Substrate processing device and substrate temperature measuring assembly

Abstract

The utility model relates to a substrate processing device and a substrate temperature measurement assembly. The substrate temperature measurement assembly comprises a to-be-measured piece and a temperature measurement device. The to-be-tested piece is used for being placed on a supporting seat of the substrate processing device, and the to-be-tested piece comprises a substrate simulation piece and a radiation layer arranged on the surface of the substrate simulation piece. The temperature measuring device comprises at least one infrared thermometer and is used for acquiring the temperature of a plurality of different positions of the radiation layer. Temperature measurement processing is carried out on the to-be-measured piece through the temperature measurement device, and according to the temperatures of multiple different positions of the to-be-measured piece, the temperatures can be used as a basis for determining whether the temperatures of all parts of the surface of the substrate are uniform or not. Therefore, whether the temperature of the surface of the substrate is uniform or not can be automatically detected in real time without opening the cavity, so that the production efficiency is improved; besides, the radiation layer has high thermal radiation capability, so that the infrared thermometer can accurately sense the temperature of each detection point, the temperature measurement precision is high, and the film deposition quality of the substrate can be further improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a substrate processing device and a substrate temperature measurement component. Background Art

[0002] With the rapid development of semiconductor technology, semiconductor thin film technology has also developed rapidly, and thin film deposition techniques using chemical vapor deposition (CVD) and physical vapor deposition (PVD) have emerged. Chemical vapor deposition is a chemical process that primarily uses one or more vapor-phase compounds or elements containing the thin film element to chemically react on the substrate surface to form a thin film. Physical vapor deposition refers to the process of using physical methods to vaporize the surface of a material source (solid or liquid) into gaseous atoms or molecules, or partially ionize it into ions, under vacuum conditions. This process then uses a low-pressure gas (or plasma) process to deposit a thin film with a specific functional property on the substrate surface. Physical vapor deposition is one of the main surface treatment technologies and can be categorized by process type, including vacuum evaporation, vacuum sputtering, and vacuum ion plating.

[0003] With the development of the semiconductor industry, both chemical vapor deposition and physical vapor deposition processes deposit thin films on substrates (such as wafers) in high-temperature environments. To ensure the quality of thin film deposition on the substrate surface, frequent chamber opening operations are typically required during the manufacturing process. A temperature calibrator (TC wafer) is then used to measure the temperature distribution of the heater and other pedestals. Based on the temperature measurement results, the temperature of various parts of the pedestal is adaptively adjusted to ensure uniform temperature across the substrate surface, thereby improving the quality of thin film deposition. However, these complex process operations reduce substrate production efficiency. Utility Model Content

[0004] Based on this, it is necessary to overcome the defects of the prior art and provide a substrate processing device and a substrate temperature measuring component, which can improve the production efficiency of the substrate while ensuring the quality of thin film deposition on the substrate.

[0005] A substrate temperature measurement component, comprising:

[0006] A piece to be tested, the piece to be tested is used to be placed on a support base of a substrate processing device, the piece to be tested includes a substrate dummy and a radiation layer provided on a surface of the substrate dummy; and

[0007] A temperature measuring device, comprising at least one infrared thermometer, is disposed relative to the object to be measured and is used to obtain temperatures at multiple different positions of the radiation layer.

[0008] In one embodiment, the radiation layer is sprayed, printed, electroplated, 3D printed, bonded, welded or clamped onto the surface of the substrate simulation part.

[0009] In one embodiment, the radiation layer is made of a high temperature resistant material; and / or the radiation layer is made of a blackbody-like material.

[0010] In one embodiment, there is one infrared thermometer; or, there are multiple infrared thermometers, and all of the infrared thermometers are arranged in sequence and spaced apart around the central axis of the substrate simulation component.

[0011] In one embodiment, the number of the infrared thermometers is set to 2 to 6; and / or, all the infrared thermometers are arranged at equal intervals around the central axis of the substrate simulation part.

[0012] A substrate processing device includes the substrate temperature measurement component, a reaction chamber and a support seat; the support seat is arranged inside the reaction chamber, the support seat is used to support the piece to be measured, and the support seat is provided with a heater.

