Bearing device for growth of cadmium zinc telluride crystal

Abstract

The utility model belongs to the technical field of crystal growth, and particularly relates to a bearing device for tellurium-zinc-cadmium crystal growth. The utility model discloses a bearing device for growth of tellurium-zinc-cadmium crystals. The bearing device mainly comprises a growth container and a bearing assembly, the growth container is arranged in the bearing assembly; the bearing assembly comprises a base, a connecting shaft and a heat dissipation device. The center of the top of the base sinks downwards; the connecting shaft is arranged in the top sunken area of the base; the diameter of the connecting shaft is consistent with the inner diameter of the base; the growth container is arranged in the heat dissipation device; the bottom of the heat dissipation device is attached to the base and the connecting shaft. The bearing device for the growth of the tellurium-zinc-cadmium crystal is beneficial to the dissipation of latent heat of crystallization generated in the growth process of the tellurium-zinc-cadmium crystal from the bottom, stabilizes a growth interface, eliminates the influence of temperature fluctuation in a heating furnace body on the growth of the crystal, and avoids polycrystals and twin crystals.

Description

Technical Field

[0001] The utility model belongs to the technical field of crystal growth, and in particular relates to a supporting device for growing cadmium zinc telluride crystals. Background Art

[0002] Cadmium zinc telluride (CZT) crystals are a type of II-VI compound semiconductor with excellent performance, and they have broad application prospects in nuclear radiation devices and nuclear medicine detection. CdZnTe crystal growth is generally divided into three stages: supercooling, nucleation, and growth. During the crystal growth stage, latent heat of crystallization is released, which affects the rate of crystal growth. However, CdZnTe crystals have poor thermophysical properties and low thermal conductivity, which makes it difficult to dissipate the latent heat of crystallization generated during crystal growth. At the same time, due to temperature fluctuations within the heating furnace, polycrystals are easily formed on the sidewalls during crystal growth. In existing technologies, although the support devices used for CdZnTe crystal growth can release the latent heat of crystallization, it is difficult to eliminate the impact of temperature fluctuations within the heating furnace on crystal growth. Utility Model Content

[0003] In response to the deficiencies of the prior art, the utility model provides a supporting device for the growth of cadmium zinc telluride crystals, which is beneficial for the dissipation of the crystallization latent heat generated during the growth of the cadmium zinc telluride crystals from the bottom, stabilizes the growth interface, eliminates the influence of temperature fluctuations in the heating furnace on crystal growth, and avoids the occurrence of polycrystals and twins.

[0004] In order to achieve the above-mentioned purpose, the utility model provides a supporting device for growing cadmium zinc telluride crystals, comprising a growth container and a supporting assembly; the growth container is arranged inside the supporting assembly; the supporting assembly includes a base, a connecting shaft and a heat dissipation device; the top center of the base is recessed downward, and the connecting shaft is placed in the recessed area at the top of the base; the diameter of the connecting shaft is consistent with the inner diameter of the base; the growth container is arranged inside the heat dissipation device; and the bottom of the heat dissipation device is in contact with the base and the connecting shaft.

[0005] A support device for growing cadmium zinc telluride crystals comprises a growth container and a support assembly. The growth container is used to grow the cadmium zinc telluride crystals. The support assembly comprises a base, a connecting shaft, and a heat sink. The connecting shaft is positioned in a recessed area at the top of the base. The diameter of the connecting shaft matches the inner diameter of the base, ensuring a tight fit between the two and enhancing the stability of the support assembly. The heat sink is positioned above the base and the connecting shaft and is also located outside the growth container. The heat sink secures the growth container, allowing the latent heat of crystallization generated during the growth of the cadmium zinc telluride crystals to dissipate from the bottom of the growth container, preventing the accumulation of latent heat of crystallization. The heat sink also reduces the impact of air convection within the heating furnace on the temperature of the outer wall of the growth container, preventing the formation of polycrystalline sidewalls during growth.

[0006] Furthermore, the heat dissipation device includes a heat conducting device, a transition device and an insulation device; the top of the heat conducting device is in contact with the bottom of the growth container, and the bottom is in contact with the connecting shaft; the heat conducting device is arranged in the transition device; the bottom of the transition device is in contact with the connecting shaft; the growth container is arranged in the transition device; the transition device is arranged in the insulation device; and the bottom of the insulation device is in contact with the base.

