N-type 4H silicon carbide single crystal growth equipment
Through the innovative design of n-type 4H silicon carbide single crystal growth equipment, the difficulty in preparing high-quality, large-size silicon carbide single crystal materials has been solved, the wafer size has been increased and the defect density has been reduced, thereby reducing device costs.
Patent Information
- Application Number
- CN202422847699.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-21
- Publication Date
- 2025-10-17
- Estimated Expiration
- 2034-11-21
AI Technical Summary
In the existing technology, the preparation of high-quality, large-size silicon carbide single crystal materials has problems such as small wafer size and high defect density, resulting in high device costs.
The system uses n-type 4H silicon carbide single crystal growth equipment, combined with the superposition of low vacuum and high vacuum devices, equipped with a Pirani vacuum gauge and an ionization vacuum gauge for precise pressure control. The equipment is cooled by a circulating cooling water supply system, and the temperature is accurately measured with an infrared thermometer to achieve precise control of the temperature, pressure and cooling heat dissipation in the vacuum chamber.
The stability of the crystal growth process has been improved, and the wafer size of silicon carbide single crystal materials can be continuously increased, the defect density can be reduced, and the equipment operating costs can be reduced.
Smart Images
Figure CN223445687U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of silicon carbide single crystal growth, in particular to n-type 4H silicon carbide single crystal growth equipment. Background Art
[0002] Modern electronic systems and equipment are increasingly demanding power electronics, demanding not only higher power density and energy efficiency but also extreme performance and resistance to harsh environments. Silicon carbide power electronics, with superior properties exceeding those of single-crystal silicon devices, can meet the emerging demands of 5G information technology infrastructure. They address the significant energy consumption bottlenecks facing information infrastructure such as data centers and wireless base stations, support the miniaturization and lightweighting of IT mobile smart terminals, and improve their battery life. These efforts underpin the urgent industrial development needs of new energy vehicles, smart energy, rail transit, intelligent manufacturing, and other key application areas of this new infrastructure.
[0003] Semiconductor materials and equipment are the core foundation of information technology. Each generation of materials creates a new generation of equipment, and each generation of technology creates a new industry. Regarding the cost of silicon carbide devices, the substrate accounts for as much as 50% of the device price due to the difficulty of the material preparation process, low yield, and expensive equipment. Producing high-quality, large-scale silicon carbide single crystals is the primary challenge in the development of silicon carbide technology. Continuously increasing wafer size and reducing defect density (micropipes, dislocations, stacking faults, etc.) are key development directions. Utility Model Content
[0004] In order to solve the problems in the background technology, the present invention proposes an n-type 4H silicon carbide single crystal growth equipment, which can continuously increase the wafer size of the silicon carbide single crystal material and reduce the defect density.
[0005] To solve the above problems, the present invention adopts the following technical solution: an n-type 4H silicon carbide single crystal growth equipment, including an equipment frame platform, an operating platform, a power system, a control system, an elevator assembly and a vacuum chamber assembly, wherein the operating platform, the power system and the control system are all arranged on one side of the equipment frame platform, the vacuum chamber assembly is arranged on the equipment frame platform, the elevator assembly is arranged on the equipment frame platform corresponding to the vacuum chamber assembly, the power system and the control system are both electrically connected to the vacuum chamber assembly, and further comprising:
[0006] an air path panel assembly, the air path panel assembly being arranged outside the vacuum chamber assembly and being used for filling the vacuum chamber assembly with an inert gas;
[0007] a circulating cooling water supply system, the circulating cooling water supply system being arranged on the equipment frame platform and being used to cool the power supply system, the hoist assembly and the vacuum chamber assembly;
[0008] A vacuum detection device, comprising a detection pipeline, a Pirani vacuum gauge and an ionization gauge vacuum gauge, the detection pipeline is connected to be arranged on the vacuum cavity assembly, and the Pirani vacuum gauge and the ionization gauge vacuum gauge are installed on the detection pipeline;
[0009] The vacuum cavity assembly comprises a vacuum chamber, a vacuum furnace cover, a low-vacuum pumping device, a high-vacuum pumping device, an infrared temperature detector and a gas release valve, the vacuum furnace cover is arranged on the top of the vacuum chamber, the elevator assembly is connected in cooperation with the vacuum furnace cover, an induction heater for providing heating is arranged in the vacuum chamber, the infrared temperature detector is arranged on the vacuum furnace cover and is used for temperature measurement in the vacuum chamber, the low-vacuum pumping device and the high-vacuum pumping device are arranged on the outer wall of the vacuum chamber and are in communication with the vacuum chamber respectively, and the gas release valve is arranged in communication on the outer side wall of the vacuum chamber.
