthermore, an electrode plate gas path cover is provided on the other side of the electrode plate with air holes.

[0016] Furthermore, the electrode plate with air holes is connected to a gas input connector, and an electrode introduction insulating seal is provided at the connection between the gas input connector and the process chamber body.

[0017] Furthermore, four vacuum ports are provided at the rear of the process chamber body.

[0018] Furthermore, the gas input connector is connected to a gas pipe joint.

[0019] Furthermore, the air pipe joint is connected to an insulating air pipe.

[0020] Compared with the prior art, the present invention improves the plasma process chamber structure with uniform air intake, and the process gas passes through the pores of the electrode plate with pores to uniformly fill the product processing area, thereby ensuring uniform product processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 This is a three-dimensional diagram of the utility model in one direction.

[0022] Figure 2 It is a three-dimensional diagram of the utility model from another direction.

[0023] Figure 3 A three-dimensional view of an electrode plate with air holes from one direction.

[0024] Figure 4 This is a three-dimensional view of the electrode plate with air holes from another direction.

[0025] Figure 5 Schematic diagram of the gas path of the electrode plate with air holes. DETAILED DESCRIPTION Example

[0026] See Figure 1-2 This embodiment shows a plasma process chamber for improving gas intake uniformity, including a process chamber body 1. A plurality of electrode plates 2 with air holes are disposed in the process chamber body 1. The plurality of electrode plates 2 with air holes are distributed from top to bottom. The interlayer between adjacent electrode plates 2 with air holes forms a product processing area 100.

[0027] The pores 20 of the electrode plate 2 with pores are multiple in number and are arranged on the side of the electrode plate facing the product processing area 100 and are evenly distributed;

[0028] The process gas passes through the pores 20 of the electrode plate 2 with pores and uniformly fills the product processing area 100, forming a plasma process chamber structure that improves the uniformity of gas intake.

[0029] An electrode mounting plate 3 is provided in the process chamber body 1 , and the electrode mounting plate 3 is used to load the electrode plate 2 with air holes.

[0030] See Figure 3-5 An electrode insulating sheath 21 is provided on the electrode plate 2 with air holes.

[0031] An electrode plate gas path cover plate 22 is provided on the other side of the electrode plate 2 with air holes.

[0032] The electrode plate 2 with air holes is connected to a gas input connector 4 , and an electrode introduction insulating seal 5 is provided at the connection between the gas input connector 4 and the process chamber body 1 .

[0033] Four vacuum ports 6 are provided at the rear of the process chamber body 1 .

[0034] The gas input connector 4 is connected to a gas pipe joint 41 , and the gas pipe joint 41 is connected to an insulating gas pipe 42 .

[0035] in:

[0036] The process chamber body 1 is a welded metal structure, with four vacuum ports 6 equipped with vacuum pipes for connecting to the vacuum pipe gas collection structure and related control components. This decentralized vacuum pumping configuration effectively reduces localized excess airflow or excessive vacuum, ensuring more stable airflow within the process chamber and ensuring plasma stability.

[0037] The electrode mounting plates 3 are fixed to the side walls on both sides of the process chamber body 1 by screws.

[0038] The electrode mounting vertical plate 3 is provided with a slot-shaped channel for placing the electrode plate insulating sheath 21 .

[0039] The electrode insulating sheath 21 is installed on both sides of the electrode plate with air holes and fixed by insulating studs.

[0040] The upper surface of the electrode plate 2 with air holes is provided with a hollow installation area for the electrode plate gas path cover. An air channel 23 is provided at the center of the hollow area. After the electrode plate gas path cover 22 is installed, the air channel 23 is sealed to form a sealed air channel structure.

[0041] The air holes 20 are connected to the air passage 23 . After the gas enters the air passage 23 , it is input into the process chamber body 1 through the air holes 20 , specifically, into the product processing area 100 formed between the two layers of electrode plates 2 with air holes.

[0042] The electrode plate 2 and the electrode plate gas path cover plate 22 can be installed by screw locking or welding, wherein the welding method includes gas shielded welding, friction welding, vacuum ion beam welding, vacuum brazing, plasma welding, etc.

[0043] A large vent is provided at the rear end of the porous electrode 2. After the porous electrode plate 2 is combined with the gas input connector 4, the process gas enters the sealed airway structure in the electrode plate 2 through the large vent.

