Cleaning device of chemical mechanical polishing equipment
By setting multiple nozzles on the moisturizing column to clean the key areas of the polishing equipment, the problem of polishing slurry crystallization was solved, ensuring the polishing effect and device performance.
Patent Information
- Application Number
- CN202422974788.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-02
- Publication Date
- 2025-10-21
- Estimated Expiration
- 2034-12-02
Smart Images
Figure CN223455764U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor technology, in particular to a cleaning device of a chemical mechanical polishing equipment. BACKGROUND
[0002] Chemical mechanical polishing (CMP) is a processing technology for removing excess material on the surface of a wafer to achieve global planarization. CMP technology combines the dual effects of chemical corrosion and mechanical polishing, which can ensure material removal efficiency while obtaining a relatively perfect surface, resulting in higher flatness than using chemical polishing or mechanical polishing alone.
[0003] However, in the process of polishing the wafer by CMP at present, there is a problem of crystallization of polishing liquid. For example, during polishing of the wafer by the polishing head on the wafer support table, the polishing liquid will adhere to the outer wall of the polishing head, and if not cleaned in time, crystallization will easily occur. In related technologies, a moisturizing stand is used to moisturize and clean the CMP equipment to prevent crystallization generated during polishing. However, when the moisturizing stand is used for moisturizing and cleaning in the related technologies, the polishing head area, the main shaft and flange connection area, and the general process automation assembly cover plate area are not sufficiently moisturized and cleaned, and the risk of crystallization of the polishing liquid and falling onto the wafer support platform during polishing to affect the polishing effect is still relatively large. CONTENT OF THE UTILITY MODEL
[0004] A series of simplified concepts are introduced in the utility model content part, which will be further described in detail in the specific implementation part. The utility model content part of the present application does not mean to try to limit the key features and necessary technical features of the claimed technical solution, and even less means to determine the protection scope of the claimed technical solution.
[0005] In view of the existing problems, the present application provides a cleaning device of a chemical mechanical polishing equipment, which comprises:
[0006] The moisturizing stand is internally provided with a pipeline;
[0007] A plurality of nozzles are arranged on the moisturizing stand from bottom to top, the plurality of nozzles are in communication with the pipeline, and the plurality of nozzles at least include a first nozzle, a second nozzle, a third nozzle and a fourth nozzle;
[0008] The first nozzle is used for cleaning the wafer supporting component area of the chemical mechanical polishing equipment;
[0009] The second nozzle is used for cleaning the polishing head area of the chemical mechanical polishing equipment;
[0010] A third nozzle for cleaning the area of the flange connection of the spindle of the CMP device;
[0011] A fourth nozzle for cleaning the area of the cover plate of the general process automation assembly of the CMP device.
[0012] In one embodiment of the present application, the first and second nozzles are fan-shaped nozzles, and the third and fourth nozzles are columnar nozzles.
[0013] In one embodiment of the present application, the first, second, third and fourth nozzles are located on a first side of the moisturizing column, and the cleaning device further comprises a fifth and a sixth nozzle located on a second side of the moisturizing column, the first and second sides being two adjacent sides of the moisturizing column, and the fifth and sixth nozzles being used for cleaning the area of the cover plate of the general process automation assembly of the CMP device.
[0014] In one embodiment of the present application, the fifth and sixth nozzles are columnar nozzles.
[0015] In one embodiment of the present application, the third, fourth and fifth nozzles are obliquely arranged on the moisturizing column.
[0016] In one embodiment of the present application, at least the first and second nozzles are adjustable in the direction angle of water spraying.
[0017] In one embodiment of the present application, all the nozzles are adjustable in the direction angle of water spraying.
[0018] In one embodiment of the present application, the cleaning device further comprises a water inlet assembly connected to the moisturizing column, wherein the water inlet assembly comprises a water inlet pipe and a water flow meter, the water inlet pipe is connected to a pipeline, and the water flow meter is connected to the moisturizing column through the water inlet pipe.
[0019] In one embodiment of the present application, the water inlet pipe is a pipe with a diameter of 3 / 8 inch.
[0020] In one embodiment of the present application, the water flow meter comprises a float flow meter.
[0021] In one embodiment of the present application, the cleaning device comprises at least two moisturizing columns and at least two water inlet assemblies, each water inlet assembly being connected to one moisturizing column, and the two water inlet assemblies being connected to the same pneumatic valve.
