Improved packaging structure of power semiconductor module

Abstract

The utility model discloses an improved packaging structure of a power semiconductor module. The improved packaging structure comprises a heat dissipation base, at least one circuit substrate, at least one copper nut terminal, a rubber shell side wall and insulation paste. The circuit substrate comprises at least one chip which forms a power semiconductor module. The copper nut terminal is arranged on the heat dissipation base or the circuit substrate, the copper nut terminal is used as a bridge between external current and internal current of the power semiconductor module, and the chip is electrically connected to the copper nut terminal through a plurality of wires. A filling space is formed in the rubber shell side wall. The insulation paste is injected into the filling space to cover the circuit substrate, wherein the copper nut terminal is used for conducting current. The improved packaging structure of the power semiconductor module can greatly reduce electromagnetic radiation and is more suitable for the application field of large current.

Description

Technical Field

[0001] The utility model relates to a circuit board packaging structure, and in particular to an improved packaging structure for power semiconductor modules used in high current fields. Background Art

[0002] With the rapid development of the electronics industry, electronic products are gradually moving towards multi-functionality and high performance. Figure 1 and Figure 2 , Figure 1 FIG. 1 is a schematic diagram of a packaging structure of a power semiconductor module in the prior art. Figure 2 FIG. 1 is a schematic diagram of a three-dimensional exploded view of a packaging structure of a power semiconductor module in the prior art. Figure 1 and Figure 2 As shown, the three external connection terminals on the circuit board are rectangular sheets. They pass through three corresponding through-holes in the housing and are then recessed 90 degrees in the same direction for packaging. This makes the entire package too large, and because the external connection terminals are rectangular, negative electromagnetic effects are more obvious.

[0003] Therefore, how to solve the above problems and deficiencies of the prior art has become a research and development topic that relevant industry players are eager to address. Utility Model Content

[0004] The main purpose of the utility model is to provide an improved packaging structure for a power semiconductor module.

[0005] The utility model provides an improved packaging structure for a power semiconductor module, comprising a heat dissipation base, at least one circuit substrate, at least one copper nut terminal, a plastic shell side wall and insulating glue. The circuit substrate is arranged on the heat dissipation base, and the circuit substrate includes at least one chip, which constitutes a power semiconductor module. The copper nut terminal is arranged on the heat dissipation base or on the circuit substrate, and the copper nut terminal is used as a bridge between the external current and the internal current of the power semiconductor module, wherein the chip is electrically connected to the copper nut terminal through a plurality of wires. The plastic shell side wall is arranged around the heat dissipation base, and a filling space is formed inside the plastic shell side wall, wherein the height of the plastic shell side wall is lower than the height of the copper nut terminal. The insulating glue is injected into the filling space to cover the circuit substrate, and the injection height of the insulating glue does not exceed the height of the copper nut terminal. The copper nut terminal is used to conduct current.

[0006] In one embodiment of the present invention, the type of the at least one chip is one of a diode chip, a metal oxide semiconductor (MOS) chip, a bipolar junction transistor (BJT) chip, an insulated gate bipolar transistor (IGBT) chip, or a combination of at least two of them.

[0007] In one embodiment of the present invention, the at least one chip is a Metal Oxide Semiconductor (MOS) chip, a Bipolar Junction Transistor (BJT) chip, or an Insulated Gate Bipolar Transistor (IGBT) chip used as a switch function.

[0008] In one embodiment of the present invention, the diode chip of the at least one chip is used for rectification.

[0009] In one embodiment of the present invention, the improved packaging structure of the power semiconductor module further includes at least one set of control terminals for receiving at least one external control signal to determine whether the at least one chip is turned on.

[0010] In an embodiment of the present invention, the number of the at least one copper nut terminal is at least one.

[0011] In an embodiment of the present invention, the circuit substrate further includes at least one electronic component connected to the chip to form the power semiconductor module.

[0012] The utility model discloses a kind of encapsulation improved structures of power semiconductor module, encapsulation improved structure of power semiconductor module includes heat dissipation pedestal, at least one circuit board, at least one copper nut terminal, glue shell side wall and insulating glue.Electronic circuit board is set on the heat dissipation pedestal, and the electronic circuit board includes at least one chip, and its composition is a power semiconductor module.Copper nut terminal is set on the heat dissipation pedestal or the electronic circuit board, and the copper nut terminal is used as the bridge of external current and the internal current of the power semiconductor module, wherein the chip is electrically connected to the copper nut terminal by multiple wires and the copper nut terminal is used as the function of conducting current.Glue shell side wall is set around the heat dissipation pedestal, and the inside of the glue shell side wall forms a filling space, wherein the height of the glue shell side wall is lower than the height of the copper nut terminal.Insulating glue is injected in the filling space to cover the electronic circuit board, and the injection height of the insulating glue does not exceed the height of the copper nut terminal.The kind of chip is diode (Diode) chip and is used as rectification function.

