Chip structure

Abstract

The chip structure comprises a first base layer, a metal structure and a thin film layer, the first base layer comprises a first surface, the first surface comprises a first area and a second area, the metal structure is located in the first area, and the thin film layer is located in the second area. The thin film layer covers the surface, deviating from the first region, of the metal structure and extends to the second region; therefore, the film layer is prevented from being damaged during forming.

Description

TECHNICAL FIELD

[0001] The utility model relates to the field of semiconductor package testing, especially to a chip structure. BACKGROUND

[0002] In prior art, image sensor chip package structure usually includes cover plate, chip and support dam, the support dam is generally mixed support dam of organic material and metal material, the full metal manufacturing cost is too high, the metal support dam improves the air tightness, and the organic support dam improves more supportability.

[0003] When the image sensor chip needs to improve optical performance, optical thin film such as IR, AR film, etc. is plated on the glass cover plate, which is used to increase the light transmittance of certain waveband or reduce the light transmittance of certain waveband / cut off the light of certain waveband. The thickness of the optical thin film is related to the waveband to be increased or cut off, and in the process of plating the film glass cover plate and manufacturing the metal support dam, the thin film will be in contact with various acid and alkaline chemicals, which is easy to be damaged and thus leads to the decline of optical performance. SUMMARY

[0004] One of the purposes of the utility model is to provide a chip structure to solve the technical problem of optical thin film damage affecting optical performance in prior art.

[0005] To achieve the above-mentioned one of the purposes of the utility model, one embodiment of the utility model provides a chip structure, which comprises a first base layer, a metal structure and a thin film layer, the first base layer comprises a first surface, the first surface comprises a first area and a second area, the metal structure is located in the first area, and the thin film layer covers the surface of the metal structure away from the first area and extends to the second area.

[0006] As a further improvement of one embodiment of the utility model, the chip structure comprises a second base layer arranged opposite to the first base layer, the metal structure comprises a metal support dam for bonding connection of the first base layer and the second base layer, and the thin film layer located away from the first surface of the metal support dam is connected with the second base layer.

[0007] As a further improvement of one embodiment of the utility model, the metal support dam is in the shape of a ring, and the metal structure comprises at least two rings of metal support dams.

[0008] As a further improvement of one embodiment of the utility model, the second base layer comprises a functional area arranged on a functional surface thereof, the functional surface faces the first surface, and the metal support dam is located outside the functional area.

[0009] As a further improvement of the embodiment of the present application, the second base layer comprises a functional area arranged on the functional surface and a solder pad area arranged outside the functional area, the functional surface faces the first surface, and the metal support dam comprises a second metal support dam arranged in the solder pad area.

[0010] As a further improvement of the embodiment of the present application, the chip structure comprises a heat dissipation column penetrating the first base layer along the thickness direction of the first base layer, and the heat dissipation column penetrates the first surface and is connected to the second metal support dam.

[0011] As a further improvement of the embodiment of the present application, the first base layer comprises a second surface arranged opposite to the first surface, the chip structure comprises a heat dissipation fin arranged on the second surface, and the heat dissipation column penetrates the second surface and is connected to the heat dissipation fin.

[0012] As a further improvement of the embodiment of the present application, the thin film layer covers the surface of the heat dissipation fin away from the first base layer.

[0013] As a further improvement of the embodiment of the present application, the metal structure comprises a metal light-shielding sheet, the first base layer comprises a second surface arranged opposite to the first surface, and the metal light-shielding sheet is arranged on the first surface and / or the second surface.

[0014] As a further improvement of the embodiment of the present application, the chip structure comprises a second base layer arranged opposite to the first base layer, a metal support dam and / or an organic support dam for bonding the first base layer and the second base layer, and the metal light-shielding sheet is thinner than the metal support dam and / or the organic support dam.