[0022] The cleaning device of the chemical mechanical polishing equipment in the embodiment of the present application expands the moisturizing range of the moisturizing column and improves the moisturizing cleaning ability of the moisturizing column by arranging different nozzles in the moisturizing column for cleaning the polishing head area, wafer supporting part area, general process automation component cover plate area and main shaft and flange connection area of the chemical mechanical polishing equipment, thereby reducing the risk of crystallization of the polishing liquid in the equipment during the polishing process and ensuring the polishing effect. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] The following drawings of the present application are used as part of the present application for understanding the present application. The drawings show embodiments of the present application and their descriptions, which are used to explain the principle of the present application.
[0024] In the attached figure:
[0025] Fig. 1 A schematic front view of a cleaning device for chemical mechanical polishing equipment according to a specific embodiment of the present application is shown;
[0026] Fig. 2 A side structural schematic diagram of a cleaning device for chemical mechanical polishing equipment according to a specific embodiment of the present application is shown;
[0027] Fig. 3 A schematic diagram of the connection between a water inlet assembly and a moisturizing column in a cleaning device of a chemical mechanical polishing equipment according to a specific embodiment of the present application is shown.
[0028] In the attached figure:
[0029] 10 moisturizing columns;
[0030] 11 first nozzle;
[0031] 12 second nozzle;
[0032] 13 third nozzle;
[0033] 14 fourth nozzle;
[0034] 15 fifth nozzle;
[0035] 16 sixth nozzle;
[0036] 20 water inlet assembly;
[0037] 21 water inlet pipe;
[0038] 22 water flow meter;
[0039] 30 pneumatic valves. DETAILED DESCRIPTION
[0040] The application will be described in greater detail with reference to the drawings, in which embodiments of the application are shown. The application may, however, be embodied in different forms without changing the essential characteristics thereof. Rather, the embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the application to those skilled in the art. In the drawings, the sizes and relative sizes of layers and regions can be exaggerated for clarity. Like reference numerals can represent like elements throughout.
[0041] It will be understood that when an element or layer is referred to as being "on" or "adjacent" or "connected" or "coupled" to another element or layer, it can be directly on, adjacent, connected or coupled to the other element or layer or one or more intervening elements or layers can be present. In contrast, when an element is referred to as being "directly on," "directly adjacent," "directly connected" or "directly coupled" to another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application.
[0042] Spatially relative terms, such as "beneath", "below", "lower", "under", "above", "upper" and the like, can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and / or operation in addition to the orientations depicted in the figures. For example, if a device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the exemplary term "below" can encompass both an orientation of above and below. The device can be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
[0043] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of associated items.
[0044] Embodiments of the application are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the application. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, embodiments of the application should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and / or a gradient of implant concentration at its edges rather than a binary change between implanted and non-implanted regions. Similarly, a buried region formed by implantation can result in some implant in a region between the buried region and a surface through which the implant was conducted. Thus, the regions illustrated in the figures are schematic and their shapes are not intended to illustrate the precise shape of a region of a device and are not intended to limit the scope of the application.
[0045] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and / or the
[0046] For a thorough understanding of the application, a detailed description will be made in the following description of embodiments with reference to the accompanying drawings. The preferred embodiments of the application will be described in detail below with reference made to the drawings to explain the technical solutions proposed by the application. In addition to the detailed description, the application can have other embodiments.
[0047] Chemical mechanical polishing (CMP) is a processing technology for removing excess material on the surface of a wafer to achieve global planarization. The CMP technology combines the dual effects of chemical etching and mechanical polishing, which can ensure material removal efficiency while obtaining a relatively perfect surface, and the flatness obtained is higher than that obtained by using chemical polishing or mechanical polishing alone.
[0048] However, in the process of polishing the wafer by using the CMP, there is a problem of crystallization of the polishing liquid. For example, in the process of polishing the wafer by using the polishing head, the polishing liquid will adhere to the outer wall of the polishing head. If not cleaned in time, crystallization will be formed. In the related technology, the CMP equipment is cleaned by using the moisturizing column to prevent crystallization from falling into the wafer carrier table in the polishing process, causing wafer defects and causing the latch, thereby affecting the performance of the device. However, when the moisturizing column is used for moisturizing cleaning in the related technology, the moisturizing cleaning capacity is still insufficient, resulting in crystallization in some areas of the CMP equipment during the polishing process. For example, the cleaning capacity of the moisturizing column for the polishing head area is insufficient, and the polishing liquid on the outer wall of the polishing head is not cleaned completely in time, resulting in crystallization on the outer wall of the polishing head. The main shaft and the flange connection part area are not moisturized, that is, the area is not cleaned. If the polishing liquid falls into this area, crystallization will also be formed. The universal process automation (UPA) assembly cover plate covers some areas outside the moisturizing range of the moisturizing column, and polishing liquid residues are likely to exist in these areas, thereby also causing crystallization. The crystallization generated on the CMP equipment will fall into the wafer carrier table during the polishing process, thereby affecting the polishing effect and the performance of the device.