[0007] The heat dissipation device includes a heat conducting device, a transition device, and a heat insulating device. The heat conducting device is installed below the growth container, the transition device is installed outside the heat conducting device, and the heat insulating device is installed outside the transition device, with the two devices tightly fitting together. During the growth of CdZnTe crystals, latent heat of crystallization is generated. The thermal conductivity of the heat conducting device is higher than that of the transition device and the heat insulating device, allowing the latent heat of crystallization to dissipate from the bottom of the growth container, preventing the accumulation of latent heat of crystallization.

[0008] Furthermore, the top of the heat conducting device is vertically recessed downward to form a groove; the groove has a flat bearing surface; the growth container is arranged in the groove; and the bottom cross-section of the growth container is consistent with the bearing surface of the groove.

[0009] The top of the heat conducting device is vertically recessed to form a groove, the growth container is arranged in the groove, and the bottom cross-section of the growth container is consistent with the bearing surface of the groove, so that the two fit tightly and the growth container is more stably fixed on top of the heat conducting device.

[0010] Furthermore, a positioning ring is provided on the base; the bottom of the positioning ring is in contact with the base; and the inner diameter of the positioning ring is consistent with the outer diameter of the thermal insulation device.

[0011] The positioning ring is arranged above the base, and the inner diameter of the positioning ring is consistent with the outer diameter of the thermal insulation device. The thermal insulation device is fixed on the base through the positioning ring and is prevented from moving.

[0012] Furthermore, a slot is provided at the bottom of the thermal insulation device; the thermal insulation device is fitted with the connecting shaft through the slot.

[0013] The heat insulating device is fitted with the connecting shaft through the clamping groove, so that the heat insulating device and the connecting shaft are connected together.

[0014] Furthermore, the transition device includes an upper transition device and a lower transition device; the upper transition device and the lower transition device are connected; the upper transition device is fitted with the growth container; the lower transition device is fitted with the heat conduction device; and the bottom of the lower transition device is fitted with the connecting shaft.

[0015] The transition device includes an upper transition device and a lower transition device. The upper transition device and the lower transition device can be connected as one piece or fixedly connected. When fixedly connected, the upper transition device and the lower transition device can be disassembled for easy installation and disassembly.

[0016] Furthermore, the heat dissipation device further includes a positioning angle; the heat conducting device and the transition device are fitted together through the positioning angle; and the transition device and the heat insulating device are fitted together through the positioning angle.

[0017] The heat dissipation device also includes a positioning angle. The positioning angle of the heat conducting device and the positioning angle of the transition device are strictly aligned, and the heat conducting device and the transition device fit together; the positioning angle of the transition device and the positioning angle of the insulation device are strictly aligned, and the transition device and the insulation device fit together.

[0018] Furthermore, a lifting device and a rotating device are connected below the base.

[0019] The base is connected to a lifting and rotating mechanism below, allowing it to be raised and lowered, and rotated, meeting the varying temperature requirements of CdZnTe crystals during growth. Furthermore, this ability to raise and lower the base and rotate it allows the support device to be placed in furnaces using methods such as crucible drop growth, vertical gradient condensation, and mobile heater growth, broadening its applicability.

[0020] Furthermore, the thermal conductivity of the heat-conducting device is higher than the thermal conductivity of the transition device; and the thermal conductivity of the transition device is higher than the thermal conductivity of the insulation device.

[0021] The thermal conductivity of the heat conducting device is higher than that of the transition device, and the thermal conductivity of the transition device is higher than that of the insulation device, which can ensure that the latent heat of crystallization generated during the growth of the cadmium zinc telluride crystal is dissipated from the bottom of the growth container, avoiding the accumulation of latent heat of crystallization.

[0022] Furthermore, a heating furnace body is provided outside the heat dissipation device, and there is a gap between the inner wall of the heating furnace body and the outer wall of the heat dissipation device; there is a cavity inside the heating furnace body, and the base drives the growth container and the heat dissipation device to move up and down in the cavity inside the heating furnace body.

[0023] A heating furnace body is provided on the outside of the heat dissipation device, and the base can be raised and lowered, thereby driving the growth container and the heat dissipation device to move up and down in the cavity inside the heating furnace body to meet the temperature required for the growth process of the cadmium zinc telluride crystal.

[0024] Beneficial effects

[0025] 1. The support device for growing CdZnTe crystals in this utility model has a rational structural design. By designing a support assembly outside the growth container, it can stably support the growth container during the crystal growth process, thereby improving the temperature stability during the crystal growth process and changing the overall temperature field during the crystal growth process. During the crystal growth process, the main heat dissipation direction is the bottom of the crucible, thus avoiding the accumulation of latent heat of crystallization.

