Plasma-assisted chemical vapor deposition equipment

Abstract

A plasma-assisted chemical vapor deposition apparatus includes a reaction chamber including a body, a process space and a top opening, a first gas line having an upstream end connected to a gas source, an upper cover assembly connected to the upstream end of the first gas line, and a second gas line having a downstream end connected to the upper cover assembly. The first gas pipeline comprises an embedded part located in the body and a protruding part which is connected with the embedded part and protrudes out of the body, the upper cover assembly is located on the body and comprises a cover plate and a top cover, the cover plate comprises a hollow part aligned with the top opening and a pipeline opening penetrating through the cover plate, and the top cover is located on the body. The second gas pipeline is arranged on the top cover and comprises an outlet end and an inlet end, the inlet end is connected with the pipeline opening, and the outlet end is connected with the hollow part and the process space.

Description

Technical Field

[0001] The utility model relates to plasma assisted chemical vapor deposition equipment, in particular to a gas supply structure of the plasma assisted chemical vapor deposition equipment. Background Art

[0002] Plasma-Enhanced CVD (PECVD) utilizes plasma to accelerate the reaction rate of precursors and is widely used in thin film deposition processes. In the PECVD process, multiple process gases are used, which are delivered to the reaction chamber via pipelines. For example, the design disclosed in U.S. Patent Publication No. US2023 / 0077652A1 incorporates gas delivery pipelines within various components to meet gas supply requirements. These pipelines are then interconnected to allow efficient delivery of process gases into the chamber.

[0003] In some equipment, the gas delivery line spans the top cover and reaction chamber, meaning it's not a continuous structure. Furthermore, the top cover needs to be opened and closed at the end and beginning of the process. Each movement often leads to misalignment or positioning errors in the gas delivery line. Even with the use of sealing rings (such as O-rings), slippage can compromise the airtightness and cause process gas leakage. Utility Model Content

[0004] The main purpose of the utility model is to solve the problem of alignment deviation in the gas supply structure of the existing plasma assisted chemical vapor deposition equipment.

[0005] To achieve the above-mentioned object, the present invention provides a plasma-assisted chemical vapor deposition apparatus, comprising a reaction chamber, one or more first gas pipelines, a top cover assembly, and one or more second gas pipelines, wherein the reaction chamber comprises a body, a process space formed concavely on an upper surface of the body, and a top opening connected to the top of the process space, an upstream end of the first gas pipeline is connected to one or more gas sources, and the first gas pipeline comprises a buried portion located in the body and a second gas pipeline connected to the buried portion. The upper cover assembly is movably positioned on the body, the upper cover assembly comprising a cover plate and a top cover positioned above the cover plate. The cover plate comprises a hollow portion aligned with the top opening and one or more pipeline openings extending through the cover plate. The second gas pipeline is disposed on the top cover and comprises an outlet end and an inlet end, the inlet end being adjacent to and connected to the pipeline opening, and the outlet end being adjacent to the hollow portion and connected to the hollow portion and the process space. When the upper cover assembly is closed relative to the reaction chamber, the protruding portion of the first gas pipeline is inserted into the pipeline opening of the cover plate of the upper cover assembly, thereby fluidly connecting with the inlet end of the second gas pipeline of the top cover, thereby guiding the process gas from the gas source into the process space through the first gas pipeline and the second gas pipeline.

[0006] In one embodiment, when the upper cover assembly is closed relative to the reaction chamber, the protruding portion of the first gas pipeline contacts and is fluidically connected to the inlet end of the second gas pipeline.

[0007] In one embodiment, when the upper cover assembly is closed relative to the reaction chamber, the protruding portion of the first gas pipeline and the inlet end of the second gas pipeline are adjacent to each other and fluidically connected.

[0008] In one embodiment, when the upper cover assembly is closed relative to the reaction chamber, no sealing element is provided between the protruding portion of the first gas pipeline and the inlet end of the second gas pipeline.