[0015] Compared with the prior art, the chip structure provided by the present application is formed by first covering the first area with the metal structure and then covering the surface of the metal structure and the second area with the thin film layer, so that the thin film layer is prevented from being damaged during the forming process and the optical performance of the thin film layer is ensured. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 is a schematic view of the chip structure in the first embodiment of the present application.

[0017] Figure 2 is a schematic view of the chip structure in the second embodiment of the present application.

[0018] Figure 3 is a schematic view of the chip structure in the third embodiment of the present application.

[0019] Figure 4 is a schematic view of the chip structure in the fourth embodiment of the present application.

[0020] Figure 5is a schematic diagram of a chip structure in other embodiments of the utility model.

[0021] Figures 6-7 is a schematic diagram of a wafer level packaging method in an embodiment of the utility model.

[0022] Figures 8-10 is a schematic diagram of a wafer level packaging method in another embodiment of the utility model.

[0023] Figure 11 is a schematic diagram of a wafer level packaging method in still another embodiment of the utility model. DETAILED DESCRIPTION

[0024] The utility model will be described in detail below in combination with the specific embodiments shown in the drawings. But these embodiments do not limit the utility model, and the structural, method or functional changes made by the ordinary skilled in the art according to these embodiments are all included in the protection scope of the utility model.

[0025] It should be noted that the term "comprising" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or equipment. In addition, the terms "first", "second", "third", "fourth" and the like are only for descriptive purposes, and cannot be understood as indicating or implying relative importance.

[0026] The term "connection", "connected to" or any other variant is intended to cover various relative positions of the connection relationship, so that it includes direct connection or indirect connection. Among them, the direct connection can be formed by the air path pipeline, the indirect connection can be the connection relationship formed by devices such as valve body, sensor, etc., can be the connection relationship formed by air path components such as brake control unit, or can be the connection relationship formed by any other medium such as air.

[0027] Please see Figure 1 is a structural schematic diagram of a chip structure 1000 provided by the first embodiment of the utility model.

[0028] The chip structure 1000 includes a first base layer 10, a metal structure 40 and a thin film layer 50, the first base layer 10 includes a first surface, the first surface includes a first area and a second area, the metal structure 40 is located in the first area, and the thin film layer 50 covers the surface of the metal structure 40 away from the first area and extends to the second area.

[0029] In prior art, the thin film layer 50 covers the first surface, and then the metal structure 40 covers the thin film layer 50. Since the metal structure 40 will undergo chemical etching process in the manufacturing process, the thin film layer 50 will be affected, and then the optical performance of the chip structure 100 will be affected.

[0030] In the present application, the metal structure 40 is manufactured and covers the first area, and then the thin film layer 50 is formed to ensure better optical performance of the thin film layer 50.

[0031] The chip structure 1000 includes a second base layer 20 opposite to the first base layer 10, and the metal structure 40 includes a metal support dam 41 for bonding the first base layer 10 and the second base layer 20, and the thin film layer 50 is located on the side of the metal support dam 41 away from the first surface and connected to the second base layer 20. In this way, the metal support dam 41 and the thin film layer 50 on the surface thereof form a sealed area 401.

[0032] The first base layer 10 can be a cover base layer, and the second base layer 20 can be a device base layer. The base layer 20 includes a function area 21 and a pad area 22 electrically coupled, and the sealed area 401 is used to cover the function area 21.

[0033] The metal support dam 41 is in a ring shape. It should be noted that the metal support dam 41 can be a continuous ring structure or an intermittent ring structure. The metal structure 40 includes at least two metal support dams 41. Referring to Figure 5 It can be seen that the continuous ring metal support dam 41 structure provides better airtightness; the intermittent ring metal support dam 41 structure is suitable for being arranged in the pad area 22 for heat dissipation while preventing the interval arranged pad area 22 from forming a loop.

[0034] The second base layer 20 includes a function surface facing the first surface, and the function area 21 is arranged on the function surface. The metal support dam 41 is located outside the function area 21 and mainly plays a role of sealing the function area 21.

