Mask plate and display panel

Abstract

The utility model discloses a mask plate and a display panel. The mask plate comprises a mask strip. The mask strip extends along a first direction and comprises at least two mask pattern structures, and the at least two mask pattern structures are arranged along the first direction; wherein the mask strip comprises a first surface and a second surface which are oppositely arranged in the thickness direction, and the thickness direction intersects with the first direction; the mask strip further comprises protruding structures, and at least part of each protruding structure is located between every two adjacent mask pattern structures. The second surface comprises a mask surface of the mask pattern structure and a convex surface of the convex structure, the convex surface is farther away from the first surface than the mask surface, and the size of the convex structure is larger than that of the mask pattern structure in the thickness direction. Local thickening of the mask strip is achieved by arranging the protruding structures, the strength of the mask strip can be improved, the stability of the mask strip is better, the adsorption influence of other structures on the mask pattern structure is reduced, the evaporation quality is improved, and the defect that the evaporation shadow of the display panel is poor is overcome.

Description

Technical Field

[0001] At least one embodiment of the present utility model relates to a mask plate and a display panel. Background Art

[0002] In the production process of organic light-emitting diode (OLED) displays, a fine metal mask (FMM) is used to evaporate organic materials. Therefore, the quality of the FMM determines the quality of the organic material evaporation, which in turn affects the display performance of the display device. Utility Model Content

[0003] At least one embodiment of the present invention provides a mask plate and a display panel.

[0004] At least one embodiment of the present invention provides a mask plate, which includes: a mask strip; the mask strip extends along a first direction and includes at least two mask pattern structures, and the at least two mask pattern structures are arranged along the first direction; wherein the mask strip includes a first surface and a second surface arranged opposite to each other in a thickness direction, and the thickness direction intersects with the first direction; the mask strip also includes a protruding structure, and at least a portion of the protruding structure is located between two adjacent mask pattern structures; the second surface includes a mask surface of the mask pattern structure and a protruding surface of the protruding structure, and the protruding surface is farther away from the first surface than the mask surface, and in the thickness direction, the size of the protruding structure is larger than the size of the mask pattern structure.

[0005] For example, according to at least one embodiment of the present invention, the mask strip also includes a mounting structure, which is located on at least one side of the at least two mask pattern structures in the first direction; the second surface also includes a mounting surface of the mounting structure, which is farther away from the first surface than the mask surface, and in the thickness direction, the size of the mounting structure is not less than the size of the protruding structure.

[0006] For example, according to at least one embodiment of the present invention, the mask strip also includes a connecting structure, and the second surface also includes a first connecting surface of the connecting structure, and the first connecting surface is connected between the mask surface and the mounting surface; in the thickness direction, the size of the connecting structure is not less than the size of the mask pattern structure and not larger than the size of the mounting structure, and the size of the connecting structure gradually increases along the direction from the mask surface to the mounting surface; the direction from the mask surface to the mounting surface is parallel to the first direction.

[0007] For example, according to at least one embodiment of the present invention, the first surface is located in a plane, and in the thickness direction, the size of the mounting structure is 10 micrometers to 30 micrometers.

[0008] For example, according to at least one embodiment of the present invention, the second surface also includes a second connecting surface of the raised structure, and the second connecting surface is connected between the mask surface and the raised surface; in the thickness direction, the distance between the second connecting surface and a reference surface perpendicular to the thickness direction is not less than the distance between the mask surface and the reference surface, and is not greater than the distance between the raised surface and the reference surface, and the distance between the second connecting surface and the reference surface gradually increases along the direction from the mask surface to the raised surface; the direction from the mask surface to the raised surface is parallel to the first direction.

[0009] For example, according to at least one embodiment of the present invention, the first surface is located in a plane, and in the thickness direction, the size of the protrusion structure is 3 microns to 30 microns, and the size of the mask pattern structure is 1 micron to 15 microns.

[0010] For example, according to at least one embodiment of the present invention, a size of the mask pattern structure in the first direction is larger than a size of a portion of the convex surface located between the two adjacent mask pattern structures in the first direction.

[0011] For example, according to at least one embodiment of the present invention, the protruding structure surrounds at least a portion of the mask pattern structure.

[0012] For example, according to at least one embodiment of the present invention, a portion of the convex surface located between two adjacent mask pattern structures extends along a second direction, and the second direction intersects with the first direction and the thickness direction respectively.

[0013] For example, according to at least one embodiment of the present invention, the mask plate also includes an auxiliary mask layer; the auxiliary mask layer includes a supporting structure, the supporting structure includes a first supporting bar extending along the first direction and a second supporting bar extending along the second direction, the second direction intersecting with the first direction and the thickness direction respectively; the second supporting bar includes a supporting surface, the supporting surface is located on the side of the supporting structure close to the mask bar, and the orthographic projection of the raised surface on the auxiliary mask layer overlaps with the supporting surface; the first supporting bar and the second supporting bar intersect with each other to define a mask through hole; the orthographic projection of the mask through hole on a reference plane perpendicular to the thickness direction overlaps with the orthographic projection of the mask pattern structure on the reference plane.

[0014] For example, according to at least one embodiment of the present invention, at least one mask through hole includes a first mask opening and a second mask opening arranged opposite to each other in the thickness direction, and the first mask opening and the support surface are located in the same plane; in at least one of the first direction and the second direction, the size of the second mask opening is smaller than the size of the first mask opening; the orthographic projection of the first mask opening on the reference surface includes a first outer contour, the orthographic projection of the second mask opening on the reference surface includes a second outer contour, and the orthographic projection of the mask pattern structure on the reference surface includes a third outer contour; the range surrounded by the third outer contour is within the range surrounded by the first outer contour, and the range surrounded by the second outer contour does not exceed the range surrounded by the third outer contour.

[0015] For example, according to at least one embodiment of the present invention, the mask through hole includes a first sub-mask hole and a second sub-mask hole connected to each other in the thickness direction, the first sub-mask hole includes the first mask opening, the second sub-mask hole includes the second mask opening, and the second mask opening is located on the side of the second sub-mask hole away from the first sub-mask hole; in the thickness direction, the ratio of the size of the first sub-mask hole to the size of the supporting structure is 0.2-0.6.

[0016] For example, according to at least one embodiment of the present invention, a size of the support surface in the first direction is smaller than a size of a portion of the protruding surface located between the two adjacent mask pattern structures in the first direction.

[0017] For example, according to at least one embodiment of the present invention, the auxiliary mask layer includes a mask area and an edge area surrounding the mask area, the mask through hole is located in the mask area, and a stress balance structure is provided in the edge area; at least a portion of the stress balance structure has a dimension in the thickness direction that is smaller than a dimension of the support structure in the thickness direction.

[0018] For example, according to at least one embodiment of the present invention, the stress balancing structure includes an auxiliary groove, and the auxiliary groove includes a groove opening and a bottom wall arranged opposite to each other in the thickness direction; the groove opening is closer to the mask strip than the bottom wall.

[0019] For example, according to at least one embodiment of the present invention, the auxiliary groove is located on at least one side of the mask region in the first direction.

[0020] For example, according to at least one embodiment of the present invention, in the thickness direction, the ratio of the depth of the auxiliary groove to the size of the support structure is 0.2-0.6.

[0021] For example, according to at least one embodiment of the present invention, the stress balancing structure includes an auxiliary through hole, and the auxiliary through hole includes a first auxiliary opening and a second auxiliary opening arranged opposite to each other in the thickness direction, and the second auxiliary opening and the second mask opening are located in the same plane; in at least one of the first direction and the second direction, the size of the second auxiliary opening is smaller than the size of the first auxiliary opening.

[0022] For example, according to at least one embodiment of the present invention, the mask plate further includes a shielding bar, and the shielding bar is configured to shield the opening of the auxiliary through hole.

[0023] For example, according to at least one embodiment of the present invention, the auxiliary through hole is located on at least one side of the mask region in the second direction.

