Semiconductor groove corrosion processing device
The clamping mechanism composed of a limiting ring and a supporting ring solves the problem of uneven etching during semiconductor trench etching, thereby achieving uniformity and stability in semiconductor trench etching.
Patent Information
- Application Number
- CN202422344451.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-25
- Publication Date
- 2025-09-19
- Estimated Expiration
- 2034-09-25
AI Technical Summary
In the existing semiconductor trench etching process, the concentrations and diffusion rates of reactants and products at the center and edge of the wafer are inconsistent, resulting in uneven etching.
A clamping mechanism consisting of a limit ring and a support ring is used. Through the coordinated movement of the clamping plate and the slide rod, the semiconductor and the limit ring are set concentrically, and the annular baffle is used to limit the contact area of the etching liquid to ensure etching uniformity.
The method achieves consistent etching speeds at the semiconductor edge and center during semiconductor trench etching, thereby improving etching uniformity and stability.
Smart Images
Figure CN223363132U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of semiconductor processing equipment, and in particular relates to a semiconductor groove etching processing device. Background Art
[0002] A semiconductor refers to a material whose electrical conductivity at room temperature is between that of a conductor and an insulator.
[0003] Semiconductors are used in integrated circuits, consumer electronics, communication systems, photovoltaic power generation, lighting, high-power power conversion and other fields. For example, diodes are devices made of semiconductors.
[0004] Semiconductor trench etching is a crucial step in the semiconductor manufacturing process. It involves etching trenches of defined shapes and depths into semiconductor materials. These trenches are crucial to the performance and functionality of semiconductor devices. Trench etching methods and techniques are constantly evolving to meet the increasingly complex semiconductor designs and higher performance requirements.
[0005] Semiconductor trench etching methods mainly include wet etching and dry etching. Wet etching uses chemical solutions to react with semiconductor materials to etch grooves. During the etching process, the concentrations of reactants and products at the center and edge of the wafer, as well as the corresponding diffusion rates, are inconsistent, resulting in uneven etching at the center and edge of the wafer. Utility Model Content
[0006] In view of the above situation, in order to overcome the defects of the prior art, the utility model provides a semiconductor trench etching processing device capable of uniform etching.
[0007] To achieve the above-mentioned purpose, the utility model adopts the following technical solutions: a semiconductor groove etching processing device, comprising a limiting ring, a support ring fixedly connected to the inner wall of the limiting ring; the limiting ring is provided with a clamping mechanism for fixing the semiconductor, and the lower surface of the support ring is fixedly connected to an annular baffle; the clamping mechanism comprises a plurality of clamping plates evenly distributed along the circumference, and a plurality of the clamping plates are fixedly connected to an inclined plate; a plurality of slide cylinders are fixedly connected to the limiting ring, and a plurality of the clamping plates are fixedly connected to a slide rod slidably connected to the plurality of the slide cylinders; a force plate is fixedly connected to the slide rod, and a top spring corresponding to the force plate is provided in the slide cylinder.
[0008] Furthermore, a reset ring corresponding to the slide rod is rotatably connected in the limiting ring, and a reset assembly corresponding to the slide rod is provided on the reset ring.
[0009] Furthermore, the reset assembly includes a receiving groove corresponding to the slide rod, and the reset ring is provided with a driving slope that drives the slide rod to slide along the slide cylinder.
[0010] Furthermore, the slide bar is provided with a force slope corresponding to the driving slope.
[0011] Furthermore, a shift rod is fixedly connected to the reset ring, and a sliding groove corresponding to the shift rod is provided on the limiting ring.
[0012] Furthermore, the clamping plate and the inclined plate are both provided with fan-shaped blocks corresponding to the semiconductors.
[0013] Furthermore, the height of the upper surface of the limiting ring is greater than the height of the upper surface of the supporting ring.