[0013] In one embodiment, the temperature measuring device is disposed inside the reaction chamber and connected to the inner wall of the reaction chamber; alternatively, the temperature measuring device is disposed outside the reaction chamber and connected to the outer wall of the reaction chamber.

[0014] In one embodiment, the infrared thermometer is provided as one, and the infrared thermometer can be rotatably disposed on the reaction chamber around the circumference of the support seat.

[0015] In one embodiment, the infrared thermometer is provided as one, and the substrate processing device further includes a rotation drive mechanism, which is connected to the support base and is used to drive the support base to rotate around its central axis.

[0016] In one embodiment, the substrate processing device further includes a display screen, which is electrically connected to the temperature measuring device, and is used to display the temperature at different positions of the radiation layer.

[0017] The above-mentioned substrate processing device and substrate temperature measurement component, in the process technology, specifically for testing the uniformity of the substrate surface temperature at different processing stages, is used to transfer the test piece to the interior of the reaction chamber of the substrate processing device and place it on the support seat, replacing the substrate originally placed on the support seat. The support seat heats the test piece, and at the same time, the temperature of the test piece is measured by the temperature measuring device. Based on the temperature at multiple different positions of the test piece, it can be used as a basis for whether the temperature of various parts of the substrate surface is uniform. It can be seen that without the need for chamber operation, it is possible to automatically detect whether the temperature of the substrate surface is uniform in real time, thereby greatly improving the production efficiency of the substrate. In addition, the radiation layer has a high thermal radiation capacity and can radiate the absorbed heat outward, so that the infrared thermometer can accurately sense the temperature at each detection point, with high temperature measurement accuracy, which can further improve the thin film deposition quality of the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a structural diagram of a substrate processing device according to an embodiment of the present application.

[0019] Figure 2 This is a structural diagram of a substrate processing device according to another embodiment of the present application.

[0020] Figure 3 FIG. 1 is a structural diagram of a device under test according to an embodiment of the present application.

[0021] Figure 4 This is a diagram showing the distribution structure of multiple detection points on the radiation layer according to an embodiment of the present application.

[0022] 10. Detection piece; 11. Substrate simulation piece; 12. Radiation layer; 121. Detection point; 20. Temperature measuring device; 21. Infrared thermometer; 30. Support base; 40. Reaction chamber; 41. Protective cover. DETAILED DESCRIPTION

[0023] To make the above-mentioned objects, features, and advantages of the present application more clearly understood, the specific embodiments of the present application are described in detail below with reference to the accompanying drawings. The following description sets forth many specific details to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways than those described herein, and those skilled in the art can make similar improvements without violating the scope of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0024] It should be noted that the substrate in this embodiment can be a semiconductor wafer at any stage in the process of forming semiconductor components, such as integrated circuits or discrete devices, on the substrate. In one embodiment, the substrate comprises a very low-k dielectric layer and a metal layer on the semiconductor substrate. The substrate can be a photomask, a semiconductor wafer, or other workpiece known to those skilled in the art of electronic component manufacturing. In at least some embodiments, the substrate comprises any material used to manufacture any integrated circuit, passive (e.g., capacitors, inductors), and active (e.g., transistors, photodetectors, lasers, diodes) microelectronic components. The substrate can comprise an insulating material (e.g., a dielectric material) that separates such active and passive microelectronic components from one or more conductive layers formed atop them. In one embodiment, the substrate is a semiconductor substrate comprising one or more dielectric layers, such as silicon, gallium nitride, gallium arsenide, silicon dioxide, silicon nitride, sapphire, and other dielectric materials. In one embodiment, the substrate is a wafer stack comprising one or more layers. The one or more layers of the wafer may include conductive layers, semiconducting layers, insulating layers, or any combination thereof.

[0025] It should be noted that the infrared thermometer in this embodiment works based on the principle that when an object's temperature is above absolute zero, it radiates infrared radiation. The infrared thermometer calculates the object's temperature by measuring this radiation. This principle is based on the Stefan-Boltzmann theorem, which states that by measuring the infrared radiation energy emitted by an object, the object's temperature can be calculated.