[0010] A temperature field lifting and rotating assembly is arranged in the vacuum chamber and is used for rotating and lifting a graphite crucible placed in the vacuum chamber, and the graphite crucible is used for storing silicon carbide raw materials.
[0011] Further, the low-vacuum pumping device comprises a rotary vane vacuum pump, a vacuum air pumping pipeline, a high-vacuum pneumatic angle valve and a pressure control butterfly valve, the outer side of the vacuum chamber is connected with the vacuum air pumping pipeline, the inner end of the vacuum air pumping pipeline extends into the vacuum chamber, the outer end of the vacuum air pumping pipeline is connected with the rotary vane vacuum pump, the high-vacuum pneumatic angle valve is arranged on the vacuum air pumping pipeline, and the pressure control butterfly valve is arranged on the vacuum air pumping pipeline between the high-vacuum pneumatic angle valve and the vacuum chamber.
[0012] Further, the high-vacuum pumping device comprises a molecular pump, a vacuum straight elbow and an ultra-high vacuum plug-in valve, the inner end of the vacuum straight elbow is in communication with the vacuum chamber, the outer end of the vacuum straight elbow is connected with the molecular pump, and the ultra-high vacuum plug-in valve is arranged on the vacuum straight elbow.
[0013] Still further, the gas path panel assembly comprises a plurality of groups of parallel arranged gas inlet structures, each of the plurality of groups of gas inlet structures comprises a gas filter, a diaphragm valve, a gas mass flow meter and a check valve which are sequentially connected, the gas inlet end of the gas filter is used for filling inert gas, and the gas outlet end of the check valve is used for communicating with the vacuum chamber.
[0014] Further, the circulating cooling water supply system comprises a water inlet pipe assembly and a water return pipe assembly, the water inlet pipe assembly is in circulation communication with the water return pipe assembly, the water inlet pipe assembly and the water return pipe assembly each comprise a water flow pipeline and a water pressure gauge, a plurality of ball valves, a plurality of water flow meters and a plurality of water temperature sensors arranged on the water flow pipeline, and the plurality of ball valves are in one-to-one correspondence with the power supply system, the elevator assembly and the vacuum cavity assembly.
[0015] Further, the control system is a PLC programmed automatic control, and the control system is provided with an alarm for water, power and gas stop alarm.
[0016] Further, the vacuum furnace cover is provided with a sapphire glass window for observing the reaction inside the vacuum cavity.
[0017] The utility model discloses the beneficial effects: the utility model discloses through the superposition use of low vacuum pumping device and high vacuum pumping device realizes the low vacuum and high vacuum of vacuum cavity, and through the measurement of low vacuum and high vacuum of pirani vacuum gauge and ionization gauge vacuum gauge respectively and the accurate control pressure in vacuum cavity, sets up the circulating cooling water supply system and cools each part of vacuum cavity assembly, power supply system and elevator assembly, guarantees the normal operation of equipment, and through infrared thermometer cooperates the power accurate measurement temperature in vacuum cavity of power supply system, compared with traditional silicon carbide growth device, the utility model realizes the accurate control of temperature, pressure and cooling heat dissipation in vacuum cavity, makes the crystal growing process more stable, can continuously increase the wafer size of silicon carbide single crystal material, reduces the defect density. BRIEF DESCRIPTION OF DRAWINGS
[0018] The utility model is further explained below in connection with the drawings and examples.
[0019] Fig. 1 It is the three-dimensional structure schematic diagram of the utility model;
[0020] Fig. 2 It is the structure schematic diagram of vacuum cavity assembly;
[0021] Fig. 3 It is the structure schematic diagram of gas circuit panel assembly;
[0022] Fig. 4 It is the structure schematic diagram of circulating cooling water supply system.
