Gas spray header and gas phase treatment device

Abstract

The embodiment of the utility model discloses a gas spray header and a gas phase treatment device. The gas spray header comprises a first inflation chamber, a second inflation chamber and a third inflation chamber, comprising an air inlet; the gas inlet is configured to input first gas; the second inflation chamber is communicated with the first inflation chamber; the first pipeline is located in the second inflation chamber, and the first pipeline is configured to input second gas; the first pipeline continuously and spirally extends on the first plane, and a gap between two circles of adjacent spiral lines is communicated with the first inflation chamber; the first plane intersects with the first direction; the sealing plate is located on the side, away from the first inflation chamber in the first direction, of the second inflation chamber. The sealing plate is fixedly connected with the side, away from the first inflation chamber, of the second inflation chamber. The first nozzle penetrates through the sealing plate; the first nozzle is communicated with the first pipeline; the second nozzle penetrates through the sealing plate; and the second nozzle is communicated with a gap between two circles of adjacent spiral lines of the first pipeline.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the field of semiconductor technology, and in particular to a gas shower head and a gas phase processing device. Background Art

[0002] In semiconductor gas processing processes, such as vapor deposition and vapor phase epitaxy, the wafer can be placed in a process chamber, and one or more process gases can be introduced into the surface of the wafer to perform gas treatment on the surface of the wafer or to deposit or epitaxially generate a film layer on the surface of the wafer. When it is necessary to supply a mixed process gas to the process chamber, the gas can be mixed in a gas mixing pipe outside the process chamber, and then input into the process chamber after mixing. The process gas can be added with a dilution gas or a carrier gas to achieve the gas concentration required for the process. In order to ensure the mixing uniformity and stability of the diluted process gas, the process gas and the dilution gas can be mixed at a large flow rate. A part of the gas enters the process chamber to participate in the process, while most of the gas is discharged through the exhaust pipe, and the gas utilization rate is low. There is still some room for improvement in the gas mixing components of the gas phase treatment device. Utility Model Content

[0003] In view of this, embodiments of the present disclosure provide a gas shower head and a gas phase processing device.

[0004] According to some aspects of the embodiments of the present disclosure, a gas shower head is provided, comprising: a first air-filled chamber; comprising an air inlet; the air inlet is configured to input a first gas; a second air-filled chamber, interconnected with the first air-filled chamber; a first pipe, located in the second air-filled chamber, the first pipe being configured to input a second gas; the first pipe extending continuously in a spiral on a first plane, and the gap between two adjacent spirals is connected to the first air-filled chamber; the first plane intersects with a first direction; a sealing plate, located on a side of the second air-filled chamber away from the first air-filled chamber in the first direction; the sealing plate is fixedly connected to a side of the second air-filled chamber away from the first air-filled chamber; a first nozzle, passing through the sealing plate; the first nozzle is connected to the first pipe; a second nozzle, passing through the sealing plate; the second nozzle is connected to the gap between two adjacent spirals of the first pipe.

[0005] In some embodiments, the gas shower head further includes: a second pipe located in the second plenum chamber, the second pipe being configured to input a third gas; the second pipe continuously extending in a spiral on the first plane, and the second pipe being embedded in a gap of the first pipe.

[0006] In some embodiments, the gas shower head further includes: an air inlet pipe, which is sleeved in the air inlet; the air inlet pipe extends along the first direction and is connected to the first pipe; the air inlet pipe is configured to input the second gas, and the gap between the air inlet pipe and the air inlet is configured to input the first gas.

[0007] In some embodiments, the gas shower head further includes: a plurality of gas distribution pipes located in the first gas-filled chamber; the gas distribution pipes extend in a direction parallel to the first plane, and the gas distribution pipes are connected to the air inlet pipe at one end of the extension direction; the gas distribution pipes have a plurality of intersections with the first pipe, and the gas distribution pipes are connected to the first pipe at at least one of the intersections.

[0008] In some embodiments, the first inflatable chamber includes: a first sub-inflatable chamber and a second sub-inflatable chamber arranged and connected in the first direction, the second sub-inflatable chamber is located between the first sub-inflatable chamber and the second inflatable chamber, and the plurality of gas distribution pipes are located in the second sub-inflatable chamber; the gas shower head further includes: a diffuser plate including a plurality of through holes; the diffuser plate is located between the first sub-inflatable chamber and the second sub-inflatable chamber, and the through holes connect the first sub-inflatable chamber and the second sub-inflatable chamber.

