High-temperature and high-vacuum reaction chamber device for chemical vapor deposition

Abstract

According to the chemical vapor deposition high-temperature and high-vacuum reaction chamber device, a reaction chamber is defined by a shell assembly, an upper sealing cover and a lower sealing cover, the shell assembly comprises an outer shell, a middle shell and an inner shell, the outer shell, the middle shell and the inner shell are arranged at intervals, and the shell assembly is of a three-layer nested structure; the inner shell on the innermost layer is used as a direct reaction cavity to be in direct contact with process gas and can be easily disassembled, replaced and maintained, the middle shell and the outer shell do not need to be disassembled, and the reaction chamber device is simple, convenient and efficient to maintain; an insulating interlayer is arranged between the middle shell and the inner shell and can isolate the inner shell from being in contact with the cooled middle shell, gas in reaction is prevented from being attached to or deposited on the pipe wall of the inner shell, the deposition amount of the inner shell is reduced, and replacement and maintenance of the reaction chamber device are reduced; the heights of the outer shell, the middle shell and the inner shell are sequentially increased, the inner shell is conveniently taken out, and the operation efficiency is high.

Description

Technical Field

[0001] The utility model relates to the technical field of chemical vapor deposition, in particular to a chemical vapor deposition high-temperature and high-vacuum reaction chamber device. Background Art

[0002] In semiconductor manufacturing, to produce discrete devices and integrated circuits, it is necessary to deposit various thin films on the wafer substrate. Among the methods for depositing thin films, chemical vapor deposition (CVD) is a commonly used method. CVD methods include low-pressure CVD, high-pressure CVD, plasma-enhanced CVD, and other CVD methods used in various semiconductor manufacturing processes.

[0003] CVD equipment is a device that can produce nano-scale thin films under high temperature and high vacuum. The process temperature can reach above 1000°C, and it has very high requirements for the temperature resistance and sealing of the cavity. Common metal cavities require complex processing technology to meet the use requirements. The complex design and processing requirements bring extremely high processing difficulty and high manufacturing costs.

[0004] In the related art, common quartz high-temperature reaction chamber devices are generally double-layer structures, with the outer layer being a water-cooled layer and the inner layer being a reaction chamber. Since the reaction chamber is in direct contact with the process reaction, its surface is easily contaminated by the deposited film and becomes blurred, and it has to be regularly disassembled for cleaning or replacement. The existing reaction chamber device must be completely disassembled inside and out during disassembly, which makes maintenance troublesome. Utility Model Content

[0005] In response to the problems in the related art, the present application discloses a chemical vapor deposition high-temperature and high-vacuum reaction chamber device, which solves the problem of inconvenient cleaning, replacement and disassembly of the reaction chamber in the related art.

[0006] To achieve the above objectives, this application provides the following technical solutions:

[0007] A chemical vapor deposition high-temperature and high-vacuum reaction chamber device includes a reaction chamber, wherein a shell assembly is provided around the reaction chamber, and an upper sealing cover and a lower sealing cover are sealed at the upper and lower parts of the shell assembly. The shell assembly, the upper sealing cover and the lower sealing cover enclose the reaction chamber, and the shell assembly includes an outer shell, an intermediate shell and an inner shell, and the outer shell, the intermediate shell and the inner shell are arranged alternately.

[0008] As a further solution of the present application: a cooling interlayer is provided between the outer shell and the intermediate shell, and the cooling interlayer is connected to the cooling interlayer and is provided with a cooling inlet and a cooling outlet.

[0009] As a further solution of the present application: an insulating interlayer is provided between the intermediate shell and the inner shell.

[0010] As a further solution of the present application: the outer shell, the middle shell and the inner shell are arranged in a staggered manner in the vertical direction.

[0011] As a further solution of the present application: at the contact ends of the outer shell, the intermediate shell, the inner shell and the upper sealing cover, the intermediate shell has a height greater than that of the outer shell, and the inner shell has a height greater than that of the intermediate shell.

[0012] As a further solution of the present application: the lower sealing cover is connected to a vacuum port.