[0035] As shown in Figure 1 The metal support dam 41 includes a first metal support dam 411 located outside the pad area 22, close to the outer periphery of the chip structure 1000, and close to the outer side for sealing to prevent moisture and water vapor from entering.

[0036] As shown in Figure 3As shown, the metal support dam 41 includes a second metal support dam 412 located at the solder pad region 22, which is not only used for strengthening support, but also used for enhancing heat dissipation. In the third embodiment, the second metal support dam 412 is arranged at the solder pad region 22. Since the surface of the second metal support dam 412 facing the functional surface is covered with the film layer 50, the second metal support dam 412 cannot be electrically connected to the solder pad region 22, but can conduct the heat dissipated by the solder pad region 22. The second metal support dam 412 can be arranged in a continuous ring or an intermittent ring. It can be understood that in other technical solutions, if the second metal support dam 412 is electrically connected to the solder pad region 22, the second metal support dam 412 can only be arranged in an intermittent ring structure.

[0037] The chip structure 1000 includes a heat dissipation column 42 penetrating the first base layer 10 along the thickness direction thereof, and the heat dissipation column 42 is connected to the second metal support dam 412 through the first surface. Referring to Figure 3 , the heat cannot be dissipated through the second metal support dam 412 only, and therefore the heat dissipation column 42 penetrates the first base layer 10 to conduct the heat out of the first base layer 10.

[0038] The first base layer 10 includes a second surface arranged opposite to the first surface, and the chip structure 1000 includes a heat dissipation fin 43 arranged at the second surface, and the heat dissipation column 42 is connected to the heat dissipation fin 43 through the second surface. Referring to Figure 3 , the cross section of the heat dissipation column 42 is circular, and the heat dissipation area is small. The one end of the heat dissipation column 42 is connected to the heat dissipation fin 43 having a larger area, which is more conducive to assisting heat dissipation.

[0039] The film layer 50 covers the surface of the heat dissipation fin 43 away from the first base layer 10. According to the same principle, in order to protect the good optical performance of the film layer 50, the heat dissipation fin 43 is arranged to be formed at the second surface first, and then the film layer 50 is formed on the surface of the heat dissipation fin 43.

[0040] The metal structure 40 includes a metal light shielding sheet 44 arranged at the first surface and / or the second surface of the first base layer 10. In combination with Figure 2 , in the second embodiment, in order to improve the optical performance, sometimes a light shielding layer needs to be made at the outer periphery of the first base layer 10 (corresponding to the outside of the functional region 21 of the second base layer 20) for shielding the stray light and other light having a negative effect on imaging. For the optical film layer 50, the metal light shielding sheet needs to be processed on the film layer 50, which has a risk of damage. Therefore, the same method of first metal structure 40 and then film layer 50 can also be used for manufacturing.

[0041] In combination with Figure 2The metal light-shielding sheet 44 is usually arranged on the second surface, and can also be arranged on the first surface and the second surface.

[0042] It should be noted that the heat sink 43 on the second surface in the third embodiment and the metal light-shielding sheet 44 on the second surface in the second embodiment have similar structures, and the difference lies in that the heat sink 43 can be a common metal, can cover part of the second surface, or can completely cover the second surface, and the key is to be connected with the heat dissipation column 42. The metal light-shielding sheet 44 needs to have corresponding optical properties of light shielding, and must be located outside the functional area 21 and cannot cover the sealing area 401.

[0043] It can be understood that if the heat sink 43 in the third embodiment is selected to be a metal with optical properties of light shielding and is arranged outside the functional area 21, the heat sink 43 can also be equivalent to the metal light-shielding sheet 44.

[0044] In combination Figure 2 The chip structure 100 includes an organic support dam 30 for bonding the first base layer 10 and the second base layer 20, and the metal light-shielding sheet 44 is thinner than the organic support dam 30.

[0045] It can be understood that in the second embodiment, the metal structure 40 includes the metal light-shielding sheet 44 and does not include the metal support dam 41. The metal light-shielding sheet 44 is relatively thin and cannot play a bonding role, so the organic support dam 30 needs to be arranged between the first base layer 10 and the second base layer 20 for bonding.