[0009] In some embodiments, a plurality of the first nozzles are arranged along a first spiral, and a plurality of the second nozzles are arranged along a second spiral; and the second spiral is embedded in the gaps of the first spiral.

[0010] In some embodiments, the first nozzle includes: a first opening and a second opening arranged opposite to each other in the first direction, the first opening being connected to the first pipe; and a contraction portion located between the first opening and the second opening, the contraction portion being connected to the first opening and the second opening; the diameter width of the contraction portion is smaller than the diameter width of the first opening, and the diameter width of the contraction portion is smaller than the diameter width of the second opening; the diameter width of the second opening is greater than or equal to the diameter width of the first opening.

[0011] In some embodiments, the first pipe includes a first base point, and the first pipe extends spirally with the first base point as the starting point; two adjacent spirals of the first pipe have a first pitch in the second direction; the first pitch between any two adjacent spirals of the first pipe is equal.

[0012] In some embodiments, a cross-sectional shape of the interior space of the first inflatable chamber in the first plane includes a circle, and the first base point overlaps with a center of the circle in the first direction.

[0013] According to some aspects of the embodiments of the present disclosure, a gas phase processing device is provided, including: a process chamber; and a gas shower head as described above, at least a portion of the gas shower head is located within the process chamber; a gas supply component, connected to the gas shower head through a gas supply pipe, the gas supply component providing at least a first gas and a second gas to the gas shower head; a wafer carrier plate, located in the process chamber; the wafer carrier plate is configured to carry a wafer, and the gas shower head is located above the wafer carrier plate.

[0014] The embodiment of the present disclosure provides a gas shower head, which can be applied to a gas phase treatment device, comprising a first gas-filled chamber and a second gas-filled chamber that are interconnected, wherein the first gas-filled chamber is provided with an air inlet configured to input a first gas; a first pipe is provided in the second gas-filled chamber, and the first pipe continuously spirally extends on a first plane intersecting in a first direction, forming a continuous spiral pipe formed by connecting multiple circles of mutually spaced arcs or mutually spaced short spirals, the gap between two adjacent spirals of the spiral pipe (first pipe) is connected to the first gas-filled chamber, and the first pipe is configured to input a second gas; a sealing gas is provided on the side of the second gas-filled chamber away from the first gas-filled chamber. The plate closes the second inflation chamber and is provided with a first nozzle and a second nozzle that penetrate the sealing plate; the first nozzle is connected to the first pipe, and the second nozzle is connected to the gap between two adjacent spiral circles of the first pipe; the first gas is input into the inflation chamber from the air inlet and flows into the second inflation chamber, and flows into the second nozzle through the gap of the first pipe and flows out; the second gas is input from the first pipe and flows out from the first nozzle and then mixes with the second gas; the spiral first pipe can improve the dispersion of the second gas, and the spiral gap of the first pipe can improve the dispersion of the first gas, thereby improving the mixing uniformity of the first gas and the second gas after leaving the gas shower head. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 is a schematic diagram of an exemplary gas phase processing device according to an embodiment of the present disclosure;

[0016] Figures 2 to 10 FIG. 1 is a schematic diagram of an exemplary gas showerhead according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0017] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the specific embodiments described herein. Instead, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0018] It should be understood that when an element or layer is referred to as being “on,” “adjacent,” “connected to,” or “coupled to” another element or layer, it can be directly on, adjacent, connected, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being “directly on,” “directly adjacent to,” “directly connected to,” or “directly coupled to” another element or layer, there are no intervening elements or layers present.

[0019] In some semiconductor gas processing devices or gas processing tools, such as but not limited to those used for vapor deposition, vapor phase epitaxy, vapor phase diffusion, and doping, a mixture of multiple process gases may be used to process wafers, such as depositing or epitaxially growing a film on the wafer surface, oxidizing the wafer surface, or performing surface treatments such as activation on the wafer surface. Taking some epitaxial processing tools as an example, before introducing process gases into the process chamber, the process gases are first mixed in a pipeline outside the process chamber. The mixed gas is then introduced into the process chamber to perform epitaxial processing on the wafers. For example, epitaxial dopant gases such as B2H6, PH3, etc. are mixed with diluent gases (or, carrier gases) such as H2, N2, etc.) in the pipeline before entering the process chamber. The natural diffusion mixing of the process gases and / or carrier gases in the pipeline in a linear pipeline pattern requires a high-flow, high-velocity gas source to ensure mixing uniformity that meets process requirements, resulting in low process gas utilization, increased factory gas supply pressure, and increased process costs. In view of this, in order to uniformly distribute the process gas on the wafer surface and to better mix multiple gases, the embodiments of the present disclosure provide a gas shower head that can be applied to a gas processing device, and a gas processing device, wherein a gas supply device supplies gas into the gas shower head, and the gas shower head disperses the gas and then sprays the gas onto the wafer surface, thereby improving the dispersion uniformity of the multi-component gas and improving the mixing uniformity of the gas after exiting the gas shower head.