[0049] Therefore, in view of the foregoing technical problems, the present application provides a cleaning device for a chemical mechanical polishing equipment. The cleaning device comprises a moisturizing column, and a pipeline is arranged in the moisturizing column. A plurality of nozzles are arranged on the moisturizing column from bottom to top, and the plurality of nozzles are in communication with the pipeline. The plurality of nozzles at least comprise a first nozzle, a second nozzle, a third nozzle and a fourth nozzle. The first nozzle is used for cleaning a wafer carrying component area of the chemical mechanical polishing equipment. The second nozzle is used for cleaning a polishing head area of the chemical mechanical polishing equipment. The third nozzle is used for cleaning a main shaft and flange connection part area of the chemical mechanical polishing equipment. The fourth nozzle is used for cleaning a universal process automation assembly cover plate area of the chemical mechanical polishing equipment.
[0050] In the above scheme, by arranging different nozzles in the moisturizing column and using different nozzles to clean the polishing head area, the wafer carrying component area, the universal process automation assembly cover plate area and the main shaft and flange connection part area of the chemical mechanical polishing equipment respectively, the moisturizing range of the moisturizing column is expanded, the moisturizing cleaning capacity of the moisturizing column is improved, and the risk of crystallization of the polishing liquid in the equipment during the polishing process is reduced, so as to ensure the polishing effect.
[0051] In order to thoroughly understand the present application, detailed steps and structures will be proposed in the following description in order to explain the technical solutions proposed by the present application. The preferred embodiments of the present application are described in detail as follows. However, in addition to these detailed descriptions, the present application can also have other implementation manners.
[0052] Below, reference Figs. 1 to 3 The cleaning device of the chemical mechanical polishing equipment of the present application is described in detail.
[0053] like Fig. 1 As shown, the cleaning device of the chemical mechanical polishing equipment includes: a moisturizing column 10, a pipeline (not shown) is provided inside the moisturizing column 10; a plurality of nozzles are provided on the moisturizing column 10 from bottom to top, and the plurality of nozzles are connected to the pipeline, a cleaning liquid or a moisturizing liquid is introduced into the pipeline, and is connected to the nozzle through the pipeline inside the moisturizing column 10, and the nozzle sprays the cleaning liquid or the moisturizing liquid to a predetermined area to clean and moisturize the relevant area, and the plurality of nozzles include at least a first nozzle 11, a second nozzle 12, a third nozzle 13 and a fourth nozzle 14; wherein the first nozzle 11 is used for cleaning the wafer carrying component area of the chemical mechanical polishing equipment; the second nozzle 12 is used for cleaning the polishing head area of the chemical mechanical polishing equipment; the third nozzle 13 is used for cleaning the main shaft and flange connection part area of the chemical mechanical polishing equipment; the fourth nozzle 14 is used for cleaning the general process automation component cover plate area of the chemical mechanical polishing equipment.
[0054] In this embodiment, water flows through the internal pipes of the moisturizing column 10. This water is sprayed toward the CMP equipment through the first nozzle 11, the second nozzle 12, the third nozzle 13, and the fourth nozzle 14 to achieve moisturizing and cleaning of corresponding areas of the CMP equipment. The water from the first nozzle 11 is sprayed toward the wafer support area to clean it; the water from the second nozzle 12 is sprayed toward the polishing head area to clean it; the water from the third nozzle 13 is sprayed toward the area where the spindle and flange connect to the CMP equipment to moisturize and clean it; and the water from the fourth nozzle 14 is sprayed toward the UPA assembly cover plate area to moisturize and clean it. During the polishing process, corresponding nozzles are installed in areas of the CMP equipment where polishing liquid residue is likely to form. These nozzles continuously spray water toward these areas of the CMP equipment, improving moisturizing and cleaning capabilities. This allows for the timely and effective removal of residual polishing liquid from these areas of the CMP equipment, thereby reducing the risk of crystallization in these areas of the CMP equipment, ensuring polishing results, and guaranteeing device performance.