[0026] 2. The support device for CdZnTe crystal growth in this utility model houses the entire growth container within the insulation and transition devices, minimizing the impact of air convection within the heating furnace on the temperature of the outer wall of the growth container and preventing the formation of polycrystals on the sidewalls during growth.

[0027] 3. The support device for growing CdZnTe crystals of the present invention has a base that can be raised, lowered, and rotated, allowing the support device to be placed in a crucible-drop growth furnace, a vertical gradient condensation growth furnace, a mobile heater growth furnace, and the like to grow CdZnTe crystals, thereby increasing the versatility of the support device's application. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 Schematic diagram of the structure of the support device used for growing cadmium zinc telluride crystals in Example 1;

[0029] Figure 2 Schematic diagram of the structure of the heat conduction device;

[0030] Figure 3 is a structural diagram of the transition device;

[0031] Figure 4 Schematic diagram of the structure of the support device used for growing cadmium zinc telluride crystals in Example 2.

[0032] In the accompanying drawings: 1. Growth container; 2. Support assembly; 21. Base; 22. Connecting shaft; 23. Heat dissipation device; 24. Positioning ring; 231. Heat conduction device; 232. Transition device; 233. Insulation device; 234. Positioning angle; 2311. Groove; 2321. Upper transition device; 2322. Lower transition device; 2331. Card slot. DETAILED DESCRIPTION

[0033] Example 1

[0034] like Figure 1 A support device for growing cadmium zinc telluride crystals is shown, comprising a growth container 1 and a support assembly 2; the growth container 1 is disposed inside the support assembly 2; the support assembly 2 comprises a base 21, a connecting shaft 22 and a heat sink 23; the base 21 and the connecting shaft 22 are made of stainless steel, the top center of the base 21 is recessed downward, and the connecting shaft 22 is placed in the recessed area at the top of the base 21; the diameter of the connecting shaft 22 is consistent with the inner diameter of the base 21; the growth container 1 is disposed inside the heat sink 23; the bottom of the heat sink 23 is in contact with the base 21 and the connecting shaft 22.

[0035] A support device for growing cadmium zinc telluride crystals comprises a growth vessel 1 and a support assembly 2. The growth vessel 1 is used to grow cadmium zinc telluride crystals. The support assembly 2 comprises a base 21, a connecting shaft 22, and a heat sink 23. The connecting shaft 22 is positioned in a recessed area at the top of the base 21. The diameter of the connecting shaft 22 matches the inner diameter of the base 21, and the two fit tightly together, improving the stability of the support assembly 2. The heat sink 23 is positioned above the base 21 and the connecting shaft 22 and is also disposed outside the growth vessel 1. The heat sink 23 secures the growth vessel 1, allowing the latent heat of crystallization generated during the growth of the cadmium zinc telluride crystals to dissipate from the bottom of the growth vessel 1, thereby preventing the accumulation of latent heat of crystallization. The heat sink 23 also reduces the impact of air convection within the heating furnace on the temperature of the outer wall of the growth vessel 1, thereby preventing the formation of polycrystals on the sidewalls during growth.

[0036] The heat dissipation device 23 includes a heat conducting device 231, a transition device 232 and an insulation device 233; the top of the heat conducting device 231 is in contact with the bottom of the growth container 1, and the bottom is in contact with the connecting shaft 22; the heat conducting device 231 is arranged in the transition device 232; the bottom of the transition device 232 is in contact with the connecting shaft 22; the growth container 1 is arranged in the transition device 232; the transition device 232 is arranged in the insulation device 233; the bottom of the insulation device 233 is in contact with the base 21.

[0037] The heat sink 23 includes a heat conductor 231, a transition device 232, and an insulation device 233. The heat conductor 231 is mounted below the growth container 1, the transition device 232 is mounted outside the heat conductor 231, and the insulation device 233 is mounted outside the transition device 232, with the two devices tightly fitted together. During the growth of CdZnTe crystals, latent heat of crystallization is generated. The thermal conductivity of the heat conductor 231 is higher than that of the transition device 232 and the insulation device 233, allowing the latent heat of crystallization to dissipate from the bottom of the growth container 1, preventing the accumulation of latent heat of crystallization.

[0038] like Figure 2 As shown, the top of the heat conducting device 231 is vertically recessed downward to form a groove 2311 ; the groove 2311 has a flat bearing surface; the growth container 1 is disposed in the groove 2311 ; the bottom cross-section of the growth container 1 is consistent with the bearing surface of the groove 2311 .