[0024] For example, according to at least one embodiment of the present invention, the auxiliary through hole includes a first sub-auxiliary hole and a second sub-auxiliary hole connected to each other in the thickness direction, the first sub-auxiliary hole includes the first auxiliary opening, the second sub-auxiliary hole includes the second auxiliary opening, and the second auxiliary opening is located on the side of the second sub-auxiliary hole away from the first sub-auxiliary hole; in the thickness direction, the ratio of the size of the first sub-auxiliary hole to the thickness of the support structure is 0.2-0.6.

[0025] For example, according to at least one embodiment of the present invention, a dimension of the support structure in the thickness direction is 50 micrometers to 100 micrometers.

[0026] For example, according to at least one embodiment of the present invention, the auxiliary mask layer includes a mask area, and the mask through hole is located in the mask area; the mask plate also includes a fixing frame, the fixing frame includes a connecting portion and a peripheral portion surrounding the connecting portion, and the connecting portion is configured to at least surround the mask area; the connecting portion is provided with a connecting groove, and at least part of the supporting structure extends into the connecting groove and is fixedly connected to the connecting groove; the depth of the connecting groove in the thickness direction is not less than the size of the supporting structure in the thickness direction.

[0027] At least one embodiment of the present invention provides a display panel, comprising a plurality of sub-pixels, wherein the plurality of sub-pixels are formed using the mask pattern structure of the mask plate of any of the above embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present invention, rather than limiting the present invention.

[0029] Figure 1A A schematic plan view of a fine metal mask.

[0030] Figure 1B for Figure 1A Schematic cross-sectional view of the fine metal mask shown.

[0031] Figure 2 This is a schematic plan view of a vapor deposition substrate.

[0032] Figure 3A for Figure 1A Schematic plan view of the pixel hole of the fine metal mask shown.

[0033] Figure 3B for Figure 3A Schematic cross-section of the pixel hole shown.

[0034] Figure 4A and Figure 4B To pass such Figure 1A Schematic diagram of the deposition pattern obtained by evaporation in different areas of the pixel mesh region of the fine metal mask shown.

[0035] Figure 5 A schematic plan view of a mask plate provided in at least one embodiment of the present invention.

[0036] Figure 6A for Figure 5 A schematic plan view of the mask strips in the mask plate shown.

[0037] Figure 6B for Figure 6A Schematic cross-sectional view of the mask strip shown.

[0038] Figure 7 To pass such Figure 5 A partial schematic diagram of the vapor deposition pattern obtained by vapor deposition on the mask shown.

[0039] Figure 8A for Figure 5 A schematic plan view of the auxiliary mask layer in the mask plate shown.

[0040] Figure 8B for Figure 8A A schematic cross-sectional view of the auxiliary mask layer is shown.

[0041] Figure 9 for Figure 5 Schematic diagram of the orthographic projection of the mask through hole in the mask plate on the reference surface and the orthographic projection of the mask pattern structure on the reference surface.

[0042] Figure 10 for Figure 5 The cross-sectional view of the mask plate shown is taken along line AA'.

[0043] Figure 11A for Figure 5 A schematic plan view of the fixed frame in the mask plate shown.

[0044] Figure 11B for Figure 11A Schematic cross-section of the fixed frame shown.

[0045] Figure 12 For the general Figure 8A The auxiliary mask layer and Figure 11A Schematic diagram of the fixed frame being assembled.

[0046] Figure 13 For the general Figure 6A The mask strip shown, Figure 8A The auxiliary mask layer shown, Figure 11A Schematic diagram of the fixed frame and the shielding strip assembled together.

[0047] Figure 14 for Figure 5 The cross-sectional view of the mask plate shown is taken along line BB'.

[0048] Figure 15 A schematic diagram of a sub-pixel of a display panel provided by at least one embodiment of the present invention. DETAILED DESCRIPTION

[0049] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the described embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0050] Unless otherwise defined, technical or scientific terms used in this utility model should have the ordinary meaning understood by people with ordinary skills in the field to which this utility model belongs. The words "first", "second" and similar terms used in this utility model do not indicate any order, quantity or importance, but are simply used to distinguish different components. The words "include" or "comprising" and similar words mean that the elements or objects listed before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0051] As used in this disclosure, terms such as "parallel," "perpendicular," and "identical" include strictly "parallel," "perpendicular," and "identical," as well as terms such as "approximately parallel," "approximately perpendicular," and "approximately identical," which include certain errors. These terms, taking into account measurement errors and errors associated with the measurement of specific quantities (i.e., limitations of the measurement system), represent acceptable deviations from a specific value as determined by a person skilled in the art. The "center" in the embodiments of this disclosure may include a position strictly at the geometric center, as well as a position approximately centered within a small area around the geometric center. For example, "approximately" can mean within one or more standard deviations, or within 10% or 5% of the stated value.

[0052] The organic light-emitting materials in OLED display panels are produced using a vacuum evaporation process. This process utilizes a fine metal mask. The precise opening pattern on the mask allows for precise and controllable deposition of the organic light-emitting material onto the substrate. These masks are typically long strips, and multiple strips are stretched, welded, and assembled using a stretching machine to create a complete mask sheet suitable for use in the evaporation machine.

[0053] Some mass-produced OLED displays have a PPI (Pixels Per Inch) of 400 to 600, and the mask thickness is 25 to 40 microns. Displays suitable for augmented reality (AR) and virtual reality (VR) devices require higher PPIs, such as 850 to 5000 PPI. For example, some displays have a resolution of 1200 to 1500 PPI.

[0054] During the research, the inventors of the present utility model found that due to the small pixel size of high-PPI products, many technical indicators need to reach the maximum allowable limits, and the difficulty of the production process of fine metal masks is greatly increased. The production technology and manufacturing process of some fine metal masks are difficult to meet the technical requirements of high-PPI products.

[0055] For example, for products with a PPI above 1200, the thickness of the fine metal mask in the pixel mesh area needs to be reduced to 3-15 microns. During the stretching process, the fine metal mask is prone to defects such as deformation, wrinkling, and breakage. Moreover, due to the high precision requirements of the fine metal mask, the stretching process is also very difficult. In addition, during the evaporation process, the adhesion state of the fine metal mask to the substrate when it is attracted by the magnetic field is also difficult to control.

[0056] Figure 1A A schematic plan view of a fine metal mask. Figure 1B for Figure 1ASchematic cross-sectional view of the fine metal mask shown. Figure 2 This is a schematic plan view of a vapor deposition substrate.

[0057] refer to Figure 1A and Figure 1B The overall thickness of the fine metal mask 1 is uniform, and the pixel mesh area 01 is a network, which is divided into evaporation areas by additional shielding strips (not shown in the figure). Figure 2 The evaporation substrate 2 includes a plurality of display areas 02 arranged in an array, and the display areas 02 correspond one to one with the evaporation areas formed by dividing the pixel mesh area 01 by the shielding strips.

[0058] Figure 3A for Figure 1A Schematic plan view of the pixel hole of the fine metal mask shown. Figure 3B for Figure 3A Schematic cross-section of the pixel hole shown.

[0059] refer to Figure 3A and Figure 3B To meet the vapor deposition requirements of products with a PPI of 1200 or higher, the pixel apertures 001 in the pixel mesh area have very small opening sizes and spacing. Furthermore, pixel apertures 001 need to have a small cross-sectional angle a to minimize obstruction of the vapor deposition material. Consequently, the overall thickness of the fine metal mask is very thin.

[0060] However, excessively thin high-PPI fine metal masks can lead to lower strength and poorer stability. For example, during the production process, fine metal masks are prone to deformation and damage, and their surfaces are prone to defects such as wrinkles and creases. For example, during the stretching process, actions such as stretching, handling, and transferring the fine metal mask can easily cause defects. For example, during the cleaning process, the fine metal mask is prone to wrinkles and deformation. When the fine metal mask exhibits these defects, it is difficult for the fine metal mask to be evenly bonded to the substrate, resulting in poor evaporation shadows.

[0061] During the vapor deposition process, the mask is attracted to the lower surface of the substrate to be deposited by the magnetic field, thereby bonding with the substrate. However, when the high-PPI fine metal mask is magnetically attracted by the magnetic field, it is difficult to bond well with the substrate.