[0009] In one embodiment, when the upper cover assembly is closed relative to the reaction chamber, the protruding portion of the first gas pipeline and the inlet end of the second gas pipeline are coaxially aligned with each other.

[0010] In one embodiment, an inner diameter of the pipeline opening is substantially equal to an outer diameter of the protruding portion of the first gas pipeline.

[0011] In one embodiment, a depth of the pipeline opening is substantially equal to a protruding height of the protruding portion of the first gas pipeline.

[0012] In one embodiment, the upper cover assembly is connected to a lifting assembly, and the upper cover assembly is driven by the lifting assembly to move vertically relative to the reaction chamber.

[0013] In one embodiment, a shower head is further included, and the shower head is disposed in the hollow portion of the upper cover assembly.

[0014] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments, but they are not intended to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 , is a cross-sectional schematic diagram of the plasma-assisted chemical vapor deposition equipment covered with the upper cover assembly in one embodiment of the present invention.

[0016] Figure 2 , is a cross-sectional schematic diagram of the plasma-assisted chemical vapor deposition equipment with the upper cover assembly opened in one embodiment of the present invention.

[0017] Figure 3 , which is a schematic diagram of the three-dimensional structure of some parts of the utility model.

[0018] Among them, the reference numerals

[0019] 10: Reaction chamber

[0020] 11: Ontology

[0021] 111: Upper surface

[0022] 112: Lower surface

[0023] 12: Craft Space

[0024] 13: Top opening

[0025] 14: Carrying platform

[0026] 20: First gas pipeline

[0027] 20a: Upstream end

[0028] 20b: Downstream end

[0029] 21: Part 1

[0030] 22: Part 2

[0031] 30: Upper cover assembly

[0032] 31: Cover

[0033] 311: Hollow

[0034] 312: Pipe opening

[0035] 32: Top cover

[0036] 40: Second gas pipeline

[0037] 40a: Exit

[0038] 40b: Entry port

[0039] 50: Sprinkler head

[0040] 60: Gas source

[0041] 70: Lifting components

[0042] 90: Substrate DETAILED DESCRIPTION

[0043] The terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the present invention. Unless the context indicates otherwise, the singular forms "a", "an" and "the" used herein may also include plural forms.

[0044] Directional terms used herein, such as up, down, left, right, front, and back, and their derivatives or synonyms, refer to the orientation of elements in the drawings and are not intended to limit the present invention unless the context clearly indicates otherwise. As used herein, "connected" includes direct structural connection (e.g., two elements contacting each other) or indirect connection, and also encompasses direct or indirect fluid connection without structural connection, depending on the context.

[0045] See Figure 1 The present invention discloses a plasma-assisted chemical vapor deposition apparatus, comprising a reaction chamber 10, one or more first gas pipelines 20, a top cover assembly 30, one or more second gas pipelines 40, and a showerhead 50. The first gas pipeline 20 and the second gas pipeline 40 are structurally separate components, but can be fluidically connected to guide one or more process gases into the reaction chamber 10. The first gas pipeline 20 is a gas path disposed in the reaction chamber 10, and the second gas pipeline 40 is disposed in the top cover assembly 30.

[0046] The reaction chamber 10 includes a main body 11, a process space 12, and a top opening 13. The process space 12 is recessed in an upper surface 111 of the main body 11, and the top opening 13 is connected to the top of the process space 12. A carrier 14 is disposed in the process space 12 for placing a substrate 90 to be deposited.