[0039] The top of the heat-conducting device 231 is vertically recessed to form a groove 2311. The growth container 1 is arranged in the groove 2311, and the bottom cross-section of the growth container 1 is consistent with the bearing surface of the groove 2311, so that the two fit tightly, and the growth container 1 is more stably fixed above the heat-conducting device 231.

[0040] like Figure 1As shown, a positioning ring 24 is provided on the base 21 ; the bottom of the positioning ring 24 is in contact with the base 21 ; the inner diameter of the positioning ring 24 is consistent with the outer diameter of the insulation device 233 .

[0041] The positioning ring 24 is disposed above the base 21 , and has an inner diameter consistent with an outer diameter of the insulation device 233 . The positioning ring 24 fixes the insulation device 233 on the base 21 and prevents the insulation device 233 from moving.

[0042] A slot 2331 is provided at the bottom of the heat insulating device 233 ; the heat insulating device 233 is fitted with the connecting shaft 22 via the slot 2331 .

[0043] The heat insulating device 233 is fitted with the connecting shaft 22 through the slot 2331 , thereby connecting the heat insulating device 233 and the connecting shaft 22 together.

[0044] like Figure 3 As shown, the transition device 232 includes an upper transition device 2321 and a lower transition device 2322; the upper transition device 2321 and the lower transition device 2322 are connected; the upper transition device 2321 is fitted with the growth container 1; the lower transition device 2322 is fitted with the heat conducting device 231; and the bottom of the lower transition device 2322 is fitted with the connecting shaft 22.

[0045] The transition device 232 includes an upper transition device 2321 and a lower transition device 2322. The upper transition device 2321 and the lower transition device 2322 are connected by pins. The upper transition device 2321 and the lower transition device 2322 are detachable for easy installation and disassembly.

[0046] like Figure 1 As shown, the heat dissipation device 23 further includes a positioning angle 234 ; the heat conducting device 231 and the transition device 232 are fitted together through the positioning angle 234 ; and the transition device 232 and the heat insulating device 233 are fitted together through the positioning angle 234 .

[0047] The heat dissipation device 23 also includes a positioning angle 234. The heat conducting device 231 protrudes outward to form the positioning angle 234, and the transition device 232 is recessed inward to form the positioning angle 234. The positioning angle 234 is strictly aligned, and the heat conducting device 231 and the transition device 232 fit together; the transition device 232 is recessed inward to form the positioning angle 234, and the heat insulating device 233 protrudes outward to form the positioning angle 234. The positioning angle 234 is strictly aligned, and the transition device 232 and the heat insulating device 233 fit together.

[0048] A lifting device and a rotating device are connected below the base 21 .

[0049] The base 21 is connected to a lifting and rotating mechanism below, allowing it to be raised and lowered and rotated to meet the varying temperature requirements of CdZnTe crystals during growth. Furthermore, this ability to raise and lower the base 21 and rotate it allows it to be placed in a variety of furnaces, including crucible-drop growth furnaces, vertical gradient condensation furnaces, and mobile heater growth furnaces, to grow CdZnTe crystals, thus increasing its versatility.

[0050] The heat conducting device 231 is made of stainless steel, the transition device 232 is made of corundum, and the heat insulating device 233 is made of mullite. The thermal conductivity of the heat conducting device 231 is higher than that of the transition device 232; the thermal conductivity of the transition device 232 is higher than that of the heat insulating device 233.

[0051] The heat conducting device 231 is made of stainless steel, the transition device 232 is made of corundum, and the heat insulating device 233 is made of mullite. The thermal conductivity of the heat conducting device 231 is higher than that of the transition device 232, and the thermal conductivity of the transition device 232 is higher than that of the heat insulating device 233. This ensures that the latent heat of crystallization generated during the growth of the cadmium zinc telluride crystal is dissipated from the bottom of the growth container 1, thereby avoiding the accumulation of latent heat of crystallization.

[0052] A heating furnace body is provided outside the heat dissipation device 23, and there is a gap between the inner wall of the heating furnace body and the outer wall of the heat dissipation device 23; there is a cavity inside the heating furnace body, and the base 21 drives the growth container 1 and the heat dissipation device 23 to move up and down in the cavity inside the heating furnace body.

[0053] A heating furnace is provided outside the heat sink 23, and the base 21 can be raised and lowered, thereby driving the growth container 1 and the heat sink 23 to move up and down in the cavity inside the heating furnace to meet the temperature required for the CdZnTe crystal growth process.