[0046] It can be understood that the above three embodiments do not conflict with each other and can be combined with each other.

[0047] In combination Figure 4 In the fourth embodiment, the above three embodiments are combined, and the metal structure 40 includes the metal support dam 41, the heat dissipation column 42, the heat sink 43, and the metal light-shielding sheet 44.

[0048] Specifically, the metal support dam 41 includes a first metal support dam 411 and a second metal support dam 412. The heat sink 43 partially covers the second surface. If the heat sink 43 is required to have a light-shielding function, a metal with light-shielding properties is selected, and the outside of the second surface is covered. The metal light-shielding sheet 44 is located inside the second metal support dam 412 and outside the functional area 21.

[0049] In combination Figure 4 The chip structure 1000 can also include an organic support dam 30, which is formed as a hybrid support dam, saves cost, and enhances sealing and support. In one embodiment, the organic support dam 30 is filled between the plurality of metal support dams 41.

[0050] Combine Figure 5 As shown, in other embodiments, a plurality of hybrid support dams are arranged at intervals, or the organic support dam 30 and the metal support dam 41 are arranged at intervals. In short, different arrangements can be made as needed, and this case does not impose any further limitations.

[0051] The wafer-level packaging method for forming the chip structure 1000 is described in detail below. Figures 6-7 As shown, the wafer-level packaging method includes the following steps:

[0052] A first wafer 100 and a second wafer 200 are provided, and a metal structure 40 is fabricated on the first wafer 100. The first wafer 100 is a cover wafer, and the second wafer 200 is a device wafer. The second wafer 200 includes an electrically coupled functional area 21 and a bonding pad area 22. The metal structure 40 is located on the surface of the first wafer 100.

[0053] A thin film 500 is formed on the surface of the first wafer 100 and the metal structure 40. The thin film 500 can be formed by sputtering, evaporation, etc. The thin film 500 covers the surface of the metal structure 40 and the surface of the first wafer 100 except the metal structure 40.

[0054] The first wafer 100 and the second wafer 200 are bonded together.

[0055] In this way, the use of liquid etching during the process of manufacturing the metal structure 40 will not affect the thin film 500 manufactured later, thereby ensuring the optical performance of the thin film 500.

[0056] The “fabrication of the metal structure 40” includes:

[0057] Combine Figure 6 As shown in FIG. 1 , a metal seed layer 110 is formed on the surface of the first wafer 100. The metal seed layer 110 is usually thin and can be formed by sputtering, evaporation, chemical plating, etc. The metal seed layer 110 basically covers the first surface of the first wafer 100. In another embodiment, referring to FIG. Figure 8 b. The metal seed layer 110 may also cover two opposite surfaces of the first wafer 100 .

[0058] Combine Figure 6 As shown in b-6c, a metal structure 40 is manufactured on the surface of the metal seed layer 110. The metal seed layer 110 is conducive to the growth of the metal structure 40.

[0059] Combine Figure 6 As shown in FIG. 4 , the metal seed layer 110 in the remaining area outside the metal structure is removed, and the metal structure 40 is retained. The metal seed layer 110 is generally removed by etching.

[0060] It can be understood that the metal structure 40 in any embodiment needs to be made into a metal seed layer 110 before being made, which is convenient for the growth of the metal structure 40 later.

[0061] In combination with Figure 6 As shown in b-6d, “making the metal structure 40” further includes:

[0062] Coating a photoresist on the surface of the metal seed layer 110 and patterning to form a transition glue layer 120 and a through slot, the through slot exposes the metal seed layer 110; the position exposed by the through slot is the position where the metal structure 40 needs to be made;

[0063] Electroplating to form the metal structure 40 in the through slot; further making the metal structure 40 thickened on the metal seed layer 110, and selecting the electroplating mode.

[0064] Removing the transition glue layer 120.