[0014] Compared with the prior art, the beneficial effects of the present invention are:
[0015] When the utility model is in use, the semiconductor is limited and fixed by cooperating with the clamping plate and the support ring; the driving slope on the reset ring is coordinated with the force slope on the slide bar, so that the semiconductor and the support ring are concentrically arranged to improve the symmetry of semiconductor corrosion; in addition, during the groove corrosion process of the semiconductor, the etching liquid used for groove corrosion is restricted by the annular baffle to limit the area of contact between the etching liquid and the semiconductor, which can effectively reduce the diffusion rate of reactants and products at the edge of the semiconductor, so that the etching rate at the edge and the center of the semiconductor is consistent. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 It is a structural diagram of the utility model;
[0017] Figure 2 It is a cross-sectional view of the utility model;
[0018] Figure 3 For this utility model Figure 2 A magnified schematic diagram of area A in the middle;
[0019] Figure 4 It is a cross-sectional view of the clamping mechanism in the present utility model;
[0020] In the figure: 1. limit ring, 2. annular baffle, 3. support ring, 4. splint, 5. tilt plate, 6. shift rod, 7. reset ring, 8. driving ramp, 9. receiving groove, 10. force ramp, 11. slide rod, 12. slide cylinder, 13. force plate, 14. top spring. DETAILED DESCRIPTION
[0021] A semiconductor trench etching processing device, such as Figure 1-4As shown, it includes a limit ring 1, and a support ring 3 is fixed to the inner wall of the limit ring 1; the limit ring 1 is provided with a clamping mechanism for fixing the semiconductor, and the lower surface of the support ring 3 is fixed with an annular baffle 2; the clamping mechanism includes a number of clamping plates 4 evenly distributed along the circumference, and several of the clamping plates 4 are fixed with inclined plates 5; the limit ring 1 is fixed with a number of slide cylinders 12, and several of the clamping plates 4 are fixed with slide rods 11 slidably connected to the number of slide cylinders 12; the slide rod 11 is fixed with a force plate 13, and a top spring 14 corresponding to the force plate 13 is provided in the slide cylinder 12.
[0022] When the utility model is in use, the semiconductor is placed on the support ring 3 for support, with the groove corrosion surface facing downward; the semiconductor is clamped and fixed by the clamping plate 4 to improve the stability of the semiconductor during the groove corrosion process; specifically, the semiconductor is placed between the plurality of clamping plates 4 along the inclined plate 5, the top spring 14 acts on the force-bearing plate 13, and the force-bearing plate 13 acts on the clamping plate 4 through the slide rod 11, so that the clamping plate 4 clamps and fixes the semiconductor; in addition, during the groove corrosion process of the semiconductor, the etching liquid used for groove corrosion is restricted by the annular baffle 2 to limit the area of contact between the etching liquid and the semiconductor, which can effectively reduce the diffusion rate of reactants and products at the edge of the semiconductor, so that the etching rate at the edge and the center of the semiconductor is consistent.
[0023] Furthermore, a reset ring 7 corresponding to the slide rod 11 is rotatably connected inside the limit ring 1, and a reset component corresponding to the slide rod 11 is provided on the reset ring 7; the slide rod 11 is driven to move by the reset component on the reset ring 7, and the slide rod 11 moves through the clamping plate 4, so that the area clamped by the multiple clamping plates 4 is concentrically arranged with the limit ring 1, and the semiconductor is concentrically arranged with the limit ring 1, so as to improve the uniformity of semiconductor corrosion.
[0024] Furthermore, the reset assembly includes a receiving groove 9 corresponding to the slide rod 11. When the clamp 4 drives the slide rod 11 to move under the action of the semiconductor, the slide rod 11 slides along the slide cylinder 12 into the receiving groove 9; the reset ring 7 is provided with a driving slope 8 that drives the slide rod 11 to slide along the slide cylinder 12, and the slide rod 11 is provided with a force slope 10 corresponding to the driving slope 8; by driving the reset ring 7 to rotate, the driving slope 8 contacts the force slope 10 on the slide rod 11, so that the slide rod 11 drives the clamp 4 to move, and the clamp 4 drives the semiconductor to move; when the slide rod 11 contacts the inner wall of the reset ring 7, the area that can be clamped by the clamp 4 is consistent with the diameter of the semiconductor.
