Deep red light emitting device
By using deep red light-emitting devices in LED eye-protection lamps, including light-emitting chips and a fluorescent layer of deep red phosphor, the production difficulties caused by multiple red light chips are solved, and wide-band deep red light emission and simple combination with existing white light devices are achieved, meeting users' needs for deep red light and near-infrared light.
Patent Information
- Application Number
- CN202421957650.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-13
- Publication Date
- 2025-10-03
- Estimated Expiration
- 2034-08-13
AI Technical Summary
Existing LED eye protection lamps need to use red light chips with multiple wavelengths to supplement deep red light and near-infrared light, which increases the difficulty of production and manufacturing.
A deep red light emitting device is used, including a light emitting chip and a fluorescent layer. The fluorescent layer contains deep red phosphor. The emitted light has a peak in the range of 630 to 830 nanometers, avoiding the use of red light chips with multiple wavelengths.
It achieves deep red light emission in a larger wavelength range, reduces production difficulty, and can be simply combined with existing full-spectrum white light emitting devices that are recognizable by the human eye to supplement the deep red light portion that is beneficial to the human eye without affecting the color output of the final light.
Smart Images
Figure CN223415223U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of lighting, in particular to a deep red light emitting device. Background Art
[0002] Future lighting development will trend toward human-centric, ergonomic lighting. Human-centric lighting refers to the art of creating lighting that simulates natural sunlight to enhance human function, thereby improving human function, comfort, health, and well-being. Existing technology has achieved a close match to the solar spectrum within the visible light range (425-690 nm) detectable by the human eye. However, as people's demand for light quality increases, the market is demanding further enhancements to the existing spectrum, including deep red light and even some near-infrared light, which are beneficial to the human eye. Therefore, some LED eye-protection lamps are currently designed to supplement the deep red portion of visible light. To achieve this, gallium arsenide (GaAs) red light chips are often used. However, since the half-wavelength width of the light emitted by GaAs red light chips is very narrow, approximately 18 nanometers, supplementing red light across a wider range requires the use of red light chips with multiple wavelengths, which increases manufacturing complexity. Utility Model Content
[0003] Therefore, in order to overcome at least some of the defects and deficiencies in the prior art, the embodiments of the present invention provide a deep red light emitting device.
[0004] Specifically, the embodiment of the present invention provides a deep red light emitting device, comprising: a light emitting chip; and a fluorescent layer, which is arranged on the light emitting chip, wherein the fluorescent layer comprises a deep red light phosphor, and the light emitted by the deep red light emitting device has a peak only in the range of 630 to 830 nanometers, and the deep red light phosphor is Y3Al5O 12 :Cr、(Y,Gd)3(Ga,Al)5O 12 :Cr, MgLaAlO:Cr and SrAl2O4:Cr.
[0005] From the above, it can be seen that the embodiment of the present invention sets the deep red light emitting device as a light emitting chip and a fluorescent layer including deep red light phosphor, so as to simply realize deep red light emission in a larger wavelength range, avoid the use of red light chips with multiple wavelengths, and thus reduce the production difficulty. BRIEF DESCRIPTION OF THE DRAWINGS
[0006] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0007] Figure 1 This is a schematic structural diagram of a deep red light emitting device provided in an embodiment of the present application.
[0008] Figure 2A and Figure 2B A schematic diagram of the spectrum of a deep red light emitting device.
[0009] Figure 3 This is another structural schematic diagram of the deep red light emitting device provided in an embodiment of the present application.
[0010] Figure 4A and Figure 4B Schematic diagram of the spectrum of another deep red light emitting device.
[0011] Figure 5A Schematic diagram of the spectrum synthesized by the deep red light emitting device and the existing 4000K full-spectrum white light emitting device that is recognizable to the human eye.