[0055] In some embodiments, the middle of the moisturizing column is a hollow pipe, and the moisturizing cleaning water is connected to the hollow pipe and then sprayed to the corresponding area of the CMP equipment through the nozzle.
[0056] In some embodiments, the first nozzle and the second nozzle are fan-shaped nozzles, and the third nozzle and the fourth nozzle are columnar nozzles. In the related art, the nozzles on the moisturizing columns all use columnar nozzles, which spray columnar water flow. The columnar water flow has a smaller and more concentrated spraying range. However, the polishing head and wafer support component in the CMP equipment have a certain thickness. When using columnar nozzles for spraying water, due to the smaller and more concentrated spraying range of the columnar water flow, some areas of the outer wall of the polishing head and wafer support component may not be within the spraying range. Therefore, the present application uses fan-shaped nozzles to expand the range of water flow spraying, thereby improving the moisturizing and cleaning range of the polishing head and wafer support component.
[0057] In some embodiments, at least the first nozzle and the second nozzle are nozzles with adjustable water spray direction angles. It is worth mentioning that the adjustable water spray direction angle means that the nozzle can adjust the water spray direction angle according to the area to be cleaned, aiming at the area. Specifically, for example, the first nozzle is used to clean the wafer supporting component area of the chemical mechanical polishing equipment. Then, according to the relative position of the first nozzle and the wafer supporting component area, the water spray direction angle is adjusted upward or downward to make the water coverage area of the wafer supporting component area as large as possible. The water spray direction angle adjustment principle of the remaining nozzles is similar and will not be repeated here. Since the cleaning areas corresponding to the first nozzle and the second nozzle are areas where the polishing liquid is likely to remain and the area is large, the use of a fixed direction for water spraying may result in insufficient water flow range coverage. Therefore, the first nozzle and the second nozzle are set as nozzles with adjustable water spray direction angles. By adjusting the angles of the water spray directions of the first nozzle and the second nozzle, the range of water flow coverage is changed, thereby improving the moisturizing and cleaning capabilities of the first nozzle and the second nozzle on the polishing head and the wafer supporting component.
[0058] In some embodiments, as Fig. 2 As shown, the first nozzle 11, the second nozzle 12, the third nozzle 13, and the fourth nozzle are located on the first surface of the moisturizing column 10. The cleaning device also includes a fifth nozzle 15 and a sixth nozzle 16 located on the second surface of the moisturizing column 10. The fifth nozzle 15 and the sixth nozzle 16 are also used to clean the general process automation component cover plate area of the chemical mechanical polishing equipment.
[0059] The UPA assembly cover plate area in the CMP device is large, and the moisturizing range cannot completely cover the UPA assembly cover plate area only by the fourth nozzle 14. Therefore, the fifth nozzle 15 and the sixth nozzle 16 are added to expand the moisturizing range of the UPA assembly cover plate area. The fourth nozzle 14, the fifth nozzle 15 and the sixth nozzle 16 are arranged at different positions, so that the moisturizing range formed by the simultaneous water spraying of the fourth nozzle 14, the fifth nozzle 15 and the sixth nozzle 16 can cover the entire area of the UPA assembly cover plate, thereby achieving the moisturizing and cleaning of the UPA assembly cover plate area. In some embodiments, the third nozzle 13, the fourth nozzle 14 and the fifth nozzle 15 are arranged obliquely on the moisturizing column 10, so that they can spray water obliquely upward at a certain angle, thereby more accurately cleaning the corresponding area.
[0060] In some embodiments, the first face and the second face are two adjacent side faces of the moisturizing column, so that the water flow sprayed by the fourth nozzle arranged on the first face and the fifth nozzle and the sixth nozzle arranged on the second face can all be sprayed into the UPA assembly cover plate area, and meanwhile, the UPA assembly cover plate area moisturizing and cleaning group formed by the fourth nozzle, the fifth nozzle and the sixth nozzle can form a larger moisturizing coverage range.