[0062] For example, under the action of a magnetic field, there is a difference in the magnetic force exerted on the pixel mesh area of ​​the fine metal mask and the solid material structure area surrounding the pixel mesh area. This difference causes mechanical instability at the boundary between the pixel mesh area and the solid material structure area. For example, because the thickness of the fine metal mask in the pixel mesh area is extremely thin, the solid material structure area is structurally unstable when subjected to external forces, and is prone to distortion, deformation, and wrinkling. As a result, gaps are likely to appear between the edge of the pixel mesh area and the substrate, making it difficult for the precision metal mask and the substrate to fit evenly, resulting in poor evaporation shadows.

[0063] Figure 4A and Figure 4B To pass such Figure 1A Schematic diagram of the deposition pattern obtained by evaporation in different areas of the pixel mesh region of the fine metal mask shown.

[0064] refer to Figure 4A and Figure 4B Based on the above reasons, the pattern obtained by evaporation in the middle area of ​​the pixel mesh area of ​​the fine metal mask is good, but the pattern obtained by evaporation in the edge area of ​​the pixel mesh area has poor shadows, which affects the display effect of the display panel.

[0065] At least one embodiment of the present invention provides a mask plate, comprising a mask strip. The mask strip extends along a first direction and includes at least two mask pattern structures, the at least two mask pattern structures being arranged along the first direction; wherein the mask strip includes a first surface and a second surface disposed opposite each other in a thickness direction, the thickness direction intersecting the first direction; the mask strip also includes a protrusion structure, at least a portion of the protrusion structure being located between two adjacent mask pattern structures; the second surface includes a mask surface of the mask pattern structure and a protrusion surface of the protrusion structure, the protrusion surface being further away from the first surface than the mask surface, and the protrusion structure being larger than the mask pattern structure in the thickness direction.

[0066] At least one embodiment of the present invention provides a display panel including a plurality of sub-pixels, wherein the plurality of sub-pixels are formed using the mask pattern structure of the mask plate described above.

[0067] At least one embodiment of the present invention provides a mask plate and a display panel, in which the mask pattern structure in the mask strip can be made very thin to meet the requirements of high resolution. At the same time, by providing a raised structure to achieve local thickening of the mask strip, the strength of the mask strip can be improved, making the stability of the mask strip better. Moreover, when the mask strip is assembled with other structures in the mask plate to form a mask plate, the mask pattern structure can be kept as far away from the other structures as possible to reduce the adsorption effect of the other structures on the mask pattern structure. As a result, the mask strip and the evaporation substrate can be better fitted, with basically no gaps, thereby improving the evaporation quality and improving the defect of poor evaporation shadows on the display panel.

[0068] The mask strips and the display panel are described below with reference to the accompanying drawings and through some embodiments.

[0069] Figure 5 A schematic plan view of a mask plate provided in at least one embodiment of the present invention. Figure 6A for Figure 5 A schematic plan view of a mask strip 100 in a mask plate is shown. Figure 6B for Figure 6A A schematic cross-sectional view of the mask strip 100 is shown.

[0070] refer to Figures 5 to 6B At least one embodiment of the present invention provides a mask plate, including a mask strip 100. The mask strip 100 extends along a first direction Y and includes at least two mask pattern structures 110, and the at least two mask pattern structures 110 are arranged along the first direction Y. The mask pattern structure 110 may include a plurality of pixel holes arranged in an array (not shown in the figure), and the pixel holes may be used to deposit a layer of film on a substrate (e.g., a substrate having ... Figure 2 Subpixels are formed on a vapor deposition substrate (e.g., a substrate shown in FIG. ). For example, the vapor deposition substrate can be used to form a display panel, and the subpixels can be located in a display area of ​​the display panel. For example, the subpixels can include red subpixels, green subpixels, or blue subpixels.

[0071] For example, a single mask pattern structure can be used to form sub-pixels in the display area of ​​a single display panel. For example, a single mask pattern structure can be used to form sub-pixels in the display areas of two or more display panels, and the mask pattern structure's evaporation areas can be divided by shielding strips so that the divided evaporation areas correspond one-to-one to each display area.

[0072] refer to Figure 6A and Figure 6B The mask strip 100 includes a first surface 101 and a second surface 102 disposed opposite each other in a thickness direction Z, where the thickness direction Z intersects the first direction Y. For example, the thickness direction Z is perpendicular to the first direction Y. For example, the thickness direction Z refers to a direction along the thickness of the mask strip 100. For example, the thickness direction Z is perpendicular to the first surface 101.

[0073] refer to Figure 6A The mask strip 100 further includes a protruding structure 120, at least part of which is located between two adjacent mask pattern structures 110. Thus, the protruding structure 120 can prevent the mask pattern structures 110 from unstable deformation. Furthermore, the protruding structure 120 can also shield the evaporation material, thereby dividing the evaporation area.

[0074] refer to Figure 6A and Figure 6BThe second surface 102 includes a mask surface 111 of the mask pattern structure 110 and a raised surface 121 of the raised structure 120. The raised surface 121 is further away from the first surface 101 than the mask surface 111. For example, the raised surface 121 is raised from the mask surface 111. For example, the mask surface 111 refers to the surface of the mask pattern structure 110. For example, if the mask pattern structure 110 is a structure having mesh holes, the mask surface 111 refers to the surface of the portion excluding the mesh holes. In the thickness direction Z, the dimension T1 of the raised structure 120 is greater than the dimension T2 of the mask pattern structure 110, so that the strength of the mask strip 100 is increased by the thicker raised structure 120. For example, the dimension T2 of the mask pattern structure 110 refers to the dimension of the portion excluding the mesh holes of the mask pattern structure 110.

[0075] refer to Figures 5 to 6B In the mask plate provided by the embodiment of the present invention, the mask pattern structure 110 in the mask strip 100 can be made very thin to meet the demand for high resolution. At the same time, the thickness of the mask strip 100 is set differently according to the functions of different positions in the mask strip 100. By setting the protruding structure 120 to achieve local thickening of the mask strip 100, the strength of the mask strip 100 can be improved, and the stability of the mask strip 100 can be better. During the production process of the mask plate, the mask strip 100 is not easy to be damaged, nor is it easy to have defects such as wrinkles and creases. During the net stretching process, the defects of the locally thickened mask strip 100 caused by actions such as stretching, picking up and transferring are improved. The cleaning tolerance of the mask strip 100 can be enhanced, and it is not easy to be deformed and damaged during the cleaning process. Furthermore, when the mask strip 100 is assembled with other structures in the mask plate (such as the auxiliary mask layer 200 described in the embodiments below) to form a mask plate, the raised structures 120 can keep the mask pattern structure 110 as far away from these other structures as possible, which helps reduce the adsorption effect of these other structures on the mask pattern structure 110 during the evaporation process. As a result, the mask strip 100 can be better bonded to the evaporation substrate, with essentially no gap between the two surfaces of the mask strip 100 and the evaporation substrate, improving the evaporation quality and alleviating the defect of poor evaporation shadows on the display panel.

[0076] Figure 7 To pass such Figure 5 A partial schematic diagram of the vapor deposition pattern obtained by vapor deposition on the mask shown.

[0077] Combine Figures 5 to 7 By using the mask plate provided in the above embodiment for vapor deposition, the mask pattern structure 110 in the mask strip 100 can better fit with the vapor deposition substrate, and the pattern obtained by vapor deposition in the peripheral area of ​​the mask pattern structure 110 is good. Figure 3B The defect of poor shadow in the image is improved.

[0078] For example, the material of the mask strip includes a metal material with a small thermal expansion coefficient, such as nickel-iron alloy or nickel-cobalt alloy. For example, the mask strip can be prepared by wet etching, electrochemical deposition, or laser processing.

[0079] refer to Figure 6A and Figure 6B In some examples, the first surface 101 is located on a plane. For example, the first surface 101 is entirely planar, substantially completely aligned with the vapor deposition substrate, with substantially no gap between the first surface 101 and the vapor deposition substrate where they are aligned. For example, the first surface 101, excluding the pixel holes of the mask pattern structure 110, is located on the same plane.