[0020] According to some aspects of the embodiments of the present disclosure, Figure 1 A schematic diagram of a gas phase processing device 10 is shown as an example. The gas phase processing device 10 may include but is not limited to a gas phase deposition device and an epitaxial device. Figure 1 As shown, the gas phase processing device 10 may include at least:

[0021] The process chamber 101 is configured to accommodate the wafer 200 and perform a process on the wafer 200;

[0022] The wafer carrier 102 is configured to carry the wafer 200. The wafer carrier 102 may fix the wafer 200 by methods including, but not limited to, electrostatic adsorption, vacuum adsorption, or mechanical clamping of the edge of the wafer 200. The wafer carrier 102 may also be provided with heating and heat dissipation components to adjust the temperature of the wafer 200 according to the requirements of different process nodes.

[0023] The gas shower head 110 is disposed within the process chamber 101 and is located above the wafer carrier 102. The gas shower head 110 is disposed on the upper wall of the process chamber 101, which is provided with a mounting hole. The ventilation pipe 302 of the gas shower head 110 can be installed in the mounting hole and extend out of the process chamber 101 through the mounting hole. The ventilation pipe 302 is used to communicate with the gas supply assembly 300 outside the process chamber 101 to provide gas supply for the gas shower head 110. The outer tube wall of the ventilation pipe 302 can provide mounting support for the gas shower head 110, and is fixed to the mounting hole in the upper wall of the process chamber 101 with a flange and a sealing ring. Multiple sub-pipes can be configured within the ventilation pipe 302, and each sub-pipe is connected to a gas source of the gas supply assembly 300 through a gas supply pipe 301. In some embodiments, the ventilation pipe 302 may include a main pipe and at least one sub-pipe arranged inside the main pipe. A gas is input into the sub-pipe, and a gas can be introduced into the gap between the sub-pipe and the main pipe to achieve multiple gas supplies while reducing the space occupied by the pipe.

[0024] Gas supply assembly 300 can be a gas storage device comprising multiple compressed gas cylinders, or it can be a secondary gas distribution device connected from the factory to the machine. The gas supply port of gas supply assembly 300 can be equipped with a gas flow controller feedback and electronically controlled gas output flow, such as, but not limited to, a mass flow controller (MFC).

[0025] In some embodiments, the gas showerhead 110 can be supplied with multiple gases, which are dispersed in the gas showerhead 110 and mixed after flowing out of the showerhead. The mixed gases are dispersed on the surface of the wafer 200 to perform deposition and epitaxial processes. Figure 1 and Figure 2 As shown in the example, a gas shower head 110 is provided. The gas shower head 110 may include:

[0026] The first plenum chamber 120 includes an air inlet 121 ; the air inlet 121 is configured to input a first gas;

[0027] The second plenum chamber 130 is disposed along a first direction and communicates with the first plenum chamber 120 ; the first direction may be a thickness direction of the wafer 200 , or a vertical direction, such as the z direction in the figure; the x direction may be a second direction; and the y direction may be a third direction;

[0028] The first conduit 131 is located in the second plenum 130 and is configured to input the second gas. The first conduit 131 extends continuously in a spiral on a first plane, and the gap between two adjacent spiral turns is connected to the first plenum 120. The first plane intersects the z-direction and may be an xoy plane. The shape of the first conduit 131 or the cross-sectional shape of the first conduit 131 in the zoy plane is a continuous spiral, which may include equidistant or non-equidistant spirals. The equidistant spirals may be Archimedean spirals or other types of spirals.

[0029] The sealing plate 141 is located on a side of the second inflatable chamber 130 away from the first inflatable chamber 120 in the z direction; the sealing plate 141 is fixedly connected to the side of the second inflatable chamber 130 away from the first inflatable chamber 120;

[0030] The first nozzle 151 penetrates the sealing plate 141 and is connected to the first pipe 131;

[0031] The second nozzle 152 penetrates the sealing plate 141 ; the second nozzle 152 is communicated with the gap between two adjacent spirals of the first pipe 131 .