[0026] As described in the background art, the process operations in the related art are relatively complicated, resulting in a problem of reduced substrate production efficiency. The inventors have discovered that the reason for this problem is that during the substrate manufacturing process, chamber opening operations are frequently required, and then the temperature distribution on the base surface is repeatedly measured multiple times using a temperature calibrator (TC wafer), resulting in low temperature measurement efficiency. This not only reduces the temperature regulation efficiency of various parts of the substrate, resulting in low film deposition quality, but also reduces substrate production efficiency.

[0027] Based on the above reasons, the present application provides a substrate processing device and a substrate temperature measurement component, which can improve the production efficiency of the substrate while ensuring the quality of thin film deposition on the substrate.

[0028] See Figure 1 and Figure 3 , Figure 1 1 shows a structural diagram of a substrate processing device according to an embodiment of the present application. Figure 3A structural diagram of a DUT 10 according to one embodiment of the present application is shown. One embodiment of the present application provides a substrate temperature measurement assembly, comprising: a DUT 10 and a temperature measuring device 20. The DUT 10 is intended to be placed on a support base 30 of a substrate processing apparatus. The DUT 10 comprises a substrate dummy 11 and a radiation layer 12 disposed on the surface of the substrate dummy 11. The temperature measuring device 20 comprises at least one infrared thermometer 21, which is positioned relative to the DUT 10 and is used to obtain temperatures at multiple different locations on the radiation layer 12.

[0029] The above-mentioned substrate temperature measurement assembly is used in the manufacturing process, specifically, when testing the uniformity of the substrate surface temperature at different processing stages, the workpiece 10 to be tested is transferred to the interior of the reaction chamber 40 of the substrate processing device and placed on the support base 30, replacing the substrate originally placed on the support base 30. The support base 30 heats the workpiece 10 to be tested, and the temperature measuring device 20 simultaneously measures the temperature of the workpiece 10 to be tested. The temperatures at multiple different positions of the workpiece 10 can be used as a basis for determining whether the temperature of various parts of the substrate surface is uniform. This shows that the uniformity of the substrate surface temperature can be automatically detected in real time without the need for chamber operation, greatly improving the production efficiency of the substrate. In addition, the radiation layer 12 has a high thermal radiation capacity and can radiate the absorbed heat outward, so that the infrared thermometer 21 can accurately sense the temperature at each detection point 121, with high temperature measurement accuracy, which can further improve the thin film deposition quality of the substrate.

[0030] The substrate dummy 11, serving as the primary structure of the device under test 10 and used to provide the radiation layer 12, may be, for example, identical or substantially identical in size and shape to the substrate. Furthermore, the material used for the substrate dummy 11 may be the same as that of the substrate, such as a silicon wafer. This allows the substrate dummy 11 to better simulate the thermal conditions of the substrate on the support 30, ensuring that the temperature at each location on the radiation layer 12 matches the temperature at each location on the substrate surface. Consequently, the temperatures sensed by the temperature measuring device 20 at each location on the radiation layer 12 can also represent the temperatures at each location on the substrate surface.

[0031] It should be noted that “substantially the same” in this embodiment does not mean “completely the same” in a strict mathematical sense. As long as they look the same to the naked eye, deviations within ±5% due to processing technology are allowed.

[0032] In some embodiments, the radiation layer 12 can be connected to the surface of the substrate simulator 11 in various ways. For example, the radiation layer 12 is set on the surface of the substrate simulator 11 by spraying, and specifically, it is a layer of paint sprayed on the surface of the substrate simulator 11. This can facilitate the processing and manufacturing of the test piece 10, and the thickness of the radiation layer 12 is relatively small, so that when actually heated, it is more in line with the temperature of the substrate surface, more realistically reflecting the temperature of different positions on the substrate surface, making the temperature measurement more accurate. Of course, as some optional solutions, the radiation layer 12 can also be set on the surface of the substrate simulator 11 by various methods such as printing, electroplating, 3D printing, bonding, welding or clamping. The specific method can be flexibly selected according to actual needs and is not limited here.

[0033] In one embodiment, the radiation layer 12 is made of, for example, a high-temperature resistant material, which is not easily deformed by heat, can be used for a long time, and makes temperature measurement more accurate. Another example is made of a blackbody-like material, which has a high heat radiation capacity, thereby improving temperature measurement accuracy. Another example is made of a high-temperature resistant blackbody material. Of course, other materials can also be selected according to actual needs.