[0080] refer to Figure 6A and Figure 6B For example, when the first surface 101 is a plane, the raised surface 121 refers to the surface of the raised structure 120 that is farthest from the first surface 101 in the thickness direction Z. For example, the raised surface 121 refers to the surface of the raised structure 120 that is farthest from the vertex of the first surface 101 in the thickness direction Z, as well as the surface within a certain size range surrounding the vertex. For example, the raised surface 121 can be a plane. However, the present invention is not limited thereto; for example, the raised surface can also be a curved surface.

[0081] refer to Figure 6A and Figure 6B In the thickness direction Z, the maximum dimension T1 of the protrusion structure 120 is 3 microns to 30 microns, and the maximum dimension T2 of the mask pattern structure 110 is 1 micron to 15 microns. Thus, the protrusion structure 120 can prevent the mask pattern structure 110 from deforming, and the mask pattern structure 110 is very thin, meeting the requirements of high resolution.

[0082] For example, the size of the protrusion structure in the thickness direction may be 3 microns to 25 microns. For example, the size of the protrusion structure in the thickness direction may be 5 microns to 20 microns. For example, the size of the protrusion structure in the thickness direction may be 7 microns to 15 microns. For example, the size of the protrusion structure in the thickness direction may be 10 microns to 12 microns.

[0083] For example, the size of the mask pattern structure in the thickness direction may be 1 micron to 10 microns. For example, the size of the mask pattern structure in the thickness direction may be 3 microns to 8 microns. For example, the size of the mask pattern structure in the thickness direction may be 5 microns to 7 microns.

[0084] refer to Figure 6A and Figure 6BThe dimension T1 of the raised structure 120 in the thickness direction Z is related to the dimension T2 of the mask pattern structure 110. If the raised surface 121 protrudes too little from the mask surface 111, the distance between the mask pattern structure 110 and other structures in the mask plate will be small, making it susceptible to adsorption by other structures. If the raised surface 121 protrudes too much from the mask surface 111, the height difference between the raised surface 121 and the mask surface 111 will be too large, resulting in uneven force distribution on the mask strip 100 and prone to breakage. Therefore, setting the thickness range of the raised structure 120 and the mask pattern structure 110 can improve the overall stability of the mask strip 100, prevent deformation of the mask strip 100, and make the overall force on the mask strip 100 more uniform.

[0085] refer to Figure 6A and Figure 6B In some examples, a dimension W2 of the mask pattern structure 110 in the first direction Y is greater than a dimension W1 of the portion of the raised surface 121 located between two adjacent mask pattern structures 110 in the first direction Y. For example, the total area of ​​the mask surface 111 in the second surface 102 is greater than the total area of ​​the raised surface 121. As a result, the mask pattern structures 110 are arranged more densely, which can improve the utilization rate of the mask strip 100.

[0086] refer to Figure 6A and Figure 6B In some examples, the raised structure 120 surrounds at least a portion of the mask pattern structure 110. For example, the raised structure 120 may surround a portion of the mask pattern structure 110 or circumferentially surround the mask pattern structure 110. This increases the strength of the mask strip 100 and the stability of the mask pattern structure 110. For example, the mask pattern structure 110 may be provided with a raised structure 120 on at least one side in a second direction X that intersects the first direction Y. For example, the mask pattern structure 110 may be provided with raised structures 120 on both sides in the second direction X.

[0087] refer to Figure 6A and Figure 6B In some examples, the portion of the raised surface 121 located between two adjacent mask pattern structures 110 extends along the second direction X, which intersects the first direction Y and the thickness direction Z. This allows for more uniform force on the raised structures 120. For example, the dimension of the raised surface 121 in the second direction X is no less than the dimension of the mask pattern structure 110 in the second direction X.

[0088] However, the present invention is not limited to this. For example, the raised surface may be a discontinuous surface. For example, the raised structure may be a columnar raised structure. As long as the raised structure can enhance the strength of the mask strips and prevent defects such as deformation and wrinkling in the mask pattern structure, the present invention is not limited to this.

[0089] refer to Figure 6A and Figure 6B In some examples, the mask strip 100 further includes a mounting structure 130, which is located on at least one side of at least two mask pattern structures 110 in the first direction Y. For example, the mounting structure 130 can be used to secure the mask strip 100 to other structures in the mask plate. For example, the mounting structure 130 can be located on both sides of all mask pattern structures 110 in the second direction X. For example, the mounting structure can be located on one side of all mask pattern structures in the first direction, but this is not a limitation of the present invention.

[0090] refer to Figure 6A and Figure 6B The second surface 102 further includes a mounting surface 131 of a mounting structure 130. Mounting surface 131 is further away from the first surface 101 than the mask surface 111. For example, mounting surface 131 protrudes from the mask surface 111. In the thickness direction Z, dimension T3 of mounting structure 130 is no less than dimension T1 of protruding structure 120. This thickens the mask strip 100 except for the mask pattern structure 110. The thicker mounting structure 130 increases the strength of the mask strip 100. Mounting structure 130 also prevents deformation of the mask pattern structure 110, allowing for better alignment between the mask strip 100 and the deposition substrate, thereby improving the evaporation shadow defect. Furthermore, when the mask strip 100 is assembled with other structures in the mask plate (such as the auxiliary mask layer 200 described in the embodiments below) to form the mask plate, mounting structure 130 can keep the mask pattern structure 110 as far away from these other structures as possible, thus reducing the adsorption effect of these other structures on the mask pattern structure 110 during the deposition process.

[0091] For example, the mounting structure may have the same dimensions as the raised structure in the thickness direction. For example, the mounting structure may have smaller dimensions than the raised structure in the thickness direction. For example, the mounting surface may protrude from the raised surface. For example, the mounting surface may be located in the same plane as the raised surface.

[0092] refer to Figure 6A and Figure 6BIn some examples, the first surface 101 is located in a plane, and in the thickness direction Z, the dimension T3 of the mounting structure 130 is 10 microns to 30 microns. For example, the mounting surface 131 can be welded to the fixing frame 300 in the embodiment described later. Setting the thickness of the mounting structure 130 to 10 microns to 30 microns is beneficial to improving the strength of the mask strip 100 and preventing the defect of laser melting through during the welding process. At the same time, the thickness difference between the mounting structure 130 and the mask pattern structure 110 will not be too large, which can improve the overall stability of the mask strip 100, prevent the mask strip 100 from being deformed, and make the overall force of the mask strip 100 more uniform.

[0093] refer to Figure 6A For example, the mounting surface 131 schematically shows a welding area Q welded to the fixing frame 300. However, the present invention is not limited thereto. The shape, size, and position of the welding area on the mounting surface can be adaptively changed according to different mask requirements.

[0094] For example, the mounting structure may have a dimension in the thickness direction of 10 microns to 28 microns. For example, the mounting structure may have a dimension in the thickness direction of 12 microns to 25 microns. For example, the mounting structure may have a dimension in the thickness direction of 15 microns to 23 microns. For example, the mounting structure may have a dimension in the thickness direction of 18 microns to 20 microns. For example, the dimensions of the mounting structure at each location in the thickness direction are substantially equal.

[0095] refer to Figure 6A and Figure 6B In some examples, the mask strip 100 further includes a connection structure 140 , and the second surface 102 further includes a first connection surface 141 of the connection structure 140 . The first connection surface 141 is connected between the mask surface 111 and the mounting surface 131 .

[0096] For example, the first connecting surface may be a plane or a curved surface, and the present invention does not limit this.

[0097] refer to Figure 6A and Figure 6B In the thickness direction Z, dimension T4 of the connection structure 140 is no less than dimension T2 of the mask pattern structure 110 and no greater than dimension T3 of the mounting structure 130. Dimension T4 of the connection structure 140 gradually increases along a direction from the mask surface 111 toward the mounting surface 131. For example, the direction from the mask surface 111 toward the mounting surface 131 can be parallel to the first direction Y. The connection structure 140 can serve as a thickness transition structure between the mask pattern structure 110 and the mounting structure 130. The gradual change in the dimension of the connection structure 140 facilitates stress dispersion, thereby preventing stress concentration defects at the junction between the two surfaces.

[0098] refer to Figure 6A and Figure 6B For example, the first connection surface 141 may be a plane that intersects and is not perpendicular to the thickness direction Z. For example, the first connection surface 141 may have a non-90° angle with the mask surface 111 , and the first connection surface 141 may have a non-90° angle with the mounting surface 131 .