[0032] The first plenum chamber 120 can be fixedly connected to the second plenum chamber 130 by means of flanges, clamps, etc., or the outer cavity walls can be welded to each other to form the gas-containing cavity of the gas shower head 110. The first plenum chamber 120 can be a cavity with an arc-shaped top, and the second plenum chamber 130 can be a cylindrical cavity. The air inlet 121 is located at the top of the first plenum chamber 120 and is connected to the interior of the first plenum chamber 120. The air inlet 121 can be cylindrical and used to connect with the gas source or the gas supply assembly 300 to ventilate the first plenum chamber 120; or a pipe can be installed inside the air inlet 121, and a gas can be introduced into the pipe, and other gases can be introduced into the gap between the pipe and the air inlet 121.

[0033] Figure 2 FIG. 1 illustrates a partially enlarged schematic diagram of the gas showerhead 110 according to an embodiment of the present disclosure. Figure 3 FIG1 illustrates an enlarged schematic diagram of the spiral first pipe 131 according to an embodiment of the present disclosure. Figure 2 As shown, an air inlet pipe 122 may be provided in the air inlet 121. The air inlet pipe 122 extends along the z direction and communicates with the center of the first pipe 131 for supplying air to the first pipe 131. The gap between the air inlet pipe 122 and the air inlet 121 is used to input the first gas into the first plenum chamber 120. Figure 3As shown, the outer contour of the first conduit 131 on the xoy plane is a spiral shape, which can be an Archimedean spiral or other irregular spiral, which extends outward in a periodic continuous spiral from the first base point O1 as the starting point to form a continuous spiral. Each turn of the spiral can be regarded as a plurality of arc segments with different circle centers connected end to end. In the x direction or y direction or other directions parallel to the xoy plane, there is a first pitch between two adjacent spirals or spirals, and the first pitches at different positions of the first conduit 131 can be the same or different. Figure 2 The pitches D1 and D2 shown in FIG. D1 and D2 may be equal or unequal. When D1 equals D2, the shape of the first conduit 131 is an Archimedean spiral. The second gas within the first conduit 131 can be supplied via an inlet conduit 122 extending along the z-direction. The inlet conduit 122 can connect to any location within the first conduit 131, such as the first base point O1 or the first center point O1 of the first conduit 131, to improve the flow uniformity of the second gas within the first conduit 131. Alternatively, other conduits can be provided to connect to the endpoints of the outermost spiral of the first conduit 131 to supply the second gas to the first conduit 131.

[0034] Reference Figure 2 and Figure 3 As shown, the first pipe 131 is not arranged in a tight spiral when it is extended spirally. There is a gap between two adjacent spiral turns for circulating or diffusing the first gas from the first inflation chamber 120. At this time, the first pitch of the first pipe 131 is greater than 0, such as D1 is greater than 0. The sealing plate 141 is located at the bottom of the second inflation chamber 130 and on the side of the first pipe 131 away from the air inlet 121. The sealing plate 141 is fixedly connected to the side wall of the second inflation chamber 130, including but not limited to welding, flange or clamp fixation. The sealing plate 141 has a through hole for spraying gas, and the through hole serves as a nozzle; the through hole corresponding to the first pipe 131 and connected to the first pipe 131 serves as a first nozzle 151; the through hole corresponding to the gap between the two adjacent spiral turns of the first pipe 131 serves as a second nozzle 152, and the second nozzle 152 is connected to the gap between the first pipe 131. Alternatively, the through hole of the sealing plate 141 can be used as the mounting hole of the first nozzle 151 and the second nozzle 152, and the first nozzle 151 and the second nozzle 152 are fixedly installed in the corresponding mounting holes for guiding gas. Taking the first nozzle 151 as an example, the first nozzle 151 can be a straight tube nozzle or a variable diameter nozzle, such as a variable diameter nozzle with a large diameter at one end and a small diameter at the other end, or a variable diameter nozzle with both ends having a larger diameter than the middle part, such as a Laval nozzle or a Laval nozzle, to obtain a higher gas outflow speed. The first pipe 131 is a spiral pipe, and the multiple first nozzles 151 corresponding to the first pipe 131 can be arranged in a spiral shape; the gap between two adjacent turns of the spiral of the first pipe 131 is also spiral, and the multiple second nozzles 152 can be arranged in a spiral shape.