[0023] 1, equipment frame platform; 2, operation platform; 3, power supply system; 4, control system; 5, elevator assembly; 6, vacuum cavity assembly; 7, gas path panel assembly; 8, circulating cooling water supply system; 9, vacuum detection device; 10, detection pipeline; 11, pirani vacuum gauge; 12, vacuum chamber; 13, vacuum furnace cover; 14, low vacuum pumping device; 15, high vacuum pumping device; 16, infrared thermometer; 17, air release valve; 18, rotary vane vacuum pump; 19, vacuum air pumping pipeline; 20, high vacuum pneumatic angle valve; 21, pressure control butterfly valve; 22, molecular pump; 23, vacuum elbow; 24, ultra-high vacuum plug valve; 25, gas filter; 26, diaphragm valve; 27, gas mass flow meter; 28, check valve; 29, water flow pipeline; 30, water pressure gauge; 31, ball valve; 32, water flow meter; 33, water temperature sensor; 34, sapphire glass window. DETAILED DESCRIPTION
[0024] The technical solutions in the embodiments of the utility model will be clearly and completely described below with reference to the drawings in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the utility model.
[0025] The low vacuum and high vacuum of the vacuum chamber 12 are realized by the superimposed use of the low vacuum pumping device 14 and the high vacuum pumping device 15, and the pressure in the vacuum chamber 12 is measured and accurately controlled by the pirani vacuum gauge 11 and the ionization gauge vacuum gauge respectively, the circulating cooling water supply system 8 is arranged to cool each part of the vacuum cavity assembly 6, the power supply system 3 and the elevator assembly 5, so as to ensure the normal operation of the equipment, and the infrared thermometer 16 is used to cooperate with the power of the power supply system 3 to accurately measure the temperature in the vacuum chamber 12. Compared with the traditional silicon carbide growth device, the utility model realizes the accurate control of the temperature, pressure and cooling heat dissipation in the vacuum chamber 12, so that the crystal growth process is more stable, the wafer size of the silicon carbide single crystal material can be continuously increased, and the defect density is reduced.
[0026] Specifically, as Figs. 1 to 4As shown, an n-type 4H silicon carbide single crystal growth equipment includes a device frame platform 1, an operating platform 2, a power supply system 3, a control system 4, an elevator assembly 5 and a vacuum cavity assembly 6, the operating platform 2, the power supply system 3 and the control system 4 are arranged on one side of the device frame platform 1, the vacuum cavity assembly 6 is arranged on the device frame platform 1, the elevator assembly 5 is arranged on the device frame platform 1 corresponding to the vacuum cavity assembly 6, the power supply system 3 and the control system 4 are electrically connected with the vacuum cavity assembly 6, and the equipment further comprises:
[0027] A gas path panel assembly 7 is arranged outside the vacuum cavity assembly 6 for filling inert gas into the vacuum cavity assembly 6.
[0028] A circulating cooling water supply system 8 is arranged on the device frame platform 1 and is used for cooling the power supply system 3, the elevator assembly 5 and the vacuum cavity assembly 6.
[0029] A vacuum detection device 9 includes a detection pipeline 10, a Pirani vacuum gauge 11 and an ionization gauge vacuum gauge, the detection pipeline 10 is connected to be arranged on the vacuum cavity assembly 6, and the Pirani vacuum gauge 11 and the ionization gauge vacuum gauge are installed on the detection pipeline 10.
[0030] The vacuum cavity assembly 6 includes a vacuum cavity 12, a vacuum furnace cover 13, a low-vacuum pumping device 14, a high-vacuum pumping device 15, an infrared temperature detector 16 and a gas release valve 17, the vacuum furnace cover 13 is arranged on the top of the vacuum cavity 12, the elevator assembly 5 is connected in cooperation with the vacuum furnace cover 13, an induction heater for providing heating is arranged in the vacuum cavity 12, the infrared temperature detector 16 is arranged on the vacuum furnace cover 13 and is used for measuring the temperature in the vacuum cavity 12, the low-vacuum pumping device 14 and the high-vacuum pumping device 15 are respectively arranged on the outer wall of the vacuum cavity 12 and are in communication with the vacuum cavity 12, and the gas release valve 17 is arranged in communication on the outer side wall of the vacuum cavity 12.
[0031] A temperature field lifting and rotating assembly is arranged in the vacuum cavity 12 and is used for rotating and lifting a graphite crucible placed in the vacuum cavity 12, and the graphite crucible is used for storing silicon carbide raw materials.