[0013] In summary, the beneficial effects of this application are:

[0014] 1. Chemical vapor deposition high-temperature and high-vacuum reaction chamber device, the shell assembly, the upper sealing cover and the lower sealing cover form a reaction chamber. The shell assembly includes an outer shell, an intermediate shell and an inner shell. The outer shell, the intermediate shell and the inner shell are arranged alternately. The shell assembly has a three-layer nested structure. The innermost inner shell serves as a direct reaction chamber and is in direct contact with the process gas. It can be easily disassembled, replaced and repaired without removing the intermediate shell and the outer shell. The maintenance of the reaction chamber device is simple and efficient.

[0015] 2. A cooling interlayer is provided between the outer shell and the intermediate shell. The cooling interlayer is connected to a cooling inlet and a cooling outlet. The cooling inlet and the cooling outlet are connected to the cooling system to cool the pipeline. An insulating interlayer is provided between the intermediate shell and the inner shell. The insulating interlayer can isolate the inner shell from contact with the cooled intermediate shell, preventing the reaction gas from adhering to or depositing on the tube wall of the inner shell, reducing the amount of deposition in the inner shell and reducing the replacement and maintenance of the reaction chamber device.

[0016] 3. The outer shell, the middle shell and the inner shell are arranged in a staggered manner in the vertical direction. The staggered three-layer nested structure improves the sealing performance of the shell assembly and the sealing cover.

[0017] 4. At the contact end of the outer shell, the intermediate shell, the inner shell and the upper sealing cover, the height of the intermediate shell is greater than the height of the outer shell, the height of the inner shell is greater than the height of the intermediate shell, and at the contact end with the upper sealing cover, the heights of the outer shell, the intermediate shell and the inner shell become higher in sequence, which is convenient for removing the inner shell and has higher operating efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings are used to provide further understanding of the present application and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the present application and do not constitute a limitation of the present application.

[0019] In the attached figure:

[0020] Figure 1 This is a schematic diagram of the structure of this application.

[0021] Notes on reference numerals:

[0022] 1. Reaction chamber; 2. Upper sealing cover; 3. Lower sealing cover; 4. Outer shell; 5. Intermediate shell; 6. Inner shell; 7. Cooling interlayer; 8. Insulating interlayer; 9. Cooling inlet; 10. Cooling outlet; 11. Vacuum port; DETAILED DESCRIPTION

[0023] Exemplary embodiments will be described in detail herein, with examples illustrated in the accompanying drawings. In the following description, when referring to the drawings, identical numerals in different figures represent identical or similar elements, unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all embodiments consistent with the present application. Rather, they are merely examples of apparatuses and methods consistent with certain aspects of the present disclosure, as detailed in the appended claims.

[0024] It should be noted that all directional indications in the embodiments (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the various components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0025] In addition, the descriptions of "first" and "second" in the embodiments are only for descriptive purposes and do not specifically refer to the order or ranking, nor are they used to limit the present application. They are only used to distinguish components or operations described with the same technical terms, and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in this field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0026] In order to further understand the content, features and effects of the present application, the following embodiments are given as examples and described in detail with reference to the accompanying drawings:

[0027] like Figure 1 As shown:

[0028] The chemical vapor deposition (CVD) high-temperature, high-vacuum reaction chamber apparatus includes a reaction chamber 1 surrounded by a housing assembly. The housing assembly is sealed with an upper sealing cover 2 and a lower sealing cover 3 above and below the housing assembly. The housing assembly, the upper sealing cover 2, and the lower sealing cover 3 form the reaction chamber 1. The lower sealing cover 3 is connected to a vacuum port 11, which allows for evacuation of the reaction chamber 1. The reaction chamber 1 is connected to an air inlet and outlet via the upper sealing cover 2, allowing CVD operations to be performed within the reaction chamber 1.

[0029] Compared to traditional double-layer shells, the shell assembly includes an outer shell 4, an intermediate shell 5, and an inner shell 6, which are arranged alternately. The shell assembly has a three-layer nested structure. The innermost shell 6 serves as the direct reaction chamber and is in direct contact with the process gas. It can be easily disassembled, replaced, and repaired without removing the intermediate shell 5 and outer shell 4, making the reaction chamber 1 device simple and efficient to maintain.