[0035] Combine Figure 1 and Figure 2 As shown, the first gas is introduced through the gap between the gas inlet 121 and the gas inlet pipe 122, and is sequentially introduced into the first plenum 120 in the direction of the arrow in the figure, where it diffuses and fills the first plenum 120. The first gas diffuses from the first plenum 120 into the second plenum 130, diffuses through the gaps in the first pipe 131, and is introduced into the second nozzle 152 along the gaps in the first pipe 131. The first gas flows out of the second nozzle 152 and sprays onto the wafer 200. The first gas is transmitted through the spiral gaps in the first pipe 131 for more complete diffusion. The second gas can be introduced through the gas inlet pipe 122 and then into the first pipe 131. It flows through the first pipe 131 and flows into the second nozzle 152 for spraying. The second gas is transmitted through the spiral first pipe 131 for more complete diffusion.

[0036] The first gas diffuses through the gap area between the first inflation chamber 120 and the first pipe 131 and is transmitted to the second nozzle 152, and can be redispersed through multiple second nozzles 152 arranged in a spiral shape, thereby increasing the dispersion of the first gas; the second gas diffuses through the air inlet pipe 122 and the first pipe 131 and is transmitted to the first inflation chamber 120 and the first pipe 131, and can be redispersed through multiple first nozzles 151 arranged in a spiral shape, thereby increasing the dispersion of the second gas; after leaving, the first gas and the second gas are mixed near the sealing plate 141. Based on the better dispersion of the first pipe 131 and each nozzle, the first gas and the second gas can be mixed at a near molecular level, thereby improving the uniformity of gas mixing and improving the process yield of deposition or epitaxy of the wafer 200.

[0037] In some embodiments, reference Figure 3 As shown, the first pipe 131 includes a first base point O1, and the first pipe 131 spirally extends from the first base point O1 as the starting point; two adjacent spirals of the first pipe 131 have a first pitch in the x-direction; the first pitches between any two adjacent spirals of the first pipe 131 are equal, such as when the pitch D1 is equal to the pitch D2, the shape of the first pipe 131 can be an Archimedean spiral.

[0038] In some embodiments, the cross-sectional shape of the interior space of the first plenum 120 in the xoy plane comprises a circle, and the first base point O1 overlaps with the center of the circle in the z direction. The outer contours of the first plenum 120 and the second plenum 130 in the xoy plane are circular, and the centers of the two plenums can overlap in the z direction to improve structural stability and gas diffusion uniformity. The first conduit 131 can be disposed in the middle of the second plenum 130, and the first base point O1 of the first conduit 131 overlaps or substantially overlaps with the centers of the first and second plenums 120, 130.

[0039] In some embodiments, reference Figure 4 As shown, the gas showerhead 110 further includes:

[0040] The second pipe 132 is located in the second plenum chamber 130 and is configured to input the third gas. The second pipe 132 extends continuously in a spiral on the xoy plane and is embedded in the gap of the first pipe 131. Figure 4 The dotted spiral in the figure indicates that the first pipe 131 and the second pipe 132 can be arranged as conjugate spirals. The first pipe 131 can be connected or disconnected to allow gases of different components to be introduced separately; when the first pipe 131 and the second pipe 132 are connected, the same gas can be introduced, and the second gas and the third gas are the same; or the third gas in the second pipe 132 is a dilution gas, the second gas in the first pipe 131 is a process gas, and the dilution gas is an inert gas that does not participate in the reaction of the wafer 200 and is used to adjust and dilute the concentration of the second gas. Exemplarily, the spiral center point of the first pipe 131 can be connected to the air inlet pipe 122, and the spiral center point of the second pipe 132 can be connected to the air inlet pipe 122, thereby achieving the connection between the first pipe 131 and the second pipe 132; the connection between the first pipe 131 and the second pipe 132 is conducive to increasing the number of spiral distribution turns of the pipes and improving the diffusion uniformity of the gas.

[0041] In some embodiments, reference Figure 1 and Figure 2 As shown, the gas showerhead 110 further includes:

[0042] The air intake pipe 122 is sleeved in the air intake port 121; the air intake pipe 122 extends along the z direction and is connected to the first pipe 131, such as the first base point O1 of the first pipe 131;

[0043] The air inlet pipe 122 is configured to input the second gas, and the gap between the air inlet pipe 122 and the air inlet 121 is configured to input the first gas.

[0044] In some embodiments, reference Figure 5The gas shower head 110 is a partially enlarged schematic diagram shown in FIG. 1 , and the gas shower head 110 further includes:

[0045] Multiple air distribution pipes 123 are located in the first inflation chamber 120; the air distribution pipes 123 extend in a direction parallel to the xoy plane, and the air distribution pipes 123 are connected to the air intake pipe 122 at one end of their extension direction; the air distribution pipes 123 and the first pipe 131 have multiple intersections, and the air distribution pipes 123 are connected to the first pipe 131 at at least one intersection.

