Chemical vapor deposition equipment

Abstract

The utility model discloses chemical vapor deposition equipment, which comprises a deposition chamber, a first electrode, a second electrode and a diffusion plate, a plurality of diffusion holes are uniformly arrayed on the diffusion plate, each diffusion hole comprises a first hole section and a second hole section, and the aperture of the second hole section is smaller than that of the first hole section. More specifically, the chemical vapor deposition equipment further comprises a cleaning device, the cleaning device comprises a lifting driving part and a plurality of cleaning rods, the lifting driving part is arranged in the deposition chamber, each cleaning rod comprises a first rod part and a second rod part which are connected, and the first rod part is connected between the second rod part and the driving end of the lifting driving part. The first rod part can be inserted into the first hole section in a matched mode, the second rod part can be inserted into the second hole section in a matched mode, the length of the second rod part is larger than that of the second hole section, and the cleaning device can automatically clean the second hole section so that the diffusion effect of the diffusion plate on reaction gas can be easily kept at a good level.

Description

Technical Field

[0001] The utility model relates to the technical field of chemical vapor deposition, in particular to a chemical vapor deposition device. Background Art

[0002] like Figure 1 As shown, a chemical vapor deposition apparatus 100' in related art typically includes a deposition chamber 1', a first electrode 2' located at the top of the deposition chamber 1', and a second electrode 3' located at the bottom of the deposition chamber 1'. When a film is to be applied to the surface of an unfinished panel, the panel is placed on the second electrode 3'. The deposition chamber 1' is filled with a reaction gas containing film-forming materials. By connecting the first electrode 2' and the second electrode 3', the reaction gas is converted into a plasma state, allowing the film-forming materials to react uniformly on the surface of the panel and deposit to form a film layer.

[0003] Please combine Figure 1 and Figure 2 As shown, in order to make the reaction gas flow more evenly to the surface of the panel to improve the thickness uniformity of the film layer formed on the surface of the panel, some first electrodes 2' include an electrode body 20' and a diffusion plate 21' arranged between the electrode body 20' and the second electrode 3', a spacing space 11' is formed between the diffusion plate 21' and the electrode body 20', and the input channel 4' of the reaction gas is connected to the spacing space 11', and a plurality of diffusion holes 22' are uniformly arrayed on the diffusion plate 21'. The diffusion holes 22' generally include a first hole section 221' connected to the spacing space 11', and a second hole section 222' connected to the side of the diffusion plate 21' facing the second electrode 3' and the first hole section 221', wherein the aperture of the second hole section 222' is smaller than the aperture of the first hole section 221', so that the flow path of the reaction gas can be reduced through the second hole section 222' to increase the flow rate of the reaction gas when entering between the second electrode 3' and the diffusion plate 21', thereby improving the degree of ionization reaction of the reaction gas between the second electrode 3' and the diffusion plate 21'.

[0004] However, since the second hole segment 222' is relatively small, it is easy for the plasma-state reaction gas to contact the hole wall of the second hole segment 222' to form a film layer and block the second hole segment 222', or for impurity particles in the deposition chamber 1' to float up and enter the second hole segment 222' and block the second hole segment 222', resulting in a decrease in the effect of the diffusion plate 21' in uniformly diffusing the reaction gas. Utility Model Content

[0005] The purpose of the utility model is to provide a chemical vapor deposition device, which can automatically clean the second hole section so that the diffusion effect of the diffusion plate on the reaction gas can be easily maintained at a good level.

[0006] To achieve this purpose, the present invention adopts the following technical solutions:

[0007] Provided is a chemical vapor deposition apparatus, comprising a deposition chamber, a first electrode disposed at the top of the deposition chamber, and a second electrode disposed at the bottom of the deposition chamber, wherein the first electrode comprises an electrode body and a diffusion plate disposed between the electrode body and the second electrode, wherein a space is formed between the diffusion plate and the electrode body, wherein an input channel for a reaction gas is connected to the space, wherein a plurality of diffusion holes are uniformly arrayed on the diffusion plate, wherein the diffusion holes comprise a first hole segment connected to the space, and a second hole segment connected between a side of the diffusion plate facing the second electrode and the first hole segment, wherein the aperture of the second hole segment is smaller than the aperture of the first hole segment, and wherein the chemical vapor deposition apparatus further comprises:

[0008] A cleaning device, the cleaning device includes a lifting drive and multiple cleaning rods, the lifting drive is arranged in the deposition chamber, the cleaning rod includes a first rod portion and a second rod portion connected to each other, the first rod portion is connected between the second rod portion and the driving end of the lifting drive, the first rod portion can be fitted and inserted in the first hole segment, the second rod portion can be fitted and inserted in the second hole segment, and the length of the second rod portion is greater than the length of the second hole segment.