[0034] In a specific embodiment, the radiation layer 12 includes but is not limited to being made of high-temperature resistant black paint, which can make temperature measurement more accurate and thus improve the quality of thin film deposition on the substrate.

[0035] A blackbody is an object that appears black because it neither reflects nor transmits light at a certain temperature. A blackbody absorbs light very strongly. Therefore, at a certain temperature, the heat generated by the absorbed light and the heat emitted by the object reach equilibrium. Therefore, the blackbody's radiative and absorptive capacities are equal, making it an ideal radiator. For example, in human body temperature measurement applications, an infrared temperature detection system using a blackbody can achieve a temperature measurement accuracy of ±0.3°C, while without a blackbody, the measurement accuracy might be ±1°C.

[0036] In related art, the surface of support base 30 is typically made of a smooth ceramic or metal. However, smooth ceramic or metal has a very low emissivity, making them unsuitable for temperature measurement using an infrared thermometer. Therefore, in this embodiment, the radiation layer 12 on the surface of substrate dummy 11 is made of a blackbody-like material. The infrared thermometer 21 senses the temperature of this blackbody-like material, achieving high measurement accuracy.

[0037] See also Figure 3 and Figure 4 , when the number of detection points 121 on the surface of the radiation layer 12 is greater, for example Figure 4As shown, multiple detection points 121 are arranged on the surface of the radiation layer 12 at equal or unequal intervals, which can achieve temperature detection at more locations on the surface of the radiation layer 12 and thus better analyze the temperature distribution on the surface of the radiation layer 12.

[0038] In this embodiment, an infrared thermometer 21 can be used to obtain the temperature at one detection point 121 on the radiation layer 12, or the temperature at multiple detection points 121, and can be flexibly adjusted and set according to actual needs.

[0039] In order to achieve more detection points 121 on the surface of the radiation layer 12, in some embodiments, only one infrared thermometer 21 is provided, and the infrared thermometer 21 is arranged relative to the position of the test object 10 to obtain the temperature of the detection points 121 at multiple different positions on the radiation layer 12; of course, the infrared thermometer 21 can also be provided in multiple locations, for example Figure 2 As shown, each infrared thermometer 21 is, for example, disposed relative to the object to be tested 10 , and is used to obtain the temperature of at least one detection point 121 on the radiation layer 12 .

[0040] See also Figure 2 In some embodiments, when there are multiple infrared thermometers 21, all infrared thermometers 21 are sequentially spaced around the central axis of the substrate simulation member 11. The central axis of the substrate simulation member 11 is the same as the central axis of the support base 30. Figure 2 As shown in Z. Thus, compared to a single infrared thermometer 21, having multiple infrared thermometers 21 allows for temperature measurements at more detection points 121 on the surface of the radiation layer 12. Furthermore, as the number of infrared thermometers 21 increases, the number of detection points 121 on the surface of the radiation layer 12 increases accordingly, enabling temperature measurements at more diverse areas on the surface of the radiation layer 12, thereby improving temperature measurement accuracy.

[0041] In one embodiment, the number of infrared thermometers 21 includes, but is not limited to, two to six, specifically, two, three, four, five, or six, with all infrared thermometers 21 being evenly spaced around the central axis of the substrate dummy 11. This arrangement not only increases the number of infrared thermometers 21, but also prevents an excessive number of infrared thermometers 21 from increasing costs.

[0042] See also Figure 1 、 Figure 3 and Figure 4In one embodiment, an embodiment of the present application provides a substrate processing device, which includes the substrate temperature measurement component of any of the above-mentioned embodiments, and also includes a reaction chamber 40 and a support base 30. The support base 30 is arranged inside the reaction chamber 40, and the support base 30 is used to support the piece to be tested 10. The support base 30 is provided with a heater. Specifically, during the process, the heater works to heat the substrate placed on the support base 30. In addition, the piece to be tested 10 is transferred to the inside of the reaction chamber 40 of the substrate processing device and placed on the support base 30, replacing the substrate originally placed on the support base 30. The support base 30 can also achieve heating treatment for the piece to be tested 10 placed thereon. Optionally, the heater includes but is not limited to being arranged below the support base 30 or inside the support base 30, as long as the heat is transferred to the placement position of the support base 30 during the heating operation.