[0046] In order to improve the uniform gas supply from the gas supply pipe to the first pipe 131 and reduce the uneven gas distribution at different spiral positions of the first pipe 131, multiple gas distribution pipes 123 can be set to connect the air intake pipe 122 and the first pipe 131, so as to distribute the second gas input from the air intake pipe 122 more evenly to each spiral circle of the first pipe 131; the multiple gas distribution pipes 123 are located between the air intake pipe 122 and the first pipe 131 in the z direction. The multiple gas distribution pipes 123 can be as follows Figure 6 The rice-shaped arrangement shown, Figure 6 The straight pipes in the figure are gas distribution pipes 123. Eight gas distribution pipes 123 are shown as examples in the figure, and there is no limit to the number of gas distribution pipes 123. Taking one gas distribution pipe 123 as an example, the gas distribution pipe 123 has two opposite ends set in its extension direction. One end is connected to the air intake pipe 122 and the first base point O1 of the first pipe 131, and the other end can be connected to the part of the first pipe 131 that intersects with it; except for the first base point O1 of the first pipe 131, the gas distribution pipe 123 can have multiple other intersections with the first pipe 131, and the gas distribution pipe 123 can be connected to the first pipe 131 at the intersections. The air intake pipe 122 can input the second gas into the spirals of different turns of the first pipe 131 at the same or substantially the same gas flow rate through multiple gas distribution pipes 123, thereby improving the dispersion uniformity of the second gas in different areas of the first pipe 131.

[0047] In some embodiments, the air distribution pipe 123 crosses the first pipe 131. The air distribution pipe 123 ventilates the first pipe 131 while being fixedly connected to the first pipe 131. The air distribution pipe 123 can provide mechanical support for the spiral first pipe 131 and reduce deformation of the first pipe 131.

[0048] In some embodiments, reference Figure 5 and Figure 7 As shown, the first plenum chamber 120 includes:

[0049] A first sub-plenum chamber 124 and a second sub-plenum chamber 125 are provided and connected in the z direction, the second sub-plenum chamber 125 is located between the first sub-plenum chamber 124 and the second plenum chamber 130, and a plurality of gas distribution pipes 123 are located in the second sub-plenum chamber 125; the first sub-plenum chamber 124 and the second sub-plenum chamber 125 can be integrally formed, or the two layers of chambers can be fixedly connected by welding, flanges or clamps; Figure 7 As shown, the gas showerhead 110 further includes:

[0050] The diffusion plate 126 includes a plurality of through holes 127. An enlarged schematic diagram of a portion of the plurality of through holes 127 is shown in FIG. Figure 8 The diffuser plate 126 is located between the first sub-plenum chamber 124 and the second sub-plenum chamber 125, and the through hole 127 connects the first sub-plenum chamber 124 and the second sub-plenum chamber 125. The diffuser plate 126 having a plurality of through holes 127 is provided between the first sub-plenum chamber 124 and the second sub-plenum chamber 125, as shown in FIG. Figure 8 The example; the middle portion of the diffuser plate 126 may be provided with a mounting hole 128, Figure 7 The air inlet pipe 122 passes through the mounting hole 128 along the z direction and communicates with the air distribution pipe 123 under the diffuser plate 126; the multiple through holes 127 of the diffuser plate 126 can be arranged in concentric circles or in a spiral arrangement, such as an Archimedean spiral arrangement.

[0051] In some embodiments, reference Figure 9 and Figure 10 As shown, multiple first nozzles 151 are arranged along a first spiral 161, and multiple second nozzles 152 are arranged along a second spiral 162. The second spirals 162 are embedded in the gaps between the first spirals 161. In some embodiments, the first and second nozzles 151, 152 can be arranged in concentric circles. The number of first and second nozzles 151, 152 can be greater than 1000, minimizing the concentration difference per unit volume and the diffusion distance required for mixing, thereby improving dispersion and mixing uniformity.