[0044] The gas input connector 4 is mounted on the rear of the electrode plate 2 with gas holes and extends from the through-hole at the rear of the process chamber body 1 to the outside of the process chamber body 1. The process chamber connector and the electrode plate with gas holes can be assembled by screw locking or welding, where welding methods include gas shielded welding, friction welding, vacuum ion beam welding, vacuum brazing, plasma welding, etc.

[0045] When screw locking is used, a sealing gasket with through holes is installed at the airway connection between the two; when welding is used for connection, a sealing gasket with through holes is not used.

[0046] The front end of the gas input connector 4 is a flat plate structure to match the electrode plate 2 with a through hole. The rear end is cylindrical with a pore at the cylindrical end, which extends into the airway of the front flat plate structure to form a complete gas channel.

[0047] The rear end of the gas input connector 4 can be connected to a gas pipe joint, which is used to connect an insulating gas pipe.

[0048] To prevent short circuits between the electrode and the chamber and ensure the vacuum chamber is sealed, an electrode introduction insulating seal assembly is used in conjunction with the gas input connector. This assembly is made of insulating materials such as PTFE, PEEK, and ceramic. It consists of a chamber sealing portion with an insulating tube and a cylindrical sealing portion of the gas input connector. It is fixed to the rear end of the process chamber with screws.

[0049] Depending on the size of the process chamber and the electrode structure, the through-holes in the electrode plate with air holes can be arranged in one or multiple groups. When there is only one group, the air holes are opened at the front end of the electrode plate. When two groups are used, the second group of air holes is opened approximately in the middle of the electrode plate, and the number of air holes in it must be less than the number of air holes in the first group. When multiple groups are used, they are divided according to the size of the electrode plate, and the number of air holes decreases towards the end.

[0050] The size of the air hole 20 is generally within a range of φ0.5 mm to φ4 mm.

[0051] In multi-layer electrode applications, in order to ensure that the gas volume input to the Nth layer of electrodes is basically the same, a process gas collection structure will be installed externally. This structure is connected to the input gas pipe of each electrode.

[0052] In practical applications, the electrodes are installed alternately as cathodes and anodes, from top to bottom, they are the first electrode, the second electrode, the third electrode...

[0053] The first electrode is the cathode, connected to an external high-frequency power supply. The second electrode is the anode, which is grounded. The bottom electrode is the cathode. The input power of the high-frequency power supply is connected in parallel. The connecting assembly can be directly fixed to the gas input connector. A connecting locking assembly is added during connection. This component is a conductor. The anode is also connected to the ground through the gas input of the anode electrode. Multiple anode conductive connectors in the multi-layer electrode are connected and then grounded.

[0054] Compared with the prior art, the present invention improves the plasma process chamber structure with uniform air intake, and the process gas passes through the pores of the electrode plate with pores to uniformly fill the product processing area, thereby ensuring uniform product processing.

[0055] The above are only some embodiments of the present invention. For those skilled in the art, several modifications and improvements can be made without departing from the inventive concept of the present invention, and these all fall within the scope of protection of the present invention.

Claims

1. A plasma process chamber for improving gas inlet uniformity, characterized by: The process chamber comprises a main body, wherein a plurality of electrode plates with air holes are arranged in the main body, wherein the electrode plates with air holes are distributed from top to bottom, and the interlayer between adjacent electrode plates with air holes forms a product processing area; The electrode plate with air holes has a number of air holes, which are arranged on the side of the electrode plate facing the product processing area and are evenly distributed; The process gas passes through the pores of the electrode plate with pores and evenly fills the product processing area, forming a plasma process chamber structure that improves the uniformity of gas intake; An electrode insulating sheath is provided on the electrode plate with air holes, which is connected to a gas input connector. An electrode introduction insulating seal is provided at the connection between the gas input connector and the process chamber body. The gas input connector is connected to a gas pipe joint, which is connected to an insulating gas pipe.

2. A plasma process chamber for improving gas intake uniformity according to claim 1, characterized in that: An electrode mounting plate is provided in the main body of the process chamber, and the electrode mounting plate is used for loading the electrode plate with air holes.

3. The plasma process chamber for improving gas intake uniformity according to claim 2, characterized in that: An electrode plate gas path cover is provided on the other side of the electrode plate with air holes.

4. The plasma process chamber for improving gas intake uniformity according to claim 3, characterized in that: There are four vacuum ports at the rear of the process chamber body.