[0043] In the above-mentioned substrate processing device, during the manufacturing process, for example, when detecting the uniformity of the substrate surface temperature at different processing stages, the test piece 10 is transferred to the interior of the reaction chamber 40 of the substrate processing device and placed on the support base 30, replacing the substrate originally placed on the support base 30. The support base 30 heats the test piece 10, and the temperature of the test piece 10 is simultaneously measured by the temperature measuring device 20. The temperatures at multiple different positions of the test piece 10 can be used as a basis for determining whether the temperatures of various parts of the substrate surface are uniform. This shows that the uniformity of the substrate surface temperature can be automatically detected in real time without the need for chamber operation, greatly improving the production efficiency of the substrate. In addition, the radiation layer 12 has a high thermal radiation capacity and can radiate the absorbed heat outward, so that the infrared thermometer 21 can accurately sense the temperature at each detection point 121, with high temperature measurement accuracy, which can further improve the thin film deposition quality of the substrate.

[0044] In some embodiments, the temperature measuring device 20 can be arranged outside the reaction chamber 40. For example, the reaction chamber 40 is provided with a transparent window, the infrared thermometer 21 is connected to the outer wall of the reaction chamber 40, and the infrared thermometer 21 is arranged corresponding to the transparent window. The detection signal of the infrared thermometer 21 passes through the transparent window to detect the temperature of the radiation layer 12 inside the reaction chamber 40. For another example, the reaction chamber 40 is provided with a detection hole, the infrared thermometer 21 is connected to the outer wall of the reaction chamber 40 and is corresponding to the detection hole. The detection signal of the infrared thermometer 21 passes through the detection hole to detect the temperature of the radiation layer 12 inside the reaction chamber 40. The temperature measuring device 20 can also be arranged inside the reaction chamber 40, for example, on the inner wall of the reaction chamber 40, and the detection signal is directly emitted to the radiation layer 12 to detect the temperature of the radiation layer 12. Compared with being arranged outside the reaction chamber 40, the temperature detection accuracy can be improved.

[0045] Specifically, when a protective cover 41 is disposed circumferentially around the support base 30 within the reaction chamber 40, the protective cover 41 is connected to the inner wall of the reaction chamber 40. To better detect the surface temperature of the radiation layer 12, the temperature measuring device 20 is connected to the inner wall of the protective cover 41, that is, indirectly disposed on the inner wall of the reaction chamber 40.

[0046] Specifically, when there are multiple infrared thermometers 21, all infrared thermometers 21 are connected to the inner wall of the reaction chamber 40 in sequence and at intervals around the central axis of the support base 30, and are specifically arranged above the support base 30. The infrared thermometers 21 located at different positions perform infrared detection on the different detection points 121 on the radiation layer 12, thereby obtaining the temperature at the different detection points 121 on the radiation layer 12.

[0047] In some embodiments, there are multiple detection points 121 on the surface of the radiation layer 12, such as Figure 4 As shown, the number of detection points 121 includes but is not limited to 10, 13, 15, 20, 25, 30, 35, 49, 55, 60, or 70, and can be flexibly adjusted and set according to actual needs. A greater number of detection points 121 enables temperature detection in more different regions on the surface of the radiation layer 12, thereby improving temperature detection accuracy and, in turn, improving the quality of thin film deposition on the substrate surface.

[0048] In one embodiment, a single infrared thermometer 21 is provided, and the infrared thermometer 21 is rotatably mounted on the reaction chamber 40 around the circumference of the support base 30. Thus, by installing a rotatable infrared thermometer 21 on the reaction chamber 40, the infrared thermometer 21 can rotate around the circumference of the support base 30 during the temperature measurement of the radiation layer 12 on the object to be measured 10, thereby enabling the temperature to be measured at more detection points 121 on the surface of the radiation layer 12, thereby better obtaining the temperature distribution on the surface of the radiation layer 12. Furthermore, only one infrared thermometer 21 is required, thereby reducing costs.