[0047] The first gas pipeline 20 is provided through the body 11. In one example, the first gas pipeline 20 is provided substantially vertically through the body 11, that is, the first gas pipeline 20 extends along a direction perpendicular to the plane of the upper surface 111, but the present invention is not limited thereto. Each of the first gas pipelines 20 includes an upstream end 20a and a downstream end 20b, which are combined with the upstream end 20a and the downstream end 20b. Figure 2Each of the first gas conduits 20 further includes a buried portion (hereinafter referred to as a first portion 21) and a protruding portion (hereinafter referred to as a second portion 22). In one example, the first portion 21 is defined as being located within the body 11 and not protruding from the body 11, while the second portion 22 is defined as being located outside the body 11 and protruding from the upper surface 111 of the body 11. The upstream end 20a is located at the first portion 21, while the downstream end 20b is located at the second portion 22. The first portion 21 is configured to connect to one or more gas sources 60. In one example, the first portion 21 extends to a lower surface 112 of the body 11, while the second portion 22 is configured to protrude from the upper surface 111 to pass through at least a portion of the upper cover assembly 30 and connect to one or more gas conduits located within the upper cover assembly 30.

[0048] The upper cover assembly 30 is movably positioned above the body 11 and comprises a cover plate 31 and a top cover 32. The top cover 32 is positioned above the cover plate 31, with the two overlapping. The cover plate 31 is used to mount the showerhead 50, allowing the showerhead 50 to be positioned above the carrier 14. The top cover 32 is used to seal the process space 12, and the second gas pipeline 40 is at least partially disposed within the top cover 32. The cover plate 31 has a hollow portion 311 and one or more pipeline openings 312. The showerhead 50 is disposed within the hollow portion 311. The hollow portion 311 is aligned with the top opening 13 of the reaction chamber 10 and connects to the process space 12. The pipeline openings 312 are located adjacent to the hollow portion 311. The pipeline openings 312 pass through the cover plate 31 and correspondingly receive the second portion 22 of the first gas pipeline 20 protruding from the body 11. In other words, the second portion 22 of the first gas conduit 20 is the conduit opening 312 that passes through the cover plate 31 of the upper cover assembly 30. In one example, an inner diameter of the conduit opening 312 is approximately equal to an outer diameter of the second portion 22, and a depth of the conduit opening 312 is approximately equal to a protruding height of the second portion 22. In another example, the conduit opening 312 can be considered a groove disposed on a bottom surface of the upper cover assembly 30.

[0049] The second gas line 40 has an outlet end 40a and an inlet end 40b, which are connected to each other. The outlet end 40a is adjacent to the hollow portion 311, and the inlet end 40b is adjacent to the line opening 312. When the upper cover assembly 30 is closed, the outlet end 40a of the second gas line 40 is connected to the hollow portion 311, the showerhead 50, and the process chamber 12, while the inlet end 40b of the second gas line 40 is connected to the second portion 22 of the first gas line 20, thereby forming a continuous gas path between the first gas line 20 and the second gas line 40. In one example, the inlet end 40b of the second gas line 40 is coaxially aligned with the second portion 22 of the first gas line 20, and no O-ring or other sealing element is provided between the inlet end 40b of the second gas line 40 and the downstream end 20b of the second portion 22 of the first gas line 20. In another example, the inlet end 40 b of the second gas pipeline 40 is in contact with or in close proximity to the downstream end 20 b of the second portion 22 of the first gas pipeline 20 . The present invention is not limited to the inlet end 40 b of the second gas pipeline 40 being in close contact with the downstream end 20 b of the second portion 22 of the first gas pipeline 20 , as long as the inlet end 40 b and the downstream end 20 b are fluidically connected.

[0050] In addition, in one example, the upper cover assembly 30 can be covered by a lifting assembly 70 (eg Figure 1 ) or open (such as Figure 2 or Figure 3 ), the upper cover assembly 30 is driven by the lifting assembly 70 and can move vertically relative to the reaction chamber 10, so as to be set on the reaction chamber 10 or detached from the reaction chamber 10.