[0065] In the first embodiment, the metal structure 40 includes a metal support dam 41.

[0066] In the second embodiment, the metal structure 40 includes a metal light shield 44.

[0067] The above method of making the metal structure 40 is suitable for both the metal support dam 41 in the first embodiment and the metal light shield 44 in the second embodiment. It should be noted that when making the metal light shield 44 on the second surface, the second surface of the first wafer 100 can also be formed into a metal seed layer 110 and patterned, and then the metal light shield 44 is made.

[0068] In other embodiments, if both the metal support dam 41 and the metal light shield 44 are needed, the above making steps can be repeated once, and the metal light shield 44 is made first and then the metal support dam 41 is made.

[0069] In other embodiments, when the metal structure 40 includes the metal support dam 41 or the metal light shield 44, it can also be made by peeling off in combination with Figure 11 As shown in b-6d, “making the metal structure 40” further includes:

[0070] Referring to Figure 11 a, making an intermittent array of peeling layers 120' and a filling slot between adjacent peeling layers 120', the filling slot exposes the surface of the first wafer 100. Similarly, the position exposed by the filling slot is the position where the metal structure 40 needs to be made.

[0071] Referring to Figure 11b. On the surface of the release layer 120' and in the filling groove, a metal structure 40 is made. The metal structure 40 can be made by evaporation or sputtering. Due to the process and the filling groove, the metal structure 40 is thicker in the vertical direction and thinner in the horizontal direction. The metal structure 40 is not formed on the inner side wall of the filling groove and near the first wafer 100.

[0072] Referring to Figure 11 c. The release layer 120' is released, and the metal structure 40 on the surface of the release layer is removed. The metal structure 40 in the filling groove is retained to form the required metal support dam 41 or metal light shield 44.

[0073] The above-mentioned release method is not suitable for a metal structure 40 with a higher thickness, because the height of the metal structure 40 needs to be less than the height of the release layer 120'. However, the higher the height of the metal structure 40, the more difficult it is for the release solution to flow into the area of the inner side wall of the filling groove (the area without metal coverage), and the more difficult it is to release.

[0074] The "making an intermittently arranged release layer 120' and filling groove" includes: making a release glue on the surface of the first wafer 100 and patterning the release glue to form the release layer 120' and the filling groove. The release glue can be made by coating or film pasting.

[0075] The filling groove has a trapezoidal shape, and the filling groove has a first opening on the first surface and a second opening away from the first surface. The first opening is larger than the second opening.

[0076] In combination Figure 8 As shown, in the third embodiment, "making a metal seed layer 110 on the surface of the first wafer 100" includes:

[0077] Referring to Figure 8 a-8b. A through hole is made on the first wafer 100, and a metal is plated on the surface of the first wafer 100 and in the through hole to form a metal seed layer 110 on the surface of the first wafer 100 and a heat dissipation column 42 in the through hole.

[0078] Since the heat dissipation column 42 needs to be formed, the embodiment needs to make the heat dissipation column 42 before making the metal support dam 41.

[0079] In the third embodiment, after "forming the metal seed layer 110", it includes:

[0080] The metal seed layer 110 is patterned to form a metal heat dissipation sheet 43 on the surface of the first wafer 100 away from the surface of the second wafer 200, and the metal seed layer 110 on the surface of the first wafer 100 close to the surface of the second wafer 200 is retained. Referring to Figure 9a, an additional step of patterning the metal seed layer 110 is added, so that one side of the first wafer 100 is formed into a metal heat sink 43 or can be made into a metal heat sink 43, and the other side is still a structure of the metal seed layer 110. The metal heat sink 43 is located at the outer periphery of the first wafer 100. If the metal heat sink 43 needs to cover the entire first wafer 100, this step is not needed.

[0081] In the third embodiment, "making the metal structure 40" includes:

[0082] A photoresist is coated on the surface of the metal seed layer 110 and patterned to form a transition layer 120 and a through slot, and the through slot exposes the metal seed layer 110; the position exposed by the through slot is the position where the metal structure 40 needs to be made; refer to Figure 6 the steps shown in FIG. 4.