[0099] refer to Figure 6A and Figure 6B For example, at least two of the mask pattern structure 110, the protrusion structure 120, the mounting structure 130, and the connection structure 140 may be integrally formed. For example, the mask pattern structure 110, the protrusion structure 120, the mounting structure 130, and the connection structure 140 may be integrally formed. However, the present invention is not limited thereto. For example, the mask pattern structure, the protrusion structure, the mounting structure, and the connection structure may also be fixed to each other by assembly or other methods.

[0100] refer to Figure 6A and Figure 6B In some examples, the second surface 102 further includes a second connecting surface 122 of the protruding structure 120, where the second connecting surface 122 is connected between the mask surface 111 and the protruding surface 121. For example, the second connecting surface 122 may be a side surface of the protruding structure 120. For example, if the protruding structure 120 is located between two adjacent mask pattern structures 110, the second connecting surface 122 may be connected to at least one side, such as both sides, of the protruding surface 121 along the first direction Y. For example, if the protruding structure 120 is located on one side of the mask pattern structure 110 in the second direction X, the second connecting surface 122 may be connected to one side of the protruding surface 121 along the second direction X.

[0101] For example, the second connecting surface may be a plane or a curved surface, which is not limited in the present invention.

[0102] refer to Figure 6A and Figure 6B , a plane perpendicular to the thickness direction Z is a reference plane S. The first surface 101 is located on the reference plane S as an example for description. In the thickness direction Z, the distance T5 between the second connecting surface 122 and the reference plane S perpendicular to the thickness direction Z is no less than the distance T2 between the mask surface 111 and the reference plane S, and no greater than the distance T1 between the raised surface 121 and the reference plane S. The distance T5 between the second connecting surface 122 and the reference plane S gradually increases in a direction from the mask surface 111 toward the raised surface 121. For example, the direction from the mask surface 111 toward the raised surface 121 can be parallel to the first direction Y.

[0103] refer to Figure 6A and Figure 6BThe portion of the protruding structure 120 corresponding to the second connecting surface 122 can serve as a thickness transition structure, and the distance between the second connecting surface 122 and the reference surface S is gradually changed, which is conducive to dispersing stress to prevent stress concentration defects from occurring at the connection between the two surfaces.

[0104] refer to Figure 6A and Figure 6B For example, the second connecting surface 122 may be a plane that intersects and is not perpendicular to the thickness direction Z. For example, the second connecting surface 122 may have a non-90° angle with the mask surface 111 , and the second connecting surface 122 may have a non-90° angle with the protruding surface 121 .

[0105] Figure 8A for Figure 5 A schematic plan view of the auxiliary mask layer 200 in the mask plate is shown. Figure 8B for Figure 8A A schematic cross-sectional view of the auxiliary mask layer 200 is shown.

[0106] refer to Figure 5 、 Figure 8A and Figure 8B In some examples, the mask plate further includes an auxiliary mask layer 200. The auxiliary mask layer 200 includes a support structure 210, which includes first support bars 211 extending along a first direction Y and second support bars 212 extending along a second direction X. The second direction X intersects the first direction Y and the thickness direction Z. For example, the first direction Y, the second direction X, and the thickness direction Z are mutually perpendicular. The support structure 210 in the auxiliary mask layer 200 experiences a strong magnetic force in a magnetic field, effectively supporting the mask bars 100 and ensuring better adhesion to the evaporation substrate.

[0107] refer to Figure 5 、 Figure 8A and Figure 8B The second support strip 212 includes a support surface 212a, which is located on the side of the support structure 210 close to the mask strip 100, and the orthographic projection of the raised surface 121 on the auxiliary mask layer 200 overlaps with the support surface 212a. Figure 9 The supporting surface 212 a can provide a supporting force to the raised surface 121 , so that the auxiliary mask layer 200 can stably support the mask strip 100 , thereby improving the evaporation quality.

[0108] refer to Figure 5 、 Figure 8A and Figure 8BThe first support bars 211 and the second support bars 212 intersect each other to define mask holes 220. For example, a plurality of first support bars 211 and a plurality of second support bars 212 may be provided, and the first support bars 211 and the second support bars 212 may define a plurality of mask holes 220 arranged in an array. For example, the plurality of mask holes 220 defined by the first support bars 211 and the second support bars 212 may have the same size and shape. For example, the mask holes 220 may expose pixel holes in the mask pattern structure 110.

[0109] Figure 9 for Figure 5 Schematic diagram of an orthographic projection P220 of the mask through hole 220 in the mask plate on the reference plane S and an orthographic projection P110 of the mask pattern structure 110 on the reference plane S.

[0110] refer to Figure 5 and Figure 9 , the orthographic projection P220 of the mask through hole 220 on the reference plane S perpendicular to the thickness direction Z overlaps with the orthographic projection P110 of the mask pattern structure 110 on the reference plane S. For example, one mask through hole 220 can correspond to one mask pattern structure 110, so that the first support bars 211 and the second support bars 212 can better provide support to the mask bars 100 and prevent deformation of each mask pattern structure 110. Moreover, by providing the first support bars 211 and the second support bars 212, the structure of the mask layer 200 can be further stabilized, preventing deformation of the mask through holes 220. For example, multiple mask through holes 220 can correspond one-to-one to multiple display panels.

[0111] For example, the orthographic projection of the mask pattern structure on the reference plane may fall within the orthographic projection of the mask through hole on the reference plane perpendicular to the thickness direction. For example, the overall shape of the orthographic projection of the mask pattern structure on the reference plane may match the shape of the orthographic projection of the mask through hole on the reference plane perpendicular to the thickness direction, such as both being rectangular.

[0112] For example, a plurality of mask strips may be provided, with the plurality of mask strips arranged along the second direction. For example, the plurality of mask strips may have the same size (e.g., width) in the second direction. For example, a column of mask holes arranged along the first direction corresponds to one mask strip.

[0113] For example, the auxiliary mask layer may be made of a metal material with a relatively low thermal expansion coefficient, such as nickel-iron alloy or nickel-cobalt alloy. For example, the auxiliary mask layer may be prepared by wet etching, electrochemical deposition, or laser processing.

[0114] refer to Figure 5 、 Figure 8A and Figure 8BIn some examples, at least one mask through hole 220 includes a first mask opening 220a and a second mask opening 220b that are disposed opposite each other in the thickness direction Z, and the first mask opening 220a and the support surface 212a are located in the same plane. For example, the first mask opening 220a is closer to the mask strip 100 than the second mask opening 220b. For example, the first mask opening 220a and the second mask opening 220b are both two-dimensional patterns.

[0115] refer to Figure 5 、 Figure 8A and Figure 8B In at least one of the first direction Y and the second direction X, the size of the second mask opening 220b is smaller than the size of the first mask opening 220a. For example, in the first direction Y, the size D02 of the second mask opening 220b can be smaller than the size D01 of the first mask opening 220a. For example, in the second direction X, the size D20 of the second mask opening 220b can be smaller than the size D10 of the first mask opening 220a. For example, the size of the second mask opening 220b can be smaller than the size of the first mask opening 220a in both the first direction Y and the second direction X.

[0116] refer to Figure 8A and Figure 9 The orthographic projection P220a of the first mask opening 220a on the reference plane S includes a first outer contour C1, the orthographic projection P220b of the second mask opening 220b on the reference plane S includes a second outer contour C2, and the orthographic projection of the mask pattern structure 110 on the reference plane S includes a third outer contour C3. The range enclosed by the third outer contour C3 is within the range enclosed by the first outer contour C1. Thus, the mask pattern structure 110 and the second mask opening 220b limit the evaporation range of the evaporation material.

[0117] refer to Figure 8A and Figure 9 The range enclosed by the second outer contour C2 does not exceed the range enclosed by the third outer contour C3, thereby improving evaporation efficiency. For example, the range enclosed by the second outer contour C2 can be located within the range enclosed by the third outer contour C3. However, the present invention is not limited to this. For example, the third outer contour can completely overlap with the second outer contour.