[0051] In conventional plasma-assisted chemical vapor deposition equipment, the joints of the gas pipelines that connect the upper cover and the reaction chamber adopt a non-protruding structure, which often leads to horizontal positioning problems. The present invention proposes a protruding structural design, where the downstream end 20b of the second portion 22 of the first gas pipeline 20 is deliberately protruded from the upper surface 111 of the main body 11, and a depression corresponding to the second portion 22 (i.e., the pipeline opening 312) is provided in the upper cover assembly 30. By utilizing the cooperation between the pipeline opening 312 and the second portion 22, even if there is a slight positioning deviation between the upper cover assembly 30 and the reaction chamber 10 in the horizontal direction, the second portion 22 can still be inserted between the pipeline opening 312 to automatically achieve the alignment effect, thereby ensuring that the process gas will not leak out and eliminating the need for O-rings or sealing elements.

[0052] Of course, the present invention may have many other embodiments. Without departing from the spirit and essence of the present invention, technicians familiar with the field can make various corresponding changes and modifications based on the present invention, but these corresponding changes and modifications should all fall within the scope of protection of the claims attached to the present invention.

Claims

1. A plasma-assisted chemical vapor deposition device, characterized in that: include: A reaction chamber includes a body, a process space formed concavely on an upper surface of the body, and a top opening connected to the upper portion of the process space; one or more first gas pipelines disposed in the body, wherein an upstream end of each first gas pipeline is connected to one or more gas sources, and each first gas pipeline comprises a buried portion located in the body and a protruding portion connected to the buried portion and protruding from the upper surface of the body; an upper cover assembly movably located on the body, the upper cover assembly comprising a cover plate and a top cover located above the cover plate, the cover plate comprising a hollow portion aligned with the top opening and one or more pipe openings passing through the cover plate; as well as One or more second gas pipelines disposed on the top cover, each comprising an outlet end and an inlet end, the inlet end being adjacent to and connected to the pipeline opening, and the outlet end being adjacent to the hollow portion and connected to the hollow portion and the process space; When the upper cover assembly is closed relative to the reaction chamber, the protruding portion of the first gas pipeline is inserted into the pipeline opening of the cover plate of the upper cover assembly, thereby fluidly connecting with the inlet end of the second gas pipeline of the top cover to guide the process gas from the gas source into the process space through the first gas pipeline and the second gas pipeline.

2. The plasma-assisted chemical vapor deposition apparatus according to claim 1, wherein: When the upper cover assembly is closed relative to the reaction chamber, the protruding portion of the first gas pipeline contacts and is fluidically connected to the inlet end of the second gas pipeline.

3. The plasma-assisted chemical vapor deposition apparatus according to claim 1, wherein: When the upper cover assembly is closed relative to the reaction chamber, the protruding portion of the first gas pipeline and the inlet end of the second gas pipeline are closely adjacent to each other and fluidically connected.

4. The plasma-assisted chemical vapor deposition apparatus according to claim 1, wherein: When the upper cover assembly is closed relative to the reaction chamber, no sealing element is present between the protruding portion of the first gas pipeline and the inlet end of the second gas pipeline.

5. The plasma-assisted chemical vapor deposition apparatus according to claim 1, wherein: When the upper cover assembly is closed relative to the reaction chamber, the protruding portion of the first gas pipeline and the inlet end of the second gas pipeline are coaxially aligned with each other.

6. The plasma-assisted chemical vapor deposition apparatus according to claim 1, wherein: An inner diameter of the pipeline opening is equal to an outer diameter of the protruding portion of the first gas pipeline.

7. The plasma-assisted chemical vapor deposition apparatus according to claim 1, wherein: A depth of the pipeline opening is equal to a protruding height of the protruding portion of the first gas pipeline.

8. The plasma-assisted chemical vapor deposition apparatus according to claim 1, wherein: The upper cover assembly is connected to a lifting assembly, and the upper cover assembly is driven by the lifting assembly to move vertically relative to the reaction chamber.

9. The plasma-assisted chemical vapor deposition apparatus according to claim 1, wherein: The utility model further comprises a shower head, which is arranged in the hollow part of the upper cover component.

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