[0009] As a preferred solution of the chemical vapor deposition equipment, the second rod portion is elastic.

[0010] As a preferred solution of chemical vapor deposition equipment, the electrode body is provided with a first threaded hole, and the top of the deposition chamber is provided with a second threaded hole corresponding to the first threaded hole. The lifting drive member includes a connected driving body and a screw. The driving body can drive the screw to rotate around its own central axis. The length direction of the screw is parallel to the relative direction of the diffusion plate and the electrode body, and the screw is cooperatively connected to the first threaded hole and the second threaded hole, and the end of the screw away from the driving body is connected to an end of the first rod away from the second rod.

[0011] As a preferred solution of the chemical vapor deposition equipment, the cleaning device also includes a transmission seat, which is arranged in the interval space, connected to multiple first rods, and further connected to the driving end of the lifting drive member.

[0012] As a preferred solution of the chemical vapor deposition equipment, the first rod portion is detachably connected to the transmission base via a threaded fastener.

[0013] As a preferred solution of the chemical vapor deposition equipment, the cleaning device includes a plurality of the transmission seats and a plurality of the lifting drive members, and each of the transmission seats is connected to a different lifting drive member.

[0014] As a preferred solution of chemical vapor deposition equipment, the diffusion plate includes a middle part and a peripheral part surrounding the outer circumference of the middle part. The multiple transmission seats include at least one first transmission seat and at least one second transmission seat. The cleaning rod connected to the first transmission seat can be correspondingly inserted into the diffusion hole provided in the middle part, and the cleaning rod connected to the second transmission seat can be correspondingly inserted into the diffusion hole provided in the peripheral part.

[0015] As a preferred solution of the chemical vapor deposition equipment, the multiple transmission seats include multiple first transmission seats, and the number of cleaning rods connected to all the first transmission seats is different, or, among the multiple first transmission seats, the number of cleaning rods connected to at least two of the first transmission seats is the same.

[0016] As a preferred solution of the chemical vapor deposition equipment, the multiple transmission seats include multiple second transmission seats, and the number of cleaning rods connected to all the second transmission seats is different, or, among the multiple second transmission seats, the number of cleaning rods connected to at least two of the second transmission seats is the same.

[0017] As a preferred solution of the chemical vapor deposition equipment, among the multiple second transmission seats, the ratio of the number of cleaning rods connected to at least one second transmission seat to the number of diffusion holes provided in the outer part is smaller than the ratio of the number of cleaning rods connected to at least one first transmission seat to the number of diffusion holes provided in the middle part.

[0018] Compared with the prior art, the present invention has the following advantages:

[0019] The chemical vapor deposition apparatus of the present invention is provided with a cleaning device, wherein a cleaning rod of the cleaning device can be driven by a lifting drive member to descend to engage with and insert into the first hole segment and the second hole segment, thereby propelling impurities adhering to the inner wall of the second hole segment and releasing them from the second hole segment, thereby cleaning the second hole segment and reducing the number of blocked second hole segments, thereby facilitating the diffusion plate to maintain a good level of diffusion effect on the reaction gas. Furthermore, after cleaning is completed, the cleaning rod can be driven by the lifting drive member to ascend until it is completely located within the spaced-apart space, thereby preventing the cleaning rod from obstructing the reaction gas from entering the diffusion hole.