[0061] In some embodiments, according to the position of the UPA assembly cover plate area, in order to enable the UPA assembly cover plate area moisturizing and cleaning group formed by the fourth nozzle, the fifth nozzle and the sixth nozzle to more effectively clean the area, the fourth nozzle and the sixth nozzle are arranged obliquely upward on the moisturizing column, so that the included angle between the fourth nozzle and the sixth nozzle and the moisturizing column is at a certain angle, thereby ensuring that the moisturizing range of the fourth nozzle, the fifth nozzle and the sixth nozzle can more effectively cover the UPA assembly cover plate. It is worth mentioning that the relative positions of the first nozzle, the second nozzle, the third nozzle, the fourth nozzle, the fifth nozzle and the sixth nozzle can be arranged as needed, and the specific arrangement of the relative positions of the nozzles that can ensure the water moisturizing range of the nozzles to cover the corresponding area is within the protection scope of the present application.
[0062] In some embodiments, the fifth nozzle and the sixth nozzle are columnar nozzles. Since the fourth nozzle, the fifth nozzle and the sixth nozzle are arranged at different positions according to the UPA assembly cover plate area, the moisturizing range is expanded, and the use of columnar nozzles for concentrated moisturizing and cleaning of the area is more conducive to cleaning the area.
[0063] In some embodiments, all the nozzles are water spraying direction angle adjustable nozzles. That is, in addition to the first nozzle and the second nozzle being water spraying direction angle adjustable nozzles, the third nozzle, the fourth nozzle, the fifth nozzle and the sixth nozzle are also water spraying direction angle adjustable nozzles, so that the cleaning of each area of the CMP device can be achieved by adjusting the water spraying direction angle of the nozzles to change the water flow coverage range.
[0064] In some embodiments, all the nozzles are high-pressure water flow nozzles. The high-pressure water flow nozzles convert the pressure energy of high-pressure water into kinetic energy by narrowing the cross section of the nozzle hole, and finally spray out from the nozzle in the form of high-pressure water jet. Such high-pressure water jet has sharp high impact force, which can ensure good spraying effect, thereby facilitating to improve the moisturizing cleaning effect on the CMP equipment.
[0065] In some embodiments, as shown in Fig. 3 the cleaning device of the chemical mechanical polishing equipment further comprises a water inlet assembly 20 connected with the moisturizing column 10, wherein the water inlet assembly 20 comprises a water inlet pipe 21 and a water flow meter 22, the water inlet pipe 21 communicates with the pipeline inside the moisturizing column, and the water flow meter 22 is connected with the moisturizing column through the water inlet pipe. The water inlet amount of the moisturizing column is displayed through the water flow meter 21, and the water inlet assembly 20 is further connected with a pneumatic valve 30, and the water inlet amount of the moisturizing column 10 is controlled through the cooperation of the pneumatic valve 30 and the water flow meter 21.
[0066] In some embodiments, the water flow meter comprises a float flow meter, which comprises a tapered circular pipe, a moving float and a flow indicator, wherein the position of the float can clearly display the flow size, and the measurement accuracy of the float flow meter is generally high, especially for the glass tube float flow meter, the scale of which can directly correspond to the flow size, so that the measurement accuracy is more accurate.
[0067] In some embodiments, as shown in Fig. 3 the cleaning device of the chemical mechanical polishing equipment comprises at least two moisturizing columns 10 and at least two water inlet assemblies 20, each water inlet assembly 20 is connected with one moisturizing column 10, and the two water inlet assemblies 20 are connected to the same pneumatic valve 30. The two moisturizing columns 10 are arranged on the two sides of the CMP equipment, so as to improve the moisturizing cleaning effect. A plurality of moisturizing columns 10 and a plurality of water inlet assemblies 20 can also be arranged around the CMP, so as to strengthen the moisturizing cleaning effect on the CMP equipment.
[0068] In the pipeline of the related art, the opening and closing of the moisturizing columns on both sides and the adjustment of the water amount are simultaneously controlled through the pneumatic valve, so that the water amount cannot be accurately obtained. As shown in Fig. 3 the water flow meter 22 is added behind the pneumatic valve 30 and in front of each moisturizing column 10, the water amount of the moisturizing column 10 is displayed through the water flow meter 22, and then the water amount of the moisturizing column 10 is adjusted through the cooperation of the water flow meter 22 and the pneumatic valve 30.
[0069] In some embodiments, the water inlet pipe of the present application is a pipe with a diameter of 3 / 8 inch, commonly referred to as a 3 / 8 pipe. In the related art, the water inlet pipe is a pipe with a diameter of 1 / 4 inch, commonly referred to as a 1 / 4 pipe. The embodiments of the present application replace the 1 / 4 pipe with a 3 / 8 pipe. Since the diameter of the 3 / 8 pipe is larger than that of the 1 / 4 pipe, the 3 / 8 pipe has a larger flow area, so that the flow rate of the water inlet pipe can be larger. An increase in the flow rate of the water inlet pipe increases the amount of water entering the moisturizing column, and the spray head also obtains a larger flow rate, thereby enhancing the moisturizing and cleaning effect of the spray head.