[0012] Figure 5B Schematic diagram of the spectrum synthesized by the deep red light emitting device and the existing 2700K full-spectrum white light emitting device that is recognizable to the human eye. DETAILED DESCRIPTION
[0013] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments described in the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0014] See also Figure 1 The embodiment of the present invention provides a deep red light emitting device 100, which may, for example, include a light emitting chip 10 and a fluorescent layer 20. The fluorescent layer 20 may, for example, be disposed on the light emitting chip 10, and the fluorescent layer 20 includes deep red phosphor. The light emitted by the deep red light emitting device 100 has a peak only in the range of 630 to 830 nanometers. Furthermore, in some implementations of the present embodiment, the light emitted by the deep red light emitting device 100 has a peak only in the range of 630 to 780 nanometers. The present embodiment configures the deep red light emitting device 100 as a light emitting chip 10 and a fluorescent layer 20 including deep red phosphor, thereby enabling the deep red light emitting device 100 to emit deep red light in a larger wavelength range, which may even include part of near-infrared light, thereby avoiding the use of red light chips with multiple wavelengths, thereby reducing the difficulty of production.
[0015] Furthermore, in this embodiment, the peak wavelength of the emission spectrum of the deep red phosphor is greater than 690 nanometers. Specifically, the deep red phosphor is Y3Al5O 12 :Cr、(Y,Gd)3(Ga,Al)5O 12 :Cr, MgLaAlO:Cr and SrAl2O4:Cr are mixed with any one or more of them.
[0016] The deep red light emitting device 100 provided in this embodiment can select a suitable chip and phosphor ratio according to user needs, so that the peak wavelength of the emitted light can be selectively between 630 and 830 nanometers, and has a peak in the range of 690 to 830 nanometers (in some embodiments, 690 to 780 nanometers), and its half-wave width (FWHM) is greater than 100 nanometers. This is reflected in the conventional visible light spectrum (380 to 780 nanometers) as the intensity value of the light at a wavelength of 780 nanometers is more than 30% of the peak wavelength intensity value of the deep red light emitting device 100 in the range of 690 to 780 nanometers.
[0017] In one implementation of this embodiment, the light emitting chip 10 may be, for example, a red light chip, which excites the deep red light phosphor to emit deep red light. Figure 2A and Figure 2B , Figure 2A and Figure 2B Schematic diagram of the spectrum of the deep red light emitting device 100 prepared according to different user requirements. Figure 2A and Figure 2B The light emitting chip 10 used in the deep red light emitting device 100 is a red light chip, with a main wavelength range of 630 to 660 nanometers and a peak in the range of 645 to 675 nanometers. Figure 2A and Figure 2B The deep red phosphors used in the two deep red light emitting devices 100 represented by the present invention can be, for example, Y3Al5O 12 :Cr、(Y,Gd)3(Ga,Al)5O 12 :Cr, MgLaAlO:Cr and SrAl2O4:Cr are mixed with any one or more of them. Figure 2A and Figure 2B The two deep red light emitting devices 100 shown can use different phosphors or the same phosphor, but the amount of phosphor used will be different to meet the different needs of different customers for red light and deep red light. Figure 2A and Figure 2BIt can be seen that the light emitted by the deep red light emitting device 100 has a peak only in the range of 630 to 830 nanometers, ensuring that the ratio of the integrated intensity of the deep red light emitting device 100's luminous spectrum below 580 nanometers to the spectral integrated intensity of the light emitted by the deep red light emitting device is less than or equal to 2%. This ensures that it can be simply combined with existing full-spectrum light emitting devices that can be perceived by the human eye to supplement the deep red light that is beneficial to the human eye without significantly affecting the color output of the final synthesized light. In this embodiment, at least one peak of the deep red light emitting device 100 is located in the range of 690 to 780 nanometers. Figure 2A and Figure 2B And the following Figure 4A 、 Figure 4B The spectra are normalized based on the peak value in the range of 690 to 780 nanometers. Figure 2A and Figure 2B As shown, the light emitted by the deep red light emitting device 100 has a peak at 630-690 nm and at least another peak at 690-780 nm; Figure 2B The peak normalized intensity of the deep red light emitting device 100 in the range of 630 to 690 nanometers is greater than that of Figure 2A The deep red light emitting device 100 shows a peak normalized intensity within the range of 630-690 nanometers, which can meet the needs of some users for higher red light. The spectrum of light emitted by the deep red light emitting device 100 in this embodiment is discontinuous within the range of 630-830 nanometers, that is, at least one pair of adjacent peaks has a trough with a normalized intensity of less than 30%.