[0020] Furthermore, since the diameter of the second hole section is typically relatively small, roughly within the range of 0.5mm to 0.8mm, the diameter of the second rod portion is also relatively small, resulting in a lower structural strength of the second rod portion and a greater likelihood of breaking under external forces. Therefore, by providing the cleaning rod with a first rod portion that can be mated and inserted into the first hole section, the first rod portion can be used to mate with the first hole section so that the second rod portion is aligned with the second hole section before entering the second hole section. This reduces the likelihood of the second rod portion breaking due to collision with the inner wall of the diffusion hole at the connection between the second and first hole sections, thereby reducing the likelihood of the cleaning rod losing its cleaning function and thus improving the cleaning performance and service life of the cleaning device. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic structural diagram of a chemical vapor deposition device provided by the prior art.

[0022] Figure 2 for Figure 1 Enlarged schematic diagram of point L in the middle.

[0023] Figure 3 This is a structural schematic diagram of a chemical vapor deposition device according to an embodiment of the present invention (when all cleaning rods are far away from the diffusion hole).

[0024] Figure 4 for Figure 1 Enlarged schematic diagram of point M in the middle.

[0025] Figure 5 This is a structural schematic diagram of the chemical vapor deposition equipment according to an embodiment of the present invention (when all cleaning rods are plugged into the diffusion holes).

[0026] Figure 6 for Figure 1 Enlarged schematic diagram of point N in the middle.

[0027] Figure 7 This is a structural diagram of a chemical vapor deposition device according to an embodiment of the present invention (part of the cleaning rod is away from the diffusion hole, and part of the cleaning rod is inserted into the diffusion hole).

[0028] Figure 8 for Figure 1 Enlarged schematic diagram of point O in the middle.

[0029] Figure 1 and Figure 2 middle:

[0030] 100', chemical vapor deposition equipment;

[0031] 1', deposition chamber; 11', separation space;

[0032] 2', first electrode; 20', electrode body; 21', diffusion plate; 22', diffusion hole; 221', first hole segment; 222', second hole segment;

[0033] 3', second electrode;

[0034] 4', input channel.

[0035] Figures 3 to 8 middle:

[0036] 100. Chemical vapor deposition equipment;

[0037] 1. Deposition chamber; 11. Spacing space; 12. Second threaded hole;

[0038] 2. First electrode; 20. Electrode body; 201. First threaded hole; 21. Diffuser plate; 211. Middle portion; 212. Peripheral portion; 22. Diffuser hole; 221. First hole segment; 222. Second hole segment;

[0039] 3. a second electrode;

[0040] 4. Input channel;

[0041] 5. Cleaning device; 50. Lifting drive member; 501. Driving body; 502. Screw; 51. Cleaning rod; 511. First rod portion; 512. Second rod portion; 52. Transmission seat; 521. First transmission seat; 522. Second transmission seat; 53. Threaded fastener. DETAILED DESCRIPTION

[0042] The advantages and features of the present invention and methods for achieving them will become apparent with reference to the embodiments described in detail below in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in a variety of different forms. These embodiments are provided merely to complete the disclosure of the present invention and enable those skilled in the art to fully understand the scope of the present invention. The present invention is limited only by the scope of the claims. The same reference numerals represent the same components throughout the specification.

[0043] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

[0044] like Figures 3 to 6As shown, a chemical vapor deposition device 100 is provided, including a deposition chamber 1, a first electrode 2 arranged at the top of the deposition chamber 1, and a second electrode 3 arranged at the bottom of the deposition chamber 1, the first electrode 2 includes an electrode body 20 and a diffusion plate 21 arranged between the electrode body 20 and the second electrode 3, a partition space 11 is formed between the diffusion plate 21 and the electrode body 20, an input channel 4 for the reaction gas is connected to the partition space 11, a plurality of diffusion holes 22 are uniformly arrayed on the diffusion plate 21, the diffusion holes 22 include a first hole section 221 connected to the partition space 11, and a second hole section 222 connected between the side of the diffusion plate 21 facing the second electrode 3 and the first hole section 221, wherein the aperture of the second hole section 222 is smaller than the aperture of the first hole section 221. Furthermore, the chemical vapor deposition equipment 100 also includes a cleaning device 5, which includes a lifting drive 50 and multiple cleaning rods 51. The lifting drive 50 is arranged in the deposition chamber 1. The cleaning rod 51 includes a first rod portion 511 and a second rod portion 512 that are connected to each other. The first rod portion 511 is connected between the second rod portion 512 and the driving end of the lifting drive 50. The first rod portion 511 can be fitted and plugged into the first hole section 221, and the second rod portion 512 can be fitted and plugged into the second hole section 222, and the length of the second rod portion 512 is greater than the length of the second hole section 222.