[0118] refer to Figure 5 、 Figure 8A and Figure 8BAs the mask strip 100 is aligned with the deposition substrate under the influence of a magnetic field, it will expand laterally (e.g., in the second direction X). By making the first mask opening 220a larger, the mask pattern structure 110 and the support structure 210 will not come into direct contact, thus preventing excessive contact between the two and negatively impacting the mask pattern structure 110. For example, when the mask strip 100 expands laterally due to magnetic attraction, it has a certain amount of free space for expansion without being obstructed. As a result, the mask strip 100 will not form wrinkles in locations where obstruction might occur, ensuring that the mask strip 100 and the deposition substrate are well aligned and free of gaps.

[0119] refer to Figure 5 、 Figure 8A and Figure 8B In addition, in at least one of the first direction Y and the second direction X, the size of the second mask opening 220b is set to be smaller than the size of the first mask opening 220a, which can reduce the weight of the portion of the auxiliary mask layer 200 close to the mask pattern structure 110, thereby reducing the influence of the auxiliary mask layer 200 on the mask pattern structure 110 under the action of the magnetic field.

[0120] refer to Figure 5 、 Figure 8A and Figure 8B In some examples, the through-mask hole 220 includes a first sub-mask hole 221 and a second sub-mask hole 222 that are connected to each other in the thickness direction Z. The first sub-mask hole 221 includes a first mask opening 220a, and the second sub-mask hole 222 includes a second mask opening 220b. The second mask opening 220b is located on a side of the second sub-mask hole 222 away from the first sub-mask hole 221. For example, the through-mask hole 220 has a nested hole structure, so that the first mask opening 220a and the second mask opening 220b of the through-mask hole 220 can have different sizes.

[0121] refer to Figure 8A and Figure 8B In the thickness direction Z, the ratio of the dimension H1 of the first sub-mask hole 221 to the dimension T6 of the support structure 210 is 0.2-0.6. For example, the dimension H1 of the first sub-mask hole 221 in the thickness direction Z can be the dimension of the portion where the thickness of the auxiliary mask layer 200 is thinned. This can reduce the magnetic influence of the auxiliary mask layer 200 on the mask pattern structure 110 in the mask strip 100 in a magnetic field, thereby improving the evaporation shadow effect.

[0122] For example, in the thickness direction, the ratio of the size of the first sub-mask hole to the size of the support structure may be 0.2-0.5. For example, in the thickness direction, the ratio of the size of the first sub-mask hole to the size of the support structure may be 0.3-0.4.

[0123] refer to Figure 8A and Figure 8B For example, the wall of the first sub-mask hole 221 and the wall of the second sub-mask hole 222 are connected by a first blocking surface A1. For example, the first blocking surface A1 can be a plane. For example, the orthographic projection of the first blocking surface on a reference plane S perpendicular to the thickness direction Z can be annular. For example, the dimension between the first blocking surface and the support surface 212a in the thickness direction Z can be the dimension of the first sub-mask hole 221 in the thickness direction Z.

[0124] Figure 10 for Figure 5 The cross-sectional view of the mask plate shown is taken along line AA'. Figure 10 The schematic diagram shows the support surface and the raised surface abutting against each other. However, the present invention is not limited to this. After the mask plate is assembled and not placed in a magnetic field, a gap may exist between the support surface and the raised surface. For example, the mask strips and auxiliary mask layer may deform under the influence of a magnetic field, causing the support surface and the raised surface to abut against each other.

[0125] refer to Figure 8A 、 Figure 8B and Figure 10 In some examples, a dimension W3 of the support surface 212a in the first direction Y is smaller than a dimension W1 of the portion of the raised surface 121 located between two adjacent mask pattern structures 110 in the first direction Y. Thus, the support surface 212a can stably support the raised surface 121 while also helping to reduce the magnetic influence of the support structure 200 on the mask pattern structure 110.

[0126] refer to Figure 8A and Figure 8B In some examples, the auxiliary mask layer 200 includes a mask region 201 and an edge region 202 surrounding the mask region 201. The mask through hole 220 is located in the mask region 201, and the edge region 202 is provided with a stress-balancing structure 230. A dimension of at least a portion of the stress-balancing structure 230 in the thickness direction Z (such as the depth of the auxiliary groove 231 in the thickness direction Z in the embodiment described later, such as the dimension H2 of the first sub-auxiliary hole 2321 in the thickness direction Z in the embodiment described later) is smaller than a dimension T6 of the support structure 210 in the thickness direction Z.

[0127] refer to Figure 8A and Figure 8BThe stress balancing structure 230 is a structure that stabilizes the stress generated within the auxiliary mask layer 200. Providing the stress balancing structure 230 helps maintain the overall structural stability of the auxiliary mask layer 200. Stress is concentrated in the edge region 202 of the auxiliary mask layer 200. Providing the stress balancing structure 230 in the edge region 202 surrounding the mask region 201 helps disperse the concentrated stress and prevent deformation of the mask vias 220 in the mask region 201.

[0128] refer to Figure 8A and Figure 8B In some examples, the stress-balancing structure 230 includes an auxiliary groove 231, which includes a groove opening 2311 and a bottom wall 2312 disposed opposite each other in the thickness direction Z. The groove opening 2311 is closer to the mask strip 100 than the bottom wall 2312. For example, the bottom wall 2312 can be used to shield the evaporated material. Thus, the thinned portion of the auxiliary groove 231 can be used to disperse stress, achieving stress balance across the auxiliary mask layer 200.

[0129] refer to Figure 8A and Figure 8B In some examples, the auxiliary groove 231 is located on at least one side of the mask region 201 in the first direction Y. For example, the auxiliary groove 231 can be located on both sides of the mask region 201 in the first direction Y. For example, the auxiliary groove can be located on one side of the mask region in the first direction, and the present invention is not limited to this. Since the mask strip 100 extends along the first direction Y, by providing the auxiliary groove 231 in the first direction Y of the mask region 201, the bottom wall 2312 can be used to shield the auxiliary material without the need for additional shielding strips, making production more convenient and facilitating the assembly of the mask strip 100, the auxiliary mask layer 200, and the fixing frame 300 in the embodiments described below.

[0130] For example, the auxiliary groove includes a side wall connected between the groove opening and the bottom wall. The side wall can be perpendicular to the bottom wall or have an angle other than 90° with the bottom wall. For example, the side wall can also be stepped. The present invention is not limited to this.

[0131] For example, in the first direction, the size of the groove opening can be smaller than the size of the first mask opening. For example, in the second direction, the size of the groove opening can be equal to the size of the first mask opening. However, the present invention is not limited to this. Depending on different product requirements, the size of the groove opening in the first direction can also be greater than or equal to the size of the first mask opening, and the size of the groove opening in the second direction can also be smaller than or greater than the size of the first mask opening.

[0132] refer to Figure 8A and Figure 8BIn some examples, the ratio of the depth of the auxiliary groove 231 to the dimension T6 of the support structure 210 in the thickness direction Z is 0.2-0.6. For example, the depth of the auxiliary groove 231 can be the dimension of the portion where the thickness of the auxiliary mask layer 200 is thinned. For example, the depth of the auxiliary groove 231 in the thickness direction Z can be the same as the dimension H1 of the first sub-mask hole 221, which helps to make the force on the support structure 210 between the through-mask hole 220 and the auxiliary groove 231 more uniform, thereby preventing deformation of the through-mask hole 220.

[0133] For example, in the thickness direction, the ratio of the depth of the auxiliary groove to the size of the support structure may be 0.2-0.5. For example, in the thickness direction, the ratio of the depth of the auxiliary groove to the size of the support structure may be 0.3-0.4.

[0134] refer to Figure 8A and Figure 8B In some examples, the stress-balancing structure 230 includes an auxiliary through-hole 232. The auxiliary through-hole 232 includes a first auxiliary opening 232a and a second auxiliary opening 232b that are oppositely disposed in the thickness direction Z. The second auxiliary opening 232b and the second mask opening 220b are located in the same plane. In at least one of the first direction Y and the second direction X, the size of the second auxiliary opening 232b is smaller than the size of the first auxiliary opening 232a. For example, in the first direction Y, the size D21 of the second auxiliary opening 232b can be smaller than the size D11 of the first auxiliary opening 232a. For example, in the second direction X, the size D22 of the second auxiliary opening 232b can be smaller than the size D12 of the first auxiliary opening 232a. For example, the size of the second auxiliary opening 232b can be smaller than the size of the first auxiliary opening 232a in both the first direction Y and the second direction X.

