Isolation structure of field effect transistor
The fixed structure of the long board and the card board and the isolation layer design solve the problem of easy breakage of the field effect transistor pins, achieve stable transportation and use, and improve the reliability and current driving capability of the device.
Patent Information
- Application Number
- CN202422757404.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-13
- Publication Date
- 2025-09-26
- Estimated Expiration
- 2034-11-13
AI Technical Summary
The pins of field-effect transistors can easily break due to external collision, extrusion or bending during transportation, installation or use, rendering them unusable.
The fixed structure of long plates and card plates is adopted, combined with the design of rubber pads and metal layers. The stable fixation of the pins is achieved through the rotation adjustment of the screw rod and L-shaped plate, and the capacitive coupling and electromagnetic interference are reduced through the isolation layer.
It effectively prevents pins from breaking during transportation, installation or use, improves the reliability and stability of field-effect transistors, reduces signal interference, and enhances current driving capability and switching speed.
Smart Images
Figure CN223390554U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of field effect transistors, in particular to an isolation structure of a field effect transistor. Background Art
[0002] The field-effect transistor (FET) is an important semiconductor device widely used in modern electronics. Its operating principle is based on the control of carriers in a conductive channel by an electric field. The FET's operating principle is that the I current flowing through the channel between the drain and source is controlled by the reverse-biased gate voltage formed by the PN junction between the gate and the channel.
[0003] In view of the above-mentioned and existing related technologies, the inventors believe that the following defects often exist: during transportation, installation or use, unprotected pins can easily break due to external collision, extrusion or bending, resulting in unusability; therefore, to address the above problems, an isolation structure of a field effect transistor is proposed. Utility Model Content
[0004] The purpose of the present utility model is to solve the shortcomings of the prior art that unprotected pins can easily break due to external collision, extrusion or bending during transportation, installation or use, resulting in unusability, and to propose an isolation structure for field effect transistors.
[0005] In order to achieve the above-mentioned purpose, the utility model adopts the following technical solution: an isolation structure of a field effect transistor, comprising a semiconductor substrate, four pins are installed on the surface of the semiconductor substrate, the surfaces of the four pins are slidably connected to a long plate, the surfaces of the long plate are fixedly connected to two card plates, the surfaces of the four pins are slidably connected to a connecting plate, the surface of the connecting plate is provided with a sliding hole, the card plate is slidably connected to the inner surface of the connecting plate sliding hole, the surface of the card plate is provided with a slot, the inner surface of the card plate slot is fixedly connected to a short rod, the arc surface of the short rod is rotatably connected to an L-shaped plate, a screw rod is inserted into the internal thread of the card plate, and one end of the screw rod abuts against the L-shaped plate.
[0006] The effect achieved by the above components is that the long board and the card board fix and support the pins. During transportation, installation or use, the unprotected pins can easily break due to external collision, extrusion or bending, resulting in unusable conditions.
[0007] Preferably, one end of the screw rod is fixedly connected to a handle, and the size of the clamping plate is adapted to the size of the sliding hole of the connecting plate.
[0008] The effect achieved by the above components is that the handle is turned to drive the screw to rotate in the clamping plate, so that the staff can stably rotate the screw to accurately control the tightening degree of the L-shaped plate.
[0009] Preferably, a first rubber pad is fixedly connected to the surface of the long board, and a second rubber pad is fixedly connected to one side of the connecting board.
[0010] The effect achieved by the above components is: by arranging the first rubber pad and the second rubber pad, scratches are prevented from occurring during the process of fixing the long board and the card board to the pins.
[0011] Preferably, an isolation layer is fixedly connected to the surface of the semiconductor substrate, and the isolation layer is made of aluminum oxide.
[0012] The effects achieved by the above components are: enhancing the isolation effect, reducing the capacitive coupling between adjacent field effect transistors, reducing signal interference, avoiding device malfunction or performance degradation caused by signal interference, and improving the reliability of field effect transistors.
[0013] Preferably, a metal layer is fixedly connected to the surface of the isolation layer.
[0014] The effects achieved by the above components are: the metal layer can shield external electromagnetic interference, reduce the impact of external electromagnetic fields on field-effect transistors, and improve their anti-interference capabilities; on the other hand, the grounded metal layer can also help dissipate the heat generated during the operation of the field-effect transistor, preventing the device from being damaged due to overheating, and improving the reliability and stability of the device.
[0015] Preferably, a filler is provided on the side of the metal layer and the isolation layer that is close to each other, and the filler is a polyimide organic material filler.
[0016] The effects achieved by the above components are: generating tensile stress or compressive stress in the channel region, thereby changing the mobility of carriers and improving the current driving capability and switching speed of the field effect transistor.
[0017] In summary, the beneficial effects of the present invention are as follows:
[0018] 1. In the present invention, the long board and the card board play a role in fixing and supporting the pins. During transportation, installation or use, the unprotected pins can easily be broken due to external collision, extrusion or bending, resulting in unusable situations. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 It is a schematic diagram of the three-dimensional structure of the utility model;
[0020] Figure 2 This is a schematic structural diagram of the medium-long board of the utility model;
[0021] Figure 3 For this utility model Figure 2 A magnified view of point A;
[0022] Figure 4 It is a cross-sectional view of the semiconductor substrate in the present invention.