[0013] To sum up, the encapsulation improved structure of power semiconductor module provided by the utility model can bring the following effects:

[0014] 1. greatly reduce electromagnetic radiation; and

[0015] 2. more suitable for the application field of large current.

[0016] The following is illustrated in detail through specific embodiments, when more easily understand the purpose, technical content, characteristics and effects achieved of the utility model. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 It is the schematic diagram of the encapsulation structure of prior art power semiconductor module.

[0018] Figure 2 It is the three-dimensional exploded schematic diagram of the encapsulation structure of prior art power semiconductor module.

[0019] Figure 3 It is the schematic diagram of the encapsulation improved structure of power semiconductor module of the utility model.

[0020] Figure 4 It is the partial three-dimensional exploded schematic diagram of the encapsulation improved structure of power semiconductor module of the utility model.

[0021] Figure 5 It is the schematic diagram of another embodiment of the encapsulation improved structure of power semiconductor module of the utility model.

[0022] Figure 6 It is the partial three-dimensional exploded schematic diagram of another embodiment of the encapsulation improved structure of power semiconductor module of the utility model.

[0023] BRIEF DESCRIPTION OF DRAWINGS 100 - package improvement structure of power semiconductor module; 110 - heat sink base; 120 - circuit substrate; 122 - chip; 130 - copper nut terminal; 140 - glue shell side wall; 142 - filling space; 150 - control terminal; 160 - insulating glue; EL - wire. DETAILED DESCRIPTION

[0024] The inventor has improved the drawbacks of the existing products through years of research and development. The following will describe how the package improvement structure of power semiconductor module achieves the most efficient function.

[0025] Referring to Figures 3 to 6 , Figure 3 FIG. 1 is a schematic diagram of the package improvement structure of power semiconductor module of the present application. Figure 4 FIG. 2 is a partial exploded schematic diagram of the package improvement structure of power semiconductor module of the present application. Figure 5 FIG. 3 is another embodiment schematic diagram of the package improvement structure of power semiconductor module of the present application. Figure 6 FIG. 4 is a partial exploded schematic diagram of another embodiment of the package improvement structure of power semiconductor module of the present application. As shown in the figure, the package improvement structure 100 of power semiconductor module includes a heat sink base 110, at least one circuit substrate 120, at least one copper nut terminal 130, a glue shell side wall 140, and an insulating glue 160. The circuit substrate 120 is disposed on the heat sink base 110. The circuit substrate 120 includes at least one chip 122, which constitutes a power semiconductor module. The circuit substrate 120 can be a ceramic circuit substrate. In another embodiment, the circuit substrate 120 further includes at least one electronic component, which is connected to the chip 122 to jointly constitute the power semiconductor module. The copper nut terminal 130 is disposed on the heat sink base 110 or the circuit substrate 120. The copper nut terminal 130 serves as a bridge for external current and internal current of the power semiconductor module. The copper nut terminal serves as a function of conducting current. The chip 122 is electrically connected to the copper nut terminal 130 through multiple wires. The glue shell side wall 140 is disposed around the heat sink base 110 to form a closed shape. The inside of the glue shell side wall 140 forms a filling space 142. The height of the glue shell side wall 140 is lower than the height of the copper nut terminal 130. The insulating glue 160 is injected into the filling space 142 to cover the circuit substrate 120. The injection height of the insulating glue 160 does not exceed the height of the copper nut terminal 130. Furthermore, in another embodiment, a housing can be used to achieve the function of covering the circuit substrate 120.