[0045] The top and bottom mentioned above are the top and bottom located at the top and bottom located at the bottom along the gravity direction when the chemical vapor deposition equipment 100 is in use. Figures 3 to 6 As shown, Figures 3 to 6 : shows the up and down directions of the chemical vapor deposition apparatus 100 along the gravity direction in the use state.

[0046] By providing a cleaning device 5, the cleaning rod 51 of the cleaning device 5 can be driven by the lifting drive 50 to descend until it is engaged with the first hole section 221 and the second hole section 222, thereby dislodging impurities adhering to the inner wall of the second hole section 222 and removing them from the second hole section 222. This cleans the second hole section 222, reduces the number of blocked second hole sections 222, and facilitates maintaining a good diffusion effect of the reaction gas on the diffuser plate 21. Furthermore, after cleaning is completed, the lifting drive 50 can drive the cleaning rod 51 to rise until it is completely located within the separation space 11, thereby preventing the cleaning rod 51 from obstructing the reaction gas from entering the diffusion hole 22.

[0047] Furthermore, since the aperture of the second hole section 222 is typically relatively small, generally within the range of 0.5 mm to 0.8 mm, the diameter of the second rod portion 512 is also relatively small, resulting in a lower structural strength of the second rod portion 512 and making it susceptible to breaking under external forces. Therefore, by providing the cleaning rod 51 with a first rod portion 511 that can be mated and inserted into the first hole section 221, the first rod portion 511 can be utilized to mate with the first hole section 221 so that the second rod portion 512 is aligned with the second hole section 222 before entering the second hole section 222. This reduces the possibility of the second rod portion 512 colliding with the inner wall of the diffusion hole 22 at the junction of the second hole section 222 and the first hole section 221, thereby breaking the second rod portion 512 and causing the cleaning rod 51 to lose its cleaning function, thereby improving the cleaning performance and service life of the cleaning device 5.

[0048] Optionally, the second rod portion 512 is elastic, that is, the second rod portion 512 is made of an elastic material, so that the second rod portion 512 can undergo a certain degree of elastic deformation, so that on the one hand, the second rod portion 512 is less likely to break after a collision, thereby further improving the service life of the cleaning device 5, and on the other hand, the second rod portion 512 still has the cleaning function of poking impurities adhered to the inner wall of the second hole segment 222 out of the second hole segment 222.

[0049] Optionally, the electrode body 20 is provided with a first threaded hole 201, and the top of the deposition chamber 1 is provided with a second threaded hole 12 corresponding to the first threaded hole 201. The lifting drive member 50 includes a driving body 501 and a screw 502 connected thereto. The driving body 501 can drive the screw 502 to rotate around its own central axis. The length direction of the screw 502 is parallel to the relative direction of the diffuser 21 and the electrode body 20, and the screw 502 is connected to the first threaded hole 201 and the second threaded hole 12, and the end of the screw 502 away from the driving body 501 is connected to the first rod 5 11 is away from one end of the second rod portion 512, so that when the driving body 501 drives the screw 502 to rotate about its own central axis, the screw 502 can rotate relative to the first threaded hole 201 and the second threaded hole 12, while also moving relative to the first threaded hole 201 and the second threaded hole 12 along the length direction of the screw 502 itself (i.e., the relative direction between the diffuser plate 21 and the electrode body 20), thereby driving the first rod portion 511 and the second rod portion 512 as a whole to rise and fall along the relative direction between the diffuser plate 21 and the electrode body 20, so as to move away from or closer to the diffuser plate 21. In addition, such an arrangement, on the one hand, allows the driving body 501 to be disposed outside the deposition chamber 1 to prevent the driving body 501 from being affected by the reaction gas and the electric field in the deposition chamber 1, and on the other hand, allows the gap between the screw 502 and the first threaded hole 201 to be smaller, thereby reducing the possibility of the reaction gas in the deposition chamber 1 leaking to the external space.