[0018] The various implementations of this embodiment all use a red light chip as the excitation light source to excite the deep red phosphor. This results in the deep red light-emitting device 100 emitting light that includes some of the beneficial red light required by users, as well as a wide-band deep red light, and even some near-infrared light. By combining the deep red light-emitting device 100 with existing full-spectrum light-emitting devices that are recognizable to the human eye, the missing deep red portion of the existing full-spectrum light spectrum can be better compensated for, while ensuring efficient excitation of the deep red phosphor. The peak wavelength intensity of the red light chip and the peak wavelength of the deep red light can be selected based on specific user needs and are not limited to the two implementations described in this embodiment.
[0019] In another embodiment of the present embodiment, the light-emitting chip 10 may be, for example, a blue light chip, and the fluorescent layer 20 may, for example, further include nitride red powder, that is, the fluorescent layer 20 includes deep red light phosphor and nitride red powder. The light emitted by the deep red light-emitting device 100 has a peak only in the range of 630 to 830 nanometers. Based on the choices of most users, it may have a peak only in the range of 630 to 780 nanometers, or even only in the range of 690 to 780 nanometers. By setting the deep red phosphor, the blue chip can excite the deep red phosphor to emit deep red light. By setting the nitride red powder, the excess blue light emitted by the blue chip can be absorbed, thereby improving the purity of the deep red light emitted by the deep red light emitting device 100. This ensures that the ratio of the spectral integrated intensity of the luminous spectrum of the deep red light emitting device 100 below 580 nanometers to the spectral integrated intensity of the light emitted by the deep red light emitting device is less than or equal to 2%. This prevents the deep red light emitting device 100 from affecting the blue-green portion of the visible light range that can be recognized by the human eye when used in conjunction with the existing full-spectrum white light that can be recognized by the human eye, causing the synthetic spectrum to deviate from the sunlight spectrum. In this embodiment, the deep red phosphor can be, for example, Y3Al5O 12 :Cr、(Y,Gd)3(Ga,Al)5O 12 The nitride red powder comprises a mixture of any one or more of: Cr, MgLaAlO:Cr, and SrAl2O4:Cr; the peak wavelength of the emission spectrum of the nitride red powder is greater than or equal to 645 nanometers. The main wavelength range of the blue light chip is 430 to 470 nanometers, and the blue light chip can be a narrowband blue light chip or a broadband blue light chip.
[0020] In this embodiment, the fluorescent layer 20 may be formed by mixing the red nitride powder and the deep red fluorescent powder. Figure 1 Single layer shown, see also Figure 3 The phosphor layer 20 includes a first phosphor layer 21 and a second phosphor layer 22, preferably a stacked arrangement. The first phosphor layer 21 is preferably a red nitride phosphor, and the second phosphor layer 22 is a deep red phosphor. Furthermore, the second phosphor layer 22 is disposed on the light-emitting chip 10, with the first phosphor layer 21 disposed on the side of the second phosphor layer 22 facing away from the light-emitting chip 10. In other words, the first phosphor layer 21 is disposed on the second phosphor layer 22, but this is not a limitation of the present invention.
[0021] See also Figure 4A and Figure 4B , Figure 4A and Figure 4B FIG. 1 is a spectrum diagram of the deep red light emitting device 100 prepared according to different user requirements in this embodiment. Figure 4A and Figure 4BThe light-emitting chips 10 used in the deep red light-emitting devices 100 are all blue light-emitting chips, which can be the same or different. Similarly, the two deep red light-emitting devices 100 can use different phosphors or the same phosphor, but the amount of phosphor used and the ratio of deep red phosphor to nitride red phosphor can vary to meet the different needs of different customers for deep red light in different wavelength bands. The light emitted by the deep red light-emitting device 100 of this embodiment has a peak only in the range of 630 to 830 nanometers, mainly only in the deep red light band of 690 to 780 nanometers, or only in the deep red light band of 690 to 830 nanometers and part of the near-infrared band. This ensures that the ratio of the integrated intensity of the light spectrum of the deep red light-emitting device 100 below 580 nanometers to the integrated intensity of the spectrum of the light emitted by the deep red light-emitting device is less than or equal to 2%. This ensures that it can be easily combined with existing full-spectrum white light-emitting devices that can be perceived by the human eye to supplement the deep red light that is beneficial to the human eye without significantly affecting the color output of the final synthesized light. In this embodiment, the spectrum of the deep red light emitting device 100 is continuous in the range of 630 to 830 nanometers, and the peak wavelength is greater than 690 nanometers, and the half-wave width is greater than 100 nanometers.