[0052] The first pipe 131 is a spiral pipe, and the plurality of first nozzles 151 corresponding to the first pipe 131 can be arranged in a spiral shape, such as a first spiral 161. The first spiral 161 can be the same as the spiral shape of the first pipe 131; the gap between two adjacent spirals of the first pipe 131 is also spiral-shaped, and the plurality of second nozzles 152 corresponding to and connected to the gap of the first pipe 131 can be arranged in a second spiral 162, such as Figure 10 The first spiral 161 and the second spiral 162 shown may be conjugate spirals, and the second spiral 162 is Figure 10The dashed line in the figure shows an example; the first spiral 161 and the second spiral 162 can be conjugate Archimedean spirals. The first nozzles 151 are distributed along the first spiral 161. The diameter of the outlet of each first nozzle 151 can be the same or different. The diameter of the outlet of the first nozzle 151 can be adjusted according to the gas flow distribution of the second gas in the first pipe 131. For example, the inlet pipe 122 is connected to the first base point O1 at the center of the first pipe 131. The gas flow at the first base point O1 is relatively large. The gas flow at the pipe position closer to the first base point O1 is greater, so the diameter of the outlet of the first nozzle 151 at this location needs to be increased to reduce the outlet pressure. The diameter of the outlet of the second nozzle 152 can be set based on the first nozzle 151.

[0053] In some embodiments, reference Figure 9 As shown, the first nozzle 151 includes:

[0054] A first opening 1511 and a second opening 1512 are arranged opposite each other in the z-direction. The first opening 1511 is connected to the first duct 131, serving as an air inlet and the second opening 1512 as an air outlet. A constriction 1513 is located between the first and second openings 1511, connecting the first and second openings 1512. The width of the constriction 1513 in the x-direction is smaller than that of the first opening 1511, and smaller than that of the second opening 1512. The width of the second opening 1512 is greater than or equal to that of the first opening 1511. Taking the constriction 1513 as an example, the width of the constriction 1513 is the dimension in the x-direction, which may be the inner diameter of the constriction 1513.

[0055] The first opening 1511 has a first dimension W1 in the x-direction, the constricted portion 1513 has a second dimension W2 in the x-direction, and the second opening 1512 has a third dimension W3 in the x-direction, where the x-direction intersects or is perpendicular to the z-direction. The second dimension W2 is smaller than the first dimension W1, which is smaller than the third dimension W3, and the third dimension W3 is greater than or equal to the first dimension W1. The first nozzle 151 may include a Laval nozzle or a Laval nozzle. The constricted portion 1513 in the middle of the first nozzle 151 has a smaller diameter than both the inlet and outlet ends, increasing the gas outflow rate of the second gas and maintaining the gas outflow rate when the gas pressure within the gas showerhead 110 is insufficient. A higher gas outflow rate can reduce the accumulation of deposits resulting from gas mixing. The dimensions of the second nozzle 152 refer to those of the first nozzle 151 and are not further described.

[0056] According to some aspects of the embodiments of the present disclosure, Figure 1 A gas phase treatment device 10 is provided, comprising:

[0057] Process chamber 101; and Figure 1 、 Figure 2 、 Figure 5 as well as Figure 7 In the illustrated gas shower head 110, at least a portion of the gas shower head 110 is located within the process chamber 101. The gas inlet 121 of the gas shower head 110 may be located within the process chamber 101. A mounting hole is provided on the upper wall of the process chamber 101. A ventilation pipe 302 is installed in the mounting hole and communicates with the gas inlet 121 of the gas shower head 110. Alternatively, the ventilation pipe 302 is part of the gas inlet 121 of the gas shower head 110.

[0058] The gas supply assembly 300 is connected to the gas shower head 110 through the gas supply pipe 301. The gas supply assembly 300 provides at least the first gas and the second gas to the gas shower head 110. The gas supply pipe 301 is connected to the ventilation pipe 302 to supply gas to the gas shower head 110.

[0059] The wafer carrier 102 is located in the process chamber 101 . The wafer carrier 102 is configured to carry the wafer 200 . The gas shower head 110 is located above the wafer carrier 102 .

[0060] The outer wall of the ventilation duct 302 provides mounting support for the gas showerhead 110, and is secured to the mounting hole on the upper wall of the process chamber 101 with a flange and a sealing ring. Multiple sub-ducts can be configured within the ventilation duct 302, each of which is connected to a gas source of the gas supply assembly 300 via a gas supply duct 301. The ventilation pipe 302 is connected to the gas inlet 121 of the gas showerhead 110. The sub-pipeline installed inside the ventilation pipe 302 is connected to the gas inlet pipe 122 inside the gas inlet 121. The first gas enters the ventilation pipe 302 and is provided to the first plenum 120 through the gap between the gas inlet pipe 122 and the gas inlet 121. The first gas diffuses into the second plenum 130 and flows through the gap in the first pipe 131 to the second nozzle 152 for ejection. The second gas is introduced into the gas inlet pipe 122. The second gas can be input into the first pipe 131 through the gas distributor 123 or directly. After diffusion through the first pipe 131, the second gas flows into the first nozzle 151 for ejection. The first and second gases mix after exiting the nozzle. The mixed gas acts on the surface of the wafer 200, depositing or growing an epitaxial film layer on the wafer 200 surface.