[0050] In other embodiments, the lifting drive component 50 may also include but is not limited to a linear motor and a cylinder.

[0051] Optionally, the cleaning device 5 also includes a transmission seat 52, which is arranged in the interval space 11. The transmission seat 52 is connected to multiple first rod portions 511. The transmission seat 52 is also connected to the driving end of the lifting drive 50, so that the transmission seat 52 can carry multiple cleaning rods 51, and the lifting drive 50 can simultaneously control the lifting of multiple cleaning rods 51 through the transmission seat 52.

[0052] Optionally, the first rod portion 511 is detachably connected to the transmission seat 52 via a threaded fastener 53, so that the connection between the first rod portion 511 and the transmission seat 52 is more stable, and the first rod portion 511 can be easily disassembled and assembled to the transmission seat 52, thereby facilitating the disassembly, assembly, maintenance and replacement of the first rod portion 511.

[0053] Optionally, the cleaning device 5 includes multiple transmission seats 52 and multiple lifting drive members 50, and each transmission seat 52 is connected to a different lifting drive member 50, so that each transmission seat 52 can be driven to rise and fall respectively by different lifting drive members 50, thereby not only being able to clean each diffusion hole 22 by the cleaning rod 51, but also being able to control at least one transmission seat 52 to be close to the diffusion plate 21, so that the cleaning rod 51 on the at least one transmission seat 52 can be used to specifically block part of the diffusion holes 22, so as to be able to adjust the distribution density of the diffusion holes 22.

[0054] When, as described in the aforementioned technical solution, the lifting drive member 50 includes a connected driving body 501 and a screw 502, optionally, any one transmission seat 52 is connected to at least two lifting drive members 50, and the end of the screw 502 of the lifting drive member 50 away from the driving body 501 can be rotatably connected to the transmission seat 52, so that the screw 502 rotates relative to the first threaded hole 201 and the second threaded hole 12, and also moves relative to the first threaded hole 201 and the second threaded hole 12 along the length direction of the screw 502 itself (that is, the relative direction of the diffuser 21 and the electrode body 20), so that the transmission seat 52 does not rotate with the screw 502, but only rises and falls along the relative direction of the diffuser 21 and the electrode body 20 under the drive of the screw 502, so as to move away from or approach the diffuser 21.

[0055] It is understandable that when the panel is placed in the deposition chamber 1 for chemical vapor deposition, since the edge of the panel is closer to the inner wall of the deposition chamber 1, the plasma encounters greater resistance when flowing to the edge of the panel, resulting in a smaller amount of plasma flowing to the edge of the panel. The thickness of the film formed at the edge of the panel is less than the thickness of the film formed at the center of the panel. Based on this, please combine Figure 7 and Figure 8As shown, optionally, the diffusion plate 21 includes a middle portion 211 and a peripheral portion 212 surrounding the outer periphery of the middle portion 211, and the multiple transmission seats 52 include at least one first transmission seat 521 and at least one second transmission seat 522. The cleaning rod 51 connected to the first transmission seat 521 can be correspondingly inserted into the diffusion hole 22 provided in the middle portion 211, and the cleaning rod 51 connected to the second transmission seat 522 can be correspondingly inserted into the diffusion hole 22 provided in the peripheral portion 212. Therefore, when the chemical deposition equipment is in use, the cleaning rod 51 on the first transmission seat 521 can be used to specifically block the diffusion hole 22 provided in the middle portion 211, so that the number of diffusion holes 22 that can be used for the reaction gas to pass through in a unit area of ​​the middle portion 211 is less than the number of diffusion holes 22 that can be used for the reaction gas to pass through in a unit area of ​​the peripheral portion 212, thereby increasing the amount of plasma flowing to the edge of the panel to improve the thickness uniformity of the film layer deposited on the surface of the panel, wherein, Figure 8 The dotted line exemplarily shows the boundary between the middle part 211 and the peripheral part 212. It can be understood that the dotted line is only used to illustrate the boundary position between the middle part 211 and the peripheral part 212, and does not represent the actual structural shape of the boundary.

[0056] Optionally, the plurality of transmission seats 52 include a plurality of first transmission seats 521 , so that some diffusion holes 22 can be provided in the middle portion 211 for blocking.