[0032] Further, the low vacuum pumping device 14 comprises a rotary vane vacuum pump 18, a vacuum pumping pipe 19, a high vacuum pneumatic angle valve 20 and a pressure control butterfly valve 21, the vacuum pumping pipe 19 is connected to the outside of the vacuum chamber 12, the inner end of the vacuum pumping pipe 19 extends into the vacuum chamber 12, the outer end of the vacuum pumping pipe 19 is connected to the rotary vane vacuum pump 18, the high vacuum pneumatic angle valve 20 is arranged on the vacuum pumping pipe 19, and the pressure control butterfly valve 21 is arranged on the vacuum pumping pipe 19 between the high vacuum pneumatic angle valve 20 and the vacuum chamber 12.
[0033] Further, the high vacuum pumping device 15 comprises a molecular pump 22, a vacuum elbow 23 and an ultra-high vacuum plug valve 24, the inner end of the vacuum elbow 23 is connected to the vacuum chamber 12, and the outer end of the vacuum elbow 23 is connected to the molecular pump 22, and the ultra-high vacuum plug valve 24 is arranged on the vacuum elbow 23.
[0034] Further, the gas path panel assembly 7 comprises a plurality of groups of parallel arranged gas inlet structures, each of the plurality of groups of gas inlet structures comprises a gas filter 25, a diaphragm valve 26, a gas mass flow meter 27 and a check valve 28 arranged in sequence, the gas inlet end of the gas filter 25 is used to fill with inert gas, and the gas outlet end of the check valve 28 is used to communicate with the vacuum chamber 12.
[0035] Further, the circulating cooling water supply system 8 comprises a water inlet pipe assembly and a water return pipe assembly, the water inlet pipe assembly and the water return pipe assembly are in circulation communication, the water inlet pipe assembly and the water return pipe assembly each comprise a water flow pipe 29, a water pressure gauge 30, a plurality of ball valves 31, a plurality of water flow meters 32 and a plurality of water temperature sensors 33 arranged on the water flow pipe 29, and the plurality of ball valves 31 are in one-to-one correspondence with the power supply system 3, the elevator assembly 5 and the vacuum cavity assembly 6.
[0036] Further, the control system 4 is a PLC programmed automatic control, and an alarm for water, power and gas stop alarm is arranged in the control system 4.
[0037] Further, the vacuum furnace cover 13 is provided with a sapphire glass window 34 for observing the internal reaction of the vacuum chamber 12.
[0038] The utility model discloses a low vacuum and high vacuum are realized to vacuum chamber 12 through the superposition use of low vacuum device 14 and high vacuum device 15 when using, and through the measurement of low vacuum and high vacuum and the accurate control pressure in vacuum chamber 12 of ion gauge vacuum gauge 11 and ion gauge respectively, set up circulating cooling water supply system 8 and cool the parts of vacuum cavity assembly 6, power system 3 and hoist assembly 5 to guarantee the normal operation of equipment, and through infrared thermometer 16 cooperation power accurate measurement temperature in vacuum chamber 12 of power system 3.
[0039] The above merely describes preferred embodiments of the utility model and is not intended to limit the utility model, and any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the utility model shall be included in the protection scope of the utility model.