[0022] The deep red light emitting device 100 provided in this embodiment can be combined with the existing full-spectrum white light emitting device that is recognizable by the human eye, so as to supplement the deep red light (or including part of the red light and near-infrared light) that is beneficial to the human eye on the existing basis, without causing a significant impact on the final color output of the light emitting device. The following is an illustration of the combination of the existing 2700K and 4000K full-spectrum white light emitting devices that are recognizable by the human eye and the deep red light emitting device 100 provided by the present invention; the 2700K and 4000K full-spectrum white light emitting devices that are recognizable by the human eye can be, for example, the Thrive series of the Purui brand. It should be noted that the deep red light emitting device 100 can be combined with a white light emitting device to form a light-emitting device, or can be used together as two separately designed light-emitting devices, and this embodiment is not limited to this.
[0023] See also Figure 5A , taking 4000K color temperature as an example, Figure 5A The 4000K BBL curve in the middle represents the blackbody radiation trajectory of the 4000K color temperature; the 4000K curve is the luminous spectrum of an existing 4000K full-spectrum white light emitting device that can be recognized by the human eye, and the 4000K+R1, 4000K+R2, 4000K+R3, and 4000K+R4 curves are respectively Figure 2A 、 Figure 2B 、 Figure 4A 、 Figure 4B Schematic diagram of the synthetic spectrum emitted by the deep red light emitting device 100 and the aforementioned 4000K human eye recognizable full spectrum white light emitting device. Figure 5AIt can be seen that regardless of whether the deep red light emitting device 100 is composed of a red chip and deep red phosphor, or composed of a blue chip and deep red phosphor and nitride red powder, it can be simply matched with the existing full-spectrum white light emitting device that can be recognized by the human eye according to different customer needs, to supplement the red light and / or deep red light part that users believe is beneficial to the human eye, without causing a significant impact on other colors that can be recognized by the human eye. The synthetic spectrum can still be well close to the blackbody radiation trajectory under the corresponding color temperature.
[0024] See also Figure 5B , taking 2700K color temperature as an example, Figure 5B The 2700K BBL curve represents the blackbody radiation trajectory of the 2700K color temperature; the 2700K curve is the luminous spectrum of an existing 2700K full-spectrum white light emitting device that can be recognized by the human eye, and the 2700K+R1, 2700K+R2, 2700K+R3, and 2700K+R4 curves are respectively Figure 2A 、 Figure 2B 、 Figure 4A 、 Figure 4B Schematic diagram of the synthetic spectrum emitted by the deep red light emitting device 100 and the aforementioned 2700K human eye recognizable full spectrum white light emitting device. Figure 5B It can be seen that regardless of whether the deep red light emitting device 100 is composed of a red chip and deep red phosphor, or composed of a blue chip and deep red phosphor and nitride red powder, it can be simply matched with the existing full-spectrum white light emitting device that can be recognized by the human eye according to different customer needs, to supplement the red light and / or deep red light part that users believe is beneficial to the human eye, without causing a significant impact on other colors that can be recognized by the human eye. The synthetic spectrum can still be well close to the blackbody radiation trajectory under the corresponding color temperature.