[0083] The metal structure 40 is formed by electroplating in the through slot;

[0084] The transition layer 120 is removed.

[0085] It can be understood that the metal structure 40 here is a second metal support dam 412, which is used to connect to the heat dissipation column 42.

[0086] In the fourth embodiment, in combination with Figures 9-10 shown in FIG. 5, "making the metal structure 40" includes:

[0087] Refer to Figure 9 b, a photoresist is coated on the surface of the metal seed layer 110 for the first time and patterned to form a first transition layer 112 and a first through slot, and the first through slot exposes the metal seed layer 110. The position exposed by the first through slot is the position where the metal light shield 44 needs to be made.

[0088] The metal light shield 44 is formed by electroplating for the first time in the first through slot.

[0089] Refer to Figure 9 c, a photoresist is coated on the surface of the metal light shield 11 and the first transition layer 121 for the second time and patterned to form a second transition layer 122 and a second through slot, and the second through slot exposes the metal light shield 44. The position exposed by the second through slot is the position where the metal support dam 41 needs to be made.

[0090] The metal support dam 41 is formed by electroplating for the second time in the second through slot; the metal structure 40 includes the metal light shield 44 and the metal support dam 41.

[0091] Refer to Figure 9 d, the first transition layer 121 and the second transition layer 122 are removed.

[0092] It can be understood that the finished metal support dam 41 includes a first metal support dam 411 outside the pad area 22 and a second metal support dam 412 in the pad area 22, and the second metal support dam 412 is connected to the heat dissipation column 42. The manufacturing method of the heat dissipation column 42 and the metal heat dissipation fin 43 is referred to the third embodiment, which will not be described here.

[0093] It should be noted that the metal structure 40 formed in any of the above embodiments is the same for manufacturing the optical film 500, which is referred to Figure 7 a, 10a; the bonding connection between the first wafer 100 and the second wafer 200 is also the same, which is referred to Figure 7 c, 10c.

[0094] In one embodiment, the "bonding connection between the first wafer 100 and the second wafer 200" includes: bonding connection between the film on the surface of the metal structure 40 and the second wafer 200. When the metal structure 40 includes the metal support dam 41, the connection between the first wafer 100 and the second wafer 200 can be realized through the metal support dam 41.

[0095] In one embodiment, the "bonding connection between the first wafer 100 and the second wafer 200" includes:

[0096] An organic support dam 30 is manufactured between the first wafer 100 and the second wafer 200, and the organic support dam 30 connects the film on the surface of the first wafer 100 and the second wafer 200. When the metal structure 40 does not include the metal support dam, but only includes the metal light shield 44, the organic support dam 30 needs to be further manufactured to connect the first wafer 100 and the second wafer 200.

[0097] Or even if the metal structure 40 includes the metal support dam 41, the organic support dam 30 can be further manufactured, which is referred to 7b, 10b.

[0098] The "manufacturing of the organic support dam 30" includes: using the 3D printing forming method to manufacture the organic support dam on the surface of the film 500, or coating the photoresist on the surface of the second wafer 200 and patterning to form the organic support dam to protect the film on the surface of the first wafer 100.

[0099] In one embodiment, after the "bonding connection between the first wafer 100 and the second wafer 200", the step of manufacturing a metal bump 60 on the surface of the second wafer 200 away from the first wafer 100 is included, which is referred to 7d, 10c. The metal bump 60 is electrically connected to the pad area 22 of the second wafer 200 to form a wafer level packaging structure. The metal bump 60 is used to be electrically connected to the external circuit.

[0100] Cutting a wafer level package structure to form a single chip structure.

[0101] In other embodiments, after the first wafer 100 and the second wafer 200 are bonded, the method can further include the steps of:

[0102] A through slot is formed on the surface of the second wafer 200 away from the first wafer, and the through slot exposes the solder pad area 22 of the second wafer.