[0070] In summary, the cleaning device of the chemical mechanical polishing equipment according to the present application expands the moisturizing range of the moisturizing column and improves the moisturizing and cleaning capacity of the moisturizing column by providing different spray nozzles in the moisturizing column for cleaning the polishing head area, the wafer carrier component area, the general process automation assembly cover plate area, and the spindle and flange connection part area. In order to more accurately control the amount of water entering the moisturizing column, a water flow meter is added to the water inlet assembly. The water flow into the moisturizing column is controlled by the cooperation of the pneumatic valve and the water flow meter. In addition, a 3 / 8 pipe is used as the water inlet pipe in the water inlet assembly, so that the flow rate of the water inlet pipe is larger. An increase in the flow rate of the water inlet pipe increases the amount of water entering the moisturizing column, and the spray head also obtains a larger flow rate, thereby further improving the moisturizing and cleaning capacity of the moisturizing column, reducing the risk of crystallization of the polishing liquid in the equipment during the polishing process, and ensuring the polishing effect.
[0071] Although a number of embodiments have been described herein, it is to be understood that the scope of the inventive concept disclosed herein is not limited by any of the embodiments and may only be determined with reference to the claims. More particularly, changes can be made in the shape, size, material, and / or arrangement of the elements without departing from the scope of the application. For example, the elements can generally have different shapes or formed using both materials and / or manufacturing processes without departing from the scope of the application. Accordingly, the application is not to be restricted, except as by the appended claims.
Claims
1. A cleaning device for chemical mechanical polishing equipment, characterized in that: The cleaning device comprises: A moisturizing column, which is internally provided with a pipeline; A plurality of nozzles are arranged on the moisturizing column from bottom to top, and the plurality of nozzles are in communication with the pipeline, and at least include a first nozzle, a second nozzle, a third nozzle and a fourth nozzle; The first nozzle is used for cleaning a wafer bearing part area of the chemical mechanical polishing equipment; The second nozzle is used for cleaning a polishing head area of the chemical mechanical polishing equipment; The third nozzle is used for cleaning a main shaft and flange connecting part area of the chemical mechanical polishing equipment; The fourth nozzle is used for cleaning a general process automation assembly cover plate area of the chemical mechanical polishing equipment.
2. The cleaning apparatus of claim 1, wherein The first nozzle and the second nozzle are fan-shaped nozzles, and the third nozzle and the fourth nozzle are columnar nozzles.
3. The cleaning apparatus of claim 1, wherein The first nozzle, the second nozzle, the third nozzle and the fourth nozzle are located on a first face of the moisturizing column, and the cleaning device further comprises a fifth nozzle and a sixth nozzle located on a second face of the moisturizing column, the first face and the second face being two adjacent side faces of the moisturizing column; the fifth nozzle and the sixth nozzle are used for cleaning the general process automation assembly cover plate area of the chemical mechanical polishing equipment.
4. The cleaning apparatus of claim 3, wherein The fifth nozzle and the sixth nozzle are columnar nozzles.
5. The cleaning apparatus of claim 3, wherein The third nozzle, the fourth nozzle and the fifth nozzle are obliquely arranged on the moisturizing column.
6. The cleaning apparatus of claim 1, wherein At least the first nozzle and the second nozzle are nozzles with adjustable water spraying direction angle.
7. The cleaning apparatus of claim 1, wherein All the nozzles are nozzles with adjustable water spraying direction angle.
8. The cleaning apparatus of any one of claims 1 to 7, wherein, The cleaning device further comprises a water inlet assembly connected with the moisturizing column, wherein the water inlet assembly comprises a water inlet pipe and a water flow meter, the water inlet pipe is in communication with the pipeline, and the water flow meter is connected with the moisturizing column through the water inlet pipe.
9. The cleaning apparatus of claim 8, wherein The water inlet pipe is a pipeline with a diameter of 3 / 8 inch.
10. The cleaning apparatus of claim 8, wherein The cleaning device comprises at least two moisturizing columns and at least two water inlet assemblies, each water inlet assembly is connected with one moisturizing column, and the two water inlet assemblies are connected to the same pneumatic valve.