[0025] More specifically, see Table 1, which shows the color coordinate data of the mixed light emitted by the aforementioned existing 4000K and 2700K full-spectrum white light emitting devices that are recognizable to the human eye in combination with the deep red light emitting device 100 provided by different embodiments of the present invention. As can be seen from Table 1, the color coordinates of both the existing 4000K and 2700K full-spectrum white light emitting devices that are recognizable to the human eye before and after being combined with the deep red light emitting device 100 provided by the present invention (4000K compared to 4000K+R1, 4000K+R2, 4000K+R3, 4000K+R4, and 2700K compared to 2700K+R1, 2700K+R2, 2700K+R3, 2700K+R4) are similar (the change in color coordinates x and y is less than or equal to 0.02). From the above, it can be seen that the deep red light emitting device 100 of the present invention can be used in combination with the existing full-spectrum white light emitting device that can be recognized by the human eye, and the color output of the combined synthetic light does not change much compared to the full-spectrum white light emitting device that can be recognized by the human eye. That is, the deep red light emitting device 100 of the present invention can be conveniently used in combination with the existing full-spectrum white light that can be recognized by the human eye, depending on the user's different needs for red light and / or near-infrared light.
[0026] Table 1
[0027] x y x y 4000K 0.3793 0.3795 2700K 0.4519 0.4068 4000K+R1 0.3835 0.3783 2700K+R1 0.4552 0.4053 4000K+R2 0.3870 0.3774 2700K+R2 0.4592 0.4035 4000K+R3 0.3878 0.3769 2700K+R3 0.4598 0.4029 4000K+R4 0.3799 0.3791 2700K+R4 0.4524 0.4062
[0028] In summary, the deep red light emitting device 100 provided in the embodiment of the present invention is configured as a light emitting chip 10 and a fluorescent layer 20 including deep red phosphor, thereby achieving a deep red light emitting device 100 emitting a wide band of deep red light, avoiding the use of deep red light chips with multiple wavelengths, thereby reducing production difficulties. In addition, the deep red light emitting device 100 provided in this embodiment can be used in combination with existing full-spectrum white light emitting devices that can be recognized by the human eye. The resulting synthetic spectrum has almost no effect on other colors in the visible light range except for red light that users have further needs (i.e., other spectra below 580 nanometers are almost unchanged), which can more easily meet the different needs of more users.
[0029] In addition, it can be understood that the aforementioned embodiments are merely illustrative descriptions of the present invention. Under the premise that the technical features do not conflict, the structures do not contradict, and the purpose of the invention of the present invention is not violated, the technical solutions of the various embodiments can be arbitrarily combined and used in combination.
[0030] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the various embodiments of the present invention.
Claims
1. A deep red light emitting device, characterized in that: include: Light-emitting chip; as well as A fluorescent layer is arranged on the light-emitting chip, the fluorescent layer includes deep red phosphor, the light emitted by the deep red light-emitting device has a peak only in the range of 630 to 830 nanometers, and the light emitted by the deep red light-emitting device has a peak in the range of 690 to 830 nanometers, and its half-wave width is greater than 100 nanometers.
2. The deep red light emitting device according to claim 1, characterized in that: The peak wavelength of the emission spectrum of the deep red phosphor is greater than 690 nanometers.
3. The deep red light emitting device according to any one of claims 1 to 2, characterized in that: The light emitting chip is a red light chip, and the peak wavelength of the red light chip is between 645 and 675 nanometers.
4. The deep red light emitting device according to any one of claims 1 to 2, characterized in that: The light emitting chip is a blue light chip.
5. The deep red light emitting device according to claim 4, characterized in that: The main wavelength range of the blue light chip is 430 to 470 nanometers.
6. The deep red light emitting device according to claim 4, characterized in that: The fluorescent layer includes a first fluorescent layer and a second fluorescent layer stacked together, the first fluorescent layer is nitride red powder, the second fluorescent layer is the deep red fluorescent powder, and the second fluorescent layer is arranged on the light-emitting chip, and the first fluorescent layer is arranged on the side of the second fluorescent layer away from the light-emitting chip.
7. The deep red light emitting device according to claim 4, characterized in that: The ratio of the spectral integrated intensity less than 580 nanometers to the spectral integrated intensity of light emitted by the deep red light emitting device is less than or equal to 2%.
8. The deep red light emitting device according to claim 1, wherein: The intensity value of the light emitted by the deep red light emitting device at a wavelength of 780 nanometers is more than 30% of the peak wavelength intensity value of the light emitted by the deep red light emitting device at a wavelength of 680 to 780 nanometers.