[0135] refer to Figure 8A and Figure 8B By setting the stress balancing structure 230 as the auxiliary through hole 232 of the through hole structure, the stress can be better dispersed, and it is beneficial to make the support structure 210 located between the mask through hole 220 and the auxiliary through hole 232 more uniformly stressed, thereby preventing the mask through hole 220 from deforming.

[0136] For example, in the first direction, the size of the first auxiliary opening can be equal to the size of the first mask opening, and the size of the second auxiliary opening can be equal to the size of the second mask opening. For example, in the second direction, the size of the first auxiliary opening can be smaller than the size of the first mask opening, and the size of the second auxiliary opening can be smaller than the size of the second mask opening. However, the present invention is not limited to this. Depending on different product requirements, in the first direction, the size of the first auxiliary opening can also be larger or smaller than the size of the first mask opening, and the size of the second auxiliary opening can also be larger or smaller than the size of the second mask opening. In the second direction, the size of the first auxiliary opening can also be equal to or larger than the size of the first mask opening, and the size of the second auxiliary opening can also be equal to or larger than the size of the second mask opening.

[0137] refer to Figure 5 、 Figure 8A and Figure 8B In some examples, the mask plate further includes a shielding strip 400, which is configured to shield the opening of the auxiliary through-hole 232. Thus, the shielding strip can shield the evaporation material. For example, the shielding strip 400 is configured to shield at least the second auxiliary opening 232b of the auxiliary through-hole 232, so that the second auxiliary opening 232b and the shielding strip together limit the evaporation range of the evaporation material. For example, the shielding strip 400 can extend along the first direction Y.

[0138] refer to Figure 5 、 Figure 8A and Figure 8B For example, the dimension of the shielding strip 400 in the second direction X can be smaller than the dimension D12 of the first auxiliary opening 232a in the second direction X to prevent excessive contact between the shielding strip 400 and the auxiliary mask layer 200 during the evaporation process, thereby improving the overall stability of the auxiliary mask layer 200.

[0139] refer to Figure 5 、 Figure 8A and Figure 8B In some examples, the auxiliary through-holes 232 are located on at least one side of the mask region 201 in the second direction X. For example, the auxiliary through-holes 232 can be located on both sides of the mask region 201 in the second direction X. For example, the auxiliary through-holes can be located on one side of the mask region in the second direction, which is not a limitation of the present invention. This allows the support structure 210 located between the mask through-holes 220 and the auxiliary through-holes 232 to be subjected to a more uniform force. Furthermore, since the mask strips 100 extend along the first direction Y, no interference occurs between the shielding strips 400 and the mask strips 100 during the assembly of the mask plate.

[0140] refer to Figure 8A and Figure 8BIn some examples, the auxiliary through-hole 232 includes a first sub-auxiliary hole 2321 and a second sub-auxiliary hole 2322 that communicate with each other in the thickness direction Z. The first sub-auxiliary hole 2321 includes a first auxiliary opening 232a, and the second sub-auxiliary hole 2322 includes a second auxiliary opening 232b. The second auxiliary opening 232b is located on a side of the second sub-auxiliary hole 2322 away from the first sub-auxiliary hole 2321. For example, the auxiliary through-hole 232 has a sleeve structure, so that the first auxiliary opening 232a and the second auxiliary opening 232b of the auxiliary through-hole 232 can have different sizes.

[0141] refer to Figure 8A and Figure 8B In the thickness direction Z, the ratio of the dimension H2 of the first sub-auxiliary hole 2321 to the thickness of the support structure 210 is 0.2-0.6. For example, the dimension H2 of the first sub-auxiliary hole 2321 in the thickness direction Z can be the dimension of the portion where the thickness of the auxiliary mask layer 200 is thinned. For example, in the thickness direction Z, the dimension H2 of the first sub-auxiliary hole 2321 can be equal to the dimension H1 of the first sub-mask hole 221, so that the force applied to the support structure 210 is more balanced and less prone to deformation.

[0142] refer to Figure 8A and Figure 8B In some examples, the dimension T6 of the support structure 210 in the thickness direction Z is 50 μm to 100 μm, so as to stably support the mask strip 100 during the evaporation process. For example, the dimension of the support structure in the thickness direction can be 50 μm to 90 μm. For example, the dimension of the support structure in the thickness direction can be 60 μm to 80 μm. For example, the dimension of the support structure in the thickness direction can be 70 μm to 75 μm.

[0143] Figure 11A for Figure 5 A schematic plan view of the fixing frame 300 in the mask is shown. Figure 11B for Figure 11A A schematic cross-sectional view of the fixing frame 300 is shown.

[0144] refer to Figure 5 、 Figure 8A 、 Figure 11A and Figure 11BIn some examples, the auxiliary mask layer 200 includes a mask region 201, and the mask through hole 220 is located in the mask region 201. The mask plate further includes a fixing frame 300, which includes a connecting portion 310 and a peripheral portion 320 surrounding the connecting portion 310. The connecting portion 310 is configured to at least surround the mask region 201. The connecting portion 310 defines a connecting groove 311, and at least a portion of the support structure 210 extends into the connecting groove 311 and is fixedly connected to the connecting groove 311, so that the support structure 210 is fixedly connected to the fixing frame 300.

[0145] refer to Figure 5 、 Figure 8A 、 Figure 11A and Figure 11B , the depth H3 of the connecting groove 311 in the thickness direction Z is not less than the dimension T6 of the support structure 210 in the thickness direction Z. Thus, the supporting surface 212a of the support structure 210 does not protrude from the surface of the connecting portion 310. For example, the depth H3 of the connecting groove 311 in the thickness direction Z can be equal to the dimension T6 of the support structure 210 in the thickness direction Z. For example, the minimum depth of the connecting groove in the thickness direction can be greater than the maximum dimension of the support structure in the thickness direction.

[0146] refer to Figure 5 、 Figure 8A 、 Figure 11A and Figure 11B For example, the connection portion 310 may be fixedly connected to the mounting surface 131 of the mask strip 100. For example, the connection portion 310 may be welded to the mounting surface 131.

[0147] Figure 12 For the general Figure 8A The auxiliary mask layer 200 and Figure 11A FIG. 3 is a schematic diagram showing the fixing frame 300 being assembled. Figure 13 For the general Figure 6A The mask strip 100 shown, Figure 8A The auxiliary mask layer 200, Figure 11A Schematic diagram showing the fixing frame 300 and the shielding strip 400 assembled together. Figure 14 for Figure 5 The cross-sectional view of the mask plate shown is taken along line BB'.

[0148] refer to Figures 12 to 14 , the auxiliary mask layer 200 and the fixing frame 300 can be fixed together first, and then the mask strip 100 and the shielding strip 400 are fixed to the fixing frame 300 respectively, and the assembly is as follows Figure 5 For example, refer to Figure 13, a mask strip 100 may be welded to the middle of the fixing frame 300 first, and then the other mask strips may be welded to the fixing frame 300 in sequence from the middle to both sides. Figure 13 The schematic diagram shows that a shielding strip 400 is welded on the fixed frame 300, but the present invention is not limited thereto. For example, two shielding strips 400 can be welded on both sides of the fixed frame 300 along the second direction X to form a shielding strip 400. Figure 5 The mask shown.

[0149] Figure 15 A schematic diagram of a sub-pixel of a display panel provided by at least one embodiment of the present invention. Figure 15 The arrangement of sub-pixels is schematically shown, but the present invention is not limited thereto.

[0150] refer to Figure 15 and Figure 5 At least one embodiment of the present invention provides a display panel including a plurality of sub-pixels 500, wherein the plurality of sub-pixels 500 are formed using the mask pattern structure 110 of the mask plate 100 described above. For example, the sub-pixels 500 may include a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B.

[0151] Since the sub-pixels in the display panel according to the embodiment of the present invention are formed by using the mask pattern structure of the above-mentioned mask plate, they also have corresponding beneficial technical effects, which will not be described in detail here.