[0057] Optionally, multiple first transmission seats 521 can be arranged in sequence from the middle part 211 to the outer part 212, and one first transmission seat 521 is arranged around the periphery of another first transmission seat 521 located away from the outer part 212, or multiple first transmission seats 521 can be arranged in an array.

[0058] In an optional example, the number of cleaning rods 51 connected to all the first transmission seats 521 is different, so the number of diffusion holes 22 that can be blocked by the cleaning rods 51 on each first transmission seat 521 is also different. By adjusting which first transmission seat 521 is close to the diffusion plate 21, the blocking rate of the diffusion holes 22 provided in the middle part 211 when the chemical vapor deposition equipment 100 is in use can be more flexibly adjusted, and then the flow rate of the reaction gas entering between the diffusion plate 21 and the second electrode 3 from the diffusion holes 22 in the middle part 211 can be more flexibly adjusted.

[0059] In another optional example, among the multiple first transmission seats 521, the number of cleaning rods 51 connected to at least two first transmission seats 521 is the same, so that by adjusting the specific number of first transmission seats 521 close to the diffusion plate 21, the blocking rate of the diffusion holes 22 provided in the middle part 211 when the chemical vapor deposition equipment 100 is in use can be more flexibly adjusted, and then the flow rate of the reaction gas entering between the diffusion plate 21 and the second electrode 3 from the diffusion holes 22 in the middle part 211 can be more flexibly adjusted.

[0060] Optionally, the plurality of transmission seats 52 include a plurality of second transmission seats 522 , so that when necessary, some diffusion holes 22 can be provided in the peripheral portion 212 for blocking.

[0061] Optionally, multiple second transmission seats 522 can be arranged in sequence from the middle part 211 to the outer part 212, and one second transmission seat 522 is arranged around the periphery of another second transmission seat 522 located near the middle part 211, or multiple second transmission seats 522 can be arranged in an array.

[0062] In an optional example, the number of cleaning rods 51 connected to all the second transmission seats 522 is different, so that the number of diffusion holes 22 that can be blocked by the cleaning rods 51 on each second transmission seat 522 is also different. By adjusting which second transmission seat 522 is close to the diffusion plate 21, the blocking rate of the diffusion holes 22 provided in the peripheral part 212 when the chemical vapor deposition equipment 100 is in use can be more flexibly adjusted, and then the flow rate of the reaction gas entering between the diffusion plate 21 and the second electrode 3 from the diffusion holes 22 in the peripheral part 212 can be more flexibly adjusted.

[0063] In another optional example, among the multiple second transmission seats 522, at least two second transmission seats 522 are connected to the same number of cleaning rods 51, so that by adjusting the specific number of second transmission seats 522 close to the diffusion plate 21, the blocking rate of the diffusion holes 22 provided in the peripheral part 212 when the chemical vapor deposition equipment 100 is in use can be more flexibly adjusted, and then the flow rate of the reaction gas entering between the diffusion plate 21 and the second electrode 3 from the diffusion holes 22 in the peripheral part 212 can be more flexibly adjusted.

[0064] Optionally, among the multiple second transmission seats 522, the ratio of the number of cleaning rods 51 connected to at least one second transmission seat 522 to the number of diffusion holes 22 provided in the peripheral part 212 is smaller than the ratio of the number of cleaning rods 51 connected to at least one first transmission seat 521 to the number of diffusion holes 22 provided in the middle part 211. Therefore, when it is necessary to move the at least one second transmission seat 522 close to the diffusion plate 21 so that the cleaning rods 51 on the at least one second transmission seat 522 can specifically block some of the diffusion holes 22 provided in the peripheral part 212, the cleaning rods 51 connected to the at least one first transmission seat 521 can be simultaneously moved close to the diffusion plate 21 to specifically block some of the diffusion holes 22 provided in the middle part 211. Therefore, the number of diffusion holes 22 available for reaction gas to pass through in a unit area of ​​the middle part 211 is smaller than the number of diffusion holes 22 available for reaction gas to pass through in a unit area of ​​the peripheral part 212. Therefore, the amount of plasma flowing to the edge of the panel can be increased, so as to improve the thickness uniformity of the film layer deposited on the surface of the panel.