[0023] Legend: 1. Semiconductor substrate; 2. Pins; 3. Long board; 4. Card board; 5. Connecting board; 6. Short rod; 7. L-shaped board; 8. Screw rod; 9. Handle; 10. First rubber pad; 11. Second rubber pad; 12. Isolation layer; 13. Filling layer; 14. Metal layer. DETAILED DESCRIPTION
[0024] Reference Figure 1-4 As shown, the utility model provides a technical solution: an isolation structure for a field effect transistor, comprising a semiconductor substrate 1, four pins 2 mounted on the surface of the semiconductor substrate 1, a long plate 3 slidably connected to the surface of the four pins 2, two clamping plates 4 fixedly connected to the surface of the long plate 3, a connecting plate 5 slidably connected to the surface of the four pins 2, a sliding hole formed on the surface of the connecting plate 5, the clamping plate 4 slidingly connected to the inner surface of the sliding hole of the connecting plate 5, a slot formed on the surface of the clamping plate 4, a short rod 6 fixedly connected to the inner surface of the slot of the clamping plate 4, an L-shaped plate 7 rotatably connected to the arc surface of the short rod 6, a screw 8 inserted into the internal thread of the clamping plate 4, one end of the screw 8 abutting the L-shaped plate 7. The long plate 3 and the clamping plate 4 fix and support the pins 2. During transportation, installation or use, the unprotected pins 2 are easily broken due to external collision, extrusion or bending, making them unusable. One end of the screw 8 is fixedly connected to a handle 9, and the size of the clamping plate 4 is adapted to the size of the sliding hole of the connecting plate 5. Turning the handle 9 drives the screw 8 to rotate within the card plate 4, allowing the operator to stably rotate the screw 8 and precisely control the degree of tightening of the L-shaped plate 7. A first rubber pad 10 is fixedly connected to the surface of the long plate 3, and a second rubber pad 11 is fixedly connected to one side of the connecting plate 5. The provision of the first rubber pad 10 and the second rubber pad 11 prevents scratches from occurring during the process of fixing the long plate 3 and the card plate 4 to the pins 2. An isolation layer 12 is fixedly connected to the surface of the semiconductor substrate 1. The isolation layer 12 is made of aluminum oxide. This can enhance the isolation effect, reduce capacitive coupling between adjacent field-effect transistors, reduce signal interference, avoid device malfunction or performance degradation caused by signal interference, and improve the reliability of the field-effect transistors. A metal layer 14 is fixedly connected to the surface of the isolation layer 12. The metal layer 14 can shield against external electromagnetic interference, reducing the impact of external electromagnetic fields on the field-effect transistor and improving its anti-interference capability. Furthermore, the grounded metal layer 14 can help dissipate heat generated during the operation of the field-effect transistor, preventing damage from overheating and improving its reliability and stability. The metal layer 14 has a filler on the side adjacent to the isolation layer 12. The filler is made of an organic polyimide material. This creates tensile or compressive stress in the channel region, thereby changing carrier mobility and improving the current drive capability and switching speed of the field-effect transistor.
[0025] Working principle: push the long plate 3 to drive the two card plates 4 to move until the card plate 4 is on the inner surface of the sliding hole of the connecting plate 5, and rotate the L-shaped plate 7 to rotate on the arc surface of the short rod 6. At this time, the L-shaped plate 7 abuts the surface of the connecting plate 5, and then rotate the handle 9 to drive the screw rod 8 to rotate in the card plate 4 until one end of the screw rod 8 abuts against the L-shaped plate 7. The isolation layer 12 can enhance the isolation effect, reduce the capacitive coupling between adjacent field effect transistors, reduce signal interference, avoid device malfunction or performance degradation caused by signal interference, and improve the reliability of the field effect transistor. The metal layer 14 can shield external electromagnetic interference, reduce the impact of external electromagnetic fields on the field effect transistor, and improve its anti-interference ability; on the other hand, the grounded metal layer 14 can also help dissipate the heat generated during the operation of the field effect transistor, prevent the device from being damaged due to overheating, and improve the reliability and stability of the device. The filler can generate tensile stress or compressive stress in the channel area, thereby changing the carrier mobility and improving the current driving capability and switching speed of the field effect transistor.
[0026] In the description of this utility model, it should be noted that, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on specific circumstances.
Claims
1. An isolation structure for a field effect transistor, comprising a semiconductor substrate (1), characterized in that: Four pins (2) are mounted on the surface of the semiconductor substrate (1), and the surfaces of the four pins (2) are slidably connected to a long plate (3), and the surface of the long plate (3) is fixedly connected to two card plates (4), and the surfaces of the four pins (2) are slidably connected to a connecting plate (5), and a sliding hole is provided on the surface of the connecting plate (5), and the card plate (4) is slidably connected to the inner surface of the sliding hole of the connecting plate (5), and a card slot is provided on the surface of the card plate (4), and a short rod (6) is fixedly connected to the inner surface of the card slot of the card plate (4), and the arc surface of the short rod (6) is rotatably connected to an L-shaped plate (7), and a screw rod (8) is inserted into the internal thread of the card plate (4), and one end of the screw rod (8) is in contact with the L-shaped plate (7).
2. The field effect transistor isolation structure according to claim 1, wherein: One end of the screw rod (8) is fixedly connected to a handle (9), and the size of the clamping plate (4) is adapted to the size of the sliding hole of the connecting plate (5).
3. The field effect transistor isolation structure according to claim 1, wherein: A first rubber pad (10) is fixedly connected to the surface of the long plate (3), and a second rubber pad (11) is fixedly connected to one side of the connecting plate (5).
4. The field effect transistor isolation structure according to claim 1, wherein: An isolation layer (12) is fixedly connected to the surface of the semiconductor substrate (1), and the isolation layer (12) is made of aluminum oxide.
5. The field effect transistor isolation structure according to claim 4, wherein: A metal layer (14) is fixedly connected to the surface of the isolation layer (12).
6. The field effect transistor isolation structure according to claim 5, wherein: A filler is provided on the side of the metal layer (14) and the isolation layer (12) that is close to each other, and the filler is a polyimide organic material filler.