[0152] There are a few points to note:

[0153] (1) The drawings of the embodiments of the present invention only relate to the structures related to the embodiments of the present invention. Other structures may refer to conventional designs.

[0154] (2) Unless there is a conflict, the features of the same embodiment and different embodiments of the present invention may be combined with each other.

[0155] The above description is merely an exemplary embodiment of the present invention and is not intended to limit the scope of protection of the present invention. The scope of protection of the present invention is determined by the appended claims.

Claims

1. A mask plate, characterized in that: include: mask strips; The mask strip extends along a first direction and includes at least two mask pattern structures, and the at least two mask pattern structures are arranged along the first direction; The mask strip includes a first surface and a second surface arranged opposite to each other in a thickness direction, and the thickness direction intersects with the first direction; The mask strip also includes a protruding structure, at least a portion of which is located between two adjacent mask pattern structures; the second surface includes a mask surface of the mask pattern structure and a protruding surface of the protruding structure, the protruding surface is further away from the first surface than the mask surface, and in the thickness direction, the size of the protruding structure is larger than the size of the mask pattern structure.

2. The mask according to claim 1, wherein: The mask strip further includes a mounting structure, wherein the mounting structure is located on at least one side of the at least two mask pattern structures in the first direction; The second surface further includes a mounting surface of a mounting structure, the mounting surface being further away from the first surface than the mask surface, and a size of the mounting structure in the thickness direction is not smaller than a size of the protruding structure.

3. The mask according to claim 2, wherein: The mask strip further includes a connecting structure, and the second surface further includes a first connecting surface of the connecting structure, wherein the first connecting surface is connected between the mask surface and the mounting surface; In the thickness direction, the size of the connecting structure is not smaller than the size of the mask pattern structure and not larger than the size of the mounting structure, and the size of the connecting structure gradually increases along the direction from the mask surface to the mounting surface; the direction from the mask surface to the mounting surface is parallel to the first direction.

4. The mask according to claim 2, wherein: The first surface is located in a plane, and in the thickness direction, the size of the mounting structure is 10 micrometers to 30 micrometers.

5. The mask according to any one of claims 1 to 4, characterized in that: The second surface further includes a second connecting surface of the protruding structure, wherein the second connecting surface is connected between the mask surface and the protruding surface; In the thickness direction, the distance between the second connecting surface and a reference surface perpendicular to the thickness direction is not less than the distance between the mask surface and the reference surface, and is not greater than the distance between the raised surface and the reference surface, and the distance between the second connecting surface and the reference surface gradually increases along the direction from the mask surface to the raised surface; the direction from the mask surface to the raised surface is parallel to the first direction.

6. The mask according to any one of claims 1 to 3, characterized in that: The first surface is located in a plane. In the thickness direction, the size of the protruding structure is 3 micrometers to 30 micrometers, and the size of the mask pattern structure is 1 micrometer to 15 micrometers.

7. The mask according to any one of claims 1 to 4, characterized in that: A size of the mask pattern structure in the first direction is larger than a size of a portion of the convex surface located between the two adjacent mask pattern structures in the first direction.

8. The mask according to any one of claims 1 to 4, characterized in that: The protrusion structure surrounds at least a portion of the mask pattern structure.

9. The mask according to any one of claims 1 to 4, characterized in that: A portion of the convex surface located between two adjacent mask pattern structures extends along a second direction, and the second direction intersects the first direction and the thickness direction respectively.

10. The mask according to any one of claims 1 to 4, characterized in that: Also included is an auxiliary mask layer; The auxiliary mask layer includes a support structure, the support structure including a first support bar extending along the first direction and a second support bar extending along a second direction, the second direction intersecting the first direction and the thickness direction respectively; the second support bar includes a support surface, the support surface is located on a side of the support structure close to the mask bar, and the orthographic projection of the raised surface on the auxiliary mask layer overlaps with the support surface; The first support bars and the second support bars intersect each other to define mask through holes; An orthographic projection of the mask through hole on a reference plane perpendicular to the thickness direction overlaps with an orthographic projection of the mask pattern structure on the reference plane.

11. The mask according to claim 10, wherein: At least one mask through hole includes a first mask opening and a second mask opening disposed opposite to each other in the thickness direction, and the first mask opening and the support surface are located in the same plane; In at least one of the first direction and the second direction, the size of the second mask opening is smaller than the size of the first mask opening; The orthographic projection of the first mask opening on the reference plane includes a first outer contour, the orthographic projection of the second mask opening on the reference plane includes a second outer contour, and the orthographic projection of the mask pattern structure on the reference plane includes a third outer contour; The range surrounded by the third outer contour is within the range surrounded by the first outer contour, and the range surrounded by the second outer contour does not exceed the range surrounded by the third outer contour.

12. The mask according to claim 11, wherein: The mask through hole includes a first sub-mask hole and a second sub-mask hole connected to each other in the thickness direction, the first sub-mask hole includes the first mask opening, the second sub-mask hole includes the second mask opening, and the second mask opening is located on a side of the second sub-mask hole away from the first sub-mask hole; In the thickness direction, the ratio of the size of the first sub-mask hole to the size of the support structure is 0.2-0.

6.

13. The mask according to claim 10, wherein: A size of the support surface in the first direction is smaller than a size of a portion of the protruding surface located between the two adjacent mask pattern structures in the first direction.

14. The mask according to claim 11, wherein: The auxiliary mask layer includes a mask area and an edge area surrounding the mask area, the mask through hole is located in the mask area, and the edge area is provided with a stress balancing structure; A dimension of at least a portion of the stress-balancing structure in the thickness direction is smaller than a dimension of the supporting structure in the thickness direction.

15. The mask according to claim 14, wherein: The stress balancing structure includes an auxiliary groove, and the auxiliary groove includes a groove opening and a bottom wall that are oppositely arranged in the thickness direction; the groove opening is closer to the mask strip than the bottom wall.

16. The mask according to claim 15, characterized in that: The auxiliary groove is located on at least one side of the mask region in the first direction.

17. The mask according to claim 15, wherein: In the thickness direction, the ratio of the depth of the auxiliary groove to the size of the support structure is 0.2-0.

6.

18. The mask according to claim 14, wherein: The stress balancing structure includes an auxiliary through hole, the auxiliary through hole includes a first auxiliary opening and a second auxiliary opening arranged opposite to each other in the thickness direction, and the second auxiliary opening and the second mask opening are located in the same plane; In at least one of the first direction and the second direction, a size of the second auxiliary opening is smaller than a size of the first auxiliary opening.

19. The mask according to claim 18, wherein: A shielding bar is also included, and the shielding bar is configured to shield the opening of the auxiliary through hole.

20. The mask according to claim 18, wherein: The auxiliary through hole is located on at least one side of the mask region in the second direction.

21. The mask according to claim 18, wherein: The auxiliary through hole includes a first sub-auxiliary hole and a second sub-auxiliary hole that are connected to each other in the thickness direction, the first sub-auxiliary hole includes the first auxiliary opening, the second sub-auxiliary hole includes the second auxiliary opening, and the second auxiliary opening is located on a side of the second sub-auxiliary hole away from the first sub-auxiliary hole; In the thickness direction, the ratio of the size of the first sub-auxiliary hole to the thickness of the support structure is 0.2-0.

6.

22. The mask according to claim 10, wherein: The support structure has a size in the thickness direction of 50 μm to 100 μm.

23. The mask according to claim 10, wherein: The auxiliary mask layer includes a mask area, and the mask through hole is located in the mask area; The mask plate further includes a fixing frame, the fixing frame including a connecting portion and a peripheral portion surrounding the connecting portion, the connecting portion being configured to surround at least the mask area; The connecting portion is provided with a connecting groove, and at least a portion of the supporting structure extends into the connecting groove and is fixedly connected to the connecting groove; the depth of the connecting groove in the thickness direction is not less than the size of the supporting structure in the thickness direction.

24. A display panel, characterized in that: The invention comprises a plurality of sub-pixels, wherein the plurality of sub-pixels are formed by using the mask pattern structure of the mask plate according to any one of claims 1 to 23.

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