[0103] A soldering post 61 is formed in the through slot to connect to the solder pad area 22.

[0104] A metal structure 40 is formed on the side of the second wafer away from the first wafer, and the metal structure at least includes a metal support dam 41.

[0105] A third wafer is provided, and the third wafer and the second wafer are bonded, specifically, the second wafer 200 and the third wafer are connected through the metal support dam 41. The metal structure 40 is also suitable for a multi-wafer structure arranged in a stack. The third wafer is located on the side of the second wafer away from the first wafer, and the first wafer, the second wafer, and the third wafer are arranged in a stack.

[0106] The third wafer also includes a functional area and a solder pad area located outside the functional area. The metal structure 40 includes a second metal support dam 412 for electrically connecting the soldering post 61, and the second metal support dam 412 electrically connects the soldering post 61 and the solder pad area of the third wafer, thereby achieving electrical connection between adjacent wafers, and is suitable for a multi-wafer stack structure that requires the metal structure 40 to achieve electrical connection.

[0107] The metal structure 40 includes a metal support dam 41, which can achieve the functions of sealed connection and / or metal heat dissipation. The metal structure 40 includes a metal light-shielding sheet 44, which can achieve a better light-shielding effect.

[0108] Any of the technical solutions provided in the foregoing can be formed, and details are not repeated here.

[0109] It should be understood that although the present specification is described in terms of embodiments, not every embodiment contains only one independent technical solution, and the description of the specification is only for the sake of clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can be appropriately combined to form other embodiments that can be understood by those skilled in the art.

[0110] The series of detailed descriptions listed above are only specific descriptions for the feasible implementation manners of the present application, and are not used to limit the protection scope of the present application. Any equivalent implementation manners or changes made without departing from the spirit of the present application should be included in the protection scope of the present application.

Claims

1. A chip structure, characterized in that: include: It includes a first base layer, a metal structure and a thin film layer, wherein the first base layer includes a first surface, the first surface includes a first area and a second area, the metal structure is located in the first area, and the thin film layer covers the surface of the metal structure away from the first area and extends to the second area.

2. The chip structure according to claim 1, characterized in that: The chip structure includes a second base layer arranged opposite to the first base layer. The metal structure includes a metal support dam for bonding the first and second base layers. The thin film layer located on the metal support dam away from the first surface is connected to the second base layer.

3. The chip structure according to claim 2, characterized in that: The metal support dam is in a ring shape, and the metal structure includes at least two circles of metal support dams.

4. The chip structure according to claim 2, characterized in that: The second base layer includes a functional area arranged on a functional surface thereof, the functional surface faces the first surface, and the metal support dam is located outside the functional area.

5. The chip structure according to claim 2, characterized in that: The second base layer includes a functional area provided on its functional surface and a pad area outside the functional area. The functional surface faces the first surface. The metal support dam includes a second metal support dam located in the pad area.

6. The chip structure according to claim 5, characterized in that: The chip structure includes a heat dissipation column penetrating the first base layer along a thickness direction thereof, and the heat dissipation column passes through the first surface and is connected to the second metal support dam.

7. The chip structure according to claim 6, characterized in that: The first base layer includes a second surface opposite to the first surface, the chip structure includes a heat sink disposed on the second surface, and the heat dissipation column passes through the second surface and is connected to the heat sink.

8. The chip structure according to claim 7, characterized in that: The film layer covers a surface of the heat sink facing away from the first base layer.

9. The chip structure according to claim 1, wherein: The metal structure includes a metal light shielding sheet, the first base layer includes a second surface arranged opposite to the first surface, and the metal light shielding sheet is arranged on the first surface and / or the second surface.

10. The chip structure according to claim 9, characterized in that: The chip structure includes a second base layer arranged opposite to the first base layer, a metal support dam and / or an organic support dam for bonding the first and second base layers, and the metal light shielding sheet is thinner than the metal support dam and / or the organic support dam.

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