[0065] Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to the above embodiments, but can be manufactured in various forms, and those skilled in the art will understand that the present invention can be implemented in other specific forms without changing the technical spirit or basic features of the present invention. Therefore, it should be understood that the above embodiments are illustrative and not restrictive in all aspects.

Claims

1. A chemical vapor deposition apparatus, comprising a deposition chamber, a first electrode disposed at the top of the deposition chamber, and a second electrode disposed at the bottom of the deposition chamber, wherein the first electrode comprises an electrode body and a diffusion plate disposed between the electrode body and the second electrode, wherein a spacing space is formed between the diffusion plate and the electrode body, an input channel for a reaction gas is connected to the spacing space, a plurality of diffusion holes are uniformly arrayed on the diffusion plate, the diffusion holes comprising a first hole segment connected to the spacing space, and a second hole segment connected between the first hole segment and a side of the diffusion plate facing the second electrode, wherein: The aperture of the second hole segment is smaller than the aperture of the first hole segment, and the chemical vapor deposition equipment further comprises: A cleaning device, the cleaning device includes a lifting drive and multiple cleaning rods, the lifting drive is arranged in the deposition chamber, the cleaning rod includes a first rod portion and a second rod portion connected to each other, the first rod portion is connected between the second rod portion and the driving end of the lifting drive, the first rod portion can be fitted and inserted in the first hole segment, the second rod portion can be fitted and inserted in the second hole segment, and the length of the second rod portion is greater than the length of the second hole segment.

2. The chemical vapor deposition apparatus according to claim 1, wherein: The second rod portion is elastic.

3. The chemical vapor deposition apparatus according to claim 1, wherein: The electrode body is provided with a first threaded hole, and the top of the deposition chamber is provided with a second threaded hole corresponding to the first threaded hole. The lifting drive member includes a driving body and a screw connected to each other. The driving body can drive the screw to rotate around its own central axis. The length direction of the screw is parallel to the relative direction of the diffusion plate and the electrode body, and the screw is cooperatively connected to the first threaded hole and the second threaded hole, and the end of the screw away from the driving body is connected to an end of the first rod away from the second rod.

4. The chemical vapor deposition apparatus according to any one of claims 1 to 3, characterized in that: The cleaning device further includes a transmission seat, which is disposed in the interval space and connected to the plurality of first rod portions. The transmission seat is also connected to the driving end of the lifting drive member.

5. The chemical vapor deposition apparatus according to claim 4, characterized in that: The first rod portion is detachably connected to the transmission seat via a threaded fastener.

6. The chemical vapor deposition apparatus according to claim 4, characterized in that: The cleaning device includes a plurality of transmission seats and a plurality of lifting driving members, and each transmission seat is connected to a different lifting driving member.

7. The chemical vapor deposition apparatus according to claim 6, wherein: The diffusion plate includes a middle part and a peripheral part surrounding the outer circumference of the middle part. The multiple transmission seats include at least one first transmission seat and at least one second transmission seat. The cleaning rod connected to the first transmission seat can be correspondingly inserted into the diffusion hole provided in the middle part, and the cleaning rod connected to the second transmission seat can be correspondingly inserted into the diffusion hole provided in the peripheral part.

8. The chemical vapor deposition apparatus according to claim 7, wherein: The plurality of transmission seats include a plurality of first transmission seats, and the numbers of the cleaning rods connected to all the first transmission seats are different, or, among the plurality of first transmission seats, at least two of the first transmission seats are connected to the same number of cleaning rods.

9. The chemical vapor deposition apparatus according to claim 8, characterized in that: The plurality of transmission seats include a plurality of second transmission seats, and the number of cleaning rods connected to all the second transmission seats is different, or, among the plurality of second transmission seats, at least two of the second transmission seats are connected to the same number of cleaning rods.

10. The chemical vapor deposition apparatus according to claim 9, characterized in that: Among the multiple second transmission seats, the ratio of the number of cleaning rods connected to at least one second transmission seat to the number of diffusion holes provided in the outer part is smaller than the ratio of the number of cleaning rods connected to at least one first transmission seat to the number of diffusion holes provided in the middle part.

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