[0054] Example 2

[0055] like Figure 4 As shown, the difference between this embodiment and embodiment 1 is that the structure of the positioning angle 234 is simplified.

[0056] By simplifying the structure of the positioning angle 234, the heat conducting device 231, the transition device 232 and the heat insulating device 233 are integrally formed, which can reduce costs, facilitate installation, and is suitable for use in large-scale production.

[0057] Example 3

[0058] The difference between this embodiment and the first embodiment is that the base 21 , the connecting shaft 22 and the heat conducting device 231 are made of silicon carbide ceramics.

[0059] The base 21 , the connecting shaft 22 and the heat conducting device 231 are made of silicon carbide ceramics, which has excellent oxidation resistance, good corrosion resistance, high wear resistance and low friction coefficient.

Claims

1. A support device for growing cadmium zinc telluride crystals, characterized by: The invention comprises a growth container (1) and a supporting assembly (2); the growth container (1) is arranged inside the supporting assembly (2); the supporting assembly (2) comprises a base (21), a connecting shaft (22) and a heat dissipation device (23); the top center of the base (21) is recessed downward, and the connecting shaft (22) is placed in the recessed area of ​​the top of the base (21); the diameter of the connecting shaft (22) is consistent with the inner diameter of the base (21); the growth container (1) is arranged inside the heat dissipation device (23); and the bottom of the heat dissipation device (23) is in contact with the base (21) and the connecting shaft (22).

2. The support device for growing CdZnTe crystals according to claim 1, characterized in that: The heat dissipation device (23) comprises a heat conducting device (231), a transition device (232) and a heat insulating device (233); the top of the heat conducting device (231) is in contact with the bottom of the growth container (1), and the bottom is in contact with the connecting shaft (22); the heat conducting device (231) is arranged in the transition device (232); the bottom of the transition device (232) is in contact with the connecting shaft (22); the growth container (1) is arranged in the transition device (232); the transition device (232) is arranged in the heat insulating device (233); and the bottom of the heat insulating device (233) is in contact with the base (21).

3. The support device for growing CdZnTe crystals according to claim 2, characterized in that: The top of the heat conducting device (231) is vertically recessed downward to form a groove (2311); the groove (2311) has a flat bearing surface; the growth container (1) is arranged in the groove (2311); and the bottom cross-section of the growth container (1) is consistent with the bearing surface of the groove (2311).

4. The support device for growing CdZnTe crystals according to claim 2, wherein: A positioning ring (24) is provided on the base (21); the bottom of the positioning ring (24) is in contact with the base (21); and the inner diameter of the positioning ring (24) is consistent with the outer diameter of the thermal insulation device (233).

5. The supporting device for growing CdZnTe crystals according to claim 2, characterized in that: A clamping slot (2331) is provided at the bottom of the heat insulating device (233); the heat insulating device (233) is fitted with the connecting shaft (22) via the clamping slot (2331).

6. The supporting device for growing CdZnTe crystals according to claim 2, characterized in that: The transition device (232) comprises an upper transition device (2321) and a lower transition device (2322); the upper transition device (2321) and the lower transition device (2322) are connected; the upper transition device (2321) is fitted with the growth container (1); the lower transition device (2322) is fitted with the heat conducting device (231); and the bottom of the lower transition device (2322) is fitted with the connecting shaft (22).

7. The supporting device for growing CdZnTe crystals according to claim 2, characterized in that: The heat dissipation device (23) further comprises a positioning angle (234); the heat conducting device (231) and the transition device (232) are fitted together via the positioning angle (234); and the transition device (232) and the heat insulating device (233) are fitted together via the positioning angle (234).

8. The supporting device for growing CdZnTe crystals according to claim 1, characterized in that: A lifting device and a rotating device are connected below the base (21).

9. The supporting device for growing CdZnTe crystals according to claim 2, characterized in that: The thermal conductivity of the heat conducting device (231) is higher than the thermal conductivity of the transition device (232); and the thermal conductivity of the transition device (232) is higher than the thermal conductivity of the heat insulating device (233).

10. The supporting device for growing CdZnTe crystals according to claim 1, characterized in that: A heating furnace body is provided outside the heat dissipation device (23), and a gap exists between the inner wall of the heating furnace body and the outer wall of the heat dissipation device (23); a cavity exists inside the heating furnace body, and the base (21) drives the growth container (1) and the heat dissipation device (23) to move up and down in the cavity inside the heating furnace body.

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