Claims
1. An n-type 4H silicon carbide single crystal growth equipment, comprising an equipment frame platform (1), an operating platform (2), a power supply system (3), a control system (4), an elevator assembly (5) and a vacuum chamber assembly (6), wherein the operating platform (2), the power supply system (3) and the control system (4) are all arranged on one side of the equipment frame platform (1), the vacuum chamber assembly (6) is arranged on the equipment frame platform (1), the elevator assembly (5) is arranged on the equipment frame platform (1) corresponding to the vacuum chamber assembly (6), the power supply system (3) and the control system (4) are both electrically connected to the vacuum chamber assembly (6), and characterized in that: Also includes: an air path panel assembly (7), the air path panel assembly (7) being arranged outside the vacuum chamber assembly (6) and being used for filling the vacuum chamber assembly (6) with an inert gas; a circulating cooling water supply system (8), the circulating cooling water supply system (8) being arranged on the equipment frame platform (1) and being used to cool the power supply system (3), the hoist assembly (5) and the vacuum chamber assembly (6); A vacuum detection device (9), comprising a detection pipe (10), a Pirani vacuum gauge (11), and an ionization gauge vacuum gauge, wherein the detection pipe (10) is connected to the vacuum chamber assembly (6), and the Pirani vacuum gauge (11) and the ionization gauge vacuum gauge are installed on the detection pipe (10); The vacuum chamber assembly (6) includes a vacuum chamber (12), a vacuum furnace cover (13), a low vacuum device (14), a high vacuum device (15), an infrared thermometer (16) and a vent valve (17); the vacuum furnace cover (13) is arranged on the top of the vacuum chamber (12); the lifting machine assembly (5) is connected to the vacuum furnace cover (13); an induction heater for providing heating is arranged in the vacuum chamber (12); the infrared thermometer (16) is arranged on the vacuum furnace cover (13) and is used to measure the temperature in the vacuum chamber (12); the low vacuum device (14) and the high vacuum device (15) are respectively arranged on the outer wall of the vacuum chamber (12) and are in communication with the vacuum chamber (12); the vent valve (17) is arranged on the outer wall of the vacuum chamber (12); A temperature field lifting and rotating assembly is provided in the vacuum chamber (12) and is used for rotating and lifting a graphite crucible placed in the vacuum chamber (12), wherein silicon carbide raw materials are stored in the graphite crucible.
2. The n-type 4H silicon carbide single crystal growth equipment according to claim 1, characterized in that: The low vacuum device (14) includes a rotary vane vacuum pump (18), a vacuum pumping pipe (19), a high vacuum pneumatic angle valve (20) and a pressure control butterfly valve (21); the outer side of the vacuum chamber (12) is connected to the vacuum pumping pipe (19); the inner end of the vacuum pumping pipe (19) extends into the vacuum chamber (12); the outer end of the vacuum pumping pipe (19) is connected to the rotary vane vacuum pump (18); the high vacuum pneumatic angle valve (20) is arranged on the vacuum pumping pipe (19); and the pressure control butterfly valve (21) is arranged on the vacuum pumping pipe (19) between the high vacuum pneumatic angle valve (20) and the vacuum chamber (12).
3. The n-type 4H silicon carbide single crystal growth equipment according to claim 1, characterized in that: The high vacuum device (15) comprises a molecular pump (22), a vacuum right-angle elbow (23) and an ultra-high vacuum plug-in valve (24); the inner end of the vacuum right-angle elbow (23) is connected to the vacuum chamber (12); the outer end of the vacuum right-angle elbow (23) is connected to the molecular pump (22); and the ultra-high vacuum plug-in valve (24) is arranged on the vacuum right-angle elbow (23).
4. The n-type 4H silicon carbide single crystal growth equipment according to claim 1, characterized in that: The gas path panel assembly (7) includes multiple groups of air intake structures arranged in parallel, each of the multiple groups of air intake structures includes a gas filter (25), a diaphragm valve (26), a gas mass flow meter (27) and a one-way valve (28) arranged in sequence, the air intake end of the gas filter (25) is used to fill with inert gas, and the air outlet end of the one-way valve (28) is used to communicate with the vacuum chamber (12).
5. The n-type 4H silicon carbide single crystal growth equipment according to claim 1, characterized in that: The circulating cooling water supply system (8) includes a water inlet pipe assembly and a water return pipe assembly. The water inlet pipe assembly is in circulation communication with the water return pipe assembly. The water inlet pipe assembly and the water return pipe assembly both include a water flow pipeline (29) and a water pressure gauge (30), a plurality of ball valves (31), a plurality of water flow meters (32) and a plurality of water temperature sensors (33) arranged on the water flow pipeline (29). The plurality of ball valves (31) are connected to the power supply system (3), the hoist assembly (5) and the vacuum chamber assembly (6) in a one-to-one correspondence.
6. The n-type 4H silicon carbide single crystal growth equipment according to claim 1, characterized in that: The control system (4) is a PLC programmed automatic control system, and an alarm for water, electricity, and gas outages is provided in the control system (4).
7. The n-type 4H silicon carbide single crystal growth equipment according to claim 1, characterized in that: The vacuum furnace cover (13) is provided with a sapphire glass window (34) for observing the reaction inside the vacuum chamber (12).