[0030] The upper and lower sealing covers 2 and 3 are provided with retaining grooves at corresponding positions. The outer shell 4, intermediate shell 5, and inner shell 6 of the housing assembly are correspondingly locked in the retaining grooves. In addition, the retaining grooves are equipped with sealing rings to improve the sealing performance. In addition, the upper sealing cover 2 presses down on the inner layer to seal, and the inner shell 6 can be easily removed by opening the upper sealing cover 2.

[0031] A cooling interlayer 7 is provided between the outer shell 4 and the intermediate shell 5. This interlayer 7 is connected to a cooling inlet 9 and a cooling outlet 10. An insulating interlayer 8 is provided between the intermediate shell 5 and the inner shell 6. The cooling inlet 9 and the cooling outlet 10 are connected to a cooling system to cool the pipeline. The insulating interlayer 8 isolates the inner shell 6 from contact with the cooled intermediate shell 5, preventing the reacting gases from adhering to or depositing on the wall of the inner shell 6. This reduces the amount of deposits on the inner shell 6 and reduces the need for replacement and maintenance of the reaction chamber 1.

[0032] The width of the cooling interlayer 7 is greater than that of the insulating interlayer 8 .

[0033] The outer shell 4, the middle shell 5 and the inner shell 6 are arranged in a staggered manner in the vertical direction. The staggered three-layer nested structure improves the sealing performance of the shell assembly and the sealing cover.

[0034] Preferably, at the contact end of the outer shell 4, the intermediate shell 5, and the inner shell 6 with the upper sealing cover 2, the height of the intermediate shell 5 is greater than the height of the outer shell 4, and the height of the inner shell 6 is greater than the height of the intermediate shell 5. The heights of the outer shell 4, the intermediate shell 5, and the inner shell 6 become higher in sequence, which facilitates the removal of the inner shell 6 and has higher operating efficiency.

[0035] This device is designed in a relatively simple and low-cost way to reduce the manufacturing difficulty, but at the same time it can meet the requirements of high temperature and high vacuum sealing. It uses quartz material that is easier to obtain and process. Compared with other chamber structures designed with quartz, this patent designs a three-layer nested structure. The innermost inner shell 6 serves as a direct reaction chamber in direct contact with the process gas and can be easily disassembled for maintenance.

[0036] Finally, it should be noted that the above disclosure is only a preferred embodiment of the present application and is not intended to limit the present application. Although the present application has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments or to replace some of the technical features therein with equivalents. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application. The scope of the present application is limited only by the appended claims.

Claims

1. A chemical vapor deposition high-temperature high-vacuum reaction chamber device, comprising a reaction chamber (1), wherein the reaction chamber (1) is surrounded by a shell assembly, wherein the shell assembly is sealed with an upper sealing cover (2) and a lower sealing cover (3) above and below, and the shell assembly, the upper sealing cover (2) and the lower sealing cover (3) enclose the reaction chamber (1), characterized in that: The housing assembly comprises an outer shell (4), an intermediate shell (5) and an inner shell (6), wherein the outer shell (4), the intermediate shell (5) and the inner shell (6) are arranged alternately; A cooling interlayer (7) is provided between the outer shell (4) and the intermediate shell (5), and the cooling interlayer (7) is connected to a cooling inlet (9) and a cooling outlet (10).

2. The chemical vapor deposition high temperature and high vacuum reaction chamber device according to claim 1, characterized in that: An insulating interlayer (8) is provided between the intermediate shell (5) and the inner shell (6).

3. The chemical vapor deposition high temperature and high vacuum reaction chamber device according to claim 1, characterized in that: The outer shell (4), the middle shell (5), and the inner shell (6) are arranged in a staggered manner in a vertical direction.

4. The chemical vapor deposition high temperature and high vacuum reaction chamber device according to claim 1, characterized in that: The outer shell (4), the intermediate shell (5), the inner shell (6) and the upper sealing cover (2) are in contact with each other. The intermediate shell (5) is higher than the outer shell (4), and the inner shell (6) is higher than the intermediate shell (5).

5. The chemical vapor deposition high temperature and high vacuum reaction chamber device according to claim 1, characterized in that: The lower sealing cover (3) is connected to a vacuum port (11).

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