[0049] In one embodiment, a single infrared thermometer 21 is provided, and the substrate processing apparatus further includes a rotational drive mechanism. The rotational drive mechanism is connected to the support base 30 and is configured to drive the support base 30 to rotate about its central axis. In this manner, the rotational drive mechanism rotates the support base 30, which in turn rotates the test piece 10 placed thereon. This allows the use of a single infrared thermometer 21 to measure the temperature of more detection points 121 on the surface of the radiation layer 12, thereby better capturing the temperature distribution on the surface of the radiation layer 12.

[0050] In one embodiment, the substrate processing apparatus further includes a display screen. The display screen is electrically connected to the temperature measuring device 20 and is used to display the temperature at various locations on the radiation layer 12. This allows process personnel to promptly monitor the temperature distribution of the object under test 10 and adjust the substrate processing apparatus accordingly.

[0051] In one embodiment, the substrate processing apparatus further includes a controller and an alarm. The display screen, the alarm, and the temperature measuring device 20 are all electrically connected to the controller. The controller determines whether the temperature distribution uniformity of the radiation layer 12 meets the requirements based on the temperatures at various locations of the radiation layer 12 detected by the temperature measuring device 20. If the temperature distribution uniformity does not meet the requirements, the controller controls the alarm to generate an alarm.

[0052] In the description of this application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing this application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0053] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include at least one of such features. In the description of this application, if the term "plurality" appears, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0054] In this application, unless otherwise specified or limited, the terms "mounted," "connected," "connected," "fixed," etc., should be interpreted broadly. For example, these terms may refer to fixed connections, removable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediary; and internal communication between two components or interaction between two components, unless otherwise specified. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0055] In this application, unless otherwise expressly specified or limited, if a first feature is described as being "above" or "below" a second feature, or similar descriptions, this may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Furthermore, when a first feature is described as being "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is described as being "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0056] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only embodiment.

[0057] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0058] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A substrate temperature measurement component, characterized in that: The substrate temperature measurement component includes: A piece to be tested, the piece to be tested is used to be placed on a support base of a substrate processing device, the piece to be tested includes a substrate dummy and a radiation layer provided on a surface of the substrate dummy; and A temperature measuring device, comprising at least one infrared thermometer, is disposed relative to the object to be measured and is used to obtain temperatures at multiple different positions of the radiation layer.

2. The substrate temperature measurement assembly according to claim 1, characterized in that: The radiation layer is sprayed, printed, electroplated, 3D printed, bonded, welded or clamped onto the surface of the substrate simulation part.

3. The substrate temperature measurement assembly according to claim 1, wherein: The radiation layer is made of a high-temperature resistant material; and / or the radiation layer is made of a blackbody-like material.

4. The substrate temperature measurement assembly according to claim 1, wherein: There is one infrared thermometer; or, there are multiple infrared thermometers, all of which are arranged in sequence and spaced apart around the central axis of the substrate simulation component.

5. The substrate temperature measurement assembly according to claim 4, characterized in that: The number of the infrared thermometers is set to 2 to 6; and / or all the infrared thermometers are arranged at equal intervals around the central axis of the substrate simulation part.

6. A substrate processing device, characterized in that: The substrate processing device includes the substrate temperature measurement assembly according to any one of claims 1 to 5, and also includes a reaction chamber and a support seat; the support seat is arranged inside the reaction chamber, the support seat is used to support the test piece, and the support seat is provided with a heater.

7. The substrate processing apparatus according to claim 6, wherein: The temperature measuring device is arranged inside the reaction chamber and connected to the inner wall of the reaction chamber; or, the temperature measuring device is arranged outside the reaction chamber and connected to the outer wall of the reaction chamber.

8. The substrate processing apparatus according to claim 6, wherein: The infrared thermometer is provided as one, and the infrared thermometer can be rotatably arranged on the reaction chamber around the circumference of the support seat.

9. The substrate processing apparatus according to claim 6, wherein: The infrared thermometer is provided as one, and the substrate processing device further includes a rotation drive mechanism, which is connected to the support base and is used to drive the support base to rotate around its central axis.

10. The substrate processing apparatus according to claim 6, wherein: The substrate processing device further includes a display screen, which is electrically connected to the temperature measuring device and is used to display the temperature at different positions of the radiation layer.

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