[0061] The above description is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of changes or replacements within the technical scope disclosed in the present disclosure, and they should all be covered by the protection scope of the present disclosure.

Claims

1. A gas shower head, characterized in that: include: a first inflation chamber; comprising an air inlet; the air inlet being configured to input a first gas; a second inflatable chamber, communicating with the first inflatable chamber; a first pipe located in the second plenum chamber, the first pipe being configured to input a second gas; the first pipe extending continuously in a spiral on a first plane, with a gap between two adjacent spiral turns communicating with the first plenum chamber; the first plane intersecting the first direction; a sealing plate, located on a side of the second inflatable chamber away from the first inflatable chamber in the first direction; the sealing plate is fixedly connected to the side of the second inflatable chamber away from the first inflatable chamber; a first nozzle, passing through the sealing plate; the first nozzle is connected to the first pipe; The second nozzle passes through the sealing plate; the second nozzle is communicated with the gap between two adjacent spiral circles of the first pipeline.

2. The gas shower head according to claim 1, wherein: The gas shower head further comprises: The second pipe is located in the second inflation chamber and is configured to input a third gas. The second pipe extends continuously in a spiral on the first plane and is embedded in the gap of the first pipe.

3. The gas shower head according to claim 1, wherein: The gas shower head further comprises: an air intake pipe, sleeved in the air intake port; the air intake pipe extends along the first direction and communicates with the first pipe; The air intake pipe is configured to input the second gas, and the gap between the air intake pipe and the air inlet is configured to input the first gas.

4. The gas shower head according to claim 3, wherein: The gas shower head further comprises: Multiple air distribution pipes are located in the first inflation chamber; the air distribution pipes extend in a direction parallel to the first plane, and are connected to the air intake pipe at one end of the extension direction; the air distribution pipes and the first pipe have multiple intersections, and the air distribution pipes are connected to the first pipe at at least one of the intersections.

5. The gas shower head according to claim 4, wherein: The first plenum chamber comprises: a first sub-plenum chamber and a second sub-plenum chamber arranged and connected in the first direction, the second sub-plenum chamber being located between the first sub-plenum chamber and the second plenum chamber, and the plurality of gas distribution pipes being located in the second sub-plenum chamber; The gas shower head further comprises: The diffusion plate includes a plurality of through holes. The diffusion plate is located between the first sub-plenum chamber and the second sub-plenum chamber, and the through holes communicate with the first sub-plenum chamber and the second sub-plenum chamber.

6. The gas shower head according to claim 1, wherein: A plurality of the first nozzles are arranged along a first spiral, and a plurality of the second nozzles are arranged along a second spiral; the second spiral is embedded in the gap of the first spiral.

7. The gas shower head according to claim 1, wherein: The first nozzle comprises: A first opening and a second opening are arranged opposite to each other in the first direction, the first opening is connected to the first pipe; and a contraction portion is located between the first opening and the second opening, the contraction portion is connected to the first opening and the second opening; the diameter width of the contraction portion is smaller than the diameter width of the first opening, and the diameter width of the contraction portion is smaller than the diameter width of the second opening; the diameter width of the second opening is greater than or equal to the diameter width of the first opening.

8. The gas shower head according to claim 1, wherein: The first pipe includes a first base point, and the first pipe spirally extends with the first base point as the starting point; two adjacent spirals of the first pipe have a first pitch in the second direction; the first pitches between any two adjacent spirals of the first pipe are equal.

9. The gas shower head according to claim 8, wherein: A cross-sectional shape of the inner space of the first inflation chamber in the first plane includes a circle, and the first base point overlaps with a center of the circle in the first direction.

10. A gas phase treatment device, characterized in that: include: process cavity; and the gas shower head according to any one of claims 1 to 9, wherein at least a portion of the gas shower head is located within the process chamber; a gas supply assembly, connected to the gas shower head through a gas supply pipeline, the gas supply assembly providing at least a first gas and a second gas to the gas shower head; A wafer carrier is located in the process chamber; the wafer carrier is configured to carry wafers, and the gas shower head is located above the wafer carrier.

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