[0026] As Figure 3 and Figure 4In one embodiment shown, the types of chips are diode chips, metal oxide semiconductor (MOS) chips, bipolar junction transistor (BJT) chips, insulated gate bipolar transistor (IGBT) chips, or various combinations thereof. The so-called various combinations refer to selecting any two, any three, or all four of them for combination. In addition, the types of chips further include driver chips (driver ICs), which are used to drive chips with switching functions, such as metal oxide semiconductor (MOS) chips, bipolar junction transistor (BJT) chips, or various combinations thereof. Furthermore, as Figure 5 and Figure 6 As shown, the metal oxide semiconductor (MOS) chip, bipolar junction transistor (BJT) chip, and insulated gate bipolar transistor (IGBT) chip of the above-mentioned chips are mainly used as switching functions, but are not limited to this. In addition, the diode chip of this chip is used as a rectification function (such as full bridge or half bridge), but is not limited to this. The number of copper nut terminals 130 shown in the figure is only one, but it can be expanded to multiple copper nut terminals 130 (for example, three or more, such as Figure 6 The three shown in the figure can pass a larger current to allow the diode chip to perform the rectification function together, or allow the metal oxide semiconductor (MOS) chip, bipolar junction transistor (BJT) chip, and insulated gate bipolar transistor (IGBT) chip to perform the switching function.

[0027] In addition, in this embodiment, Figure 5 and Figure 6As shown, the improved packaging structure 100 for a power semiconductor module further includes at least one set of control terminals 150 for receiving at least one external control signal to determine whether the chips 122 are conductive. In this embodiment, there are three copper nut terminals 130 and two sets of control terminals 150 (each including at least one). In another embodiment, the circuit substrate 120 further includes at least one electronic component connected to the chips 122, control terminals 150, or other components to form the power semiconductor module.

[0028] Compared with the existing technology, the present invention Figure 4 and Figure 6 The structure can better reduce the electromagnetic radiation effect and is more suitable for applications with high power or high current (such as 400 amperes or more, but not limited to this)

[0029] In summary, the improved packaging structure of the power semiconductor module provided by the present invention can bring the following benefits:

[0030] 1. Significantly reduce electromagnetic radiation; and

[0031] 2. More suitable for high current applications.

[0032] The above description is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. Therefore, all equivalent changes or modifications based on the features and spirit described in the claims of the present invention should be included in the scope of protection of the present invention.

Claims

1. An improved packaging structure for a power semiconductor module, characterized in that: include: a heat dissipation base; At least one circuit substrate is disposed on the heat dissipation base, and the circuit substrate includes at least one chip, which constitutes a power semiconductor module; At least one copper nut terminal is disposed on the heat dissipation base or the circuit substrate, the copper nut terminal being used as a bridge between external current and internal current of the power semiconductor module, wherein the chip is electrically connected to the copper nut terminal via a plurality of wires; a plastic shell side wall, which is disposed around the heat dissipation base, with a filling space formed inside the plastic shell side wall, wherein the height of the plastic shell side wall is lower than the height of the copper nut terminal; and An insulating glue is injected into the filling space to cover the circuit substrate, and the injection height of the insulating glue does not exceed the height of the copper nut terminal. The copper nut terminal is used to conduct current.

2. The improved packaging structure of a power semiconductor module according to claim 1, wherein: The at least one chip is of the type of a diode chip, a metal oxide semiconductor chip, a bipolar junction transistor chip, an insulated gate bipolar transistor chip, or a combination of at least two of them.

3. The improved packaging structure of a power semiconductor die according to claim 2, wherein: Metal oxide semiconductor chips, bipolar junction transistor chips, and insulated gate bipolar transistor chips are used for switching functions.

4. The improved packaging structure of a power semiconductor module according to claim 2, wherein: The diode chip is used for rectification.

5. The improved packaging structure of a power semiconductor module according to claim 2, wherein: The device also includes at least one set of control terminals for receiving at least one external control signal to determine whether the at least one chip is turned on.

6. The improved packaging structure of a power semiconductor module according to claim 1, wherein: The number of the at least one copper nut terminal is at least one.

7. The improved packaging structure of a power semiconductor module according to claim 1, wherein: The circuit substrate further includes at least one electronic component connected to the chip to form the power semiconductor module.

8. An improved packaging structure for a power semiconductor module, characterized in that: include: a heat dissipation base; At least one circuit substrate is disposed on the heat dissipation base, and the circuit substrate includes at least one chip, which constitutes a power semiconductor module; At least one copper nut terminal, disposed on the heat sink or the circuit substrate, the copper nut terminal serving as a bridge between external current and internal current of the power semiconductor module, wherein the chip is electrically connected to the copper nut terminal via a plurality of wires, and the copper nut terminal serves to conduct current; a plastic shell side wall, which is disposed around the heat dissipation base, with a filling space formed inside the plastic shell side wall, wherein the height of the plastic shell side wall is lower than the height of the copper nut terminal; and An insulating glue is injected into the filling space to cover the circuit substrate, and the injection height of the insulating glue does not exceed the height of the copper nut terminal. The at least one chip is a diode chip and is used for rectification.

Images