[0025] Furthermore, a lever 6 is fixedly connected to the reset ring 7 and can drive the reset ring 7 to rotate, and a sliding groove for accommodating the movement of the lever 6 is provided on the limiting ring 1.
[0026] Furthermore, the clamping plate 4 and the inclined plate 5 are both provided with fan-shaped blocks for clamping the semiconductor.
[0027] Furthermore, the height of the upper surface of the limiting ring 1 is greater than the height of the upper surface of the supporting ring 3 , so as to form an accommodating cavity for accommodating the semiconductor.
[0028] The working process of this utility model is:
[0029] When the utility model is in use, the semiconductor is placed on the support ring 3 for support, with the groove corrosion surface facing downward; the semiconductor is placed between a plurality of clamping plates 4 along the inclined plate 5, and the force-bearing plate 13 is acted on by the top spring 14. The force-bearing plate 13 acts on the clamping plate 4 through the slide rod 11, so that the clamping plate 4 clamps and fixes the semiconductor; at the same time, under the action of the clamping plate 4, the slide rod 11 moves to the end away from the clamping plate 4 into the accommodating groove 9.
[0030] The reset ring 7 is driven to rotate by the shift rod 6, and the reset ring 7 drives the driving slope 8 to contact the force slope 10 on the slide rod 11, driving the slide rod 11 to slide along the slide cylinder 12; the slide rod 11 drives the clamping plate 4 to move, and the clamping plate 4 drives the semiconductor to move, so that the area clamped by the multiple clamping plates 4 is concentrically arranged with the limit ring 1, so that the semiconductor and the limit ring 1 are concentrically arranged.
[0031] In addition, during the trench etching process of the semiconductor, the etching liquid used for trench etching is restricted by the annular baffle 2 to limit the area of contact between the etching liquid and the semiconductor, which can effectively reduce the diffusion rate of reactants and products at the edge of the semiconductor, making the etching rate at the edge and center of the semiconductor consistent.
Claims
1. A semiconductor trench etching processing device, characterized in that: The invention comprises a limiting ring (1), the inner wall of which is fixedly connected to a support ring (3); the limiting ring (1) is provided with a clamping mechanism for fixing the semiconductor, and the lower surface of the support ring (3) is fixedly connected to an annular baffle (2); the clamping mechanism comprises a plurality of clamping plates (4) uniformly distributed along the circumference, and a plurality of the clamping plates (4) are fixedly connected to an inclined plate (5); the limiting ring (1) is fixedly connected to a plurality of slide cylinders (12), and a plurality of the clamping plates (4) are fixedly connected to a plurality of slide cylinders (12); a force plate (13) is fixedly connected to the slide rod (11), and a top spring (14) corresponding to the force plate (13) is provided in the slide cylinder (12).
2. The semiconductor trench etching apparatus according to claim 1, wherein: A reset ring (7) corresponding to the slide bar (11) is rotatably connected inside the limiting ring (1), and a reset assembly corresponding to the slide bar (11) is provided on the reset ring (7).
3. The semiconductor trench etching apparatus according to claim 2, wherein: The reset assembly includes a receiving groove (9) corresponding to the slide rod (11), and the reset ring (7) is provided with a driving slope (8) for driving the slide rod (11) to slide along the slide cylinder (12).
4. The semiconductor trench etching apparatus according to claim 3, wherein: The slide bar (11) is provided with a force slope (10) corresponding to the driving slope (8).
5. The semiconductor trench etching apparatus according to claim 2 or 4, wherein: A shifting rod (6) is fixedly connected to the reset ring (7), and a sliding groove corresponding to the shifting rod (6) is provided on the limiting ring (1).
6. The semiconductor trench etching apparatus according to claim 1, wherein: The clamping plate (4) and the inclined plate (5) are both provided with sector-shaped blocks corresponding to the semiconductors.
7. The semiconductor trench etching apparatus according to claim 1, wherein: The height of the upper surface of the limiting ring (1) is greater than the height of the upper surface of the supporting ring (3).